KR880701456A - 반도체 소자 - Google Patents

반도체 소자

Info

Publication number: KR880701456A
Authority: KR; South Korea
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1986-04-10

Application number

KR1019870701116A

Other languages

English (en)

Other versions

KR910005734B1 (ko

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-04-10

Filing date

1987-11-28

Publication date

1988-07-27

1987-03-19 Application filed filed Critical

1988-07-27 Publication of KR880701456A publication Critical patent/KR880701456A/ko

1991-08-02 Application granted granted Critical

1991-08-02 Publication of KR910005734B1 publication Critical patent/KR910005734B1/ko

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Recrystallisation Techniques (AREA)

KR1019870701116A 1986-04-10 1987-03-19 반도체 소자 KR910005734B1 (ko)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US85048386A	1986-04-10	1986-04-10
US850483		1986-04-10
PCT/US1987/000612 WO1987006392A1 (en)	1986-04-10	1987-03-19	Semiconductor device including an epitaxial layer on a lattice-mismatched single crystal substrate

Publications (2)

Publication Number	Publication Date
KR880701456A true KR880701456A (ko)	1988-07-27
KR910005734B1 KR910005734B1 (ko)	1991-08-02

Family

ID=25308247

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019870701116A KR910005734B1 (ko)	1986-04-10	1987-03-19	반도체 소자

Country Status (7)

Country	Link
EP (1)	EP0263866B1 (ko)
JP (1)	JP2854302B2 (ko)
KR (1)	KR910005734B1 (ko)
CA (1)	CA1272527A (ko)
DE (1)	DE3779547T2 (ko)
ES (1)	ES2004276A6 (ko)
WO (1)	WO1987006392A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6428808A (en) *	1987-07-23	1989-01-31	Matsushita Electric Ind Co Ltd	Method for growing epitaxial thin film crystal
US5079616A (en) *	1988-02-11	1992-01-07	Gte Laboratories Incorporated	Semiconductor structure
GB8905511D0 (en) *	1989-03-10	1989-04-19	British Telecomm	Preparing substrates
JP4569026B2 (ja) *	2001-03-30	2010-10-27	信越半導体株式会社	半導体基板及びその製造方法
JP7532366B2 (ja) *	2018-12-04	2024-08-13	エスアールアイインターナショナル	バンプボンディングを不要にするためのコンプライアント層の使用

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2757470A1 (de) *	1977-12-22	1979-07-05	Siemens Ag	Verfahren zum herstellen einer halbleiteranordnung

1987
- 1987-03-19 JP JP62502183A patent/JP2854302B2/ja not_active Expired - Lifetime
- 1987-03-19 WO PCT/US1987/000612 patent/WO1987006392A1/en active IP Right Grant
- 1987-03-19 EP EP87902923A patent/EP0263866B1/en not_active Expired - Lifetime
- 1987-03-19 KR KR1019870701116A patent/KR910005734B1/ko not_active IP Right Cessation
- 1987-03-19 DE DE8787902923T patent/DE3779547T2/de not_active Expired - Fee Related
- 1987-03-30 ES ES8700901A patent/ES2004276A6/es not_active Expired
- 1987-04-09 CA CA000534486A patent/CA1272527A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP2854302B2 (ja)	1999-02-03
KR910005734B1 (ko)	1991-08-02
ES2004276A6 (es)	1988-12-16
DE3779547T2 (de)	1993-01-28
DE3779547D1 (de)	1992-07-09
JPS63503104A (ja)	1988-11-10
CA1272527A (en)	1990-08-07
EP0263866B1 (en)	1992-06-03
WO1987006392A1 (en)	1987-10-22
EP0263866A1 (en)	1988-04-20

Legal Events

Date	Code	Title	Description
1988-02-13	A201	Request for examination
1991-06-29	G160	Decision to publish patent application
1992-02-24	E701	Decision to grant or registration of patent right
1992-05-08	GRNT	Written decision to grant
2001-07-30	FPAY	Annual fee payment	Payment date: 20010731 Year of fee payment: 11
2002-08-03	LAPS	Lapse due to unpaid annual fee

Publication	Publication Date	Title
KR900011017A (ko)	1990-07-11	반도체장치
DE68926256D1 (de)	1996-05-23	Komplementäre Halbleiteranordnung
KR900007100A (ko)	1990-05-09	반도체장치
KR850006779A (ko)	1985-10-16	반도체 장치
KR860007755A (ko)	1986-10-17	반도체 장치
DE3773957D1 (de)	1991-11-28	Halbleitervorrichtung.
KR900008703A (ko)	1990-06-03	반도체 장치
KR900001037A (ko)	1990-01-30	반도체 장치
KR860004470A (ko)	1986-06-23	반도체 장치
DK297187A (da)	1987-12-11	Regnbuedannende anordning
KR880701017A (ko)	1988-04-13	반도체 장치
DE68928760D1 (de)	1998-09-03	Halbleitervorrichtung
KR900702572A (ko)	1990-12-07	반도체 장치
KR890015422A (ko)	1989-10-30	반도체 장치
KR890004438A (ko)	1989-04-22	반도체 장치
KR890005864A (ko)	1989-05-17	반도체 장치
KR900008615A (ko)	1990-06-03	반도체장치
KR890015471A (ko)	1989-10-30	반도체 장치
DK360387A (da)	1988-01-11	Bestraalingsanordning
BR8703368A (pt)	1988-03-15	Dispositivo vibro-estimulador
KR880701456A (ko)	1988-07-27	반도체 소자
KR900011013A (ko)	1990-07-11	반도체장치
DE69025825D1 (de)	1996-04-18	Halbleiteranordnung
DE69027586D1 (de)	1996-08-01	Halbleiteranordnung
KR900000905A (ko)	1990-01-31	반도체장치