KR880701456A - 반도체 소자 - Google Patents
반도체 소자Info
- Publication number
- KR880701456A KR880701456A KR1019870701116A KR870701116A KR880701456A KR 880701456 A KR880701456 A KR 880701456A KR 1019870701116 A KR1019870701116 A KR 1019870701116A KR 870701116 A KR870701116 A KR 870701116A KR 880701456 A KR880701456 A KR 880701456A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85048386A | 1986-04-10 | 1986-04-10 | |
US850483 | 1986-04-10 | ||
PCT/US1987/000612 WO1987006392A1 (en) | 1986-04-10 | 1987-03-19 | Semiconductor device including an epitaxial layer on a lattice-mismatched single crystal substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880701456A true KR880701456A (ko) | 1988-07-27 |
KR910005734B1 KR910005734B1 (ko) | 1991-08-02 |
Family
ID=25308247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870701116A KR910005734B1 (ko) | 1986-04-10 | 1987-03-19 | 반도체 소자 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0263866B1 (ko) |
JP (1) | JP2854302B2 (ko) |
KR (1) | KR910005734B1 (ko) |
CA (1) | CA1272527A (ko) |
DE (1) | DE3779547T2 (ko) |
ES (1) | ES2004276A6 (ko) |
WO (1) | WO1987006392A1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6428808A (en) * | 1987-07-23 | 1989-01-31 | Matsushita Electric Ind Co Ltd | Method for growing epitaxial thin film crystal |
US5079616A (en) * | 1988-02-11 | 1992-01-07 | Gte Laboratories Incorporated | Semiconductor structure |
GB8905511D0 (en) * | 1989-03-10 | 1989-04-19 | British Telecomm | Preparing substrates |
JP4569026B2 (ja) * | 2001-03-30 | 2010-10-27 | 信越半導体株式会社 | 半導体基板及びその製造方法 |
JP7532366B2 (ja) * | 2018-12-04 | 2024-08-13 | エスアールアイ インターナショナル | バンプボンディングを不要にするためのコンプライアント層の使用 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2757470A1 (de) * | 1977-12-22 | 1979-07-05 | Siemens Ag | Verfahren zum herstellen einer halbleiteranordnung |
-
1987
- 1987-03-19 JP JP62502183A patent/JP2854302B2/ja not_active Expired - Lifetime
- 1987-03-19 WO PCT/US1987/000612 patent/WO1987006392A1/en active IP Right Grant
- 1987-03-19 EP EP87902923A patent/EP0263866B1/en not_active Expired - Lifetime
- 1987-03-19 KR KR1019870701116A patent/KR910005734B1/ko not_active IP Right Cessation
- 1987-03-19 DE DE8787902923T patent/DE3779547T2/de not_active Expired - Fee Related
- 1987-03-30 ES ES8700901A patent/ES2004276A6/es not_active Expired
- 1987-04-09 CA CA000534486A patent/CA1272527A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2854302B2 (ja) | 1999-02-03 |
KR910005734B1 (ko) | 1991-08-02 |
ES2004276A6 (es) | 1988-12-16 |
DE3779547T2 (de) | 1993-01-28 |
DE3779547D1 (de) | 1992-07-09 |
JPS63503104A (ja) | 1988-11-10 |
CA1272527A (en) | 1990-08-07 |
EP0263866B1 (en) | 1992-06-03 |
WO1987006392A1 (en) | 1987-10-22 |
EP0263866A1 (en) | 1988-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20010731 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |