KR880002049A - 안정화 콜린 염기 용액 - Google Patents

안정화 콜린 염기 용액 Download PDF

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KR880002049A
KR880002049A KR1019870007711A KR870007711A KR880002049A KR 880002049 A KR880002049 A KR 880002049A KR 1019870007711 A KR1019870007711 A KR 1019870007711A KR 870007711 A KR870007711 A KR 870007711A KR 880002049 A KR880002049 A KR 880002049A
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solution
weight
concentration
formaldehyde
suitably
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KR1019870007711A
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KR950007339B1 (ko
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제이·타셋 칼
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허비히 폰 모르쯔
신텍스(미합중국) 인코포레이티
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)

Abstract

내용 없음

Description

안정화 콜린 염기 용액
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (22)

  1. 콜린 염기와, 물, 저급 알칸올 및 그의 혼합물로 되는 군 중에서 선택되는 용매와, 포름알데히드원으로 이루어진, 안정화시키기 위한 농도의 안정화제로 되는 안정화 콜린 염기 용액.
  2. 제 1항에 있어서, 상기 포름알데히드원이 포름알데히드, 파라포름알데히드 및 그의 혼합물로 되는 군중에서 선택되는 용액.
  3. 제 2항에 있어서, 상기 포름알데히드원이 적합하기로는 포름알데히드, 특히 적합하기로는 파라포름알데히드인 용액.
  4. 제 1항 또는 제 3항에 있어서, 콜린 염기의 농도가 용액의 약 0.01% 내지 60중량%, 임의로 약 1% 내지 60%중량%인 용액.
  5. 제 4항에 있어서, 콜린 염기의 농도가 용액의 적어도 약10중량%인 용액.
  6. 제 1 항, 제 2 항 또는 제 3 항에 있어서, 용매가 물인 용액.
  7. 제 6항에 있어서, 콜린 염기의 농도가 약 10% 내지 40중량%인 용액.
  8. 제 1 항, 제 2 항 또는 제 3 항에 있어서, 용매가 저급알칸올, 적합하기로는 메틴올인 용액.
  9. 제 8항에 있어서, 콜린 염기의 농도가 약 10% 내지 50%중량%인 용액.
  10. 제 1 항, 제 2 항 또는 제 3 항에 있어서, 용매가 물과 저급알칸올, 적합하기로는 물과 메탄올의 혼합물인 용액.
  11. 제10항에 있어서, 콜린 염기의 농도가 약 10% 내지 약 45중량%인 용액.
  12. 제 1 항, 제 2 항 또는 제 3 항에 있어서, 안정화제가 주로 포름알데히드로 이루어지는 용액.
  13. 제12항에 있어서, 안정화제의 농도가 용액의 약 0.002% 내지 12중량%, 적합하기로는 약 0.005% 내지 6%, 특히 적합하기로는 약 0.1%내지 1중량%인 용액.
  14. 제 1 항, 제 2 항 또는 제 3 항에 있어서, 안정하제가 주로 파라포름알데히드로 이루어지는 용액.
  15. 제14항에 있어서, 안정화제의 농도가 용액의 약 0.002% 내지 12중량%, 적합하기로는 약 0.005% 내지 6중량%, 특히 적합하기로는 약 0.1%내지 1중량%인 용액.
  16. 제 1항 또는 제3항에 있어서, 실질적으로 금속이온이 함유되지 않은 용액.
  17. 표면 처리 유효량의 콜린 염기와, 물, 저급 알칸올 및 그의 혼합물로 되는 군 중에서 선택되는 용매와, 포름알데히드로 이루어진, 안정화시키기 위한 농도의 안정화제로 되는 용액으로 기질 표면을 처리하는 방법.
  18. 제17항에 있어서, 상기 포름알데히드원이 포름알데히드, 파라포름알데히드 및 그의 혼합물로 되는 군중에서 선택되는 방법.
  19. 제18항에 있어서, 상기 포름알데히드원이 적합하기로는 포름알데히드, 특히 적합하기로는 파라포름알데히드인 방법.
  20. 제17항, 제18항 또는 제19항에 있어서, 상기 처리가 양성으로 작용하는 내광제를 그 위에 함유하는 기질을 내광필름의 적어도 일부분이 기질로부터 제거되기에 충분한 온도 및 시간으로 상기 용액과 접촉시킴으로써 내광 필름을 기질로부터 제거하는 것으로 되는 방법.
  21. 제17항, 제18항 또는 제19항에 있어서, 상기 처리가 그 위에 금속층을 갖는 반도체 장치의 제조에서 얻은 중간 생성물의 표면을 금속층 중 적어도 일부분이 부식되기에 충분한 온도 및 시간으로 상기 용액과 접촉시킴으로써 반도체 장치의 제조에서 얻은 중간 생성물의 표면 중금속층을 부식시키는 것으로 되는 방법.
  22. 제17항, 제18항 또는 제19항에 있어서, 상기 처리가 기질 표면을 기질 표면이 세정되기에 충분한 온도 및 시간으로 상기 용액과 접촉시킴으로써 기질 표면을 세정하는 것으로 되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007711A 1986-07-18 1987-07-16 안정화 콜린 염기 용액 KR950007339B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/887,674 US4686002A (en) 1986-07-18 1986-07-18 Stabilized choline base solutions
US887.674 1986-07-18
US887674 1986-07-18

Publications (2)

Publication Number Publication Date
KR880002049A true KR880002049A (ko) 1988-04-28
KR950007339B1 KR950007339B1 (ko) 1995-07-10

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US (1) US4686002A (ko)
EP (1) EP0253675B1 (ko)
JP (1) JP2572069B2 (ko)
KR (1) KR950007339B1 (ko)
AT (1) ATE73126T1 (ko)
CA (1) CA1306660C (ko)
DE (1) DE3776995D1 (ko)
ES (1) ES2030430T3 (ko)
GR (1) GR3003964T3 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683192A (en) * 1996-04-15 1997-11-04 Kilfoil; Dennis C. Toothbrush system with an internal water delivery system operable from a shower

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638629A1 (de) * 1986-11-11 1988-05-26 Schering Ag Mittel und verfahren zur entfernung von fotoresisten
DE3740369A1 (de) * 1987-11-25 1989-06-08 Schering Ag Verfahren zur vorbehandlung von kunststoffen
US4931103A (en) * 1988-08-11 1990-06-05 E. I. Du Pont De Nemours And Company Tricholine phosphate surface treating agent
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
JP2653511B2 (ja) * 1989-03-30 1997-09-17 株式会社東芝 半導体装置の洗浄方法及びその洗浄装置
JPH05506049A (ja) * 1990-04-12 1993-09-02 マリンクロッド・スペシャルティ・ケミカルズ・カンパニー 医療用装置の精密洗浄法
US5110367A (en) * 1990-04-12 1992-05-05 Mallinckrodt Specialty Chemicals Company Method for precision cleaning of medical devices
JP2906590B2 (ja) * 1990-06-14 1999-06-21 三菱瓦斯化学株式会社 アルミニウム配線半導体基板の表面処理剤
US5139607A (en) * 1991-04-23 1992-08-18 Act, Inc. Alkaline stripping compositions
EP0539881B1 (en) * 1991-10-29 1995-08-02 E.I. Du Pont De Nemours And Company Single-phase developers for lithographic printing elements
US5554320A (en) * 1993-11-22 1996-09-10 Yianakopoulos; Georges Liquid cleaning compositions
JPH10289891A (ja) * 1997-04-11 1998-10-27 Mitsubishi Gas Chem Co Inc 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法
US6348239B1 (en) 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US20030073242A1 (en) * 2001-10-11 2003-04-17 Kitchens Keith G. Apparatus for controlling stripping solutions methods thereof
US7378006B2 (en) * 2002-07-26 2008-05-27 Instrumentation Laboratory Company Aqueous solutions for reducing the rate of oxygen loss, and methods thereof
US20040074519A1 (en) * 2002-10-17 2004-04-22 Moore John C. Metal safe stabilized stripper for removing cured polymeric layers and negative tone acrylic photoresists
MX2007000298A (es) * 2004-07-09 2007-04-02 Akzo Nobel Nv Composicion que comprende hidroxido de colina y procedimiento para prepararla.
BR112014012143A2 (pt) * 2011-11-22 2017-05-30 Taminco N V soluções de colina estabilizadas e métodos para preparação das mesmas
US9527799B2 (en) 2013-04-11 2016-12-27 Taminco Process for choline hydroxide
US9297081B2 (en) * 2014-02-21 2016-03-29 Ecolab Usa Inc. Use of neutralizing agent in olefin or styrene production
JP6296974B2 (ja) * 2014-12-25 2018-03-20 四日市合成株式会社 安定化四級アンモニウム水酸化物水溶液及びその製造方法
US11492277B2 (en) 2015-07-29 2022-11-08 Ecolab Usa Inc. Heavy amine neutralizing agents for olefin or styrene production

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB700115A (en) * 1951-03-16 1953-11-25 Evan Jones Improvements in disinfectants and deodorizers
US2823166A (en) * 1954-11-17 1958-02-11 Walter H Hoffman Choline ascorbate, methods for producing same, and compositions thereof
US3897485A (en) * 1966-10-18 1975-07-29 J Berthier Lab Choline compounds
US3549370A (en) * 1966-11-23 1970-12-22 Hunt Chem Corp Philip A Quaternary ammonium bisulfites,sulfites or pyrosulfites as developer preservatives
NL7007023A (ko) * 1969-05-16 1970-11-18
US3947491A (en) * 1972-03-24 1976-03-30 The Purdue Frederick Company Stabilized choline salicylate compounds
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
JPS5351970A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
IT1141651B (it) * 1980-06-24 1986-10-08 Giuseppe Riva Procedimento per la stabilizzazione di vitamine
US4425202A (en) * 1982-08-18 1984-01-10 Thiokol Corporation Method of making and color stabilization of choline base
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
US4464461A (en) * 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683192A (en) * 1996-04-15 1997-11-04 Kilfoil; Dennis C. Toothbrush system with an internal water delivery system operable from a shower

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Publication number Publication date
KR950007339B1 (ko) 1995-07-10
EP0253675A1 (en) 1988-01-20
DE3776995D1 (de) 1992-04-09
US4686002A (en) 1987-08-11
EP0253675B1 (en) 1992-03-04
JPS6354344A (ja) 1988-03-08
ATE73126T1 (de) 1992-03-15
GR3003964T3 (ko) 1993-03-16
JP2572069B2 (ja) 1997-01-16
ES2030430T3 (es) 1992-11-01
CA1306660C (en) 1992-08-25

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