KR870002659A - 쇼트키층 전극 영역을 갖는 산화금속 반도체 전계효과 트랜지스터 - Google Patents

쇼트키층 전극 영역을 갖는 산화금속 반도체 전계효과 트랜지스터 Download PDF

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KR870002659A
KR870002659A KR1019850006056A KR850006056A KR870002659A KR 870002659 A KR870002659 A KR 870002659A KR 1019850006056 A KR1019850006056 A KR 1019850006056A KR 850006056 A KR850006056 A KR 850006056A KR 870002659 A KR870002659 A KR 870002659A
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layer
metal
gate electrode
oxide semiconductor
metal oxide
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KR1019850006056A
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폴 렙슬터 마틴
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마이클 와이. 엡스타인
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR870002659A publication Critical patent/KR870002659A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

쇼트키층 전극 영역을 갖는 산화금속 반도체 전계효과 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 P채널 MOSFET구성의 각종 제조단계를 도시한 부분적 횡단면도로서, 그중 제5도 내지 제8도는 제1도 내지 제4도 및 제9도 내지 제10도에 도시한 구성의 좌측 부분에 대한 확대도.
제11도는 본 발명의 제2실시예에 따른 P채널 MOSFET구성의 제조단계를 도시한 부분적 횡단면도.
제12도는 본 발명의 제3실시예에 따른 n채널 MOSFET구성의 부분적 횡단면도.
* 도면의 주요부분에 대한 부호의 설명
9 : 반도체 기판 10 : n형 에피텍시얼 표면층
13 : 게이트 전극층 14 : 실리콘 이산화층
15~17 : 백금 규화물층 31 : 백금 음극시료
32~34 : 백금 침전층 80 : P형 에피텍시얼 표면층
86 : 소오스 전극 87 : 드레인 전극

Claims (9)

  1. 반도체 본체(10)상에 형성된 쇼트키층 소오스 전극(16)과, 게이트 절연층(12)에 의해 본체로부터 분리된 게이트 전극층(13)과, 게이트 전극의 측벽을 코팅한 측벽 절연층(14)을 갖는 산화금속 반도체 트랜지스터 구성에 있어서, 상기 측벽 절연체의 하부를 잘라내어, 소정의 관계로 상기 게이트 전극층의 연부를 종결시키도록 형성한 상기 본체내의 공동내로 상기 트랜지스터의 소오스 전극(16)을 연재시켜서 채우는 것을 특징으로 하는 산화금속 반도체 트랜지스터.
  2. 제1항에 있어서, 반도체 본체는 실리콘이고, 게이트 절연층은 실리콘 이산화물이며, 게이트 전극층은 폴리 실리콘이고, 또한 소오스 전극층은 금속 규화물인 것을 특징으로 하는 산화금속 반도체 트랜지스터.
  3. 제2항에 있어서, 측벽 절연층은 실리콘 이산화물인 것을 특징으로 하는 산화금속 반도체 트랜지스터.
  4. 제1항에 있어서, 소오스 전극은 게이트 전극층의 상부연부와 대체로 정렬하는 위치까지 측벽 절연층 하부로 연재하는 것을 특징으로 하는 산화금속 반도체 트랜지스터.
  5. 각각 산화층으로 코팅된 한쌍의 측벽을 갖는 폴리 실리콘 게이트 전극을 형성하는 공정과, 상기 게이트 전극을 실리콘 이산화층에 의해 모노 실리콘 반도체 본체의 주표면으로부터 분리시키는 공정을 포함하는 산화금속 반도체 트랜지스터 제조방법에 있어서, 측벽 산화층의 노출된 연부와 인접하는 주표면의 노출된 부분에서 실리콘 본체를 엣칭하고, 상기 측벽 산화층중 한층의 하부를 잘라내어, 상기 실리콘 본체내에 공동을 형성하는 공정과, 상기 주표면을 금속으로 충돌시켜, 상기 실리콘 본체의 주표면의 노출된 부분상에 금속 규화물층을 형성하고, 상기 공동을 상기 금속 규화물층으로 채우는 공정을 포함하는 것을 특징으로 하는 산화금속 반도체 트랜지스터 제조방법.
  6. 제5항에 있어서, 상기 충돌 공정중에, 어떠한 금속이나 금속 규화물도 산화층상에 축적하지 않고, 실리콘 본체의 노출된 부분에만 금속 규화물을 형성시켜 축적하는 것을 특징으로 하는 산화금속 반도체 트랜지스터 제조방법.
  7. 제6항에 있어서, 폴리 실리콘 게이트 전극의 상부 주표면을 금속 충돌중에 노출시켜서, 금속 규화물을 금속 충돌중에 게이트 전극의 주표면상에도 형성시켜 축적하는 것을 특징으로 하는 산화금속 반도체 트랜지스터 제조방법.
  8. 제7항에 있어서, 상기 금속은 백금인 것을 특징으로 하는 산화금속 반도체 트랜지스터 제조방법.
  9. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850006056A 1984-08-24 1985-08-22 쇼트키층 전극 영역을 갖는 산화금속 반도체 전계효과 트랜지스터 KR870002659A (ko)

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US64395684A 1984-08-24 1984-08-24
US643956 1984-08-24

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EP (1) EP0191841A1 (ko)
JP (1) JPS62500061A (ko)
KR (1) KR870002659A (ko)
ES (1) ES8704037A1 (ko)
WO (1) WO1986001641A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5663584A (en) * 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
JP2002184716A (ja) * 2000-12-11 2002-06-28 Sharp Corp 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
FR2480371A1 (fr) * 1980-04-15 1981-10-16 Ferodo Sa Commande hydraulique assistee, notamment pour embrayages et freins
US4485550A (en) * 1982-07-23 1984-12-04 At&T Bell Laboratories Fabrication of schottky-barrier MOS FETs

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JPS62500061A (ja) 1987-01-08
WO1986001641A1 (en) 1986-03-13
EP0191841A1 (en) 1986-08-27
ES546353A0 (es) 1987-03-01
ES8704037A1 (es) 1987-03-01

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