KR870000744A - 박막단결정(薄膜單結晶)의 제조장치 - Google Patents

박막단결정(薄膜單結晶)의 제조장치 Download PDF

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Publication number
KR870000744A
KR870000744A KR1019860004670A KR860004670A KR870000744A KR 870000744 A KR870000744 A KR 870000744A KR 1019860004670 A KR1019860004670 A KR 1019860004670A KR 860004670 A KR860004670 A KR 860004670A KR 870000744 A KR870000744 A KR 870000744A
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KR
South Korea
Prior art keywords
thin film
single crystal
film single
semiconductor layer
manufacturing thin
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KR1019860004670A
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English (en)
Inventor
야스오 가노오
시게루 고지마
세쓰오 우스이
Original Assignee
오오가 노리오
쏘니 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 오오가 노리오, 쏘니 가부시기 가이샤 filed Critical 오오가 노리오
Publication of KR870000744A publication Critical patent/KR870000744A/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

내용 없음.

Description

박막단결정(薄膜單結晶)의 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 박막단결정 제조장치의 일실시예를 나타낸 구성도.
제2도(a)는 각기 시료상의 비임형성의 예를 나타낸 도면.
제3도는 비임을 복수비임으로 하는 수단의 일례를 나타낸 구성도.
* 도면의 주요부분에 대한 부호의 설명
1 : 시료 2 : 에너지비임(레이저광)
21 : 에너지비임(멜트비임) 3 : 촬상수단

Claims (1)

  1. 반도체층에 에너지비임을 조사하여 이 반도체층을 용융한 다음 재결정화시키는 박막단결정의 제조장치에 있어서, 상기 반도체층에 상기 에너지비임을 조사하는 수단과, 상기 반도체층에서 방사되는 방사광을 촬상수단으로 검출하는 수단을 구비하여 이루어진 박막단결정의 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004670A 1985-06-18 1986-06-12 박막단결정(薄膜單結晶)의 제조장치 KR870000744A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60130764A JPS61289617A (ja) 1985-06-18 1985-06-18 薄膜単結晶の製造装置
JP85-130764 1985-06-18

Publications (1)

Publication Number Publication Date
KR870000744A true KR870000744A (ko) 1987-02-20

Family

ID=15042097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004670A KR870000744A (ko) 1985-06-18 1986-06-12 박막단결정(薄膜單結晶)의 제조장치

Country Status (5)

Country Link
JP (1) JPS61289617A (ko)
KR (1) KR870000744A (ko)
DE (1) DE3620300A1 (ko)
FR (1) FR2583572B1 (ko)
GB (1) GB2177256B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
WO1989004387A1 (en) * 1987-11-13 1989-05-18 Kopin Corporation Improved zone melt recrystallization method and apparatus
US5074952A (en) * 1987-11-13 1991-12-24 Kopin Corporation Zone-melt recrystallization method and apparatus
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
DE3818504A1 (de) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
DE3921038C2 (de) * 1988-06-28 1998-12-10 Ricoh Kk Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5338388A (en) * 1992-05-04 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method of forming single-crystal semiconductor films
US8183498B2 (en) * 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US8927898B2 (en) 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
DE112008000934B4 (de) * 2007-04-24 2022-10-27 LIMO GmbH Verfahren zur Umstrukturierung von Halbleiterschichten

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
US4380864A (en) * 1981-07-27 1983-04-26 The United States Of America As Represented By The Secretary Of The Air Force Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process

Also Published As

Publication number Publication date
FR2583572A1 (fr) 1986-12-19
GB2177256A (en) 1987-01-14
FR2583572B1 (fr) 1990-05-11
GB8614683D0 (en) 1986-07-23
JPS61289617A (ja) 1986-12-19
DE3620300A1 (de) 1986-12-18
GB2177256B (en) 1988-12-21

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