KR870000744A - 박막단결정(薄膜單結晶)의 제조장치 - Google Patents
박막단결정(薄膜單結晶)의 제조장치 Download PDFInfo
- Publication number
- KR870000744A KR870000744A KR1019860004670A KR860004670A KR870000744A KR 870000744 A KR870000744 A KR 870000744A KR 1019860004670 A KR1019860004670 A KR 1019860004670A KR 860004670 A KR860004670 A KR 860004670A KR 870000744 A KR870000744 A KR 870000744A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- single crystal
- film single
- semiconductor layer
- manufacturing thin
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 박막단결정 제조장치의 일실시예를 나타낸 구성도.
제2도(a)는 각기 시료상의 비임형성의 예를 나타낸 도면.
제3도는 비임을 복수비임으로 하는 수단의 일례를 나타낸 구성도.
* 도면의 주요부분에 대한 부호의 설명
1 : 시료 2 : 에너지비임(레이저광)
21 : 에너지비임(멜트비임) 3 : 촬상수단
Claims (1)
- 반도체층에 에너지비임을 조사하여 이 반도체층을 용융한 다음 재결정화시키는 박막단결정의 제조장치에 있어서, 상기 반도체층에 상기 에너지비임을 조사하는 수단과, 상기 반도체층에서 방사되는 방사광을 촬상수단으로 검출하는 수단을 구비하여 이루어진 박막단결정의 제조장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60130764A JPS61289617A (ja) | 1985-06-18 | 1985-06-18 | 薄膜単結晶の製造装置 |
JP85-130764 | 1985-06-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR870000744A true KR870000744A (ko) | 1987-02-20 |
Family
ID=15042097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860004670A KR870000744A (ko) | 1985-06-18 | 1986-06-12 | 박막단결정(薄膜單結晶)의 제조장치 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS61289617A (ko) |
KR (1) | KR870000744A (ko) |
DE (1) | DE3620300A1 (ko) |
FR (1) | FR2583572B1 (ko) |
GB (1) | GB2177256B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2211210A (en) * | 1987-10-16 | 1989-06-28 | Philips Electronic Associated | A method of modifying a surface of a body using electromagnetic radiation |
WO1989004387A1 (en) * | 1987-11-13 | 1989-05-18 | Kopin Corporation | Improved zone melt recrystallization method and apparatus |
US5074952A (en) * | 1987-11-13 | 1991-12-24 | Kopin Corporation | Zone-melt recrystallization method and apparatus |
JPH01246829A (ja) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | ビームアニール装置 |
DE3818504A1 (de) * | 1988-05-31 | 1991-01-03 | Fraunhofer Ges Forschung | Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial |
DE3921038C2 (de) * | 1988-06-28 | 1998-12-10 | Ricoh Kk | Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
US5338388A (en) * | 1992-05-04 | 1994-08-16 | Mitsubishi Denki Kabushiki Kaisha | Method of forming single-crystal semiconductor films |
US8183498B2 (en) * | 2006-05-01 | 2012-05-22 | Tcz, Llc | Systems and method for optimization of laser beam spatial intensity profile |
US8927898B2 (en) | 2006-05-01 | 2015-01-06 | Tcz, Llc | Systems and method for optimization of laser beam spatial intensity profile |
DE112008000934B4 (de) * | 2007-04-24 | 2022-10-27 | LIMO GmbH | Verfahren zur Umstrukturierung von Halbleiterschichten |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4155779A (en) * | 1978-08-21 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Control techniques for annealing semiconductors |
US4380864A (en) * | 1981-07-27 | 1983-04-26 | The United States Of America As Represented By The Secretary Of The Air Force | Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process |
-
1985
- 1985-06-18 JP JP60130764A patent/JPS61289617A/ja active Pending
-
1986
- 1986-06-12 KR KR1019860004670A patent/KR870000744A/ko not_active Application Discontinuation
- 1986-06-17 FR FR868608724A patent/FR2583572B1/fr not_active Expired - Lifetime
- 1986-06-17 GB GB08614683A patent/GB2177256B/en not_active Expired
- 1986-06-18 DE DE19863620300 patent/DE3620300A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2583572A1 (fr) | 1986-12-19 |
GB2177256A (en) | 1987-01-14 |
FR2583572B1 (fr) | 1990-05-11 |
GB8614683D0 (en) | 1986-07-23 |
JPS61289617A (ja) | 1986-12-19 |
DE3620300A1 (de) | 1986-12-18 |
GB2177256B (en) | 1988-12-21 |
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Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |