GB8614683D0 - Manufacturing crystalline thin films - Google Patents

Manufacturing crystalline thin films

Info

Publication number
GB8614683D0
GB8614683D0 GB868614683A GB8614683A GB8614683D0 GB 8614683 D0 GB8614683 D0 GB 8614683D0 GB 868614683 A GB868614683 A GB 868614683A GB 8614683 A GB8614683 A GB 8614683A GB 8614683 D0 GB8614683 D0 GB 8614683D0
Authority
GB
United Kingdom
Prior art keywords
thin films
crystalline thin
manufacturing crystalline
manufacturing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB868614683A
Other versions
GB2177256B (en
GB2177256A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8614683D0 publication Critical patent/GB8614683D0/en
Publication of GB2177256A publication Critical patent/GB2177256A/en
Application granted granted Critical
Publication of GB2177256B publication Critical patent/GB2177256B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
GB08614683A 1985-06-18 1986-06-17 Methods of and apparatus for manufacturing crystalline thin films Expired GB2177256B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60130764A JPS61289617A (en) 1985-06-18 1985-06-18 Manufacturing device for single-crystal thin film

Publications (3)

Publication Number Publication Date
GB8614683D0 true GB8614683D0 (en) 1986-07-23
GB2177256A GB2177256A (en) 1987-01-14
GB2177256B GB2177256B (en) 1988-12-21

Family

ID=15042097

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08614683A Expired GB2177256B (en) 1985-06-18 1986-06-17 Methods of and apparatus for manufacturing crystalline thin films

Country Status (5)

Country Link
JP (1) JPS61289617A (en)
KR (1) KR870000744A (en)
DE (1) DE3620300A1 (en)
FR (1) FR2583572B1 (en)
GB (1) GB2177256B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
US5074952A (en) * 1987-11-13 1991-12-24 Kopin Corporation Zone-melt recrystallization method and apparatus
WO1989004387A1 (en) * 1987-11-13 1989-05-18 Kopin Corporation Improved zone melt recrystallization method and apparatus
JPH01246829A (en) * 1988-03-28 1989-10-02 Tokyo Electron Ltd Beam annealing device
DE3818504A1 (en) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung METHOD AND DEVICE FOR THE CRYSTALIZATION OF THIN SEMICONDUCTOR LAYERS ON A SUBSTRATE MATERIAL
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
DE3921038C2 (en) * 1988-06-28 1998-12-10 Ricoh Kk Method for producing a semiconductor substrate or solid structure
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5338388A (en) * 1992-05-04 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method of forming single-crystal semiconductor films
US8183498B2 (en) 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US8927898B2 (en) 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
CN101680107B (en) * 2007-04-24 2013-04-10 Limo专利管理有限及两合公司 Method for restructuring semiconductor layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
US4380864A (en) * 1981-07-27 1983-04-26 The United States Of America As Represented By The Secretary Of The Air Force Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process

Also Published As

Publication number Publication date
KR870000744A (en) 1987-02-20
FR2583572A1 (en) 1986-12-19
FR2583572B1 (en) 1990-05-11
GB2177256B (en) 1988-12-21
DE3620300A1 (en) 1986-12-18
JPS61289617A (en) 1986-12-19
GB2177256A (en) 1987-01-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950617