KR850000801A - 광전지장치 및 그 제조방법 - Google Patents

광전지장치 및 그 제조방법 Download PDF

Info

Publication number
KR850000801A
KR850000801A KR1019840002914A KR840002914A KR850000801A KR 850000801 A KR850000801 A KR 850000801A KR 1019840002914 A KR1019840002914 A KR 1019840002914A KR 840002914 A KR840002914 A KR 840002914A KR 850000801 A KR850000801 A KR 850000801A
Authority
KR
South Korea
Prior art keywords
electrode
semiconductor body
photovoltaic device
barrier layer
current flowing
Prior art date
Application number
KR1019840002914A
Other languages
English (en)
Inventor
프렘나스
Original Assignee
로렌스지. 노리스
에너지 컨버젼 디바이스 이코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/518,184 external-priority patent/US4598306A/en
Priority claimed from US06/564,862 external-priority patent/US4532372A/en
Application filed by 로렌스지. 노리스, 에너지 컨버젼 디바이스 이코포레이티드 filed Critical 로렌스지. 노리스
Publication of KR850000801A publication Critical patent/KR850000801A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음.

Description

광전지장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 다수의 p-i-n형 전지로 구성되고, 전지의 각층이 반도체 합금으로 형성된 “비장벽”탠덥 광전지 장치의 부분단면도. 제2A도는 본 발명의 장벽층이 합체된 반도체장치의 제1실시예를 도시한 단면도. 제2B도는 굵은 선으로 표시된 장벽층의 제1예상배치와 가상선으로 표시된 장벽층의 제2예상배치를 도시한 개량반도체 장치의 분해 부분품 배열사시도. 제3A도는 내부에 몇개의 결함구역이 형성되어 있는 종래식 반도체 장치의 단면도. 제3B도는 제3A도의 저저항결함 구역을 통하는 전류의 분로를 제거할 수 있도록 장벽층을 반도체 몸 체위에 배치되어 있는 본 발명의 장벽층을 표시하는 반도체 장치의 단면도.

Claims (9)

  1. 제1전극, 입사광 에너지에 반응하여 전류를 흐르게 하는 제1전극 위의 능동 반도체 몸체, 반도체 몸체 위에 있는 제2전극, 전극 사이를 흐르는 전류에 대하여 저저항분로를 제공할 수 있는 적어도 하나 이상의 결함구역등으로 구성된반도체장치에 있어서, 그 결함구역을 통하여 흐르는 전류를 감소시키기 위하여 반도체몸체와 한전극 사이에 배치된 역속투명장벽층이 포함되어 있는 것을 특징으로 하하 광전지 장치.
  2. 제1항에 있어서, 장벽층이 인듐, 주석, 카드뮴, 아연, 안티몬, 실리콘, 크롬 및 그 혼합물, 질화물 및 탄화물에 근거한 루플오트 마그네슘으로 구성된 원자단으로부터 선택한 재료로 성형되어 있는 것을 특징으로 하는 광전지 장치.
  3. 제1항에 있어서, 장벽층이 반도체 몸체와 제2전극 사이에 배치되어 있는 것을 특징으로 하는 광전지 장치.
  4. 제3항에 있어서, 반도체 몸체가 비결정성 p-i-n층으로 구성되고, 제1전극이 두걷운 고전도성 금속으로 형성되어 있는 것을 특징으로 하는 광전지 장치.
  5. 제1항에 있어서, 장벽층이 103-108옴-cm의 고유저항을 가진 투명 실리콘 재료로 형성되어 있는 것을 특징으로 하는 광전지 장치.
  6. 기판전극, 기판전극 위에 있는 활성 반도체 몸체, 반도체 몸체 위에 있는 투명한 도전성 전극, 전극 사이를 흐르는 전류에 대하여 저저항 분로를 제공할 수 있는 적어도 하나 이상의 결함구역등으로 구성되고, 상기 반도체 몸체가 그 위에 입사되는 광선에 반응하여 전류를 발생시키게 되어있는 광전지 장치에 있어서, 연속 투명장벽층이 광전지 장치의 적어도 하나 이상의 결함구역을 통하여 흐르는 전류를 감소시키기 위하여 반도체 몸체와 투명전극 사이에 배치되어 있는 것을 특징으로 하는 광전지 장치.
  7. 제6항에 있어서, 장벽층의 인듐, 주석, 카드뮴, 아연, 안티몬, 실리콘 및 그 혼합물들의 산화물, 질화물 및 탄화물에 근거한 플루오로 마스네슘으로 구성된 원자단으로부터 선태할 재료로 형성되어 있는 것 특징으로 하는 광전지 장치.
  8. 제1전극, 입사광선에 반응하여 전류를 흐르게 하는 제1전극 위의 반도체 몸체, 반도체 몸체 위에 있는 제2전극, 전극 사이로 흐르는 전류에 대하여 저저항 분로를 제공할 수 있는 적어도 하나 이상의 결함 구역등으로 구성된 개량반도체 장치를 만드는 방법에 있어서, 인듐, 주석, 카드뮴, 아연, 안티몬, 실리콘, 크롬 및 그 혼합물들의 산화물, 질화물 및 탄화물에 근거한 플루오로 마그네슘으로 구성된 원자단으로부터 재료를 선택하는 단계와 재료로 형성된 연속 투명장벽층을 상기 반도체 장치의 적어도 하나 이상의 결함구역을 통하여 흐르는 전류를 감소시키기 위하여 반도체 몸체와 한전극 사이에 배치하는 단계가 포함되어 있는 것을 특징으로 하는 광전지 장치 제조방법.
  9. 제1전극, 입사광선에 반응하여 전류를 흐르게 하는 제1전극 위의 활성 반도체 몸체, 반도체 몸체위에 있는 제2전극, 전극 사이를 흐르는 전류에 저저항 분로를 제공할 수 있는 적어도 하나 이상의 잠재결함구역 등으로 구성된 광전지 장치의 동작 모드장애를 방지하는 방법에 있어서, 인듐, 주석, 카드뮴, 아연, 안티몬, 실리콘, 크롬 및 그 혼합물의 산화물, 질화물 및 탄화물에 근거한 플루오로 마그네슘으로 구성된 원자단으로부터 재료로 형성된 연속 투명장벽층을 상기 광전지 장치의 적어도 하나 이상의 잠재결합구역을 통하여 흐르는 전류를 감소시키기 위하여 반도체 몸체와 한전극 사이에 배치하는 단계가 포함되어 있는 R서을 특징으로 하는 광전지 장치 제조 방법.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019840002914A 1983-05-28 1984-05-26 광전지장치 및 그 제조방법 KR850000801A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US518184 1983-05-28
US06/518,184 US4598306A (en) 1983-07-28 1983-07-28 Barrier layer for photovoltaic devices
US564862 1983-12-23
US06/564,862 US4532372A (en) 1983-12-23 1983-12-23 Barrier layer for photovoltaic devices

Publications (1)

Publication Number Publication Date
KR850000801A true KR850000801A (ko) 1985-03-09

Family

ID=27059374

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840002914A KR850000801A (ko) 1983-05-28 1984-05-26 광전지장치 및 그 제조방법

Country Status (8)

Country Link
EP (1) EP0132924A3 (ko)
JP (1) JPH065767B2 (ko)
KR (1) KR850000801A (ko)
AU (1) AU560950B2 (ko)
BR (1) BR8402521A (ko)
ES (1) ES8601565A1 (ko)
IN (1) IN165761B (ko)
MX (1) MX154938A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0190855A3 (en) * 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Improved photovoltaic device tolerant of low resistance defects
EP0236938A3 (de) * 1986-03-11 1989-11-15 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium
JP2784841B2 (ja) * 1990-08-09 1998-08-06 キヤノン株式会社 太陽電池用基板
US5181968A (en) * 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
AU650782B2 (en) * 1991-09-24 1994-06-30 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
AU662360B2 (en) * 1991-10-22 1995-08-31 Canon Kabushiki Kaisha Photovoltaic device
US6072117A (en) * 1996-02-27 2000-06-06 Canon Kabushiki Kaisha Photovoltaic device provided with an opaque substrate having a specific irregular surface structure
JP2984595B2 (ja) 1996-03-01 1999-11-29 キヤノン株式会社 光起電力素子
US5981934A (en) * 1996-09-12 1999-11-09 Canon Kabushiki Kaisha Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property
US6184456B1 (en) 1996-12-06 2001-02-06 Canon Kabushiki Kaisha Photovoltaic device
JP3327811B2 (ja) 1997-05-13 2002-09-24 キヤノン株式会社 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子及び半導体素子基板の製造方法
JPH1146006A (ja) 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6951689B1 (en) 1998-01-21 2005-10-04 Canon Kabushiki Kaisha Substrate with transparent conductive layer, and photovoltaic element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
JPS56160080A (en) * 1980-05-15 1981-12-09 Shunpei Yamazaki Photoelectric conversion unit
JPS5814582A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd 高効率のアモルフアスシリコン系太陽電池
JPS5878474A (ja) * 1981-11-05 1983-05-12 Seiko Epson Corp 薄膜太陽電池
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same

Also Published As

Publication number Publication date
JPS6084888A (ja) 1985-05-14
IN165761B (ko) 1990-01-06
AU560950B2 (en) 1987-04-30
BR8402521A (pt) 1985-04-02
ES532821A0 (es) 1985-10-16
ES8601565A1 (es) 1985-10-16
EP0132924A3 (en) 1986-06-18
AU2858684A (en) 1985-01-31
MX154938A (es) 1988-01-08
JPH065767B2 (ja) 1994-01-19
EP0132924A2 (en) 1985-02-13

Similar Documents

Publication Publication Date Title
KR850000801A (ko) 광전지장치 및 그 제조방법
CA1244120A (en) Current collection structure for photovoltaic devices
JP3239657B2 (ja) 薄膜太陽電池およびその製造方法
US5928439A (en) Thin-film solar cell and method for the manufacture thereof
KR940702649A (ko) 광전지(photovoltaic cell)
KR840008541A (ko) 협 밴드갭 광전지장치
EP0591433A1 (en) Photovoltaic device having an improved collector grid
JPS61222181A (ja) 電流コレクタグリツドの製造方法及びそのための材料
KR970004102A (ko) 집적화 박막 태양전지와 그 제조방법
US2766144A (en) Photocell
US4244750A (en) Photovoltaic generator
EP0307484A1 (en) Color sensor
KR870008225A (ko) 유기중합체필름내의 금속 구조의 부착을 위해 광감성 음극을 사용하는 금속층 부착방법
JPS57204178A (en) Optoelectric transducer
US4227940A (en) Solar cell for use in concentrator
JPS6085578A (ja) 薄膜光電変換素子の製造方法
JPS5899647A (ja) 太陽電池を備えた太陽熱集熱器
JPS59129478A (ja) 直列接続型薄膜太陽電池
JPH0237782A (ja) 多層膜半導体光センサー
JPS5449082A (en) Semiconductor device
JP2000114566A5 (ko)
JP2002076425A (ja) 光電変換装置
JP3469061B2 (ja) 太陽電池
JPS56130977A (en) Solar battery
JPH049389B2 (ko)

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid