KR840007313A - 매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路) - Google Patents

매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路) Download PDF

Info

Publication number
KR840007313A
KR840007313A KR1019830005883A KR830005883A KR840007313A KR 840007313 A KR840007313 A KR 840007313A KR 1019830005883 A KR1019830005883 A KR 1019830005883A KR 830005883 A KR830005883 A KR 830005883A KR 840007313 A KR840007313 A KR 840007313A
Authority
KR
South Korea
Prior art keywords
semiconductor
integrated circuit
substrate
semiconductor integrated
resistor
Prior art date
Application number
KR1019830005883A
Other languages
English (en)
Inventor
쇼우찌(외 4) 하나무라
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840007313A publication Critical patent/KR840007313A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

내용 없음

Description

매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 고저항(高抵抗)을 부하(負荷)로 하는 스테이틱(static)형 반도체 메모리 셀(memory cell)의 회로도.
제2도는 제1도의 회로의 집적회로 평면 패턴(pattern)의 1예.
제3도는 제2도의 A―A′ 단면도.

Claims (9)

  1. 제1도전형의 반도체 기판과, 그 기판위에 설치된 제2도전형의 반도체 영역과, 그 제2도전형의 반도체 영역의 표면 영역에서 부터 상기 반도체 기판에 대하여 깊이방향으로 형성된 구멍의 안에 절연물을 사이에 두고 설치된 반도체 층으로 된 저항체와를 갖고 있으며, 그 저항체의 하단이 상기 반도체 기판에 접속되어서 된 매입 저항을 가진 반도체 집적회로.
  2. 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 저항체의 상단과 하단에는 고농도 불순물층이 설치되여 있는 것.
  3. 특허청구 범위 제2항의 반도체 집적회로에 있어서, 상기 제2도전형의 반도체 영역에는, 제1도전형의 소오스, 드레인 영역을 가진 절연 게이트 형 트랜지스터가 형성되어 있고, 그 소오스 드레인 영역의 적어도 한쪽에, 상기 구멍이 만들어져서, 저항체가 형성되며, 상기 저향체의 상단과 접속되어 있는 것.
  4. 특허청구 범위 제3항의 반도체 집적 회로에 있어서, 상기 절연 게이트형 트랜지스터와 저항체와에 의하여, 플립 플롭 회로의 인버어터부가 형성되고, 상기 기판이 전원에 접속되여 있는 것.
  5. 특허청구 범위 제4항의 반도체 집적회로에 있어서, 상기 플립 플롭회로의 전하 축적 노오드에는 전송 트랜지스터가 접속되어 있고, 그 플립 플롭 회로와 함께, 스테이틱 · 랜덤 · 액세스 · 메모리 · 셀이 구성 되는 것.
  6. 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 제2도전형의 반도체 영역이, 상기 기판 표면에 설치된 웰 확산층으로 된 것.
  7. 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 제2도전형의 반도체 영역이, 상기 기판 위에 설치된 반도체 에피택셜 성장층으로 되는것.
  8. 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 저항체가 되는 반도체 층은, 진성 또는 저불순물 농도의 다결정 반도체인 것.
  9. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830005883A 1982-12-13 1983-12-12 매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路) KR840007313A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP216825 1982-12-13
JP57216825A JPS59107563A (ja) 1982-12-13 1982-12-13 スタテイツク型半導体メモリ装置

Publications (1)

Publication Number Publication Date
KR840007313A true KR840007313A (ko) 1984-12-06

Family

ID=16694478

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830005883A KR840007313A (ko) 1982-12-13 1983-12-12 매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路)

Country Status (3)

Country Link
EP (1) EP0111307A3 (ko)
JP (1) JPS59107563A (ko)
KR (1) KR840007313A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
EP0391123A3 (en) * 1989-04-04 1991-09-11 Texas Instruments Incorporated Extended length trench resistor and capacitor
DE102008060470A1 (de) 2008-12-05 2010-06-10 Henkel Ag & Co. Kgaa Reinigungsmittel
US8956938B2 (en) 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
CN111370474B (zh) * 2020-04-23 2023-10-24 上海华虹宏力半导体制造有限公司 沟槽栅器件的栅极串联电阻

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2148175A1 (de) * 1971-09-27 1973-04-05 Siemens Ag Integrierte halbleiterschaltung
DE2947311C2 (de) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrierte Halbleiterschaltung

Also Published As

Publication number Publication date
EP0111307A3 (en) 1985-11-06
EP0111307A2 (en) 1984-06-20
JPS59107563A (ja) 1984-06-21

Similar Documents

Publication Publication Date Title
KR840006872A (ko) 반도체 집적회로장치 및 그 제조방법
KR850002639A (ko) 반도체 기억장치
KR870006662A (ko) 홈 용량을 가진 다이나믹 랜덤 액세스 메모리
KR840006873A (ko) 반도체 메모리
KR890702254A (ko) 집적회로 트랜치 셀
KR830009653A (ko) 집적회로의 보호장치
KR940003038A (ko) 정적 랜덤 억세스 메모리 셀과 수직 전계 효과 트랜지스터
KR850004875A (ko) 반도체 메모리 장치
KR900017196A (ko) 동적 메모리 셀을 구비한 반도체 메모리 장치
KR870004496A (ko) 반도체 기억 장치
KR890016651A (ko) 반도체 집적회로 장치의 제조방법
KR850007718A (ko) 반도체 장치
KR970067928A (ko) 단락 애노우드 수평형 절연 게이트 바이폴라 트랜지스터
US3488564A (en) Planar epitaxial resistors
KR920018943A (ko) 반도체 기억장치
KR880005662A (ko) 집적 회로 제조공정
KR890011101A (ko) 래터럴 트랜지스터를 구비한 집적 회로
KR860009489A (ko) 반도체 집적회로장치 및 그 제조방법
KR840000081A (ko) 반도체 메모리
KR840007313A (ko) 매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路)
KR910008861A (ko) 집적회로소자
KR940016782A (ko) 반도체 장치
KR870008392A (ko) 직교식 쌍극성 트랜지스터
KR840008213A (ko) 반도체 장치
KR910020740A (ko) 반도체기억장치

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid