KR840007313A - 매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路) - Google Patents
매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路) Download PDFInfo
- Publication number
- KR840007313A KR840007313A KR1019830005883A KR830005883A KR840007313A KR 840007313 A KR840007313 A KR 840007313A KR 1019830005883 A KR1019830005883 A KR 1019830005883A KR 830005883 A KR830005883 A KR 830005883A KR 840007313 A KR840007313 A KR 840007313A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor
- integrated circuit
- substrate
- semiconductor integrated
- resistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 230000003068 static effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 2
- 238000009825 accumulation Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 고저항(高抵抗)을 부하(負荷)로 하는 스테이틱(static)형 반도체 메모리 셀(memory cell)의 회로도.
제2도는 제1도의 회로의 집적회로 평면 패턴(pattern)의 1예.
제3도는 제2도의 A―A′ 단면도.
Claims (9)
- 제1도전형의 반도체 기판과, 그 기판위에 설치된 제2도전형의 반도체 영역과, 그 제2도전형의 반도체 영역의 표면 영역에서 부터 상기 반도체 기판에 대하여 깊이방향으로 형성된 구멍의 안에 절연물을 사이에 두고 설치된 반도체 층으로 된 저항체와를 갖고 있으며, 그 저항체의 하단이 상기 반도체 기판에 접속되어서 된 매입 저항을 가진 반도체 집적회로.
- 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 저항체의 상단과 하단에는 고농도 불순물층이 설치되여 있는 것.
- 특허청구 범위 제2항의 반도체 집적회로에 있어서, 상기 제2도전형의 반도체 영역에는, 제1도전형의 소오스, 드레인 영역을 가진 절연 게이트 형 트랜지스터가 형성되어 있고, 그 소오스 드레인 영역의 적어도 한쪽에, 상기 구멍이 만들어져서, 저항체가 형성되며, 상기 저향체의 상단과 접속되어 있는 것.
- 특허청구 범위 제3항의 반도체 집적 회로에 있어서, 상기 절연 게이트형 트랜지스터와 저항체와에 의하여, 플립 플롭 회로의 인버어터부가 형성되고, 상기 기판이 전원에 접속되여 있는 것.
- 특허청구 범위 제4항의 반도체 집적회로에 있어서, 상기 플립 플롭회로의 전하 축적 노오드에는 전송 트랜지스터가 접속되어 있고, 그 플립 플롭 회로와 함께, 스테이틱 · 랜덤 · 액세스 · 메모리 · 셀이 구성 되는 것.
- 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 제2도전형의 반도체 영역이, 상기 기판 표면에 설치된 웰 확산층으로 된 것.
- 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 제2도전형의 반도체 영역이, 상기 기판 위에 설치된 반도체 에피택셜 성장층으로 되는것.
- 특허청구 범위 제1항의 반도체 집적회로에 있어서, 상기 저항체가 되는 반도체 층은, 진성 또는 저불순물 농도의 다결정 반도체인 것.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP216825 | 1982-12-13 | ||
JP57216825A JPS59107563A (ja) | 1982-12-13 | 1982-12-13 | スタテイツク型半導体メモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR840007313A true KR840007313A (ko) | 1984-12-06 |
Family
ID=16694478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019830005883A KR840007313A (ko) | 1982-12-13 | 1983-12-12 | 매입저항(埋入抵抗)을 가진 반도체 집적회로(半導體集積回路) |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0111307A3 (ko) |
JP (1) | JPS59107563A (ko) |
KR (1) | KR840007313A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4890144A (en) * | 1987-09-14 | 1989-12-26 | Motorola, Inc. | Integrated circuit trench cell |
EP0391123A3 (en) * | 1989-04-04 | 1991-09-11 | Texas Instruments Incorporated | Extended length trench resistor and capacitor |
DE102008060470A1 (de) | 2008-12-05 | 2010-06-10 | Henkel Ag & Co. Kgaa | Reinigungsmittel |
US8956938B2 (en) | 2012-05-16 | 2015-02-17 | International Business Machines Corporation | Epitaxial semiconductor resistor with semiconductor structures on same substrate |
CN111370474B (zh) * | 2020-04-23 | 2023-10-24 | 上海华虹宏力半导体制造有限公司 | 沟槽栅器件的栅极串联电阻 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2148175A1 (de) * | 1971-09-27 | 1973-04-05 | Siemens Ag | Integrierte halbleiterschaltung |
DE2947311C2 (de) * | 1978-11-24 | 1982-04-01 | Hitachi, Ltd., Tokyo | Integrierte Halbleiterschaltung |
-
1982
- 1982-12-13 JP JP57216825A patent/JPS59107563A/ja active Pending
-
1983
- 1983-12-07 EP EP83112313A patent/EP0111307A3/en not_active Withdrawn
- 1983-12-12 KR KR1019830005883A patent/KR840007313A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0111307A3 (en) | 1985-11-06 |
EP0111307A2 (en) | 1984-06-20 |
JPS59107563A (ja) | 1984-06-21 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |