KR20210144796A - 화상 생성 방법 - Google Patents

화상 생성 방법 Download PDF

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Publication number
KR20210144796A
KR20210144796A KR1020217034266A KR20217034266A KR20210144796A KR 20210144796 A KR20210144796 A KR 20210144796A KR 1020217034266 A KR1020217034266 A KR 1020217034266A KR 20217034266 A KR20217034266 A KR 20217034266A KR 20210144796 A KR20210144796 A KR 20210144796A
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KR
South Korea
Prior art keywords
pattern
specific point
image
specific
points
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KR1020217034266A
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English (en)
Korean (ko)
Inventor
고타로 마루야마
Original Assignee
타스밋 가부시키가이샤
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Publication of KR20210144796A publication Critical patent/KR20210144796A/ko

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/18—Investigating the presence of flaws defects or foreign matter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
    • G06T7/33—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30141—Printed circuit board [PCB]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Geometry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • Architecture (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020217034266A 2019-03-28 2020-03-06 화상 생성 방법 KR20210144796A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019062767A JP2020161769A (ja) 2019-03-28 2019-03-28 画像生成方法
JPJP-P-2019-062767 2019-03-28
PCT/JP2020/009695 WO2020195710A1 (ja) 2019-03-28 2020-03-06 画像生成方法

Publications (1)

Publication Number Publication Date
KR20210144796A true KR20210144796A (ko) 2021-11-30

Family

ID=72610103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217034266A KR20210144796A (ko) 2019-03-28 2020-03-06 화상 생성 방법

Country Status (6)

Country Link
US (1) US20220180041A1 (zh)
JP (1) JP2020161769A (zh)
KR (1) KR20210144796A (zh)
CN (1) CN113614874A (zh)
TW (1) TW202105552A (zh)
WO (1) WO2020195710A1 (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033365A (ja) 2000-07-14 2002-01-31 Seiko Instruments Inc ウエハパターン観察方法及び装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251377A (ja) * 1998-03-02 1999-09-17 Hitachi Ltd 欠陥検査方法およびその装置並びに欠陥の観察または分析方法およびそのシステム
KR101672157B1 (ko) * 2005-11-18 2016-11-02 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
JP2008041940A (ja) * 2006-08-07 2008-02-21 Hitachi High-Technologies Corp Ｓｅｍ式レビュー装置並びにｓｅｍ式レビュー装置を用いた欠陥のレビュー方法及び欠陥検査方法
US8355562B2 (en) * 2007-08-23 2013-01-15 Hitachi High-Technologies Corporation Pattern shape evaluation method
JP2011191296A (ja) * 2010-03-16 2011-09-29 Ngr Inc パターン検査装置および方法
TWI475597B (zh) * 2012-02-08 2015-03-01 Hitachi High Tech Corp Pattern evaluation method and pattern evaluation device
JP5948138B2 (ja) * 2012-05-11 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥解析支援装置、欠陥解析支援装置で実行されるプログラム、および欠陥解析システム
US8490030B1 (en) * 2012-06-01 2013-07-16 Synopsys, Inc. Distance metric for accurate lithographic hotspot classification using radial and angular functions
US8806392B2 (en) * 2012-12-03 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Distinguishable IC patterns with encoded information
US10163733B2 (en) * 2016-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method of extracting defects
US11016035B2 (en) * 2017-09-18 2021-05-25 Elite Semiconductor Inc. Smart defect calibration system and the method thereof
US11100272B2 (en) * 2018-08-17 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer-to-design image analysis (WDIA) system
JP7053417B2 (ja) * 2018-09-13 2022-04-12 キオクシア株式会社 欠陥検査装置および欠陥検査方法
US10706205B2 (en) * 2018-10-22 2020-07-07 International Business Machines Corporation Detecting hotspots in physical design layout patterns utilizing hotspot detection model with data augmentation
US11017147B2 (en) * 2019-08-30 2021-05-25 Siemens Industry Software Inc. Edge-based camera for characterizing semiconductor layout designs
JP2023163801A (ja) * 2022-04-28 2023-11-10 キヤノン株式会社 トナー
KR20230162862A (ko) * 2022-05-20 2023-11-29 삼성전자주식회사 반도체 계측 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033365A (ja) 2000-07-14 2002-01-31 Seiko Instruments Inc ウエハパターン観察方法及び装置

Also Published As

Publication number Publication date
JP2020161769A (ja) 2020-10-01
US20220180041A1 (en) 2022-06-09
TW202105552A (zh) 2021-02-01
CN113614874A (zh) 2021-11-05
WO2020195710A1 (ja) 2020-10-01

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