KR20170093104A - Transparent resin composition, adhesive comprising composition, die bond material comprising composition, conductive connection method using composition, and optical semiconductor device obtained using method - Google Patents
Transparent resin composition, adhesive comprising composition, die bond material comprising composition, conductive connection method using composition, and optical semiconductor device obtained using method Download PDFInfo
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- KR20170093104A KR20170093104A KR1020177009396A KR20177009396A KR20170093104A KR 20170093104 A KR20170093104 A KR 20170093104A KR 1020177009396 A KR1020177009396 A KR 1020177009396A KR 20177009396 A KR20177009396 A KR 20177009396A KR 20170093104 A KR20170093104 A KR 20170093104A
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- South Korea
- Prior art keywords
- component
- composition
- transparent resin
- resin composition
- optical semiconductor
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- 239000011342 resin composition Substances 0.000 title claims abstract description 65
- 239000000203 mixture Substances 0.000 title claims description 70
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 230000003287 optical effect Effects 0.000 title claims description 67
- 238000000034 method Methods 0.000 title claims description 48
- 239000000463 material Substances 0.000 title claims description 47
- 239000000853 adhesive Substances 0.000 title claims description 35
- 230000001070 adhesive effect Effects 0.000 title claims description 34
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 59
- 239000002245 particle Substances 0.000 claims abstract description 50
- 239000007787 solid Substances 0.000 claims abstract description 22
- 238000002834 transmittance Methods 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims abstract description 20
- 150000001451 organic peroxides Chemical class 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 26
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 13
- 125000000962 organic group Chemical group 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000001723 curing Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 238000002360 preparation method Methods 0.000 description 12
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- 239000006087 Silane Coupling Agent Substances 0.000 description 8
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- 238000005259 measurement Methods 0.000 description 7
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- 239000003566 sealing material Substances 0.000 description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 5
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- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
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- 239000003377 acid catalyst Substances 0.000 description 2
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- 125000003710 aryl alkyl group Chemical group 0.000 description 2
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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- 229910052736 halogen Inorganic materials 0.000 description 2
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- 150000007524 organic acids Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- 238000005979 thermal decomposition reaction Methods 0.000 description 2
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- WRXCBRHBHGNNQA-UHFFFAOYSA-N (2,4-dichlorobenzoyl) 2,4-dichlorobenzenecarboperoxoate Chemical compound ClC1=CC(Cl)=CC=C1C(=O)OOC(=O)C1=CC=C(Cl)C=C1Cl WRXCBRHBHGNNQA-UHFFFAOYSA-N 0.000 description 1
- TUGAMVVIFZLKTI-UHFFFAOYSA-N (3-methoxy-3-methylbutoxy)peroxycarbonyl (3-methoxy-3-methylbutyl)peroxy carbonate Chemical compound COC(C)(C)CCOOOC(=O)OC(=O)OOOCCC(C)(C)OC TUGAMVVIFZLKTI-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- NOBYOEQUFMGXBP-UHFFFAOYSA-N (4-tert-butylcyclohexyl) (4-tert-butylcyclohexyl)oxycarbonyloxy carbonate Chemical compound C1CC(C(C)(C)C)CCC1OC(=O)OOC(=O)OC1CCC(C(C)(C)C)CC1 NOBYOEQUFMGXBP-UHFFFAOYSA-N 0.000 description 1
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
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- TVWBTVJBDFTVOW-UHFFFAOYSA-N 2-methyl-1-(2-methylpropylperoxy)propane Chemical compound CC(C)COOCC(C)C TVWBTVJBDFTVOW-UHFFFAOYSA-N 0.000 description 1
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- 230000005494 condensation Effects 0.000 description 1
- 239000011370 conductive nanoparticle Substances 0.000 description 1
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- SPTHWAJJMLCAQF-UHFFFAOYSA-M ctk4f8481 Chemical compound [O-]O.CC(C)C1=CC=CC=C1C(C)C SPTHWAJJMLCAQF-UHFFFAOYSA-M 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
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- 238000007599 discharging Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- 239000003063 flame retardant Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
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- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
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- DOIRQSBPFJWKBE-UHFFFAOYSA-N phthalic acid di-n-butyl ester Natural products CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 1
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- 125000001424 substituent group Chemical group 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical group [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- 239000011593 sulfur Chemical group 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
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- KGKNBDYZZIBZQL-UHFFFAOYSA-N tert-butyl carboxyoxy carbonate Chemical compound CC(C)(C)OC(=O)OOC(O)=O KGKNBDYZZIBZQL-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- XTXFUQOLBKQKJU-UHFFFAOYSA-N tert-butylperoxy(trimethyl)silane Chemical compound CC(C)(C)OO[Si](C)(C)C XTXFUQOLBKQKJU-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
본 발명은, 투명수지 조성물로서, (A) (A-1) 하기 일반식(1)로 표시되는 구조를 분자 중에 적어도 1개 갖는 오르가노폴리실록산: 100질량부, (A-2) 유기과산화물: 상기 (A-1)성분의 합계량 100질량부에 대하여, 0.1~10질량부를 포함하는 실리콘 조성물과, (B)평균입경이 1μm 이하인 도전성 입자를 함유하는 것이며, 상기 (B)성분의 함유량이, 상기 (A)성분의 고형분을 기준으로 하여 0체적%보다 크고, 또한 0.1체적% 미만인 범위이며, 상기 투명수지 조성물을 경화하여 얻어지는 2mm 두께의 경화물의 전광선 투과율이 70% 이상이며, 또한 헤이즈값이 60% 이하인 투명수지 조성물이다. 이에 따라, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 내열성 및 내광성을 갖는 경화물을 부여하는 투명수지 조성물이 제공된다.
[화학식 1]
[Chemical Formula 1]
Description
본 발명은, 투명수지 조성물, 이 조성물로 이루어진 접착제, 이 조성물로 이루어진 다이본드재, 이 조성물을 이용한 도전접속방법, 및 이 방법에 의해 얻어진 광반도체 장치에 관한 것이다.
The present invention relates to a transparent resin composition, an adhesive made of the composition, a die bond material made of the composition, a conductive connection method using the composition, and an optical semiconductor device obtained by this method.
발광 다이오드(LED) 등의 광반도체 소자는 전력소비량이 적다는 우수한 특성을 가지므로, 옥외조명 용도나 자동차 용도의 광반도체 디바이스에 대한 적용이 증가하고 있다. 이러한 광반도체 디바이스는, 일반적으로 청색광, 근자외광 혹은 자외광을 발광하는 광반도체 발광소자로부터 발하는 광을, 파장변환재료인 형광체에 의해 파장변환하여 의사백색(疑似白色)이 얻어지도록 한 발광장치이다.
2. Description of the Related Art Optical semiconductor devices such as light emitting diodes (LEDs) have excellent characteristics of low power consumption, and thus application to optical semiconductor devices for outdoor lighting applications and automobiles is increasing. Such a light semiconductor device is a light emitting device that converts light emitted from a photosemiconductor light emitting element that emits blue light, near-ultraviolet light, or ultraviolet light to a wavelength converted by a wavelength converting material to obtain a pseudo white (pseudo white) .
최근, 광반도체 소자의 추가적인 발광효율의 향상을 목적으로 하여, 수직형 광반도체 소자의 개발이 이루어지고 있다. 수직형(Vertical) 광반도체 소자는 전극을 수직구조로 배치한 것이며, 간단히 수직형 LED칩이라고도 한다. 수직형 LED칩은, 발광층에 균일하게 전류가 흐름으로써, 전극을 수평배치한 구조인 동일 사이즈의 수평형(lateral) LED칩에 비해, 수십배의 전류를 흘리는 것이 가능하며, 발광층의 온도상승을 억제하고, 발광효율을 높일 수 있다. 나아가, 수평형 LED칩에 보인 국소적인 전류밀도의 증가가 억제되고, LED의 대전류화가 가능해지는 등, 우수한 특장을 가지므로, 그 실용이 진행되고 있다.
In recent years, vertical optical semiconductor devices have been developed for the purpose of further improving the light emitting efficiency of optical semiconductor devices. A vertical optical semiconductor device is a vertical arrangement of electrodes, and is also referred to as a vertical type LED chip. In the vertical type LED chip, a current flows uniformly in the light emitting layer, and it is possible to flow a current several tens of times larger than that of a lateral LED chip of the same size, which structure has electrodes arranged horizontally, And the luminous efficiency can be increased. Furthermore, since the LED chip has excellent features such as an increase in the local current density seen in the horizontal type LED chip is suppressed and a large current of the LED becomes possible, practical use thereof is progressing.
한편, 수직형 LED칩은, 상기 서술한 바와 같이 전극을 수직구조로 배치하고 있는 점에서 이해되는 바와 같이, 수직형 LED칩을 배선판에 탑재하는 경우, 일방의 전극은 종래와 마찬가지로 와이어본드 등의 방법을 이용하여 전기적으로 접속되고, 다른 일방의 전극은 공정땜납이나 도전성 접착제 등을 이용하여 전기적으로 접속할 필요가 있다.
On the other hand, in the vertical type LED chip, when the vertical type LED chip is mounted on the wiring board, as is understood from the point that the electrodes are arranged in a vertical structure as described above, And one of the other electrodes needs to be electrically connected using a process solder, a conductive adhesive, or the like.
종래, 수직형 LED칩을 배선판에 탑재하기 위한 접착제로서, 공정땜납이나 에폭시 수지 조성물에 도전성 입자를 배합한 도전성 접착제가 널리 이용되고 있다. 그러나, 공정땜납을 이용하는 방법으로는, 다이본드시에 필요한 땜납을 용융하기 위해 열에 의해, 광반도체의 발광층에 데미지를 주기 때문에 바람직하지 않다. 또한, 최근에는, 상기 서술한 공정땜납이나 에폭시 수지 조성물에 도전성 입자를 배합한 도전성 접착제로는, 광의 반사가 충분하지 않고, 광의 취출효율이 뒤떨어지는 것이 문제가 되고 있다. 나아가, 광반도체 디바이스로 했을 때의 설계의 자유도의 면에서도, 다이본드재에는 고투명성이 요구되고 있다.
Conventionally, as an adhesive for mounting a vertical LED chip on a wiring board, a conductive solder or a conductive adhesive containing conductive particles in an epoxy resin composition is widely used. However, the process using the process solder is undesirable because it damages the light emitting layer of the optical semiconductor by heat in order to melt the solder necessary for die bonding. In addition, recently, with the above-mentioned process solder or a conductive adhesive containing conductive particles in the epoxy resin composition, there is a problem that the reflection of light is insufficient and the light extraction efficiency is poor. Furthermore, from the viewpoint of the degree of freedom of design in the case of optical semiconductor devices, the die bond material is required to have high transparency.
한편, 도전성 접착제를 이용한 예로서, 예를 들어, 특허문헌 1에서는, 비스페놀A형 에폭시 수지 또는 비스페놀F형 에폭시 수지와 지환식 에폭시 수지를 병용하고, 나아가 자외선흡수제로서 벤조트리아졸 유도체를 첨가함으로써 450~500nm 부근의 광에 대한 내광성을 개선한 도전성 접착제가 제안되어 있다. 그러나, 이 발명에 있어서의 조성물은, 백색의 산화티탄이나, 유색의 도전성 입자를 많이 함유하므로, 고투명한 접착제는 되지 않는다.
On the other hand, as an example using a conductive adhesive, for example, in Patent Document 1, a bisphenol A type epoxy resin or bisphenol F type epoxy resin and an alicyclic epoxy resin are used in combination, and further, a benzotriazole derivative is added as an ultraviolet absorbent, There has been proposed a conductive adhesive improved in light resistance to light in the vicinity of ~ 500 nm. However, since the composition of the present invention contains a large amount of white titanium oxide or colored conductive particles, a highly transparent adhesive can not be obtained.
특허문헌 2에는, 특정의 도전성 분말, (3,5-디글리시딜이소시아눌릴)알킬기를 갖는 오르가노폴리실록산 및 글리시딜기와 반응하는 경화촉매(아민계 경화제, 페놀계 경화제, 산무수물계 경화제)를 함유하는, 광반도체 소자용 다이본드재가 제안되어 있다. 그러나, 이소시아눌릴기로 대표되는 유기기가, 단파장의 광에 의해 열화되어, 시간경과에 따라 변색, 분해된다는 문제가 발생하고 있다. 나아가, 이 발명에서는 수지성분의 합계 100질량부에 대하여 350~800질량부의 도전성 입자를 첨가하기 때문에, 고투명한 접착제는 되지 않는다.
특허문헌 3에는, (a)(메트)아크릴산알킬에스테르-부타디엔-스티렌 공중합체 또는 복합체, 및, 실리콘-(메트)아크릴산 공중합체 또는 복합체로 이루어진 군으로부터 선택되는 적어도 1종을 포함하는 유기미립자와, (b)라디칼 중합성 화합물과, (c)라디칼 중합개시제와, (h)도전성 입자를 함유하고, (h)도전성 입자의 함유량이, 접착제 조성물의 고형분 전체적을 기준으로 하여 0.1~30체적%인, 접착제 조성물, 및 이 접착제 조성물로 이루어진 필름상 접착제가 제안되어 있다. 그러나, 상기와 마찬가지로, (b)라디칼 중합성 화합물에는 글리시딜기로 대표되는 유기기가 포함되어 있고, 단파장의 광에 의해 열화되어, 시간경과에 따라 변색, 분해된다는 문제가 발생하고 있다. 또한, 도전성 입자는 접착제 조성물의 고형분 전체적을 기준으로 하여 0.1~30체적% 함유된다고 하나, 경화물의 광투과율, 투명성에 관한 기술은 보이지 않고, 또한, 본 발명자들이 검증한 결과, 이 범위의 첨가량으로는 고투명한 재료는 되지 않는다. 나아가, 이 발명에서는, 도전성 입자의 평균입경은, 양호한 분산성 및 도전성을 얻는 관점에서, 1~18μm인 것이 바람직하다는 기재가 있으나, 이 범위의 평균입경을 갖는 도전성 수지재료로는, 광반도체 소자를 배선판에 다이본드(도전접속)했을 때의 BLT(Bond line thickness)가 두꺼워지고, 방열성도 열화되는 결과가 되어, 유용한 고투명 다이본드재는 되지 않는다.
본 발명은 상기 문제점을 감안하여 이루어진 것으로, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 내열성 및 내광성을 갖는 경화물을 부여하는 투명수지 조성물을 제공하는 것을 목적으로 한다. 또한, 이 조성물로 이루어진 접착제, 이 조성물로 이루어진 다이본드재, 이 조성물을 이용한 도전접속방법, 및 이 방법에 의해 얻어진 광반도체 장치를 제공하는 것을 목적으로 한다.
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a transparent resin composition that is highly transparent, has excellent adhesive strength and workability, and is provided with a cured product having heat resistance and light resistance. It is also an object of the present invention to provide an adhesive made of this composition, a die bond material made of this composition, a conductive connection method using this composition, and an optical semiconductor device obtained by this method.
상기 목적을 달성하기 위하여, 본 발명에서는, 투명수지 조성물로서,In order to achieve the above object, in the present invention,
(A) (A-1) 하기 일반식(1)로 표시되는 구조를 분자 중에 적어도 1개 갖는 오르가노폴리실록산: 100질량부,(A) (A-1) 100 parts by mass of an organopolysiloxane having at least one structure represented by the following general formula (1) in a molecule,
[화학식 1][Chemical Formula 1]
[식 중, m은 0, 1, 2 중 어느 하나이며, R1은 수소원자, 페닐기 또는 할로겐화페닐기, R2는 수소원자 또는 메틸기, R3은 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~12의 1가의 유기기, Z1은 -R4-, -R4-O-, -R4(CH3)2Si-O-(R4는 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기) 중 어느 하나, Z2는 산소원자 또는 치환 혹은 비치환으로 동일 혹은 상이할 수도 있는 탄소수 1~10의 2가의 유기기이다.]R 1 is a hydrogen atom, a phenyl group or a halogenated phenyl group, R 2 is a hydrogen atom or a methyl group, R 3 is a substituted or unsubstituted, Z 1 represents -R 4 -, -R 4 -O-, -R 4 (CH 3 ) 2 Si-O- (wherein R 4 may be substituted or unsubstituted and may be the same or different And Z 2 is an oxygen atom or a divalent organic group having 1 to 10 carbon atoms which may be the same or different and are substituted or unsubstituted.]
(A-2) 유기과산화물: 상기 (A-1)성분의 합계량 100질량부에 대하여, 0.1~10질량부를 포함하는 실리콘 조성물과,(A-2) Organic peroxide: a silicone composition comprising 0.1 to 10 parts by mass based on 100 parts by mass of the total amount of the component (A-1)
(B) 평균입경이 1μm 이하인 도전성 입자(B) conductive particles having an average particle diameter of 1 mu m or less
를 함유하는 것이며,, ≪ / RTI >
상기 (B)성분의 함유량이, 상기 (A)성분의 고형분을 기준으로 하여 0체적% 보다 크고, 또한 0.1체적% 미만인 범위이며,The content of the component (B) is larger than 0% by volume and less than 0.1% by volume based on the solid content of the component (A)
상기 투명수지 조성물을 경화하여 얻어지는 2mm 두께의 경화물의 전광선 투과율이 70% 이상이며, 또한 헤이즈값이 60% 이하인 것을 특징으로 하는 투명수지 조성물을 제공한다.
Wherein the cured product having a thickness of 2 mm obtained by curing the transparent resin composition has a total light transmittance of 70% or more and a haze value of 60% or less.
이러한 투명수지 조성물이면, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 또한 내열성 및 내광성이 우수한 경화물을 부여할 수 있다.
Such a transparent resin composition can provide a cured product that is highly transparent, has excellent adhesive strength and workability, and is excellent in heat resistance and light resistance.
또한, 상기 (A-1)성분의 오르가노폴리실록산의 Z1이 -R4-이며, 상기 Z2가 산소원자인 것이 바람직하다.
It is also preferable that Z 1 of the organopolysiloxane of the component (A-1) is -R 4 -, and Z 2 is an oxygen atom.
또한, 상기 (A-1)성분의 오르가노폴리실록산의 Z1이 -R4-O- 또는, -R4(CH3)2Si-O-이며, 상기 Z2가 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기인 것이 바람직하다.
The Z 1 of the organopolysiloxane of component (A-1) is -R 4 -O- or -R 4 (CH 3 ) 2 Si-O-, and Z 2 is substituted or unsubstituted or Is preferably a divalent organic group having 1 to 10 carbon atoms which may be different.
이러한 투명수지 조성물이면, (A-1)성분과, (A-2)성분이 분해될 때에 발생하는 프리라디칼이 효과적으로 반응하여, 접착강도 및 작업성이 우수하고, 또한 내열성 및 내광성이 우수한 경화물을 얻을 수 있다.
Such a transparent resin composition can provide a cured product having excellent adhesive strength and workability and having excellent heat resistance and light fastness by effectively reacting the free radicals generated when the component (A-1) and the component (A-2) Can be obtained.
또한, 상기 (A-1)성분의 오르가노폴리실록산이, 하기 일반식(2)로 표시되는 구조를 분자 중에 적어도 1개 갖는 것이 바람직하다.It is also preferable that the organopolysiloxane of the component (A-1) has at least one structure represented by the following general formula (2) in the molecule.
[화학식 2](2)
(식 중, m, R1, R2, R3, R4는 상기와 동일하다.)
(Wherein m, R 1 , R 2 , R 3 and R 4 are as defined above.)
이러한 투명수지 조성물이면, (A-1)성분과, (A-2)성분이 분해될 때에 발생하는 프리라디칼이 보다 효과적으로 반응하여, 접착강도 및 작업성이 우수하고, 또한 내열성 및 내광성이 우수한 경화물을 얻을 수 있다.
Such a transparent resin composition can be used as a transparent resin composition in which the free radicals generated when the component (A-1) and the component (A-2) are decomposed more effectively react to each other and exhibit excellent adhesive strength and workability, Cargo can be obtained.
또한, 상기 (A-1)성분의 오르가노폴리실록산 중에, 0.1mol% 이상의 (SiO2)단위를 갖는 것이 바람직하다.
Further, it is preferable that the organopolysiloxane of the component (A-1) has 0.1 mol% or more of (SiO 2 ) units.
이러한 투명수지 조성물이면, (A-1)성분과, (A-2)성분이 분해될 때에 발생하는 프리라디칼이 더욱 효과적으로 반응하여, 접착강도 및 작업성이 우수하고, 또한 내열성 및 내광성이 우수한 경화물을 얻을 수 있다.
Such a transparent resin composition can be used as a transparent resin composition in which the free radicals generated when the component (A-1) and the component (A-2) are decomposed more effectively react to each other and exhibit excellent adhesive strength and workability, Cargo can be obtained.
나아가 본 발명에서는, 상기 본 발명의 투명수지 조성물로 이루어진 것을 특징으로 하는 접착제를 제공한다.
Further, the present invention provides an adhesive comprising the transparent resin composition of the present invention.
이러한 접착제이면, LED칩을 배선판에 탑재하기 위한 접착제로서 호적하게 이용할 수 있다.
If such an adhesive is used, the LED chip can be suitably used as an adhesive for mounting on a wiring board.
나아가 본 발명에서는, 상기 본 발명의 투명수지 조성물로 이루어진 것을 특징으로 하는 다이본드재를 제공한다.
Further, the present invention provides a die bond material comprising the transparent resin composition of the present invention.
이러한 다이본드재이면, LED칩을 배선판에 탑재하기 위한 다이본드재로서 호적하게 이용할 수 있다.
If such a die bond material is used, the LED chip can be used as a die bond material for mounting on a wiring board.
이 경우, 상기 다이본드재를 경화하여 얻어지는 경화물은 BLT(Bond line thickness)가 5μm 이하인 경우에 있어서 사용되는 것이 바람직하다.
In this case, the cured product obtained by curing the die bond material is preferably used when the bond line thickness (BLT) is 5 占 퐉 or less.
이러한 다이본드재이면, 광반도체 소자와 기판의 도전접속을 확실히 달성할 수 있다.
With such a die bond material, it is possible to reliably achieve a conductive connection between the optical semiconductor element and the substrate.
나아가 본 발명에서는, 상기 본 발명의 투명수지 조성물을 이용하여, BLT를 5μm 이하로 하여 광반도체 소자와 기판을 도전접속하는 것을 특징으로 하는 도전접속방법을 제공한다.
Further, in the present invention, there is provided a conductive connection method characterized in that the transparent resin composition of the present invention is used so that the optical semiconductor element and the substrate are electrically connected with BLT of 5 μm or less.
이러한 도전접속방법이면, 광반도체 소자와 기판의 도전접속을 확실히 달성할 수 있다.
With such a conductive connection method, the conductive connection between the optical semiconductor element and the substrate can be reliably achieved.
나아가 본 발명에서는, 상기 본 발명의 도전접속방법에 의해 광반도체 소자와 기판이 도전접속된 것을 특징으로 하는 광반도체 장치를 제공한다.
Further, in the present invention, there is provided an optical semiconductor device characterized in that the optical semiconductor element and the substrate are electrically connected by the above-mentioned conductive connection method of the present invention.
본 발명의 투명수지 조성물은, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 내열성 및 내광성이 우수한 경화물을 부여할 수 있다. 또한, 본 발명의 도전접속방법이면, 광반도체 소자와 기판의 도전접속을 확실히 달성할 수 있다. 이로 인해, 본 발명의 도전접속방법에 의해 얻어진 광반도체 장치는, 광취출효율이 높고, 내열성 및 내광성을 갖는 것이 되며, 도전접속이 확실히 달성된 것이 된다.
INDUSTRIAL APPLICABILITY The transparent resin composition of the present invention can give a cured product which is highly transparent, excellent in bonding strength and workability, and excellent in heat resistance and light resistance. Further, according to the conductive connection method of the present invention, the conductive connection between the optical semiconductor element and the substrate can be reliably achieved. Thus, the optical semiconductor device obtained by the conductive connection method of the present invention has high light extraction efficiency, heat resistance and light resistance, and the conductive connection is surely achieved.
본 발명의 투명수지 조성물은, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 내열성 및 내광성을 갖는 경화물을 부여할 수 있다. 이로 인해, 본 발명의 투명수지 조성물은, 접착제 및 다이본드재로서 호적하게 이용할 수 있다. 이러한 접착제 및 다이본드재는, LED칩, 특히 수직형 LED칩을 배선판에 탑재하기 위한 접착제로서 호적하게 이용할 수 있다. 또한, 본 발명의 도전접속방법이면, 광반도체 소자와 기판의 도전접속을 확실히 달성할 수 있다. 따라서, 본 발명의 도전접속방법에 의해 얻어진 광반도체 장치는, 광취출효율이 높고, 내열성 및 내광성을 갖는 것이 되며, 도전접속이 확실히 달성된 것이 된다. 또한, 본 발명의 투명수지 조성물은, 고투명한 이방도전성 조성물로서도 기능할 수 있다.
The transparent resin composition of the present invention can give a cured product having high transparency, excellent adhesive strength and workability, and heat resistance and light resistance. As a result, the transparent resin composition of the present invention can be suitably used as an adhesive and a die bond material. Such adhesives and die bond materials can be suitably used as an adhesive for mounting an LED chip, in particular, a vertical LED chip on a wiring board. Further, according to the conductive connection method of the present invention, the conductive connection between the optical semiconductor element and the substrate can be reliably achieved. Therefore, the optical semiconductor device obtained by the conductive connection method of the present invention has high light extraction efficiency, heat resistance, and light resistance, and the conductive connection is surely achieved. In addition, the transparent resin composition of the present invention can also function as a highly transparent anisotropic conductive composition.
도 1은 본 발명의 투명수지 조성물을 이용하여 광반도체 소자와 기판이 도전접속된 광반도체 장치의 일례를 나타낸 단면도이다.1 is a cross-sectional view showing an example of a photosemiconductor device in which a photosemiconductor element and a substrate are electrically connected by using the transparent resin composition of the present invention.
이하, 본 발명을 보다 상세하게 설명한다.
Hereinafter, the present invention will be described in more detail.
상기와 같이, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 내열성 및 내광성을 갖는 경화물을 부여하는 투명수지 조성물이 요구되고 있다.
As described above, there is a demand for a transparent resin composition that is highly transparent, has excellent adhesive strength and workability, and imparts a cured product having heat resistance and light resistance.
본 발명자들은, 상기 목적을 달성하기 위하여 예의검토를 행하였다. 그 결과, 하기 (A)~(B)성분을 함유하는 투명수지 조성물로서, 상기 (B)성분의 함유량이, 상기 (A)성분의 고형분을 기준으로 하여 0체적%보다 크고, 또한 0.1체적% 미만인 범위이며, 상기 투명수지 조성물을 경화하여 얻어지는 2mm 두께의 경화물의 전광선 투과율이 70% 이상이며, 또한 헤이즈값이 60% 이하인 투명수지 조성물이, 상기 과제를 해결할 수 있는 것을 발견하여, 본 발명을 완성시켰다.
The present inventors have made extensive studies in order to achieve the above object. As a result, it was found that a transparent resin composition containing the following components (A) to (B), wherein the content of the component (B) is larger than 0% by volume, more preferably 0.1% , And a transparent resin composition having a total light transmittance of 70% or more and a haze value of 60% or less of a 2-mm-thick cured product obtained by curing the transparent resin composition can solve the above problems, Completed.
이하, 본 발명에 대하여 보다 구체적으로 설명하나, 본 발명은 이것으로 한정되는 것은 아니다.
Hereinafter, the present invention will be described in more detail, but the present invention is not limited thereto.
본 발명의 투명수지 조성물은,In the transparent resin composition of the present invention,
(A) (A-1) 하기 일반식(1)로 표시되는 구조를 분자 중에 적어도 1개 갖는 오르가노폴리실록산: 100질량부,(A) (A-1) 100 parts by mass of an organopolysiloxane having at least one structure represented by the following general formula (1) in a molecule,
[화학식 3](3)
[식 중, m은 0, 1, 2 중 어느 하나이며, R1은 수소원자, 페닐기 또는 할로겐화페닐기, R2는 수소원자 또는 메틸기, R3은 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~12의 1가의 유기기, Z1은 -R4-, -R4-O-, -R4(CH3)2Si-O-(R4는 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기) 중 어느 하나, Z2는 산소원자 또는 치환 혹은 비치환으로 동일 혹은 상이할 수도 있는 탄소수 1~10의 2가의 유기기이다.]R 1 is a hydrogen atom, a phenyl group or a halogenated phenyl group, R 2 is a hydrogen atom or a methyl group, R 3 is a substituted or unsubstituted, Z 1 represents -R 4 -, -R 4 -O-, -R 4 (CH 3 ) 2 Si-O- (wherein R 4 may be substituted or unsubstituted and may be the same or different And Z 2 is an oxygen atom or a divalent organic group having 1 to 10 carbon atoms which may be the same or different and are substituted or unsubstituted.]
(A-2) 유기과산화물: 상기 (A-1)성분의 합계량 100질량부에 대하여, 0.1~10질량부를 포함하는 실리콘 조성물과,(A-2) Organic peroxide: a silicone composition comprising 0.1 to 10 parts by mass based on 100 parts by mass of the total amount of the component (A-1)
(B) 평균입경이 1μm 이하인 도전성 입자(B) conductive particles having an average particle diameter of 1 mu m or less
를 함유하는 것이며,, ≪ / RTI >
상기 (B)성분의 함유량이, 상기 (A)성분의 고형분을 기준으로 하여 0체적%보다 크고, 또한 0.1체적% 미만인 범위이며,The content of the component (B) is larger than 0% by volume and less than 0.1% by volume based on the solid content of the component (A)
상기 투명수지 조성물을 경화하여 얻어지는 2mm 두께의 경화물의 전광선 투과율이 70% 이상이며, 또한 헤이즈값이 60% 이하인 투명수지 조성물이다.
The transparent resin composition is a transparent resin composition having a total light transmittance of 70% or more and a haze value of 60% or less of a 2-mm-thick cured product obtained by curing the transparent resin composition.
상기와 같이 본 발명의 투명수지 조성물은 이 조성물을 2mm 두께의 경화물로 했을 때의 전광선 투과율이 70% 이상이며, 바람직하게는 80% 이상이다. 전광선 투과율이 70% 이상이면, 경화후의 투명수지 조성물은 고투명한 상태를 유지할 수 있다. 전광선 투과율이 70% 미만이 되면, 경화후의 투명수지 조성물은 착색, 혹은 탁함이 발생한 것을 의미하고, 경화물이 고투명해지지는 않는다. 전광선 투과율의 상한은 특별히 제한은 없고, 보다 크면 경화물은 투명해지고, LED디바이스로부터의 광의 취출의 방해가 되는 일도 없으므로 바람직하다.
As described above, the transparent resin composition of the present invention has a total light transmittance of 70% or more, preferably 80% or more when the composition is a cured product having a thickness of 2 mm. If the total light transmittance is 70% or more, the transparent resin composition after curing can maintain a high transparency. When the total light transmittance is less than 70%, it means that the transparent resin composition after curing has undergone coloring or turbidity, and the cured product does not become transparent. The upper limit of the total light transmittance is not particularly limited, and it is preferable that the upper limit of the total light transmittance is higher because the cured product becomes transparent and does not interfere with the extraction of light from the LED device.
또한, (헤이즈값(%))=(확산광투과율)/(전광선 투과율)×100으로 정의되는 것으로부터 이해되는 바와 같이, 확산광성분의 증대 및 전광선 투과율의 감소에 수반하여 헤이즈값은 증대하고, 경화물은 반투명으로부터 미탁, 더 나아가 백탁에 도달한다.
Further, as understood from (haze value (%)) = (diffused light transmittance) / (total light transmittance) x 100, the haze value increases with the increase of the diffused light component and the decrease of the total light transmittance , The cured product reaches from translucency to cloudiness, further to cloudiness.
본 발명의 투명수지 조성물은 이 조성물을 2mm 두께의 경화물로 했을 때의 헤이즈값이 60% 이하이며, 이것은, 경화물이 투명으로부터 반투명의 흐림을 갖는 상태인 것을 의미한다. 상기 헤이즈값은 바람직하게는 40% 이하이다. 헤이즈값이 60%를 초과하면, 경화물은 흐려져, 광을 산란시키는 미립자가 많이 존재하므로, 고투명이 아니다. 헤이즈값이 60% 이하이면, LED디바이스로부터의 광의 취출의 방해가 되는 일도 없으므로 바람직하다. 헤이즈값의 하한은 특별히 제한은 없고, 보다 작으면 경화물의 흐림이 적어지고, 즉, 투명해지고, LED디바이스로부터의 광의 취출의 방해가 되는 일도 없으므로 바람직하다.
The transparent resin composition of the present invention has a haze value of 60% or less when the composition is used as a 2-mm-thick cured product, which means that the cured product has a transparent to translucent haze. The haze value is preferably 40% or less. If the haze value exceeds 60%, the cured product becomes cloudy, and there are many fine particles scattering light, so that it is not highly transparent. When the haze value is 60% or less, it is preferable that the haze value is not hindered from taking out the light from the LED device. The lower limit of the haze value is not particularly limited, and it is preferable that the haze value is smaller because the haze of the cured product is reduced, that is, becomes transparent and does not interfere with the extraction of light from the LED device.
[(A)실리콘 조성물][(A) Silicone composition]
(A)실리콘 조성물은, 상기의 (A-1)성분을 100질량부, 상기의 (A-2)를 (A-1)성분의 합계량 100질량부에 대하여, 0.1~10질량부를 포함하는 것이다.
The silicone composition (A) contains 0.1 to 10 parts by mass of 100 parts by mass of the above-mentioned component (A-1) and 100 parts by mass of the total of the component (A-2) .
[(A-1) 오르가노폴리실록산][(A-1) organopolysiloxane]
(A-1)성분인 오르가노폴리실록산은, 하기 일반식(1)로 표시되는 구조를 분자 중에 적어도 1개 갖는 오르가노폴리실록산이다.The organopolysiloxane as the component (A-1) is an organopolysiloxane having at least one structure represented by the following general formula (1) in the molecule.
[화학식 4][Chemical Formula 4]
[식 중, m은 0, 1, 2 중 어느 하나이며, R1은 수소원자, 페닐기 또는 할로겐화페닐기, R2는 수소원자 또는 메틸기, R3은 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~12의 1가의 유기기, Z1은 -R4-, -R4-O-, -R4(CH3)2Si-O-(R4는 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기) 중 어느 하나, Z2는 산소원자 또는 치환 혹은 비치환으로 동일 혹은 상이할 수도 있는 탄소수 1~10의 2가의 유기기이다.]
R 1 is a hydrogen atom, a phenyl group or a halogenated phenyl group, R 2 is a hydrogen atom or a methyl group, R 3 is a substituted or unsubstituted, Z 1 represents -R 4 -, -R 4 -O-, -R 4 (CH 3 ) 2 Si-O- (wherein R 4 may be substituted or unsubstituted and may be the same or different And Z 2 is an oxygen atom or a divalent organic group having 1 to 10 carbon atoms which may be the same or different and are substituted or unsubstituted.]
(A-1)성분인 오르가노폴리실록산 중의, Z1, Z2의 조합으로는, Z1이 -R4-이며, Z2가 산소원자인 것이나, Z1이 -R4-O- 또는, -R4(CH3)2Si-O-이며, Z2가 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기인 것이 바람직하다. 이러한 (A-1)성분을 포함하는 투명수지 조성물이면, (A-1)성분과, (A-2)성분이 분해될 때에 발생하는 프리라디칼이 효과적으로 반응하여, 접착강도 및 작업성이 우수하고, 또한 내열성 및 내광성이 우수한 경화물을 얻을 수 있다.
As the combination of Z 1 and Z 2 in the organopolysiloxane which is the component (A-1), Z 1 is -R 4 - and Z 2 is an oxygen atom, or Z 1 is -R 4 -O-, -R 4 (CH 3 ) 2 Si-O-, and Z 2 is a substituted or unsubstituted divalent organic group having 1 to 10 carbon atoms which may be the same or different. The transparent resin composition containing the component (A-1) effectively reacts with free radicals generated when the component (A-1) and the component (A-2) are decomposed, , And a cured product excellent in heat resistance and light resistance can be obtained.
또한, (A-1)성분의 오르가노폴리실록산 중에, 0.1mol% 이상의 (SiO2)단위를 갖는 것이 바람직하다. 이러한 (A-1)성분을 포함하는 투명수지 조성물이면, (A-1)성분과, (A-2)성분이 분해될 때에 발생하는 프리라디칼이 더욱 효과적으로 반응하여, 접착강도 및 작업성이 우수하며, 또한 내열성 및 내광성이 우수한 경화물을 얻을 수 있다.
Further, it is preferable that the organopolysiloxane of the component (A-1) has 0.1 mol% or more of (SiO 2 ) units. The transparent resin composition containing the component (A-1) reacts more effectively with the free radicals generated when the components (A-1) and (A-2) are decomposed, And a cured product excellent in heat resistance and light resistance can be obtained.
나아가, (A-1)성분인 오르가노폴리실록산이, 하기 일반식(2)로 표시되는 구조를 분자 중에 적어도 1개 갖는 것이 바람직하다. 이러한 (A-1)성분을 포함하는 투명수지 조성물이면, (A-1)성분과, (A-2)성분이 분해될 때에 발생하는 프리라디칼이 보다 효과적으로 반응하여, 접착강도 및 작업성이 우수하며, 또한 내열성 및 내광성이 우수한 경화물을 얻을 수 있다.Furthermore, it is preferable that the organopolysiloxane which is the component (A-1) has at least one structure represented by the following general formula (2) in the molecule. The transparent resin composition containing the component (A-1) reacts more effectively with the free radicals generated when the component (A-1) and the component (A-2) are decomposed, And a cured product excellent in heat resistance and light resistance can be obtained.
[화학식 5][Chemical Formula 5]
(식 중, m, R1, R2, R3, R4는 상기와 동일하다.)
(Wherein m, R 1 , R 2 , R 3 and R 4 are as defined above.)
(A-1)성분인 오르가노폴리실록산은, 25℃에서의 점도가 10mPa·s 이상인 액상 또는 고체의 분지상 또는 3차원 망상구조의 오르가노폴리실록산인 것이 바람직하다.
The organopolysiloxane as the component (A-1) is preferably a liquid or solid branched or three-dimensional network-structured organopolysiloxane having a viscosity at 25 ° C of 10 mPa · s or more.
상기 식(1)에 있어서, R3으로 나타내는 규소원자에 결합한 치환 또는 비치환으로 동일 또는 상이할 수도 있는 1가의 유기기로는, 통상, 탄소수 1~12, 바람직하게는 1~8 정도의 탄화수소기를 들 수 있고, 구체적으로는 메틸기, 에틸기, 프로필기, 이소프로필기, 부틸기, 이소부틸기, tert-부틸기, 펜틸기, 네오펜틸기, 헥실기, 시클로헥실기, 옥틸기, 노닐기, 데실기 등의 알킬기, 페닐기, 톨릴기, 자일릴기, 나프틸기 등의 아릴기, 벤질기, 페닐에틸기, 페닐프로필기 등의 아랄킬기, 비닐기, 알릴기, 프로페닐기, 이소프로페닐기, 부테닐기, 헥세닐기, 시클로헥세닐기, 옥테닐기 등의 알케닐기나, 이들 기의 수소원자의 일부 또는 전부를 불소, 브롬, 염소 등의 할로겐원자, 시아노기 등으로 치환한 것, 예를 들어 클로로메틸기, 클로로프로필기, 브로모에틸기, 트리플로로프로필기 등의 할로겐치환알킬기나 시아노에틸기 등을 들 수 있다.
In the formula (1), the substituted or unsubstituted monovalent organic group which may be bonded to the silicon atom represented by R 3 is usually a hydrocarbon group having 1 to 12 carbon atoms, preferably 1 to 8 carbon atoms Specific examples thereof include a methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, pentyl group, neopentyl group, hexyl group, cyclohexyl group, octyl group, An aryl group such as phenyl group, tolyl group, xylyl group and naphthyl group, an aralkyl group such as benzyl group, phenylethyl group and phenylpropyl group, a vinyl group, an allyl group, a propenyl group, an isopropenyl group and a butenyl group Alkenyl groups such as a hexenyl group, a cyclohexenyl group and an octenyl group, and those obtained by substituting a part or all of the hydrogen atoms of these groups with a halogen atom such as fluorine, bromine or chlorine, a cyano group or the like, A methyl group, a chloropropyl group, a bromoethyl group, a tri Furnace and a propyl group can be cited halogen-substituted alkyl group or cyano group and the like, such as.
상기 식(1)에 있어서, R4로 나타내는 치환 또는 비치환으로 동일 또는 상이할 수도 있는 2가의 유기기로는, 구체적으로는, 메틸렌기, 에틸렌기, 프로필렌기, 부틸렌기 등의 탄소원자수 1~10의 알킬렌기 등의 2가 탄화수소기가 예시되고, 탄소원자수 1~3의 알킬렌기가 바람직하다.
Specific examples of the divalent organic group which may be the same or different and represent a substituted or unsubstituted group represented by R 4 in the formula (1) include a methylene group, an ethylene group, a propylene group and a butylene group, A divalent hydrocarbon group such as an alkylene group having 1 to 10 carbon atoms, and an alkylene group having 1 to 3 carbon atoms are preferable.
이하에 (A-1)성분인 오르가노폴리실록산을 예시한다.(하기 식에 있어서, Me는 메틸기를 나타낸다.) 이 성분은 단일성분일 수도, 다른 성분과 병용할 수도 있다. 또한, 하기 식에 있어서, 상기 식(1) 중의 R3에 상당하는 기가, 메틸기인 경우를 예시하고 있으나, 기타 기(치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~12의 1가의 유기기)로도 변경할 수 있다.
Hereinafter, the organopolysiloxane which is the component (A-1) is exemplified. (In the following formula, Me represents a methyl group.) This component may be a single component or may be used in combination with other components. In the following formula, the case where the group corresponding to R 3 in the formula (1) is a methyl group is exemplified, but other groups (substituted or unsubstituted monovalent groups having 1 to 12 carbon atoms, which may be the same or different, Equipment).
[화학식 6][Chemical Formula 6]
[화학식 7](7)
하기 식에 나타낸, MA단위, M단위, Q단위가, MA:M:Q=1:4:6의 비율로 포함되고, 분자량이 폴리스티렌 환산의 중량평균 분자량으로, 5000인 오르가노폴리실록산.Wherein the MA unit, the M unit and the Q unit represented by the following formulas are contained in a ratio of MA: M: Q = 1: 4: 6, and the weight average molecular weight of the organopolysiloxane is 5000.
[화학식 8][Chemical Formula 8]
[화학식 9][Chemical Formula 9]
[화학식 10][Chemical formula 10]
하기 식에 나타낸, MA-D단위, D단위, T단위가, MA-D:D:T=2:6:7의 비율로 포함되고, 분자량이 폴리스티렌 환산의 중량평균 분자량으로, 3500인 오르가노폴리실록산.D-unit, D-unit, and T-unit as shown in the following formulas are contained in a ratio of MA-D: D: T = 2: 6: 7, and the weight average molecular weight in terms of polystyrene Polysiloxane.
[화학식 11](11)
[화학식 12][Chemical Formula 12]
[화학식 13][Chemical Formula 13]
(A-1)성분에는, 조성물의 점도나 경화물의 경도를 조정하는 등의 목적으로, 이하에 나타낸 바와 같은 실리콘을 포함하는 반응성 희석제나, 실리콘을 포함하지 않는 반응성 희석제를 첨가할 수 있다.
For the purpose of adjusting the viscosity of the composition and the hardness of the cured product, a reactive diluent containing silicon or a reactive diluent containing no silicone may be added to the component (A-1).
실리콘을 포함하는 반응성 희석제의 구체적인 예로는, 하기 식(3)~(7)로 표시되는 오르가노폴리실록산을 들 수 있다.(하기 식에 있어서, Me는 메틸기를 나타낸다.) 이 성분은 단일일 수도, 다른 성분과 병용일 수도 있다.
Specific examples of the reactive diluent containing silicon include organopolysiloxanes represented by the following formulas (3) to (7). (In the following formula, Me represents a methyl group.) This component may be a single , Or may be combined with other components.
[화학식 14][Chemical Formula 14]
[화학식 15][Chemical Formula 15]
[화학식 16][Chemical Formula 16]
(식 중, p는 18, q는 180이다.)
(Where p is 18 and q is 180).
[화학식 17][Chemical Formula 17]
(식 중, p'는 20, q는 180이다.)
(Wherein p 'is 20 and q is 180).
[화학식 18][Chemical Formula 18]
(식 중, p는 18, q는 180이다.)
(Where p is 18 and q is 180).
이러한 (A-1)성분의 합성방법으로는, 예를 들어 하기에 나타낸 오르가노하이드로겐실란,Examples of the method for synthesizing the component (A-1) include organohydrogensilane,
[화학식 19][Chemical Formula 19]
(식 중, m, R1, R2, R3, Z1은 상기와 동일하다.)(Wherein m, R 1 , R 2 , R 3 and Z 1 are as defined above.)
바람직하게는 하기 식에 나타낸 화합물,Preferably a compound represented by the following formula,
[화학식 20][Chemical Formula 20]
(식 중, m, R1, R2, R3, Z1, Z2는 상기와 동일하다.)(In the formula, m, R 1 , R 2 , R 3 , Z 1 and Z 2 are the same as above.)
보다 구체적으로는, 1,3-비스(3-메타크릴록시프로필)테트라메틸디실록산과 1,1,3,3-테트라메틸디실록산을 산촉매 존재하에서 평형화 반응함으로써 얻어지는 (3-메타크릴록시프로필)-1,1,3,3-테트라메틸디실록산과, 지방족 불포화기(예를 들어, 에틸렌성 불포화기, 및 아세틸렌성 불포화기를 들 수 있다.)를 포함하는 오르가노폴리실록산을, 염화백금산촉매 존재하에서 하이드로실릴화 반응시키면 되고, 이 방법으로 본 발명에 호적한 것을 제조할 수 있으나, 상기의 합성방법으로 제한되는 것은 아니다. 또한, 지방족 불포화기를 포함하는 오르가노폴리실록산은, 지방족 불포화기를 갖는 오르가노알콕시실란을 포함하는 알콕시실란의 (공)가수분해축합 등 공지의 방법으로 제조할 수 있고, 시판의 것을 이용할 수도 있다.
More specifically, there can be mentioned (3-methacryloxypropyl) tetramethyldisiloxane obtained by equilibration reaction of 1,3-bis (3-methacryloxypropyl) tetramethyldisiloxane with 1,1,3,3-tetramethyldisiloxane in the presence of an acid catalyst ) -1,1,3,3-tetramethyldisiloxane and an aliphatic unsaturated group (for example, an ethylenic unsaturated group and an acetylenic unsaturated group) in the presence of a chloroplatinic acid catalyst , And this method can be used to produce the compound of the present invention. However, the method is not limited to the above-mentioned synthesis method. The organopolysiloxane containing an aliphatic unsaturated group can be produced by a known method such as (co) hydrolysis and condensation of an alkoxy silane containing an organoalkoxysilane having an aliphatic unsaturated group, or a commercially available organopolysiloxane can also be used.
실리콘을 포함하지 않는 반응성 희석제로는, H2C=CGCO2R5에 의해 나타낸 바와 같은 (메트)아크릴레이트류가 있고, 상기 식 중, G는, 수소, 할로겐, 탄소원자 1~4개의 알킬기 중 어느 하나이며; R5는, 1~16개의 탄소원자를 갖는 알킬기, 시클로알킬기, 알케닐기, 시클로알케닐기, 알카릴기, 아랄킬기, 아릴기 중 어느 하나로부터 선택되고, 이들 중 어느 하나는, 필요에 따라, 규소, 산소, 할로겐, 카르보닐, 하이드록실, 에스테르, 카르본산, 요소, 우레탄, 카바메이트, 아민, 아미드, 황, 설포네이트, 설폰 등으로 치환할 수 있다.
Examples of reactive diluents that do not include silicon include (meth) acrylates such as those represented by H 2 C = CGCO 2 R 5 wherein G is a hydrogen, a halogen, an alkyl group of 1 to 4 carbon atoms ≪ / RTI > R 5 is selected from any of alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkaryl, aralkyl and aryl groups having 1 to 16 carbon atoms, The substituent may be substituted with oxygen, halogen, carbonyl, hydroxyl, ester, carboxylic acid, urea, urethane, carbamate, amine, amide, sulfur, sulfonate, sulfone and the like.
반응성 희석제로서 특히 바람직한 (메트)아크릴레이트류로는, 폴리에틸렌글리콜디(메트)아크릴레이트, 에톡시화비스페놀-A(메트)아크릴레이트(″EBIPA″ 또는 ″EBIPMA″)와 같은 비스페놀-A디(메트)아크릴레이트, 테트라하이드로푸란(메트)아크릴레이트 및 디(메트)아크릴레이트, 시트로넬릴아크릴레이트 및 시트로넬릴메타크릴레이트, 하이드록시프로필(메트)아크릴레이트, 헥산디올디(메트)아크릴레이트(″HDDA″ 또는 ″HDDMA″), 트리메틸올프로판트리(메트)아크릴레이트, 테트라하이드로디시클로펜타디에닐(메트)아크릴레이트, 에톡시화트리메틸올프로판트리아크릴레이트(″ETTA″), 트리에틸렌글리콜디아크릴레이트 및 트리에틸렌글리콜디메타크릴레이트(″TRIEGMA″), 이소보닐아크릴레이트 및 이소보닐메타크릴레이트에 상응하는 아크릴레이트에스테르가 있다. 물론, 이들의 (메트)아크릴레이트류의 조합도 반응성 희석제로서 사용할 수 있다.
Particularly preferred (meth) acrylates as reactive diluents include bisphenol-A di (meth) acrylates such as polyethylene glycol di (meth) acrylate, ethoxylated bisphenol-A (meth) acrylate ("EBIPA" or "EBIPMA" ) Acrylate, tetrahydrofuran (meth) acrylate and di (meth) acrylate, citronellyl acrylate and citronellyl methacrylate, hydroxypropyl (meth) acrylate, hexanediol di ("HDDA" or "HDDMA"), trimethylolpropane tri (meth) acrylate, tetrahydrodicyclopentadienyl (meth) acrylate, ethoxylated trimethylolpropane triacrylate ("ETTA" Diacrylate and triethylene glycol dimethacrylate (" TRIEGMA "), isobornyl acrylate and isobornyl methacrylate. There are hotel. Of course, combinations of these (meth) acrylates can also be used as reactive diluents.
반응성 희석제를 첨가하는 경우의 첨가량으로는, 0.01~30질량%의 범위가 바람직하고, 0.05~10질량%의 범위가 보다 바람직하다.
The addition amount of the reactive diluent is preferably in the range of 0.01 to 30 mass%, more preferably in the range of 0.05 to 10 mass%.
본 발명의 투명수지 조성물은, 특정의 용도에 있어서 원하는 바와 같은 경화 또는 미경화특성을 개변시키는 다른 성분도 포함시킬 수 있다. 예를 들어, (메트)아크릴록시프로필트리메톡시실란, 트리알킬- 또는 트리알릴-이소시아누레이트, 글리시독시프로필트리메톡시실란, 비닐트리메톡시실란 등과 같은 접착보조제를 포함할 수 있고, 약 20질량%까지의 양을 포함하는 것이 바람직하다. 다른 임의성분은, 비(메트)아크릴실리콘희석제 또는 가소제를 들 수 있고, 약 30질량%까지의 양을 포함하는 것이 바람직하다. 비(메트)아크릴실리콘류로는, 100~500mPa·s의 점도를 갖는 트리메틸실릴말단화오일, 및 실리콘고무를 들 수 있다. 비(메트)아크릴실리콘류는, 비닐기와 같은 공경화성기를 포함할 수 있다.
The transparent resin composition of the present invention may also contain other components that modify the curing or uncured properties as desired in certain applications. For example, adhesion adjuvants such as (meth) acryloxypropyltrimethoxysilane, trialkyl- or triallyl-isocyanurate, glycidoxypropyltrimethoxysilane, vinyltrimethoxysilane, and the like , Up to about 20% by mass. Other optional components include non-meth (acrylate) silicone diluents or plasticizers, and preferably contain amounts up to about 30% by weight. Examples of the non-metaacrylic silicone oils include trimethylsilyl terminated oils having a viscosity of 100 to 500 mPa · s, and silicone rubbers. The non-(meth) acrylsilicone species may include a pseudo-mercapto group such as a vinyl group.
[(A-2) 유기과산화물][(A-2) organic peroxide]
(A-2)성분인 유기과산화물은, 본 발명의 투명수지 조성물을 원하는 형상으로 성형한 후에, 가열처리를 가하여 가교반응에 의해 경화시키기 위하여 배합되는 성분이며, 목적으로 하는 접속온도, 접속시간, 포트라이프 등에 의해 적당히 선택한다.
The organic peroxide which is the component (A-2) is a component blended for forming the transparent resin composition of the present invention into a desired shape and then curing the mixture by a cross-linking reaction under heat treatment. Port life, etc.
유기과산화물은, 높은 반응성과 긴 포트라이프를 양립하는 관점에서, 반감기 10시간의 온도가 40℃ 이상, 또한, 반감기 1분의 온도가 180℃ 이하인 것이 바람직하고, 반감기 10시간의 온도가 60℃ 이상, 또한, 반감기 1분의 온도가 170℃ 이하인 것이 보다 바람직하다. 또한, 유기과산화물은, 회로부재의 회로전극(접속단자)의 부식을 방지하기 위하여, 염소이온이나 유기산의 함유량이 5000ppm 이하인 것이 바람직하고, 나아가, 가열분해 후에 발생하는 유기산이 적은 것이 보다 바람직하다.
From the viewpoint of achieving high reactivity and long pot life, the organic peroxide preferably has a temperature at a half-life of 10 hours at 40 占 폚 or higher and a half-life of 1 minute at 180 占 폚 or lower, , And more preferably the temperature at a half-life of 1 minute is 170 占 폚 or less. In order to prevent corrosion of circuit electrodes (connection terminals) of the circuit member, the organic peroxide preferably has a content of chlorine ions or organic acids of 5000 ppm or less, and more preferably, less organic acid generated after thermal decomposition.
이 경우, 유기과산화물의 열분해에 의해 발생하는 프리라디칼에 의해, 상기 (A-1)성분 중의 규소원자에 결합한 탄화수소기끼리, 또는 상기 (A-1)성분 중의 비닐기, 알릴기 등의 알케닐기끼리의 결합반응이 발생하여 가교경화물로 할 수 있다.
In this case, the hydrocarbon groups bonded to the silicon atoms in the component (A-1) or the alkenyl groups such as the vinyl group and the allyl group in the component (A-1) may be replaced by the free radicals generated by the thermal decomposition of the organic peroxide Linking reaction between them occurs to give a crosslinked cured product.
유기과산화물로는, 라디칼중합반응 등에 이용되는 공지의 것을 전부 이용할 수 있고, 구체적으로는, 디아실퍼옥사이드, 디알킬퍼옥사이드, 퍼옥시디카보네이트, 퍼옥시에스테르, 퍼옥시케탈, 하이드로퍼옥사이드 및 실릴퍼옥사이드로 이루어진 군으로부터 선택되는 1종 이상이 호적하게 이용된다. 이들 중에서는, 회로부재의 접속구조나 반도체장치에 있어서의 접속단자의 부식을 더욱 억제하기 위하여, 퍼옥시에스테르, 디알킬퍼옥사이드 및 하이드로퍼옥사이드로 이루어진 군으로부터 선택되는 1종 이상이 바람직하다.
As the organic peroxide, all known ones used for radical polymerization and the like can be used. Specific examples thereof include diacyl peroxide, dialkyl peroxide, peroxydicarbonate, peroxyester, peroxyketal, hydroperoxide and silyl peroxide Oxides, and the like. Of these, at least one member selected from the group consisting of peroxyesters, dialkyl peroxides and hydroperoxides is preferable in order to further suppress corrosion of connection members of circuit members and semiconductor devices.
디아실퍼옥사이드로는, 예를 들어, 이소부틸퍼옥사이드, 2,4-디클로로벤조일퍼옥사이드, 3,5,5-트리메틸헥사노일퍼옥사이드, 옥타노일퍼옥사이드, 라우로일퍼옥사이드, 스테알로일퍼옥사이드, 석시닉퍼옥사이드, 벤조일퍼옥시톨루엔 및 벤조일퍼옥사이드를 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
Examples of diacylperoxides include isobutyl peroxide, 2,4-dichlorobenzoyl peroxide, 3,5,5-trimethylhexanoyl peroxide, octanoyl peroxide, lauroyl peroxide, stearoyl peroxide , Succinic oxide, benzoyl peroxytoluene and benzoyl peroxide. These may be used singly or in combination of two or more.
디알킬퍼옥사이드로는, 예를 들어, α,α'-비스(t-부틸퍼옥시)디이소프로필벤젠, 디쿠밀퍼옥사이드, 2,5-디메틸-2,5-비스(t-부틸퍼옥시)헥산 및 t-부틸쿠밀퍼옥사이드를 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
The dialkyl peroxide includes, for example, α, α'-bis (t-butylperoxy) diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl- ) Hexane and t-butyl cumyl peroxide. These may be used singly or in combination of two or more.
퍼옥시디카보네이트로는, 예를 들어, 디-n-프로필퍼옥시디카보네이트, 디이소프로필퍼옥시디카보네이트, 비스(4-t-부틸시클로헥실)퍼옥시디카보네이트, 디-2-에톡시메톡시퍼옥시디카보네이트, 비스(2-에틸헥실퍼옥시)디카보네이트, 디메톡시부틸퍼옥시디카보네이트 및 비스(3-메틸-3-메톡시부틸퍼옥시)디카보네이트를 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
Examples of the peroxydicarbonate include di-n-propylperoxydicarbonate, diisopropylperoxydicarbonate, bis (4-t-butylcyclohexyl) peroxydicarbonate, di-2-ethoxymethoxyperoxy Carbonate, bis (2-ethylhexylperoxy) dicarbonate, dimethoxybutylperoxydicarbonate and bis (3-methyl-3-methoxybutylperoxy) dicarbonate. These may be used singly or in combination of two or more.
퍼옥시에스테르로는, 예를 들어, 쿠밀퍼옥시네오데카노에이트, 1,1,3,3-테트라메틸부틸퍼옥시네오데카노에이트, 1-시클로헥실-1-메틸에틸퍼옥시네오데카노에이트, t-헥실퍼옥시네오데카노에이트, t-부틸퍼옥시피발레이트, 1,1,3,3-테트라메틸부틸퍼옥시-2-에틸헥사노에이트, 2,5-디메틸-2,5-비스(2-에틸헥사노일퍼옥시)헥산, 1-시클로헥실-1-메틸에틸퍼옥시-2-에틸헥사노에이트, t-헥실퍼옥시-2-에틸헥사노네이트, t-부틸퍼옥시-2-에틸헥사노에이트, t-부틸퍼옥시이소부틸레이트, 1,1-비스(t-부틸퍼옥시)시클로헥산, t-헥실퍼옥시이소프로필모노카보네이트, t-부틸퍼옥시-3,5,5-트리메틸헥사노네이트, t-부틸퍼옥시라우레이트, 2,5-디메틸-2,5-비스(m-톨루오일퍼옥시)헥산, t-부틸퍼옥시이소프로필모노카보네이트, t-부틸퍼옥시-2-에틸헥실모노카보네이트, t-헥실퍼옥시벤조에이트, t-부틸퍼옥시아세테이트 및 비스(t-부틸퍼옥시)헥사하이드로테레프탈레이트를 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
Examples of peroxy esters include, but are not limited to, cumyl peroxyneodecanoate, 1,1,3,3-tetramethyl butyl peroxyneodecanoate, 1-cyclohexyl-1-methyl ethyl peroxyneodecano Butyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5 -Cyclohexyl-1-methylethylperoxy-2-ethylhexanoate, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy (2-ethylhexanoylperoxy) Butylperoxyisobutyrate, 1,1-bis (t-butylperoxy) cyclohexane, t-hexylperoxyisopropylmonocarbonate, t- 2,5-dimethyl-2,5-bis (m-toluoylperoxy) hexane, t-butylperoxyisopropyl monocarbonate, t-butyl peroxydicarbonate, Butyl peroxy-2-ethylhexyl monocarbonate, t-hexyl peroxy Benzoate, t-butyl peroxyacetate and bis (t-butylperoxy) hexahydroterephthalate. These may be used singly or in combination of two or more.
퍼옥시케탈로는, 예를 들어, 1,1-비스(t-헥실퍼옥시)-3,3,5-트리메틸시클로헥산, 1,1-비스(t-헥실퍼옥시)시클로헥산, 1,1-비스(t-부틸퍼옥시)-3,3,5-트리메틸시클로헥산, 1,1-(t-부틸퍼옥시)시클로도데칸 및 2,2-비스(t-부틸퍼옥시)데칸을 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
Peroxyketals include, for example, 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane, 1,1-bis (t-hexylperoxy) 1-bis (t-butylperoxy) -3,3,5-trimethylcyclohexane, 1,1- (t-butylperoxy) cyclododecane and 2,2- . These may be used singly or in combination of two or more.
하이드로퍼옥사이드로는, 예를 들어, 디이소프로필벤젠하이드로퍼옥사이드 및 쿠멘하이드로퍼옥사이드를 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
As the hydroperoxide, for example, diisopropylbenzene hydroperoxide and cumene hydroperoxide can be mentioned. These may be used singly or in combination of two or more.
실릴퍼옥사이드로는, 예를 들어, t-부틸트리메틸실릴퍼옥사이드, 비스(t-부틸)디메틸실릴퍼옥사이드, t-부틸트리비닐실릴퍼옥사이드, 비스(t-부틸)디비닐실릴퍼옥사이드, 트리스(t-부틸)비닐실릴퍼옥사이드, t-부틸트리알릴실릴퍼옥사이드, 비스(t-부틸)디알릴실릴퍼옥사이드 및 트리스(t-부틸)알릴실릴퍼옥사이드를 들 수 있다. 이들은 1종을 단독으로 또는 2종 이상을 조합하여 이용된다.
Examples of the silyl peroxide include t-butyl trimethyl silyl peroxide, bis (t-butyl) dimethyl silyl peroxide, t-butyl trivinyl silyl peroxide, bis (t- T-butylvinylsilyl peroxide, t-butyltriallylsilyl peroxide, bis (t-butyl) diallylsilyl peroxide, and tris (t-butyl) allylsilyl peroxide. These may be used singly or in combination of two or more.
(A-2)성분의 첨가량은, (A-1)성분인 오르가노폴리실록산 합계량 100질량부에 대하여, 0.1~10질량부, 바람직하게는 0.5~5질량부이다. 첨가량이, 0.1질량부 미만의 경우, 반응이 충분히 진행되지 않을 우려가 있다. 10질량부를 초과하는 경우, 원하는 경화후의 물성, 즉 충분한 내열성, 내광성이 얻어지지 않을 우려가 있다.
The amount of the component (A-2) to be added is 0.1 to 10 parts by mass, preferably 0.5 to 5 parts by mass based on 100 parts by mass of the total amount of the organopolysiloxane as the component (A-1). When the addition amount is less than 0.1 part by mass, there is a fear that the reaction does not proceed sufficiently. If it exceeds 10 parts by mass, the physical properties after desired curing, that is, sufficient heat resistance and light resistance may not be obtained.
[(B)도전성 입자][(B) conductive particle]
본 발명의 투명수지 조성물을 구성하는 (B)성분은, 평균입경 1μm 이하인 도전성 입자이다. 상기 도전성 입자는, 1차입경으로 100nm 이하의 도전성 나노입자인 것이 바람직하다. 평균입경이 1μm를 초과하면, 조대입자의 영향으로, 후에 서술하는 BLT가 5μm 이하는 되지 않고, 안정된 도전성을 얻는 것이 어렵다. 평균입경의 하한에 특별히 제한은 없다. 이러한 도전성 입자로는, 금속나노입자 등의 금속입자, 도전성 무기산화물 등을 이용할 수 있고, 단독 또는 2종 이상을 혼합하여 사용할 수 있다. 입자의 바람직한 형상으로서, 구상, 플레이크상, 침상, 무정형 등을 들 수 있으나, 이것으로 한정되지 않는다.
The component (B) constituting the transparent resin composition of the present invention is a conductive particle having an average particle diameter of 1 μm or less. It is preferable that the conductive particles are conductive nanoparticles having a diameter of 100 nm or less as primary particles. If the average particle diameter exceeds 1 탆, the BLT described later is not less than 5 탆 due to the influence of coarse particles, and it is difficult to obtain stable conductivity. The lower limit of the average particle diameter is not particularly limited. As such conductive particles, metal particles such as metal nanoparticles, conductive inorganic oxides, and the like can be used, and these conductive particles can be used alone or as a mixture of two or more. Preferable shapes of the particles include, but are not limited to, spherical, flaky, acicular, amorphous, and the like.
본 발명에 있어서의 평균입경은 체적기준입도분포에 있어서의 메디안 직경(D50)이며, D50값은, 레이저회절·산란법에 의해 얻어진 입도분포로부터 구해지는 것 외에, 주사형 전자현미경(SEM) 등을 이용하여 관측된 입자상으로부터 산출할 수 있다.
The average particle size in the present invention is the median diameter (D 50 ) in the volume-based particle size distribution, and the D 50 value is determined from the particle size distribution obtained by the laser diffraction / scattering method, and also by a scanning electron microscope ) Can be calculated from the observed particle image.
금속입자로는, 예를 들어, 금, 니켈, 구리, 은, 땜납, 팔라듐, 알루미늄, 이들의 합금, 이들의 다층화물(예를 들어, 니켈도금/금플래쉬도금물) 등을 들 수 있다. 그 중에서도, 도전성 입자에 의한 착색의 영향이 적은, 은이 바람직하다.
Examples of the metal particles include gold, nickel, copper, silver, solder, palladium, aluminum, alloys thereof, and multilayered products thereof (for example, nickel plating / gold flash plating). Among them, silver, which is less influenced by the coloring by the conductive particles, is preferable.
또한, 도전성 무기산화물로서, 무기산화물 등의 무기입자에 도전성을 부여한 것을 사용할 수 있다. 이러한 도전성을 부여한 무기입자로는, ITO(인듐-주석계 산화물), ATO(주석-안티몬계 산화물)를 들 수 있고, 또한, 산화티탄(TiO2), 질화붕소(BN), 산화아연(ZnO), 산화규소(SiO2), 산화알루미늄(Al2O3), 무기유리 등의 무기입자에 도전성을 부여(예를 들어, 금속재료를 피복)한 것 등을 들 수 있다. 그 중에서도, 수지조성물 중에 분산했을 때, 투명해지기 쉬운 ITO, ATO, 도전성을 부여한 산화규소가 바람직하다. 도전성 무기산화물의 피복층은, 도전성이 부여되어 있으면 되고, 무기산화물 등의 무기입자를 은 등의 금속재료로 피복한 것일 수도 있고, 산화주석에 안티몬을 도프, 산화인듐에 주석을 도프하는 등, 도전성의 피복층을 마련할 수도 있다. 무기입자의 형상으로는 무정형, 구상, 인편상, 침상 등을 들 수 있다.
As the conductive inorganic oxide, those having conductivity imparted to an inorganic particle such as an inorganic oxide can be used. Examples of the inorganic particles to which conductivity is imparted include ITO (indium-tin oxide) and ATO (tin-antimony oxide), and titanium oxide (TiO 2 ), boron nitride (BN), zinc oxide ), silicon oxide (SiO 2), aluminum oxide (Al 2 O 3), arms impart conductivity to inorganic particles such as glass (e.g., coated with a metallic material), and the like, would be. Among them, ITO, ATO, and silicon oxide imparting conductivity are preferred when they are dispersed in the resin composition. The covering layer of the conductive inorganic oxide may be provided with conductivity, or may be formed by coating an inorganic particle such as an inorganic oxide with a metal material such as silver. Alternatively, the covering layer of conductive inorganic oxide may be coated with a conductive material such as antimony, May be provided. Examples of the shape of the inorganic particles include amorphous, spherical, scaly, acicular, and the like.
본 발명의 투명수지 조성물에 있어서, (B)성분의 함유량은, (A)성분의 고형분(고형분 체적)을 기준으로 하여 0체적%보다 크고, 또한 0.1체적% 미만인 범위이며, 바람직하게는 0.001~0.08체적%, 보다 바람직하게는 0.01~0.05체적%의 범위이다. (B)성분의 함유량이 0.1체적% 이상이 되면, 본 발명의 투명수지 조성물의 고투명성이 손상되고, 전광선 투과율의 저하 및 헤이즈값의 상승을 초래하기 때문에, 고투명한 도전성의 경화물로 할 수 없다. 나아가, LED디바이스로부터의 광취출효율을 저하시키는 원인이 된다.
In the transparent resin composition of the present invention, the content of the component (B) is larger than 0% by volume and less than 0.1% by volume based on the solid content (solid content) of the component (A) 0.08% by volume, and more preferably 0.01 to 0.05% by volume. When the content of the component (B) is at least 0.1% by volume, high transparency of the transparent resin composition of the present invention is impaired, and the total light transmittance and the haze value are increased. none. Further, the light extraction efficiency from the LED device is deteriorated.
[(C)기타 성분][(C) Other components]
조성물의 투명성을 더욱 유지하고, 경화물의 착색, 산화열화 등의 발생을 억제하기 때문에, 2,6-디-t-부틸-4-메틸페놀 등의 종래 공지의 산화방지제를 본 발명의 투명수지 조성물에 배합할 수 있다. 또한, 광열화에 대한 저항성을 부여하기 위하여, 힌더드아민계 안정제 등의 광안정제를 본 발명의 투명수지 조성물에 배합할 수도 있다.
It is preferable to use a conventionally known antioxidant such as 2,6-di-t-butyl-4-methylphenol as the transparent resin composition of the present invention to keep the transparency of the composition further and to suppress the occurrence of coloring, . ≪ / RTI > Further, in order to impart resistance to light-induced degradation, a light stabilizer such as a hindered amine stabilizer may be incorporated into the transparent resin composition of the present invention.
본 발명의 투명수지 조성물의 강도를 향상시키고, 틱소성을 부여하기 위하여, 추가로, 흄드실리카, 나노알루미나 등의 무기질 충전제를 배합할 수도 있다. 필요에 따라, 본 발명의 투명수지 조성물에, 염료, 안료, 난연제 등을 배합할 수도 있다.
In order to improve the strength of the transparent resin composition of the present invention and to impart the tin-plasticity, an inorganic filler such as fumed silica or nano alumina may be added. If necessary, a dye, a pigment, a flame retardant and the like may be added to the transparent resin composition of the present invention.
또한, 작업성을 개선하는 목적으로 용제 등을 첨가하여 사용하는 것도 가능하다. 용제의 종류는 특별히 제한되는 것이 아니고, 경화전의 수지조성물을 용해하고, 도전성 입자를 양호하게 분산시켜, 균일한 다이본드재 혹은 접착제 등을 제공할 수 있는 용제를 사용할 수 있다. 이 용제의 배합비율은 다이본드재 등을 사용하는 작업조건, 환경, 사용시간 등에 따라 적당히 조정하면 된다. 용제는 2종 이상을 병용할 수도 있다. 이러한 용제로는, 부틸카르비톨아세테이트, 카르비톨아세테이트, 메틸에틸케톤, α-테르피네올, 및 셀로솔브아세테이트 등을 들 수 있다.
It is also possible to add a solvent or the like for the purpose of improving workability. The type of the solvent is not particularly limited, and a solvent capable of dissolving the resin composition before curing and dispersing the conductive particles well and providing a uniform die-bonding material or adhesive can be used. The compounding ratio of the solvent may be appropriately adjusted according to working conditions, environment, use time, etc. using a die bond material or the like. Two or more kinds of solvents may be used in combination. Examples of such a solvent include butyl carbitol acetate, carbitol acetate, methyl ethyl ketone,? -Terpineol, and cellosolve acetate.
또한, 본 발명의 투명수지 조성물은, 그 접착성을 향상시키기 위한 접착부여제를 함유할 수도 있다. 이 접착부여제로는, 실란커플링제나 그 가수분해축합물 등이 예시된다. 실란커플링제로는, 에폭시기함유 실란커플링제, (메트)아크릴기함유 실란커플링제, 이소시아네이트기함유 실란커플링제, 이소시아누레이트기함유 실란커플링제, 아미노기함유 실란커플링제, 메르캅토기함유 실란커플링제 등 공지의 것이 예시되고, (A)성분의 합계 100질량부에 대하여 바람직하게는 0.1~20질량부, 보다 바람직하게는 0.3~10질량부 이용할 수 있다.
In addition, the transparent resin composition of the present invention may contain an adhesion-imparting agent for improving the adhesiveness. Examples of the adhesive agent include silane coupling agents and hydrolyzed condensates thereof. Examples of the silane coupling agent include epoxy group-containing silane coupling agents, (meth) acrylate group-containing silane coupling agents, isocyanate group-containing silane coupling agents, isocyanurate group-containing silane coupling agents, amino group-containing silane coupling agents, Coupling agents, and the like. The amount is preferably 0.1 to 20 parts by mass, more preferably 0.3 to 10 parts by mass based on 100 parts by mass of the total amount of the component (A).
본 발명의 투명수지 조성물은, 상기 각 성분을, 공지의 혼합방법, 예를 들어, 믹서, 롤 등을 이용하여 혼합함으로써 제조할 수 있다. 또한, 본 발명의 투명수지 조성물은, 회전점도계, 예를 들어, E형 점도계를 이용하여 25℃에서 측정한 점도가 바람직하게는 10~1,000,000mPa·s, 보다 바람직하게는 100~1,000,000mPa·s, 특히 바람직하게는 100~20,000mPa·s이다.
The transparent resin composition of the present invention can be produced by mixing each of the above components by a known mixing method, for example, using a mixer, a roll, or the like. The viscosity of the transparent resin composition of the present invention measured at 25 캜 using a rotational viscometer, for example, an E-type viscometer is preferably 10 to 1,000,000 mPa · s, more preferably 100 to 1,000,000 mPa · s , Particularly preferably 100 to 20,000 mPa · s.
본 발명의 투명수지 조성물은, 공지의 경화조건하에서 공지의 경화방법에 의해 경화시킬 수 있다. 구체적으로는, 통상 80~200℃, 바람직하게는 100~160℃에서 가열함으로써, 이 조성물을 경화시킬 수 있다. 가열시간은, 0.5분~5시간 정도, 특히 1분~3시간 정도이면 된다. 작업조건, 생산성, 발광소자 및 광체내열성과의 밸런스로부터 적당히 선정할 수 있다.
The transparent resin composition of the present invention can be cured by a known curing method under known curing conditions. Concretely, the composition can be cured by heating at 80 to 200 ° C, preferably 100 to 160 ° C. The heating time may be about 0.5 minutes to 5 hours, particularly about 1 minute to 3 hours. It can be suitably selected from the balance between work conditions, productivity, light emitting element, and heat resistance of the optical body.
본 발명의 투명수지 조성물은, 수직형 LED칩을 패키지에 고정하기 위하여 호적하게 이용할 수 있다. 또한, 기타 발광 다이오드(LED), 유기전계 발광소자(유기EL), 레이저다이오드, 및 LED어레이 등의 광반도체 소자에도 호적하게 이용할 수 있다.
The transparent resin composition of the present invention can be suitably used for fixing a vertical type LED chip to a package. It can also be suitably used for optical semiconductor devices such as other light emitting diodes (LEDs), organic electroluminescent devices (organic EL), laser diodes, and LED arrays.
나아가 본 발명에서는, 상기 본 발명의 투명수지 조성물로 이루어진 접착제를 제공한다. 또한, 상기 본 발명의 투명수지 조성물로 이루어지고, 반도체소자를 배선판에 도전접속하기 위하여 사용할 수 있는 다이본드재를 제공한다.
Further, the present invention provides an adhesive made of the transparent resin composition of the present invention. Further, there is provided a die bond material which is made of the transparent resin composition of the present invention and can be used for electrically connecting a semiconductor element to a wiring board.
본 발명의 투명수지 조성물은, 고투명이며, 또한 접착강도 및 작업성이 우수하고, 내열성 및 내광성이 우수한 경화물을 부여할 수 있다. 따라서, 상기 투명수지 조성물로 이루어진 접착제 및 다이본드재이면, LED칩을 배선판에 탑재하기 위한 접착제로서 광의 취출효율을 손상시키지 않고 호적하게 이용할 수 있다.
INDUSTRIAL APPLICABILITY The transparent resin composition of the present invention can give a cured product which is highly transparent, excellent in bonding strength and workability, and excellent in heat resistance and light resistance. Therefore, the adhesive and the die bond material made of the transparent resin composition can be suitably used as an adhesive for mounting the LED chip on the wiring board without deteriorating the light extraction efficiency.
나아가, 본 발명의 다이본드재를 경화하여 얻어지는 경화물은 BLT가 5μm 이하인 경우에 있어서 사용되는 것이 바람직하다. BLT는 도전접속을 행하는 부재간의 거리를 의미하고, 도전성 경화물층의 두께라고 이해할 수 있다. BLT가 5μm 이하이면, (B)성분의 도전성 입자(도전성 미립자)가 극미량만 첨가되는 경우에도, 부재간을 유효하게 전기적으로 접속할 수 있다. 상기 도전성 입자의 함유량이 적으면, 보다 고투명한 경화물을 얻을 수 있고, 또한, 경제적으로도 유용하다. BLT는 작은 값을 취하는 편이 전극간 거리가 좁아지므로 바람직하다. 나아가, BLT는 작은 값을 취하는 편이 열저항이 저감되는 점에서, 광반도체 소자의 발광에 의해 발해진 열의 방열에도 유리하다.
Further, the cured product obtained by curing the die bonding material of the present invention is preferably used when the BLT is 5 탆 or less. BLT means the distance between the members for conducting connection and can be understood as the thickness of the conductive cured layer. When the BLT is not more than 5 mu m, even when only a very small amount of the conductive particles (conductive fine particles) of the component (B) is added, the members can be electrically connected effectively. When the content of the conductive particles is small, a more transparent cured product can be obtained and it is economically advantageous. The smaller value of BLT is preferable because the distance between the electrodes becomes narrower. Furthermore, since the BLT has a small value, the heat resistance is reduced, which is also advantageous for heat dissipation of heat generated by the light emission of the optical semiconductor element.
다이본드재를 도포하는 방법은 특별히 제한되지 않고, 예를 들어, 스핀코팅, 인쇄, 및 압축성형 등을 들 수 있다. 다이본드재의 두께는, 적당히 선택하면 되고, 통상 5~50μm, 특히 10~30μm이다. 예를 들어, 디스펜스장치를 이용하여 23℃의 온도, 0.5~5kgf/cm2의 압력으로 토출함으로써 용이하게 도포를 할 수 있다. 또한, 스탬핑 장치를 이용함으로써, 소정량의 다이본드재를 기판에 전사하는 것으로도 용이하게 할 수 있다.
The method of applying the die bond material is not particularly limited, and examples thereof include spin coating, printing, and compression molding. The thickness of the die bond material may be suitably selected and is usually 5 to 50 탆, particularly 10 to 30 탆. For example, it can be easily applied by discharging at a temperature of 23 캜 and a pressure of 0.5 to 5 kgf / cm 2 using a dispensing apparatus. In addition, by using the stamping device, it is also possible to easily transfer a predetermined amount of the die bonding material to the substrate.
광반도체 소자의 탑재방법은 특별히 제한되지 않고, 예를 들어, 다이본더를 들 수 있다. 다이본드재의 두께를 결정하는 요소는, 상기 서술한 다이본드재의 점도에 더하여, 광반도체 소자의 압착하중, 압착시간, 압착온도를 들 수 있다. 이들 조건은, 광반도체 소자의 외형형상, 목적으로 하는 다이본드재 두께에 따라 적당히 선택하면 되고, 압착하중은 일반적으로 1gf 이상 1kgf 이하이다. 바람직하게는 10gf 이상 100gf 이하이다. 1gf 이상의 압착하중이면, 다이본드재를 충분히 압착할 수 있다. 또한 1kgf 이하의 압착하중을 이용하면, 광반도체 소자 표면의 발광층에 데미지를 주는 일이 없다. 압착시간은 공정의 생산성과 균형을 맞추어 적당히 선택하면 되고, 일반적으로 0msec 초과 1sec 이하이다. 바람직하게는 1msec 이상 30msec이다. 1sec 이하이면 생산성의 점에서 바람직하다. 압착온도는 특별히 제한은 없고, 다이본드재의 사용온도범위에 따르면 되는데, 일반적으로 15℃ 이상 100℃ 이하이면 바람직하다. 다이본더의 압착스테이지에 가온설비가 없는 경우는 실온 부근에서의 온도대에서 사용하면 된다. 15℃ 이상이면, 다이본드재의 점도가 지나치게 높아지지 않기 때문에 충분히 압착할 수 있다. 100℃ 이하이면, 다이본드재의 경화가 시작될 일이 없으므로, 목적으로 하는 다이본드재의 두께에 도달할 수 있다.
The mounting method of the optical semiconductor element is not particularly limited, and for example, a die bonder can be mentioned. The factors determining the thickness of the die bond material include, in addition to the viscosity of the die bond material described above, the compressive load, the compression time, and the compression temperature of the optical semiconductor element. These conditions can be appropriately selected in accordance with the outer shape of the optical semiconductor element and the intended thickness of the die bond material, and the compression load is generally 1 gf or more and 1 kgf or less. And preferably 10 gf or more and 100 gf or less. When the bonding load is 1 gf or more, the die bonding material can be sufficiently pressed. Further, when a compression load of 1 kgf or less is used, there is no damage to the light emitting layer on the surface of the optical semiconductor element. The compression time can be appropriately selected in accordance with the productivity of the process, and is generally 0 msec to 1 sec. It is preferably 1 msec or more and 30 msec. If it is 1 sec or less, it is preferable from the viewpoint of productivity. The compression temperature is not particularly limited and may be determined according to the use temperature range of the die bond material. If there is no heating facility on the compression bonding stage of the die bonder, it may be used in a temperature zone near room temperature. If it is 15 deg. C or more, the viscosity of the die-bonding material is not excessively high, so that it can be sufficiently pressed. If it is 100 DEG C or less, the curing of the die bonding material will not be started, and the thickness of the intended die bonding material can be reached.
나아가 본 발명에서는, 상기 본 발명의 투명수지 조성물을 이용하여, BLT를 5μm 이하로 하여 광반도체 소자와 기판을 도전접속하는 것을 특징으로 하는 도전접속방법을 제공한다. 이러한 도전접속방법이면, 광반도체 소자와 기판의 도전접속을 확실히 달성할 수 있다.
Further, in the present invention, there is provided a conductive connection method characterized in that the transparent resin composition of the present invention is used so that the optical semiconductor element and the substrate are electrically connected with BLT of 5 μm or less. With such a conductive connection method, the conductive connection between the optical semiconductor element and the substrate can be reliably achieved.
나아가 본 발명에서는, 상기 본 발명의 도전접속방법에 의해 광반도체 소자와 기판이 도전접속된 것을 특징으로 하는 광반도체 장치를 제공한다. 본 발명의 광반도체 장치는, 본 발명의 도전접속방법에 의해 얻어진 것이므로, 광취출효율이 높고, 내열성 및 내광성을 갖는 것이 되며, 도전접속이 확실히 달성된 것이 된다.
Further, in the present invention, there is provided an optical semiconductor device characterized in that the optical semiconductor element and the substrate are electrically connected by the above-mentioned conductive connection method of the present invention. Since the optical semiconductor device of the present invention is obtained by the conductive connection method of the present invention, it has high light extraction efficiency, has heat resistance and light resistance, and can achieve the conductive connection surely.
이하, 본 발명의 광반도체 장치의 일태양에 대하여 도면을 참조하여 설명한다. 도 1은, 본 발명의 투명수지 조성물을 이용하여 광반도체 소자와 기판이 도전접속된 광반도체 장치의 일례를 나타낸 단면도이다. 이 광반도체 장치는, 광반도체 소자(4)의 하부전극과 제1 리드(2)를 다이본드재(1)에 의해, 전기적으로 접속하고, 광반도체 소자(4)의 상부전극과 제2 리드(3)를 와이어(5)에 의해 전기적으로 접속하고, 광반도체 소자(4)를 봉지재(6)로 봉지한 것이다.
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an optical semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. 1 is a cross-sectional view showing an example of an optical semiconductor device in which a photosemiconductor element and a substrate are electrically connected to each other using the transparent resin composition of the present invention. In this optical semiconductor device, the lower electrode of the
도 1의 광반도체 장치의 제조방법(본 발명의 도전접속방법)으로는, 이하의 방법을 예시할 수 있다.As the method of manufacturing the optical semiconductor device of Fig. 1 (the conductive connection method of the present invention), the following methods can be exemplified.
패키지기판 상의 제1 리드(2)에, 다이본드재(1)를 정량전사하고, 그 위에 광반도체 소자(4)를 탑재한다. 이어서 다이본드재(1)를 가열경화시키고, 광반도체 소자(4)의 하부전극과 제1 리드(2)를 전기적으로 접속한다. 이때, 본 발명의 도전접속방법에서는, BLT를 5μm 이하로 한다. BLT를 5μm 이하로 하는 방법으로는, 예를 들어, 조성물의 점도를 조정하는 방법, 조성물의 기판에 대한 도포량을 조절하는 방법, 광반도체 소자를 기판에 다이본드할 때의 압력을 제어하는 방법 등을 들 수 있다. 이어서, 광반도체 소자(4)가 탑재된 패키지기판을, 광반도체 소자(4)의 상부전극과 제2 리드(3)에 대하여 와이어(5)를 이용하여 전기적으로 접속하고, 광반도체 소자(4)가 탑재된 패키지기판을 얻는다. 이어서, 봉지재(6)를 정량도포하고, 봉지재(6)의 가열경화를 행한다.
The die bonding material 1 is quantitatively transferred to the
본 발명의 투명수지 조성물을 경화하여 얻어지는 경화물의 BLT가 5μm를 초과하면, (B)성분의 도전성 입자에 의한 전기적인 접속효과를 잃게 되어, 도전성의 경화물로서 이용할 수 없고, 반도체소자와 기판을 도전접속할 수 없다. 이 경우, (B)성분의 함유량을 (A)성분의 고형분을 기준으로 하여 0.1체적% 이상으로 하면 도전성은 회복되나, 전광선 투과율의 저하, 및 헤이즈값의 상승을 초래하므로, 고투명한 경화물로 할 수 없다. 나아가, 열저항의 증대의 원인이 되므로, 바람직하지 않다.
When the BLT of the cured product obtained by curing the transparent resin composition of the present invention exceeds 5 m, the electrical connection effect by the conductive particles of the component (B) is lost and can not be used as a conductive hardened material. Conductive connection is not possible. In this case, when the content of the component (B) is 0.1% by volume or more based on the solid content of the component (A), the conductivity is recovered, but the total light transmittance is lowered and the haze value is increased. Can not. Further, it is not preferable because it causes an increase in heat resistance.
실시예
Example
이하, 실시예와 비교예를 나타내고, 본 발명을 구체적으로 설명하나, 본 발명은 하기의 실시예로 한정되는 것은 아니다.(하기 식에 있어서, Me는 메틸기를 나타낸다.)
EXAMPLES Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples. However, the present invention is not limited to the following Examples. (In the following formulas, Me represents a methyl group.)
[조제예 1~4][Preparation Examples 1 to 4]
하기 성분을 교반, 혼합하여, 표 1에 나타낸 조성의 실리콘 조성물을 조제하였다.
The following components were mixed and stirred to prepare a silicone composition having the composition shown in Table 1.
[(A)성분][Component (A)] [
[(A-1)성분][Component (A-1)] [
(a)하기 식에 나타낸, MA단위, M단위, Q단위가, MA:M:Q=1:4:6의 비율로 포함되고, 분자량이 폴리스티렌 환산의 중량평균 분자량으로, 5000인 오르가노폴리실록산.(a) an organopolysiloxane having a weight average molecular weight of 5,000 in terms of polystyrene and containing MA, M and Q units in a ratio of MA: M: Q = 1: 4: .
[화학식 21][Chemical Formula 21]
[화학식 22][Chemical Formula 22]
[화학식 23](23)
(b)하기 식에 나타낸 오르가노폴리실록산.(하기 식에 있어서, Me는 메틸기를 나타낸다.)(b) an organopolysiloxane represented by the following formula: (In the following formula, Me represents a methyl group.)
[화학식 24]≪ EMI ID =
(c)하기 식에 나타낸, MA-D단위, D단위, T단위가, MA-D:D:T=2:6:7의 비율로 포함되고, 분자량이 폴리스티렌 환산의 중량평균 분자량으로, 3500인 오르가노폴리실록산.(하기 식에 있어서, Me는 메틸기를 나타낸다.)(c) the MA-D unit, the D unit, and the T unit represented by the following formulas are contained in a ratio of MA-D: D: T = 2: 6: 7, the molecular weight is a weight average molecular weight in terms of polystyrene, (In the following formula, Me represents a methyl group.)
[화학식 25](25)
[화학식 26](26)
[화학식 27](27)
(d)하기 식에 나타낸 오르가노폴리실록산.(하기 식에 있어서, Me는 메틸기를 나타낸다.)(d) an organopolysiloxane represented by the following formula: (In the following formula, Me represents a methyl group.)
[화학식 28](28)
[(A-2)성분][Component (A-2)] [
(A-2)1,1-Di(t-butylperoxy)cyclohexane(상품명: 퍼헥사C, 니찌유주식회사제)
(A-2) 1,1-Di (t-butylperoxy) cyclohexane (trade name: Perhexa C,
조제예 1~4의 각 성분의 배합량을 표 1에 나타낸다.The blending amounts of the respective components of Preparation Examples 1 to 4 are shown in Table 1.
[표 1][Table 1]
(비교조제예 1)(Comparative Preparation Example 1)
하기 성분을 교반, 혼합하여 실리콘 조성물(V)을 조제하였다.
The following components were stirred and mixed to prepare a silicone composition (V).
[(A-1)성분][Component (A-1)] [
((e)성분)평균조성식: MViD300MVi의 실리콘오일: 35질량부(Component (e)) Average composition formula: M Vi D 300 M Vi silicone oil: 35 parts by mass
((f)성분)M단위와 MVi단위와 Q단위로부터 구성되고, MVi단위에 대한 M단위의 몰비가 6.25이며, Q단위에 대한 M단위와 MVi단위의 합계의 몰비가 0.8인 실리콘레진: 65질량부(component (f)) having a molar ratio of M units of M units to M Vi units of 6.25 and a molar ratio of the sum of M units and M Vi units to Q units of 0.8, consisting of M units, M Vi units and Q units, Resin: 65 parts by mass
또한, 상기의 (e)성분, (f)성분에 있어서, 각 성분의 평균조성을 나타낸 기호는 이하와 같은 단위를 나타낸다.In the above components (e) and (f), the symbol representing the average composition of each component represents the following units.
M: (CH3)3SiO1 /2 M: (CH 3) 3 SiO 1/2
MVi: (CH2=CH)(CH3)2SiO1 /2 M Vi: (CH 2 = CH ) (CH 3) 2 SiO 1/2
D: (CH3)2SiO2 /2 D: (CH 3) 2 SiO 2/2
Q: SiO4 /2
Q: SiO 4/2
[(A-2)성분][Component (A-2)] [
(A-2)1,1-Di(t-butylperoxy)cyclohexane(상품명: 퍼헥사C, 니찌유주식회사제): 2질량부
(A-2) 2 parts by mass of 1,1-Di (t-butylperoxy) cyclohexane (trade name: Perhexa C, manufactured by Nichiyu Corporation)
[실시예 1~6][Examples 1 to 6]
(실시예 1)(Example 1)
(A)성분으로서 조제예 1에서 얻어진 실리콘 조성물(I) 100질량부, (B)성분의 도전성 입자로서 평균입경(1차입자의 평균입자경) 0.02μm의 Sb도프SnO2분말(ATO, 제품명 SN-100P, 이시하라산업사제) 0.1질량부(실리콘 조성물(I)의 고형분을 기준으로 하여 0.015체적%), 첨가재(添加材)로서, 연무상 실리카(제품명 레오시롤) DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by mass of the silicone composition (I) obtained in Preparation Example 1 as the component (A), Sb-doped SnO 2 powder (ATO, product name SN- 0.10 parts by mass (based on the solid content of the silicone composition (I), 0.015% by volume) as an additive, silicone oil (product name: Leishilol) DM-30S, manufactured by Tokuyama Co., 5 parts by mass were mixed and kneaded again with a three-roll mill, followed by vacuum degassing to prepare a paste-like composition.
(실시예 2)(Example 2)
(A)성분으로서 조제예 2에서 얻어진 실리콘 조성물(II) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.02μm의 Sb도프SnO2분말(ATO, 제품명 SN-100P, 이시하라산업사제) 0.1질량부(실리콘 조성물(II)의 고형분을 기준으로 하여 0.015체적%), 첨가재로서, 연무상 실리카(제품명 레오시롤 DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by weight of the silicone composition (II) obtained in Preparation Example 2 as the component (A), 0.1 part by weight of Sb-doped SnO 2 powder (ATO, product name SN-100P, manufactured by Ishihara Industries Co., Ltd.) having an average particle diameter of 0.02 μm (0.015% by volume based on the solid content of the silicone composition (II)) and 5 parts by mass of a plasticizer (trade name: LeoSilol DM-30S, manufactured by Tokuyama Co.) as an additive were mixed and further kneaded And subjected to vacuum degassing to prepare a paste-like composition.
(실시예 3)(Example 3)
(A)성분으로서 조제예 3에서 얻어진 실리콘 조성물(III) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.02μm의 Sb도프SnO2분말(ATO, 제품명 SN-100P, 이시하라산업사제) 0.1질량부(실리콘 조성물(III)의 고형분을 기준으로 하여 0.015체적%), 첨가재로서, 연무상 실리카(제품명 레오시롤 DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하고, 희석제로서 자일렌을 10질량부 첨가하여 잘 혼합해서 페이스트상의 조성물을 조제하였다.
100 parts by weight of the silicone composition (III) obtained in Preparation Example 3 as the component (A), 0.1 parts by weight of Sb-doped SnO 2 powder (ATO, product name SN-100P, manufactured by Ishihara Industries Co., Ltd.) having an average particle diameter of 0.02 μm (0.015% by volume based on the solid content of the silicone composition (III)) and 5 parts by mass of a plasticizer (trade name: LeoSilol DM-30S, manufactured by Tokuyama Co., Ltd.) as an additive were mixed and further kneaded , Subjected to vacuum degassing, 10 parts by mass of xylene as a diluent was added and mixed well to prepare a paste-like composition.
(실시예 4)(Example 4)
(A)성분으로서 조제예 1에서 얻어진 실리콘 조성물(I) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.35μm의 Sb도프SnO2피복 실리카분말(제품명 ES-650E, 비중 4.1, 티탄공업사제) 0.1질량부(실리콘 조성물(I)의 고형분을 기준으로 하여 0.024체적%), 첨가재로서, 연무상 실리카(제품명 레오시롤 DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by mass of the silicone composition (I) obtained in Preparation Example 1 as the component (A), Sb-doped SnO 2 -coated silica powder with an average particle diameter of 0.35 μm (ES-650E, specific gravity 4.1, , 0.1 part by mass (0.024% by volume based on the solid content of the silicone composition (I)) and 5 parts by mass of a plasticizer (product name: LeoSilol DM-30S, manufactured by Tokuyama Co., Ltd.) Kneaded with a roll, and defoamed under reduced pressure to prepare a paste-like composition.
(실시예 5)(Example 5)
(A)성분으로서 조제예 1에서 얻어진 실리콘 조성물(I) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.02μm의 Sb도프SnO2분말(ATO, 제품명 SN-100P, 이시하라산업사제) 0.01질량부(실리콘 조성물(I)의 고형분을 기준으로 하여 0.0015체적%), 첨가재로서, 연무상 실리카(제품명 레오시롤 DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by weight of the silicone composition (I) obtained in Preparation Example 1 as the component (A), 0.01 part by weight of Sb-doped SnO 2 powder (ATO, product name SN-100P, manufactured by Ishihara Industries Co., Ltd.) having an average particle diameter of 0.02 μm (0.0015% by volume based on the solid content of the silicone composition (I)) and 5 parts by mass of a plasticizer (trade name: LeoSilol DM-30S, manufactured by Tokuyama Corporation) as an additive were mixed and further kneaded And subjected to vacuum degassing to prepare a paste-like composition.
(실시예 6)(Example 6)
(A)성분으로서 조제예 4에서 얻어진 실리콘 조성물(IV) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.05μm의 은분말(제품명 실베스트 C-34, 비중 10.5, 토쿠리키과학연구소사제) 0.01질량부(실리콘 조성물(IV)의 고형분을 기준으로 하여 0.001체적%), 용제로서 자일렌 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by mass of the silicone composition (IV) obtained in Preparation Example 4 as the component (A), 0.1 part by mass of silver powder having an average particle size of 0.05 占 퐉 (trade name: Silvest C-34, specific gravity 10.5, manufactured by Tokuriki Scientific Research Institute ) (0.001% by volume based on the solid content of the silicone composition (IV)) and 5 parts by mass of xylene as a solvent were mixed and kneaded again with a three-roll mill, followed by vacuum degassing to prepare a paste-like composition.
[비교예 1~4][Comparative Examples 1 to 4]
(비교예 1)(Comparative Example 1)
(A)성분으로서 조제예 1에서 얻어진 실리콘 조성물(I) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.02μm의 Sb도프SnO2분말(ATO, 제품명 SN-100P, 이시하라산업사제) 1.0질량부(실리콘 조성물(I)의 고형분을 기준으로 하여 0.15체적%), 첨가재로서, 연무상 실리카(제품명 레오시롤 DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by weight of the silicone composition (I) obtained in Preparation Example 1 as the component (A), Sb-doped SnO 2 powder (ATO, product name SN-100P manufactured by Ishihara Industries Co., Ltd.) having an average particle diameter of 0.02 μm (0.15% by volume based on the solids content of the silicone composition (I)) and 5 parts by mass of a plasticizer (trade name: LeoSilol DM-30S, manufactured by Tokuyama Corporation) as an additive were mixed and further kneaded And subjected to vacuum degassing to prepare a paste-like composition.
(비교예 2)(Comparative Example 2)
(A)성분으로서 조제예 1에서 얻어진 실리콘 조성물(I) 100질량부, (B)성분의 도전성 입자로서 평균입경 6.9μm의 은분말(제품명 실베스트 TCG-7, 비중 10.5, 토쿠리키과학연구소사제) 0.1질량부(실리콘 조성물(I)의 고형분을 기준으로 하여 0.001체적%), 첨가재로서, 연무상 실리카(제품명 레오시롤 DM-30S, 토쿠야마사제) 5질량부를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by mass of the silicone composition (I) obtained in Preparation Example 1 as the component (A), 0.1 part by mass of silver powder having an average particle size of 6.9 占 퐉 (trade name: Best Best TCG-7, specific gravity 10.5, manufactured by Tokuriki Scientific Research Institute ) (0.1 part by mass based on the solid content of the silicone composition (I)), and 5 parts by mass of a plasticizer (trade name: LeoSilol DM-30S, manufactured by Tokuyama Corporation) as an additive. Kneaded, and subjected to vacuum degassing to prepare a paste-like composition.
(비교예 3)(Comparative Example 3)
(A)성분으로서 비교조제예 1에서 얻어진 실리콘 조성물(V) 100질량부, (B)성분의 도전성 입자로서 평균입경 0.02μm의 Sb도프SnO2분말(ATO, 제품명 SN-100P, 이시하라산업사제) 0.1질량부(실리콘 조성물(V)의 고형분을 기준으로 하여 0.015체적%)를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by weight of the silicone composition (V) obtained in Comparative Preparation Example 1 as the component (A), Sb-doped SnO 2 powder (ATO, product name SN-100P, manufactured by Ishihara Industries Co., Ltd.) having an average particle diameter of 0.02 μm as the conductive particles of the component (B) And 0.1 part by mass (0.015% by volume based on the solid content of the silicone composition (V)) were mixed, kneaded again with a three-roll mill, and subjected to vacuum degassing to prepare a paste-like composition.
(비교예 4)(Comparative Example 4)
(A)성분으로서 에폭시 조성물(VI)(에폭시다이본드재, 제품명 DX-20C, 헨켈사제) 100질량부, (B)성분의 도전성 입자로서 평균입경 6.9μm의 은분말(제품명 실베스트 TCG-7, 비중 10.5, 토쿠리키과학연구소사제) 310질량부(에폭시 조성물(VI)의 고형분을 기준으로 하여 29.5체적%)를 혼합하고, 다시 3본롤로 혼련처리를 행하고, 감압탈포하여 페이스트상의 조성물을 조제하였다.
100 parts by weight of an epoxy composition (VI) (epoxy dybond material, product name: DX-20C, manufactured by Henkel Co., Ltd.) as the component (A), silver powder having an average particle diameter of 6.9 , A specific gravity of 10.5, manufactured by Tokuriki Scientific Research Institute) (mixing ratio: 29.5% by volume based on the solid content of the epoxy composition (VI)) was mixed again with a three-roll mill and subjected to vacuum degassing to prepare a paste- Respectively.
실시예 1~6, 비교예 1~4의 조성물에 대하여, 이하의 모든 특성을 측정하였다. 결과를 표 2, 표 3에 나타낸다.
For the compositions of Examples 1 to 6 and Comparative Examples 1 to 4, all the following characteristics were measured. The results are shown in Tables 2 and 3.
[헤이즈 측정, 및 전광선 투과율의 측정][Measurement of haze and measurement of total light transmittance]
일본전색공업사제 헤이즈미터 NDH-5000SP를 이용하여 헤이즈 측정, 및 전광선 투과율의 측정을 행하였다. 상기의 조건으로 혼합한 시료를, 2mm 두께의 셀에 흘리고, 소정의 조건(실시예 1~6, 비교예 1~3은 150℃, 1시간, 비교예 4는 170℃, 1시간)으로 가열경화를 행하고, 표면이 청정한 2mm 두께의 경화물을 얻고, 이것을 측정부에 세트하여 측정하였다. 3번의 측정에 있어서의 헤이즈값, 전광선 투과율의 평균값을 구하였다.
Haze measurement and total light transmittance were measured using a haze meter NDH-5000SP manufactured by Nihon Furukawa Co., Ltd. The sample mixed under the above conditions was passed through a cell having a thickness of 2 mm and heated under predetermined conditions (Examples 1 to 6 and Comparative Examples 1 to 3 at 150 占 폚 for 1 hour and Comparative Example 4 at 170 占 폚 for 1 hour) Curing was carried out to obtain a cured product having a clean surface and a thickness of 2 mm, and the cured product was set on the measuring part and measured. The haze value and the average value of the total light transmittance in the three measurements were obtained.
[점도의 측정][Measurement of viscosity]
실시예 및 비교예에 나타낸 조성물로 이루어진 각 다이본드재의 점도를 E형 점도계(토우키산업주식회사제 RE80U)를 이용하여 25℃, 50rpm으로 측정하였다.
The viscosity of each die-bonding material composed of the compositions shown in Examples and Comparative Examples was measured at 25 캜 and 50 rpm using an E-type viscometer (RE80U, manufactured by TOKI INDUSTRIAL CO., LTD.).
[광반도체 패키지의 제작][Fabrication of optical semiconductor package]
LED용 패키지기판으로서, 광반도체 소자를 재치하는 오목부를 갖고, 그 바닥부에 은도금된 제1 리드와 제2 리드가 마련된 LED용 패키지기판[SMD5050(I-CHIUN PRECISION INDUSTRY CO.,사제, 수지부 PPA(폴리프탈아미드))], 광반도체 소자로서, 주발광 피크가 450nm의 수직형 LED(SemiLEDs사제 EV-B35A)를, 각각 준비하였다.
As a package substrate for an LED, a package substrate for LED (SMD5050 (manufactured by I-CHIUN PRECISION INDUSTRY CO., LTD., Manufactured by I-CHI PRECISION INDUSTRY CO., LTD.) Having a concave portion for mounting the optical semiconductor element and having a first lead and a second lead, PPA (polyphthalamide)]) and a vertical LED having a main emission peak of 450 nm (EV-B35A manufactured by SemiLEDs) were prepared as optical semiconductor elements, respectively.
다이본더(ASM사제 AD-830)를 이용하여, 패키지기판의 은도금된 제1 리드에, 실시예 및 비교예에 나타낸 각 다이본드재를 스탬핑에 의해 정량전사하고, 그 위에 광반도체 소자를 탑재하였다. 이때의 광반도체 소자의 탑재조건은, 압착시간 13msec, 압착하중 60gf이며, 가온장치를 이용하지 않고 실온 25℃의 환경에서 행하였다. 이어서 패키지기판을 오븐에 투입하여 각 다이본드재를 가열경화시키고(실시예 1~6, 비교예 1~3은 150℃ 1시간, 비교예 4는 170℃ 1시간), 광반도체 소자의 하부전극과 제1 리드를 전기적으로 접속하였다. 이어서 와이어본더를 이용하여, 이 광반도체 소자가 탑재된 이 LED용 패키지기판을, 광반도체 소자의 상부전극과 제2 리드에 대하여 금와이어(다나카전자공업사제 FA 25μm)를 이용하여 전기적으로 접속하고, 광반도체 소자가 탑재된 LED용 패키지기판 각 1매(패키지수로 하여 120개)를 얻었다.
Using the die bonder (AD-830 manufactured by ASM Corporation), the die bonding materials shown in the examples and the comparative examples were quantitatively transferred to the first silver-plated lead of the package substrate by stamping, and the optical semiconductor element was mounted thereon . The mounting condition of the optical semiconductor element at this time was a compression time of 13 msec and a compression load of 60 gf, and was performed in an environment of a room temperature of 25 캜 without using a heating device. Subsequently, the package substrate was placed in an oven to heat-cure the respective die bonding materials (Examples 1 to 6, Comparative Examples 1 to 3 at 150 ° C for 1 hour and Comparative Example 4 at 170 ° C for 1 hour) And the first lead are electrically connected. Subsequently, the LED package substrate on which the optical semiconductor element was mounted was electrically connected to the upper electrode of the optical semiconductor element and the second lead using a gold wire (FA 25 μm manufactured by Tanaka Electronics Co., Ltd.) using a wire bonder , And one each of LED package substrates on which optical semiconductor elements were mounted (120 packages as the number of packages).
이어서, 상기에서 얻어진 광반도체 소자가 탑재된 LED용 패키지기판에 대하여, 디스펜스장치(무사시 엔지니어링제, SuperΣ CM II)를 이용하여, 실리콘봉지재(제품명 KER2500, 신에쯔화학공업주식회사제)를 정량도포하고, 150℃, 4시간으로 봉지재의 가열경화를 행하였다.
Subsequently, a silicone sealing material (product name: KER2500, manufactured by Shin-Etsu Chemical Co., Ltd.) was quantitatively measured on a package substrate for LED on which the optical semiconductor element thus obtained was mounted using a dispenser (SuperΣ CM II manufactured by Musashi Engineering Co., Followed by heating and curing of the sealing material at 150 占 폚 for 4 hours.
상기와 같이 하여, 다이본드재의 상이한 광반도체 패키지를 제작하고, 이하의 시험에 이용하였다.
As described above, different optical semiconductor packages of the die bond material were prepared and used in the following tests.
[점등수의 확인][Confirmation of lighting number]
상기의 방법으로 얻어진 봉지재가 충전된 광반도체 패키지 전체수(120개)의 점등검사를 행하고(인가전류 IF=20mA), 점등한 광반도체 장치의 수를 세었다.
The number of the optical semiconductor devices that were turned on was counted by performing the lighting test of the total number (120) of the optical semiconductor packages filled with the encapsulating material obtained by the above method (applied current IF = 20 mA).
[BLT의 측정][Measurement of BLT]
상기의 방법으로 얻어진 봉지재가 충전된 광반도체 패키지를, 시판의 실온 경화형 에폭시 수지로 매포하고, 광반도체 소자의 직하가 관찰되도록 절단, 연마하여, BLT가 관찰가능한 시료를 제작하였다. 얻어진 시료를 레이저현미경(주식회사키엔스제 VK-8700)으로 관찰하여, 광반도체 소자-기판간의 거리를 3점 측정하고, 평균값을 구하였다.
The optical semiconductor package packed with the encapsulating material obtained by the above method was mapped with a commercially available room temperature curable epoxy resin and cut and polished so that the direct underneath of the optical semiconductor element was observed to prepare a sample observable for BLT. The obtained sample was observed with a laser microscope (VK-8700, manufactured by Keyens Co., Ltd.), and the distance between the optical semiconductor element and the substrate was measured at three points, and an average value was obtained.
[전체 광속의 측정][Measurement of total luminous flux]
상기의 방법으로 얻어진 봉지재가 충전된 광반도체 패키지 10개를, 전체 광속측정시스템 HM-9100(오츠카전자(주)제)을 이용하고, 전체 광속값(Lm)을 측정하여(인가전류 IF=350mA), 평균값을 구하였다.
The total optical flux value Lm of the optical semiconductor package 10 packed with the encapsulation material obtained by the above method was measured using an entire luminous flux measuring system HM-9100 (manufactured by Otsuka Electronics Co., Ltd.) ), And the average value was obtained.
[고온통전시험(고온점등시험)][High-temperature energization test (high-temperature lighting test)]
상기의 방법으로 얻어진 봉지재가 충전된 광반도체 패키지 중 10개를, 고온하(85℃)에서, 350mA 통전, 1000시간 점등한 후, 시험후의 샘플의 통전시험을 행하고, 점등한 광반도체 장치의 수를 세었다.
10 of the optical semiconductor packages packed with the encapsulating material obtained by the above method were energized at 350 mA under high temperature (85 캜) for 1000 hours, and then subjected to the energization test of the sample after the test, Respectively.
얻어진 결과를 표 2, 표 3에 나타낸다.
The obtained results are shown in Tables 2 and 3.
[표 2][Table 2]
[표 3][Table 3]
표 2에 나타낸 바와 같이, 본 발명의 범위를 만족시키는 투명수지 조성물을 다이본드재로서 이용한 실시예 1~실시예 6에서는, 모두, (B)성분으로서 평균입경이 1μm 이하인 도전성 입자를 함유하고, 상기 (B)도전성 입자의 함유량이, (A)성분의 고형분을 기준으로 하여 0체적%보다 크고 0.1체적% 미만인 범위로서, 고투명이므로 2mm 두께의 경화물로 했을 때의 전광선 투과율이 70% 이상, 또한 헤이즈값이 60% 이하이며, 나아가 BLT가 5μm 이하이므로, 모든 패키지에서 점등가능하며 전광속값도 높은 값을 나타내었다. 즉, 밝은 패키지였다. 또한, 고온통전시험(고온점등시험)에서도 투명수지 조성물에 외관의 변화는 없고, 모든 패키지에서 점등가능하였다. 이들 결과로부터, 본 발명의 도전접속방법이면, 광의 취출효율이 높고, 신뢰성이 높은 광반도체 디바이스를 제조할 수 있는 것을 알 수 있다.
As shown in Table 2, in all of Examples 1 to 6, in which the transparent resin composition satisfying the range of the present invention was used as a die bonding material, conductive particles having an average particle size of 1 μm or less as the component (B) (B) is greater than 0% by volume and less than 0.1% by volume based on the solid content of the component (A), and the total light transmittance of the cured product of 2 mm in thickness is 70% In addition, haze value is less than 60%, and BLT is less than 5μm. Therefore, all packages can be turned on and the total luminous flux value is also high. In other words, it was a bright package. Further, even in the high-temperature energization test (high-temperature lighting test), the appearance of the transparent resin composition was not changed, and it was possible to light in all the packages. From these results, it can be seen that an optical semiconductor device with high light extraction efficiency and high reliability can be manufactured by the conductive connection method of the present invention.
한편, 표 3에 나타낸 바와 같이, (B)성분이 (A)성분의 고형분을 기준으로 하여 0.1체적% 이상이며, 본 발명의 범위를 만족시키지 않는 실리콘 수지 조성물인 비교예 1에서는, 전광선 투과율이 70% 이상, 또한 헤이즈값이 60 이하인 범위를 만족시키지 않고, 전체 광속값의 높은 패키지는 얻어지지 않았다.
On the other hand, as shown in Table 3, in Comparative Example 1 in which the component (B) is at least 0.1% by volume based on the solid content of the component (A) and does not satisfy the range of the present invention, the total light transmittance 70% or more and a haze value of 60 or less, and a package having a high total luminous flux value was not obtained.
(B)성분의 평균입경이 1μm를 초과하고 있으며, 본 발명의 범위를 만족시키지 않는 조성물인 비교예 2에서는, 투명성은 얻어졌으나, BLT가 5μm를 초과하므로 도전성이 뒤떨어지고, 120개의 패키지 중, 불점등의 패키지가 발생하였다. 또한, 고온점등시험에 있어서의 내구성도 뒤떨어지는 것이었다.
In Comparative Example 2, in which the average particle diameter of the component (B) exceeds 1 占 퐉 and the composition does not satisfy the range of the present invention, transparency was obtained, but since the BLT exceeded 5 占 퐉, the conductivity was poor, A package with a lighting failure occurred. In addition, the durability in the high-temperature lighting test was also poor.
(A-1)성분이 본 발명과는 상이한(필수관능기인 상기 일반식(1)로 표시되는 구조를 갖지 않는) 비교예 3에서는, 경화물을 얻을 수 없었다.
In Comparative Example 3 in which the component (A-1) was different from the present invention (having no structure represented by the general formula (1), which is an essential functional group), a cured product could not be obtained.
일반적인, 투명성을 갖지 않는 도전성 조성물인 비교예 4는, (B)성분의 평균입경 및 첨가량이 본 발명의 범위로부터 벗어난 것이며, 전체 광속값이 높은 패키지는 얻을 수 없었다.
In Comparative Example 4, which is a conductive composition having no general transparency, the average particle diameter and addition amount of the component (B) deviated from the range of the present invention, and a package having a high total luminous flux value could not be obtained.
또한, 본 발명은, 상기 실시형태로 한정되는 것은 아니다. 상기 실시형태는, 예시이며, 본 발명의 특허청구의 범위에 기재된 기술적 사상과 실질적으로 동일한 구성을 갖고, 동일한 작용효과를 나타내는 것은, 어떠한 것이어도 본 발명의 기술적 범위에 포함된다.
The present invention is not limited to the above-described embodiments. The above-described embodiments are illustrative, and any of those having substantially the same structure as the technical idea described in the claims of the present invention and exhibiting the same operational effects are included in the technical scope of the present invention.
Claims (10)
(A) (A-1) 하기 일반식(1)로 표시되는 구조를 분자 중에 적어도 1개 갖는 오르가노폴리실록산: 100질량부,
[화학식 1]
[식 중, m은 0, 1, 2 중 어느 하나이며, R1은 수소원자, 페닐기 또는 할로겐화페닐기, R2는 수소원자 또는 메틸기, R3은 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~12의 1가의 유기기, Z1은 -R4-, -R4-O-, -R4(CH3)2Si-O-(R4는 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기) 중 어느 하나, Z2는 산소원자 또는 치환 혹은 비치환으로 동일 혹은 상이할 수도 있는 탄소수 1~10의 2가의 유기기이다.]
(A-2) 유기과산화물: 상기 (A-1)성분의 합계량 100질량부에 대하여, 0.1~10질량부를 포함하는 실리콘 조성물과,
(B) 평균입경이 1μm 이하인 도전성 입자
를 함유하는 것이며,
상기 (B)성분의 함유량이, 상기 (A)성분의 고형분을 기준으로 하여 0체적%보다 크고, 또한 0.1체적% 미만인 범위이며,
상기 투명수지 조성물을 경화하여 얻어지는 2mm 두께의 경화물의 전광선 투과율이 70% 이상이며, 또한 헤이즈값이 60% 이하인 것을 특징으로 하는 투명수지 조성물.
As the transparent resin composition,
(A) (A-1) 100 parts by mass of an organopolysiloxane having at least one structure represented by the following general formula (1) in a molecule,
[Chemical Formula 1]
R 1 is a hydrogen atom, a phenyl group or a halogenated phenyl group, R 2 is a hydrogen atom or a methyl group, R 3 is a substituted or unsubstituted, Z 1 represents -R 4 -, -R 4 -O-, -R 4 (CH 3 ) 2 Si-O- (wherein R 4 may be substituted or unsubstituted and may be the same or different And Z 2 is an oxygen atom or a divalent organic group having 1 to 10 carbon atoms which may be the same or different and are substituted or unsubstituted.]
(A-2) Organic peroxide: a silicone composition comprising 0.1 to 10 parts by mass based on 100 parts by mass of the total amount of the component (A-1)
(B) conductive particles having an average particle diameter of 1 mu m or less
, ≪ / RTI >
The content of the component (B) is larger than 0% by volume and less than 0.1% by volume based on the solid content of the component (A)
Wherein the cured product of 2 mm in thickness obtained by curing the transparent resin composition has a total light transmittance of 70% or more and a haze value of 60% or less.
상기 (A-1)성분의 오르가노폴리실록산의 Z1이 -R4-이며, 상기 Z2가 산소원자인 것을 특징으로 하는 투명수지 조성물.
The method according to claim 1,
Wherein Z 1 of the organopolysiloxane of the component (A-1) is -R 4 -, and Z 2 is an oxygen atom.
상기 (A-1)성분의 오르가노폴리실록산의 Z1이 -R4-O- 또는, -R4(CH3)2Si-O-이며, 상기 Z2가 치환 또는 비치환으로 동일 또는 상이할 수도 있는 탄소수 1~10의 2가의 유기기인 것을 특징으로 하는 투명수지 조성물.
The method according to claim 1,
Wherein Z 1 of the organopolysiloxane of component (A-1) is -R 4 -O- or -R 4 (CH 3 ) 2 Si-O-, and Z 2 is substituted or unsubstituted, Which may be a divalent organic group having 1 to 10 carbon atoms.
상기 (A-1)성분의 오르가노폴리실록산이, 하기 일반식(2)로 표시되는 구조를 분자 중에 적어도 1개 갖는 것을 특징으로 하는 투명수지 조성물.
[화학식 2]
(식 중, m, R1, R2, R3, R4는 상기와 동일하다.)
4. The method according to any one of claims 1 to 3,
Wherein the organopolysiloxane of the component (A-1) has at least one structure represented by the following general formula (2) in the molecule.
(2)
(Wherein m, R 1 , R 2 , R 3 and R 4 are as defined above.)
상기 (A-1)성분의 오르가노폴리실록산 중에, 0.1mol% 이상의 (SiO2)단위를 갖는 것을 특징으로 하는 투명수지 조성물.
5. The method according to any one of claims 1 to 4,
Wherein the organopolysiloxane of the component (A-1) has 0.1 mol% or more of (SiO 2 ) units.
An adhesive comprising the transparent resin composition according to any one of claims 1 to 5.
A die-bonding material comprising the transparent resin composition according to any one of claims 1 to 5.
상기 다이본드재를 경화하여 얻어지는 경화물은 BLT(Bond line thickness)가 5μm 이하인 경우에 있어서 사용되는 것을 특징으로 하는 다이본드재.
8. The method of claim 7,
Wherein the cured product obtained by curing the die bond material is used when the bond line thickness (BLT) is 5 占 퐉 or less.
A conductive connection method characterized in that a transparent resin composition according to any one of claims 1 to 5 is used so that the optical semiconductor element and the substrate are electrically connected to each other with a BLT of 5 μm or less.
An optical semiconductor device characterized in that an optical semiconductor element and a substrate are electrically connected by a conductive connection method according to claim 9.
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| PCT/JP2015/005189 WO2016092725A1 (en) | 2014-12-08 | 2015-10-14 | Transparent resin composition, adhesive comprising composition, die bond material comprising composition, conductive connection method using composition, and optical semiconductor device obtained using method |
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| JP6962290B2 (en) * | 2018-08-02 | 2021-11-05 | 信越化学工業株式会社 | UV curable silicone composition for stereolithography and its cured product |
| CN109536122A (en) * | 2018-12-12 | 2019-03-29 | 烟台德邦科技有限公司 | A kind of photovoltaic imbrication component organosilicon-modified acrylic conducting resinl |
| JP2020125390A (en) * | 2019-02-01 | 2020-08-20 | 信越化学工業株式会社 | Uv-curable liquid organopolysiloxane composition for image display device, adhesive for image display device including the composition, image display device using the adhesive, and adhesion method using the adhesive |
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| JP3769152B2 (en) | 1999-09-03 | 2006-04-19 | 京セラケミカル株式会社 | Conductive paste |
| JP2007214543A (en) * | 2006-01-12 | 2007-08-23 | Shin Etsu Chem Co Ltd | Uv-curing silicone composition for light-emitting diode element |
| JP2008074982A (en) * | 2006-09-22 | 2008-04-03 | Shin Etsu Chem Co Ltd | Thermosetting silicone composition and light emission diode element using the same |
| JP2008518082A (en) * | 2004-10-28 | 2008-05-29 | ダウ・コーニング・コーポレイション | Curable conductive composition |
| JP2012052029A (en) | 2010-09-01 | 2012-03-15 | Shin-Etsu Chemical Co Ltd | Die bond agent and optical semiconductor device |
| JP2012149274A (en) | 2007-08-08 | 2012-08-09 | Hitachi Chemical Co Ltd | Adhesive composition, film-like adhesive, and connection structure for circuit member |
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| TWI437047B (en) * | 2006-01-12 | 2014-05-11 | Shinetsu Chemical Co | Ultraviolet-curable silicone composition for light emitting diode element |
| JP2008094877A (en) * | 2006-10-06 | 2008-04-24 | Shin Etsu Chem Co Ltd | Ultraviolet-curable thermoconductive silicone composition |
| JP2009102603A (en) * | 2007-10-05 | 2009-05-14 | Hitachi Chem Co Ltd | Adhesive composition and semiconductor device |
| JP5388284B2 (en) * | 2009-05-26 | 2014-01-15 | 三菱レイヨン株式会社 | Curable composition and article |
| KR20130115358A (en) * | 2011-02-15 | 2013-10-21 | 디아이씨 가부시끼가이샤 | Curable composition for nanoimprinting, nanoimprinting compact, and pattern forming method |
| KR101371102B1 (en) * | 2012-02-10 | 2014-03-10 | 도레이첨단소재 주식회사 | Composition for Conductive Adhesive, Adhesive Film and Circuit Board Using the Same |
| JP5814175B2 (en) * | 2012-04-16 | 2015-11-17 | 信越化学工業株式会社 | Thermosetting silicone resin composition for LED reflector, LED reflector and optical semiconductor device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3769152B2 (en) | 1999-09-03 | 2006-04-19 | 京セラケミカル株式会社 | Conductive paste |
| JP2008518082A (en) * | 2004-10-28 | 2008-05-29 | ダウ・コーニング・コーポレイション | Curable conductive composition |
| JP2007214543A (en) * | 2006-01-12 | 2007-08-23 | Shin Etsu Chem Co Ltd | Uv-curing silicone composition for light-emitting diode element |
| JP2008074982A (en) * | 2006-09-22 | 2008-04-03 | Shin Etsu Chem Co Ltd | Thermosetting silicone composition and light emission diode element using the same |
| JP2012149274A (en) | 2007-08-08 | 2012-08-09 | Hitachi Chemical Co Ltd | Adhesive composition, film-like adhesive, and connection structure for circuit member |
| JP2012052029A (en) | 2010-09-01 | 2012-03-15 | Shin-Etsu Chemical Co Ltd | Die bond agent and optical semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102340593B1 (en) | 2021-12-21 |
| CN107001546B (en) | 2019-06-18 |
| JP2016108458A (en) | 2016-06-20 |
| JP6285346B2 (en) | 2018-02-28 |
| CN107001546A (en) | 2017-08-01 |
| WO2016092725A1 (en) | 2016-06-16 |
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