KR20170046999A - Apparatus for treating substrate - Google Patents
Apparatus for treating substrate Download PDFInfo
- Publication number
- KR20170046999A KR20170046999A KR1020150147322A KR20150147322A KR20170046999A KR 20170046999 A KR20170046999 A KR 20170046999A KR 1020150147322 A KR1020150147322 A KR 1020150147322A KR 20150147322 A KR20150147322 A KR 20150147322A KR 20170046999 A KR20170046999 A KR 20170046999A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- dielectric plate
- gap
- distance
- antenna
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 claims description 40
- 239000004020 conductor Substances 0.000 description 15
- 230000005684 electric field Effects 0.000 description 7
- 230000000644 propagated effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- -1 electrons Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a dielectric plate provided under an antenna to which a microwave is applied, and a gap having a different thickness is formed between the antenna and the dielectric plate in the region of the dielectric plate.
Description
The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.
Plasma is an ionized gas state produced by very high temperature, strong electric field or RF electromagnetic fields, and composed of ions, electrons, radicals, and so on. In the semiconductor device manufacturing process, various processes are performed using plasma. For example, the etching process is performed by colliding the ion particles contained in the plasma with the substrate.
1 is a sectional view showing a general substrate processing apparatus. Referring to FIG. 1, when a plasma is generated using a microwave, a microwave applied from the
The present invention is to provide a substrate processing apparatus capable of facilitating the adjustment of the electric field density of a microwave within a process chamber by region.
The present invention is also intended to provide a substrate processing apparatus capable of facilitating adjustment of the plasma density in each region within the processing chamber.
The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.
The present invention provides a substrate processing apparatus. According to one embodiment, the substrate processing apparatus includes a processing chamber in which a processing space in which a substrate is processed is formed; A substrate supporting unit for supporting the substrate in the processing space; An antenna disposed on the substrate supporting unit and having a plurality of slots; A microwave applying unit for applying a microwave to the antenna; A gap is formed between the antenna and the dielectric plate, and the gap is provided in a different thickness for each region of the dielectric plate when viewed from above.
The gap may be provided such that a region facing the central region of the dielectric plate is thicker than a region facing the edge region of the dielectric plate.
The gap may be provided such that a region facing the edge region of the dielectric plate is thicker than a region facing the center region of the dielectric plate.
The dielectric plate having a first region located a first distance from the center of the dielectric plate, a second region located a second distance from the center of the dielectric plate, and a second region located a third distance from the center of the dielectric plate, Wherein the second distance is greater than the first distance and less than the third distance, wherein the gap is such that the thickness of the region facing the second region is opposite to the first region and the third region, The thickness of the region to be formed may be thicker than the thickness of the region to be formed.
The gap may be provided in a region facing the central region of the dielectric plate.
The gap may be provided in a region facing the edge region of the dielectric plate.
The dielectric plate having a first region located a first distance from the center of the dielectric plate, a second region located a second distance from the center of the dielectric plate, and a second region located a third distance from the center of the dielectric plate, 3 region, and the second distance is greater than the first distance and smaller than the third distance, and the gap may be provided in an area opposed to the second region.
The gap is formed by inserting the upper surface of the dielectric plate into the dielectric plate.
The maximum thickness of the gap is provided as 3 mm.
The substrate processing apparatus according to the embodiment of the present invention can facilitate the adjustment of the electric field density of each microwave in the process chamber.
In addition, the substrate processing apparatus according to the embodiment of the present invention can facilitate the adjustment of the plasma density per region in the process chamber.
1 is a sectional view showing a general substrate processing apparatus.
2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
3 is a bottom view showing the bottom of the antenna of Fig.
4 to 9 are cross-sectional views illustrating a dielectric plate according to another embodiment of FIG.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.
2 is a sectional view showing a
Referring to FIG. 2, the
The
An opening (not shown) may be formed in one side wall of the
An
The
The
A plurality of lift pins are provided and located in each of the pin holes (not shown) formed in the
The
The
The
The
The
The
The
The
The
The microwave whose phase is converted by the
The
The
3 is a view showing the bottom surface of the
Referring again to FIG. 2, the
The
According to one embodiment, a
The
Referring to FIG. 4, the
Referring to FIG. 5, the
6, the
Referring to FIG. 7, the
Referring to FIG. 8, the
9, the
In the case of Figs. 4 to 9, configurations, structures, functions and the like other than the position and thickness of the
As described above, it is easy to adjust the electric field density of each microwave in the
W:
100: process chamber 200: substrate support unit
300: gas supply unit 400: microwave application unit
500: Antenna 600:
700: Dielectric plate 800: Gap
Claims (9)
A substrate supporting unit for supporting the substrate in the processing space;
An antenna disposed on the substrate supporting unit and having a plurality of slots;
A microwave applying unit for applying a microwave to the antenna;
And a dielectric plate provided under the antenna,
Wherein a gap is formed between the antenna and the dielectric plate and the gap is provided in a different thickness for each region of the dielectric plate when viewed from above.
Wherein the gap is provided such that a region facing the central region of the dielectric plate is thicker than a region facing the edge region of the dielectric plate.
Wherein the gap is provided such that a region facing the edge region of the dielectric plate is thicker than a region facing the central region of the dielectric plate.
Wherein the dielectric plate comprises:
A first region located at a first distance from the center of the dielectric plate,
A second region located a second distance from the center of the dielectric plate and
And a third region located a third distance from the center of the dielectric plate,
Wherein the second distance is greater than the first distance and less than the third distance,
Wherein the gap is provided such that the thickness of the region facing the second region is thicker than the thickness of the region facing the first region and the third region.
Wherein the gap is provided in a region opposed to a central region of the dielectric plate.
Wherein the gap is provided in a region opposite to an edge region of the dielectric plate.
Wherein the dielectric plate comprises:
A first region located at a first distance from the center of the dielectric plate,
A second region located a second distance from the center of the dielectric plate and
And a third region located a third distance from the center of the dielectric plate,
Wherein the second distance is greater than the first distance and less than the third distance,
Wherein the gap is provided in a region opposite to the second region.
Wherein the gap is formed by recessing the upper surface of the dielectric plate inside the dielectric plate.
Wherein the maximum thickness of the gap is 3 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150147322A KR20170046999A (en) | 2015-10-22 | 2015-10-22 | Apparatus for treating substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150147322A KR20170046999A (en) | 2015-10-22 | 2015-10-22 | Apparatus for treating substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20170046999A true KR20170046999A (en) | 2017-05-04 |
Family
ID=58743185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150147322A KR20170046999A (en) | 2015-10-22 | 2015-10-22 | Apparatus for treating substrate |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20170046999A (en) |
-
2015
- 2015-10-22 KR KR1020150147322A patent/KR20170046999A/en unknown
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