KR101736839B1 - Apparatus and method for treating substrate - Google Patents

Apparatus and method for treating substrate Download PDF

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Publication number
KR101736839B1
KR101736839B1 KR1020150187206A KR20150187206A KR101736839B1 KR 101736839 B1 KR101736839 B1 KR 101736839B1 KR 1020150187206 A KR1020150187206 A KR 1020150187206A KR 20150187206 A KR20150187206 A KR 20150187206A KR 101736839 B1 KR101736839 B1 KR 101736839B1
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South Korea
Prior art keywords
ground
substrate
grounding
sheet
contact area
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KR1020150187206A
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Korean (ko)
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김성우
김상림
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세메스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a substrate processing device. The substrate processing device according to an embodiment of the present invention includes: a processing chamber having a processing space formed therein; a substrate supporting unit for supporting a substrate in the processing space; and a grounding module for grounding the substrate processing device. The grounding module includes a grounding sheet having a surface contact with the device, a grounding line having one end connected to the grounding sheet and the other end grounded, and a control unit for controlling a contact area between the grounding sheet and the device. The present invention can properly control a grounding resistance value.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus for processing a substrate.

Plasma is an ionized gas state produced by very high temperature, strong electric field or RF electromagnetic fields, and composed of ions, electrons, radicals, and so on. In the semiconductor device manufacturing process, various processes are performed using plasma. For example, the etching process is performed by colliding the ion particles contained in the plasma with the substrate.

One example of a general substrate processing apparatus for processing a substrate using plasma is a plasma processing apparatus in which a microwave applied to an antenna is applied to the interior of a process chamber through a dielectric plate positioned under the antenna, Plasma is generated by excitation. As described above, in an apparatus for processing a substrate using a plasma, arcing occurs in the plasma excitation due to static electricity remaining in the apparatus, electric current leaking from the components, or the like, Provide grounding.

However, when the grounding resistance of the provided grounding is excessively large, it is difficult to perform the function of the grounding properly, and when the grounding resistance is excessively small, a current used in the device may leak, It is not easy to provide a ground having a ground resistance value that satisfies all of the processes or the processes to be performed.

An object of the present invention is to provide an apparatus and a method for appropriately adjusting the ground resistance value.

In addition, the present invention is intended to provide an apparatus and method that can prevent arcing in a device.

Further, the present invention is intended to provide an apparatus and a method which can prevent a malfunction of a part using electric power in the apparatus.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. According to one embodiment, a substrate processing apparatus for processing a substrate includes: a processing chamber having a processing space formed therein; A substrate supporting unit for supporting the substrate in the processing space; And a grounding module for grounding the substrate processing apparatus, wherein the grounding module comprises: a grounding sheet having a surface to be in contact with the device; a grounding line having one end connected to the grounding sheet and the other end grounding; And a control unit for adjusting a contact area between the ground sheet and the apparatus.

The grounding module further includes a grounding resistance measuring member for measuring a grounding resistance of the apparatus, wherein the control unit adjusts the contact area according to a grounding resistance value measured from the grounding resistance measuring member.

Wherein the ground sheet is provided in the form of a sheet of an elastic material and one end of the ground sheet is fixed to one surface of the device so that one surface of the ground sheet faces the device, The distance from one side of the device is adjusted.

The ground sheet is provided so that the entire one surface of the ground sheet is in contact with one surface of the device when no force is externally applied.

The control unit includes a driving member that generates a driving force for moving the other end of the ground sheet, and a control unit that is connected to the other end of the ground sheet at one end and to the driving member at the other end, A control member for controlling the driving member according to the ground resistance value; .

The ground sheet may be installed below the substrate supporting unit.

The control unit increases the contact area when the ground resistance exceeds a maximum value of the set range during the process progression and decreases the contact area when the ground resistance is smaller than the minimum value of the set range.

The present invention also provides a substrate processing method. According to one embodiment, the substrate processing method adjusts the contact area between the ground sheet connected to the ground line to be grounded and the substrate processing apparatus for processing the substrate according to the ground resistance value of the substrate processing apparatus.

The adjustment of the contact area is performed by increasing the contact area when the ground resistance exceeds the maximum value of the set range and decreasing the contact area when the ground resistance is smaller than the minimum value of the set range.

The adjustment of the contact area can be performed during the process.

The above process is a process of processing a substrate using a plasma.

The apparatus and method according to embodiments of the present invention can appropriately adjust the ground resistance value.

Further, the apparatus and method according to embodiments of the present invention can prevent arcing in the apparatus.

Further, the apparatus and method according to the embodiment of the present invention can prevent a malfunction of a part using electric power in the apparatus.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a view showing a bottom surface of the antenna of Fig. 1. Fig.
Figures 3 and 4 are simplified views of the grounding module of Figure 1;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a sectional view showing a substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 performs processing on a substrate W using a plasma. The substrate processing apparatus 10 includes a process chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave application unit 400, an antenna 500, a chopper plate 600, a dielectric plate 700, A grounding module 800, and a liner 900.

The process chamber 100 is formed with a process space 101 therein and the inner space 101 is provided with a space in which the process of processing the substrate W is performed. The process chamber 100 includes a body 110 and a cover 120.

The upper surface of the body 110 is opened and a space is formed therein. A groove 112 into which the flange 920 is inserted is formed on the inner wall of the body 110.

The cover 120 is placed on top of the body 110 and seals the open top surface of the body 110. The cover 120 is stepped inside the lower end so that the upper space has a larger radius than the lower space.

A substrate inlet (not shown) may be formed on one side wall of the process chamber 100. The substrate inlet (not shown) is provided as a passage through which the substrate W can enter and exit the process chamber 100. The substrate inlet is opened and closed by an opening and closing member such as a door.

An exhaust hole 102 is formed in the bottom surface of the process chamber 100. The exhaust hole 102 is connected to the exhaust line 131. With the exhaust through the exhaust line 131, the interior of the process chamber 100 can be maintained at a pressure lower than normal pressure. The reaction byproducts generated in the process and the gas staying in the process space 101 may be discharged to the outside through the exhaust line 131.

The substrate supporting unit 200 supports the substrate W in the processing space 101. The substrate support unit 200 includes a support plate 210, a lift pin (not shown), a heater 220, and a support shaft 230.

The support plate 210 has a predetermined thickness and is provided with an original plate having a larger radius than the substrate W. [ A substrate providing groove on which the substrate W is placed may be formed on the upper surface of the support plate 210. According to the embodiment, the support plate 210 is not provided with a structure for fixing the substrate W, and the substrate W is provided to the process while being placed on the support plate 210. Alternatively, the support plate 210 may be provided as an electrostatic chuck for fixing the substrate W using electrostatic force, or may be provided as a chuck for fixing the substrate W in a mechanical clamping manner.

A plurality of lift pins are provided and located in each of the pin holes (not shown) formed in the support plate 210. The lift pins move up and down along the pin holes to load the substrate W onto the support plate 210 or unload the substrate W placed on the support plate 210. [

The heater 220 is provided inside the support plate 210. The heater 220 is provided as a helical coil and can be embedded in the support plate 210 at uniform intervals. The heater 220 is connected to an external power source (not shown) and generates heat by resistance to a current applied from an external power source. The generated heat is transferred to the substrate W via the support plate 210, and the substrate W is heated to a predetermined temperature.

The support shaft 230 is positioned below the support plate 210 and supports the support plate 210. The support plate 210 can be provided to be movable up and down by a driving member (not shown).

The gas supply unit 300 supplies the process gas into the process space 101 of the process chamber 100. The gas supply unit 300 may supply the process gas into the process chamber 100 through the gas supply hole 105 formed in the side wall of the process chamber 100. A plurality of gas supply holes 105 may be provided.

The microwave applying unit 400 applies a microwave to the antenna 500. The microwave application unit 400 includes a microwave generator 410, a first waveguide 420, a second waveguide 430, a phase shifter 440, and a matching network 450.

The microwave generator 410 generates a microwave.

The first waveguide 420 is connected to the microwave generator 410 and a passageway is formed therein. The microwave generated by the microwave generator 410 is transmitted to the phase converter 440 along the first waveguide 420.

The second waveguide 430 includes an outer conductor 432 and an inner conductor 434.

The outer conductor 432 extends downward in the vertical direction at the end of the first waveguide 420, and a passageway is formed therein. The upper end of the outer conductor 432 is connected to the lower end of the first waveguide 420 and the lower end of the outer conductor 432 is connected to the upper end of the cover 120.

The inner conductor 434 is located in the outer conductor 432. The inner conductor 434 is provided as a rod in the shape of a cylinder, and its longitudinal direction is arranged in parallel with the up-and-down direction. The upper end of the inner conductor 434 is inserted and fixed to the lower end of the phase shifter 440. The inner conductor 434 extends downward and its lower end is located inside the process chamber 100. The lower end of the inner conductor 434 is fixedly coupled to the center of the antenna 500. The inner conductor 434 is disposed perpendicularly to the upper surface of the antenna 500. The inner conductor 434 may be provided by sequentially coating a first plated film and a second plated film on a copper rod. According to one embodiment, the first plating film may be made of nickel (Ni), and the second plating film may be provided of gold (Au). The microwave is propagated mainly to the antenna 500 through the first plated film.

The microwave whose phase is converted by the phase converter 440 is transmitted to the antenna 500 along the second waveguide 430.

The phase shifter 440 is provided at a point where the first waveguide 420 and the second waveguide 430 are connected to change the phase of the microwave. The phase shifter 440 may be provided in the shape of a pointed cone. The phase shifter 440 propagates the microwave transmitted from the first waveguide 420 to the second waveguide 430 in a mode-converted state. The phase converter 440 may convert the microwave into TE mode to TEM mode.

The matching network 450 is provided in the first waveguide 420. The matching network 450 matches the microwave propagated through the first waveguide 420 to a predetermined frequency.

2 is a bottom view of the antenna 500 of FIG. 1 and 2, the antenna 500 is provided in a plate shape. The antenna 500 is disposed on the top of the substrate supporting unit 200. For example, the antenna 500 may be provided as a thin disc. The antenna 500 is disposed to face the support plate 210. A plurality of slots 501 are formed in the antenna 500. The slots 501 may be provided in a 'x' shape. Alternatively, the shape and arrangement of the slots may be varied. A plurality of slots 501 are arranged in a plurality of ring shapes in combination with each other. The area of the antenna 500 in which the slots 501 are formed is referred to as a first area A1 and the area of the antenna 500 in which the slots 501 are not formed is referred to as a second area B1, , B3). The first areas A1, A2, and A3 and the second areas B1, B2, and B3 each have a ring shape. A plurality of first regions A1, A2, and A3 are provided and have different radii from each other. The first areas A1, A2, and A3 have the same center and are spaced apart from each other in the radial direction of the antenna 500. [ A plurality of second regions B1, B2, and B3 are provided and have different radii from each other. The second regions B1, B2, and B3 have the same center and are disposed apart from each other in the radial direction of the antenna 500. [ The first areas A1, A2, and A3 are located between the adjacent second areas B1, B2, and B3, respectively. A hole 502 is formed in the center of the antenna 500. The lower end of the inner conductor 434 passes through the hole 502 and is coupled to the antenna 500. The microwaves are transmitted through the slots 501 to the dielectric plate 700.

Referring again to FIG. 1, the wave plate 600 is disposed on an upper portion of the antenna 500, and is provided with a disk having a predetermined thickness. The chop panel 600 may have a radius corresponding to the inside of the cover 120. The wave plate 600 is provided with a dielectric such as alumina, quartz, or the like. The microwaves propagated in the vertical direction through the inner conductor 434 propagate in the radial direction of the wave plate 600. The wavelength of the microwave propagated to the wave plate 600 is compressed and resonated.

The dielectric plate 700 transfers the microwave from the antenna 500 to the processing space 101. The dielectric plate 700 is provided on the upper surface of the processing space 101. That is, the dielectric plate 700 is disposed at the bottom of the antenna 500 and is provided as a disk having a predetermined thickness. The dielectric plate 700 is provided as a dielectric such as quartz. The bottom surface of the dielectric plate 700 is provided with a concave surface recessed inward. The dielectric plate 700 may be positioned at the same height as the lower end of the cover 120. The side portion of the dielectric plate 700 is stepped so that the upper end has a larger radius than the lower end. The upper end of the dielectric plate (700) lies at the lower end of the cover (120). The lower end of the dielectric plate 700 has a smaller radius than the lower end of the cover 120 and maintains a predetermined distance from the lower end of the cover 120. The microwave is radiated into the process chamber 100 through the dielectric plate 700. The process gas supplied into the process chamber 100 by the electric field of the emitted microwaves is excited into a plasma state. According to the embodiment, the wave plate 600, the antenna 500, and the dielectric plate 700 may be in close contact with each other.

The liner 900 is installed on the side of the processing space 101, that is, on the inner wall of the processing chamber 100. The liner 900 prevents the inner walls of the process chamber 100 from being damaged by the plasma. The liner 900 may be provided with a dielectric material such as quartz. The liner 900 includes a body 910 and a flange 920.

Figures 3 and 4 are simplified views of the grounding module of Figure 1; 1, 3, and 4, the grounding module 800 grounds the substrate processing apparatus 10. The grounding module 800 includes a sheet 810, a grounding line 820, a grounding resistance measuring member 830 and a control unit 840.

The ground sheet 810 is in surface contact with the substrate processing apparatus 10. One end 811 of the ground sheet 810 is fixed to one surface of the substrate processing apparatus 10 so that one surface 813 of the ground sheet 810 faces the substrate processing apparatus 10. The other end 812 of the ground sheet 810 is adjusted by the control unit 840 from the one surface of the substrate processing apparatus 10. According to one embodiment, the ground sheet 810 may be installed on the lower side of the substrate support unit 200, i.e., on the side of the support shaft 230. The ground sheet 810 is a conductor and is provided in the form of a sheet of an elastic material. The ground sheet 810 is provided so that the entire one surface 813 of the ground sheet 810 is brought into contact with one surface of the substrate processing apparatus 10 as shown in Fig. Therefore, when the other end 812 of the ground sheet 810 receives a force from the outside and moves away from one surface of the substrate processing apparatus 10, the contact area between the ground sheet 810 and one surface of the substrate processing apparatus 10 is And the other end 812 of the ground sheet 810 is brought close to the one side of the substrate processing apparatus 10 when the force exerted from the outside is reduced so that the ground sheet 810 and one surface of the substrate processing apparatus 10 The contact area between the electrodes increases.

One end of the ground line 820 is connected to the ground sheet 810, and the other end of the ground line 820 is grounded. The ground line 820 is provided as a conductor wire. The static electricity remaining in the substrate processing apparatus 10 is grounded through the ground sheet 810 and the ground line 820.

The grounding resistance measuring member 830 measures the grounding resistance of the substrate processing apparatus 10. The ground resistance measurement member 830 transmits the measured ground resistance value to the control unit 840. [

The control unit 840 adjusts the contact area between the ground sheet 810 and the substrate processing apparatus 10 according to the ground resistance value measured from the grounding resistance measuring member 830 to adjust the ground resistance of the substrate processing apparatus 10 . According to one embodiment, the control unit 840 includes a drive member 841, a drive line 842, and a control member 843.

The driving member 841 generates a driving force for moving the other end 812 of the ground sheet 810. For example, the driving member 841 may be provided in a configuration including a winch that winds the driving line 842. [

One end of the driving line 842 is connected to the other end 812 of the ground sheet 810 and the other end of the driving line 842 is connected to the driving member 841. The driving line 842 transmits the driving force generated from the driving member 841 to the other end 812 of the ground sheet 810.

The control member 843 controls the driving member 841 in accordance with the ground resistance value measured by the grounding resistance measuring member 830 in real time during the process of processing the substrate by using the plasma . For example, when the driving member 841 includes a winch wound around the other end of the driving line 842, the control member 843 may be turned on when the grounding resistance is smaller than the minimum value of the set range The winch is used to wind the other end of the drive line 842 to control the drive member 841 to reduce the contact area between the ground sheet 810 and the substrate processing apparatus 10. [ Thus, by reducing the contact area, the ground resistance increases. 4, when the grounding resistance exceeds the maximum value of the set range during the process, the control member 843 releases the other end of the driving line 842 by using the winch, To increase the contact area between the substrate processing apparatus 10 and the substrate processing apparatus 10. Thus, as the contact area increases, the ground resistance decreases. Therefore, the ground resistance value of the substrate processing apparatus 10 can be appropriately adjusted so as to be maintained within the set range. Arcing in the substrate processing apparatus 10 and malfunction of the parts using electric power of the substrate processing apparatus 10 can therefore be prevented.

The body 910 has a ring shape facing the inner wall of the process chamber 100. A through hole 912 is formed in the body 910 so as to be opposed to the gas supply holes 105. The process gas injected from the gas supply hole 105 flows into the process chamber 100 through the through hole 912.

The flange 920 is provided to extend from the outer wall of the body 910 to the interior of the walls of the process chamber 100. The flange 920 is provided in a ring shape surrounding the periphery of the body 910. The flange 920 may be provided on the top of the liner 900.

The above description has been made by way of example of a substrate processing apparatus for processing a substrate by using plasma. However, the present invention is not limited to the above-described example, and can be applied to any apparatus requiring grounding.

W: substrate 10; Substrate processing apparatus
100: process chamber 200: substrate support unit
300: gas supply unit 400: microwave application unit
500: Antenna plate 600:
700: Dielectric plate 800: Grounding module
810: ground sheet 820: ground line
830: grounding resistance measuring member 840: control unit
841: driving member 842: driving line
843: control member 900: liner

Claims (11)

An apparatus for processing a substrate,
A process chamber having a processing space formed therein;
A substrate supporting unit for supporting the substrate in the processing space;
And a grounding module for grounding the substrate processing apparatus,
The grounding module includes:
A ground sheet contacting the surface of the apparatus;
A ground line having one end connected to the ground sheet and the other end grounded;
And a control unit for adjusting a contact area between the ground sheet and the apparatus. The method according to claim 1,
Wherein the grounding module further comprises a grounding resistance measuring member for measuring a grounding resistance of the device,
Wherein the control unit adjusts the contact area according to a ground resistance value measured from the ground resistance measuring member. 3. The method of claim 2,
The ground sheet is provided in the form of an elastic sheet,
One end of the ground sheet is fixed to one surface of the device so that one side of the ground sheet faces the device,
And the other end of the ground sheet is adjusted by the control unit to a distance from one surface of the apparatus. The method of claim 3,
Wherein the ground sheet is provided such that the entire one surface of the ground sheet is in contact with one surface of the apparatus when no force is externally applied thereto. 5. The method of claim 4,
Wherein the control unit comprises:
A driving member for generating a driving force for moving the other end of the ground sheet;
A driving line having one end connected to the other end of the ground sheet and the other end connected to the driving member and transmitting the driving force to the other end of the ground sheet;
A control member for controlling the driving member according to the ground resistance value; And the substrate processing apparatus. 6. The method according to any one of claims 1 to 5,
Wherein the ground sheet is provided at a lower portion of the substrate supporting unit. 6. The method according to any one of claims 2 to 5,
Wherein the control unit is configured to increase the contact area when the ground resistance exceeds a maximum value of the set range during the process progression and to decrease the contact area when the ground resistance is smaller than the minimum value of the set range, Processing device. Wherein the contact area between the ground sheet connected to the ground line to be grounded and the substrate processing apparatus for processing the substrate is adjusted according to the ground resistance value of the substrate processing apparatus. 9. The method of claim 8,
Wherein the adjustment of the contact area is performed by increasing the contact area when the ground resistance exceeds a maximum value of the set range and decreasing the contact area when the ground resistance is smaller than the minimum value of the set range. Processing method. 10. The method according to claim 8 or 9,
Wherein the adjustment of the contact area is performed during the process. 11. The method of claim 10,
Wherein the process is a process of processing a substrate using a plasma.
KR1020150187206A 2015-12-28 2015-12-28 Apparatus and method for treating substrate KR101736839B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112703591A (en) * 2018-09-18 2021-04-23 Tes股份有限公司 Substrate support unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112703591A (en) * 2018-09-18 2021-04-23 Tes股份有限公司 Substrate support unit
CN112703591B (en) * 2018-09-18 2024-04-12 Tes股份有限公司 Substrate supporting unit

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