KR20170027904A - Diode - Google Patents
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- KR20170027904A KR20170027904A KR1020150124055A KR20150124055A KR20170027904A KR 20170027904 A KR20170027904 A KR 20170027904A KR 1020150124055 A KR1020150124055 A KR 1020150124055A KR 20150124055 A KR20150124055 A KR 20150124055A KR 20170027904 A KR20170027904 A KR 20170027904A
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- undoped
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/044—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
Abstract
The present invention can reduce manufacturing cost compared to other diodes such as a PN junction diode and a transistor-back-to-back diode, has excellent process stability, durability and electrical characteristics, To a diode of a novel structure which is easy to manufacture by a process.
Description
The present invention relates to a diode, and more particularly, to a diode that can reduce manufacturing cost compared with other diodes such as a PN junction diode and a transistor-back-to-back diode, And a diode having a novel structure which is easy to manufacture by a thin film process widely used in industry.
Flexible display and transparent display are the most popular flat panel displays in the future. Flexible displays are lightweight / compact, unbreakable, deformable displays based on plastic substrates in a heavy, hard, and fragile display that is centered on conventional glass substrates. Transparent display is a display in which the background of the screen is seen as a backlight. In the past, it was mainly projected on a transparent screen, but now it is being developed in the direction of constructing a transparent screen. AMOLED .
Transparent displays share the characteristic that the screen has the transparency and the back side of the screen is visible.
To implement such a transparent display, the diodes used as antistatic circuits in transparent displays are also required to be transparent.
The prior art relating to such a diode is as follows.
Korean Patent No. 1183111 discloses a unipolar vertical diode in which a substrate, a lower electrode, a ZnO thin film, a ZnMgO thin film, and an upper electrode are sequentially laminated, wherein the lower electrode is made of indium tin oxide (ITO) In or Ir is added as an impurity, and the ZnMgO thin film is a g-ZnMgO thin film having a concentration gradient of Mg. The present invention relates to a mono-polarized vertical diode, which is applied to a flat panel display device or a mobile electronic device Lt; RTI ID = 0.0 > transparent < / RTI > electronics technology.
The inventors of the present invention have a structure different from the above-described conventional art, and are easier to manufacture than PN-junction diodes and transistor-back-to-back diodes and can reduce manufacturing costs and are also applicable to transparent diodes The present inventors have made intensive studies to fabricate a diode having a novel structure as a result of which the present invention has been accomplished.
Therefore, an object of the present invention is to provide a novel structure which can be easily manufactured by a thin film process widely used in the industry, which can reduce the manufacturing cost by simplifying the manufacturing process as compared with the conventional diode and has excellent process stability, durability, To provide a diode.
In order to achieve the above object, the present invention provides a semiconductor device comprising a Zn-doped conductor layer, an insulator layer formed in contact with the Zn-doped conductor layer, and a Zn formed in contact with the insulator layer, And a diode including the doped or undoped conductor layer.
In one embodiment of the present invention, a Zn-doped or undoped conductor layer or a semiconductor layer may be additionally formed between the Zn-doped conductor layer and the insulator layer.
In one embodiment of the present invention, a Zn-doped or undoped conductor layer or a semiconductor layer may be additionally formed in one layer or repeatedly as a multi-layer between the insulator layer and the Zn-doped or undoped conductor layer have.
The present invention also provides a semiconductor device comprising: a Zn-doped or undoped conductor layer; a Zn-doped conductor layer formed by contacting the Zn-doped or undoped conductor layer; Layer, an insulator layer formed in contact with the Zn-doped conductor layer or the semiconductor layer, and a Zn-doped or undoped conductor layer formed in contact with the insulator layer.
In one embodiment of the present invention, a Zn-doped or undoped conductor layer and a Zn-doped conductor layer or a Zn-doped conductor layer or a non-doped conductor layer or a semiconductor layer are formed in one layer or repeatedly May be additionally formed in multiple layers.
In one embodiment of the present invention, a Zn-doped or undoped conductor layer or a semiconductor layer may be additionally formed in one layer or repeatedly as a multi-layer between the insulator layer and Zn-doped or undoped conductor layers .
The diode according to the present invention can be manufactured by an easy process compared to the manufacturing process of a PN junction diode and a transistor back-to-back diode, and can be manufactured by a thin film process which is widely used in industry and has excellent process stability, durability and electrical characteristics This is possible.
Figures 1 to 6 schematically illustrate the structure of a diode according to different embodiments of the present invention.
The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary meanings and should be construed in accordance with the technical meanings and concepts of the present invention.
The embodiments described herein are preferred embodiments of the present invention and are not intended to represent all of the technical ideas of the present invention, so that various equivalents and modifications may be substituted for them at the time of application of the present invention.
Hereinafter, the present invention will be described in detail with reference to the drawings.
1 is a schematic diagram showing the simplest structure of a diode according to the present invention.
Referring to FIG. 1, a diode according to the present invention includes a Zn-doped
The Zn-doped
Zn in the Zn-doped
Accordingly, the diode according to the present invention is characterized in that diodes are generated by using various insulator layers and various kinds of conductor layers doped with Zn.
In one embodiment of the present invention, a conductor layer or a semiconductor layer doped with Zn or doped with Zn may be formed between the
As shown in FIG. 2, a Zn-doped or
In an embodiment of the present invention, a conductive layer or a semiconductor layer (not shown) doped with or doped with Zn is formed between the
3, a Zn-doped or
Also, illustratively, a conductor layer or a semiconductor layer doped with Zn and a conductor layer or a semiconductor layer not doped with Zn are repeatedly formed between the
4 shows a schematic structure of a diode according to a second embodiment according to the present invention.
Referring to FIG. 4, a diode according to the present invention includes a Zn-doped or
In the diode according to the second embodiment of the present invention, the Zn-doped or
In one embodiment of the present invention, a Zn-doped or undoped conductor layer or semiconductor layer is formed between the Zn-doped or
As shown in FIG. 5, a Zn-doped or undoped conductor layer or a
6, a conductor layer or a semiconductor layer in which Zn is not doped or a conductor layer or a semiconductor layer doped with Zn is formed between a Zn-doped or undoped conductor layer and a Zn-doped conductor layer or a semiconductor layer, Layer and a non-doped conductor layer or a semiconductor layer may be sequentially formed repeatedly, and modifications of such a structure will be apparent to those skilled in the art.
In one embodiment of the present invention, a Zn-doped or undoped conductor layer or a semiconductor layer is formed between the
As illustrated in FIG. 5, a conductor layer or a
In the present invention, the Zn-doped conductor layer may be formed of at least one of Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, , Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, , Bi and a conductive polymer (for example, PEDOT: PSS, PANI), Zn x O x , In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x, or Sn x Ga x Zn x O x , containing compounds, such as in x Sn x Zn x O x compounds Ca has entered a 10%, AlZn (Al 95% +
In the present invention, the Zn-undoped conductor layer may be formed of at least one of Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Ti, W, RE, Os, Ir, Pt, Au, Hg, Tl, Sn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, A single layer such as Al, Cu, Ag, Au, Ti, or the like is used as a compound containing at least one selected from the group consisting of Pb, Bi and a conductive polymer (for example, PEDOT: PSS, PANI) Or may be mixed with a bilayer (e.g., Cu / Ti, Al / Ti, etc.), and Zn, which is obvious to those skilled in the art, may be formed of undoped conductor material.
In the present invention, the Zn-doped semiconductor layer may be ZnO, In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x , Sn x Ga x Zn x O x , ZnN, ZnS, ZnF, ZnI, ZnCl, ZnSe, and ZnTe.
In the present invention, the Zn-undoped semiconductor layer may include at least one of Si, B-doped Si, P-doped Si, GaAs, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaN, GaSb, InP, InAs, (Cyanide), InSb, CdS, CdSe, CdTe, PbTe, PbS, PbSe, FTTF pentacene, FTTF, BP2T, polythiophene, polyacetylene, P3AT, PTV, P3HT, TCNQ, C 60 , TCNNQ, NTCDA, PTCDA, F 16 -CuPc, aw-DFH-6T, NTCDI-C8F, NTCDI-C 8 F, NTCDI-C 8 F, NTCDI-C 8 H and PTCDI-C 8 H, but the present invention is not limited thereto.
In the present invention, the insulator layer may include at least one of Al x O x , Si x O x , Si x N x , Hf x O x , Y x O x , Mg x O x , Ca x O x , Sr x O x , Ta x O x , Ba x O x , La x O x and Ti x O x , or one or more compounds selected from the group consisting of PVP, PMMA, PI, P4VP, PVA or SAIT.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention. Such variations and modifications are intended to be within the scope of the appended claims.
Example 1: Preparation of diodes
ITO (Indium Tin Oxide) was formed on a glass substrate using a sputtering method to form a 100 nm thick non-doped conductor layer and then heat-treated on a hot plate at 300 ° C for 1 hour. Thereafter, an insulator layer having a thickness of 30 nm was formed with Al 2 O 3 using ALD (atomic layer deposition). Finally, a conductor layer (circular shape with a radius of 750 micrometer) doped with Zn in a thickness of 100 nm was formed with ZnInSnO using a sputterer and hot plate heat treatment was performed at 300 캜 for 1 hour to fabricate a diode having the structure shown in Fig. 1 .
For the diode according to the present embodiment, an IV measurement device (Agilent 4155B) was used to confirm whether the current passed through the diode. As a result, it has been confirmed that a positive voltage is applied to the ITO electrode and a negative voltage is applied to the ZnInSnO electrode, and in the opposite case, the current is not passed. From this, , That is, diode characteristics.
Example 2: Preparation of diodes
A Zn-doped conductor layer was formed on the glass substrate by sputtering with ZnInSnO to a thickness of 50 nm and heat-treated at 300 ° C for 1 hour. Then, a 100 nm thick insulator layer was formed by PVP (Poly Vinyl Pyrrolidone) using a solution process, and heat treatment was performed at 200 ° C for 1 hour. Thereafter, a Zn-doped semiconductor layer doped with ZnO to a thickness of 20 nm was formed using a sputterer, and then heat-treated at 200 ° C. Then, 30 nm Zn-doped conductor layer was formed with InZnO using ALD and heat treatment was performed at 100 ° C. Thereafter, a conductor layer (circular shape with a radius of 750 micrometer) doped with Zn in a thickness of 50 nm with ZnInO was formed by sputtering and heat treatment was performed at 200 캜 to fabricate a diode having the structure shown in Fig.
For the diode according to the present embodiment, an IV measurement device (Agilent 4155B) was used to confirm whether the current passed through the diode. As a result, it was confirmed that a positive voltage was applied to the ZnInSnO electrode and a negative voltage was applied to the ZnInO electrode, and in the opposite case, the current was not passed. From this, it was confirmed that the current rectification function , That is, diode characteristics.
Example 3: Preparation of diodes
In ZnO, a conductor layer doped with Zn was formed to a thickness of 50 nm on a glass substrate by using a sputter, and heat treatment was performed at 300 캜. Then, a 30 nm-thick Zn-doped semiconductor layer was formed with ZnO using a sputterer, and then heat-treated at 200 ° C. Then, an insulator layer having a thickness of 100 nm was formed with SiN x by using chemical vapor deposition (CVD), and then heat treatment was performed at 300 ° C. Thereafter, a conductor layer doped with Zn with a thickness of 50 nm was formed with InZnO using a sputterer, and heat treatment was performed at 100 캜. Thereafter, a 50 nm thick undoped conductor layer (circular shape with a radius of 750 micrometer) was formed with Al using a thermal evaporator to fabricate a diode having the structure shown in FIG.
For the diode according to the present embodiment, an IV measurement device (Agilent 4155B) was used to confirm whether the current passed through the diode. As a result, it was confirmed that a positive voltage was applied to the InZnO and a negative voltage to the Al electrode, and in the opposite case, the current was not passed. From this, the current rectification operation was performed at about -80 V to 80 V, That is, the diode characteristics were confirmed.
Example 4: Preparation of diodes
Using a thermal evaporator, a conductor layer of Zn-free doping with Cu was formed on the glass substrate to a thickness of 50 nm. Thereafter, an insulator layer having a thickness of 100 nm was formed with SiO x by CVD. Thereafter, a Zn-doped semiconductor layer doped with ZnO was formed to a thickness of 20 nm by sputtering, and the resultant structure was heat-treated at 150 ° C. Thereafter, a conductor layer (a circular shape with a radius of 750 micrometers) not doped with Zn by Au was formed to a thickness of 30 nm by using a thermal evaporator to fabricate a diode having the structure shown in FIG.
For the diode according to the present embodiment, an IV measurement device (Agilent 4155B) was used to confirm whether the current passed through the diode. As a result, it has been confirmed that a positive voltage is applied to Cu and a negative voltage is applied to Au electrode, and in the opposite case, no current is passed. From this, That is, the diode characteristics were confirmed.
Example 5: Fabrication of diodes
Using a thermal evaporator, a conductor layer of Zn-doped with Al was formed on the glass substrate to a thickness of 20 nm. Thereafter, a conductor layer in which Zn was not doped with Ti was formed to a thickness of 30 nm using a thermal evaporator. A semiconductor layer doped with Zn was formed to a thickness of 30 nm using SnZnO as a sputter, and then heat treatment was performed at 150 캜. Thereafter, a 100 nm thick insulator layer was formed with HfO using ALD and heat treatment was performed at 150 ° C. Then, a Zn-doped semiconductor layer doped with ZnO to a thickness of 50 nm was formed using a sputterer, and then heat-treated at 100 ° C. Thereafter, a conductor layer doped with Zn with a thickness of 30 nm was formed with InGaZnO using a sputterer, and heat treatment was performed at 100 캜. Thereafter, a non-doped conductor layer (circular shape with a radius of 750 micrometers) of 50 nm in thickness was formed with Cu by using a thermal evaporator to fabricate a diode having the structure shown in FIG.
For the diode according to the present embodiment, an IV measurement device (Agilent 4155B) was used to confirm whether the current passed through the diode. As a result, it has been confirmed that a positive voltage is applied to Al and a negative voltage is applied to the Cu electrode, and in the opposite case, the current is not passed. From this, the current rectifying action is performed at about -50 V to 50 V, That is, the diode characteristics were confirmed.
Example 6: Preparation of diodes
Using a thermal evaporator, a conductor layer of Zn-doped with Al was formed on the glass substrate to a thickness of 50 nm. Thereafter, an insulator layer was formed to a thickness of 30 nm using AlO using a sputter. Then, a 5 nm thick Zn-doped semiconductor layer was formed with ZnO using a sputterer, and heat treatment was performed at 200 ° C for 5 minutes. Then, a conductor layer doped with Zn by 10 nm in thickness was formed with InZnSnO using a sputterer, and heat treatment was performed at 200 ° C for 5 minutes. Then, a Zn doped
For the diode according to the present embodiment, an IV measurement device (Agilent 4155B) was used to confirm whether the current passed through the diode. As a result, it has been confirmed that a positive voltage is applied to Al and a negative voltage is applied to the InZnSnO electrode, and in the opposite case, no current is passed. From this, That is, the diode characteristics were confirmed.
Description of the Related Art [0002]
1: Zn-doped or undoped conductor layer
10: Zn-doped conductor layer
11: Zn-doped or undoped conductor layer or semiconductor layer
20, 21: Zn-doped conductor layer or semiconductor layer
30: insulator layer
40: Zn-doped or undoped conductor layer
Claims (18)
A Zn-doped conductor layer,
An insulator layer formed in contact with the Zn-doped conductor layer, and
A Zn-doped or undoped conductor layer formed in contact with the insulator layer,
≪ / RTI >
Wherein the substrate is selected from the group consisting of a glass substrate, a plastic substrate, a Si substrate, and a substrate composed of carbon.
Wherein a Zn-doped conductor layer or a non-doped conductor layer or a semiconductor layer is further formed between the Zn-doped conductor layer and the insulator layer.
Wherein a Zn-doped or undoped conductor layer or a semiconductor layer is further formed between the insulator layer and the Zn-doped or undoped conductor layer.
The Zn-doped conductor layer may include at least one of Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, A conductive polymer and a compound containing at least one selected from the group consisting of Zn x O x , In x Zn x O x , In x Ga x Zn x O x , and Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x, or Sn x Ga x Zn x O x .
The insulation layer is Al x O x, Si x O x, Si x N x, Hf x O x, Y x O x, Mg x O x, Ca x O x, Sr x O x, Ta x O x, Ba x O x , La x O x, and Ti x O x , or one or more compounds selected from the group consisting of PVP, PMMA, PI, P4VP, PVA, or SAIT.
The Zn-undoped conductor layer may be formed of at least one of Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Pb, Bi, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Ti, Pb, Ag, Cd, In, Sn, Sb, Cs, Ba, A conductive polymer, and a conductive polymer.
The Zn-doped semiconductor layer may include at least one of ZnO, In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x , and Sn wherein the first electrode is formed of a compound selected from the group consisting of ZnS, x Ga x Zn x O x , ZnN, ZnS, ZnF, ZnI, ZnCl, ZnSe and ZnTe.
The Zn-doped semiconductor layer may include one or more of Si, B-doped Si, P-doped Si, GaAs, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaN, GaSb, InP, InAs, InSb, , CdSe, CdTe, PbTe, PbS, PbSe, alpha-sexy thiophene, CuPc, aw-DH6T, bis (benzodithiophene), bis (dithienothiophene), dihexyl anthradithiophene, FTTF pentacene , FTTF, BP2T, polythiophene, polyacetylene, P3AT, PTV, P3HT, TCNQ, C 60, TCNNQ, NTCDA, PTCDA, F 16 -CuPc, aw-DFH-6T, NTCDI-C8F, NTCDI-C 8 F, NTCDI-C 8 F, NTCDI- C 8 H and a diode, characterized in that is formed of a compound selected from the group consisting of PTCDI-C 8 H.
Zn doped or undoped conductor layers,
A Zn-doped conductor layer or a semiconductor layer formed by contacting the Zn-doped or undoped conductor layer,
An insulator layer formed by contacting the Zn-doped conductor layer or the semiconductor layer, and
A Zn-doped or undoped conductor layer formed in contact with the insulator layer,
≪ / RTI >
Wherein the substrate is selected from the group consisting of a glass substrate, a plastic substrate, a Si substrate, and a substrate composed of carbon.
A conductive layer or a semiconductor layer doped with or doped with Zn is formed between the Zn-doped or undoped conductor layer and the Zn-doped conductor layer or the semiconductor layer. The diode.
Wherein a conductor layer or a semiconductor layer doped with or doped with Zn is formed between the insulator layer and the Zn doped or undoped conductor layer in one layer or repeatedly in multiple layers.
The Zn-doped conductor layer may include at least one of Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, A conductive polymer and a compound containing at least one selected from the group consisting of Zn x O x , In x Zn x O x , In x Ga x Zn x O x , and Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x, or Sn x Ga x Zn x O x .
The insulation layer is Al x O x, Si x O x, Si x N x, Hf x O x, Y x O x, Mg x O x, Ca x O x, Sr x O x, Ta x O x, Ba x O x , La x O x, and Ti x O x , or one or more compounds selected from the group consisting of PVP, PMMA, PI, P4VP, PVA, or SAIT.
The Zn-undoped conductor layer may be formed of at least one of Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Pb, Bi, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Ti, Pb, Ag, Cd, In, Sn, Sb, Cs, Ba, A conductive polymer, and a conductive polymer.
The Zn-doped semiconductor layer may include at least one of ZnO, In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x , and Sn wherein the first electrode is formed of a compound selected from the group consisting of ZnS, x Ga x Zn x O x , ZnN, ZnS, ZnF, ZnI, ZnCl, ZnSe and ZnTe.
The Zn-doped semiconductor layer may include one or more of Si, B-doped Si, P-doped Si, GaAs, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaN, GaSb, InP, InAs, InSb, , CdSe, CdTe, PbTe, PbS, PbSe, alpha-sexy thiophene, CuPc, aw-DH6T, bis (benzodithiophene), bis (dithienothiophene), dihexyl anthradithiophene, FTTF pentacene , FTTF, BP2T, polythiophene, polyacetylene, P3AT, PTV, P3HT, TCNQ, C 60, TCNNQ, NTCDA, PTCDA, F 16 -CuPc, aw-DFH-6T, NTCDI-C8F, NTCDI-C 8 F, NTCDI-C 8 F, NTCDI- C 8 H and a diode, characterized in that is formed of a compound selected from the group consisting of PTCDI-C 8 H.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150124055A KR20170027904A (en) | 2015-09-02 | 2015-09-02 | Diode |
| PCT/KR2015/009284 WO2016036156A1 (en) | 2014-09-05 | 2015-09-03 | Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150124055A KR20170027904A (en) | 2015-09-02 | 2015-09-02 | Diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170027904A true KR20170027904A (en) | 2017-03-13 |
Family
ID=58412041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150124055A KR20170027904A (en) | 2014-09-05 | 2015-09-02 | Diode |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20170027904A (en) |
-
2015
- 2015-09-02 KR KR1020150124055A patent/KR20170027904A/en not_active Application Discontinuation
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