KR20160020696A - Transparent conductive film where multi-layer thin film is coated - Google Patents

Transparent conductive film where multi-layer thin film is coated Download PDF

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KR20160020696A
KR20160020696A KR1020140105706A KR20140105706A KR20160020696A KR 20160020696 A KR20160020696 A KR 20160020696A KR 1020140105706 A KR1020140105706 A KR 1020140105706A KR 20140105706 A KR20140105706 A KR 20140105706A KR 20160020696 A KR20160020696 A KR 20160020696A
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layer
oxide
substrate
thin film
oxide layer
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KR1020140105706A
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강석환
나종복
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(주) 유니플라텍
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G02B1/116—Multilayers including electrically conducting layers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Human Computer Interaction (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to a transparent conductive film of multi-layered thin-film structure having low surface resistance and high phototransmission and, more specifically, to a transparent conductive film coated with multi-layered thin films having improved phototransmission and low surface resistance by improving the bonding force between a substrate and a film layer by plasma ion implantation to the substrate; laminating one to five oxide layers, one metal layer and one to five oxide layers on the substrate; and adjusting the ratio of the thickness of one of the oxide layers to the thickness of the other of the oxide layers to be in a range of 1:1.1 to 1:3.5. An oxide layer or metal layer laminated using a sputtering method has a disadvantage of high resistance and low phototransmission since its structure is not dense. According to the present invention, sintering by irradiating with the white light of a xenon lamp on at least one or more layers of the oxide layers or metal layers in order to increase the structure density, thereby lowering the surface resistance drastically and increasing the phototransmission significantly. Such transparent conductive film is necessarily used in an electronic device, such as a flat display device, solar cell, and transparent touch panel.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a transparent conductive film having a multilayer thin film structure,

The present invention relates to a transparent conductive film of a multilayer thin film structure having a low surface resistance and high light transmittance. More particularly, the present invention relates to a method of forming a thin film layer on a substrate by performing plasma ion implantation on the substrate to improve bonding force between the substrate and the thin film layer, laminating one to five oxide layers on the substrate, laminating one metal layer, The present invention relates to a transparent conductive film coated with a multilayer thin film having improved light transmittance and reduced surface resistance by controlling the ratio of the thickness of one oxide layer to the thickness of another oxide layer. More particularly, the present invention relates to a transparent conductive film having remarkably reduced surface resistance and significantly improved light transmittance by irradiating and sintering at least one layer of an oxide layer or a metal layer with a white flash with a xenon lamp .

BACKGROUND ART [0002] Recent developments in the field of optoelectronics have been accompanied with an increasing demand for a transparent conducting film having high light transmittance and electrical conductivity. Such a transparent conductive film is essentially used for electronic devices such as a flat panel display device, a solar cell, and a transparent touch panel.

Transparent conductive films are fabricated by: ① low resistivity (less than 10 -5 Ωcm), ② high light transmittance (transmission of more than 85% at 550 nm), ③ IEC 1646 standard (85 ° C, 85% (heat resisting resistance) in a high temperature and high humidity environment that can withstand a high temperature and high humidity environment (eg, Solar Energy Materials and Solar Cells, 75, 47 (2003) The stability of the transparent conductive film in the bending test, and the like.

Currently, a transparent conductive film satisfying the above conditions is formed of indium tin oxide (ITO) (hereinafter abbreviated as ITO), aluminum-doped zinc oxide (AZO, Aluminum doped Zinc Oxide (IZO), Indium Zinc Oxide (IZO), and the like. In particular, ITO has a low resistivity of less than 10 -4 Ωcm and is widely used because its transmittance is about 85% in the visible light region. However, due to the increase in price due to the scarcity of indium (In), which is a raw material, industrial use is limited. Therefore, a new transparent conductive film material having a low surface resistance and excellent light transmittance has been studied. On the other hand, in the case of flexible organic light emitting diodes (OLEDs), which have been attracting attention in recent years, the surface resistance is 10 Ω / square or less, and in the case of a plasma display panel (PDP) Since the resistance should be less than 100 Ω / square, a material with suitable characteristics is required.

Conventional techniques for providing a transparent conductive film in response to this demand include "a method for manufacturing a transparent conductive film coated with an AZO / Ag / AZO multilayer thin film" (Korean Patent Laid-Open No. 10-2010-0089962, (Japanese Unexamined Patent Application Publication No. 2001-052529, Patent Document 3), " Method for producing conductive film base material " (Korean Patent Laid-open Publication No. 10-2011-0120120 and Patent Document 2), "Transparent conductive thin film laminate material" A high transparency of a thin film structure, a low-resistivity transparent electrode and a manufacturing method thereof "(Korean Patent No. 10-1357044, Patent Document 4). However, this conventional technique is effective in improving the light transmittance and improving the surface resistance by limiting the ratio of the thickness of one of the oxide layers to the thickness of the other oxide layer among the oxide layers of the transparent conductive film of the multilayer thin film structure to a specific range It is not a skill about lowering.

Conventional techniques in which inorganic layers (oxide layers) having different refractive indexes are sequentially disposed in the inorganic multilayered coating to prevent reflection to improve the light transmittance include " conductive antireflection multilayer coatings " Patent WO < RTI ID = 0.0 > 1999/22253 < / RTI > In a related art similar to the above, a technology relating to a transparent conductive laminated film produced by laminating a high refractive index layer, a low refractive index layer and a transparent conductive thin film layer in this order on a substrate made of a transparent plastic is called " transparent conductive laminated film " Open Patent WO 2010/140275, Patent Document 6). In addition, " a transparent conductive film having a multilayer structure and a method for manufacturing the same " (Korean Patent Laid-open Publication No. 10-2011-0125370 and Patent Literature 7) discloses a method of sequentially coating conductive oxides of different kinds, A second coating layer of a high refractive index, and a third coating layer of a high refractive index, thereby providing a transparent conductive film having excellent light transmittance. However, this conventional technique is merely a technique for improving the light transmittance by imparting an antireflection function by laminating layers having different refractive indexes. In order to improve the light transmittance of the oxide layer of any of the oxide layers of the transparent conductive film of the multilayer thin film structure, It is not a technique to improve the light transmittance and lower the surface resistance by limiting the thickness ratio of the layer to a specific range.

 A transparent conductive laminated film, a method for producing the same, and a touch panel including the same (Korea Patent No. 10-1045026, Patent Document 8) disclose a laminated film including a two- layer structure in which a refractive index and a thickness are adjusted on an optical transparent substrate It provides a sieve. Specifically, an optical transparent substrate; A first laminate stacked on said optically transparent substrate using plasma-enhanced chemical vapor deposition (PECVD) to a thickness of 10 nm to 300 nm, said first laminate comprising an inorganic oxide and having a refractive index of 1.3 to 2.5; A second laminate stacked on the first laminate by a plasma-enhanced chemical vapor deposition method to a thickness of 10 nm to 300 nm and including an inorganic oxide different from the inorganic oxide contained in the first laminate; And a transparent conductive layer laminated on the second laminate to a thickness of 10 to 100 nm. The thicknesses of the first laminate and the second laminate which are oxide layers are in the same numerical range and the thickness range of the transparent conductive layer laminated on the second laminate differs from the thickness range of the first and second laminate.

This is different from the technique of the present invention in which the light transmittance is improved by limiting the ratio of the thickness of one oxide layer to the thickness of another oxide layer to a specific range. As described above in Patent Document 5, Patent Document 6, and Patent Document 7, the effect of improving the light transmittance in Patent Document 8 is that the first and second laminated bodies are formed using oxides having different refractive indexes, But is not limited to the range of the thickness ratio (ratio) of the oxide layer.

A multilayer electronic device including a indium-free transparent conductive film with improved contact resistance and a method for manufacturing the same (Korean Patent No. 10-0974884, Patent Document 9) provides a multilayer electronic device, the structure of which is as follows. Board; A transparent conductive film in which an oxide layer and a metal layer are alternately stacked on a substrate, the upper and lower layers being oxide layers; And an upper functional layer formed on the transparent conductive film. The upper oxide layer is composed of two or more layers such as a first upper oxide layer and a second upper oxide layer. The thickness of the first upper oxide layer corresponds to 70 to 90% of the total thickness of the upper oxide layer, 2 The thickness of the top oxide layer corresponds to 10 to 30% of the total thickness of the top oxide layer. The reason why the upper oxide layer formed on the metal layer is divided into two or more layers such as the first upper oxide layer and the second upper oxide layer and the thicknesses thereof are different are as follows. The first upper oxide layer is made of an oxide having a low corrosion resistance but a low specific resistance, but is formed to have a thickness corresponding to 70 to 90% of the total thickness of the upper oxide layer, thereby lowering the resistance. The second upper oxide layer formed on the first upper oxide layer uses an oxide having a high specific resistance and a high corrosion resistance but has a thickness corresponding to 10 to 30% of the total thickness of the upper oxide layer, thereby minimizing an increase in specific resistance So as to have corrosion resistance. Such a conventional technique is only a technique for using a low resistance material and a corrosion-resistant material to divide the upper oxide layer constituting the uppermost layer into two or more layers, respectively. In the oxide layer of any one of the oxide layers of the transparent conductive film of the multilayer thin film structure It is not a technique for improving the light transmittance and lowering the surface resistance by limiting the ratio of the thickness of the other oxide layer to the thickness of the layer to a specific range.

The multilayer thin film type transparent conductive film and the multilayer thin film type transparent conductive film production system manufactured by the manufacturing method and the manufacturing method of the multilayer thin film-coated transparent conductive film invented by the inventor of the present invention (Korean Patent Laid- 0131940, Patent Document 10) discloses a light-emitting device comprising a substrate made of a low refractive index silicon dioxide (SiO 2 ) layer; A high refractive index of titanium dioxide (TiO 2) layer; A first AZO (Aluminum Doped Zinc Oxide) layer; A silver (Ag) layer; A second AZO layer; and a transparent conductive film formed in this order. A refractive index different from the silicon dioxide (SiO 2) layer and a titanium dioxide (TiO 2) by laminating a layer to impart an anti-reflection function, as well as to increase the light transmittance, the silicon dioxide (SiO 2) layer of the titanium dioxide (TiO 2) Layer is formed to have a thickness twice or more than that of the light-transmitting layer. There is a transparent conductive film is composed of silicon dioxide (SiO 2) layer / titanium dioxide (TiO 2) layer / claim 1 AZO layer / silver (Ag) layer / second 2 AZO layer on the substrate, silicon dioxide (SiO 2) layer and (TiO 2 ) layer, that is, an oxide layer made of different materials while being in contact with each other. However, in the present invention, two oxide layers made of the same material are formed in different oxide layers The present invention is an advanced technique which is completely different from the conventional technology in that the light transmittance is improved by limiting the thickness ratio to a specific range even when the other metal layer is spaced apart. And silicon dioxide in the art (SiO 2) layer and a titanium dioxide (TiO 2) reason for successively stacking a layer of silicon dioxide (SiO 2) layer, and titanium dioxide, as described above (TiO 2) layer having a refractive index To prevent reflection and to increase the light transmittance by successively stacking two oxide layers having different refractive indices.

The transparent conductive film must meet various requirements such as low surface resistance and high light transmittance. The materials that make up the oxide layer must be selected to meet these requirements. Depending on the type of oxide, electrical properties such as electrical conductivity, electrical properties such as resistivity, refractive index, optical properties such as light transmittance, thermal conductivity, acid resistance, corrosion resistance, heat resistance and heat resistance, and flexibility are different. Therefore, when a transparent conductive film is prepared by selecting a material satisfying one of the requirements, the other requirements can not be satisfied. For example, in the case of manufacturing a transparent conductive film using ITO (Indium Tin Oxide), when the thickness of the ITO layer is increased to lower the surface resistance, the light transmittance is decreased and the thickness of the ITO layer is decreased to improve the light transmittance. The requirement of low surface resistance and high light transmittance can not be satisfied at the same time. In order to lower the resistance of the transparent conductive film, a metal layer is introduced. The thicker the metal layer, the lower the surface resistance but the lower the light transmittance.

In addition, depending on the type of the material constituting the oxide layer, the properties such as refractive index, acid resistance, corrosion resistance, and economical efficiency may vary. Therefore, when considering such characteristics, the selection of the material is further restricted. As a result, There are many technical difficulties in manufacturing a transparent conductive film satisfying simultaneously.

Korean Patent Publication No. 10-2010-0089962 (Aug. 13, 2010) Korean Patent Publication No. 10-2011-0120120 (2011.11.03) Japanese Patent Application Laid-Open No. 2001-052529 (Feb. 23, 2001) Korean Registered Patent No. 10-1357044 (2014.01.23) International Publication No. WO 1999/22253 (May 05, 1999) International Publication No. WO 2010/140275 (December, 2010) Korean Patent Publication No. 10-2011-0125370 (2011.11.21) Korean Patent No. 10-1045026 (June 22, 2011) Korean Patent No. 10-0974884 (Aug. 3, 2010) Korean Patent Publication No. 10-2013-0131940 (December 31, 2013)

A problem to be solved by the present invention is to provide a transparent conductive film having low surface resistance and high light transmittance even when various oxides having various properties are selected and used. The oxide layer, the metal layer, and the like constituting the transparent conductive film can be formed by sputtering or the like, but the structure thereof is not dense and there is a technical limitation in lowering the surface resistance and increasing the light transmittance. By solving these technical difficulties, the performance of the transparent conductive film is greatly improved.

The transparent conductive film provided in the present invention is formed in a multilayer thin film structure. One to five oxide layers are laminated on a transparent substrate, one metal layer is formed thereon, and one to five oxide layers are laminated thereon to prepare a transparent conductive film. The substrate is previously implanted with ions to allow the oxide layer and the substrate to be strongly bonded in the subsequent process of stacking the oxide layers.

By adjusting the ratio of the thickness of one of the oxide layers to the thickness of the other oxide layer among the oxide layers to be laminated in the range of 1: 1.1 to 1: 3.5, a transparent conductive film having a low surface resistance and a high light transmittance The present invention has been completed based on many experiments and studies.

The oxide layer or the metal layer stacked by sputtering has difficulty in lowering the surface resistance and increasing the light transmittance because the structure is not dense. A number of methods have been studied and a lot of experiments have been intensively carried out in order to develop a technique of compacting the structure of the sputtered oxide layer or the metal layer. As a result, a flash light sintering method has been developed and the present invention has been completed. At least one layer of the oxide layer or the metal layer is irradiated with a white flash with a xenon lamp and is irradiated at a short time in microseconds to milliseconds using a high voltage pulse power supply When the high temperature is generated, the surface is instantaneously sintered, the texture is dense and the density is increased, so the surface resistance is greatly lowered and the light transmittance is greatly increased.

According to the present invention, by limiting the ratio of the thickness of one oxide layer to the thickness of another oxide layer in the transparent conductive film of the multilayer thin film structure to 1: 1.1 to 1: 3.5, the light transmittance can be increased and the surface resistance Can be lowered. Further, the oxide layer or the metal layer is sintered by irradiating a white flash with a xenon lamp to densify the structure, thereby greatly reducing the surface resistance and greatly increasing the light transmittance.

1 is a block diagram of an apparatus for producing a transparent conductive film of a multilayer thin film structure of the present invention.
2 is a schematic view showing an ion implantation chamber for producing a multilayer thin film type transparent conductive film of the present invention.
3 is a schematic view showing a sputtering chamber for producing a multilayer thin film transparent conductive film of the present invention.
4 is a schematic view showing a multilayer thin film type transparent conductive film formed in the order of a substrate / one oxide layer / metal layer / one oxide layer, which is an embodiment of the present invention.
5 is a schematic view showing a multilayer thin film transparent conductive film formed in the order of a substrate / three oxide layers / a metal layer / two oxide layers, which is another embodiment of the present invention.
6 is a schematic view showing a multilayer thin film transparent conductive film formed in the order of a substrate / five oxide layers / metal layer / five oxide layers, which is another embodiment of the present invention.

A process for producing a transparent conductive film having a multilayer thin film structure in the present invention is as follows. A necessary number of oxide layers are stacked in the order of pretreatment of the substrate, ion implantation on the substrate, 1 to 5 oxide layer stacking, metal layer stacking, 1 to 5 oxide layer stacking, and the like.

Hereinafter, the present invention will be described in detail with reference to the drawings.

1 is a block diagram illustrating a manufacturing system of a multilayer thin film transparent conductive film according to an embodiment of the present invention. As shown, the system for producing a transparent conductive film of the present invention comprises a pretreatment chamber 10 with an unwinder, an ion implantation chamber 20, a sputtering chamber 30, a rewinder, (40).

The pretreatment chamber 10 is a chamber for gas sputtering and cleaning of the substrate.

In the pretreatment chamber 10, the plasma is in a vacuum state. The argon gas is supplied at a flow rate of 15O SCCM (Standard Cubic Centimeter per Minute) under the initial vacuum 2X10 -5 TORR state, and the RF power supply or RF power supply The dry gas sputtering cleaning is performed by forming a plasma in the vacuum chamber by applying an electric charge of 200 to 800 V using a DC-POWER SUPPLY device. At this time, DC PLUS POWER can be used for more powerful power cleaning. The power (POWER) at this time is subjected to a continuous plasma dry gas sputtering cleaning with a load of about 800 to 1000V.

The ion implantation chamber 20 is a chamber for implanting ions into the substrate, which will be described in detail in Fig.

The sputtering chamber 30 is a chamber for forming an oxide layer and a metal layer, which will be described in detail in Fig.

2 is a view for explaining an ion implantation chamber for producing the multilayer thin film type transparent conductive film of the present invention. As shown, the ion implantation chamber 20 may comprise a sputtering gun 27 for irradiating a sputtering source including a roller 21, a grid 23, a heater 25 and a first sputtering source . Plasma ions are implanted through a Plasma Source Ion Implantation (PSSI) device (not shown). In the plasma ion implantation process, a grid 23 made of stainless steel is mounted between a sputtering gun 27 and a substrate, which is a target shown in a straight line in contact with two rollers 21 in Fig. By providing such a grid 23, it is possible to prevent an arcing phenomenon caused by the concentration of an electric field on a sharp surface, which is the greatest disadvantage of plasma ion implantation. A negative bias (-BIAS) is applied to the grid 23 to accelerate the ions, after which a cooling roll (not shown) may be driven to prevent overheating of the coating material.

The substrate cleaned in the pretreatment chamber 10 is moved to the ion implantation chamber 20. [ The ions from the sputtering gun 27 are accelerated by the grid 23 and are implanted with the sputtering into the target substrate. Ion implantation is a method in which high-speed ions are generated by using an ion beam or a high voltage bias to impinge on the surface of a target. Ion implantation is ICP (Inductively Coupled Plasma), hot filament (Hot Filament), microwave (Microwave) C + and the like, N +, N 2 +, Si +, H +, NH 3 +, Ar +, O 2 + to generate the ions in the gas phase, such as such as gas ion implantation with the arc (arc), sputtering (sputter) using, for example, Ti +, Al +, Cr + , Cu +, Ni + to hit the target surface, And metal ion implantation for generating and injecting metal ions. And mixed ion implantation which simultaneously injects gas and metal ions.

(Usually several tens kV) of negative (-) charge in the form of pulses is applied to the target substrate, and a gas such as nitrogen or argon is injected and a high frequency (usually several hundred kHz) power . Gas ions such as nitrogen or argon, which are ionized due to high frequencies, have positive (+) charges and accelerate to the substrate surface having negative charges. The accelerated gas ions impinge on the substrate surface and penetrate into the substrate. In the case of metal ion implantation, metal ions generated from a metal plasma source are accelerated to the substrate surface to implant metal ions. The mixed ion implantation is performed by simultaneously operating a gas plasma source and a metal plasma source to generate mixed ions of gas and metal, and then mixed ions are injected into the surface of the substrate.

Gas for the gas ion implantation of argon (Ar), ammonia (NH 3), nitrogen (N 2), hydrogen (H 2), helium (He), oxygen (O 2), acetylene gas (C 2 H 2 ), Methane (CH 4 ), silane (SiH 4 ), and hexamethyldisiloxane (HMDSO). As the metal for the metal ion implantation, silver (Ag), copper (Cu), palladium (Pd), magnesium (Mg), gold (Au), platinum (Pt), iron (Fe) (Ni), Mn, Zn, Sn, Zr, W, Co, Ti, Nb, Mo, , Antimony (Sb), tantalum (Ta), vanadium (V), chromium (Cr), iridium (Ir), bismuth (Bi) and alloys thereof.

Ion implantation into the substrate is very important for the following reasons. Since the transparent conductive film of the multilayer thin film structure is laminated with the thin film, the adhesion between the substrate and the thin film is very important. This is because if the adhesive force is weak, the thin film is separated from the substrate and the transparent conductive film loses its function. Therefore, ions are injected into the substrate to form a mixed layer in which the ions and the substrate are mixed in the surface layer of the substrate, and the oxide layer is laminated thereon, so that the bonding force between the substrate and the oxide layer is greatly increased.

3 is a view for explaining a sputtering chamber for producing the multilayer thin film type transparent conductive film of the present invention. As shown, the sputtering chamber 30 has three sputtering zones formed by three sputtering guns 37a, 37b and 37c on a substrate which is moved by a plurality of rollers 31. As shown in Fig. That is, a first sputtering gun 37a including a first sputtering source and a second sputtering source, a second sputtering gun 37b including a third sputtering source, and a third sputtering gun 37c including a fourth sputtering source ). If necessary, a sputtering gun such as a fourth sputtering gun, a fifth sputtering gun, or the like may be additionally provided.

The substrate to which the ion implantation is performed in the ion implantation chamber 20 is moved to the sputtering chamber 30. Here, one oxide layer and one metal layer are stacked or two oxide layers are stacked by a first sputtering gun 37a including a first sputtering source and a second sputtering source. And an oxide layer or a metal layer is laminated by a second sputtering gun 37b including a third sputtering source. At this time, the initial vacuum degree is 2 × 10 -5 TORR, the working pressure (working pressure) is 3.7 × 10 -3 TORR, and the power is 1 KW as RF power.

4 is a view for explaining a multilayer thin film transparent conductive film formed in this order of a substrate / one oxide layer / metal layer / one oxide layer. A first sputtering gun 37a including a first sputtering source and a second sputtering source is disposed on the substrate 100 to which the plasma ion is injected in the ion implantation chamber 20 by pretreatment in the pretreatment chamber 10, The layer 201 and the metal layer 300 are laminated. And the second oxide layer 202 is stacked with the second sputtering gun 37b including the third sputtering source.

Fig. 5 is a view for explaining a multilayer thin film type transparent conductive film formed in this order of a substrate / three oxide layers / a metal layer / two oxide layers. A first sputtering gun 37a including a first sputtering source and a second sputtering source is disposed on the substrate 100 to which the plasma ion is injected in the ion implantation chamber 20 by pretreatment in the pretreatment chamber 10, The layer 201 and the second oxide layer 202 are laminated. And the third oxide layer 203 is stacked with the second sputtering gun 37b including the third sputtering source. And the metal layer 300 is stacked with the third sputtering gun 37c including the fourth sputtering source. And a fourth oxide layer 204 is stacked with a fourth sputtering gun (not shown) containing a fifth sputtering source. Finally, a fifth oxide layer 205 is deposited with a fifth sputtering gun (not shown) containing a sixth sputtering source.

6 is a view for explaining a multilayer thin film type transparent conductive film formed in this order of a substrate / five oxide layers / metal layer / five oxide layers. A first sputtering gun 37a including a first sputtering source and a second sputtering source is disposed on the substrate 100 to which the plasma ion is injected in the ion implantation chamber 20 by pretreatment in the pretreatment chamber 10, The layer 201 and the second oxide layer 202 are laminated. And the third oxide layer 203 is stacked with the second sputtering gun 37b including the third sputtering source. And the fourth oxide layer 204 is stacked with a third sputtering gun 37c containing a fourth sputtering source. And a fifth oxide layer 205 is stacked with a fourth sputtering gun (not shown) containing a fifth sputtering source. A metal layer 300 is stacked with a fifth sputtering gun (not shown) containing a sixth sputtering source. And a sixth oxide layer 206 is deposited with a fifth sputtering gun (not shown) containing a sixth sputtering source. In this manner, the seventh oxide layer 207, the eighth oxide layer 208, the ninth oxide layer 209, and the tenth oxide layer 210 are laminated.

Examples of the method for laminating the metal layer include a sputtering method in a plasma vacuum atmosphere, a method in which an ion implantation coating and a sputtering coating are performed in parallel. The deposition thickness of the metal layer is preferably 5 to 20 nm, more preferably 7 to 17 nm. When the metal layer is thinner than 5 nm, the metal tends not to be uniformly deposited. When the metal layer is thicker than 20 nm, the light transmittance tends to be greatly reduced.

A method of adjusting the thickness of the metal layer to a desired thickness is as follows. An oxide layer, for example, AZO (Aluminum-doped Zinc Oxide) is deposited on a silicon substrate, and a metal, for example, Ag, is deposited thereon. The cross section of the laminated thin film was observed by a transmission electron microscope (TEM) to confirm the thickness of the silver (Ag) thin film layer. Deposition time versus film thickness is shown after silver (Ag) is deposited with varying deposition time to control the thickness of the silver (Ag) film. The deposition time can be determined in order to form a metal thin film having a desired thickness from the relationship between the deposition time and the thin film thickness obtained through the preliminary experiment. In the case of metals other than silver (Ag), the thickness of the thin film can be controlled in the same manner.

The metal layer may be at least one selected from the group consisting of Ag, Cu, Pd, Mg, Au, Pt, Fe, Al, Ni, Mn, Zn, Sn, Zr, T, C, Ti, Nb, Mo, Sb, (Ta), vanadium (V), chromium (Cr), iridium (Ir), bismuth (Bi) and alloys thereof.

The oxide layer may be laminated by a physical vapor deposition (PVD) sputtering coating, a plasma enhanced chemical vapor deposition (PECVD) coating, a chemical vapor deposition (CVD) , CVD) coating and the like. The thickness of the oxide layer may be sufficient to suit the ordinary light transmittance, but it is preferably 10 to 200 nm. When the thickness of the oxide layer is too thin, the conductivity decreases. When the oxide layer is too thick, the transmittance decreases.

The method of adjusting the thickness of the oxide layer to a desired thickness is as follows. An oxide layer, for example, AZO (Aluminum-doped Zinc Oxide) is deposited on a silicon substrate and the cross-section of the deposited thin film is observed with a transmission electron microscope (TEM) to confirm the thickness of the AZO thin film layer. In order to control the thickness of the AZO thin film, the deposition time versus the thin film thickness is shown after depositing AZO while varying the deposition time. The deposition time can be determined in order to form a metal thin film having a desired thickness from the relationship between the deposition time and the thin film thickness obtained through the preliminary experiment. In the case of an oxide layer other than AZO, the thickness of the thin film can be adjusted in the same manner.

The ratio of the thickness of one of the oxide layers to the thickness of the other oxide layers in the oxide layers is preferably 1: 1.1 to 1: 3.5. When the thickness ratio is less than 1: 1.1 or exceeds 1: 3.5, the light transmittance is decreased.

The oxide layer may be formed of indium gallium zinc oxide (IGZO), aluminum doped zinc oxide (AZO), indium zinc oxide (IZO), indium tin oxide (ITO) ), zinc (ZnO), aluminum oxide (Al 2 O 3), tin oxide (SnO 2), silicon dioxide (SiO 2), titanium dioxide (TiO 2), niobium oxide (Nb 2 O 5), tungsten oxide ( WO), vanadium pentoxide (VO 5 ), and nickel oxide (NiO).

At least one layer of the oxide layer or the metal layers is irradiated with a white flash with a xenon lamp to be sintered. In this case, when the high-temperature pulse is sintered in a short period of microseconds to milliseconds using a high-voltage pulse power source, only the surface of the oxide layer and the metal layer is instantaneously heated to be sintered, Is not affected. The sintered oxide layer or the metal layer is dense and the density is high, so that the electrical conductivity is increased, the surface resistance is lowered, and the light transmittance is increased.

Devices for irradiating white flashes with a xenon lamp include Flash Lamp Annealing device (Model FLA-100AS) from Dresden Thin Film Technology, Germany. As a method of sintering by irradiating a white flash with a xenon lamp, high-temperature heat is generated and sintered in a short period of microseconds to milliseconds using a high-voltage pulse power supply .

The substrate may be an inflexible substrate such as a glass substrate, a quartz substrate, a silicon substrate, or a metal substrate, or may be a substrate made of polyethylene, polyether imide, polystyrene, polypropylene a flexible polymer substrate such as polypropylene, polyethersulfone, polyethyleneterephthalate, polycarbonate, polyimide, polyethylene naphthalate, and the like.

It is also desirable to apply a hard coating to the flexible polymer substrate. The hard coating layer serves to improve the surface hardness, and the hard coating agent is divided into the organic coating agent and the inorganic coating agent. As an organic coating agent, melamine, acryl, urethane and the like are used, and as an inorganic coating agent, a silicone system is a main species. An organic-inorganic hybrid coating agent obtained by reacting an organosilane coupling agent with a silicon-based inorganic material by using a sol-gel method is also widely used.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, these embodiments are merely examples for explaining the content and scope of the technical idea of the present invention, and thus the technical scope of the present invention is not limited or changed. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the technical idea of the present invention based on these examples.

Production of multilayer thin film type transparent conductive film formed in the order of [substrate 1] substrate / one oxide layer / metal layer / one oxide layer

1-1. Formation of the first oxide layer thin film

A flexible polyethersulfone substrate (thickness: 200 μm) having excellent thermal characteristics was cleaned and the surface of the substrate was cleaned using argon gas (Ar gas) in the pretreatment chamber 10. Thereafter, in the ion implantation chamber 20, argon Ions (Ar + ) were implanted. Silicon dioxide (SiO 2 ) was deposited in the sputtering chamber 30 at room temperature using an RF sputtering method. At this time, the thickness of the silicon dioxide (SiO 2 ) thin film was adjusted to be about 40 nm. The RF power applied to the target was 30 W, the working vacuum was maintained at 1.5 mTorr, the distance between the target and the substrate was about 10 cm, the sputtering gas was 40 sccm (standard cc / min) Argon gas (Ar gas) was used.

1-2. Metal layer thin film formation and flash sintering

(Dc power) of 30 W, a deposition pressure of 3 mTorr, an argon (Ar) gas flow rate of 40 sccm on a silicon dioxide (SiO 2 ) thin film formed by the above method using a copper (Cu) target in a sputtering chamber 30 A copper thin film having a thickness of 17 nm was deposited. Then, the copper film was placed at a distance of 30 cm from the xenon lamp emitting white light in the wavelength range of 380 nm to 950 nm, and the irradiation was carried out at a rate of 30 cm / min while irradiating with a irradiation energy of 2 J cm -2 for 3 milliseconds (Pulse) of irradiating the flash again after 10 milliseconds The copper thin film layer was flash-sintered.

1-3. Formation of the second oxide layer thin film

Subsequently, a thin film of indium tin oxide (ITO) is formed on the copper (Cu) Under the same conditions as in the formation of the first oxide layer thin film, except that the thickness of the indium tin oxide (ITO) thin film was adjusted to about 60 nm by varying the deposition time only.

1-4. Light transmittance and surface resistance

The light transmittance of the multilayer thin film prepared in Example 1 was measured using a spectrophotometer (Shimadzu UV2450, Japan) in a wavelength range of visible light of 300 to 800 nm, and the light transmittance was 92%. The surface resistance was measured with a surface resistance meter (4 PROBE EDTM Rc 2175), which was 7 Ω / square. The ratio of the thickness of the first oxide layer to the thickness of 40 nm of the second oxide layer to the thickness of 60 nm is 1: 1.5, and shows a high light transmittance of 92% and a low surface resistance of 7? / Square.

[Example 2] Preparation of multilayer thin film type transparent conductive film formed in this order of substrate / three oxide layers / metal layer / two oxide layers

2-1. Formation of the first oxide layer thin film

A flexible polyimide substrate (thickness: 150 μm) excellent in thermal characteristics was cleaned as a substrate, and the surface of the substrate was cleaned using argon gas (Ar gas) in the pretreatment chamber 10. Then, in the ion implantation chamber 20, Ions (Ni + ) were implanted. In the sputtering chamber 30, titanium dioxide (TiO 2 ) was deposited at room temperature using a DC sputtering method. At this time, the thickness of the titanium dioxide (TiO 2 ) thin film was adjusted to 10 nm. The DC power applied to the target was 30 W, the working vacuum was maintained at 1.5 mTorr, the distance between the target and the substrate was about 10 cm, the sputtering gas was 40 sccm (standard cc / min) Argon gas (Ar gas) was used.

2-2. Formation of the second oxide layer thin film and sintering

Aluminum-doped ZnO (Aluminum-doped Zinc Oxide) thin films were deposited on the titanium dioxide (TiO 2 ) thin films formed by the above method, and the thickness of the AZO thin films was adjusted to be 16 nm. At this time, the AZO target (2 inch diameter) was used by sintering the zinc oxide (ZnO) target doped with 2 wt% of aluminum (Al) at 1400 ° C. using a ceramic process. The RF power applied to the target was 30 W, the working vacuum was maintained at 1.5 mTorr, the distance between the target and the substrate was about 10 cm, the sputtering gas was 40 sccm (standard cc / min) An argon gas (Ar gas) was used. The AZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

2-3. Formation of the third oxide layer thin film and sintering

On the AZO thin film layer formed by the above method, the above-mentioned " 2-2. ITO (Indium Tin Oxide) thin film layer was formed by a method such as "formation of a second oxide layer thin film and sintering by flash", and the thickness was adjusted to 20 nm. The ITO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

2-4. Metal layer thin film formation and flash sintering

Using a silver (Ag) target in a sputtering chamber 30 on a ITO thin film layer formed by the above method, a silver thin film having a thickness of 9 nm was formed under conditions of a DC power of 30 W, a deposition pressure of 3 mTorr and an argon (Ar) gas flow rate of 10 sccm. (Ag) thin films were deposited. Then, the silver (Ag) thin film layer was subjected to flash light sintering in the same manner as in Example 1.

2-5. Formation of the fourth oxide layer thin film and sintering

On the silver (Ag) thin film layer formed by the above method, " 2-2. AZO thin film layer was formed in the same manner as in the formation of the second oxide layer thin film and the flash light sintering, but the thickness was adjusted to be 24 nm. The AZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

2-6. Formation of the fifth oxide layer thin film and sintering by flash

On the AZO thin film layer formed by the above method, " 1-1. (SiO 2 ) thin film layer was formed in the same manner as in the "formation of the first oxide layer thin film", and the thickness thereof was adjusted to be 35 nm. Then, a silicon dioxide (SiO 2 ) thin film layer was subjected to flash light sintering in the same manner as in Example 1.

2-7. Light transmittance and surface resistance

The light transmittance of the multilayer thin film prepared in Example 2 was measured by the same method as in Example 1, and the light transmittance was 91%. The surface resistance was measured with a surface resistance meter (4 PROBE EDTM Rc 2175), which was 8 Ω / square. The ratio of the thickness of the fourth oxide layer to the thickness of 20 nm of the third oxide layer is the lowest of 1: 1.2 and the ratio of the thickness of the first oxide layer to the thickness of the fifth oxide layer is 35 nm, Was the highest at 1: 3.5, and the thickness ratio (ratio) of the other oxide layers was a value of 1.2 to 3.5. Thus, the ratio of the thickness of the oxide layer is 1.2 to 3.5, and shows a high light transmittance of 91% and a low surface resistance of 8? / Square.

[Example 3] Production of multilayer thin film type transparent conductive film formed in the order of substrate / five oxide layers / metal layer / five oxide layers

3-1. Formation of first oxide layer thin film and sintering by flash

A flexible polyethylene terephthalate substrate (thickness: 100 μm) was washed with a substrate and an Ar gas was used to clean the surface of the substrate in the pretreatment chamber 10. Thereafter, in the ion implantation chamber 20, argon Ions (Ar + ) and nickel ions (Ni + ) were injected simultaneously. Silicon dioxide (SiO 2 ) was deposited in the sputtering chamber 30 at room temperature using an RF sputtering method. At this time, the thickness of the silicon dioxide (SiO 2 ) thin film was adjusted to be 10 nm. The RF power applied to the target was 30 W, the working vacuum was maintained at 1.5 mTorr, the distance between the target and the substrate was about 10 cm, the sputtering gas was 40 sccm (standard cc / min) Argon gas (Ar gas) was used. Then, a silicon dioxide (SiO 2 ) thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-2. Formation of the second oxide layer thin film and sintering

Subsequently, an indium tin oxide (ITO) thin film was deposited on the silicon dioxide (SiO 2 ) thin film, and the ITO thin film was adjusted to have a thickness of 12 nm. The RF power applied to the target was 30 W, the working vacuum was maintained at 1.5 mTorr, the distance between the target and the substrate was about 10 cm, the sputtering gas was 40 sccm (standard cc / min) An argon gas (Ar gas) was used. The ITO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-3. Formation of the third oxide layer thin film and sintering

On the ITO thin film layer formed by the above method, " 2-2. An aluminum-doped zinc oxide (AZO) thin film layer was formed by a method such as "formation of a second oxide layer thin film and sintering by flash", and the thickness was adjusted to be 14 nm. The AZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-4. Formation of the fourth oxide layer thin film and sintering

On the AZO thin film layer formed by the above-mentioned method, the above-mentioned " 3-2. (IGZO) thin film layer was formed in the same manner as in the formation of the second oxide layer thin film and scintillation sintering. The thickness of the indium gallium zinc (IGZO) thin film layer was adjusted to be 16 nm. The IGZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-5. Formation of the fifth oxide layer thin film and sintering by flash

On the IGZO thin film layer formed by the above method, the above-mentioned " 3-3. AZO thin film layer was formed by a method such as "formation of third oxide layer thin film and sintering by flash", and the thickness was adjusted to 18 nm. The AZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-6. Metal layer thin film formation and flash sintering

Under the conditions of a dc power of 30 W, a deposition pressure of 3 mTorr, and an argon (Ar) gas flow rate of 10 sccm on the AZO thin film formed by the above method using a silver (Ag) target in a puttering chamber 30, Silver (Ag) thin films were deposited. Then, the silver (Ag) thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-7. Formation of the sixth oxide layer thin film and sintering by flash

On the silver (Ag) thin film formed by the above-described method, "3-2. ITO thin film layer was formed by a method such as "formation of second oxide layer thin film and sintering by flash", and the thickness was adjusted to 20 nm. The ITO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-8. Formation of thin film of seventh oxide layer and sintering by flash

On the ITO thin film formed by the above method, the above-mentioned " 3-3. AZO thin film layer was formed by a method such as "formation of third oxide layer thin film and sintering by flash", and the thickness was adjusted to be 22 nm. The AZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-9. Formation of an eighth oxide layer thin film and sintering

On the AZO thin film formed by the above method, the above-mentioned " 3-4. IGZO thin film layer was formed by the same method as that of the formation of the fourth oxide layer thin film and scintillation sintering, but the thickness was adjusted to be 25 nm. The IGZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-10. Formation of 9th oxide layer thin film and sintering

On the IGZO thin film formed by the above method, the above-mentioned " 3-3. AZO thin film layer was formed by a method such as "formation of a third oxide layer thin film and sintering by flash", and the thickness was adjusted to 28 nm. The AZO thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-11. Formation of a tenth oxide layer thin film and sintering

On the AZO thin film formed by the above method, the above-mentioned " 3-1. (SiO 2 ) thin film layer was formed by a method such as "formation of a first oxide layer thin film and sintering by flash", and the thickness was adjusted to be 32 nm. Then, a silicon dioxide (SiO 2 ) thin film layer was subjected to flash light sintering in the same manner as in Example 1.

3-12. Light transmittance and surface resistance

The light transmittance of the multilayer thin film prepared in Example 3 was measured by the same method as in Example 1, and the light transmittance was 89%. The surface resistance was measured with a surface resistance meter (4 PROBE EDTM Rc 2175), which was 9 Ω / square. The ratio of the thickness of the seventh oxide layer to the thickness of 20 nm of the sixth oxide layer is the lowest of 1: 1.1, and the ratio of the thickness of the tenth oxide layer to 10 nm of the first oxide layer is 10: And the thickness ratios (ratios) of the other oxide layers were all 1.1 to 3.2. Thus, the ratio of the thickness of the oxide layer is in the range of 1.1 to 3.2, and shows a high light transmittance of 89% and a low surface resistance of 9? / Square.

[Comparative Example 1] Preparation of multilayer thin film type transparent conductive film formed in the order of substrate / two oxide layers / metal layer / one oxide layer

(1) Formation of thin film of first oxide layer

A flexible polyimide substrate (thickness: 150 μm) excellent in thermal characteristics was cleaned as a substrate, and the surface of the substrate was cleaned using argon gas (Ar gas) in the pretreatment chamber 10. Then, in the ion implantation chamber 20, Ions (Ni + ) were implanted. In the sputtering chamber 30, titanium dioxide (TiO 2 ) was deposited at room temperature using a DC sputtering method. At this time, the thickness of the titanium dioxide (TiO 2 ) thin film was adjusted to be 30 nm. The DC power applied to the target was 30 W, the working vacuum was maintained at 1.5 mTorr, the distance between the target and the substrate was about 10 cm, the sputtering gas was 40 sccm (standard cc / min) Argon gas (Ar gas) was used, and sintering was not performed.

(2) Formation of thin film of second oxide layer

Example 2-2 " AZO (Aluminum-doped Zinc Oxide) thin film was formed by a method such as "formation of second oxide layer thin film and sintering by flash", the thickness of the thin film was adjusted to 30 nm, and scintillation sintering was not performed.

(3) Formation of metal layer thin film

&Quot; 2-4. Silver (Ag) thin film was formed by the same method as " formation of a metal layer thin film and sintering by flash ". At this time, the thickness of the silver (Ag) thin film was 9 nm, and the light sintering was not performed.

(4) Formation of thin film of the third oxide layer

Example 2-2 " AZO thin film was formed by the same method as that of the formation of the second oxide layer thin film and scintillation sintering, and the thickness of the thin film was adjusted to 115 nm, and the light sintering was not performed.

(5) Light transmittance and surface resistance

The light transmittance of the multilayer thin film produced in Comparative Example 1 was measured by the same method as in Example 1, and the light transmittance was 85%. The surface resistance was measured with a surface resistance meter (4 PROBE EDTM Rc 2175), which was 14 Ω / square. The ratio of the thickness of the second oxide layer to the thickness of 30 nm of the first oxide layer is 30 nm and the ratio of the thickness of the third oxide layer to the thickness of 30 nm of the second oxide layer is 115 nm is 1: : 3.8, and the ratio of the thickness of the first oxide layer to the thickness of 30 nm of the third oxide layer to the thickness of 115 nm is also 1: 3.8, which shows a low light transmittance of 85% and a high surface resistance of 14? / Square.

Examples 1 to 3 of the present invention in which at least one oxide layer or a metal layer was scarcely sintered with a thickness ratio of one oxide layer to another oxide layer of 1: 1.1 to 1: 3.5 were all high Light transmittance and low surface resistance of less than 10 Ω / square. However, in the case of Comparative Example 1 in which the thickness ratio of the other oxide layer to any one oxide layer thickness was less than or greater than 1: 1.1 to 1: 3.5 and the sintering was not performed, It has low light transmittance of 85% and high surface resistance of 14 Ω / square.

The transparent conductive film coated with the multilayer thin film described above and the manufacturing method thereof are not limited to the configuration and the method of the embodiments described above, but all or some of the embodiments may be selectively And may be configured in combination.

10: Pretreatment chamber 20: Ion implantation chamber
30: Sputtering chamber 40: Rewinder
50: source 21: roller
23: grid 25: heater
27: sputtering gun 31: roller
37a: first sputtering gun 37b: second sputtering gun
37c: third sputtering gun 100: substrate
201: first oxide layer 202: second oxide layer
203: third oxide layer 204: fourth oxide layer
205: fifth oxide layer 206: sixth oxide layer
207: seventh oxide layer 208: eighth oxide layer
209: ninth oxide layer 210: tenth oxide layer
300: metal layer

Claims (3)

1. A transparent conductive film obtained by laminating 1 to 5 oxide layers on a transparent substrate, laminating one metal layer on the oxide layer, and laminating 1 to 5 oxide layers on the metal layer,
Ions are implanted into the substrate,
Wherein the ratio of the thickness of one of the oxide layers to the thickness of the other oxide layer is from 1: 1.1 to 1: 3.5,
Wherein at least one layer of the oxide layer or the metal layer is irradiated with a white flash using a xenon lamp, and a short pulse in microseconds to milliseconds And a high temperature is generated and sintered at the moment.
Transparent Conductive Film with Multi - layer Thin Film Structure.
The method according to claim 1,
The transparent conductive film of the multi-
Cleaning the substrate by gas sputtering with a pretreatment of the substrate;
Implanting ions into the substrate by at least one ion implantation method selected from gas ion implantation, metal ion implantation, mixed ion implantation of a gas ion and a metal ion to form a mixed layer on a surface layer of the substrate;
(PVD) sputtering coating, a plasma enhanced chemical vapor deposition (PECVD) coating, and a chemical vapor deposition (CVD) coating on the substrate in a plasma vacuum atmosphere. Laminating one to five oxide layers by either method;
Depositing a metal layer on the oxide layer by a method selected from the group consisting of a sputtering coating in a plasma vacuum atmosphere, a combination of an ion implantation coating and a sputtering coating;
(PVD) sputtering coating, a plasma enhanced chemical vapor deposition (PECVD) coating, and a chemical vapor deposition (CVD) coating on the metal layer in a plasma vacuum atmosphere. Laminating the oxide layers 1 to 5 in any one of the methods;
Wherein at least one layer of the oxide layer or the metal layer is irradiated with a white flash using a xenon lamp, and a short pulse in microseconds to milliseconds And a step of sintering at a high temperature by generating a high temperature.
Transparent Conductive Film with Multi - layer Thin Film Structure.
3. The method according to any one of claims 1 to 2,
The substrate may be any one selected from the group consisting of a glass substrate, a quartz substrate, a silicon substrate, a metal substrate, and a flexible polymer substrate. The flexible polymer substrate may be selected from the group consisting of polyethylene, polyether imide, and is made of one or more materials selected from polystyrene, polystyrene, polypropylene, polyethersulfone, polyethyleneterephthalate, polycarbonate, polyimide, and polyethylene naphthalate ,
The gas for the gas ion implantation may include at least one of argon (Ar), ammonia (NH 3 ), nitrogen (N 2 ), hydrogen (H 2 ), helium (He), oxygen (O 2 ), acetylene gas (C 2 H 2 ) , Methane (CH 4 ), silane (SiH 4 ), hexamethyldisiloxane (HMDSO)
The metal for the metal ion implantation may be at least one selected from the group consisting of Ag, Cu, Pd, Mg, Au, Pt, Fe, (Mn), zinc (Zn), tin (Sn), zirconium (Zr), tungsten (W), cobalt (Co), titanium (Ti), niobium (Nb), molybdenum At least one selected from tantalum (Ta), vanadium (V), chromium (Cr), iridium (Ir), bismuth (Bi)
The oxide layer may be formed of indium gallium zinc oxide (IGZO), aluminum doped zinc oxide (AZO), indium zinc oxide (IZO), indium tin oxide (ITO) ), zinc (ZnO), aluminum oxide (Al 2 O 3), tin oxide (SnO 2), silicon dioxide (SiO 2), titanium dioxide (TiO 2), niobium oxide (Nb 2 O 5), tungsten oxide ( WO), vanadium pentoxide (VO 5 ), nickel oxide (NiO)
The metal layer may be at least one selected from the group consisting of Ag, Cu, Pd, Mg, Au, Pt, Fe, Al, Ni, Mn, Zn, Sn, Zr, T, C, Ti, Nb, Mo, Sb, And at least one selected from the group consisting of Ta, vanadium (V), chromium (Cr), iridium (Ir), bismuth (Bi)
Transparent Conductive Film with Multi - layer Thin Film Structure.
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