KR101273798B1 - Multilayer transparent electrode and method for manufacturing the same - Google Patents

Multilayer transparent electrode and method for manufacturing the same Download PDF

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KR101273798B1
KR101273798B1 KR20100140155A KR20100140155A KR101273798B1 KR 101273798 B1 KR101273798 B1 KR 101273798B1 KR 20100140155 A KR20100140155 A KR 20100140155A KR 20100140155 A KR20100140155 A KR 20100140155A KR 101273798 B1 KR101273798 B1 KR 101273798B1
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titanium oxide
layer
copper
oxide layer
target
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KR20120078001A (en
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김한기
박준혁
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경희대학교 산학협력단
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Abstract

The present invention provides a multilayer transparent electrode based on a simple and inexpensive titanium oxide material and a method of manufacturing the same. The multilayer transparent electrode according to the present invention includes a titanium oxide layer made of titanium oxide (Ti-O) doped with a metal material, a copper layer in contact with the titanium oxide layer, and a titanium oxide layer laminated on the upper and lower surfaces of the copper layer. It has a sandwich structure of +1 layer (n is an integer of 1 or more). Since the multilayer transparent electrode according to the present invention exhibits high transmittance and conductivity based on inexpensive titanium and copper, low cost optoelectronic devices can be realized and competitiveness can be given to various optoelectronic device industries.

Description

Multilayer transparent electrode and method for manufacturing the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to transparent electrodes used in various optoelectronic devices, and more particularly, to a multilayer transparent electrode based on inexpensive titanium oxide material and a method of manufacturing the same.

Along with the high-tech information technology industry, the renewable energy industry is rapidly rising, and interest in transparent electrode materials having both electrical conductivity and light transmission is increasing. Flat panel display products and thin-film solar cells must transmit light through a thin transparent substrate and at the same time have excellent electrical conductivity.

As a transparent electrode material, a transparent conductive oxide (TCO) manufactured in the form of a thin film is typical. Transparent conductive oxide is a generic term for oxide-based degenerate semiconductor electrodes having both high optical transmittance (more than 85%) and low resistivity (1 × 10 -3 Ω · cm) in the visible region. As a result, it is used as a core electrode material for functional thin films such as antistatic films and electromagnetic shielding, flat panel displays, solar cells, touch panels, transparent transistors, flexible photoelectric devices, and transparent photoelectric devices.

Currently, indium tin oxide (hereinafter referred to as "ITO") doped with 10 wt% tin oxide indium oxide as a transparent oxide electrode is representative. The ITO electrode can transmit 90% or more of the light in the visible region, exhibits very transparent properties, and has a low specific resistance (10 -3 to 10 -4 Ω · cm), and thus is widely used in various photoelectric devices.

The core of the flat panel display, solar cell, touch panel, transparent transistor, flexible optoelectronics, and transparent optoelectronics businesses is to secure cost competitiveness by reducing production costs. However, indium, which is used as a core material of ITO, is rapidly increasing its price due to the limitation of reserves and the rapid growth of the photovoltaic device business. In addition, ITO has disadvantages such as vulnerability to hydrogen plasma, lack of flexibility, and difficulty in application to flexible substrates due to high temperature processes. For this reason, researches have been actively conducted to find a material for replacing an ITO transparent electrode.

SUMMARY OF THE INVENTION The present invention has been devised in view of this point, and an object of the present invention is to provide a multilayer transparent electrode based on a simple and inexpensive titanium oxide material and a manufacturing method thereof.

Multi-layered transparent electrode according to the present invention for achieving the above object, a titanium oxide layer made of titanium oxide (Ti-O) doped with a metal material, a copper layer in contact with the titanium oxide layer, the upper and lower surfaces of the copper layer It has a sandwich structure of 2n + 1 layer (n is an integer of 1 or more) in which the said titanium oxide layer was laminated | stacked.

The titanium oxide layer may be represented by the chemical formula of MxTiyOz (x, y, z = 0.01 to 10, M is any one of niobium (Nb), vanadium (V), tantalum (Ta)).

The copper layer may have a thickness of 8 to 14 nm.

The titanium oxide layer may have a thickness of 30 to 50 nm.

Method for manufacturing a multilayer transparent electrode according to the present invention for achieving the above object, the step of forming a titanium oxide layer made of titanium oxide doped with a metal material on a substrate, a copper layer on the titanium oxide layer of 8 ~ 14nm thickness And forming a titanium oxide layer made of titanium oxide doped with a metal material on the copper layer, wherein the upper and lower surfaces of the copper layer are covered with the titanium oxide layer. The titanium oxide layer and the copper layer are laminated so as to have a sandwich structure of the above integer).

The method for manufacturing a multilayer transparent electrode according to the present invention includes a substrate, a first sputter gun having a titanium oxide target doped with a metal material for forming the titanium oxide layer, and a copper target for forming the copper layer. Putting the prepared second sputter gun into the same vacuum chamber, and sequentially rotating the titanium oxide layer and the copper layer on the substrate using a continuous sputtering process of alternately operating the first and second sputter guns. Can be laminated.

In the method of manufacturing a multilayer transparent electrode according to the present invention, a film-type flexible substrate is used as the substrate, and a titanium oxide target doped with a metal material for forming the titanium oxide layer in the movement path of the flexible substrate is provided. A first sputter gun and a second sputter gun having a copper target for forming the copper layer are sequentially disposed to face the flexible substrate, and the first sputter gun and the second sputter gun are moved while moving the flexible substrate. The titanium oxide layer and the copper layer may be sequentially stacked on the flexible substrate by using a continuous roll-to-roll sputter process.

In the method of manufacturing a multilayer transparent electrode according to the present invention, the substrate, a titanium oxide target doped with a metal material for forming the titanium oxide layer, a copper target for forming the copper layer is placed in the same vacuum chamber, the oxidation The titanium target and the copper target are sequentially heated to evaporate the titanium oxide target and the copper target to sequentially deposit the vapor of the titanium oxide target and the vapor of the copper target on the substrate, using the continuous evaporation process. The titanium oxide layer and the copper layer may be sequentially stacked on a substrate.

In the method of manufacturing a multilayer transparent electrode according to the present invention, the substrate is placed in a vacuum chamber containing a titanium oxide target doped with a metal material for forming the titanium oxide layer to form a titanium oxide layer on the substrate, the titanium oxide The layered substrate is placed in another vacuum chamber containing a copper target for forming the copper layer, and a copper layer is formed on the titanium oxide layer, and the titanium oxide target in which the titanium oxide layer and the copper layer are sequentially stacked The titanium oxide layer and the copper layer may be sequentially stacked on the substrate using a batch type process in which a titanium oxide layer is deposited on the copper layer in a vacuum chamber.

The titanium oxide target may be doped with 6 wt% of niobium oxide (Nb 2 O 5 ) in titanium dioxide (TiO 2 ).

Multi-layered transparent electrode according to the present invention has excellent electrical and optical properties, flat panel display (LCD, AMOLED, E-ink, PDP, FED), solar cell (DSSC, OSC, CIGS), transparent TFT, touch panel, light emitting diode It can be used in various optoelectronic devices such as sensors. In addition, it is easy to bend due to the excellent ductility of the thin copper layer can be used in the transparent electrode of the optoelectronic device based on the flexible polymer substrate.

In addition, since the multilayer transparent electrode according to the present invention exhibits high transmittance and conductivity based on inexpensive titanium and copper, low cost optoelectronic devices can be realized and competitiveness can be given to various optoelectronic device industries.

1 illustrates that a multilayer transparent electrode according to an embodiment of the present invention is stacked on a substrate.
2 shows sheet resistance and specific resistance according to the thickness of a copper layer interposed between a titanium oxide layer made of titanium oxide doped with niobium.
Figure 3 shows the transmittance according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide doped with niobium.
Figure 4 shows the sheet resistance and resistivity according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide doped with tantalum.
5 shows the transmittance according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide doped with tantalum.
6 shows sheet resistance and specific resistance of a multilayer transparent electrode according to a thickness of a titanium oxide layer made of titanium oxide doped with niobium.
7 shows the transmittance of the multilayer transparent electrode according to the thickness of the titanium oxide layer made of titanium oxide doped with niobium.
8 shows an inclined dual target RF magnetron sputtering apparatus for a continuous sputter process.
9 shows a roll to roll sputtering apparatus for a continuous roll to roll sputtering process.
10 shows an evaporator for a continuous deposition process.
11 shows an apparatus for a batch type process.

Hereinafter, with reference to the accompanying drawings, it will be described in detail a multilayer transparent electrode and a method of manufacturing the same according to an embodiment of the present invention.

In describing the present invention, the sizes and shapes of the components shown in the drawings may be exaggerated or simplified for clarity and convenience of explanation. In addition, terms defined in consideration of the configuration and operation of the present invention may be changed according to the intention or custom of the user, the operator. These terms are to be construed in accordance with the meaning and concept consistent with the technical idea of the present invention based on the contents throughout the present specification.

1 illustrates that a multilayer transparent electrode according to an embodiment of the present invention is stacked on a substrate.

As shown in FIG. 1, the multilayer transparent electrode 10 according to an exemplary embodiment of the present invention includes a first titanium oxide layer 11 formed on a substrate and a copper layer 12 formed on the first titanium oxide layer 11. And a second titanium oxide layer 13 formed on the copper layer 12. The first titanium oxide layer 11 and the second titanium oxide layer 13 are made of titanium oxide (Ti-O) doped with a metal material, and have an anatase crystal structure.

Since the first titanium oxide layer 11 and the second titanium oxide layer 13 are based on a low-cost titanium oxide material, the multilayer transparent electrode 10 may significantly reduce manufacturing cost compared to a transparent electrode using ITO. have. Titanium (Ti), which constitutes titanium oxide, is rich in reserve and inexpensive, has a large refractive index (n = 2.3 to 2.5), physically and chemically stable characteristics, and exhibits excellent permeability in the visible and near infrared ranges. Suitable for implementing

The first titanium oxide layer 11 and the second titanium oxide layer 13 may be represented by the chemical formula of MxTiyOz. Here, M is any one selected from niobium (Nb), vanadium (V), and tantalum (Ta) which are Group 5 transition metals. Titanium oxide doped with Group 5 transition metal is a transparent electrode that uses conduction through d-electron orbit, unlike ITO, which uses conventional s-electron orbit, and has a bandgap (3.6 to 3.8 eV) similar to that of ITO. ) And high transmittance of 90% or more, sufficient to replace ITO. In particular, the anatase structure exhibits the same conductivity as the metal. In the case of doped dopant titanium oxide, the amount of dopant that can be dissolved in the crystal is determined by the crystal structure, and the values of x, y, and z are present in the range of 0.01 to 10 in MxTiyOz having an anatase structure.

Titanium oxide doped with a Group 5 transition metal is less than the sheet resistance and specific resistance that can be applied to a flat panel display, etc., but the present invention provides a copper layer between the first titanium oxide layer 11 and the second titanium oxide layer 13. This can be overcome by interposing (12). If the thickness of the copper layer 12 is thick in the multilayer transparent electrode 10 of the sandwich structure, the conductivity is improved, but most of the incident light is absorbed by the copper layer 12 so that the light transmittance is low, and the copper layer 12 If the thickness is thin, the high resistance of the titanium oxide layers 11 and 13 becomes dominant, and thus it is not applicable to the transparent electrode having high conductivity. For this reason, the thickness of the copper layer 12 is inevitably limited.

2 and 3 illustrate sheet resistance according to the thickness of a copper layer 12 interposed between titanium oxide layers 11 and 13 made of niobium-doped titanium oxide (Nb: TiO 2 , hereinafter referred to as 'NTO'). (sheet resistance), resistivity and transmittance are shown. These results were obtained by forming a multilayer transparent electrode at room temperature using an inclined dual target RF magnetron sputtering device as shown in FIG. 8, but varying the thickness of the copper layer to 8 nm, 10 nm, 12 nm, 14 nm, and 16 nm. The formation process of the multilayer transparent electrode is as follows.

First, a lower NTO layer was formed on a glass substrate 20 having a size of 25 × 25 mm by using a sputtering process. A black NTO target (6wt% Nb 2 O 5 doped TiO 2 ) was used as the titanium oxide target 30 to provide a film formation material, and the process pressure was maintained at 3 mTorr at room temperature and 10 sccm of argon (Ar) gas was supplied. While sputtering process was performed by applying 100W of RF power.

Through this sputtering process, a lower NTO layer (first titanium oxide layer) having a thickness of 30 nm was formed on the glass substrate. Next, a copper layer was formed on the lower NTO layer through a sputtering process. At this time, the copper target 31 was used, and DC power of 25 W was applied. The remaining sputtering conditions are the same as the deposition process of the lower NTO layer. Finally, an upper NTO layer (second titanium oxide layer) was formed on the copper layer in the same manner as the lower NTO layer film formation process.

2, it can be seen that as the thickness of the copper layer increases, the electrical resistance is improved while the sheet resistance and the specific resistance decrease. And it can be seen from Figure 3 that the transmittance is high in the visible light region of 400 ~ 600nm, it can be seen that the transmittance decreases as the thickness of the copper layer increases.

4 and 5 show the sheet resistance, resistivity and transmittance according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide (Ta: TiO 2 ) doped with tantalum. These results were obtained by forming a multilayer transparent electrode using a slanted dual target RF magnetron sputtering device as shown in FIG. 8, but varying the thickness of the copper layer to 6 nm, 8 nm, 10 nm, 12 nm, and 14 nm. In forming the multilayer transparent electrode, the remaining sputtering conditions except for using a titanium oxide target doped with titanium oxide (6wt% Ta 2 O 5 doped TiO 2 ) are the same as described above, Omit.

Referring to FIG. 4, it can be seen that, as with the result of using niobium, as the thickness of the copper layer increases, the electrical properties are improved while the sheet resistance and the specific resistance decrease. 5, the transmittance decreases as the thickness of the copper layer increases, but it can be seen that most of them appear in the visible light region of 400 to 600 nm.

Niobium and tantalum used in the formation of the titanium oxide layer in the test example are Group 5 transition metals with similar chemical properties. Group 5 transition metals include vanadium in addition to niobium and tantalum. There is a chemically similar property between elements belonging to the same family, and this similarity occurs because elements belonging to the same group have the same number of electrons in the outermost electron shell. Therefore, even when using a titanium oxide layer doped with vanadium, it can be seen that there is a possibility as a transparent electrode having electrical and optical characteristics.

When combining these test data, it is preferable that the multilayer transparent electrode 10 according to the present invention has a thickness of 8 to 14 nm in order to exhibit excellent electrical and optical characteristics as a transparent electrode.

6 and 7 illustrate sheet resistance, specific resistance, and transmittance of the multilayer transparent electrode according to the thickness of the NTO layer (the first titanium oxide layer and the second titanium oxide layer) of the multilayer transparent electrode having the NTO / Cu / NTO structure. will be. This result is to form a multilayer transparent electrode using a sloped dual target RF magnetron sputtering device as shown in Figure 8, the thickness of the copper (Cu) layer to 12nm and the thickness of the NTO layer 30, 50, It is obtained by differently at 70, 90, and 110 nm.

6, it can be seen that as the thickness of the NTO layer increases, sheet resistance and specific resistance increase. This is because the resistance of the NTO layer is high, the overall resistance of the multilayer transparent electrode increases as the thickness increases. In the transmittance shown in FIG. 7, as the thickness of the NTO layer increases, the transmittance decreases again after increasing in the wavelength range of 550 nm or less, and the trend tends to increase constantly in the wavelength range of 550 nm or more.

To sum up these results, it is not appropriate that the thickness of the NTO layer is larger than 50 nm because the transparent electrode for application to the optoelectronic device is mostly required to have a low resistance. Since the thickness of the NTO layer shows the highest transmittance at about 30 to 50 nm, the thickness of the NTO layer (the first titanium oxide layer and the second titanium oxide layer) in the multilayer transparent electrode according to the present invention is 30 to 50 nm. It is good to have.

In the above, the multilayer transparent electrode according to the present invention has been described as having a three-layer structure of a first titanium oxide layer / copper layer / second titanium oxide layer, as shown in FIG. The structure is not limited to this three-layer structure. That is, the multi-layered transparent electrode according to the present invention includes at least one pair of titanium oxide layers and at least one copper layer, and a variety of 2n + 1 layers (n is an integer of 1 or more) each having a titanium oxide layer stacked on top and bottom of the copper layer. It may have a multi-stack structure.

As described above, the multilayer transparent electrode 10 according to the present invention is excellent in electrical and optical characteristics, such as a flat panel display (LCD, AMOLED, E-ink, PDP, FED), solar cells (DSSC, OSC, CIGS), It can be used in various optoelectronic devices such as a transparent TFT, a touch panel, a light emitting diode, and a sensor. In addition, it can be easily bent due to the excellent ductility of the thin copper layer 12 can be applied to the transparent electrode of the optoelectronic device based on the flexible polymer substrate.

Meanwhile, the multilayer transparent electrode according to the present invention is manufactured through the following continuous sputtering process, continuous roll-to-roll sputtering process, continuous evaporation process, and batch type process. Can be. Of course, the multilayer transparent electrode according to the present invention may be manufactured through various film forming processes in addition to the following manufacturing process.

First, a continuous sputtering process will be described with reference to the inclined dual target RF magnetron sputtering apparatus shown in FIG. 8.

The vacuum chamber 34 in which the substrate 20, the first sputter gun 32 provided with the titanium oxide target 30 doped with a metal material, and the second sputter gun 33 provided with the copper target 31 are accommodated The first sputter gun 32 and the second sputter gun 33 are operated alternately while bringing to process pressure and injecting process gas into the vacuum chamber 34. First, RF power is applied to the first sputter gun 32 to induce plasma to the titanium oxide target 30 to deposit the first titanium oxide layer 11 on the substrate 20, and then to the second sputter gun 33. ) By applying a DC power to induce a plasma to the copper target 31 to deposit a copper layer 12 on the first titanium oxide layer (11). Thereafter, the second titanium oxide layer 13 is stacked on the copper layer 12 in the same process as the first sputter gun 32 is operated to form the first titanium oxide layer 11.

Using this continuous sputtering process, the titanium oxide target 30 and the copper target 31 are placed in the same vacuum chamber 34 and the titanium oxide layers 11 and 13 are placed on the substrate 20 while maintaining the process pressure. Since the copper layer 12 can be laminated continuously, film-forming efficiency can be improved.

Hereinafter, a continuous roll-to-roll sputtering process will be described with reference to the roll-to-roll sputtering apparatus shown in FIG. 9.

In order to use such a continuous roll-to-roll sputtering process, a film-shaped flexible substrate 20 is used as the substrate. The roll-to-roll sputtering process uses a plurality of sputter guns 35, 36 and 37 having targets 30 and 31 for the continuous film formation of the multilayer transparent electrode similar to the continuous sputtering process described above.

First, the vacuum chamber 38 is brought to a process pressure and the process gas is injected into the vacuum chamber 38 while the rewinder 39 and the winder 40 are used to move the flexible substrate 20 along the circumference of the cooling drum 41. Move it. When the flexible substrate 20 moves, the ion gun 42 is operated to perform a surface pretreatment process of the flexible substrate 20, and the first sputter gun 35 having the titanium oxide target 30 doped with a metal material is provided. The first titanium oxide layer 11 is formed on the surface of the flexible substrate 20 which has been surface-treated. After the formation of the first titanium oxide layer 11, the second sputter gun 36 with the copper target 31 is operated to form the copper layer 12 on the first titanium oxide layer 11, and the titanium oxide The third sputter gun 37 with the target 30 is operated to form the second titanium oxide layer 13 on the copper layer 12.

This continuous roll-to-roll process is characterized in that the titanium oxide layer (11) (13) and the copper layer (13) on the flexible substrate 20 moving while simultaneously operating the plurality of sputter guns 35, 36, 37 in comparison with the continuous sputter process. 12) can be formed continuously, and the film formation speed can be increased.

Hereinafter, a continuous deposition process will be described with reference to the evaporator illustrated in FIG. 10.

In the case of using the continuous deposition process, the vacuum chamber 43 containing the substrate 20, the titanium oxide target 30 and the copper target 31 is vacuumed, and the titanium oxide target 30 and the copper target 31 are sequentially As the resistance heating method. First, titanium oxide vapor is generated by applying electric power to the titanium oxide target 30 to heat the titanium oxide target 30. At this time, the titanium oxide vapor rises and is deposited on the substrate 20 to form the first titanium oxide layer 11. Thereafter, electric power is applied to the copper target 31 to heat the copper target 31 to generate copper vapor. At this time, copper vapor rises to form the copper layer 12 on the first titanium oxide layer 11. Next, the titanium oxide target 30 is heated again to form a second titanium oxide layer 13 on the copper layer 12.

Hereinafter, a batch type process will be described with reference to an apparatus for the batch type process illustrated in FIG. 11.

The batch type process is a method of forming a thin film by performing a deposition process step by step in each chamber 44. For example, after placing the substrate 20 loaded into the central chamber 45 into one chamber 44 using the robot arm 46, the first titanium oxide layer on the substrate 20 through a sputtering process or a deposition process. (11) is formed. Subsequently, the copper substrate 12 is formed on the first titanium oxide layer 11 by moving the substrate 20 on which the first titanium oxide layer 11 is formed to another chamber 44. Next, the substrate 20 on which the first titanium oxide layer 11 and the copper layer 12 are formed is placed in another chamber 44 to form a second titanium oxide layer 13 on the copper layer 12.

This batch type process can be used independently of the chamber for each target to prevent contamination by other targets, and can be used by connecting a variety of chambers to the central chamber, so that not only sputter process but also various deposition process such as deposition process You can proceed at once.

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art can improve and modify the technical idea of the present invention in various forms. Accordingly, these modifications and variations are intended to fall within the scope of the present invention as long as it is obvious to those skilled in the art.

10: multilayer transparent electrode 11, 13: first and second titanium oxide layer
12 copper layer 20 substrate
30 titanium oxide target 31 copper target
32, 33, 35, 36, 37: sputter gun 42: ion gun

Claims (13)

A titanium oxide layer made of titanium oxide (Ti-O) doped with a metal material; And
And a copper layer in contact with the titanium oxide layer.
It has a sandwich structure of 2n + 1 layer (n is an integer of 1 or more) in which the titanium oxide layer is laminated on the upper and lower surfaces of the copper layer,
The titanium oxide layer is MxTiyOz (x, y, z = 0.01 ~ 10, M is a multi-layer transparent electrode, characterized in that represented by the formula of niobium (Nb), vanadium (V), tantalum (Ta)) . delete The method of claim 1,
The thickness of the copper layer is a multilayer transparent electrode, characterized in that 8 ~ 14nm. The method of claim 3, wherein
The thickness of the titanium oxide layer is a multilayer transparent electrode, characterized in that 30 ~ 50nm. Forming a titanium oxide layer made of titanium oxide doped with a metal material on the substrate;
Forming a copper layer on the titanium oxide layer to a thickness of 8 to 14 nm; And
Forming a titanium oxide layer made of titanium oxide doped with a metal material on the copper layer;
The titanium oxide layer and the copper layer are laminated so that the upper and lower surfaces of the copper layer are covered with the titanium oxide layer to form a sandwich structure of 2n + 1 layers (n is an integer of 1 or more) as a whole.
The titanium oxide layer is MxTiyOz (x, y, z = 0.01 ~ 10, M is a multi-layer transparent electrode, characterized in that represented by the chemical formula of niobium (Nb), vanadium (V), tantalum (Ta)) Manufacturing method. delete delete The method of claim 5, wherein
The titanium oxide layer is formed in a thickness of 30 ~ 50nm manufacturing method of a multilayer transparent electrode. The method of claim 5, wherein
Into the substrate, a first sputter gun having a titanium oxide target doped with a metal material for forming the titanium oxide layer, a second sputter gun having a copper target for forming the copper layer is placed in the same vacuum chamber, The titanium oxide layer and the copper layer are sequentially stacked on the substrate using a continuous sputtering process of alternately operating the first sputter gun and the second sputter gun. . The method of claim 5, wherein
A first sputter gun and a copper layer for forming a copper layer using a film-type flexible substrate as the substrate, and a titanium oxide target doped with a metal material for forming the titanium oxide layer in a movement path of the flexible substrate. A continuous roll-to-roll for arranging a second sputter gun with a copper target in order to face the flexible substrate and actuating the first sputter gun and the second sputter gun while moving the flexible substrate; and sequentially stacking the titanium oxide layer and the copper layer on the flexible substrate using a sputter process. The method of claim 5, wherein
The substrate, the titanium oxide target doped with a metal material for forming the titanium oxide layer, and the copper target for forming the copper layer are placed in the same vacuum chamber, and the titanium oxide target and the copper target are sequentially heated to oxidize the oxide. The titanium oxide layer and the copper layer are sequentially on the substrate using a continuous evaporation process in which a vapor of the titanium oxide target and vapor of the copper target are sequentially deposited on the substrate by evaporating the titanium target and the copper target. Method for producing a multilayer transparent electrode, characterized in that the lamination. The method of claim 5, wherein
The substrate is placed in a vacuum chamber containing a titanium oxide target doped with a metal material for forming the titanium oxide layer, and a titanium oxide layer is formed on the substrate. The substrate on which the titanium oxide layer is laminated is deposited on the copper layer. Into another vacuum chamber containing a copper target for depositing a copper layer on the titanium oxide layer, the titanium oxide layer and a copper layer in a vacuum chamber containing the titanium oxide target stacked in this order, the titanium oxide layer on the copper layer And sequentially depositing the titanium oxide layer and the copper layer on the substrate using a batch type process of forming a film. 13. The method according to any one of claims 9 to 12,
The titanium oxide target is a method of manufacturing a multilayer transparent electrode, characterized in that the titanium dioxide (TiO 2 ) doped with niobium oxide (Nb 2 O 5 ) 6wt%.
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KR101641950B1 (en) * 2014-09-05 2016-07-25 주식회사 디케이티 Metal mesh of touch panel and method for manufcture of thereof
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