KR20150087222A - Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same - Google Patents
Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same Download PDFInfo
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- KR20150087222A KR20150087222A KR1020157012438A KR20157012438A KR20150087222A KR 20150087222 A KR20150087222 A KR 20150087222A KR 1020157012438 A KR1020157012438 A KR 1020157012438A KR 20157012438 A KR20157012438 A KR 20157012438A KR 20150087222 A KR20150087222 A KR 20150087222A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
- C09J7/243—Ethylene or propylene polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Inorganic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip having a bump electrode used in a flip chip mounting process, A method for manufacturing a semiconductor chip with high precision and without any work, and a surface protective tape for thin film grinding used in the method.
There is provided a method of manufacturing a semiconductor chip in which a bump portion having a bump as an electrode is formed on a semiconductor wafer on which a semiconductor circuit is formed and a back surface of the semiconductor wafer is ground, A surface protective tape for thin-film grinding in which an adhesive film is laminated on a pressure-sensitive adhesive layer of an adhesive tape having a pressure-sensitive adhesive layer on a base film after the formation of the modified layer and before grinding the back surface of the semiconductor wafer, A step of sticking (sticking) the semiconductor wafer to the side where the semiconductor circuit is formed on the adhesive film side, a step of picking up the semiconductor wafer after the back grinding of the semiconductor wafer, And a surface protective tape for thin-film grinding used in the method.
Description
The present invention relates to a method of manufacturing a semiconductor chip and a surface protective tape for thin-film grinding used in the method.
In recent years, the spread of IC cards and the abrupt capacity increase of the USB memory have progressed, and along with the increase in the number of chips to be superimposed, thinning is further demanded. Therefore, conventionally, there is a need to reduce the thickness of the semiconductor chip having a thickness of about 200 mu m to about 350 mu m to a thickness of 50 to 100 mu m or less. As a method of achieving thinning of such a chip, there is a method of performing a thinning grinding in a usual process using a special tape, a method of forming a groove with a predetermined depth from the front side of the wafer called pre-dicing, A method of manufacturing a semiconductor chip is known. In this method, the back-grinding of the wafer and the division into the respective chips are performed at the same time, whereby the thin chip can be efficiently manufactured. Further, by reducing the grinding stress on the chip, there is an effect of improving the anti-bending strength of the chip, and in particular, application to a device for grinding with a thin film of 100 m or less has been studied.
In addition to the thinning of semiconductor wafers, the trend toward larger diameters is particularly noticeable in the fields of flash memories in which NAND type or NOR type are present, and DRAMs which are volatile memories. Currently, it is becoming standard to grind 12-inch wafers to less than 100 μm thickness.
Since the performance of a memory device is improved by superimposing chips, thin film grinding is indispensable. For this reason, a pressure-sensitive adhesive sheet (see Patent Document 3) dedicated to the production process (see Patent Document 1 and Patent Document 2) and a pressure-sensitive adhesive sheet (see Patent Document 3) It is possible to use a special adhesive sheet for grinding (see Patent Document 4), a dicing die-bonding sheet (see Patent Document 5) and a tape having a point-adhesive layer made of a specific resin (see Patent Document 6) A memory or the like can be manufactured.
On the other hand, in recent years, with respect to wafers used for flip chip mounting using an electrode portion wafer in consideration of large impact and the like, with the spread of smart phones, the performance improvement of mobile phones, the miniaturization of music players, The demand for thinning is increasing. In addition, it is necessary to perform thin film grinding with a bump portion of not more than 100 mu m on the wafer. The bumps for flip-chip connection are made denser in order to improve the transfer speed and the height of the bumps is lowered, and accordingly, the distance between the bumps is shortened. In recent years, since flip-chip connection is also applied to a DRAM, thinning of wafers is accelerating.
Flip chip mounting has attracted attention as a method capable of mounting a semiconductor device with a minimum area for the recent miniaturization and high density of electronic devices. A bump is formed on the electrode of the semiconductor element used for the flip chip mounting, and the bump and the wiring on the circuit board are electrically connected. As the composition of these bumps, mainly solder or gold is used. This solder bump or gold bump is formed on an exposed aluminum terminal or the like which is connected to the internal wiring of the chip by vapor deposition or plating.
Since the wafer has large irregularities on the surface thereof, it is difficult to form a thin film, and when the back side grinding is performed using a normal tape, cracking of the wafer occurs or the thickness precision of the wafer is deteriorated. For this reason, the grinding of the wafer by the bump portion is performed by using a specially designed surface protection tape (see Patent Document 7).
However, since these tapes sufficiently absorb the bumps to secure the grinding property, it is very difficult to achieve both of the peeling performance. The finished thickness of flip chip mounted chips up to now has a thickness of 200 탆 or more, which is a certain thickness, and it can be peeled anyway because the rigidity can be maintained. However, in recent years, the thickness of the completed wafer has become thin, and the density of the bumps has been increased, which makes it difficult to peel off the tape. In addition, when the peelability is secured, the adhesion is insufficient and the grinding water invades or remains in the grinding at the time of grinding the back side. Further, since the pressure-sensitive adhesive adheres to the surface of the wafer, contamination of the organic material tends to occur and adhesion of the underfill is also deteriorated, and the yield is not improved when packaging is performed.
On the other hand, in the semiconductor device connected to the flip chip, when used as it is in packaging, the electrode of the connection portion is exposed to the air, and since the difference in thermal expansion coefficient between the chip and the substrate is large, A large stress is applied to the connection portion of the semiconductor device, and there is a problem in reliability of mounting.
In order to solve these problems, in order to improve the reliability of the bonding portion after connecting the bump and the substrate, the gap between the semiconductor element and the substrate is filled with a resin such as underfill or NCP (Non Conductive Paste) A method of fixing the element and the substrate is adopted.
In general, semiconductor devices that perform flip-chip mounting have a large number of electrodes, and electrodes are disposed around semiconductor devices due to problems in circuit design. Therefore, when the resin paste is filled as the underfill, if the liquid resin is flowed from the interelectrode between the semiconductor elements into the capillary phenomenon, the resin is not sufficiently spread evenly and all the insects are liable to be generated, As a result, there has been a problem that the operation failure and the resistance to humidity are low. In addition, if the chip size is small, contamination of the substrate due to protrusion of the liquid resin, or if the pitch between the electrodes becomes narrow, it becomes difficult to flow the resin. In addition, since it takes too much time to fill the resin into each flip-chip connected semiconductor element, there is also a problem in productivity. On the other hand, in the method of separating the wafer chips after the film-shaped adhesive (NCF: Non Conductive Film) is thermocompression bonded all at once, the process is simplified and advantageous compared with the case of filling the resin paste. However, as the thickness of the wafer becomes thin, it is liable to cause wafer damage at the time of thermocompression bonding. Therefore, it is necessary to grind the back surface of the wafer after the film-shaped adhesive (NCF) is thermocompression bonded to the thick wafer. Therefore, the number of processes increases, which is not efficient.
On the other hand, in the combination of the conventional adhesive tape for back grinding (a tape having a pressure-sensitive adhesive layer on a base film) and an adhesive film (adhesive layer), the affinity between the pressure-sensitive adhesive layer and the adhesive layer (adhesive tape and adhesive film) , The peeling force for peeling off the adhesive tape (pressure-sensitive adhesive layer) from the wafer after grinding the back side of the wafer tends to rise, and the wafer tends to be damaged in the peeling step. Further, in order to increase the filling property of the adhesive film on the uneven substrate to improve the adhesion reliability, it is necessary to lower the melt viscosity at the time of heat bonding, but the peeling force from the adhesive tape tends to increase by heating and fusion And there is a problem that peeling from the adhesive tape after heat bonding becomes difficult.
(See
The present invention relates to a semiconductor chip having a bump electrode used in a flip chip mounting step and a method for manufacturing a semiconductor chip for performing chip grinding (singulation) at the same time or a subsequent step Thus, it is an object of the present invention to provide a method of manufacturing a semiconductor chip with high accuracy and simplicity without using underfill, NCP, or NCF.
Another object of the present invention is to provide a surface protective tape for thin film grinding used in the above method.
The present inventors have conducted various investigations for overcoming the problems in the flip chip mounting process. As a result, the present inventors have found that a bump portion wafer circuit substrate having a height of 100 μm or less and a bump portion wafer substrate having a thickness of 200 μm or less, In the process of grinding into a thin film of a wafer and forming a chip thereon, the bump portion is previously formed in the wafer in the form of a modified layer (a layer including a modified portion with a predetermined depth from the wafer surface, And a surface protection tape laminated with an adhesive film and an adhesive tape is laminated thereon, and the back side of the wafer is subjected to grinding to form a thin film and a chip And when the pickup is picked up or picked up on the pick-up tape for transfer It has been found that flip chip mounting can be easily performed by bonding only the adhesive film to a chip and transferring or picking up the same, and it is found that mounting reliability can be improved and the process can be shortened compared with the conventional process, and based on this finding, .
That is, according to the present invention, the following means are provided.
(1) A method for manufacturing a semiconductor chip in which a bump portion having a bump as an electrode is formed on a semiconductor wafer on which a semiconductor circuit is formed, a modified layer is formed in the wafer, the back surface of the semiconductor wafer is ground, As a method,
A surface protective tape for thin-film grinding in which an adhesive film is laminated on a pressure-sensitive adhesive layer of an adhesive tape having a pressure-sensitive adhesive layer on a base film, after the modifying layer is formed and before the back surface of the semiconductor wafer is ground, A step of sticking (sticking) the side of the adhesive film to the side where the semiconductor circuit is formed,
A step of making only the adhesive film adhere to the chip when the semiconductor wafer is picked up after the back grinding of the semiconductor wafer or transferred to the pickup tape.
(2) The semiconductor chip according to (1), wherein the step of attaching only the adhesive film to the chip is a step of picking up directly from the surface protection tape without using a transfer film (pickup tape) ≪ / RTI >
(3) The process for manufacturing a semiconductor chip according to (1) or (2), which comprises simultaneously dividing the adhesive film and the chip by expanding the surface protective tape for thin film grinding Way.
(4) The semiconductor chip according to (1) or (2), wherein only the adhesive film of the surface protection tape for thin-film grinding is divided by a laser after the chip is divided by the back grinding of the semiconductor wafer Gt;
(5) A surface protective tape for thin-film grinding, comprising an adhesive film laminated on a pressure-sensitive adhesive layer of an adhesive tape having a pressure-sensitive adhesive layer on a base film,
Wherein the adhesive film has a modulus of elasticity at 250 占 폚 of 10 MPa or less and a saturated moisture absorptivity of 1.5% by volume or less and at least one selected from the group consisting of a (meth) acrylic copolymer and a phenoxy resin is used as an adhesive Wherein the surface protective tape comprises a single layer or a plurality of layers.
(6) The surface protective tape for thin-film grinding described in (5), wherein the pressure-sensitive adhesive layer is of ultraviolet curing type.
(7) The surface protective tape for thin-film grinding according to (5) or (6), wherein the pressure-sensitive adhesive layer comprises a (meth) acrylic copolymer as a main component and a gel fraction of 80% or more.
(8) The surface protection for thin film grinding according to any one of (5) to (7), wherein the adhesive film has a surface free energy of 25 to 45 mN / m and a saturation moisture absorption rate of 1.5% tape.
(9) The adhesive film according to any one of (1) to (9), wherein the adhesive film comprises an epoxy resin, and the epoxy resin is at least one selected from the group consisting of glycidyl ether epoxy resin, glycidyl amine epoxy resin, glycidyl ester epoxy resin and alicyclic epoxy resin The surface protective tape for thin film grinding described in any one of (5) to (8), wherein the resin is one resin.
(10) The surface protective tape for thin-film grinding described in any one of (5) to (9), wherein the adhesive film contains a bisphenol-based resin.
(11) The surface protective tape for thin-film grinding according to (10), wherein the bisphenol-based resin is at least one selected from the group consisting of bisphenol F diglycidyl ether resin and bisphenol A diglycidyl ether resin.
(12) The positive resist composition according to any one of (5) to (11), wherein the adhesive film contains an inorganic filler and the content thereof is less than 60 parts by mass based on 100 parts by mass of the resin component in the adhesive film. And the surface protective tape for thin grinding.
(13) The thin film grinding method described in any one of (5) to (12), wherein the adhesive film contains a compound having a functional group capable of crosslinking with an isocyanate curing agent or an epoxy curing agent, Surface protective tape.
In the present invention, the modified layer refers to a layer including a modified portion at a predetermined depth on the surface of the wafer provided corresponding to the position where the wafer is divided at the time of chip formation. In this modified portion, low.
The term "pressure-sensitive adhesive" as used herein means an agent capable of exclusively adhering, while being capable of being exfoliated by being added to a treatment such as curing after adhesion. For example, the " radiation-curable pressure-sensitive adhesive " means a pressure-sensitive adhesive which is cured by irradiation with radiation such as ultraviolet rays after application to a wafer or the like, thereby enabling peeling.
According to the present invention, after a modified layer is formed in a semiconductor wafer, a thinning process is performed by a back grind process, and a process for manufacturing a semiconductor chip for dividing into chips is performed at the same time or a subsequent process, A simple manufacturing method is also provided.
Further, according to the present invention, there is provided a surface protective tape for thin-film grinding suitably used in the above-described semiconductor chip manufacturing method.
These and other features and advantages of the present invention will become more apparent from the following description, with reference to the accompanying drawings appropriately.
BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic diagram of a first half of a process of a preferred embodiment of the method for manufacturing a semiconductor chip of the present invention.
2 is a schematic diagram showing an example of transfer to a pickup tape during the latter half of the process of the preferred embodiment of the method for manufacturing a semiconductor chip of the present invention.
Fig. 3 is a schematic diagram showing an example of a case where transfer is not performed during the latter half of the process of the preferred embodiment of the method for manufacturing a semiconductor chip of the present invention.
<< Surface protective tape for thin film grinding >>
The surface protective tape for thin-film grinding (hereinafter simply referred to as "surface protective tape") of the present invention is obtained by laminating an adhesive film (adhesive layer) on a pressure-sensitive adhesive layer of an adhesive tape having a pressure- The surface protection tape for thin film grinding is composed of an adhesive tape for the purpose of protecting the wafer surface (circuit) and an adhesive film for bonding the chip.
<Base film>
The thickness of the base film is not particularly specified but is preferably 10 to 200 占 퐉 in view of manufacturability. In view of the warping at the time of grinding, 25 to 150 mu m is more preferable. If the base film is too thin, the rigidity as a tape is lost, so that sagging easily occurs and it is connected to the female contact by sagging when the cassette is stored. On the other hand, if the base film is too thick, there is a case where the bending is likely to occur due to release of residual stress at the time of film production.
Examples of the material of the base film of the present invention include polyolefins such as polyethylene, polypropylene and polybutene; ethylene-based polymers such as ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer and ethylene- (meth) A polymer material such as a copolymer, a flexible polyvinyl chloride, a polyethylene terephthalate, a polyethylene naphthalate, a semi-rigid polyvinyl chloride, a polyester, a polyurethane, a polyamide, a polyimide, a natural rubber and a synthetic rubber is preferable. The base film can also be used as a single layer film or as a double layer film in which two or more films are laminated.
Further, the base film is preferably visible light-transmissive, and more preferably is radiation-transmissive.
And the step of transferring to the pickup tape for split splitting after the back side grinding, the base film may be a rigid base film. As the rigid base film, a synthetic resin film is preferably used in view of water resistance, heat resistance, rigidity and the like. Specific examples of the rigid base material include polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyamide, polyacetal, polycarbonate, modified polyphenylene oxide, polyphenylene sulfide, polysulfone, wholly aromatic poly Ester, polyether ketone, polyimide, biaxially oriented polypropylene and the like are used. The rigid base film may be a single-layered product of the various films described above, or may be a laminated product. Among the above, it is preferable that the rigid base material does not adversely affect the wafer, such as ion contamination. Specifically, it is preferable that the rigid base material is made of polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, biaxially oriented polypropylene, Polyamides are particularly preferred. By using the rigid base film, it is possible to have an orthometric force against the warp of the wafer, and warpage can be suppressed.
The thickness of the rigid base film is preferably 25 to 100 占 퐉, from the viewpoint of the corrective force of warp and the peelability. If it is too thin, the correction force is weak and the suppression of warpage may become insufficient. If the thickness is too large, the tape may not be bent at the time of peeling off the tape, and a load may be applied to the wafer, which may cause wafer cracking.
In the case of not including the step of transferring to the pick-up tape for split splitting after the back grinding but also the step of expanding as it is, the base film is preferably selected from polyolefin and polyvinyl chloride. More preferably, it is a polyolefin. This is because polyvinyl chloride is affected by contamination by bleed of a plasticizer or the like.
In the step of reforming the wafers by expand, the tensile stress on the surface protective tape for thin film grinding that is expanded is divided into those transferred to the wafer. Therefore, the following characteristics can be considered as the characteristics of the surface protection tape required to perform wafer division by expand.
1) Stiffness can be maintained even if deformed by expand
2) Transferring to the wafer without losing the stress imparted by the expanse
3) The surface protective tape does not break when deformed by expansion
Examples of the polyolefin include polyethylene, polypropylene, an ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene- (meth) ) Homopolymers or copolymers of? -Olefins such as a methyl acrylate copolymer, an ethylene- (meth) acrylic acid copolymer, and an ionomer, or a mixture thereof.
Particularly, in the case of a base film using an ionomer, a yield point (yield point) does not exist and uniform physical properties can be obtained in the direction of the surface protective tape (delivery) and in the width direction. Therefore, it is possible to uniformize the chip intervals that are separated in the case of division in Expand.
<Pressure-sensitive adhesive layer>
As a pressure-sensitive adhesive for use in the pressure-sensitive adhesive layer, a (meth) acrylic copolymer is preferable. In the present invention, the pressure-sensitive adhesive is not limited to this, and a pressure-sensitive adhesive layer may be formed by various pressure-sensitive adhesives. As such a pressure-sensitive adhesive, for example, a pressure-sensitive adhesive using a rubber, a silicone, a polyvinyl ether or the like as a base polymer may be used.
A crosslinking agent may be added in order to add cohesive force to these base polymers. Examples of the crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking agent, a metal chelating crosslinking agent, an aziridine crosslinking agent, and an amine resin in correspondence with the base polymer. In addition, the pressure-sensitive adhesive may contain various kinds of additive components, if desired, within the range in which the object of the present invention is not impaired.
As the pressure-sensitive adhesive, a pressure-sensitive adhesive of radiation curing type or heating foaming type can be used. As the radiation-curing type pressure-sensitive adhesive, a pressure-sensitive adhesive which is cured by ultraviolet ray, electron beam or the like and is easily peeled off when peeling can be used. As the hot-foaming adhesive, a pressure-sensitive adhesive which is easily peeled off by a foaming agent or an expanding agent by heating can be used. As the radiation-curable pressure-sensitive adhesive, for example, those described in JP-A-01-56112 and JP-A-07-135189 are preferably used, but not limited thereto. In the present invention, it is preferable to use an ultraviolet curable pressure sensitive adhesive. In this case, it is sufficient that it has a property of being cured by radiation and three-dimensionally reticulated. For example, for a rubber-based or (meth) acrylic pressure-sensitive base resin (polymer), at least two photopolymerizable carbon- Molecular compound having a double bond (an ethylenic double bond) (hereinafter referred to as a photopolymerizable compound) and a photopolymerization initiator are used.
The rubber-based or (meth) acrylic base resin is preferably a rubber-based polymer such as natural rubber or various synthetic rubbers, or a copolymer of a poly (meth) acrylic acid alkyl ester, a (meth) acrylic acid alkyl ester and other unsaturated monomers copolymerizable therewith (Meth) acryl-based polymer is used.
The initial adhesive force can be set to an arbitrary value by mixing an isocyanate-based curing agent into the above-mentioned pressure-sensitive adhesive. Specific examples of such a curing agent include polyvalent isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylene diisocyanate, 1,4- Xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexyl Methane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate and the like.
In the case of the ultraviolet curing type pressure-sensitive adhesive, by incorporating a photopolymerization initiator into the pressure-sensitive adhesive, the polymerization curing time and ultraviolet ray irradiation amount by ultraviolet irradiation can be reduced. Specific examples of such photopolymerization initiators include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, dibenzyl , Diacetyl,? -Chloroanthraquinone, and the like.
As the (meth) acrylic pressure-sensitive adhesive, those containing a (meth) acrylic polymer, preferably a (meth) acrylic polymer as a main component can be mentioned.
(Meth) acrylic polymer as a main component means that the (meth) acrylic polymer component is at least 50 mass% or more, preferably 80 mass% or more (100 mass% or less).
The (meth) acrylic polymer has a photopolymerizable carbon-carbon double bond (ethylenic double bond) at least in its side chain and can be cured by irradiation, and may further have functional groups such as an epoxy group and a carboxyl group.
The (meth) acrylic polymer having a photopolymerizable carbon-carbon double bond in its side chain may be produced by any method. For example, a (meth) acrylic polymer having a functional group (?) In its side chain and a (meth) Is preferably obtained by reacting a compound having a photochemically synthesized carbon-carbon double bond such as a diol and having a functional group (?) Capable of reacting with the functional group (?) Of the side chain of the (meth) acrylic polymer.
The group having a photochemically synthesized carbon-carbon double bond is not particularly limited as long as it has a non-aromatic ethylenic double bond, but any group may be used as long as it has a (meth) acryloyl group, a (meth) acryloyloxy group, (Meth) acryloyl group, and (meth) acryloyloxy group are more preferable, and a vinyl group (including styrene or substituted styrene) is preferable.
Examples of the functional groups (?) And (?) Include a carboxyl group, a hydroxyl group, an amino group, a mercapto group, a cyclic acid anhydride group (anhydride group), an epoxy group and an isocyanate group (-N═C═O).
Here, when one of the functional group (?) And the functional group (?) Is a carboxyl group, a hydroxyl group, an amino group, a mercapto group, or a cyclic acid anhydride group, the other functional group may be an epoxy group or an isocyanate group , One of the functional groups is a cyclic acid anhydride group, and the other functional group is a carboxyl group, hydroxyl group, amino group and mercapto group. When one of the functional groups is an epoxy group, the other functional group may be an epoxy group.
As the functional group (a), a carboxyl group and a hydroxyl group are preferable, and a hydroxyl group is particularly preferable.
The (meth) acrylic polymer having a functional group (?) In the side chain is preferably a (meth) acrylic monomer having a functional group (?), Preferably a (meth) acrylic ester [(having a functional group As a monomer component.
The (meth) acryl-based polymer having a functional group (?) In the side chain is preferably a copolymer, and the copolymerization component is preferably a (meth) acrylic acid alkyl ester, especially a polyester having a functional group (?) Or a photopolymerizable carbon- (Meth) acrylic acid alkyl ester which is not substituted with a group having a bond is preferable.
Examples of the (meth) acrylic esters include methyl acrylate, ethyl acrylate, n-propyl acrylate, n-butyl acrylate, isobutyl acrylate, n-pentyl acrylate, n-hexyl acrylate, , Isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, hexyl acrylate, and the corresponding methacrylates.
(Meth) acrylic acid esters may be used singly or in combination of two or more, but it is preferable to use a combination of those having 5 or less carbon atoms in the alcohol portion and those having 6 to 12 carbon atoms.
Further, as the monomer having a large number of carbon atoms in the alcohol part is used, the glass transition point (Tg) is lowered, so that a desired glass transition point can be produced. In addition to the glass transition point, it is also preferable to blend a low molecular weight compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile for the purpose of improving compatibility and various performances. In this case, The content of these monomer components is preferably within a range of 5 mass% or less.
Examples of the (meth) acrylic monomers having a functional group (?) Include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol Monoacrylates, glycol monomethacrylates, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylic A part of an isocyanate group of a polyisocyanate compound, an amide, a methacrylamide, a maleic anhydride, an itaconic anhydride, an anhydrous fumaric acid, a phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, And urethane of a monomer having a hydroxyl group or a carboxyl group and a photopolymerizable carbon-carbon double bond.
Among these, acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycidyl acrylate and glycidyl methacrylate are preferable, and acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates and 2-hydroxyalkyl methacrylates are more preferable, and 2-hydroxyalkyl acrylates and 2-hydroxyalkyl methacrylates are more preferable.
As the functional group (?) In the compound having the photochemically synthesized carbon-carbon double bond and the functional group (?), An isocyanate group is preferable and, for example, a (meth) acryloyl group having an isocyanate (-N═C═O) (Meth) acrylic acid alkyl ester substituted with an isocyanate (-N = C = O) group is preferable. Examples of such a monomer include 2-isocyanate ethyl methacrylate and 2-isocyanate ethyl acrylate.
In addition, preferred examples of the compound other than the isocyanate group of the functional group (?) Include the compounds exemplified as the (meth) acrylic monomers having the functional group (?).
The compound having a photochemically synthesized carbon-carbon double bond and a functional group (?) Is a polymer having a functional group (?) In the side chain of the polymer, in addition to a (meth) acrylic polymer having a functional group The polymerizable group can be introduced into the coalescence, and the adhesion after irradiation can be lowered.
In the synthesis of the (meth) acrylic copolymer, ketones, esters, alcohols, and aromatics may be used as the organic solvent in the case of performing the reaction by solution polymerization. Among these, toluene, ethyl acetate, isopropyl A solvent having a boiling point of 60 to 120 占 폚 is preferable as a good solvent for a (meth) acryl-based polymer such as alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone and methyl ethyl ketone. As the polymerization initiator, a radical generator such as an azobis system such as?,? '- azobisisobutyl nitrile, or an organic peroxide system such as benzoyl peroxide is usually used. At this time, a catalyst and a polymerization inhibitor can be used in combination in accordance with necessity, and a (meth) acrylic copolymer having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. As for controlling the molecular weight, it is preferable to use a solvent such as mercaptan and carbon tetrachloride. In addition, this reaction is not limited to solution polymerization, and other methods such as bulk polymerization, suspension polymerization and the like are acceptable.
As described above, a (meth) acrylic copolymer can be obtained. In the present invention, the molecular weight of the (meth) acrylic copolymer is preferably about 300,000 to 1,000,000. If the molecular weight is too small, the cohesive force of the irradiation becomes small, so that the pickup failure or the transfer failure tends to occur at the time of pickup or transfer to the pickup tape. Also, if the molecular weight is too large, the adhesive film peels off or deviates from the adhesive tape.
The molecular weight in the present invention refers to the weight average molecular weight in terms of polystyrene by a conventional method.
In the present invention, the introduction amount of the photopolymerizable carbon-carbon double bond of the (meth) acrylic copolymer is preferably 0.5 to 2.0 meq / g, more preferably 0.8 to 1.5 meq / g. If the double bond amount is too small, the effect of reducing the adhesive force after irradiation is reduced. If the double bond amount is too large, the flowability of the pressure-sensitive adhesive after the irradiation with radiation is not sufficient, and the device gap after stretching becomes insufficient, resulting in a problem that image recognition of each element becomes difficult at the time of pickup. In addition, the (meth) acrylic copolymer itself is insufficient in stability and is difficult to manufacture.
In the present invention, the gel fraction of the pressure-sensitive adhesive before curing can be adjusted by the average molecular weight of the (meth) acrylic copolymer and the curing agent blending amount, but is preferably 60% or more, more preferably 80 to 100% . When the gel fraction is too small, the cohesive force is lowered, so that the risk of causing a residual paste on the circuit surface of the wafer is increased. Further, if the (meth) acrylic copolymer has an OH group having a hydroxyl group (hydroxyl value) of 5 to 100, it is preferable because the risk of pick-up can be further reduced by reducing the adhesive force after irradiation. Also, it is preferable that the (meth) acrylic copolymer has a COOH group having an acid value of 0.5 to 30 to improve the stability of the tape, thereby facilitating the handling of the used tape storing type mechanism. Here, if the hydroxyl group value of the (meth) acrylic copolymer is too low, the effect of reducing the adhesive force after irradiation with radiation is not sufficient, and if it is too high, the flowability of the pressure sensitive adhesive after radiation irradiation is impaired. If the acid value is too low, the effect of improving the stability of the tape is not sufficient. If the acid value is too high, the flowability of the pressure-sensitive adhesive is impaired.
When the radiation-curing pressure-sensitive adhesive of the present invention is cured by ultraviolet irradiation, a photopolymerization initiator such as isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, Michler's ketone, , Chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethylketal,? -Hydroxycyclohexylphenylketone, 2-hydroxymethylphenylpropane and the like can be used. The blending amount of these photopolymerization initiators is preferably 0.1 to 10 parts by mass relative to 100 parts by mass of the (meth) acrylic copolymer. When the blending amount is too small, the reaction is insufficient, and when the blending amount is too large, the low molecular component is increased, which affects the staining property.
(Gel fraction)
The pressure-sensitive adhesive layer in the surface protective tape for thin-film grinding of the present invention preferably has a gel fraction of 80% or more. The gel fraction is more preferably 85 to 95%.
If the gel fraction is too low, the problem of remaining of the paste tends to occur. If the gel fraction is too high, the fluidity is lost and the adhesive property can not be exhibited.
The gel fraction can be measured as follows.
Two test pieces of 100 mm x 120 mm are cut out from the adhesive tape before lamination with the adhesive film and the mass of the adhesive tape is measured as the mass of the adhesive material after peeling the separator. A tape was fixed in a polypropylene container having a diameter to which the test piece was inserted and the pin was fixed with the adhesive side up. 500 ml of toluene was placed in the container so that the test piece was immersed in the solution, and then covered to prevent volatilization of the solvent. Gt; C < / RTI > environment for 24 hours.
After 24 hours, the solvent in the container was discarded while filtering with a mesh of mesh # 150 and then dried in an environment of 25 占 폚 for 24 hours while the tape was mounted in the container. After 24 hours, . The value calculated from the following calculation formula is taken as the gel fraction.
In addition, the mass of the base film is measured before measurement with an adhesive tape, or after the adhesive tape is made into an adhesive tape, the adhesive layer is peeled off and removed by a solvent or the like.
Gel fraction [%] = {(mass of adhesive tape after solvent extraction - mass of base material - mass of base material) / (mass of adhesive tape before solvent extraction - mass of base material)} x 100
<Adhesive Layer>
The adhesive layer of the present invention is a film obtained by previously laminating an adhesive, and is also referred to as an adhesive film in this specification. For example, any of polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, (Meth) acrylic resin, polyurethane resin, epoxy resin, poly (meth) acrylamide resin, melamine resin, and the like, or a mixture thereof may be used.
As the main component of the adhesive, a (meth) acrylic resin {(meth) acrylic copolymer} or a phenoxy resin is particularly preferable. The polyimide resin is excellent in the reliability of the mounting, but since the glass transition temperature is high, a sufficient fluidity is not obtained at the time of curing in many cases. The polyimide resin is not suitable for follow-up of unevenness such as bumps, Things become easy to happen. On the other hand, the (meth) acrylic copolymer and the phenoxy resin can secure the reliability at the time of assembly while securing the fluidity at the time of curing.
The polymerization method of the (meth) acrylic copolymer is not particularly limited, and examples thereof include pearl polymerization, solution polymerization, suspension polymerization and the like, and a copolymer is obtained by these methods. Suspension polymerisation is preferable because of excellent heat resistance. Examples of such (meth) acrylic copolymers include Parachlor W-197C (trade name, manufactured by Negami Kogyo KK) have.
Further, the (meth) acrylic copolymer preferably contains acrylonitrile. The content of acrylonitrile is preferably from 10 to 50 mass%, more preferably from 20 to 40 mass%, based on the (meth) acrylic copolymer. The acrylonitrile content is 10% by mass or more, whereby the Tg of the adhesive layer can be increased and the adhesion can be improved. If it is too large, the fluidity of the adhesive layer is deteriorated, and the adhesiveness may be lowered. The (meth) acrylic copolymer containing acrylonitrile as a component is preferably synthesized by suspension polymerization.
The (meth) acrylic copolymer may have a functional group in order to improve the adhesiveness. The functional group is not particularly limited, and examples thereof include an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, and a glycidyl group. Among them, a glycidyl group is preferable. Since the glycidyl group has good reactivity with the epoxy resin as the thermosetting resin and is hard to react with the pressure-sensitive adhesive layer as compared with the hydroxyl group and the like, the surface free energy is hardly changed. Examples of the (meth) acrylic copolymer having a glycidyl group include a glycidyl ether (meth) acrylic copolymer, a glycidyl amine (meth) acrylic copolymer and a glycidyl ester (meth) acrylic copolymer. It is preferable to include at least one of these, and it is more preferable to include at least two kinds thereof.
Examples of the phenoxy resin include a resin obtained by reacting a bifunctional phenol and an epihalohydrin to a high molecular weight or by adding a bifunctional epoxy resin and a bifunctional phenol to the middle portion, Resin. More specifically, the phenoxy resin can be obtained, for example, by reacting bifunctional phenols and epihalohydrin in the presence of a catalyst such as an alkali metal hydroxide at a temperature of 40 to 120 DEG C in a non-reactive solvent have. The phenoxy resin may be prepared by reacting a bifunctional epoxy resin and a bifunctional phenol with an amide-based, ether-based, or ketone-based compound having a boiling point of 120 ° C or higher in the presence of a catalyst such as an alkali metal compound, an organic phosphorus compound, , Lactones, alcohols, etc., by heating at 50 to 200 ° C under the condition that the reaction solid content is 50 parts by mass or less. The phenoxy resin may be used alone or in combination of two or more.
In the present invention, it is preferable that the component of the adhesive layer contains an epoxy resin. As such preferable epoxy resin, a glycidyl group or a group having a partial structure in which an epoxide ring is coordinated to an alicyclic ring is preferable. In particular, a glycidyl ether epoxy resin, a glycidyl amine epoxy resin, a glycidyl ester epoxy resin and an alicyclic epoxy resin are more preferable.
Among them, a glycidyl group or a resin substituted with a hydroxyl group (phenolic hydroxyl group) of a bisphenol-based resin is preferable among the groups having a partial structure in which an epoxycycline ring has an alicyclic ring.
Examples of such bisphenol-based epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol AD type epoxy resins, and bisphenol S type epoxy resins.
Among these bisphenol-based epoxy resins, bisphenol F glycidyl ether resin and bisphenol A glycidyl ether resin are preferable.
In the present invention, it is particularly preferable to use a combination of two or more kinds of bisphenol-based epoxy resins having different structures, and it is most preferable to use a combination of a bisphenol F glycidyl ether resin and a bisphenol A glycidyl ether resin.
By using two or more types of bisphenol-based epoxy resins having different structures from each other, it is possible to achieve both of the fluidity for embedding unevenness such as bumps and the hardenability for bonding reliability.
The blending amount of the epoxy resin in the adhesive layer is preferably 15 to 35 mass% of the entire resin.
The adhesive layer may contain an inorganic filler. The content of the inorganic filler is preferably less than 60 parts by mass, more preferably 50 parts by mass or less, and more preferably 30 parts by mass or less, based on 100 parts by mass of the resin component, Parts by mass or less. If the particle diameter is large, irregularities are formed on the surface of the adhesive surface and adhesiveness is lowered. Therefore, the average particle diameter of the inorganic filler is preferably less than 1 mu m, more preferably less than 0.5 mu m, and still more preferably less than 0.1 mu m. The lower limit of the particle diameter of the inorganic filler is not particularly limited, but it is practically 0.003 탆 or more. As the inorganic filler, it is necessary to have an insulating property and a thermal conductivity, and examples thereof include a nitrogen compound (boron nitride, aluminum nitride, silicon nitride, carbon nitride and titanium nitride), a carbon compound (silicon carbide, fluorocarbon, Titanium carbide, tungsten carbide, diamond, etc.), metal oxides (silica, alumina, magnesium oxide, zinc oxide, beryllium oxide and the like).
The adhesive layer controls the surface free energy difference and can be used as a surface protective tape for wafer processing having an adhesive layer having sufficient adhesiveness even after being peeled off after adhering to the pressure sensitive adhesive layer once.
In the surface protective tape for thin-film grinding according to the present invention, the surface free energy of the adhesive layer is preferably 25 to 45 mN / m. If the surface free energy is too small, the wettability is insufficient, so that voids are easily generated and the reliability of the mounting is deteriorated. On the other hand, if it is too large, the tape is surely adhered to the adhesive tape, so that the tape can not be transferred to the pickup tape or a pickup failure is caused.
The surface free energy of the adhesive layer is preferably 30 to 40 mN / m, more preferably 30 to 40 mN / m, and the difference in surface free energy with the pressure-sensitive adhesive layer is within 10 mN / m .
The surface heavy energy can be adjusted by changing the structure, kind and blending amount of the resin which is the main component of the adhesive film. Further, it can be adjusted by adding an additive such as a drying condition or a surfactant at the coating (coating).
The surface free energy can be measured in the following manner.
(Measurement of surface free energy)
In the present invention, the surface free energy of the adhesive layer is preferably 25 to 45 mN / m as described above. The surface free energy of the adhesive layer can be obtained by measuring the contact angle (?) Using a contact angle meter, for example, FACE contact angle meter CA-S150 (trade name) manufactured by Kyowa Hakko Kikusui Co., . The evaluation conditions at this time are the droplet volume: 2 μL of water, 3 μL of diiodomethane, and the reading time: 30 seconds after dropping. The surface free energy can be obtained by substituting the value of the contact angle into the following equation.
γ s : surface free energy γ s p : polar component of surface free energy
γ s d : Dispersion component of surface free energy
θ H : the contact angle of water to the solid surface
θ I is the contact angle of diiodomethane to the solid surface
(Molecular Weight)
In the present specification, the term "molecular weight" refers to a weight average molecular weight and is measured by a gel permeation chromatography (GPC) method using a calibration curve with standard polystyrene.
[Measurement conditions by GPC method]
Apparatus used: high performance liquid chromatography LC-20AD (trade name, manufactured by Kabushiki Kaisha Shimazu Shimazu Seisakusho)
Column: Shodex Column GPCKF-805 [trade name, manufactured by Shimadzu Seisakusho Co., Ltd.]
Eluent: chloroform
Measuring temperature: 45 ° C
Flow rate: 3.0 ml / min
RI detector: differential refraction index detector RID-10A [trade name, manufactured by Shibazuma Seisakusho Co., Ltd.]
(Acid value)
The acid value is measured in accordance with 11.1 of JIS K5407.
(a) Reagent
· Bromothymol blue indicator
· 0.01 N potassium hydroxide-ethanol solution
· Acetone reagent grade 1
(b) Operation
Approximately 10 g of the sample is precisely weighed into an Erlenmeyer flask, dissolved in 50 ml of acetone, and 3-4 drops of bromothymol blue indicator. This is titrated with 0.01 N potassium hydroxide-ethanol solution.
(c) Calculation
The acid value is obtained by the following equation.
V: Appropriate amount of 0.01 N potassium hydroxide-ethanol solution (ml)
f: factor of 0.01 N potassium hydroxide-ethanol solution
S: Sample weight
(Hydroxyl group)
The measurement of the hydroxyl value is performed in accordance with JIS K0070.
(a) Reagent
· Acetylation reagent (acetic anhydride-pyridine)
· N / 2 potassium hydroxide-ethanol solution
(b) Operation
After acetylation of the sample with an acetylating reagent, excess acetic acid is titrated with N / 2 potassium hydroxide-ethanol solution.
(c) Calculation
The hydroxyl value is obtained by the following equation.
V: Appropriate amount (ml) of N / 2 potassium hydroxide-ethanol solution of this test
VB: Amount (ml) of N / 2 potassium hydroxide-ethanol solution in blank test
F: Factor of N / 2 potassium hydroxide-ethanol solution
S: Amount of sample (g)
AV: acid value of the sample (mgKOH / g)
(Elastic modulus)
The adhesive layer can improve the adhesion to the uneven surface such as the bump by controlling the elastic modulus. In the surface protective tape for thin-film grinding of the present invention, the modulus of elasticity at 25 캜 after curing of the adhesive layer is preferably in the range of 1 to 1000 MPa, more preferably 1 MPa or more and 10 MPa or less. The elastic modulus of the adhesive layer at 250 캜 is preferably in the range of 1 to 1000 MPa. Further, it is preferable that the ratio of the elastic modulus at 25 占 폚 and the elastic modulus at 250 占 폚 of the adhesive layer is 100 or less. That is, even if the modulus of elasticity is increased by curing, it is preferable that the modulus (modulus of elasticity after curing) (modulus of elasticity before curing) is 100 or less. Since the adhesive film needs to be excellent in the filling property before bonding, it is made low elasticity. Next, when the resin is cured at the time of bonding with the substrate, if the elastic modulus is too high at this time, the warpage becomes large, which causes the chip to warp. When the modulus of elasticity is too low, the cured product is not sufficiently cured, so that the reliability of the mounting is insufficient. Further, most of them are subjected to reflow heat treatment for packaging after adhering the chip and the substrate. Therefore, it is preferable that the same elastic modulus is obtained even at the reflow heating temperature, and the change in elastic modulus before and after heating is preferably small. More preferably, the change in the elastic modulus at 25 占 폚 and the elastic modulus at 250 占 폚 (absolute value of difference) is 100 or less.
The elastic modulus can be measured in the following manner.
The modulus of elasticity is measured using a viscoelasticity measuring device ARES (trade name) manufactured by Rheometric Scientific FE Co., Ltd. A plate having a diameter of 8 mm? Is laminated on the measurement plate, and a film adhesive is laminated and the plate having a thickness of about 1 mm is punched with a punch of 8 mm ?. The measurement conditions are set at room temperature of 25 占 폚 and 250 占 폚 at a frequency of 1 Hz. The temperature rise condition at the time of measurement at 250 占 폚 is 10 占 폚 / min.
(Saturated moisture absorption rate)
The saturated moisture absorption rate of the adhesive layer is preferably 1.5% by volume or less, more preferably 1.0% by volume or less. The lower limit value of the saturated moisture absorption rate is not particularly limited, but is usually 0% by volume or more. When the isocyanate-based curing agent is used in the curing agent, there is a possibility that the crosslinking structure is changed by reacting with moisture, and curing (curing) by heating the absorbed adhesive layer generates bubbles due to evaporation of water, And problems such as lack of adhesion are caused.
The method of measuring the saturated moisture absorption rate is as follows.
A circular film-like adhesive layer (adhesive film) having a diameter of 100 mm was used as a sample, and the sample was dried in a vacuum drier at 120 DEG C for 3 hours. After cooling in a desiccator, the dry mass was measured and measured by M1 do. The sample is absorbed in a constant temperature and humidity bath at 85 占 폚 and 85% RH, taken out, and quickly weighed. When the weighing value becomes constant, its mass is M2.
The saturated moisture absorption rate (capacity%) is calculated from the density d of the adhesive (film-like adhesive layer) and the dry mass M1 and the moisture absorption mass M2.
Saturated moisture absorption rate (capacity%) = [(M2-M1) / (M1 / d)] 100
It is preferable that the adhesive layer has a functional group capable of crosslinking with an isocyanate-based curing agent or an epoxy-based curing agent and includes a compound having a flux function as a curing agent.
The flux is generally a material used for raising the wettability of the bump, and a rosin-based material is preferably used as a material having a flux function.
In the present invention, a compound having both a carboxyl group and a phenolic hydroxyl group, or both a carboxyl group and a phenol hydroxyl group is preferable, as long as it acts to remove the oxide film on the solder surface. It is more preferable to use a compound having both a carboxyl group and a phenol hydroxyl group as a curing agent.
Examples of the compound having a flux activity having a phenolic hydroxyl group include phenols, and specific examples thereof include phenol, o-cresol, 2,6-xylenol, p-cresol, m- ethylphenol, 2,4-xylenol, 2,5-xylenol, m-ethylphenol, 2,3-xylenol, meditol , 3,5-xylenol, p- tertiarybutylphenol Bisphenol A, bisphenol F, bisphenol AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, bisphenol A, And monomers containing a phenolic hydroxyl group such as tetrakisphenol.
Examples of the curing agent having a flux function include a curing agent of an epoxy resin, an aliphatic dicarboxylic acid, and an aromatic dicarboxylic acid.
As the curing agent having a flux function, more specifically, for example, a curing agent having two or more phenolic hydroxyl groups which can be added to the epoxy resin and one or more phenolic hydroxyl groups directly bonded to an aromatic group exhibiting a flux action (reducing action) And a compound having a carboxyl group. Examples of the curing agent having such a flux activity include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, Benzoic acid derivatives such as 4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); Naphthoic acid such as 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid and 3,7-dihydroxy- derivative; Phenolphthalline; And diphenolic acid. These may be used singly or in combination of two or more kinds.
The blending amount of the curing agent (crosslinking agent) having flux activity is preferably 0.5 to 30 parts by mass, more preferably 1 to 10 parts by mass, per 100 parts by mass of the resin component of the adhesive layer.
<< Method of Manufacturing Semiconductor Chip >>
Hereinafter, a method of manufacturing a semiconductor chip using the surface protection tape for thin-film grinding according to the present invention will be described.
A method of manufacturing a semiconductor chip according to the present invention is a method of manufacturing a semiconductor chip comprising the steps of: forming a modified layer in a bump portion having a bump as an electrode on a semiconductor wafer having a semiconductor circuit formed thereon; grinding the back surface of the semiconductor wafer; A method of manufacturing a semiconductor chip,
A surface protective tape for thin-film grinding in which an adhesive film is laminated on a pressure-sensitive adhesive layer of an adhesive tape having a pressure-sensitive adhesive layer on a base film after grinding the back surface of the semiconductor wafer A process of attaching the protective tape to the side of the semiconductor wafer on which the semiconductor circuit is formed on the side of the adhesive film,
And a step of making only the adhesive film adhere to the chip when the semiconductor wafer is picked up after the back grinding of the semiconductor wafer or transferred to the pickup tape.
In the present invention, it is preferable that the step of attaching only the adhesive film to the chip is a step of picking up directly from the surface protection tape without using a transfer film (pickup tape).
It is also preferable to include a step of splitting the adhesive film and the chip at the same time by expanding the surface protective tape for thin film grinding.
Further, it is preferable that only the adhesive film of the surface protective tape for thin-film grinding is divided by laser after the chip is divided by the back grinding of the semiconductor wafer.
Hereinafter, a method of manufacturing a semiconductor chip of the present invention will be described with reference to the drawings. In the drawings, the same reference numerals denote the same members.
A method of manufacturing a semiconductor chip includes a method of passing through a process of transferring to a pickup tape and a process of passing through a process of transferring to the pickup tape.
1 schematically shows the first half of the process of a preferred embodiment of the method of manufacturing a semiconductor chip of the present invention and shows a method of transferring to the pickup tape and a process of not transferring the pickup tape to the pickup tape It is a general process that is common to both methods.
Fig. 2 is an example of a process in the second half after the process in Fig. 1 (4) in the method through the process of transferring to the pickup tape, and Fig. 3 shows an example of the process in the process through the process not transferring to the pickup tape 1 is an example of a process of the second half after the process of (4) in Fig.
[I] Process of transferring to pickup tape
Hereinafter, a description will be given using Figs. 1 and 2. Fig.
(1) First, the modified
In order to divide the semiconductor wafer into semiconductor chips, a step of forming a modified region (modified
A phenomenon of optical damage due to multiphoton absorption occurs due to the irradiation of the laser beam and thermal deformation is induced in the inside of the semiconductor wafer by the optical damage, Region) 2A is formed. Examples of the laser light (laser beam) used in this case include Nd: YAG laser, Nd: YVO laser, Nd: YLF laser, titanium sapphire laser, etc. which generate pulsed laser light.
The thickness of the reforming
(2) The surface protective tape for surface grinding of the present invention (surface protective tape) of the present invention is adhered to the
At this time, the adhesive layer (adhesive film) 6 side of the surface protective tape for thin-film grinding is adhered to the side of the semiconductor wafer 1 on which the modified
(3) Grinding the surface (back side) 1B opposite to the surface to which the surface protective tape for thin-film grinding is attached, of the semiconductor wafer. In the figure,
(4) Finishing the back grinding in the state of grinding to the target thickness. In the figure,
(5-1) A
Since the pick-up tape is required to have excellent pickup performance and expandability in the pick-up process, it is preferable to use a dicing tape.
As the pressure-sensitive adhesive for the pressure-sensitive adhesive layer of the dicing tape, a general pressure-sensitive adhesive for use in a dicing tape can be used, and preferably an adhesive which is cured by irradiation with ultraviolet radiation is used.
As the ring frame, those used in a general semiconductor wafer processing process can be used.
(6-1) Only the adhesive tape 3 (the
(7-1) Extend the pickup tape.
At this time, there are two expand methods. (7-1A) the adhesive film (adhesive layer) and the semiconductor wafer are divided, or (7-1B) the semiconductor wafer is only divided and then the adhesive film Layer) is cut by the
In order to achieve the above (7-1A) or (7-1B), it is possible to adjust by changing the Expand condition.
In other words, in the case of expanding the adhesive film (7-1A), since a certain amount of expanding is required, it is possible to divide the adhesive film at the same time by increasing the expending amount. On the other hand, in the case of Expand only in chip (7-1 B), since the chip is rigid, the amount of expense may be small. By arbitrarily adjusting the expand amount in this way, the state of (7-1A) or (7-1B) can be obtained.
In the figure,
(8-1) The divided
[II] Process for not transferring to the pickup tape
Hereinafter, a description will be given using Figs. 1 and 3. Fig. (1) to (4) are the same as the process [I] for transferring onto the above-mentioned pickup tape.
(1) First, the modified
(2) A surface protective tape for surface grinding (surface protective tape) of the present invention is adhered to the surface of a semiconductor wafer. At this time, the adhesive layer (adhesive film) 6 side of the surface protective tape for thin-film grinding is adhered to the side of the semiconductor wafer 1 on which the modified
(3) Grinding the surface (back side) 1B opposite to the surface to which the surface protective tape for thin-film grinding is attached, of the semiconductor wafer.
(4) The back grinding is finished in the state (10) in which the grinding is completed with the target thickness.
(5-2) The fixing
Here, the fixing
(6-2) The fixing
The speed of the expand is preferably 0.5 to 5 mm / second, and the expand amount is preferably 5 to 20 mm.
In the figure,
(7-2) The divided
INDUSTRIAL APPLICABILITY The manufacturing method using the surface protective tape for thin-film grinding according to the present invention exhibits a remarkable effect when thin-film grinding a wafer having concave and convex portions such as bumps as an electrode.
By using the manufacturing method of the present invention, it is possible to omit the dicing step after the back side grinding. Further, by using the surface protective tape for thin-film grinding according to the present invention, it is possible to omit the step of flowing the underfill, so that the resin leakage due to the underfill does not occur and the yield is improved.
An important performance in the thinning of a chip is the strength of the chip. As a general method of dicing after ground grinding, dicing by a blade or dicing by a laser is a process of damaging a semiconductor wafer that has become a thin film, so that damage to the obtained chip is likely to remain, and chipping Or in the worst case, the chip is broken. On the other hand, by using the manufacturing method of the present invention, it is possible to minimize the damage to the semiconductor chip, increase the anti-stiffness of the chip, and prevent cracking of the chip, .
When a semiconductor chip is mounted on a substrate, chip breakage is likely to occur particularly because a thin film semiconductor chip with unevenness such as a bump is pressed thereon. On the other hand, by using the manufacturing method of the present invention, since the semiconductor chip is mounted in a state that the adhesive film (adhesive layer) is adhered to the semiconductor chip, occurrence of chip breakage can be suppressed. In addition, since bonding can be performed with an adhesive film (adhesive) at the same time as mounting, the manufacturing time can be shortened.
In the present invention, semiconductor chips may be transferred to a pickup tape after chip formation, and a semiconductor device may be manufactured (steps of FIGS. 1 and 2) desirable. It is possible to omit the peeling step of the adhesive tape by picking up without transferring, and also the damage to the semiconductor chip can be reduced because it is released from the stress to be caused in peeling.
In the present invention, the wafer after thin-film grinding may be subjected to chip division by pressing the roll against the wafer (not shown) or by pushing the pushing blade from above the reformed layer (not shown) (Step (7-1A) of FIG. 2, step (6-2) of FIG. 3) may be performed. Since no external stress is applied, a method of dividing by Expand is preferable.
[Example]
Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited thereto.
Example 1
(I) Fabrication of surface protective tape for thin film grinding
An ultraviolet curable (meth) acrylic pressure sensitive adhesive layer was provided on a base film made of an ethylene-acrylic acid copolymer having a thickness of 100 m and an adhesive layer made of a (meth) acrylic copolymer containing an epoxy resin was provided on the pressure sensitive adhesive layer To prepare a surface protective tape for thin film grinding of the present invention.
(1) Production method of adhesive tape
78 mol% of 2-ethylhexyl acrylate, 21 mol% of 2-hydroxyethyl acrylate and 1 mol% of methacrylic acid, and copolymerized in an ethyl acetate solution to obtain a copolymer solution having a weight average molecular weight of 700,000 . 5.0 parts by mass of 2-methacryloyloxyethyl isocyanate (trade name, product of Showa Denko KK) were mixed with 100 parts by mass of this copolymer in a solution, An acrylic copolymer polymer having a double bond-containing group was synthesized by adding a double bond-containing group derived from the isocyanate to the hydroxyl group of the polymer side chain.
To 100 parts by mass of the acrylic copolymer polymer having the double bond-containing group, 6.0 parts by mass of Colonate L (trade name, available from Nippon Polyurethane Industry Co., Ltd.) as a curing agent, 5.0 parts by mass of Irgacure 184 (trade name, manufactured by BASF Japan Ltd.) as an initiator was blended to obtain a pressure-sensitive adhesive composition.
The obtained pressure-sensitive adhesive composition was coated on a release liner so that the pressure-sensitive adhesive layer had a thickness of 20 mu m, and an ethylenic ionomer resin (trade name: DUPONT-MITSUI POLYCHEMICALS CO., LTD. , LTD.) Was adhered to a base film having a thickness of 100 탆 and made into a film to obtain an adhesive tape.
(2) Method of producing adhesive layer and surface protective tape
40 mol% of butyl acrylate, 30 mol% of ethyl acrylate and 30 mol% of acrylonitrile were copolymerized in a mixed solution of ethyl acetate and toluene to obtain an acrylic resin.
50 mol% of dicyandiamide and 50 mol% of bisphenol F type epoxy resin were mixed in a mixed solution of ethyl acetate and toluene and copolymerized to obtain a cured epoxy resin.
35 mol% of bisphenol A type epoxy resin, 35 mol% of bisphenol A type phenoxy resin and 30 mol% of bisphenol A diglycidyl ether were copolymerized and copolymerized to obtain a phenoxy resin.
30 parts by mass of the obtained acrylic resin, 50 parts by mass of a cured epoxy resin, and 20 parts by mass of a phenoxy resin were mixed and mixed in an ethyl acetate solution. With respect to 100 parts by mass of the obtained mixed resin, 5 parts by mass of silica particles having an average particle size of 5 탆 as an inorganic filler were compounded in this solution to obtain an adhesive composition.
The obtained adhesive composition was coated on a release liner so that the thickness of the adhesive layer was 70 占 퐉 and attached to the side of the adhesive layer of the adhesive tape on which the release liner was peeled off to obtain a surface protective tape for thin film grinding . At the time of use below, this release liner was peeled off and used.
(II) Manufacturing of semiconductor chips
A semiconductor chip was fabricated by the processes shown in Figs. 1 and 2.
(1) A
Bump height: 80 占 퐉, pitch: 160 占 퐉, bump type: solder
Thickness of the modified layer (modified
(2) The surface protective tape for thin film grinding prepared above was stuck to the
(3) The surface (back side) 1B opposite to the surface to which the surface protective tape for thin film grinding was applied (back side) of the semiconductor wafer was polished by DGP8761 (trade name, Discoloration Grinding Machine, Disco Co., .
(4) After the grinding, the
Further, the pick-up
(5) After the ultraviolet irradiation, only the adhesive tape 3 (the
(6) The
(7) The divided
Example 2
Except that the surface protective tape for thin film grinding produced in Example 1 was used and the process of (6) in Example 1 was changed to the process of (6-1) to (6-2) A semiconductor chip was manufactured in the same manner.
(6-1) The
(6-2) After the expanding, the adhesive film (adhesive layer) 6 was cut off by the
Example 3
A semiconductor chip was fabricated by the processes shown in Figs. 1 and 3.
(4) to (7) in place of (4) to (7) after the processes (1) to (3) in Example 1 were carried out using the surface protective tape for thin- (6A) was performed to fabricate a semiconductor chip.
(4A) The same expandable tape 11 (fixing tape 21) as that of Example 1 was stuck to the
(5A) The fixing
(6A) The divided
[Comparative Example 1]
(I) Method for producing conventional surface protective tape for bumps
20 mol% of methacrylic acid, 30 mol% of 2-ethylhexyl acrylate, 10 mol% of 2-hydroxyethyl acrylate and 40 mol% of methyl acrylate were combined and copolymerized in an ethyl acetate solution, A copolymer solution having a weight average molecular weight of 60,000 was obtained.
To 100 parts by mass of the copolymer, 100 parts by mass of a 5-functional urethane acrylate oligomer as a UV-reactive resin, 10 parts by mass of a trifunctional urethane acrylate oligomer and 30 parts by mass of a bifunctional urethane acrylate oligomer , 4.0 parts by mass of Colonate L (trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.) as a curing agent, 5 parts by mass of Irgacure 184 (trade name, BASF SHUSA) as a photoreaction initiator and Ebecryl 350 (Manufactured by DAICEL-ALLNEX LTD.) (0.5 part by mass) was added to obtain a pressure-sensitive adhesive composition.
The pressure-sensitive adhesive composition thus obtained was coated on a release liner so that the pressure-sensitive adhesive layer had a thickness of 130 占 퐉, adhered to an LDPE (low density polyethylene) film having a thickness of 100 占 퐉 and a conventional surface protection tape for bumps having a thickness of 230 占 퐉 was obtained. In the following use, the release liner is peeled and used.
(II) Manufacturing of semiconductor chips
The surface protective tape for bumps was peeled off from the surface of a 12-inch wafer with a solder-bump portion having a height of 80 탆 and a pitch of 160 탆. The release liner was peeled off and bonded on the pressure-sensitive adhesive layer side. Using DGP8761 (trade name, , And the back surface of the wafer was ground. This backside grinding was performed up to a wafer thickness of 75 mu m after grinding.
Thereafter, the surface protection tape portion for bumps was mounted on a dicing tape made of polyolefin having a thickness of 110 mu m, and the surface protection tape for bumps was peeled off after ultraviolet irradiation.
Dicing was carried out using DFD6361 (trade name, a blade dicing device made by Disco Co., Ltd.), and DB800-HL (trade name, pick-up die bonder manufactured by Hitachi High-Technologies Corporation) I made a pickup.
U8443 (trade name, an underfill for a flip chip made by NAMICS CORPORATION) was applied as an adhesive (NCP) to a substrate, and chips picked up thereon And bonded to the substrate together with sealing.
[Comparative Example 2]
The surface protective tape for bump grinding, which was the same as that prepared in Comparative Example 1, was peeled off from the surface of a 12-inch wafer having a solder-bump portion having a height of 80 탆 and a pitch of 160 탆. The release liner was peeled off and bonded on the side of the pressure-sensitive adhesive layer. DGP8761 (trade name, Backside grinding apparatus), the back surface of the wafer was ground. This backside grinding was performed up to a thickness of 75 mu m after grinding.
Thereafter, the surface protection tape portion for bumps was mounted on a dicing tape made of polyolefin having a thickness of 110 mu m, and the surface protection tape for bumps was peeled off after ultraviolet irradiation.
Dicing was carried out using DFL7160 (trade name, laser dicing apparatus, manufactured by Disco Co., Ltd.), and pickup was performed using DB800-HL (trade name, pickup die bonder manufactured by Hitachi High-Technologies Corporation).
The picked-up chip was joined to the substrate, and U8443 (trade name, under-fill for flip chip made by Namix Co., Ltd.) was poured from the side as an under-fill material and sealed.
The following characteristics of the semiconductor chips obtained in the above-described Examples and Comparative Examples were evaluated.
(1) presence or absence of chip breakage
Whether breakage of the chip occurred at the time of exposing was visually observed and evaluated according to the following criteria.
○ (Good): No chip breakage is seen.
△ (poor): Some chips are broken.
× (particularly poor): significant chip breakage is seen.
(2) presence or absence of adhesive burr
Whether or not adhesion burrs occurred during the above-mentioned expressions and pickups was visually observed and evaluated according to the following criteria.
None (Good): Adhesion burr is not seen.
Yes (poor): Adhesion is visible.
The above results are shown in Table 1 together with the presence or absence of the underfill process.
As described above, in the semiconductor chip manufacturing methods of Embodiments 1 to 3, since the bump unevenness is completely embedded by the adhesive layer, cracks or the like occur when thin wafers having irregularities such as bumps are thin- It is possible to omit the dicing step after the back grinding and to omit the step of flowing the underfill by using the surface protective tape for thin film grinding, So that the yield is improved.
Further, since the damage to the semiconductor chip can be minimized by using the manufacturing method of the present invention, the anti-stiffness of the chip can be increased, and chip breakage hardly occurs, have.
Further, since the semiconductor chip is mounted with the adhesive film (adhesive layer) adhered thereto, it is possible to suppress the occurrence of cracking of the chip, and it is possible to shorten the manufacturing time since the semiconductor chip can be bonded with the adhesive at the same time of mounting.
Further, in the third embodiment, since the tape is picked up without being transferred, the peeling process of the adhesive tape can be omitted, and the damage to the semiconductor chip can be further reduced because the tape is released from the stress caused in peeling.
On the other hand, in Comparative Examples 1 and 2, the adhesive was squeezed out from the chips and adhesive burrs were formed. Particularly, in the UF (underfill) method, the amount of protrusion was large.
In Comparative Examples 1 and 2, chipping occurred on the side of the chip due to the dicing by the blade and the laser, respectively. In particular, on the blade dicing side, chip defects and chip cracks occurred.
In Examples 1 to 3, the gel fraction of the pressure-sensitive adhesive layer was 80% or more.
On the other hand, as another comparative example, when the gel fraction of the pressure-sensitive adhesive layer is less than 80%, the cohesive force is lowered in this comparative example, so that the paste remains on the circuit surface of the wafer surface, resulting in poor results.
In Examples 1 to 3, the elasticity of the adhesive film at 250 占 폚 was 10 MPa or less and the saturated moisture absorption rate was 1.5% by volume or less.
On the other hand, as another comparative example, in the case where the adhesive film has an elastic modulus at 250 ° C of more than 10 MPa and / or a saturated moisture absorption rate of more than 1.5% by volume, these comparative examples have a large warpage, , Or problems such as poor appearance and lack of adhesion occur, resulting in poor results.
In Examples 1 to 3, the surface free energy of the adhesive film was 25 to 45 mN / m.
On the other hand, as another comparative example, when the surface free energy of the adhesive film is less than 25 mN / m or more than 45 mN / m, voids are generated due to insufficient wettability in these Comparative Examples, , All result in poor results.
While the invention has been described in conjunction with the embodiments thereof, it is to be understood that the invention is not to be limited by any of the details of the description, unless specifically stated otherwise, but without departing from the spirit and scope of the invention as set forth in the appended claims. I think it is natural that it is widely interpreted.
The present application claims priority based on Japanese Patent Application No. 2012-254703, filed on November 20, 2012 in Japan, which is hereby incorporated by reference as its description.
1: wafer
1A: Wafer surface
1B: Wafer side
2: modified layer
2A:
3: Adhesive tape
4: base film
5: Pressure-sensitive adhesive layer
6: Adhesive layer (adhesive film)
6A: Partitioned adhesive layer (adhesive film)
9: back side grinding wafer
10: The back side of the wafer
10A: Partitioned wafer
11: Pickup tape
11A: Expanded pickup tape
12: ring frame
17: Dispersed adhesive additive chip
21: Fixing tape
21A: Expanded fixing tape
22: ring frame
27: Dispersed adhesive additive chip
Claims (13)
A surface protective tape for thin-film grinding in which an adhesive film is laminated on a pressure-sensitive adhesive layer of an adhesive tape having a pressure-sensitive adhesive layer on a base film after the formation of the modified layer and before grinding the back surface of the semiconductor wafer, A step of sticking (sticking) the adhesive film side to the side where the semiconductor circuit is formed,
A step of making only the adhesive film adhere to the chip when the semiconductor wafer is picked up after the back grinding of the semiconductor wafer or transferred to the pickup tape.
Wherein the step of attaching only the adhesive film to the chip is a step of picking up directly from the surface protective tape without using a transfer film.
And simultaneously dividing the adhesive film and the chip by expanding the surface protective tape for thin film grinding at the same time.
Wherein the adhesive film of the surface protective tape for thin film grinding is divided by laser only after the chip is divided by the back grinding of the semiconductor wafer.
Wherein the adhesive film has a modulus of elasticity at 250 占 폚 of 10 MPa or less and a saturated moisture absorptivity of 1.5% by volume or less and at least one selected from the group consisting of a (meth) acrylic copolymer and a phenoxy resin is used as an adhesive Wherein the surface protective tape comprises a single layer or a plurality of layers.
Wherein the pressure-sensitive adhesive layer is of an ultraviolet curing type.
Wherein the pressure-sensitive adhesive layer comprises a (meth) acrylic copolymer as a main component and a gel fraction of 80% or more.
Wherein the adhesive film has a surface free energy of 25 to 45 mN / m and a saturated moisture absorptivity of 1.5% by volume or less.
Wherein the adhesive film comprises an epoxy resin and the epoxy resin is at least one resin selected from the group consisting of a glycidyl ether epoxy resin, a glycidyl amine epoxy resin, a glycidyl ester epoxy resin and an alicyclic epoxy resin And the surface protective tape for thin-film grinding.
Wherein the adhesive film contains a bisphenol-based resin.
Wherein the bisphenol-based resin is at least one selected from the group consisting of bisphenol F diglycidyl ether resin and bisphenol A diglycidyl ether resin.
Wherein the adhesive film comprises an inorganic filler and the content thereof is less than 60 parts by mass based on 100 parts by mass of the resin component in the adhesive film.
Wherein the adhesive film comprises a compound having a functional group capable of crosslinking with an isocyanate curing agent or an epoxy curing agent and exhibiting flux activity.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-254703 | 2012-11-20 | ||
| JP2012254703 | 2012-11-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20150087222A true KR20150087222A (en) | 2015-07-29 |
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ID=50776098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157012438A KR20150087222A (en) | 2012-11-20 | 2013-11-19 | Method for manufacturing semiconductor chips and surface protective tape for thin-film grinding used in same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2014080918A1 (en) |
| KR (1) | KR20150087222A (en) |
| CN (1) | CN104781912A (en) |
| TW (1) | TW201430930A (en) |
| WO (1) | WO2014080918A1 (en) |
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2013
- 2013-11-19 WO PCT/JP2013/081205 patent/WO2014080918A1/en active Application Filing
- 2013-11-19 KR KR1020157012438A patent/KR20150087222A/en not_active Application Discontinuation
- 2013-11-19 JP JP2014505420A patent/JPWO2014080918A1/en active Pending
- 2013-11-19 CN CN201380058726.4A patent/CN104781912A/en active Pending
- 2013-11-20 TW TW102142233A patent/TW201430930A/en unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016210629A1 (en) | 2015-06-19 | 2016-12-22 | Hyundai Mobis Co., Ltd. | A method of making a hot melt adhesive composition and hot melt adhesive composition prepared thereby |
| KR101676025B1 (en) | 2016-06-30 | 2016-11-15 | (주) 화인테크놀리지 | Ultraviolet-curable adhesive sheet for grinding of back side after half-cut of a semiconductor wafer formed of circuit and Bumps |
| KR20190034653A (en) * | 2016-08-29 | 2019-04-02 | 후루카와 덴키 고교 가부시키가이샤 | Mask-integrated surface protection tape |
| WO2019182271A1 (en) * | 2018-03-23 | 2019-09-26 | 주식회사 엘지화학 | Back-grinding tape |
| US11466178B2 (en) | 2018-03-23 | 2022-10-11 | Lg Chem, Ltd. | Back-grinding tape |
| KR20210053872A (en) * | 2018-09-12 | 2021-05-12 | 린텍 가부시키가이샤 | Work processing sheet and manufacturing method of processed work |
| KR20200104384A (en) * | 2019-01-25 | 2020-09-03 | 후루카와 덴키 고교 가부시키가이샤 | Method for manufacturing UV-curable adhesive tape for semiconductor wafer processing and semiconductor chip, and method for using the tape |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201430930A (en) | 2014-08-01 |
| JPWO2014080918A1 (en) | 2017-01-05 |
| CN104781912A (en) | 2015-07-15 |
| WO2014080918A1 (en) | 2014-05-30 |
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| WITN | Withdrawal due to no request for examination |