KR20150028001A - Chemical vapor deposition apparatus - Google Patents

Chemical vapor deposition apparatus Download PDF

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Publication number
KR20150028001A
KR20150028001A KR20130106532A KR20130106532A KR20150028001A KR 20150028001 A KR20150028001 A KR 20150028001A KR 20130106532 A KR20130106532 A KR 20130106532A KR 20130106532 A KR20130106532 A KR 20130106532A KR 20150028001 A KR20150028001 A KR 20150028001A
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KR
South Korea
Prior art keywords
substrate
gas
vacuum chamber
gas inlet
unit
Prior art date
Application number
KR20130106532A
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Korean (ko)
Inventor
최창식
Original Assignee
주식회사 선익시스템
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Priority to KR20130106532A priority Critical patent/KR20150028001A/en
Publication of KR20150028001A publication Critical patent/KR20150028001A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A vacuum chamber; A gas heating unit installed along the inner wall of the vacuum chamber to heat the source gas; A gas inlet tube provided adjacent to the gas heating section in the vacuum chamber; And a substrate on which the source gas discharged from the gas inlet tube is deposited. The chemical vapor deposition apparatus can uniformly and continuously transfer heat to the source gas in the vacuum chamber to perform uniform thin film deposition.

Description

[0001] Chemical vapor deposition apparatus [0002]

The present invention relates to a chemical vapor deposition apparatus. More particularly, the present invention relates to a chemical vapor deposition apparatus capable of uniformly depositing a thin film by preventing the solidification of a source gas by transferring uniform and continuous heat to a source gas in a vacuum chamber.

A flat panel display (FPD) such as a liquid crystal display (LCD), a plasma display panel (PDP) and an organic light emitting diode (OLED) is manufactured through various processes. And a thin film deposition process for forming a thin film.

The thin film deposition process may be performed by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Among them, the chemical vapor deposition apparatus is a device for sending a reaction gas having a high vapor pressure to a substrate heated in a vacuum chamber, and depositing a film of the reaction gas on a substrate.

Physical vapor deposition (PVD) is generally superior to CVD (Chemical Vapor Deposition) in terms of composition, thickness uniformity and step coverage, so it is generally used in CVD (Chemical Vapor Deposition) ) Is commonly used. APCVD (Atmospheric Pressure CVD), LPCVD (Low Pressure CVD), and PECVD (Plasma Enhanced CVD) are available for CVD (Chemical Vapor Deposition).

Since uniform thin film deposition is the most important factor in the thin film deposition process, regardless of the method adopted, a number of improvement measures have been proposed, and uniform distribution of the reactive gas is very important for uniform thin film deposition .

Until the raw material gas is deposited on the substrate, it is maintained in a heated gaseous state and sprayed toward the substrate to form uniform thin film deposition. However, according to the conventional method, a uniform heat transfer to the raw material gas is not performed, so that the raw material gas is liquefied or solidified, resulting in unevenness of the thin film deposition and deteriorating the quality.

Korean Patent Publication No. 10-2001-0095991 (published on November 11, 2001)

The present invention provides a chemical vapor deposition apparatus capable of uniformly depositing a thin film by preventing the solidification of a source gas by transferring uniform and continuous heat to a source gas in a vacuum chamber.

According to an aspect of the present invention, there is provided a vacuum chamber comprising: a vacuum chamber; A gas heating unit installed along the inner wall of the vacuum chamber to heat the source gas; A gas inlet tube provided adjacent to the gas heating section in the vacuum chamber; And a substrate on which the raw material gas discharged from the gas inlet tube is deposited.

And a vaporizer for vaporizing the liquid raw material at one end of the gas inlet tube.

The substrate stage unit may further include a substrate stage unit disposed at a lower portion of the substrate and supporting the substrate.

Wherein the substrate stage unit comprises: a cooling unit positioned at a lower end of the substrate stage unit to perform cooling; A substrate heating unit for heating the substrate between the substrate and the cooling unit; And a rotation axis for rotating the substrate.

The gas inflow pipe may be composed of a plurality of different kinds of raw material gases.

The plurality of gas inlet pipes can discharge the raw material gas with a time difference from each other.

In addition, the plurality of gas inlet pipes may have different lengths at the end portions, or may have different heights at the end portions.

The substrate stage unit can move up and down with a gap from the vacuum chamber.

And a diffusion unit for diffusing the source gas discharged into the vacuum chamber.

A heat insulating material may be provided between the gas heating unit and the gas inlet pipe.

A pumping line for bringing the vacuum chamber into a vacuum state may be provided at a portion where the vacuum chamber and the substrate stage unit are in contact with each other.

According to the embodiment of the present invention, in the vacuum chamber, the gas heating unit can uniformly and continuously heat the material gas to prevent coagulation of the source gas, thereby achieving uniform thin film deposition.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view for explaining a configuration of a chemical vapor deposition apparatus according to an embodiment of the present invention; FIG.
2 is a view for explaining the operation of the substrate stage unit according to an embodiment of the present invention;

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

FIG. 1 is a view for explaining a configuration of a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a view for explaining an operation of a substrate stage unit according to an embodiment of the present invention.

1 to 2 show a vacuum chamber 10, a source gas 12, a gas heating unit 14, a gas inlet pipe 16, a liquid fuel 18, a substrate 20, a diffusion unit 22, The heat insulating material 24, the pumping line 26, the vaporizer 30, the substrate stage unit 40, the cooling section 42, the substrate heating section 44, and the rotary shaft 46 are shown.

Referring to FIG. 1, the chemical vapor deposition apparatus according to the present embodiment includes a vacuum chamber 10; A gas heating unit 14 installed along the inner wall of the vacuum chamber 10 to heat the source gas 12; A gas inlet pipe (16) provided adjacent to the gas heating unit (14) in the vacuum chamber (10); And a substrate 20 on which the source gas 12 discharged from the gas inlet pipe 16 is deposited so that uniform and continuous heat is transferred to the source gas 12 in the vacuum chamber 10, Deposition can be performed.

A vacuum atmosphere is maintained for deposition of the source gas 12 in the interior of the vacuum chamber 10 and the source gas 12 discharged from the gas inlet pipe 16 installed in the vacuum chamber 10 is supplied to the substrate 20, / RTI > The vacuum chamber 10 can be manufactured variously according to the size of the substrate 20 and the amount of the raw material gas 12 required.

The gas heating unit 14 is installed along the inner wall of the vacuum chamber 10 to heat the source gas 12. The gas heating unit 14 is widely distributed on the inner wall of the vacuum chamber 10 to continuously transfer heat energy to the raw material gas 12 because the raw material gas 12 must not be solidified or liquefied in order to be deposited on the substrate 20. [ Thereby preventing the raw material gas 12 from solidifying. The gas heating unit 14 is provided entirely along the gas inlet pipe 16 to be described later on the inner wall of the vacuum chamber 10 so that the heat transfer to the source gas 12 in the gas inlet pipe 16 is effectively performed.

The gas inflow pipe 16 is installed adjacent to the gas heating unit 14 in the vacuum chamber 10. The raw material gas 12 flows into the gas inlet pipe 16 from the inside and the outside of the vacuum chamber 10 and is deposited on the substrate 20 provided inside the vacuum chamber 10. In this process, since the heat transfer is continued by the gas heating unit 14 provided on the inner wall of the vacuum chamber 10, the raw material gas 12 in the gas inlet pipe 16 continues to be vaporized, And then flows into the vacuum chamber 10 until the substrate 20 is deposited.

The source gas 12 discharged from the gas inlet pipe 16 is deposited on the substrate 20. The source gas 12 can be stably deposited on the substrate 20 because the vacuum chamber 10 is maintained in a vacuum state. The substrate 20 is located at a position where the source gas 12 is discharged from the open end of the gas inlet pipe 16 inside the vacuum chamber 10 and the deposition of the source gas 12 can easily occur, A source gas (12) is deposited over the substrate (20).

A pumping line 26 for bringing the vacuum chamber 10 into a vacuum state may be provided at a portion where the vacuum chamber 10 and the substrate stage unit 40 are in contact with each other. As described above, the inside of the vacuum chamber 10 is required to be maintained in a vacuum state for deposition of the source gas 12, and the vacuum state is stopped due to the vertical movement of the substrate stage unit 40 or other various situations A pumping line 26 is provided at a portion where the vacuum chamber 10 and the substrate stage unit 40 are in contact with each other. This allows the vacuum chamber 10 to maintain a vacuum during the process.

The chemical vapor deposition apparatus according to the present embodiment may include a vaporizer 30 for vaporizing the liquid raw material 18 at one end of the gas inlet pipe 16. [ In order for vapor deposition to be performed on the substrate 20, the liquid component must be processed into a heated gas state, so that gas can be generated through the vaporizer 30 at one end of the gas inlet pipe 16. The liquid raw material 18 is vaporized and supplied to the inside of the vacuum chamber 10 to carry out the process.

A substrate stage unit 40 for supporting the substrate 20 may be installed under the substrate 20. The substrate stage unit 40 serves to support the substrate 20 at the bottom of the substrate 20 so that the source gas 12 can be easily deposited on the substrate 20. [

The substrate stage unit 40 includes a cooling section 42 positioned at the lower end of the substrate stage unit 40 to cool the substrate 20 and a heating section 40 for heating the substrate 20 between the substrate 20 and the cooling section 42 A substrate heating unit 44 for rotating the substrate 20, and a rotating shaft 46 for rotating the substrate 20.

The cooling section 42 cools the heated substrate 20 when the deposition process of the source gas 12 is completed, so that the substrate 20 can be easily separated. The cooling section 42 can control the temperature of the substrate 20 by a fluid interaction with the substrate 20 and the substrate heating section 44 to be described later.

The substrate heating section 44 heats the substrate 20 between the substrate 20 and the cooling section 42. A high temperature is required for the source gas 12 to be deposited on the substrate 20 and the source gas 12 must be prevented from solidifying or liquefying during the deposition process, The substrate 20 is heated at the opposite side of the deposition surface of the substrate 20.

The rotating shaft 46 can rotate the substrate stage unit 40 including the substrate 20. [ By rotating the substrate 20, the uniformity of the deposition of the source gas 12 on the substrate 20 is improved.

The gas inlet pipe 16 may be composed of a plurality of different kinds of raw material gases 12 introduced therein. The raw material gas 12 may be deposited in various types according to the model of the substrate 20 and the purpose of production. By feeding the raw material gas 12 into the plurality of gas inlet pipes 16 by type, The vapor deposition apparatus can be operated. For example, various host and dopant materials may be delivered into the vacuum chamber 10 through separate gas inlet pipes 16 and deposited on the substrate 20, respectively.

The plurality of gas inlet pipes 16 can discharge the raw material gas 12 with a time lag from each other. As described above, it is required to deposit different kinds of source gases 12 on the substrate 20 at various ratios according to model and production purpose, and it is directly controlled through the gas inlet pipe 16. In addition to the above control, various situations in which different kinds of source gases 12 deposited on the substrate 20 are deposited on the substrate 20 by varying the lengths of the ends of the gas inlet pipe 16 or having different heights, Can be controlled. Referring to FIG. 1, the length of the ends of the two gas inlet pipes 16 toward the substrate 20 is different, and an appropriate gas inlet pipe 16 is designated according to the ratio of the source gas 12 for the purpose of production, . Furthermore, different kinds of source gases 12 may be supplied over time or simultaneously.

The substrate stage unit 40 can move up and down with a gap from the vacuum chamber 10. The substrate stage unit 40 moves to the lower end at a distance from the vacuum chamber 10 when the process of depositing the source gas 12 to the substrate 20 is completed or the substrate 20 is to be replaced, It is possible to proceed easily. Further, even when the amount of the raw material gas 12 needs to be variously adjusted in the vacuum chamber 10, it can be solved through the movement of the substrate stage unit 40.

In the vacuum chamber 10, a diffusion portion 22 for diffusing the source gas 12 may be provided. The gas for spraying the raw material gas 12 is injected for uniform deposition of the raw material gas 12 to the substrate 20 when the raw material gas 12 is directly injected into the substrate 20 through the gas inlet pipe 16. [ The diffusion portion 22 diffuses the raw material gas 12 between the end portion of the inflow pipe 16 and the substrate 20. It goes without saying that the diffusing portion 22 can be attached and detached according to the design conditions and adjusted.

A heat insulating material 24 may be provided between the gas heating part 14 and the gas inflow pipe 16. When the heat is not uniform, when the raw material gas 12 in the gas inlet pipe 16 receives heat from the gas heating unit 14 to prevent solidification, the raw material gas 12 (depending on the position of the gas inlet pipe 16) The heat insulating material 24 is provided to ensure the uniformity of the temperature. Therefore, the heat insulating material 24 is installed side by side between the gas heating part 14 and the gas inflow pipe 16 to solve this problem.

Hereinafter, a deposition process of the chemical vapor deposition apparatus according to an embodiment of the present invention will be described in detail. 1, a liquid raw material 18 is introduced into the vacuum chamber 10 in the form of a raw material gas 12 while passing through a vaporizer 30, and the introduced raw material gas 12 is introduced into a gas heating unit 14). ≪ / RTI > At this time, the heat insulating material 24 between the gas heating part 14 and the gas inflow pipe 16 secures the uniformity of the temperature. The raw material gas 12 which is moving in the vacuum chamber 10 is injected into the substrate 20 at the end of the gas inlet pipe 16 and the injected raw material gas 12 diffuses through the diffusion part 22 . The source gas 12 is uniformly deposited on the substrate 20 through diffusion and the substrate 20 is continuously subjected to heat transfer through the operation of the substrate heating unit 44. [ In addition, uniformity of deposition on the substrate 20 can be increased while the substrate stage unit 40 is rotated through the rotation axis 46 in the deposition process.

Fig. 2 shows that the substrate stage unit 40 is moved downwardly with the vacuum chamber 10 being spaced apart. As described above, when the process of depositing the source gas 12 on the substrate 20 is completed, or when the substrate 20 is to be replaced, the substrate stage unit 40 moves downward to replace the substrate 20 have. Since the pumping line 26 is provided at the portion where the vacuum chamber 10 and the substrate stage unit 40 are in contact with each other, the inside of the vacuum chamber 10 is maintained in a vacuum state. When the substrate 20 is completely replaced, the substrate stage unit 40 moves upward again to deposit the source gas 12 on the substrate 20.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It belongs to the scope of right.

10: vacuum chamber 12: source gas
14: gas heating unit 16: gas inlet pipe
18: Liquid raw material 20: Substrate
22: diffusion part 24: insulation
26: pumping line 30: vaporizer
40: substrate stage unit 42: cooling unit
44: substrate heating section 46:

Claims (12)

A vacuum chamber;
A gas heating unit installed along the inner wall of the vacuum chamber to heat the source gas;
A gas inlet tube provided adjacent to the gas heating section in the vacuum chamber; And
And a substrate on which the source gas discharged from the gas inlet tube is deposited.
The method according to claim 1,
Further comprising a vaporizing device for vaporizing the liquid raw material at one end of the gas inflow pipe.
The method according to claim 1,
And a substrate stage unit provided at a lower portion of the substrate to support the substrate.
The method of claim 3,
The substrate stage unit includes:
A cooling unit positioned at a lower end of the substrate stage unit and cooling the substrate stage unit;
A substrate heating unit for heating the substrate between the substrate and the cooling unit; And
And a rotation axis for rotating the substrate.
The method according to claim 1,
Wherein the gas inlet pipe is composed of a plurality of different kinds of source gases into which the gas is introduced.
6. The method of claim 5,
Wherein the plurality of gas inlet pipes comprise:
Wherein the raw material gas is discharged at a time difference from each other.
In the fifth aspect,
Wherein the plurality of gas inlet pipes comprise:
And the lengths of the end portions are different from each other.
In the fifth aspect,
Wherein the ends of the plurality of gas inlet pipes
Wherein the first and second substrates have different heights.
The method of claim 3,
Wherein the substrate stage unit is moved up and down with an interval from the vacuum chamber.
The method according to claim 1,
And a diffusion unit for diffusing the source gas discharged into the vacuum chamber.
The method according to claim 1,
And a heat insulating material is provided between the gas heating unit and the gas inlet pipe.
The method of claim 3,
Wherein a pumping line for bringing the vacuum chamber into a vacuum state is provided at a portion where the vacuum chamber and the substrate stage unit are in contact with each other.
KR20130106532A 2013-09-05 2013-09-05 Chemical vapor deposition apparatus KR20150028001A (en)

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KR20130106532A KR20150028001A (en) 2013-09-05 2013-09-05 Chemical vapor deposition apparatus

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Application Number Priority Date Filing Date Title
KR20130106532A KR20150028001A (en) 2013-09-05 2013-09-05 Chemical vapor deposition apparatus

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KR20150028001A true KR20150028001A (en) 2015-03-13

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