KR20150014700A - Vapor deposition apparatus and vapor deposition process using the same - Google Patents

Vapor deposition apparatus and vapor deposition process using the same Download PDF

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Publication number
KR20150014700A
KR20150014700A KR1020130090267A KR20130090267A KR20150014700A KR 20150014700 A KR20150014700 A KR 20150014700A KR 1020130090267 A KR1020130090267 A KR 1020130090267A KR 20130090267 A KR20130090267 A KR 20130090267A KR 20150014700 A KR20150014700 A KR 20150014700A
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KR
South Korea
Prior art keywords
evaporation
mixing
vapor deposition
concentration
deposition apparatus
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Application number
KR1020130090267A
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Korean (ko)
Inventor
유경태
Original Assignee
삼성디스플레이 주식회사
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Priority to KR1020130090267A priority Critical patent/KR20150014700A/en
Publication of KR20150014700A publication Critical patent/KR20150014700A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Abstract

A vapor deposition device includes multiple evaporation units, a mixing unit, multiple connection units, and multiple evaporation sensor units. The evaporation units accommodate one or more deposition materials thereinside and the deposition materials are evaporated from the evaporation units. The deposition materials evaporated from the evaporation units are mixed in the mixing unit. The connection units are connected to the evaporation units and the mixing units and transfer the evaporated deposition materials. The evaporation sensor units are arranged outside the connection units and measure the concentration of the deposition materials transferred from the evaporation units. According to the vapor deposition device and the vapor deposition method using the same, the concentration of the deposition materials transferred from the evaporation units can be individually controlled and the vapor of the deposition materials can be uniformly mixed. Accordingly, a uniform deposition layer can be formed on the overall area of a substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a vapor deposition apparatus and a vapor deposition method using the vapor deposition apparatus,

The present invention relates to a vapor deposition apparatus and a vapor deposition method using the vapor deposition apparatus. More particularly, the present invention relates to a vapor deposition apparatus capable of forming a uniform deposition layer over the entire surface of a substrate, and a vapor deposition method using the vapor deposition apparatus.

Generally, a thin film deposition process is a process of forming a thin film on a substrate. The thin film deposition process is divided into a physical vapor deposition (PVD) process and a chemical vapor deposition process (CVD) according to a deposition method.

The physical vapor deposition process is a technique for forming a vapor deposition layer such as a light emitting layer and an organic material layer on a substrate surface as an evaporation material. The vapor deposition material is accommodated in the evaporation portion and heated to the vaporization temperature. The vapor of the generated evaporation material flows out of the evaporation portion and is condensed on the substrate to be coated.

Generally, the evaporation portion for generating the vapor of the evaporation material is divided into a point source or a linear source according to the structure and the shape of the deposition layer formed on the substrate surface.

The point evaporation source forms a circular deposition layer on the substrate surface. In order to form a uniform deposition layer on a relatively wide surface of the substrate using the point evaporation source, the substrate is rotated to perform the deposition process. However, in order to improve the production efficiency of an organic electroluminescent device such as a liquid crystal display device, the substrate is becoming larger in size, and it is difficult to rotate the enlarged substrate.

In general, an evaporation material used for forming the evaporation layer on a substrate surface includes a deposition material such as an organic material or an inorganic material, and a dopant as an auxiliary material for changing the properties of the evaporation material. The deposition material and the dopant are accommodated in separate evaporation portions, respectively, and are respectively evaporated and then sprayed onto the substrate surface. In order to form a uniform deposition layer, the deposition material injected in a vapor form and the dopant must be injected into the substrate surface in a uniformly mixed state.

According to a vapor deposition apparatus generally used, there is a problem that vapor deposition of the deposition material and vapor of the dopant are injected and mixed, respectively, so that the vapor deposition layer on the substrate is unevenly formed.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a vapor deposition apparatus capable of forming a uniform deposition layer over the entire surface of a substrate.

Another object of the present invention is to provide a vapor deposition method using the vapor deposition apparatus.

According to an aspect of the present invention, a vapor deposition apparatus includes a plurality of evaporators, a mixing unit, a plurality of connection units, and a plurality of evaporation sensor units. The evaporators receive at least one evaporation material therein, and the evaporation material evaporates. The mixing portion mixes the evaporated material evaporated from the evaporating portions. And the connection portions are connected to the evaporation portions and the mixing portion to transport the evaporated evaporation material. The evaporation sensor portions are respectively disposed outside the connection portions, and measure the concentration of the evaporation material transported from the evaporation portions.

In one embodiment of the present invention, the apparatus may further include a mixing sensor unit disposed outside the mixing unit, the mixing sensor unit measuring the concentration of the mixed material.

In one embodiment of the present invention, a plurality of pressure-resistance adjusting units disposed on the outer surface of the mixing unit and moving along the outer surface of the mixing unit according to the concentration of the evaporation material measured from the evaporation sensor units and the mixing sensor unit And may further include moieties.

In one embodiment of the present invention, the concentration of the evaporation material measured from the evaporation sensor portions and the mixing sensor portion is provided, and each of the pressure-adjustment portions may be disposed on the outer surface of the mixing portion And a control unit for moving the display unit along the display unit.

In one embodiment of the present invention, the evaporators and the mixing unit may be connected by two or more connection units.

In one embodiment of the present invention, the mixing portion may include a discharge portion disposed at an upper portion of the mixing portion.

In one embodiment of the present invention, the discharge portion may include a plurality of gas holes.

In one embodiment of the present invention, the mixing portion may include an exhaust portion for discharging the remaining evaporation material to the outer surface of the mixing portion.

According to an embodiment of the present invention, the connection portions may further include a plurality of shutoff valve portions that block the evaporator portions and the mixing portion.

In an embodiment of the present invention, the heater may further include a heater disposed at an outer periphery of the evaporator.

In an embodiment of the present invention, the heater may be arranged to surround the outer surface of the evaporators.

According to another aspect of the present invention for achieving the object of the present invention, there is provided a vapor deposition method including heating and vaporizing a plurality of evaporation materials accommodated in a plurality of evaporation units, transporting evaporated evaporation materials to a mixing unit through a plurality of connection units Measuring the concentration of each of the deposition materials, mixing the deposition materials to deposit the mixed material on the substrate, measuring the concentration of the mixed material, and measuring the concentration of the deposited materials And adjusting the opening between the connecting portions and the mixing portion according to the concentration and the concentration of the mixed material measured.

In one embodiment of the present invention, the step of adjusting the opening may further include providing the control unit with the concentration of the measured evaporated material and the measured concentration of the mixed material.

According to an embodiment of the present invention, the step of adjusting the opening may include a step of adjusting a plurality of internal pressure adjusting parts disposed on the outer surface of the mixing part according to the measured concentration of the evaporation material and the measured concentration of the mixed material, And moving up and down along the outer surface of the mixing portion.

In one embodiment of the present invention, the step of depositing the mixed material on the substrate may include moving the substrate vertically or laterally.

According to the vapor deposition apparatus and the vapor deposition method using the vapor deposition apparatus, the evaporation materials transported from the plurality of evaporation units can be uniformly mixed at a desired concentration. Thus, a uniform deposition layer can be formed over the entire surface of the substrate.

1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention.
2 is a perspective view of a part of the vapor deposition apparatus of FIG.
3 is a partially enlarged view of the vapor deposition apparatus of FIG.
4 is a perspective view of a part of a vapor deposition apparatus according to another embodiment of the present invention.

Hereinafter, a vapor deposition apparatus according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings, and a vapor deposition method using the vapor deposition apparatus will be described.

1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention. 2 is a perspective view of a part of the vapor deposition apparatus of FIG. 3 is a partially enlarged view of the vapor deposition apparatus of FIG.

1 to 3, the vapor deposition apparatus includes a plurality of evaporators 100, 200, a mixing unit 300, connection units 410, 420, and a plurality of evaporation sensor units 150, 250 do.

A vapor deposition apparatus according to an exemplary embodiment of the present invention includes the plurality of evaporators 100, 200. The plurality of evaporator units may include a first evaporator unit 100 and a second evaporator unit 200.

The first evaporator 100 and the second evaporator 200 accommodate the evaporation materials 101 and 201, respectively. The evaporation materials (101, 201) are evaporated in the first evaporator (100) and the second evaporator (200).

In the mixing part 300, the vaporized material evaporated from the evaporators 100 and 200 is mixed in a vapor state.

The mixing unit 300 may include a discharge unit 310 disposed at an upper portion of the mixing unit 300. The deposition material in a vapor state can be discharged through the discharge portion 310.

The discharge unit 310 may include a plurality of gas holes 311. The discharge unit 310 may be a shower head having a plurality of gas holes 101 for supplying gas. The gas holes 101 of the discharge unit 310 may be formed so as to extend from a central portion of the shower head to an outer periphery thereof. The gas holes 311 may be formed in various shapes such as a triangle, a square, and a circle.

Alternatively, the discharge portion 310 may include a nozzle for discharging the evaporation material.

The mixing unit 300 may include an exhaust unit 320 disposed on an outer surface of the mixing unit 300. The exhaust part 320 forms an evaporation layer on the substrate 10 disposed on the mixing part 300, and then discharges the remaining evaporation material.

Although not shown, the mixing part 300 may be disposed inside the vacuum chamber.

The mixing unit 300 may include a dopant as an auxiliary material for changing the properties of the evaporation materials accommodated in the evaporation units 100 and 200. In addition, a heater (not shown) disposed at the outer periphery of the mixing unit 300 may be included. The heater (not shown) may be arranged to surround the outer surface of the mixing unit (not shown).

The vapor deposition apparatus according to the exemplary embodiment of the present invention includes the plurality of connection portions 410 and 420. The plurality of connection portions may include a first connection portion 410 and a second connection portion 420.

The first connection part 410 and the second connection part 420 connect the first evaporation part 100 and the second evaporation part 200 to the mixing part 300, respectively. That is, the first connection part 410 connects the first evaporator part 100 and the mixing part 300, and the second connection part 420 connects the second evaporator part 200 and the mixing part 300 300).

Alternatively, the first evaporator 100, the mixing unit, the second evaporator 200, and the mixing unit 300 may be connected to each other by two or more connection units (not shown). One vaporizing portion is connected to the mixing portion 300 by two or more connection portions (not shown), so that the vapor deposition materials can be mixed in a short time.

The evaporation material evaporated in the first evaporation unit 100 and the second evaporation unit 200 through the first connection unit 410 and the second connection unit 420 is supplied to the mixing unit 300, Lt; / RTI >

The plurality of connection portions 410 and 420 may further include a plurality of isolation valve portions 411 and 421. The shutoff valve units 411 and 421 may block the evaporator units 100 and 200 and the mixing unit 300.

The vapor deposition apparatus according to the exemplary embodiment of the present invention includes the plurality of evaporation sensor units 450 and 460. The plurality of evaporation sensor units may include a first evaporation sensor unit 450 and a second evaporation sensor unit 460.

The first evaporation sensor part 450 and the second evaporation sensor part 460 are disposed outside the first connection part 410 and the second connection part 420, respectively. The first evaporation sensor unit 450 and the second evaporation sensor unit 460 measure the concentration of the evaporation material transported from the first evaporation unit 100 and the second evaporation unit 200 .

According to an exemplary embodiment of the present invention, the vapor deposition apparatus may further include a mixing sensor unit 350. The mixing sensor unit 350 is disposed outside the mixing unit 300. The mixing sensor unit 350 measures the concentration of the mixed deposition material.

The vapor deposition apparatus may further include a plurality of internal pressure control units 510 and 520. The plurality of pressure regulators may include a first pressure regulator 510 and a second pressure regulator 520.

The first internal pressure regulating part 510 and the second internal pressure regulating part 520 may be disposed outside the mixing part 300. The first internal pressure regulating part 510 and the second internal pressure regulating part 520 are connected to the first internal pressure regulating part 450 and the second internal pressure regulating part 520, And may move along the outer surface of the mixing portion depending on the concentration of the evaporation material.

The vapor deposition apparatus may further include a controller 600. The controller 600 is provided with the concentrations of the evaporation material measured from the first evaporation sensor unit 450, the second evaporation sensor unit 460 and the mixing sensor unit 350.

The first internal pressure regulating part 510 and the second internal pressure regulating part 520 are moved along the outer surface of the mixing part 300 through the control part 600 according to the concentration of the provided evaporation material . In other words, the concentrations of the evaporation material from the first evaporation sensor part 450, the second evaporation sensor part 460 and the mixing sensor part 350 are measured and provided to the control part 600, May control the first internal pressure regulator 510 and the second internal pressure regulator 520 according to the concentrations of the evaporation material.

The concentration of the evaporation material is set in advance in the controller 600. The first internal pressure regulating part 510 and the second internal pressure regulating part 520 can be moved by comparing the concentration of the evaporation material measured by the mixing sensor part 350 with the preset concentration of the evaporation material .

3, when the concentration of the first evaporation material in the concentration of the evaporation material measured by the mixing sensor unit 350 and provided to the controller 600 is higher than a predetermined concentration, the first pressure regulator 510 Can be moved by a predetermined height.

The first internal pressure regulating part 510 moves and forms an internal pressure between the evaporator parts 100 and 200 and the mixing part 300. Accordingly, It is possible to control the amount of the evaporation material.

For example, when the height of the inside of the first connection part 410 and the height of the hole of the mixing part 300 connected to the first connection part 410 are equal to the first height ha, The inner pressure of the first evaporator 100 increases when the inner pressure regulator moves upward by a predetermined height hb. In addition, the height hc of the space through which the evaporation material is transported between the mixing portion 300 and the first connection portion 410 is reduced, so that the amount of the evaporation material to be transported can be reduced.

The vapor deposition apparatus according to the exemplary embodiment of the present invention may further include heaters 710 and 720 disposed on the outer periphery of the evaporator units 100 and 200.

The heaters 710 and 720 may be disposed to surround the outer surfaces of the evaporators 100 and 200.

The evaporation materials 101 and 102 accommodated in the evaporators 100 and 200 can be heated through the heaters 710 and 720. The heaters may further include a temperature sensor (not shown) therein to control heating to the vaporization temperature of the evaporation materials.

4 is a perspective view of a part of a vapor deposition apparatus according to another embodiment of the present invention.

1 to 4, the vapor deposition apparatus includes a plurality of evaporators 100a, 100b, 200a, and 200b, a mixing unit 300, a plurality of connection units 410, 420, 430, and 440, And includes evaporation sensor units 450 and 460.

The vapor deposition apparatus according to FIG. 4 includes a plurality of evaporation units 100a, 100b, 200a, and 200b and a plurality of connection units 410, 420, 430, and 440, The configuration of the deposition apparatus is the same, and the overlapping contents are omitted or simplified.

The vapor deposition apparatus according to the exemplary embodiment of the present invention includes the plurality of evaporators 100a, 100b, 200a, and 200b. The plurality of evaporators may include a first evaporator 100a, a second evaporator 200a, a third evaporator 100b, and a fourth evaporator 200b.

The first evaporator 100a, the second evaporator 200a, the third evaporator 100b, and the fourth evaporator 200b each contain evaporation materials therein. The evaporation materials are evaporated in the first evaporator 100a, the second evaporator 200a, the third evaporator 100b, and the fourth evaporator 200b.

In the mixing part 300, the evaporation material evaporated from the evaporators 100a, 100b, 200a and 200b is mixed in a vapor state.

The vapor deposition apparatus according to the exemplary embodiment of the present invention includes the plurality of connection portions 410, 420, 430, and 440. The plurality of connection portions may include a first connection portion 410, a second connection portion 420, a third connection portion 430, and a fourth connection portion 440.

The first connection part 410, the second connection part 420, the third connection part 430 and the fourth connection part 440 are connected to the first evaporation part 100a, the second evaporation part 200a, The third evaporator 100b and the fourth evaporator 200b and the mixing unit 300 are connected to each other.

That is, the first connection part 410 connects the first evaporator 100a and the mixing part 300. [ The second connection portion 420 connects the second evaporator 200a and the mixing portion 300. [ The third connection part 430 connects the third evaporator part 100b and the mixing part 300. [ The fourth connection part 440 connects the fourth evaporator part 200b and the mixing part 300. [

The vaporizing units 100a, 100b, 200a, 200b and the mixing unit 300 may be connected to each other by two or more connecting units (not shown). One vaporizing portion is connected to the mixing portion 300 by two or more connection portions (not shown), so that the vapor deposition materials can be mixed in a short time.

The first evaporator 100a and the second evaporator 200a are connected to each other through the first connection part 410, the second connection part 420, the third connection part 430 and the fourth connection part 440, The vaporized material evaporated in the third evaporator 100b and the fourth evaporator 200b is transported to the mixing unit 300.

Although not shown, the vapor deposition apparatus according to the exemplary embodiment of the present invention includes the plurality of evaporation sensor units (not shown). The plurality of evaporation sensor units may include a first evaporation sensor unit (not shown), a second evaporation sensor unit (not shown), a third evaporation sensor unit (not shown), and a fourth evaporation sensor unit (not shown) . ≪ / RTI >

The first evaporation sensor unit (not shown), the second evaporation sensor unit (not shown), the third evaporation sensor unit (not shown) and the fourth evaporation sensor unit (not shown) ), The second connection unit 420, the third connection unit 430, and the fourth connection unit 440, respectively.

According to an exemplary embodiment of the present invention, the vapor deposition apparatus may further include a mixing sensor unit 350. The mixing sensor unit 350 is disposed outside the mixing unit 300. The mixing sensor unit 350 measures the concentration of the mixed deposition material.

The vapor deposition apparatus may further include a plurality of internal pressure control units 510, 520, 530, and 540. The plurality of internal pressure regulators may include a first internal pressure regulator 510, a second internal regulator 520, a third internal regulator 530, and a fourth internal regulator 540.

The first internal pressure regulating part 510, the second internal pressure regulating part 520, the third internal pressure regulating part 530 and the fourth internal pressure regulating part 540 are disposed outside the mixing part 300 .

The first internal pressure regulating part 510, the second internal pressure regulating part 520, the third internal pressure regulating part 530 and the fourth internal pressure regulating part 540 are connected to the first evaporation sensor part (not shown) The concentration of the evaporation material measured from the second evaporation sensor unit (not shown), the third evaporation sensor unit (not shown), the fourth evaporation sensor unit (not shown) and the mixing sensor unit 350 Thereby moving along the outer surface of the mixing portion.

The vapor deposition apparatus may further include a controller 600. The control unit 600 is provided with the concentrations of the evaporation material measured from the evaporation sensor units (not shown) and the mixing sensor unit 350.

The internal pressure adjusting portions 510, 520, 530, and 540 may be moved along the outer surface of the mixing portion 300 through the controller 600 according to the concentration of the provided evaporation material.

The vapor deposition apparatus according to the exemplary embodiment of the present invention may further include heaters (not shown) disposed on the outer sides of the evaporators 100a, 100b, 200a, and 200b, respectively.

The heaters (not shown) may be disposed to surround the outer surfaces of the evaporators 100a, 100b, 200a, and 200b.

1 to 3, a vapor deposition method according to an exemplary embodiment of the present invention will be described.

According to the vapor deposition method according to the exemplary embodiment of the present invention, a plurality of evaporation materials 101 and 201 accommodated in a plurality of evaporators 100 and 200 to be formed on the substrate 10 are heated and evaporated . For example, the plurality of evaporation materials 101 and 201 may be heated through heaters 710 and 720 disposed on the outer surfaces of the evaporation units 100 and 200.

The vaporized evaporation materials 101 and 201 are transported to the mixing part 300 through a plurality of connection parts 410 and 420. The deposition materials flow in a vapor state and move to the mixing part 300 through the connection parts 410 and 420.

The concentration of each of the evaporation materials 101 and 201 is measured through the plurality of evaporation sensor units 450 and 460. The sensor units 450 and 460 may include nozzles (not shown) connected from the connection units 410 and 420 to measure the concentration of each of the vaporized materials transported through the nozzles .

The deposition materials 101 and 201 are mixed to deposit the mixed material on the substrate. The concentration of the mixed material is measured through the mixing sensor unit 350 disposed outside the mixing unit 300. The step of depositing the mixed material on the substrate may be performed by moving the substrate 10 up or down or left and right.

The opening between the connection portions 410 and 420 and the mixing portion 300 is adjusted according to the concentration of the evaporation materials 101 and 201 measured and the concentration of the mixed material measured. The adjusting of the opening may include adjusting a plurality of inner pressure adjusting portions 510 and 520 disposed on the outer surface of the mixing portion 300 according to the measured concentration of the evaporation material and the measured concentration of the mixed material, And move up and down along the outer surface of the mixing portion 300.

According to the vapor deposition method according to the exemplary embodiment of the present invention, the concentration of the measured deposition material (101, 201) and the measured concentration of the mixed material are measured by the controller (600) before the step of adjusting the opening, As shown in FIG.

As described above, the vapor deposition apparatus according to the present invention may include a plurality of vaporizing units, a mixing unit, a plurality of connecting units, and a plurality of vaporizing sensor units. Therefore, the vapor of the evaporation materials transported from the plurality of evaporators can be uniformly mixed, and a uniform deposition layer can be formed over the entire area of the substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. You will understand.

The present invention can be applied to a vapor deposition apparatus for depositing an organic material, an inorganic material, or the like.

100, 100a, 100b, 200, 200a, 200b:
300: mixing portion 310: discharging portion
350: mixing sensor unit 410, 420, 430, 440:
450, 460: Evaporation sensor unit 510, 520, 530, 540: Internal pressure regulator
600: control unit 710, 720: heaters
10: substrate

Claims (15)

A plurality of evaporators for containing at least one evaporation material therein, the evaporation material being evaporated;
A mixing portion in which the evaporation material vaporized from the evaporation portions are mixed;
A plurality of connecting parts connected to the evaporating parts and the mixing part to transport the vaporized evaporated material; And
And a plurality of evaporation sensor portions disposed on the outside of the connection portions, respectively, for measuring the concentration of the evaporation material transported from the evaporation portions. 2. The vapor deposition apparatus according to claim 1, further comprising a mixing sensor section disposed outside the mixing section for measuring a concentration of the mixed deposition material. 3. The plasma display apparatus according to claim 2, further comprising a plurality of internal pressure adjusting parts disposed on an outer surface of the mixing part and moving along the outer surface of the mixing part according to the concentration of the evaporation material measured from the evaporation sensor parts and the mixing sensor part And the vapor deposition apparatus. 4. The apparatus according to claim 3, wherein a concentration of the evaporation material measured from the evaporation sensor parts and the mixing sensor part is provided, and each of the pressure-adjustment parts moves along the outer surface of the mixing part according to the concentration of the evaporation material provided The vapor deposition apparatus further comprising: The vapor deposition apparatus according to claim 1, wherein the vaporizing portions and the mixing portion are connected by two or more connecting portions. The vapor deposition apparatus according to claim 1, wherein the mixing section includes a discharge section disposed at an upper portion of the mixing section. 7. The vapor deposition apparatus according to claim 6, wherein the discharge section includes a plurality of gas holes. 2. The vapor deposition apparatus according to claim 1, wherein the mixing section includes an exhaust section for discharging the remaining evaporation material to the outer surface of the mixing section. The vapor deposition apparatus of claim 1, wherein the connection portions further comprise a plurality of shutoff valve portions for blocking the evaporation portions and the mixing portion. The vapor deposition apparatus according to claim 1, further comprising: a plurality of heaters disposed on the outer periphery of the evaporators. 11. The vapor deposition apparatus according to claim 10, wherein the heaters are arranged to surround the outer surfaces of the evaporators. Heating and evaporating a plurality of evaporation materials accommodated in the plurality of evaporators;
Transporting the evaporated evaporation materials to the mixing portion through a plurality of connection portions;
Measuring the concentration of each of the deposition materials;
Mixing the deposition materials to deposit a mixed material on the substrate;
Measuring the concentration of the mixed material; And
And adjusting an opening between the connecting portions and the mixing portion according to the concentration of the evaporated materials measured and the concentration of the mixed material measured. 13. The method of claim 12, further comprising providing the control portion with a concentration of the measured deposition material and a measured concentration of the mixed material before the step of adjusting the opening. The method according to claim 12, wherein the step of adjusting the opening comprises the step of adjusting a plurality of pressure-adjusting portions disposed on the outer surface of the mixing portion according to the measured concentration of the evaporation material and the measured concentration of the mixed material, Wherein the vapor deposition is carried out in a vertical direction along a surface of the substrate. 13. The vapor deposition method of claim 12, wherein depositing the mixed material on the substrate comprises moving the substrate vertically or laterally.
KR1020130090267A 2013-07-30 2013-07-30 Vapor deposition apparatus and vapor deposition process using the same KR20150014700A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110144550A (en) * 2019-06-18 2019-08-20 京东方科技集团股份有限公司 Evaporation source and evaporated device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110144550A (en) * 2019-06-18 2019-08-20 京东方科技集团股份有限公司 Evaporation source and evaporated device

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