KR20130120271A - Ink composition for use in manufacturing of solar cell and method for producing solar cell using the same - Google Patents
Ink composition for use in manufacturing of solar cell and method for producing solar cell using the same Download PDFInfo
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- KR20130120271A KR20130120271A KR1020120043391A KR20120043391A KR20130120271A KR 20130120271 A KR20130120271 A KR 20130120271A KR 1020120043391 A KR1020120043391 A KR 1020120043391A KR 20120043391 A KR20120043391 A KR 20120043391A KR 20130120271 A KR20130120271 A KR 20130120271A
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- ink composition
- solar cell
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- 239000000203 mixture Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- -1 melamine compound Chemical class 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 18
- 239000004094 surface-active agent Substances 0.000 claims abstract description 18
- 229920000877 Melamine resin Polymers 0.000 claims abstract description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 13
- 239000011737 fluorine Substances 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 41
- 239000007787 solid Substances 0.000 claims description 10
- 229920003986 novolac Polymers 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 125000001424 substituent group Chemical group 0.000 claims description 5
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 4
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000002318 adhesion promoter Substances 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 claims description 2
- HYLLZXPMJRMUHH-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]butane Chemical group CCCCOCCOCCOC HYLLZXPMJRMUHH-UHFFFAOYSA-N 0.000 claims description 2
- IDQBJILTOGBZCR-UHFFFAOYSA-N 1-butoxypropan-1-ol Chemical compound CCCCOC(O)CC IDQBJILTOGBZCR-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 claims description 2
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 claims description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 2
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- 125000001033 ether group Chemical group 0.000 claims description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 2
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 125000005372 silanol group Chemical group 0.000 claims description 2
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- 239000000976 ink Substances 0.000 description 81
- 230000008569 process Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 10
- 230000007261 regionalization Effects 0.000 description 10
- 239000002253 acid Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 6
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- OGRAOKJKVGDSFR-UHFFFAOYSA-N 2,3,5-trimethylphenol Chemical compound CC1=CC(C)=C(C)C(O)=C1 OGRAOKJKVGDSFR-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- MXZROAOUCUVNHX-UHFFFAOYSA-N 2-Aminopropanol Chemical compound CCC(N)O MXZROAOUCUVNHX-UHFFFAOYSA-N 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 1
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 description 1
- KFVIYKFKUYBKTP-UHFFFAOYSA-N 2-n-(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCNC1=NC(N)=NC(N)=N1 KFVIYKFKUYBKTP-UHFFFAOYSA-N 0.000 description 1
- XOUQAVYLRNOXDO-UHFFFAOYSA-N 2-tert-butyl-5-methylphenol Chemical compound CC1=CC=C(C(C)(C)C)C(O)=C1 XOUQAVYLRNOXDO-UHFFFAOYSA-N 0.000 description 1
- QQOMQLYQAXGHSU-UHFFFAOYSA-N 236TMPh Natural products CC1=CC=C(C)C(O)=C1C QQOMQLYQAXGHSU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- ISAVYTVYFVQUDY-UHFFFAOYSA-N 4-tert-Octylphenol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(O)C=C1 ISAVYTVYFVQUDY-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229950011260 betanaphthol Drugs 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/38—Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
Abstract
The present invention provides a pattern on a silicon substrate having surface irregularities, a) 15 parts by weight to 35 parts by weight of alkali-soluble resin, b) 5 parts by weight to 30 parts by weight of the melamine compound, c) 0.01 parts by weight to 1.00 fluorine-based surfactant It relates to a solar cell ink composition and a method for producing a solar cell using the same, characterized in that it comprises a weight part and d) 50 parts by weight to 70 parts by weight of an organic solvent.
Description
The present invention relates to a solar cell ink composition capable of forming a pattern on a silicon substrate having surface irregularities, an etching mask formed using the same, and a solar cell manufacturing method using the same.
Recently, as the prediction of depletion of existing energy sources such as oil and coal is increasing, interest in alternative energy to replace them is increasing. Among them, solar cells are particularly attracting attention because they are rich in energy resources and have no problems with environmental pollution.
Solar cells include solar cells that generate steam for rotating turbines using solar heat, and solar cells that convert photons into electrical energy using the properties of semiconductors. Refers to photovoltaic cells (hereinafter referred to as "solar cells").
Open voltage behavior, one of three factors that determine the conversion efficiency of solar cells, is closely related to the doping concentration of n-type impurities when the emitter layer is formed by diffusing n-type impurities on the surface of a p-type silicon semiconductor substrate.
In the past, the dopant was excessively doped in forming the emitter layer to increase the open voltage of the solar cell. In this case, the top layer of the emitter layer (hereinafter referred to as the 'dead layer') causes the concentration of the doped n-type impurity to increase beyond the solid solubility in the silicon semiconductor. The dead layer has a thickness of about 50 ~ 200nm. As a result, there is a problem that the mobility of the carrier is reduced near the emitter layer surface and the scattering effect with excessive impurities increases the recombination rate of the carrier and the lifetime of the carrier is also reduced.
In order to solve the above problems, the emitter layer is formed by a diffusion process of excessively doping impurities, and then a dead layer that adversely affects the performance of the solar cell by wet etching using a mixture of nitric acid and hydrofluoric acid or CF 4 plasma etching. An emitter etch-back process to remove has been proposed.
However, the mixture of nitric acid and hydrofluoric acid or CF 4 plasma has disadvantages in that the etching selectivity of the region doped with the n-type impurity is not excellent and the etching rate is high. Therefore, the conventional emitter etch-back process has a limitation of poor process reproducibility and stability in selectively removing only the surface of the emitter layer which is heavily doped with n-type impurities.
There is a selective emitter process as a prior art to overcome the disadvantages of such an emitter etch-back process. In the selective emitter process, after the emitter etch-back process, the front electrode is formed by forming a mask pattern exposing only the point where the front electrode is to be formed and further diffusing n-type impurities on the surface of the emitter layer exposed by the mask pattern. It is a process of forming an emitter layer doped with a high concentration of n-type impurities only at the point to be formed.
However, since the selective emitter process requires the addition of a pre-etching process and an additional impurity diffusion process for forming a mask pattern, the manufacturing process of the solar cell is complicated and the solar cell manufacturing cost increases.
Therefore, there is a need to form a non-contact inkjet printing method for forming an etch mask pattern for solar cell manufacturing in order to simplify the manufacturing process of the solar cell and reduce the manufacturing cost.
However, in the case of the inkjet method, the conventional ink composition has a problem in that fluidity is large and ink flows in a silicon substrate having surface irregularities such as a solar cell, thereby making it difficult to form a pattern. Therefore, there is an urgent need to develop an ink composition which can be patterned even on a silicon substrate having surface irregularities.
The present invention is to solve the above problems, to provide an ink composition capable of forming a pattern on a silicon substrate having surface irregularities.
In addition, by using the inkjet ink method in the selective emitter layer forming process, it is to increase the stability in the solar cell manufacturing method, to improve the productivity by simplifying the production process and cost reduction.
To this end, the present invention is a) 15 parts by weight to 35 parts by weight of alkali-soluble resin, b) 5 parts by weight to 30 parts by weight of the melamine compound, c) 0.01 parts by weight to 1.0 parts by weight of fluorine-based surfactant and d) 50 parts by weight of organic solvent It provides a solar cell ink composition comprising from about 70 parts by weight.
In another aspect, the present invention includes forming an etching mask pattern using the ink composition, selectively etching an emitter layer using the etching mask pattern as a mask, and removing the etching mask pattern. It provides a battery manufacturing method.
Since the ink composition of the present invention can be formed on the silicon substrate having the surface irregularities and can be used in the solar cell manufacturing process, the ink composition can simplify the solar cell manufacturing process and provide high economical efficiency.
In addition, the solar cell manufacturing method of the present invention, by manufacturing the solar cell using the inkjet ink method, to provide a process reproducibility and high stability in the process of forming the selective emitter layer, and to significantly improve the productivity by simplifying the manufacturing process There are advantages to it.
1 is a photograph showing a pattern formation result using the ink composition according to each embodiment of the present invention on a silicon substrate having surface irregularities.
2 is a photograph showing a pattern formation result using an ink composition according to a comparative example of the present invention on a silicon substrate having surface irregularities.
3 is a photograph of a cross section measured by an electron scanning microscope after forming an etching mask pattern.
4 is a photograph after selectively etching the emitter layer during solar cell manufacturing.
FIG. 5 is a photograph after removing the etching mask pattern remaining by the stripper after selectively etching the emitter layer in manufacturing a solar cell.
6 shows a change in contact angle over time for the type of surfactant included in the ink composition.
The ink composition for a solar cell capable of forming a pattern on a silicon substrate having surface irregularities of the present invention is characterized by including a) an alkali-soluble resin, b) a melamine compound, c) a fluorine-based surfactant, and d) an organic solvent.
The a) alkali-soluble resin may be a phenol resin, an acrylic resin, hydroxycitrene, polyvinylphenol, or polyimide resin as a matrix resin forming an etching mask pattern.
In particular, in the ink composition of the present invention, the alkali-soluble resin may be a phenol resin, preferably a novolak resin.
Here, the novolak resin is to increase the viscosity of the ink composition to reduce the spreading of the ink on the silicon substrate having surface irregularities, and serves to increase the durability of the pattern formed by combining with the melamine compound by heat, phenols and aldehydes It can synthesize | combine by 1 type or 2 or more types in a condensation reaction.
In addition, the phenols are phenol, 4-t-butylphenol, 4-t-octylphenol, 2-ethylphenol, 3-ethylphenol, 4-ethylphenol, o-cresol, m-cresol, p-cresol, 2, 5-Xylenol, 3,4-Xylenol, 3,5-Xylenol, 2,3,5-trimethylphenol, 3-methyl-6-t-butylphenol, 2-naphthol, 1,3-dihydroxy It may be selected from the group consisting of naphthalene, bisphenol-A, the aldehydes may be selected from the group consisting of formaldehyde, paraformaldehyde, acetoaldehyde, benzaldehyde, phenylaldehyde.
Further, the condensation reaction is an organic acid consisting of oxalic acid, p-toluenesulfonic acid, trichloroacetic acid; Inorganic acids consisting of sulfuric acid, hydrochloric acid, phosphoric acid; At least one selected from metal salts consisting of zinc chloride, aluminum chloride, magnesium acetate, and zinc acetate can be used as a catalyst.
On the other hand, the weight average molecular weight of the novolak resin may be 500 to 7000, preferably 500 to 5000, more preferably 500 to 3000. When the weight average molecular weight satisfies the above numerical range, no deformation or dropping of the pattern occurs during the acid treatment, and the viscosity has a viscosity suitable for use as an ink jet ink composition.
In the ink composition according to the present invention, the a) alkali-soluble resin preferably has 15 to 35 parts by weight, preferably 20 to 30 parts by weight based on the total weight of the ink composition. When the content of the a) alkali-soluble resin satisfies the numerical range, it is easy to remove the pattern by the stripper, and the viscosity of the ink composition may be increased, thereby preventing the problem of difficulty of ejecting ink in an inkjet method. have.
Next, the b) melamine compound can be used without limitation to improve the durability of the film formed by crosslinking by reaction with an alkali-soluble resin and to lower the viscosity of the ink composition, but preferably It is represented by 1.
≪ Formula 1 >
Wherein, R 1, R 2, R 3, R 4, R 5 and R 6 are each independently hydrogen, an alkyl group of C 1 -6, C 1 -6 alkoxy group, a carboxyl group, C 1 -6 of the ether group , is a C 1 -6 alcohol group, an amino group, a nitro group, a hydroxyl group, a phenyl group or an acryl group.
In this case, R 1 , R 2 , R 3 , R 4 , R 5, and R 6 of Formula 1 may have a substituent other than at least one hydrogen, preferably R 1 , R 2 , of Formula 1 R 3 , R 4 , R 5 and R 6 may have a substituent other than at least two or more hydrogen, more preferably R 1 , R 2 , R 3 , R 4 , R 5 and R 6 of Formula 1 May have a substituent other than at least three hydrogen.
In particular, in the ink composition according to the present invention, the b) melamine compound may be used without limitation as long as it is commonly used in the art as commercialized, for example, it may be hexamethoxymethylmelamine.
On the other hand, b) the melamine compound may include 5 parts by weight to 30 parts by weight, preferably 10 parts by weight to 20 parts by weight based on the total weight of the ink composition. When the content of the b) melamine compound satisfies the numerical range, the viscosity is not high, and thus, the ink is easily ejected by the inkjet method, the pattern is easily formed, and the etching mask is easily removed.
Furthermore, since the viscosity of the b) melamine compound is lower than that of the binder or a commonly used crosslinking agent, the viscosity of the melamine compound is relatively low when added to the ink. Therefore, when the melamine compound is added to the ink instead of the binder or the crosslinking agent, there is a margin in the viscosity, thereby increasing the solid content by about 1% to 5%.
In addition, if the solid content of the same content, it is possible to increase the content of the melamine compound to lower the head heating temperature when the ink is ejected to the inkjet equipment. As a result, the ink can be discharged at a low temperature, thereby solving the problem of no ejection of ink due to the nozzle drying caused by the high head heating temperature.
Next, the c) fluorine-based surfactant is to control the spreadability of the ink, it is preferable that the excellent defoaming characteristics because the poor discharge occurs when bubbles generated during the ink injection to the inkjet equipment is not easily removed.
In particular, in the ink composition of the present invention, the c) fluorine-based surfactant may include polyethylene glycol and perfluorocarbon. When using a surfactant containing polyethylene glycol and perfluorocarbon, the spreadability of the ink is easily controlled, and the ink does not flow easily, so that the pattern is easily formed on the silicon substrate having surface irregularities. There is this.
In addition, the c) fluorine-based surfactant may include 0.01 parts by weight to 1.00 parts by weight, preferably 0.01 parts by weight to 0.50 parts by weight, more preferably 0.03 parts by weight to 0.10 parts by weight based on the ink composition. When the content of the fluorine-based surfactant satisfies the numerical range, the pattern may be formed reproducibly, and the storage stability of the ink is excellent.
Next, the d) organic solvent may be a boiling point of 140 ℃ to 250 ℃. When the boiling point of the organic solvent satisfies the numerical range, the solvent may be easily dried after the pattern is formed and ink may be easily discharged by using an inkjet method by slowing down the drying speed of the nozzle surface.
Here, the d) organic solvent is diethylene glycol methyl butyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol monoethyl Ether acetate, dipropylene glycol methyl ether acetate, methoxy ethanol, butoxy ethyl acetate, butoxy propanol, butyl lactate, ethoxy ethanol, ethoxy ethyl acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, ethyl Ethoxy propionate, propylene glycol methyl ether acetate, propylene glycol monoethyl ether and propylene glycol butyl ether may be one or two or more selected from the group consisting of, but is not limited thereto.
At this time, the d) the organic solvent may include 50 parts by weight to 70 parts by weight, 55 parts by weight to 65 parts by weight or 55 parts by weight to 60 parts by weight based on the total weight of the ink composition. When the content of the organic solvent satisfies the numerical range, the viscosity is not high and ink is easily ejected from the inkjet head.
Optionally, the ink composition according to the present invention may further include an adhesion promoter in order to improve the adhesion property with the silicon substrate. When the adhesive properties with the silicon substrate is insufficient as described above, there is a problem in that the dropout of the pattern is caused by the acid solution used for the selective etching of the emitter layer of the solar cell manufacturing method to be described later to prevent this.
Herein, the adhesion promoter may be used without limitation, those well known in the art, and those having a substituent that generates a silanol group by hydrolysis, or those having a methoxy silyl group or an ethoxy silyl group in the molecule may be used. . For example, vinyltrimethoxysilane, vinyltriethoxysilane, glycidoxypropyltrimethoxysilane, glycidoxypropyltriethoxysilane, methacryloxypropyltrimethoxysilane, methacryloxypropyltriethoxy It may be one or more selected from the group consisting of silanes, but is not limited thereto.
In the ink composition according to the present invention, the viscosity may be 10 cP to 100 cP or 30 cP to 80 cP. When the viscosity of the ink composition satisfies the above numerical range at room temperature, it is easy to discharge ink on the nozzle face of the head and stable ink discharge is possible. In addition, since it is easy to reach a suitable viscosity value by applying a temperature to the head there is an advantage that the line pattern formation is easy.
In the ink composition according to the present invention, the solids content of the ink composition may be 25% to 45%. When the solids content in the ink composition of the present invention satisfies the above numerical range, the thickness of the final mask is not thin after the pattern is dried, so that the surface irregularities of the silicon substrate may be completely covered, and ink ejection may be easily performed by an inkjet method. have. 3 is a photograph of a cross section measured by an electron scanning microscope after etching mask pattern formation. Referring to FIG. 3, when the solid content is used to form a pattern using the ink composition according to the present invention, which satisfies the numerical range, it can be seen that the pattern is completely covered by covering the unevenness of the surface of the silicon substrate.
When using the ink composition according to the present invention as described above, since the pattern can be formed on the silicon substrate for solar cells having surface irregularities when manufacturing the solar cell, it can be used as an etching mask for forming the selective emitter layer.
Etch mask for solar cells formed using the ink composition according to the present invention as described above, has excellent performance to withstand etching in the process for forming a selective emitter, easy to remove from alkaline solution reproducibility and stability when manufacturing solar cells There is an advantage that can provide.
In the solar cell manufacturing method according to the present invention, forming an etching mask pattern using the ink composition according to the present invention, selectively etching the emitter layer using the etching mask pattern as a mask and the etching mask pattern Characterized in that it comprises a step of removing.
Forming the etch mask pattern may be performed by applying the ink composition and a heat treatment step.
In this case, the applying of the ink composition may be performed by a method well known in the art, but is not limited thereto. For example, the ink composition may be performed by a gravure offset, inkjet or silk screen method.
In particular, in the solar cell manufacturing method according to the present invention, the coating of the ink composition for forming the etching mask pattern may be performed by an inkjet printing method. In the case of using the inkjet printing method as described above, since the mask pattern can be formed in a non-contact manner, the manufacturing process can be simplified and the stability can be improved.
In addition, the heat treatment step may be carried out at 150 ℃ to 200 ℃, 10 minutes to 30 minutes. When the heat treatment temperature and time satisfies the numerical range, acid resistance is improved, and there is an advantage in that the pattern is not dropped and separated by an acid solution which can be used in the selective etching step of the emitter layer, which will be described later. In addition, there is an advantage that it can be easily removed in the stripper even in the step of removing the etching mask pattern to be described later.
Next, the step of selectively etching the emitter layer may be performed by a wet or dry etching method, preferably by a wet etching method.
Here, the wet etching method may be performed with an acid solution selected from the group consisting of HF, HNO 3 , CH 3 COOH, and water, but is not limited thereto. At this time, the content of each component in the solution is HF: HNO 3 The ratio of water may be mixed in a volume ratio of 1: 10 to 100: 10 to 50.
Next, the step of removing the etching mask pattern may be performed by applying a stripper well known in the art, for example, monoethanolamine, methylethanolamine, aminoisopropanol, aminopropanol, aminoethoxyethanol, methyl Aminoethanol, aminopropanol, methylpyrrolidone, dimethylacetamide, diethylene glycol monoethyl ether, dimethylformamide and the like.
In this case, the stripper may be performed by immersing an etching mask pattern, and preferably, may be applied by spraying.
The solar cell manufacturing method of the present invention may further include a cleaning step after selectively etching the emitter layer and removing the etching mask pattern. For example, the washing may be performed by washing with ultrapure water.
In this manner, a selective emitter layer may be formed to improve the efficiency of the solar cell in the solar cell manufacturing process.
Hereinafter, the present invention will be described in more detail with reference to preferred embodiments of the present invention.
Example One
31.5 parts by weight of a novolak resin having a weight average molecular weight of 1000 prepared by mixing m-cresol and p-cresol weight ratio 5: 5, 10.5 parts by weight of hexamethoxymethylmelamine as a melamine compound, and 0.035 parts by weight of fluorine-based surfactant 43.9 parts by weight of butyl ether and 14.0 parts by weight of diethylene glycol monobutyl ether acetate were dissolved in a mixed solvent for 2 hours to prepare an ink composition of the present invention.
At this time, the solid content is a value calculated based on the weight part of the total ink composition, excluding the solvent, the viscosity is a value measured at room temperature (25 ℃) using a viscometer, the temperature applied to the head during ink ejection Is a value input to the head of an inkjet printer by measuring the viscosity by increasing the temperature by 5 ° C. from room temperature (25 ° C.) to 80 ° C. in order to obtain a viscosity of 15 cP.
Example 2, Example 3
To the ink composition was prepared in the same manner as in Example 1 in the composition and content shown in Table 1.
Comparative Example One
10.5 parts by weight of a novolak resin having a weight average molecular weight of 1000 prepared by mixing m-cresol and p-cresol by weight 5: 5, 31.5 parts by weight of hexamethoxymethylmelamine as a melamine compound, and 0.035 parts by weight of fluorine-based surfactant 54.5 parts by weight of butyl ether and 3.5 parts by weight of diethylene glycol monobutyl ether acetate were dissolved in a mixed solvent for 2 hours to prepare an ink composition.
At this time, the solid content of the ink composition prepared according to Comparative Example 1 was 42.1%, the viscosity was 15.8cP, the temperature applied to the head during the ink discharge was 27.4 ℃.
Comparative Example 2
An ink composition was prepared using the same composition and method except that the silicone surfactant (BYK) was used instead of the fluorine-based surfactant in Example 1.
Experimental Example
line Pattern Formation
Using the ink compositions prepared in Examples 1 to 3 and Comparative Example 1 to form a pattern on the silicon substrate with the surface irregularities by the inkjet method.
The results of measuring the formation of a line pattern using the ink compositions according to Examples 1 to 3 and Comparative Examples 1 to 2 are shown in Table 2. Formation of the line pattern was measured visually, "O" means that the line pattern is formed well, "X" means that the line pattern is not formed.
1 shows the pattern formation results using the ink compositions according to Examples 1 to 3, Figure 2 shows the pattern formation results using the ink compositions according to Comparative Examples 1 and 2.
As a result of pattern formation, as shown in Table 2, FIG. 1 and FIG. 2, when using the ink compositions prepared according to Examples 1 to 3, line pattern formation was possible, respectively, but inks prepared according to Comparative Examples 1 and 2. When using the composition, a line pattern could not be formed.
Whether the pattern is dropped or disassembled
An etch mask pattern was formed on the top of the emitter layer using the ink composition of Example 1. Next, to selectively etch the emitter layer, HF: HNO 3 : Water was treated for 1 minute using an acid solution mixed in a volume ratio of 1:40:20, and washed with ultrapure water for 1 minute.
Thereafter, whether the etching mask pattern was dropped or disassembled was visually measured using an optical microscope.
The results are as shown in FIG. 4 is a photograph after selectively etching the emitter layer. Referring to Figure 4, it can be seen that despite the acid solution treatment is maintained stably without dropping or decomposition of the pattern.
In alkaline solution Etching Ease of Removal of Mask
An etching mask pattern was formed using the ink composition of Example 1. Next, to selectively etch the emitter layer, HF: HNO 3 : Water was treated for 1 minute using an acid solution mixed at a volume ratio of 1:40:20, and washed with ultrapure water for 1 minute.
Next, the stripper was treated for 1 minute to remove the etch mask pattern, and then washed with ultrapure water for 1 minute.
Thereafter, the removal of the etching mask was visually measured using an optical microscope.
The results are as shown in FIG. FIG. 5 is a photograph illustrating the removal of the etching mask pattern remaining after the emitter layer is selectively etched by the stripper. Referring to FIG. 5, it can be seen that the etching mask is easily removed.
Over time Contact angle change
Using the ink compositions of Examples 1 and 2 and Comparative Examples 1 and 2, the change in contact angle over time was measured using a contact angle measuring instrument (KSAS DSA100).
The results are as shown in FIG. Referring to FIG. 6, in Examples 1 and 2 using a fluorine-based surfactant, there is no significant change in contact angle over time, compared to Comparative Examples 1 and 2 using a silicone-based surfactant, thereby stably forming a pattern. I can see that there is.
On the other hand, the contact angle in the present specification means the angle between the tangent and the surface of the substrate leading to the droplet surface at the point where the droplet and the substrate of the dropped ink contact.
Claims (15)
b) 5 to 30 parts by weight of the melamine compound;
c) 0.01 to 1.00 parts by weight of fluorine-based surfactant; And
d) An ink composition for a solar cell comprising 50 parts by weight to 70 parts by weight of an organic solvent.
The alkali-soluble resin is a phenol resin, acrylic resin, hydroxy styrene, polyvinyl phenol or polyimide resin ink composition for solar cells.
The phenol resin is a novolak resin solar cell ink composition.
The weight average molecular weight of the novolak resin is 500 to 7000 solar cell ink composition.
≪ Formula 1 >
Wherein, R 1, R 2, R 3, R 4, R 5 and R 6 are each independently hydrogen, an alkyl group of C 1 -6, C 1 -6 alkoxy group, a carboxyl group, C 1 -6 of the ether group , a C 1 -6 alcohol group, an amino group, a nitro group, a hydroxyl group, a phenyl group or an acrylic giim.
The organic solvent has a boiling point of 140 ° C to 250 ° C solar cell ink composition.
The organic solvent is diethylene glycol methyl butyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether acetate, di Propylene glycol methyl ether acetate, methoxy ethanol, butoxy ethyl acetate, butoxy propanol, butyl lactate, ethoxy ethanol, ethoxy ethyl acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, ethyl ethoxy propio At least one kind of solar cell ink composition selected from the group consisting of nate, propylene glycol methyl ether acetate, propylene glycol monoethyl ether and propylene glycol butyl ether.
The fluorine-based surfactant is a solar cell ink composition comprising polyethylene glycol and perfluorocarbon.
The ink composition has a substituent which generates a silanol group by hydrolysis or an ink composition for a solar cell further comprising an adhesion promoter having a methoxy silyl group or an ethoxy silyl group in the molecule.
The ink composition has a viscosity of 10cP to 100cP solar cell ink composition.
The ink composition has a solid content of 25 parts by weight to 45 parts by weight of the ink composition for a solar cell.
Selectively etching the emitter layer using the etching mask pattern as a mask; And
The solar cell manufacturing method comprising the step of removing the etching mask pattern.
Forming the etching mask pattern is a solar cell manufacturing method comprising the step of applying the ink composition and the heat treatment step.
Applying the ink composition is a solar cell manufacturing method performed by an inkjet printing method.
The heat treatment step is a solar cell manufacturing method performed at 150 ℃ to 200 ℃ 10 minutes to 30 minutes.
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| JP2010250109A (en) | 2009-04-16 | 2010-11-04 | Fujifilm Corp | Positive photosensitive composition, transparent conductive film, display element and integrated solar battery |
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