KR20130119616A

KR20130119616A - Light-emitting device

Info

Publication number: KR20130119616A
Application number: KR1020120042550A
Authority: KR
Inventors: 문지형; 이상열; 송준오; 정세연; 전준우; 성태연
Original assignee: 엘지이노텍 주식회사; 고려대학교 산학협력단
Priority date: 2012-04-24
Filing date: 2012-04-24
Publication date: 2013-11-01

Abstract

A light emitting device includes a first conductivity type semiconductor layer under an active layer, a second conductivity type semiconductor layer arranged on the active layer, a transparent conduction layer arranged on the second conductivity type semiconductor layer, and a current spreading layer arranged between the second conductivity type semiconductor layer and the transparent conduction layer. The current spreading layer includes lines that are separated from each other.

Description

Light-emitting device

An embodiment relates to a light emitting element.

Light-emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light.

The light emitting device can obtain light having high luminance, and is widely used as a light source for a display, a light source for an automobile, and a light source for an illumination, and emits white light having high efficiency by using a fluorescent material or by combining light emitting diodes of various colors. Diodes can also be implemented.

The embodiment provides a light emitting device capable of improving current spreading performance.

The embodiment provides a light emitting device capable of improving electrical characteristics.

The embodiment provides a light emitting device capable of obtaining uniform light.

The embodiment provides a light emitting device capable of improving light efficiency.

According to an embodiment, the light emitting device comprises: an active layer; A first conductivity type semiconductor layer disposed under the active layer;

A second conductivity type semiconductor layer disposed on the active layer; A transparent conductive layer disposed on the second conductive semiconductor layer; And a current spreading layer disposed between the second conductive semiconductor layer and the transparent conductive layer, wherein the current spreading layer includes a plurality of lines spaced apart from each other.

In an embodiment, a current spreading layer may be disposed below the transparent conductive layer, thereby improving current spreading characteristics of the transparent conductive layer.

According to the embodiment, the current spreading layer is disposed under the transparent conductive layer, thereby improving ohmic contact characteristics with the light emitting structure.

In the embodiment, a current spreading layer is disposed under the transparent conductive layer so that light is reflected by the current spreading layer, and the tube is eventually transmitted through the current spreading layer, thereby improving light efficiency.

According to the embodiment, the current spreading layer is disposed under the transparent conductive layer so that the current spreading layer and the light emitting structure come into contact with each other, thereby improving light efficiency due to the improved ohmic contact property at the contact interface.

In the embodiment, a current spreading layer is disposed under the transparent conductive layer, thereby improving electrical characteristics and light output characteristics and obtaining uniform light.

1 is a cross-sectional view showing a light emitting device according to the first embodiment.
2 to 4 are plan views showing the arrangement of the current spreading layer.
5 is a graph showing the transmittance according to the arrangement structure of the current spreading layer.
6 is a graph showing the electrical characteristics according to the arrangement structure of the current spreading layer.
7 is a graph illustrating light output characteristics according to an arrangement structure of a current spreading layer.
8 is a view showing a light emitting image according to the arrangement structure of the current spreading layer.
9 to 13 illustrate a manufacturing process of the light emitting device according to the first embodiment.
14 is a cross-sectional view illustrating a light emitting device according to the second embodiment.
15 is a cross-sectional view illustrating a light emitting device according to the third embodiment.
16 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
17 is an exploded perspective view of a display device according to an exemplary embodiment.
18 is a diagram illustrating a display device having a light emitting device according to an embodiment.
19 is a perspective view of a lighting apparatus according to an embodiment.

In the description of the embodiment according to the invention, in the case where it is described as being formed on the "top" or "bottom" of each component, the top (bottom) or the bottom (bottom) means that the two components It includes both direct contact or one or more other components disposed between and formed between the two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

1 is a cross-sectional view showing a light emitting device according to the first embodiment.

Referring to FIG. 1, the semiconductor light emitting device 10 according to the first embodiment may include a substrate 11, a light emitting structure 19, a current spreading layer 20, a transparent conductive layer, and first and second electrodes 31. , 33).

The light emitting structure 19 may be disposed on the substrate 11, and the current spreading layer 20 and the transparent conductive layer 32 may be disposed on the light emitting structure 19.

The first electrode 34 may be disposed on a portion of the light emitting structure 19, and the second electrode 36 may be disposed on the transparent conductive layer 32.

The substrate 11 may function as the substrate 11 for growing the light emitting structure 19, but is not limited thereto.

In order to stably grow the light emitting structure 19, the substrate 11 may be formed of a material having a small difference in lattice constant from the light emitting structure 19.

The substrate 11 may be formed of at least one selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

A buffer layer (not shown) may be disposed between the substrate 11 and the light emitting structure 19. The buffer layer may be formed to alleviate the lattice constant difference between the substrate 11 and the light emitting structure 19.

Each of the buffer layer and the light emitting structure 19 may be formed of a III-V compound semiconductor material.

The light emitting structure 19 may include, for example, a first conductive semiconductor layer 13, an active layer 15, and a second conductive semiconductor layer 17. The first conductivity type semiconductor layer 13 is formed on the substrate 11 or the buffer layer, and the active layer 15 is formed on the first conductivity type semiconductor layer 13, and the second conductivity type is formed. The semiconductor layer 17 may be formed on the active layer 15.

The first conductive semiconductor layer 13 may be, for example, an n-type semiconductor layer including an n-type dopant. The n-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, InAlGaN, GaN, It may include at least one selected from the group consisting of AlGaN, InGaN, AlN, InN, and AlInN, and may be doped with an n-type dopant such as Si, Ge, Sn, or the like.

The active layer 15 may be formed on the first conductive semiconductor layer 13.

The active layer 15 combines a first carrier, for example, electrons injected through the first conductivity type semiconductor layer 13, and a second carrier, for example, holes injected through the second conductivity type semiconductor layer 17, to each other. The light emitting layer may emit light having a wavelength corresponding to a difference in a band gap of an energy band according to a material forming the active layer 15.

The active layer 15 may include any one of a single quantum well structure, a multiple quantum well structure (MQW), a quantum dot structure, or a quantum line structure. The active layer 15 may be formed by repeating the Group 3 to Group 5 compound semiconductors in a cycle of a well layer and a barrier layer.

For example, it may be formed by a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, or a period of the InGaN well layer / InGaN barrier layer. The band gap of the barrier layer may be formed to be larger than the band gap of the well layer.

The second conductivity type semiconductor layer 17 may be formed on the active layer 15. The second conductive semiconductor layer 17 may be, for example, a p-type semiconductor layer including a p-type dopant. The p-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, InAlGaN, GaN, It may include at least one selected from the group consisting of AlGaN, InGaN, AlN, InN, and AlInN, and may be doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba.

The transparent conductive layer 32 may be formed on the second conductive semiconductor layer 17, and the second electrode 36 may be disposed on the transparent conductive layer 32.

The second electrode 36 includes an opaque metal material, for example, aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), tungsten (W). ), Copper (Cu) and molybdenum (Mo) may include one or an alloy thereof, but is not limited thereto.

When the second electrode 36 is disposed to correspond to the entire area of the light emitting structure 19, the light generated from the light emitting structure 19 is blocked by the second electrode 36 so that the light is forward. Can not be released.

Therefore, the second electrode 36 may be locally disposed in a portion of the light emitting structure 19.

When the second electrode 36 is locally disposed in a portion of the light emitting structure 19, the second electrode 36 is disposed under the second electrode 36 or by the power applied to the first and second electrodes. Current is concentrated locally around the electrode 36. Due to this current concentration, light is not uniformly emitted from all regions of the light emitting structure 19.

In order to solve this problem, in order to allow the current supplied to the second electrode 36 to be current spreaded to the entire area of the light emitting structure 19, the transparent conductive layer ( 32 may be arranged.

The transparent conductive layer 32 includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx At least one selected from the group consisting of RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO.

However, since the transparent conductive layer 32 also has a relatively large resistance compared to the metal material, there is a problem that the current spreading characteristics are not excellent.

In an embodiment, a current spreading layer 20 may be provided between the light emitting structure 19 and the transparent conductive layer 32 to compensate for the current spreading degradation of the transparent conductive layer 32 and maximize the current spreading. Can be deployed.

Accordingly, the current supplied to the second electrode 36 is transferred to the current spreading layer 20 through the transparent conductive layer 32, and the light emitting structure 19 is rapidly formed by the current spreading layer 20. Current spreads to the entire region of the < RTI ID = 0.0 > Since the current is supplied to the entire region of the light emitting structure 19, light is uniformly generated in the entire region of the light emitting structure 19, so that uniform light can be obtained.

The lower surface of the current spreading layer 20 may be disposed to directly contact the upper surface of the light emitting structure 19, specifically, the second conductive semiconductor layer 17.

The current spreading layer 20 may be formed of a metal material having excellent current spreading characteristics. For example, the metal material may include one or a stack thereof selected from the group consisting of Ag, Au, Pt, Ni, Pd, Cu, Ir, Mo, Re, Rh, Ru, Se, and Te. It is not limited.

Since the current spreading layer 20 is made of an opaque metal material, light is hardly transmitted. Accordingly, the current spreading layer 20 may be designed to be partially or locally formed, as shown in FIGS. 2 to 4, so that some light is transmitted and some light is reflected.

The current spreading layer 20 may have a stripe shape, as shown in FIG. 2, or may have a mesh shape, as shown in FIGS. 3 and 4. It is not limited.

As shown in FIG. 2, the current spreading layer 20 may include a plurality of lines 22 formed long in one direction. Each line 22 may be arranged to be spaced apart from each other.

Each line 22 has a width W of 1 μm to 3 μm and may have a thickness of 5 nm to 1 μm.

More preferably, the line 22 may have a thickness of 20nm to 200nm.

When the width W of the line 22 is 1 μm or less, the line may be disconnected after the heat treatment process, and when the width W of the line 22 is 3 μm or more, light is transmitted between the lines 22. Instead, absorption phenomenon in which light is absorbed may occur.

When the thickness of the line 22 is 5 nm or less, the line may be disconnected after the heat treatment process, and when the thickness of the line 22 is 1 μm or more, the photoresist may not be lifted off during the lift-off process.

The distance d between the lines 22 may range from 7 μm to 100 μm.

When the distance d between the lines 22 is 7 μm or less, an absorption phenomenon occurs in which light is transmitted without being transmitted between the lines 22, and when the distance d between the lines 22 is 100 μm or more, The number of lines 22 may be small so that the current spreading characteristic may not be improved.

The ratio of the width W of the line 22 to the distance d between the line 22 may be 1: 3 to 1:40. In other words, the distance d between the lines 22 may range from 3 times to 40 times the width W of the line 22.

When the ratio W of the width W of the line 22 and the distance d between the lines 22 is 1: 3 or less, an absorption phenomenon may occur in which light is not transmitted between the lines 22 without being transmitted. When the ratio of the width (W) of the line 22 to the distance d between the line 22 is 1:40 or more, the number of the lines 22 may be small so that the current spreading characteristic may not be improved.

A recess region 30 without the current spreading layer 20 may be formed between the lines 22. The recess region 30 may be formed in the same stripe shape as the line 22. Light of the active layer 15 may be absorbed or reflected by the line 22 and transmitted through the recess region 30.

The lines 22 are arranged in the longitudinal direction, in the horizontal direction or in the diagonal direction, but are not limited thereto.

As illustrated in FIG. 3, the current spreading layer 20 includes a plurality of first lines 24 elongated along a first direction and a plurality of agents elongated along a second direction crossing the first direction. It may include two lines 26.

For example, the first and second directions may be perpendicular to each other, but are not limited thereto.

The first and second lines 24 and 26 may cross each other to have a mesh structure. For example, the plurality of first lines 24 spaced apart from each other may be arranged to intersect the plurality of second lines 26 spaced apart from each other along the second direction.

A plurality of recess regions 30 may be formed by crossing the first line 24 and the second line 26. The recess region 30 is a region where the current spreading layer 20 is not formed, and may transmit light.

Light of the active layer 15 may be absorbed or reflected by the first and second lines 24 and 26 and transmitted through the recess region 30.

Each of the first and second lines 24 and 26 may have a width W1 and W2 of 1 μm to 3 μm, and may have a thickness of 5 nm to 1 μm.

More preferably, each of the first and second lines 24 and 26 may have a thickness of 20 nm to 200 nm.

When the widths W1 and W2 of the lines 24 and 26 are 1 μm or less, the line may be disconnected after the heat treatment process, and when the widths W1 and W2 of the lines 24 and 26 are 3 μm or more, An absorption phenomenon may occur in which light is not transmitted between the lines 24 and 26 and light is absorbed.

The first and second lines 24 and 26 may have the same width or different widths, but are not limited thereto.

When the thickness of the lines 24 and 26 is 5 nm or less, the line may be disconnected after the heat treatment process, and when the thickness of the lines 24 and 26 is 1 μm or more, the photoresist may not be lifted off during the lift off process. Can be.

The distance d1 between the first line 24 and the distance d2 between the second line 24 may have a range of 7 μm to 100 μm.

When the distance d1 between the first line 24 and / or the distance d2 between the second line 26 is 7 μm or less, an absorption phenomenon occurs in which light is not transmitted between the lines 24 and 26 and is absorbed. If the distance d1 between the first line 24 and / or the distance d2 (d) between the second line 26 is 100 μm or more, the number of lines 24 and 26 decreases so that the current sp. Reading properties may not be improved.

The distance d1 between the first line 24 and the distance d2 between the second line 26 are the same or different from each other, but are not limited thereto.

The ratio of the distance d1 between the width W1 of the first line 24 and the first line 24 may be 1: 3 to 1:40. In other words, the distance d1 between the first line 24 may range from 3 times to 40 times the width W1 of the first line 24.

When the ratio of the width W1 of the first line 24 to the distance d1 between the first line 24 is less than or equal to 1: 3, an absorption phenomenon in which light is absorbed without being transmitted between the first lines 24 may occur. Can be generated. When the ratio of the width d of the first line 24 to the distance d1 between the first line 24 is greater than or equal to 1:40, the number of the first lines 24 decreases, thereby improving current spreading characteristics. It may not be possible.

When the ratio of the width W2 of the second line 26 to the distance d2 between the second line 26 is less than or equal to 1: 3, an absorption phenomenon in which light is not transmitted between the second lines 26 is absorbed. Can be generated. When the ratio of the width W2 of the second line 26 to the distance d2 between the second line 26 is greater than or equal to 1:40, the number of the second lines 26 decreases to improve current spreading characteristics. It may not be possible.

FIG. 4 shows a first line 24 or / and a second line in at least a portion of the recessed region 3 of the current spreading layer 20 corresponding to the edge region of the light emitting structure 19 in comparison with FIG. 3. The two are substantially the same except that the structure 26 is not formed. Therefore, from the drawings of FIG. 3 and the related descriptions above, FIG. 4 can be easily understood, and thus a detailed description thereof will be omitted.

The lower surface of the line 22 of FIG. 2 and the lower surfaces of the first and second lines 24 and 26 of FIGS. 3 and 4 may directly contact the upper surface of the second conductive semiconductor layer 17.

A recess region 30 may be formed between the lines 22 and by the intersection of the first and second lines 24 and 26.

Accordingly, light from the active layer 15 may be absorbed or reflected by the line 22 and the first and second lines 24 and 26 and may be transmitted through the recess region 30.

Meanwhile, at the interface between the current spreading layer 20 and the second conductive semiconductor layer 17, a material of the current spreading layer 20 and the second conductive semiconductor layer 17 are combined with each other, for example. A bonding layer (not shown) including Ag-Ga may be formed. The current spreading layer 20 may be heat treated to form such a bonding layer, but is not limited thereto.

In addition, since Ga escapes from the upper surface of the second conductivity-type semiconductor layer 17 to the bonding layer (out-diffusion), Ga vacancy is formed on the upper surface of the second conductivity-type semiconductor layer 17 to form the current soup. Since the reading layer 20 and the second conductive semiconductor layer 17 are in ohmic contact, the electric current is more easily supplied to the second conductive semiconductor layer 17 through the current spreading layer 20. Can be improved.

Apart from forming an artificial ohmic contact by the heat treatment, the current spreading layer 20 is formed of an ohmic contact material capable of forming an ohmic contact with the second conductivity type semiconductor layer 17, thereby providing electrical characteristics. This may be improved.

The ohmic contact material may include, but is not limited to, one or a stack thereof selected from the group consisting of Ag, Ni, Au, NiMg, ZnNi, NiLa, Pd, Ru, Re, Pt, and Rh.

The current spreading layer 20 may be formed of a reflective metal material. When the current spreading layer 20 is formed of a reflective metal material, some of the light generated from the active layer 15 of the light emitting structure 19 is partially exposed to the lines 22, 24, Transmitted between 26, and other portions may be reflected by the lines 22, 24, 26. The reflected light is reflected back in the light emitting structure 19 and is transmitted through the lines 22, 24, 26 of the current spreading layer 20, so that the current spreading layer 20 reflects. Since it is formed of a metal material, the light efficiency can be improved.

Reflective metal materials may include, but are not limited to, one or a stack thereof selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

As described above, the transparent conductive layer 32 may be disposed on the current spreading layer 20.

The transparent conductive layer 32 may be formed on the second conductive semiconductor layer 17 and the current spreading layer 20.

That is, the transparent conductive layer 32 has a first lower surface directly contacting the upper surface of the second conductive semiconductor layer 17 between the lines 22, 24, and 26 and the lines 22, 24, and 26. It may include a second lower surface in direct contact with the upper surface of the.

The transparent conductive layer 32 may include a first region where the first lower surface is located and a second region where the second lower surface is located.

The first region may have a thickness thicker than that of the second region. That is, the thickness between the upper surface of the transparent conductive layer 32 and the first lower surface of the transparent conductive layer 32 is between the upper surface of the transparent conductive layer 32 and the second lower surface of the transparent conductive layer 32. It can be formed larger than the thickness.

Light transmitted through the recess region 30 of the current spreading layer 20 may be incident on the first lower surface of the transparent conductive layer 32 to pass through the transparent conductive layer 32.

Light incident through the recess region 30 of the current spreading layer 20 may be reflected by the side surfaces of the lines 22, 24, and 26 of the current spreading layer 20.

Sides of the lines 22, 24, and 26 of the current spreading layer 20 may be perpendicular to or inclined with respect to the top surface of the second conductive semiconductor layer 17, but are not limited thereto.

The thickness of the first region in which the first lower surface is positioned in the transparent conductive layer 32 may be 110% to 200% of the thickness of the lines 22, 24, and 26 of the current spreading layer 20. It does not limit to this.

Meanwhile, mesa etching may be performed to remove a portion of the light emitting structure 19 to form a groove in which the top surface of the first conductive semiconductor layer 13 of the light emitting structure 19 is exposed.

The first electrode 34 may be formed in a portion of the upper surface of the first conductive semiconductor layer 13 of the groove.

The first electrode 34 may be formed of a metal material having excellent conductivity. The metal material may include, but is not limited to, one or a lamination thereof selected from the group consisting of Al, Ti, Cr, Ni, Pt, Au, W, Cu, and Mo, for example.

The transmittance, electrical characteristics, and light output characteristics of the light emitting device according to the first embodiment described above are shown in Figs.

5 to 8, 1-D denotes a stripe-shaped current spreading layer of FIG. 2, and 2-D denotes a mesh-shaped current spreading layer of FIGS. 3 and 4.

Further, '2.8', '6.7' and '19 .7 'represent the ratio of the line width to the distance between the lines in the stripe-shaped current spreading layer, and' 7.0 ', '26 .5' and '38 .7 ' It represents the ratio of the line width to the distance between the lines in the current spreading layer.

In addition, AZO was used as a transparent conductive layer.

As shown in FIG. 5, when the current spreading layer is not formed (AZO), the transmittance is highest, and the mesh-shaped current spreading layer has higher transmittance than the stripe-shaped current spreading layer, and the line width and the line It can be seen that the transmittance increases as the ratio of the distance between them increases.

When the current spreading layer is not used (AZO) is higher than the case where the current spreading layer is used (1-D, 2-D), but the current spreading layer is used (1-D, Comparatively excellent transmittance was also obtained in 2-D).

As shown in FIG. 6, when the current spreading layer is not formed (AZO), Vf of 7.44 V is obtained, whereas when the current spreading layer having a stripe shape is adopted (1-D), approximately 3.75 V to 4.05 V It can have a Vf of, and may have a Vf of approximately 4.10V to 5.03V when a mesh-shaped current spreading layer is employed (2-D).

Therefore, when the current spreading layer is formed (1-D, 2-D) is more excellent than when the current spreading layer is not formed (AZO) is not formed, the mesh-shaped current spreading It can be seen that the stripe-shaped current spreading layer 1-D has better electrical characteristics than the reading layer 2-D.

As shown in FIG. 7, in the case of the stripe-shaped current spreading layer 1-D and the mesh-shaped current spreading layer 2-D, as compared with the case where the current spreading layer is not used (AZO). It can be seen that it has a remarkably excellent light output characteristic.

Experimental results show that the light output characteristics of the mesh-shaped current spreading layer are up to approximately 80% higher than that of the AZO without the current spreading layer, and that of the stripe-shaped current spreading layer is improved. Up to about 110% improvement.

From the above experimental results, it can be seen that the light emitting device of the embodiment has significantly improved electrical characteristics and light output characteristics compared to the light emitting device in which the current spreading layer is not employed.

8 is a view showing a light emitting image according to the arrangement structure of the current spreading layer.

FIG. 8A is a view showing a light emitting image of a light emitting device in which a current spreading layer is not used, and FIG. 8B is a view showing a light emitting image of a light emitting device employing a stripe-shaped current spreading layer, and FIG. 8C is a mesh. It is a figure which shows the light emission image of the light emitting element employing the shape current spreading layer.

As shown in Fig. 8A, when the current spreading layer is not used, it can be seen that the light is concentrated around the electrode so that the light is concentrated and almost no light is emitted in other areas.

As shown in Figs. 8B and 8C, when the stripe-shaped current spreading layer or the mesh-shaped current spreading layer is adopted, it can be seen that uniform light emission characteristics are obtained in the entire region of the light emitting device.

Therefore, the light emitting device according to the first embodiment employs a current spreading layer, thereby improving current spreading and ohmic characteristics, and improving light efficiency due to reflection characteristics of the current spreading layer. Uniform light can be obtained over the entire area of.

9 to 13 illustrate a manufacturing process of the light emitting device according to the first embodiment.

Referring to FIG. 9, the substrate 11 may be loaded into growth equipment and formed thereon in a layer or pattern form using a III-V compound semiconductor material thereon.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

The substrate 11 is a conductive substrate or an insulating substrate, and for example, may be selected from the group consisting of sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , and GaAs. Can be. An upper surface of the substrate 11 may have a lens-shaped or stripe uneven pattern. In addition, a buffer layer may be formed on the substrate 11. The buffer layer reduces the difference in lattice constant between the substrate 11 and the nitride semiconductor layer, and the material is GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP. Can be selected. An undoped semiconductor layer may be formed between the buffer layer and the light emitting structure, and the undoped semiconductor layer may be formed of an undoped GaN-based semiconductor, and may be formed of a lower conductive semiconductor layer than the n-type semiconductor layer. Can be.

A first conductive semiconductor layer 13 is formed on the substrate 11 or the buffer layer, an active layer 15 is formed on the first conductive semiconductor layer 13, and a second conductive layer is formed on the active layer 15. The type semiconductor layer 17 is formed. Other layers may be further disposed above or below each of the layers, and may be formed in a superlattice structure using, for example, a group III-V compound semiconductor layer, without being limited thereto.

The first conductive semiconductor layer 13 is a III-V compound semiconductor material including a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. The first conductivity type semiconductor layer 13 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Can be. The first conductive semiconductor layer 13 may be an n-type semiconductor layer, and the first conductive dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 13 may be formed as a single layer or a multilayer, but is not limited thereto. The first conductive semiconductor layer 13 may include a superlattice structure in which two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP are alternately disposed. Can be.

An active layer 15 is formed on the first conductive semiconductor layer 13, and the active layer 15 has a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. It may also include. The active layer 15 may be formed in a cycle of a well layer and a barrier layer by using a compound semiconductor material of Group III-Group 5 elements. The well layer is formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and the barrier layer is In _x It may be formed of a semiconductor layer having a compositional formula of Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). The barrier layer may be formed of a material having a band gap higher than that of the well layer.

A first cladding layer (not shown) may be formed between the active layer 15 and the first conductive semiconductor layer 13, and the first cladding layer may be a first conductive GaN-based semiconductor or the active layer ( It may be formed of a material having a higher band gap than the material of 15). The band gap of the barrier layer may be higher than the band gap of the well layer, and the band gap of the first clad layer may be higher than the band gap of the barrier layer.

The active layer 15 may include, for example, at least one period of a period of the InGaN well layer / GaN barrier layer, a period of the InGaN well layer / AlGaN barrier layer, and a period of the InGaN well layer / InGaN barrier layer. .

A second clad layer (not shown) is disposed between the active layer 15 and the second conductive semiconductor layer 17, and the second clad layer may be formed of an n-type GaN-based semiconductor, and the second clad The bandgap of the layer may be formed higher than the bandgap of the barrier layer.

The second conductive semiconductor layer 17 is formed on the active layer 15, and the second conductive semiconductor layer 17 includes a group III-V compound semiconductor material including a second conductive dopant such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. The second conductivity type semiconductor layer 17 may be formed of a semiconductor layer having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Can be.

The second conductive semiconductor layer 17 may be a p-type semiconductor layer, and the second conductive dopant may include a p-type dopant such as Mg and Zn. The second conductivity type semiconductor layer 17 may be formed as a single layer or a multilayer, but is not limited thereto.

The second conductive semiconductor layer 17 may include a superlattice structure in which two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP are alternately disposed. Can be.

The first conductive semiconductor layer 13, the active layer 15, and the second conductive semiconductor layer 17 may form a light emitting structure 19.

Referring to FIG. 10, a mesa etching is performed to expose the top surface of the first conductivity type semiconductor layer 13, so that the groove 101 penetrates the second conductivity type semiconductor layer 17 and the active layer 15. Can be formed.

Subsequently, a scribing process may be performed to separate the chip unit including the light emitting structure.

The light emitting structure in the chip unit may be manufactured as a light emitting device by further performing further processes.

11 and 12, the current spreading layer 20 may be formed on the second conductive semiconductor layer 17 by using a lift off process.

First, as shown in FIG. 11, a photoresist pattern 103 may be formed by forming and patterning a photoresist on the second conductive semiconductor layer 17. The pattern of the photoresist pattern 103 corresponds to the recess region of the current spreading layer 20 to be formed later, and the region between the patterns of the photoresist pattern 103 is the current spreading layer 20 to be formed later. ) May correspond to a line.

A metal material including a current spreading material, an ohmic contact material, and / or a reflective metal material may be deposited on the photoresist pattern 103. The metal material may be formed on the pattern of the photoresist pattern 103 and on the second conductive semiconductor layer 17 between the patterns.

Deposition of the metal material may be E-beam or sputtering.

The current spreading material may include one or a stack of one selected from the group consisting of Ag, Au, Pt, Ni, Pd, Cu, Ir, Mo, Re, Rh, Ru, Se, and Te. It is not limited.

The reflective metal material may include, but is not limited to, one or a stack thereof selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. .

The lift-off process may be performed to remove the photoresist pattern 103, and the metal material formed on the pattern of the photoresist pattern 103 may also be removed.

Accordingly, as shown in FIG. 12, the current spreading layer 20 including the stripe-shaped lines or the mesh-shaped first and second lines may be formed on the second conductive semiconductor layer 17. .

The line may have a width of 1 μm to 3 μm and a thickness of 5 nm to 1 μm.

The distance between the lines may range from 7 μm to 100 μm.

The ratio of the width of the line to the distance between the lines may be 1: 3 to 1:40.

Referring to FIG. 13, a transparent conductive layer 32 may be formed on the current spreading layer 20.

The transparent conductive layer 32 is in contact with the second conductivity-type semiconductor layer 17 through a recessed region between the lines of the current spreading layer 20, and the lie of the current spreading layer 20. It may be in contact with the top surface.

The transparent conductive layer 32 may be formed of a transparent conductive material through which light is transmitted. As the transparent conductive material, ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al- Ga ZnO), IGZO RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. However, the present invention is not limited thereto.

The first electrode 34 may be formed on a portion of the upper surface of the first conductive semiconductor layer 13 exposed by the groove, and the second electrode 36 may be formed on the transparent conductive layer 32. have.

The first and second electrodes 34 and 36 may comprise one or a laminate selected from the group consisting of Al, Ti, Cr, Ni, Pt, Au, W, Cu and Mo, I never do that.

14 is a cross-sectional view illustrating a light emitting device according to the second embodiment.

The second embodiment is almost similar to the first embodiment except for a reflective layer disposed between the transparent conductive layer and the second electrode.

In the second embodiment, the same reference numerals are assigned to components having the same functions as the first embodiment, and detailed description thereof will be omitted. The description omitted in the description of the second embodiment can be easily understood from the description of the first embodiment.

Referring to FIG. 14, the light emitting device 10A according to the second embodiment may include a substrate 11, a light emitting structure 19, a current spreading layer 20, a transparent conductive layer 32, a reflective layer 38, and a second layer. It may include the first and second electrodes 40, 42.

The light emitting structure 19 may be disposed under the substrate 11. In the light emitting structure 19, a first conductive semiconductor layer 13, an active layer 15, and a second conductive semiconductor layer 17 may be sequentially disposed on the substrate 11.

That is, the first conductivity type semiconductor layer 13 is disposed under the substrate 11, the active layer 15 is disposed below the first conductivity type semiconductor layer 13, and the second conductivity type semiconductor. Layer 17 may be disposed below the active layer 15.

The first conductive semiconductor layer 13, the active layer 15, and the second conductive semiconductor layer 17 may be formed of a III-V group compound semiconductor material.

The current spreading layer 20 may be formed under the second conductive semiconductor layer 17. The current spreading layer 20 may be formed of a stripe-shaped line or a mesh-shaped line, and a recess region may be formed between the lines.

The current spreading layer 20 may be formed of a metal material including a current spreading material, an ohmic contact material, and / or a reflective metal material.

The line may have a width of 1 μm to 3 μm and a thickness of 5 nm to 1 μm.

The distance between the lines may range from 7 μm to 100 μm.

The transparent conductive layer 32 may be disposed under the current spreading layer 20.

The transparent conductive layer 32 includes a transparent conductive material through which light is transmitted, for example, ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO). At least one selected from the group consisting of IGZO (In-Ga ZnO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, but is not limited thereto.

The reflective layer 38 may be disposed below the transparent conductive layer 32. The reflective layer 38 may reflect light generated from the active layer and traveled downward, thereby ultimately improving light efficiency.

The reflective layer 38 includes a reflective material having excellent reflective properties, for example, one or a stack thereof selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. It may include, but is not limited thereto.

After mesa etching is performed to expose the top surface of the first conductivity type semiconductor layer 13, a first region 40 is disposed on a portion of the top surface of the first conductivity type semiconductor layer 13, and the reflective layer The second electrode 42 may be disposed below the 38.

The first and second electrodes 40, 42 may comprise, for example, one or a stack of these selected from the group consisting of Al, Ti, Cr, Ni, Pt, Au, W, Cu and Mo, but is not limited thereto. I never do that.

15 is a cross-sectional view illustrating a light emitting device according to the third embodiment.

In the third embodiment, the same reference numerals are given to the components having the same functions as the first embodiment, and detailed description thereof is omitted. The description omitted in the description of the third embodiment can be easily understood from the description of the first embodiment.

Referring to FIG. 15, the light emitting device 10B according to the third embodiment may include a light emitting structure 19, a current spreading layer 20, a transparent conductive layer 32, a first protective layer 51, and an electrode layer 53. ), A bonding layer 55, a support substrate 57, and an electrode 65.

The light emitting structure 19 may include a first conductive semiconductor layer 13, an active layer 15, and a second conductive semiconductor layer 17. The active layer 15 may be disposed under the first conductive semiconductor layer 13, and the second conductive semiconductor layer 17 may be disposed under the active layer 15.

The first conductive semiconductor layer 13 may be an n-type semiconductor layer, and the second conductive semiconductor layer 17 may be a p-type semiconductor layer, but is not limited thereto.

The line may have a width of 1 μm to 3 μm and a thickness of 5 nm to 1 μm.

The distance between the lines may range from 7 μm to 100 μm.

The first passivation layer 51 may be disposed on the same layer as the current spreading layer 20. That is, the upper surface of the line of the current spreading layer 20 and the upper surface of the first protective layer 51 may contact the lower surface of the second conductive semiconductor layer 17.

The first passivation layer 51 may be formed along a circumference of the peripheral area of the transparent electrode layer 32 and the second conductivity-type semiconductor layer 17. That is, the first passivation layer 51 may be formed in the peripheral region between the light emitting structure 19 and the electrode layer 53. In detail, the first passivation layer 51 may be formed to be surrounded by the electrode layer 53 and the light emitting structure 19.

The first passivation layer 51 may be formed in a groove formed in an edge region of the electrode layer 53. The bottom and side surfaces of the first passivation layer 51 may be in contact with the electrode layer 53, and the top surface of the first passivation layer 51 may be in contact with the light emitting structure, but is not limited thereto.

The first protective layer 51 may prevent electrical short between the side surface of the electrode layer 53 and the side surface of the light emitting structure 19 by foreign matter.

A laser scribing process of separating a plurality of chips into individual chip units by securing an area where the first protective layer 51 contacts the light emitting structure 19 and a laser lift off process of removing a substrate ( In the LLO process, the light emitting structure 19 may be effectively prevented from being peeled from the electrode layer 53.

The first passivation layer 51 may include at least one selected from the group consisting of an insulating material, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ .

The transparent conductive layer 32 may be disposed under the current spreading layer 20 and the first protective layer 51. An upper surface of the transparent conductive layer 32 may contact a lower surface of the first protective layer 51, a lower surface of the line of the current spreading layer 20, and a lower surface of the second conductive semiconductor layer 17. However, this is not limitative.

The transparent conductive layer 32 may function as an ohmic contact layer forming an ohmic contact with the second conductive semiconductor layer 17.

The current spreading layer 20 may form an ohmic contact that is better than the second conductive semiconductor layer 17 and the transparent conductive layer 32.

Accordingly, in the light emitting device according to the third embodiment, the second conductive semiconductor layer 17 and the transparent conductive layer 32 are disposed so that the current spreading layer 20 is formed to form a better ohmic contact characteristic. The current may be smoothly supplied to the type semiconductor layer 17 to improve the light efficiency.

An electrode layer 53 may be disposed under the transparent conductive layer 32. The electrode layer 53 may include a reflective material having excellent reflection characteristics in order to reflect light generated from the active layer 15 and advanced in a downward direction. The electrode layer 53 may include, but is not limited to, one or a stack thereof, for example, selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. Do not.

The bonding layer 55 and the support substrate 57 may be disposed below the electrode layer 53.

The support substrate 57 may not only support a plurality of layers formed thereon but also have a function as an electrode. The support substrate 57 may supply power to the light emitting structure 19 together with the electrode 65.

The support substrate 57 is, for example, titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), copper (Cu) , Molybdenum (Mo) and copper-tungsten (Cu-W).

The bonding layer 55 is a bonding layer, and is formed between the electrode layer 53 and the support substrate 57. The bonding layer 55 may serve as a medium for enhancing adhesion between the electrode layer 53 and the support substrate 57.

The bonding layer 55 may include a barrier metal or a bonding metal. The bonding layer 55 may include at least one selected from the group consisting of, for example, Ti, Au, Sn, Ni, Nb, Cr, Ga, In, Bi, Cu, Ag, and Ta.

The second passivation layer 59 may be disposed along the circumference of the side surface of the light emitting structure 19. One area of the second passivation layer 59 may be in contact with the top surface of the first passivation layer 51, and the other passivation area may be disposed in an edge region of the top surface of the first conductivity type semiconductor layer 13.

The second protective layer 59 may serve to prevent an electrical short between the light emitting structure 19 and the support substrate 57. The second protective layer 59 may include, for example, an insulating material including one selected from the group consisting of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , TiO _2, and Al ₂ O ₃ . However, it is not limited thereto.

The second passivation layer 59 may include the same material as the first passivation layer 51, but is not limited thereto.

A light extraction structure 62 may be formed on the top surface of the first conductive semiconductor layer 13 to efficiently extract light. The light extraction structure 62 may have an unevenness or roughness structure. The irregularities may be formed uniformly or randomly.

An electrode 65 may be disposed on the light extraction structure 62.

The electrode 65 may include, but is not limited to, one selected from the group consisting of Al, Ti, Cr, Ni, Pt, Au, W, Cu,

16 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

Referring to FIG. 16, the light emitting device package 200 according to the embodiment may include a body 201, a first lead electrode 203 and a second lead electrode 205 installed on the body 201, and the body ( The light emitting devices 10, 10A, and 10B according to the first to third embodiments, which are installed at the first lead electrode 203 and the second lead electrode 205, and are supplied with power from the first lead electrode 203 and the second lead electrode 205. And a molding member 209 surrounding the light emitting elements 10, 10A, and 10B.

The body 201 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 10.

The first lead electrode 203 and the second lead electrode 205 are electrically separated from each other, and provide power to the light emitting devices 10, 10A, and 10B.

In addition, the first and second lead electrodes 203 and 205 may increase light efficiency by reflecting light generated from the light emitting devices 10, 10A, and 10B. The light emitting devices 10, 10A, and 10B may be increased. It may also play a role in dissipating heat generated from) to outside.

The light emitting devices 10, 10A, and 10B may be installed on any one of the first lead electrode 203, the second lead electrode 205, and the body 201, and may be formed by a wire method, a die bonding method, or the like. It may be electrically connected to the first and second lead electrodes 203 and 205, but is not limited thereto.

The light emitting device package according to the embodiment is illustrated by the light emitting device 10B according to the third embodiment, but is not limited thereto.

For example, as illustrated, in the light emitting device 10B according to the third exemplary embodiment, the first and second lead electrodes 203 and 205 may be connected to each other by a wire 207 and an electrode below the light emitting device. Can be electrically connected.

In the light emitting device according to the first embodiment, two wires may be electrically connected to the first and second lead electrodes 203 and 205.

In the case of the light emitting device according to the second exemplary embodiment, the wire may not be used and may be electrically connected to the first and second lead electrodes 203 and 205 directly using a bumper.

The molding member 209 may surround the light emitting devices 10, 10A, and 10B to protect the light emitting devices 10, 10A, and 10B. In addition, the molding member 209 may include a phosphor to change the wavelength of light emitted from the light emitting devices 10, 10A, and 10B.

In addition, the light emitting device package 200 according to the embodiment includes a chip on board (COB) type, the upper surface of the body 201 is flat, the body 201 is a plurality of light emitting devices (10, 10A, 10B) ) May be installed.

The light emitting devices 10, 10A, and 10B according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting elements 10, 10A, and 10B are arranged, and includes a display device shown in FIGS. 17 and 18 and an illumination device shown in FIG. 19. It can be applied to units such as vehicle headlights, billboards, indicator lights.

17 is an exploded perspective view illustrating a display device according to an exemplary embodiment.

Referring to FIG. 17, the display device 1000 according to the first exemplary embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member under the light guide plate 1041. 1022, an optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. A bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse the light provided from the light emitting module 1031 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 40 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 40 is disposed in the bottom cover 1011, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 includes a module substrate 1033 and a light emitting device package 200 according to the embodiment disclosed above, wherein the light emitting device package 200 is arrayed on the module substrate 1033 at predetermined intervals. Can be. When the light emitting device package 200 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the module substrate 1033 may be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device package 200 may be discharged to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting device packages 200 may be mounted on the module substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with an accommodating part 1012 having a box shape having an upper surface opened thereto, but is not limited thereto. The bottom cover 1011 may be combined with a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or non-metal material having good thermal conductivity, but is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by transmitting or blocking light provided from the light emitting module 1031. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. In addition, a protective sheet may be disposed on the display panel 1061, but the embodiment is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but the embodiment is not limited thereto.

18 is a cross-sectional view illustrating a display device according to an exemplary embodiment.

Referring to FIG. 18, the display device 1100 according to the second embodiment includes a bottom cover 1152, a module substrate 1120 on which the light emitting device package 200 disclosed above is arranged, an optical member 1154, and a display. A panel 1155.

The module substrate 1120 and the light emitting device package 200 may be defined as a light emitting module 1160. The bottom cover 1152, the at least one light emitting module 1160, and the optical member 1154 may be defined as a light unit (not shown).

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display panel 1155, and the brightness enhancement sheet reuses the lost light to improve the brightness. .

The optical member 1154 is disposed on the light emitting module 1160 and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1160.

19 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 19, the lighting apparatus according to the embodiment includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520.

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a module substrate 1532 and a light emitting device package 200 according to an embodiment mounted on the module substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The module substrate 1532 may be a circuit pattern printed on an insulator. For example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, and a ceramic PCB may be used. , FR-4 substrates, and the like.

In addition, the module substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white, silver, etc., in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the module substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

10, 10A, 10B: light emitting element
11: substrate
13: First conductive type semiconductor layer
15:
17: second conductivity type semiconductor layer
19: light emitting structure
20: current spreading layer
22, 24, 26: line
30: recessed area
32: transparent conductive layer
34, 40: first electrode
26, 42: second electrode
38: reflective layer
40: electrode
51: first protective layer
53: electrode layer
55: bonding layer
57: support member
59: second protective layer
62: Light extraction structure
65: electrode
101 groove

Claims

Active layer;
A first conductivity type semiconductor layer disposed under the active layer;
A second conductivity type semiconductor layer disposed on the active layer;
A transparent conductive layer disposed on the second conductive semiconductor layer; And
A current spreading layer disposed between the second conductive semiconductor layer and the transparent conductive layer,
The current spreading layer includes a plurality of lines spaced apart from each other.

The method of claim 1,
And the current spreading layer includes a recessed region formed between the lines.

3. The method of claim 2,
The transparent conductive layer includes a first region in contact with the second conductive semiconductor layer through the recess region and a second region in contact with an upper surface of the line.

The method of claim 3,
The thickness of the first region is a light emitting device of 110% to 200% of the thickness of the second region.

The method of claim 1,
The current spreading layer has a stripe shape in which the plurality of lines are arranged long in one direction.

The method of claim 1,
And the current spreading layer has a mesh shape in which the plurality of lines cross each other.

The method of claim 1,
The line has a width of 1 μm to 3 μm and a thickness of 5 nm to 1 μm.

The method of claim 1,
The distance between the lines is 7㎛ 100㎛ light emitting device.

The method of claim 1,
The ratio of the width of the line and the distance between the lines is 1: 3 to 1:40.

The method of claim 1,
Wherein the current spreading layer comprises at least one of a current spreading material, an ohmic contact material, and a reflective metal material.

The method of claim 1,
The current spreading layer includes one or a stack of one selected from the group consisting of Ag, Au, Pt, Ni, Pd, Cu, Ir, Mo, Re, Rh, Ru, Se, and Te.

The method of claim 1,
And a coupling layer disposed at an interface between the current spreading layer and the second conductive semiconductor layer, wherein the material of the current spreading layer and the second conductive semiconductor layer are a combination of materials.

The method of claim 1,
A first electrode on a portion of an upper surface of the first conductivity type semiconductor layer; And
The light emitting device further comprises a second electrode disposed on the transparent conductive layer.

The method of claim 13,
The light emitting device further comprises a reflective layer disposed between the transparent conductive layer and the second electrode.

The method of claim 1,
An electrode disposed under the first conductivity type semiconductor layer;
An electrode layer disposed on the transparent conductive layer; And
The light emitting device further comprises a protective layer disposed on the same layer as the current spreading layer.

16. The method of claim 15,
The transparent conductive layer has a function of an ohmic contact layer, the electrode layer has a function of a reflective layer.