KR20130066308A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- KR20130066308A KR20130066308A KR1020110133087A KR20110133087A KR20130066308A KR 20130066308 A KR20130066308 A KR 20130066308A KR 1020110133087 A KR1020110133087 A KR 1020110133087A KR 20110133087 A KR20110133087 A KR 20110133087A KR 20130066308 A KR20130066308 A KR 20130066308A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- substrate
- protrusions
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 230000003064 anti-oxidating effect Effects 0.000 claims description 15
- 239000003963 antioxidant agent Substances 0.000 claims description 12
- 230000003078 antioxidant effect Effects 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 115
- 239000004065 semiconductor Substances 0.000 description 66
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- -1 InGaN / InGaN Chemical compound 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
This embodiment relates to a light emitting device.
Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.
III-V nitride semiconductors (group III-V nitride semiconductors) have been spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.
Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .
The embodiment provides a light emitting device capable of preventing a decrease in conductivity of the light emitting structure due to oxygen diffusion since the oxygen component contained in the substrate is blocked from diffusing into the light emitting structure.
The light emitting device of the embodiment includes a substrate having a plurality of protrusions formed on an upper surface thereof; An oxidation prevention pattern formed between the plurality of protrusions on the substrate; A buffer layer formed on the substrate, the plurality of protrusions, and the antioxidant pattern; And a light emitting structure formed on the buffer layer, wherein an air gap is interposed between the plurality of protrusions on the substrate and between the antioxidant pattern and the buffer layer.
The substrate may include a metal oxide, and the metal oxide may include at least one of sapphire (Al 2 O 3 ) or ZnO.
The anti-oxidation pattern may include at least one of silicon nitride (Si 3 N 4 ) or boron nitride (BN), and the buffer layer may include aluminum nitride (AlN).
The plurality of protrusions may comprise a rounded outer surface. In this case, the plurality of protrusions may be hemispherical. The plurality of protrusions may include a planar outer surface, and the anti-oxidation pattern may have a thickness of, for example, 100 nm to 1000 nm.
The embodiment forms an anti-oxidation pattern between the protrusions on the upper portion of the patterned substrate, thereby preventing the oxygen component contained in the substrate from diffusing into the light emitting structure and oxidizing the light emitting structure, thereby protecting the conductivity of the light emitting structure. have.
1 is a sectional view of a light emitting device according to an embodiment.
2 is a flowchart for explaining a method of manufacturing a light emitting device according to the embodiment.
3A to 3F are cross-sectional views illustrating a process of manufacturing a light emitting device.
4 is a cross-sectional view of a light emitting device package according to an embodiment.
Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings.
In the description of this embodiment, when described as being formed on the "top" or "bottom" (on or under) of each element, the top (bottom) or bottom (bottom) (on or under) includes both elements that are in direct contact with each other or one or more other elements are formed indirectly between the two elements. do.
In addition, when expressed as "up" or "down" (on or under) it may include the meaning of the down direction as well as the up direction based on one element (element).
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.
1 is a cross-sectional view of a
The
The
First, the
The plurality of
In addition, in order to increase the extraction efficiency of the
In addition, the plurality of
As described above, when the plurality of
According to the embodiment, the
The
An
The refractive index of the
The
The first
The first conductivity
The
A conductive clad layer (not shown) may be formed between the
The conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the
The second conductivity-
As described above, according to the embodiment, the
Meanwhile, the
For example, the
Next, the
Although the
Hereinafter, a method of manufacturing the
2 is a flowchart illustrating a method of manufacturing the
First, as shown in FIG. 3A, a
Next, as illustrated in FIG. 3B, an
Next, as illustrated in FIG. 3C, the
Next, as shown in FIG. 3D, the
For example, in the growth temperature range of 1200 ° C to 1400 ° C, aluminum nitride (AlN) may be deposited on the
As such, when the
As described above, the
Next, as illustrated in FIG. 3E, the
The
Each of the first and second conductivity-
If the first and second conductivity
Each of the first and second conductivity-
The
Thereafter, the first
3A to 3F are merely exemplary manufacturing methods of the
Hereinafter, a light emitting device package including a
4 is a sectional view of a light emitting
As shown in FIG. 4, the light emitting
A cavity may be formed on an upper surface of the
The
The
The
For example, as shown in FIG. 4, the
On the other hand, the
A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package.
Yet another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp. .
Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
10: substrate 12: protrusion
20:
30: air gap 40: buffer layer
50: light emitting structure 52: first conductive semiconductor layer
54: active layer 56: second conductive semiconductor layer
60: first electrode layer 70: second electrode layer
100 light emitting
310:
332 and 334
Claims (9)
An oxidation prevention pattern formed between the plurality of protrusions on the substrate;
A buffer layer formed on the substrate, the plurality of protrusions, and the antioxidant pattern; And
It includes a light emitting structure formed on the buffer layer,
And an air gap interposed between the plurality of protrusions on the substrate and between the anti-oxidation pattern and the buffer layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110133087A KR20130066308A (en) | 2011-12-12 | 2011-12-12 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110133087A KR20130066308A (en) | 2011-12-12 | 2011-12-12 | Light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130066308A true KR20130066308A (en) | 2013-06-20 |
Family
ID=48862626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020110133087A KR20130066308A (en) | 2011-12-12 | 2011-12-12 | Light emitting device |
Country Status (1)
Country | Link |
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KR (1) | KR20130066308A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104576845A (en) * | 2014-12-16 | 2015-04-29 | 深圳市德上光电有限公司 | Producing method for graphical sapphire substrate |
CN105633222A (en) * | 2014-11-06 | 2016-06-01 | 展晶科技(深圳)有限公司 | Method for manufacturing vertical light-emitting diode |
KR20160123300A (en) * | 2014-02-17 | 2016-10-25 | 오스람 옵토 세미컨덕터스 게엠베하 | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
CN109103307A (en) * | 2018-08-17 | 2018-12-28 | 开发晶照明(厦门)有限公司 | Light-emitting component and its manufacturing method |
CN109346580A (en) * | 2018-08-28 | 2019-02-15 | 华灿光电(浙江)有限公司 | A kind of manufacturing method of LED epitaxial slice |
CN111682092A (en) * | 2020-05-18 | 2020-09-18 | 福建中晶科技有限公司 | Preparation method of graphical sapphire substrate |
-
2011
- 2011-12-12 KR KR1020110133087A patent/KR20130066308A/en not_active Application Discontinuation
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160123300A (en) * | 2014-02-17 | 2016-10-25 | 오스람 옵토 세미컨덕터스 게엠베하 | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
KR20210034113A (en) * | 2014-02-17 | 2021-03-29 | 오스람 옵토 세미컨덕터스 게엠베하 | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
US11005003B2 (en) | 2014-02-17 | 2021-05-11 | Osram Oled Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
KR20210118221A (en) * | 2014-02-17 | 2021-09-29 | 오스람 옵토 세미컨덕터스 게엠베하 | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
US11430907B2 (en) | 2014-02-17 | 2022-08-30 | Osram Oled Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
US11888083B2 (en) | 2014-02-17 | 2024-01-30 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
CN105633222A (en) * | 2014-11-06 | 2016-06-01 | 展晶科技(深圳)有限公司 | Method for manufacturing vertical light-emitting diode |
CN104576845A (en) * | 2014-12-16 | 2015-04-29 | 深圳市德上光电有限公司 | Producing method for graphical sapphire substrate |
CN109103307A (en) * | 2018-08-17 | 2018-12-28 | 开发晶照明(厦门)有限公司 | Light-emitting component and its manufacturing method |
US11038079B2 (en) | 2018-08-17 | 2021-06-15 | Kaistar Lighting (Xiamen) Co., Ltd. | Light-emitting device and manufacturing method thereof |
CN109346580A (en) * | 2018-08-28 | 2019-02-15 | 华灿光电(浙江)有限公司 | A kind of manufacturing method of LED epitaxial slice |
CN111682092A (en) * | 2020-05-18 | 2020-09-18 | 福建中晶科技有限公司 | Preparation method of graphical sapphire substrate |
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