CN109346580A - A kind of manufacturing method of LED epitaxial slice - Google Patents
A kind of manufacturing method of LED epitaxial slice Download PDFInfo
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- CN109346580A CN109346580A CN201810989598.XA CN201810989598A CN109346580A CN 109346580 A CN109346580 A CN 109346580A CN 201810989598 A CN201810989598 A CN 201810989598A CN 109346580 A CN109346580 A CN 109346580A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 78
- 239000000872 buffer Substances 0.000 claims abstract description 39
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 33
- 239000010980 sapphire Substances 0.000 claims abstract description 33
- 239000001257 hydrogen Substances 0.000 claims abstract description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 32
- 230000000737 periodic effect Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 49
- 230000012010 growth Effects 0.000 claims description 47
- 229910052757 nitrogen Inorganic materials 0.000 claims description 26
- 239000012159 carrier gas Substances 0.000 claims description 20
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 6
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical group [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- BLJHFCVPKWOHJX-UHFFFAOYSA-N ethylgallium Chemical compound CC[Ga] BLJHFCVPKWOHJX-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 abstract description 46
- 239000004065 semiconductor Substances 0.000 abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 3
- 239000007771 core particle Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of manufacturing methods of LED epitaxial slice, belong to technical field of semiconductors.The manufacturing method passes through the growing low temperature buffer layer in the periodic pattern of Sapphire Substrate and recessed portion；The reaction chamber temperature is increased, growing three-dimensional grown layer on the low temperature buffer layer on recessed portion；It keeps reaction chamber temperature constant, the hydrogen of a period of time is passed through to reaction chamber, gets rid of the partial 3-D grown layer on the low temperature buffer layer and recessed portion in periodic pattern.Then reaction chamber temperature is increased, the undoped GaN layer of high temperature merges in the periodic pattern, and is arranged with the periodic pattern interval, forms cavity.Air is filled in cavity, since the refractive index of air is smaller than the refractive index of Sapphire Substrate, the difference of the refractive index of air and epitaxial layer of gallium nitride is bigger, therefore the light from multiple quantum well layer is easier to generate total reflection at cavity, and from the front outgoing of light emitting diode, to improve the front light extraction efficiency of light emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of manufacturing method of LED epitaxial slice.
Background technique
Light emitting diode (Lighting Emitting Diode, abbreviation LED) is with small in size, the service life is long, response speed
Fastly, high reliability is widely used in multi-field electronic equipment.
Gallium nitride-based semiconductor material is the new generation of semiconductor material after silicon and GaAs based materials, referred to as third
For semiconductor material, it has wide band gap, and excellent physical property and chemical property have in optoelectronic areas and widely answer
With prospect and researching value.Gallium nitrate kind base semiconductor is gradually by vast attention in recent years.Gallium nitride based light emitting diode
Frequently with Sapphire Substrate.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
For the LED of positive assembling structure, the part light that multiple quantum well layer generates can be incident in Sapphire Substrate, sapphire lining
Bottom can absorb part light, reduce so as to cause the front light emission rate of LED.
Summary of the invention
The embodiment of the invention provides a kind of manufacturing method of LED epitaxial slice, the front that LED can be improved goes out
Light efficiency.The technical solution is as follows:
The embodiment of the invention provides a kind of manufacturing method of LED epitaxial slice, the manufacturing method includes:
One Sapphire Substrate is provided, the surface of the Sapphire Substrate is equipped with periodic pattern, the periodic pattern it
Between form recessed portion；
Carrier gas, nitrogen and the source Mo are passed through into reaction chamber, the growing low temperature in the periodic pattern and the recessed portion
Buffer layer, the low temperature buffer layer are GaN layer；
The reaction chamber temperature is increased, is passed through carrier gas, nitrogen and the source Mo to the reaction chamber, it is low on the recessed portion
Growing three-dimensional grown layer on warm buffer layer, the three dimensional growth layer are greater than described for the thickness of GaN layer and the three dimensional growth layer
Low temperature buffer layer；
It keeps the reaction chamber temperature constant, the hydrogen of a period of time is passed through to the reaction chamber, remove the periodicity
The partial 3-D grown layer on low temperature buffer layer and the recessed portion on figure；
The reaction chamber temperature is increased, carrier gas, nitrogen and the source Mo are passed through to the reaction chamber, on the three dimensional growth layer
Grow the undoped GaN layer of high temperature, the undoped GaN layer of high temperature merges in the periodic pattern, and with the week
The setting of phase property pattern spacing, forms cavity；
It is passed through carrier gas, nitrogen, the source Mo and N type dopant to the reaction chamber, it is raw in the undoped GaN layer of the high temperature
Long N-type layer；
It is passed through carrier gas, nitrogen and the source Mo to the reaction chamber, grows multiple quantum well layer in the N-type layer；
Carrier gas, nitrogen, the source Mo and P-type dopant, the growing P-type on the multiple quantum well layer are passed through into the reaction chamber
Layer.
Further, when growing the three dimensional growth layer, the temperature of reaction chamber is controlled at 1000~1070 DEG C.
Further, the hydrogen that a period of time is passed through to the reaction chamber removes low in the periodic pattern
Partial 3-D grown layer on warm buffer layer and the recessed portion, comprising:
The hydrogen of 60~150L/min is passed through to the reaction chamber.
It further, is 1~3min of hydrogen to the time that the reaction chamber is passed through hydrogen.
Further, when being passed through hydrogen to the reaction chamber, the temperature of the reaction chamber is controlled at 1000~1070 DEG C.
Further, when being passed through hydrogen to the reaction chamber, the pressure of the reaction chamber is controlled in 100~500torr.
Further, when the growth undoped GaN layer of high temperature, the temperature of reaction chamber is controlled at 1040~1080 DEG C.
Further, the low temperature buffer layer with a thickness of 20~30nm.
Further, the three dimensional growth layer with a thickness of 0.7~1.1um.
Further, the carrier gas is the mixed gas of high-purity hydrogen or high pure nitrogen or high-purity hydrogen and high pure nitrogen,
The source Mo is one or more of trimethyl gallium, trimethyl indium, trimethyl aluminium, triethyl-gallium.
Technical solution provided in an embodiment of the present invention has the benefit that
By keeping reaction chamber temperature constant, a period of time being passed through into reaction chamber after three dimensional growth layer has been grown
Hydrogen, reaction chamber temperature is higher at this time, and GaN is easily decomposed at high temperature, and low temperature buffer layer and three dimensional growth layer are GaN layer,
Therefore low temperature buffer layer and three dimensional growth layer can decompose, while hydrogen can take GaN decomposition product out of reaction chamber.Again due to three-dimensional
The thickness of grown layer is greater than the thickness of low temperature buffer layer, therefore is passed through the hydrogen of a period of time, can get rid of periodic pattern
On low temperature buffer layer and recessed portion on partial 3-D grown layer, guarantee that the low temperature in the Sapphire Substrate periodic pattern is slow
Rush after layer decomposed, the partial 3-D grown layer on recessed portion is not decomposed yet, in order to it is subsequent on three dimensional growth layer it is raw
Long undoped GaN layer.Further, reaction chamber temperature is increased, the undoped GaN layer of high temperature is grown on three dimensional growth layer,
Since the growth temperature of the undoped GaN layer of high temperature is higher, the periodic pattern of sapphire substrate surface can not be grown directly upon
On, therefore, it will form cavity between the undoped GaN layer of high temperature and Sapphire Substrate.Air, multiple quantum wells are filled in cavity
The part light that layer issues is incident to before Sapphire Substrate, can be by cavity, since the refractive index of air is than Sapphire Substrate
Refractive index is small, and the difference of the refractive index of air and epitaxial layer of gallium nitride is bigger, therefore the light from multiple quantum well layer is easier
Total reflection is generated at cavity, and from the front outgoing of light emitting diode, to improve the front light extraction efficiency of light emitting diode.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of method flow diagram of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the LED epitaxial slice after step 102 executes；
Fig. 3 is the structural schematic diagram of the LED epitaxial slice after step 103 executes；
Fig. 4 is the structural schematic diagram of the LED epitaxial slice after step 104 executes；
Fig. 5 is the structural schematic diagram of the LED epitaxial slice after step 105 executes.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of manufacturing method of LED epitaxial slice, Fig. 1 is that the embodiment of the present invention mentions
The method flow diagram of the manufacturing method of a kind of LED epitaxial slice supplied, as shown in Figure 1, the manufacturing method includes:
Step 101 provides a Sapphire Substrate.
In the present embodiment, the surface of Sapphire Substrate is equipped with periodic pattern, forms recessed portion between periodic pattern.
Specifically, step 101 further includes；
By Sapphire Substrate temperature be 1050 DEG C, pure hydrogen atmosphere to Sapphire Substrate carry out annealing 5~
Then Sapphire Substrate is carried out nitrogen treatment by 10min.
In the present embodiment, Veeco K465i or C4 MOCVD (Metal Organic Chemical can be used
Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) equipment realize LED epitaxial slice manufacture.It adopts
With high-purity H2(hydrogen) or high-purity N2(nitrogen) or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N.
The source Mo is trimethyl gallium (TMGa), trimethyl gallium (TMGa), trimethyl aluminium (TMAl), one or more in triethyl-gallium (TEGa)
It is a.Wherein trimethyl gallium (TMGa) and triethyl-gallium (TEGa) are used as gallium source, and trimethyl indium (TMIn) is used as indium source, trimethyl aluminium
(TMAl) it is used as silicon source.Silane (SiH4) is used as N type dopant, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.Chamber pressure
For 100-600torr.
Step 102, growing low temperature buffer layer.
Specifically, the temperature of reaction chamber is dropped to 540 DEG C, pressure is controlled in 50~200torr, is passed through load to reaction chamber
Gas, ammonia and trimethyl gallium, the GaN layer that 20~30nm is grown in the periodic pattern of sapphire substrate surface and recessed portion are low
Warm buffer layer.Under 540 DEG C of low temperature environment, be conducive to low temperature GaN buffer growth on a sapphire substrate.
Fig. 2 is the structural schematic diagram of the LED epitaxial slice after step 102 executes, as shown in Fig. 2, low temperature buffer
Layer 2 is located on the periodic pattern 1a and recessed portion 1b on the surface of Sapphire Substrate 1.
In the present embodiment, the periodic pattern 1a in Sapphire Substrate 1 is cone.
Step 103, growing three-dimensional grown layer.
In the present embodiment, three dimensional growth layer is GaN layer.
Specifically, the temperature of reaction chamber is increased to 1000~1070 DEG C, pressure is controlled in 100~500torr, to reaction
Room is passed through carrier gas, ammonia and trimethyl gallium, and the three dimensional growth layer of 0.7~1.1um is grown on the low temperature buffer layer on recessed portion.
In the present embodiment, three dimensional growth layer with a thickness of 0.7~1.11um, low temperature buffer layer is 20~30nm.It is three-dimensional
The thickness of grown layer is far longer than low temperature buffer layer, it is ensured that the low temperature buffer layer in Sapphire Substrate periodic pattern decomposes
After complete, the partial 3-D grown layer on recessed portion is not decomposed yet, in order to the growth of subsequent undoped GaN layer.
Fig. 3 is the structural schematic diagram of the LED epitaxial slice after step 103 executes, as shown in figure 3, three dimensional growth
Layer 3 is located on the low temperature buffer layer 2 on recessed portion 1b.
The partial 3-D grown layer on low temperature buffer layer and recessed portion in step 104, removal periodic pattern.
Specifically, keep reaction chamber temperature constant, the pressure for controlling reaction chamber is 100~500torr, is passed through to reaction chamber
The hydrogen of a period of time removes the partial 3-D grown layer on the low temperature buffer layer and recessed portion in periodic pattern.
Wherein, keeping reaction chamber temperature is 1000~1070 DEG C constant, makes to keep high temperature in reaction chamber, high temperature is conducive to
The decomposition of GaN layer.
In the present embodiment, step 104 includes:
1~3min of hydrogen of 60~150L/min is passed through to reaction chamber.By the hydrogen for being passed through 1~3min under high temperature environment
Gas, it is ensured that the low temperature GaN buffer on the figure of Sapphire Substrate can be decomposed.It is passed through 60~150L/min simultaneously
Hydrogen, can be used as carrier gas, take the decomposition product of GaN out of reaction chamber.If being passed through the overlong time of hydrogen, three-dimensional life will lead to
Long layer is decomposed excessively, reduces the crystal quality of three dimensional growth layer, to influence the growth of epitaxial structure.If being passed through hydrogen
Time is too short, and will lead to the low temperature buffer layer on the figure of Sapphire Substrate can not all decompose, and influences the generation in cavity.
Fig. 4 is the structural schematic diagram of the LED epitaxial slice after step 104 executes, as shown in figure 4, blue at this time precious
The partial 3-D grown layer 3 on low temperature buffer layer 2 and recessed portion 1b on the periodic pattern 1a at stone lining bottom 1 is decomposed.
Step 105, the growth undoped GaN layer of high temperature.
Specifically, the temperature of reaction chamber is increased to 1040~1080 DEG C, pressure is controlled in 100~300torr, to reaction
Room is passed through carrier gas, nitrogen and trimethyl gallium, and growth thickness is the undoped GaN layer of high temperature of 1.5um on three dimensional growth layer.
Fig. 5 is the structural schematic diagram of the LED epitaxial slice after step 105 executes, as shown in figure 5, due to high temperature
The growth temperature of undoped GaN layer 4 is higher, and the lattice of GaN layer and Sapphire Substrate 1 mismatches, therefore high temperature is undoped
GaN layer 4 will not be grown on the periodic pattern 1a of Sapphire Substrate 1.The undoped GaN layer of high temperature 4 is in periodic pattern
Merge on 1a, and be arranged with the interval periodic pattern 1a, forms cavity 4a.
Step 106, growth N-type layer.
By the temperature control of reaction chamber at 1040~1070 DEG C, pressure is controlled in 100~300torr, is passed through to reaction chamber
Carrier gas, carrier gas, nitrogen, trimethyl gallium and N type dopant, growth thickness mixes Si's for 2um in the undoped GaN layer of high temperature
GaN layer.
In the present embodiment, after executing the step 105, which can also include:
Step 107, growth multiple quantum well layer.
In the present embodiment, multiple quantum well layer includes the InGaN well layer and GaN barrier layer of multiple period alternating growths.
Specifically, step 107 includes:
By the temperature control of reaction chamber at 730~830 DEG C, pressure is controlled in 100~400torr, is passed through load to reaction chamber
Gas, nitrogen, triethyl-gallium and trimethyl indium, growth thickness are the InGaN well layer of 2.5nm；
By the temperature control of reaction chamber at 850~930 DEG C, pressure is controlled in 100~400torr, is passed through load to reaction chamber
Gas, nitrogen and triethyl-gallium, growth thickness are the GaN barrier layer of 15nm.
In the present embodiment, it can also carry out step 108 after executing the step 107.
Step 108, growth electronic barrier layer.
In the present embodiment, electronic barrier layer is the AlGaN layer for mixing Mg.
Specifically, step 108 includes:
By the temperature control of reaction chamber at 900~1000 DEG C, pressure is controlled in 50~200torr, is passed through load to reaction chamber
Gas, nitrogen, triethyl-gallium, trimethyl indium and P-type dopant, growth thickness is the electronic blocking of 80nm on multiple quantum well layer
Layer.
Step 109, growing P-type layer.
In the present embodiment, P-type layer is to mix the GaN layer of Mg.
By the temperature control of reaction chamber at 870~970 DEG C, pressure is controlled in 100~500torr, is passed through load to reaction chamber
Gas, nitrogen, triethyl-gallium and P-type dopant, growth thickness is the p-type GaN layer of 15nm on electronic barrier layer.
In the present embodiment, after executing the step 109, it can also carry out step 110.
Step 110, growing P-type contact layer.
In the present embodiment, p-type contact layer is the GaN layer of heavily doped Mg.
Specifically, step 110 includes:
By the temperature control of reaction chamber at 870~970 DEG C, pressure is controlled in 100~500torr, is passed through load to reaction chamber
Gas, nitrogen, triethyl-gallium and P-type dopant, growth thickness is the p-type contact layer of 15nm in P-type layer.
After above-mentioned steps completion, the temperature of reaction chamber is down to 600~850 DEG C, is carried out at annealing in nitrogen atmosphere
5~15min is managed, room temperature is then gradually decreased to, terminates the epitaxial growth of light emitting diode.
First sample and the second sample are plated into N-type electrode and P-type electrode under identical process conditions, and will be after processing
The first sample and the second sample grinding and cutting at 245*619 μm2Crystal grain, wherein the first sample is using traditional manufacturer
What method obtained, the second sample is manufactured using the manufacturing method of embodiment one.
Chosen respectively in the first sample and the second sample emission wavelength be 451~452nm, 452~453nm, 453~
The core particles of 454nm test three kinds of wave bands from the first sample and the second sample respectively under conditions of driving current 120mA
The light emission luminance of core particles.
The results show that the light emission luminance for the core particles that the emission wavelength of the first sample is 451~452nm is 199.4mW, second
The light emission luminance for the core particles that the emission wavelength of sample is 451~452nm is 203.5mW.The emission wavelength of first sample be 452~
The light emission luminance of the core particles of 453nm is 199.4mW, and the emission wavelength of the second sample is the light emission luminance of the core particles of 452~453nm
For 203.6mW.The light emission luminance for the core particles that the emission wavelength of first sample is 452~453nm is 199.3mW, the second sample
The light emission luminance for the core particles that emission wavelength is 452~453nm is 203.5mW.
Further, under the conditions of same process, the crystal grain of crystal grain and the second sample to the first sample is packaged,
Driving current tests the luminance of the core particles of three kinds of wave bands from the first sample and the second sample respectively under conditions of being 120mA
Degree.
The results show that the light emission luminance for the core particles that the emission wavelength of the first sample is 451~452nm is 192.8mW, second
The light emission luminance for the core particles that the emission wavelength of sample is 451~452nm is 196.5mW.Light emission luminance improves 1.92%.First
The light emission luminance for the core particles that the emission wavelength of sample is 452~453nm is 192.1mW, the emission wavelength of the second sample is 452~
The light emission luminance of the core particles of 453nm is 196mW, and light emission luminance improves 2.03%.The emission wavelength of first sample be 452~
The light emission luminance of the core particles of 453nm is 190.6mW, and the emission wavelength of the second sample is the light emission luminance of the core particles of 452~453nm
For 194.5mW, light emission luminance improves 2.05%.
It follows that the light emission luminance of the light emitting diode manufactured using manufacturing method provided in an embodiment of the present invention
Higher, illumination effect is more preferable.
The embodiment of the present invention is led to by keeping reaction chamber temperature constant after three dimensional growth layer has been grown into reaction chamber
Enter the hydrogen of a period of time, reaction chamber temperature is higher at this time, and GaN is easily decomposed at high temperature, and low temperature buffer layer and three dimensional growth
Layer is GaN layer, therefore low temperature buffer layer and three dimensional growth layer can decompose, while GaN decomposition product can be taken out of reaction by hydrogen
Chamber.Again since the thickness of three dimensional growth layer is greater than the thickness of low temperature buffer layer, it is passed through the hydrogen of a period of time, can be removed
Fall the partial 3-D grown layer on the low temperature buffer layer and recessed portion in periodic pattern, guarantees periodically to scheme when Sapphire Substrate
After low temperature buffer layer in shape has decomposed, the partial 3-D grown layer on recessed portion is not decomposed yet, in order to subsequent three
Undoped GaN layer is grown on dimension grown layer.Further, reaction chamber temperature is increased, grows high temperature not on three dimensional growth layer
The GaN layer of doping can not be grown directly upon sapphire substrate surface since the growth temperature of the undoped GaN layer of high temperature is higher
Periodic pattern on, therefore, will form cavity between the undoped GaN layer of high temperature and Sapphire Substrate.It is filled in cavity
Air, the part light that multiple quantum well layer issues are incident to before Sapphire Substrate, can be by cavity, due to the refractive index ratio of air
The refractive index of Sapphire Substrate is small, and the difference of the refractive index of air and epitaxial layer of gallium nitride is bigger, therefore comes from multiple quantum well layer
Light be easier to generate total reflection cavity at, and be emitted from the positive of light emitting diode, to improve light emitting diode just
Face light extraction efficiency.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes:
A Sapphire Substrate is provided, the surface of the Sapphire Substrate is equipped with periodic pattern, shape between the periodic pattern
At recessed portion；
Carrier gas, nitrogen and the source Mo are passed through into reaction chamber, growing low temperature buffers in the periodic pattern and the recessed portion
Layer, the low temperature buffer layer are GaN layer；
The reaction chamber temperature is increased, is passed through carrier gas, nitrogen and the source Mo to the reaction chamber, the low temperature on the recessed portion is slow
Growing three-dimensional grown layer on layer is rushed, the three dimensional growth layer is greater than the low temperature for the thickness of GaN layer and the three dimensional growth layer
Buffer layer；
It keeps the reaction chamber temperature constant, the hydrogen of a period of time is passed through to the reaction chamber, remove the periodic pattern
On low temperature buffer layer and the recessed portion on partial 3-D grown layer；
The reaction chamber temperature is increased, carrier gas, nitrogen and the source Mo is passed through to the reaction chamber, is grown on the three dimensional growth layer
The undoped GaN layer of high temperature, the undoped GaN layer of high temperature merge in the periodic pattern, and with the periodicity
Pattern spacing setting, forms cavity；
It is passed through carrier gas, nitrogen, the source Mo and N type dopant to the reaction chamber, grows N in the undoped GaN layer of the high temperature
Type layer；
It is passed through carrier gas, nitrogen and the source Mo to the reaction chamber, grows multiple quantum well layer in the N-type layer；
Carrier gas, nitrogen, the source Mo and P-type dopant are passed through into the reaction chamber, the growing P-type layer on the multiple quantum well layer.
2. the manufacturing method according to claim 1, which is characterized in that when growing the three dimensional growth layer, the temperature of reaction chamber
Degree control is at 1000~1070 DEG C.
3. the manufacturing method according to claim 1, which is characterized in that the hydrogen for being passed through a period of time to the reaction chamber
Gas removes the partial 3-D grown layer on the low temperature buffer layer and the recessed portion in the periodic pattern, comprising:
The hydrogen of 60~150L/min is passed through to the reaction chamber.
4. manufacturing method according to claim 3, which is characterized in that the time for being passed through hydrogen to the reaction chamber is hydrogen
1~3min.
5. the manufacturing method according to claim 1, which is characterized in that when being passed through hydrogen to the reaction chamber, the reaction
The temperature of room is controlled at 1000~1070 DEG C.
6. the manufacturing method according to claim 1, which is characterized in that when being passed through hydrogen to the reaction chamber, the reaction
The pressure of room is controlled in 100~500torr.
7. the manufacturing method according to claim 1, which is characterized in that when the growth undoped GaN layer of high temperature, reaction chamber
Temperature is controlled at 1040~1080 DEG C.
8. the manufacturing method according to claim 1, which is characterized in that the low temperature buffer layer with a thickness of 20~30nm.
9. the manufacturing method according to claim 1, which is characterized in that the three dimensional growth layer with a thickness of 0.7~
1.1um。
10. described in any item manufacturing methods according to claim 1~9, which is characterized in that the carrier gas is high-purity hydrogen or height
The mixed gas of pure nitrogen gas or high-purity hydrogen and high pure nitrogen, the source Mo are trimethyl gallium, trimethyl indium, trimethyl aluminium, three
One or more of ethyl gallium.
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| CN116314490A (en) * | 2023-05-10 | 2023-06-23 | 季华实验室 | Micro LED display chip, preparation method and device |
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