KR20110080683A - Method for transparent conducting oxide thin film - Google Patents
Method for transparent conducting oxide thin film Download PDFInfo
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- KR20110080683A KR20110080683A KR1020100001025A KR20100001025A KR20110080683A KR 20110080683 A KR20110080683 A KR 20110080683A KR 1020100001025 A KR1020100001025 A KR 1020100001025A KR 20100001025 A KR20100001025 A KR 20100001025A KR 20110080683 A KR20110080683 A KR 20110080683A
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- thin film
- zno
- film
- transparent conductive
- based thin
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- 239000010409 thin film Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910007470 ZnO—Al2O3 Inorganic materials 0.000 claims description 4
- 229910007674 ZnO—Ga2O3 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 114
- 239000011787 zinc oxide Substances 0.000 description 57
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 34
- 239000007789 gas Substances 0.000 description 23
- 229910052786 argon Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 229920000620 organic polymer Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910007570 Zn-Al Inorganic materials 0.000 description 6
- 229920000307 polymer substrate Polymers 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920008347 Cellulose acetate propionate Polymers 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
The present invention is a transparent conductive coating of a ZnO-based thin film / Au thin film / ZnO-based thin film in sequence
Film manufacturing, inexpensive compared to conventional ITO thin film, heat treatment process
Even without the light transmittance and surface electrical resistance is excellent.
Description
The present invention, a transparent conductive film containing an organic polymer film base material and its manufacture
The transparent conductive film of the present invention is, for example, for a touch panel.
Transparent electrodes, plasma display panels (PDP), liquid crystal display (LCD) devices,
Displays such as light emitting diode devices (LEDs) and organic light emitting diodes (OLEDs);
It can be used as a solar cell electrode or for antistatic or electromagnetic wave blocking
Used.
Recently, a touch panel and a flexible display,
With the rapid increase in flexible photovoltaic cells
Demand for Transparent Electrodes Increases Significantly Using Polymer Substrate
Doing. Currently, ITO (Indium Tin Oxide) is used for the transparent electrode
But the price is constantly rising due to the depletion of ITO.
There is an urgent need to develop materials to replace them.
Translucent electroconductive film has a high light transmittance to visible light and an electrical conductivity
It is a high thin film and usually has a transmittance of over 80% in the visible region.
It has a resistivity of 1x10 -4 dBm or less.
The first transparent conductive thin film was a Cd thin film deposited by Badeker as sputter in 1907.
CdO made by thermal oxidation is transparent and has conductivity
Tin Oxide (TO), Indium Oxide (IO), Antimony doped Tin since reported
Oxide (ATO), Zinc Oxide (ZO), Indium doped Zinc oxide (IZO), Indium Tin
Many light-transmitting oxides such as oxide (ITO) have been studied. Currently ITO
Thin film has been the most researched and industrialized, but the cost of the material
There is still room for improvement with the rise and improved performance of alternative materials.
The ZnO-based conductive film for transparent electrode uses an AZO thin film doped with Al and Ga doped
GZO thin film is the mainstream and the film formation method is sputtering method, pulse laser
Deposition (PLD), ion beam deposition, etc. are being applied.
GZO thin film is the mainstream and the film formation method is sputtering method, pulse laser
Deposition (PLD), ion beam deposition, etc. are being applied.
However, the polyethylene polyether sulfone is formed at a temperature of about 150 ° C. during deposition.
Poly Ether Sulfone (PES) or polyethylene terephthalate
Polymer substrates such as Poly Ethylene Terephthalte (PET)
It is difficult to deposit, and generally the surface resistance is over 200Ω / ㎠ and the light transmittance
80% or so (based on 550nm wavelength band) and ITO, a representative transparent electrode material,
It was limited to replace.
In the past, it has been widely used industrially as a material for thin films and coatings.
The frequent use was by far the glass substrate. Current display manufacturing process
Endure high temperatures during the process of film formation at high temperatures
However, due to the nature of glass, high Tg has the advantage of minimizing thermal deformation.
Because it has.
Meanwhile, the direction of development of next-generation displays goes beyond flat displays.
To complete and commercialize the technology for implementing flexible displays
It is going on. Flexible displays replace plastic substrates
Thinner, lighter, and thinner than conventional flat panel displays
Improve durability by reducing damage, reduce manufacturing cost by continuous roll process
Many researches are being conducted because cost reduction is possible compared to glass substrate.
have. But still plastic substrates are strong, stable against high heat
Weak mechanical strength against impact, difficulty of reproducibility, higher than glass
Large area and fine graphic display due to shrinkage and high electrical resistance
There are many disadvantages to apply. Therefore, overcoming these problems
In order to realize flexible display, development of low temperature manufacturing process of transparent electrode
Desperately needed
The present invention uses the ZnO-based thin film / Au thin film / ZnO-based thin film without the surface resistance and heat treatment
It is an object to provide a transparent conductive film excellent in light transmittance.
In addition, the ZnO-based thin film / Au thin film / ZnO-based thin film coated polymer (Polymer)
It is an object to provide a transparent conductive film of a material.
In order to solve the above problems, the coating is applied at low temperature without heat treatment.
ZnO-based thin film / Au thin film / ZnO-based thin film with excellent light transmittance and surface resistance
It relates to a manufacturing method.
The present invention, at least one of Ga and Al on the organic polymer film substrate
Doped ZnO-based ZnO-based thin film / Au thin film / ZnO-based thin film is formed
It relates to a transparent conductive film characterized by.
In the transparent conductive film, the ZnO-based thin film is GZO which is ZnO doped with Ga
It is preferable that it is a thin film. In addition, the ZnO-based thin film is AZO which is ZnO doped with Al.
It is preferable that it is a thin film.
The said transparent conductive film WHEREIN: The thickness of a ZnO type thin film is 20 nm-80 nm.
desirable.
In the above transparent conductive film, the thickness of the GZO thin film is 20 nm to 130 nm.
desirable.
Moreover, this invention is a manufacturing method of the said transparent conductive film,
ZnO phosphorus doped with at least one of Ga and Al on an organic polymer film substrate
Characterized by having a process of forming a ZnO-based thin film / Au thin film / ZnO-based thin film
It relates to a method for producing a transparent conductive film.
In the method for producing a transparent conductive film, the step of forming a ZnO-based thin film
The evacuation apparatus is evacuated up to 1.5 x 10 -4 Pa or less.
In the method for producing the transparent conductive film, the ZnO-based thin film is R.F magnetron
It is preferable to form by sputter film-forming method. In addition, the Au thin film is a metal target
By Au D-C magnetron sputter deposition under argon gas atmosphere
Can be formed.
In the method for producing the transparent conductive film, the ZnO-based thin film is an AZO thin film
In this case, the AZO thin film is formed of argon gas from ZnO-Al2O3 which is an oxide target.
Under the argon gas atmosphere to make a main gas, in a magnetron sputter deposition method
It can form by.
In the method for producing the transparent conductive film, the ZnO-based thin film is an AZO thin film
In this case, the AZO thin film contains oxygen from Zn-Al which is a metal target.
Under an argon gas atmosphere, by reactive magnetron sputter deposition
Can be formed. The amount of oxygen introduced in the argon gas atmosphere is
It can be controlled using MFC (mass flow controller).
In the method for producing the transparent conductive film, the ZnO-based thin film is a GZO thin film
In this case, the GZO thin film is formed of argon gas from ZnO-Ga2O3 which is an oxide target.
Under the argon gas atmosphere to be a main gas, by the magnetron sputter deposition method
Can form.
In the method for producing the transparent conductive film, the ZnO-based thin film is a GZO thin film
In this case, the GZO thin film contains oxygen from Zn-Ga which is a metal target.
Under an argon gas atmosphere, by reactive magnetron sputter deposition
Can be formed. The amount of oxygen introduced in the argon gas atmosphere is
It can be controlled using MFC (mass flow controller).
According to the present invention, manufacturing a low-cost transparent electrode in place of conventional expensive ITO
550nm visible light with specific resistance of 10 -5 or less without heat treatment
The production of excellent transparent conductive films with a light transmittance of more than 85% in the region
It is possible. The transparent electrode thus manufactured is made of a transparent electrode using ITO
It is possible to substitute for display, solar cell, touch panel, E paper, etc.
Can be used.
1: organic polymer substrate (PET) 2: ZnO-based thin film
3: Au thin film 4: ZnO based thin film
1 illustrates a ZnO-based transparent conductive film according to Example 1 of the present invention.
Sectional structure diagram.
2 is an X-ray diffraction analysis of the ZnO-based transparent conductive film according to Example 1
Graph shown.
3 is visible light of the ZnO-based transparent conductive film according to Example 1 of the present invention
Transmittance Spectrum According to Transmittance Wavelength
4 is a charge mobility of the ZnO-based transparent conductive film according to Example 1 of the present invention and
Graph showing change in charge concentration
5 is a thin film thickness of the ZnO-based transparent conductive film according to Example 1 of the present invention
Measurement graph
The present invention and operational advantages of the present invention and achieved by the practice of the present invention
To fully understand the purpose of illustrating the preferred embodiment of the present invention
Reference should be made to the accompanying drawings and to the contents described in the accompanying drawings.
Hereinafter, with reference to the accompanying drawings illustrating a preferred embodiment of the present invention,
The present invention will be described in detail. However, in the description of the present invention already known
Descriptions of functions or configurations are provided to clarify the gist of the present invention.
It will be omitted. In addition, this invention is not limited to these Examples.
(Organic Polymer Film)
1 is a schematic cross-sectional view showing an example of the transparent conductive film of the present invention,
On one surface of the organic polymer
In addition, a ZnO-based
As an organic polymer film base material used for this invention, transparency, heat resistance, surface
Films excellent in smoothness are preferably used. For example, polymer
(Polymer) polyether sulfone, polyacrylate, polyetherimide,
Polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide,
Polyarylate, polyimide, polycarbonate, cellulose triacetate
And plastic materials including cellulose acetate propionate and the like
.
Moreover, before forming a ZnO type thin film on an organic polymer film base material
Depending on the type of film, inert gas such as argon gas and nitrogen gas
Surface modification process (pretreatment), such as a plasma process, can also be performed in atmosphere.
have. In addition, the organic polymer film base material contains
A ZnO based thin film can be formed through an undercoat film such as a thin film.
As a thin film, a ZZO-doped ZnO thin film and an AZO Z-doped Al
Thin film is mentioned. Moreover, the ZnO type thin film which is ZnO doped with Ga and Al is mentioned.
have. As a film formation method of a ZnO type thin film, the magnetron sputtering method and a pulse laser
Vacuum deposition methods such as deposition (PLD) and reactive plasma deposition (RPD) methods are employed.
All. In consideration of productivity and characteristics, the magnetron sputtering method
It is common.
The formation of the ZnO based thin film by the magnetron sputter deposition method is performed in two ways.
It can be adopted. The first is from an oxide target, argon gas to main gas
It is a method of sputter film-forming in argon gas atmosphere.
As an oxide target, ZnO-Ga2O3 sintered compact, ZnO-Al2O3 sintered compact etc. are mentioned, for example.
Can be mentioned. Argon gas atmosphere is argon gas only, or a small amount of hydrogen
Argon gas mixed with gas is used. In ZnO-Ga2O3 Sintered Body
Although the ratio of Ga2O3 of is suitably determined, it is usually
In view of lowering the specific resistance of the film thus obtained, it is usually about 1 to 8 WT%,
Preferably it is 2-8 WT%. ZnO-Al2O3 Sintered Body
Although the ratio of Al2O3 is suitably determined, in the said sintered compact normally,
In general, about 0.5 to 6% by weight in terms of reducing the specific resistance of the obtained film,
Preferably it is 1-6 weight%.
The second is from a metal target, under argon gas atmosphere containing oxygen
It is a reactive magnetron sputter deposition method which performs sputter film deposition.
As a metal target, Zn-Ga, Zn-Al etc. are mentioned, for example. Metal target
Zn-Ga is not alloyed and Ga is uniformly dispersed in Zn metal.
You can think of it as a state.
The ratio of Ga in Zn-Ga is appropriately determined, but usually
From the viewpoint of low resistivity similarly to the oxide target in Zn-Ga,
Usually, it is about 0.4-4 WT%, Preferably it is 1.2-3.8 WT%.
As the metal target, Zn-Al, a Zn-Al alloy is used. Al in Zn-Al Alloy
The ratio is appropriately determined, but usually in terms of Zn-Al and the oxide target
Similarly, from the point of low specific resistance, wind is usually about 0.2 to 5 WT%.
It is 0.5-2.8 WT% directly.
As shown in Fig. 1, the transparent
ZnO-based thin film formed in contact with the surface of the film substrate (1)
ZnO based on ZnO based thin film layer (2) Au thin film layer (3) and Au thin film layer (3)
The
First, PET substrate (thickness: 118 μm), a kind of organic polymer film, was used as a substrate.
UV irradiation, electron beam irradiation, corona discharge, plasma discharge, organic solvent cleaning
Remove foreign substances on the surface and pre-treatment to improve thin film deposition.
When the thin film was deposited, the distance between the ZnO-based target and the substrate was fixed to 10 cm.
The substrate was rotated at a speed of 6 rpm for the thickness uniformity of the thin film.
Argon (Ar) to remove oxide layers and impurities that may be present on the target surface
AC (alternating current) 75W using gas
Pre-sputtering was performed for 15 minutes at (current density; 3.5 W / cm 2 ). after,
Ar gas flow rate is 38 sccm and ZnO-based thin film deposition process pressure is 1.0 × 10 -3
kept at torr. 14 nm / min deposition rate first lower layer
A ZnO based thin film is deposited to a thickness of 46 nm.
On the ZnO-based thin film formed by the above method, the Au thin film had an Ar gas flow rate of 5 sccm.
Maintains 1.0 × 10 -3 torr process pressure and direct current (DC)
120 W (current density; 2.6 W / cm 2 ) at 5 nm thickness with 20 nm / min deposition rate
Deposition appropriately. Thereafter, the same method as for depositing a lower layer ZnO-based thin film
The upper layer ZnO-based thin film is deposited under the conditions.
As shown in the above ZnO thin film process conditions,
46nm deposition to form a multilayer thin film structure of ZnO-based thin film / Au / ZnO-based thin film / PET (substrate)
To make.
Table 1 shows an organic polymer film substrate on which a transparent conductive film is deposited as a ZnO-based thin film.
Surface resistance and visible light transmittance are shown.
(Nm)
(550nm standard)
As shown in Table 1, low specific resistance is obtained even without heat treatment, and light transmittance is shown.
A transparent conductive film exhibiting properties of more than 85% and excellent thermal stability
I can produce it.
Claims (4)
Manufacturing method;
The ZnO-based thin film is a ZnO-doped GZO thin film and Al doped
ZnO AZO thin film, which is formed on a ZnO based thin film formed by sputtering
Au was deposited by sputtering, and a ZnO-based thin film was deposited thereon by sputtering.
The multilayer transparent conductive film characterized by depositing.
The Au deposition thickness is 3 ~ 15 nm ZnO-based thin film / Au thin film /
Multilayer transparent conductive film coated with a ZnO-based thin film.
The thickness of the AZO-based thin film is characterized in that each 10 ~ 110 nm
ZnO-based thin film / Au thin film / ZnO-based transparent conductive film is a multi-layer coating.
The ratio of Al2O3 in a ZnO-Al2O3 sintered compact is about 0.5-6 weight%,
In the ZnO-Ga2O3 sintered body of GZO, the ratio of Ga2O3 is 1 to 8% by weight.
Thin coated transparent conductive film, characterized in that the combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100001025A KR20110080683A (en) | 2010-01-06 | 2010-01-06 | Method for transparent conducting oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100001025A KR20110080683A (en) | 2010-01-06 | 2010-01-06 | Method for transparent conducting oxide thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110080683A true KR20110080683A (en) | 2011-07-13 |
Family
ID=44919541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100001025A KR20110080683A (en) | 2010-01-06 | 2010-01-06 | Method for transparent conducting oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20110080683A (en) |
-
2010
- 2010-01-06 KR KR1020100001025A patent/KR20110080683A/en not_active Application Discontinuation
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