KR20110006932A - Apparatus for fixing substrate - Google Patents

Apparatus for fixing substrate Download PDF

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Publication number
KR20110006932A
KR20110006932A KR1020090064572A KR20090064572A KR20110006932A KR 20110006932 A KR20110006932 A KR 20110006932A KR 1020090064572 A KR1020090064572 A KR 1020090064572A KR 20090064572 A KR20090064572 A KR 20090064572A KR 20110006932 A KR20110006932 A KR 20110006932A
Authority
KR
South Korea
Prior art keywords
substrate
focus ring
present
fixing apparatus
plasma
Prior art date
Application number
KR1020090064572A
Other languages
Korean (ko)
Inventor
이기영
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020090064572A priority Critical patent/KR20110006932A/en
Publication of KR20110006932A publication Critical patent/KR20110006932A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

A substrate holding device is provided. The substrate fixing apparatus according to the embodiment of the present invention is a substrate fixing apparatus for fixing a substrate in a semiconductor manufacturing equipment, the electrostatic chuck to adsorb the substrate by the electrostatic force generated by applying a high voltage, a focus ring surrounding the edge of the substrate and the focus It is formed in the lower portion of the ring includes a cooling unit flows through.

Description

Apparatus for fixing substrate

The present invention relates to a substrate fixing apparatus, and more particularly, to a substrate fixing apparatus for adsorbing a substrate using electrostatic force inside a semiconductor manufacturing equipment.

In general, in the semiconductor manufacturing process, an etching process refers to a process of chemically or physically removing a thin film of an unnecessary portion, leaving only a necessary portion as a pattern is formed in a photo process on a thin film coated on an upper surface of a wafer.

As a typical method for removing the thin film deposited on the semiconductor wafer is a wet etching method and a dry etching method. The wet etching method is mainly a method of removing the oxide film deposited on the upper surface of the wafer by mixing diluted hydrofluoric acid (HF) and ultrapure water (DI water) at an appropriate ratio, and the dry etching method is a plasma on the wafer using a plasma (plasma) It is used to form a material film pattern on the substrate.

In a dry etching apparatus, an electrostatic chuck is generally used as a component for supporting a wafer on which an etching process is to be performed.

In this case, the static chuck on which the substrate is seated in the plasma processing apparatus allows a coolant to flow therein to lower the temperature of the substrate. At this time, the edge portion of the substrate has a problem that the cooling efficiency is inferior to the center portion.

The present invention has been devised to solve the above problems, and an object of the present invention is to provide a substrate fixing apparatus for forming a cooling unit through which a coolant flows under the focus ring so that cooling is constant for the entire area of the substrate. .

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the substrate fixing apparatus according to an embodiment of the present invention, the substrate fixing apparatus for fixing the substrate in the semiconductor manufacturing equipment, Electrostatic chuck to adsorb the substrate by the electrostatic force generated by applying a high voltage; A focus ring surrounding an edge of the substrate; And a cooling unit formed under the focus ring and flowing with the refrigerant.

According to the substrate fixing apparatus of the present invention as described above, the edge of the substrate can be efficiently cooled by the cooling unit formed under the focus ring, and thus, the substrate fixing apparatus can be cooled uniformly over the entire area of the substrate.

Details of the embodiments are included in the detailed description and drawings.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, the present invention will be described with reference to the drawings for describing a substrate fixing apparatus according to embodiments of the present invention.

First, before describing a substrate fixing apparatus according to an embodiment of the present invention, a dry etching apparatus will be described as an example of a semiconductor device in which the substrate fixing apparatus of the present invention is formed.

1 is a cross-sectional view of a dry visual device.

The dry etching apparatus 100 illustrated in FIG. 1 includes a process chamber 110 that provides a space in which an etching process is performed on a substrate, an upper electrode 140 provided at an upper end of the process chamber 110, and a process chamber 110. ) May include a lower electrode 160 provided at a lower end thereof, and an electrostatic chuck 120 on which a substrate is mounted.

The process chamber 110 provides a space for receiving a process gas injected through the gas injection hole 114 and performing a process of exciting the plasma in a plasma state. The process chamber 110 consists of a vessel having a cylindrical or polygonal cross section with a larger cross-sectional area than the size of the substrate W. The process chamber 110 may include an outlet 115 for flowing out the residue or gas after the process performed in the process chamber 110. The process chamber 110 may be made of a dielectric window made of a ceramic material so that high frequency power can be transmitted therethrough.

The upper electrode 140 is disposed above the process chamber 110 so as to face the electrostatic chuck 120, and the process gas supplied from the gas inlet 114 is transferred into the process chamber 110. Injection holes 145 may be formed for injection. That is, the upper electrode 140 may be configured in the form of a shower head. The upper electrode 140 is connected to the first high frequency power supply 150, and an electric field is formed between the upper electrode 140 and the lower electrode 160 to excite the injected gas into a plasma state.

The frequency of the first high frequency power supply unit 150 to be applied is determined in accordance with the purpose of the process in which the dry etching apparatus of the present invention is used, and thus can be changed by those skilled in the art.

The lower electrode 160 is disposed to face each other in the upper electrode 140 and the process chamber 110 to excite the process gas injected together with the upper electrode 140 in a plasma state.

Like the upper electrode 140, the lower electrode 160 is connected to the second high frequency power supply 170, and an electric field is formed between the upper electrode 140 and the lower electrode 160 to excite the injected gas into a plasma state. It plays a role.

The frequency of the second high frequency power supply unit 170 to be applied is determined in accordance with the purpose of the process in which the dry etching apparatus of the present invention is used, and thus can be changed by those skilled in the art.

The electrostatic chuck 120 absorbs and fixes the substrate W by using electrostatic force. Although not shown in FIG. 1, a high voltage may be applied to the static chuck 120 connected to a high voltage DC power supply (not shown) to generate an electrostatic force on the electrostatic chuck 120. The static chuck 120 may be mainly made of ceramic.

A coolant flows inside the lower electrode 160 or the electrostatic chuck 120 to maintain the temperature of the electrostatic chuck 120 at an appropriate temperature. At this time, the appropriate temperature may vary depending on the material to be etched, for example, may be about -10 ℃ to 5 ℃.

Referring to the operation of the dry etching device configured as described above are as follows.

Process gas required for the process is injected through the gas injection port 114, and high frequency power is applied to the upper electrode 140 and the lower electrode 160, respectively. First, the operation by the first high frequency power supply unit 150 and the second high frequency power supply unit 170 will be described. The first high frequency power supply unit 150 is applied to the upper electrode 140, the second high frequency power supply unit 170 is applied to the lower electrode 160, the electric field is formed in the upper and lower electrodes, the process chamber 110 by the formed electric field Inside, a plasma state is formed in which electrons and ions of the process gas are separated.

The substrate W is effectively mounted on the electrostatic chuck 120 on the lower electrode 160, and the high frequency power is applied to the lower electrode 160 from the second high frequency power supply unit 170 to the inside of the process chamber 110. Ions are accelerated in the direction in which the substrate W is located. Since the lower electrode 160 is biased by the second high frequency power supply unit 170, the plasma particles in the process chamber 110 are pulled toward the lower electrode 140 where the substrate W is located. Therefore, the plasma particles in the process chamber 110 may have a sufficiently high energy to impinge on the surface of the substrate W, thereby increasing the efficiency of the process using the plasma.

Hereinafter, a substrate fixing apparatus according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 2.

The substrate fixing apparatus according to the exemplary embodiment of the present invention may include an electrostatic chuck 120, a focus ring 170, and a cooling unit 190.

As described above, the second high frequency power source is connected to the lower electrode 160 to generate plasma in the chamber. A coolant flow path 165 is formed in the lower electrode 160, and a predetermined coolant flows in the coolant flow path 165 to pass the substrate W through the lower electrode 160 and the electrostatic chuck 120. ) Can be cooled to a predetermined temperature.

The electrostatic chuck 120 absorbs the substrate W by using electrostatic force, and is connected to a high voltage DC power source (not shown) to generate electrostatic force.

A focus ring 170 surrounding the substrate W may be formed at an edge of the substrate W. As shown in FIG. The focus ring 170 reduces the nonuniformity of the etching by the nonuniform plasma distribution across the semiconductor substrate W. That is, the focus ring 170 allows the reaction ions to effectively reach the substrate W, thereby uniformly etching the substrate W. The focus ring 170 is essentially used to improve uniformity in the dry etching process. In order to play this role, the focus ring 170 should have corrosion resistance, plasma resistance, and electrical conductivity. For this purpose, an insulating material made of silicon is generally used.

An outer covering 180 surrounding the focus ring 170 may be formed outside the focus ring 170.

As illustrated, a cooling unit 190 through which a refrigerant flows may be formed in a space below the focus ring 170. In more detail, a cooling unit 190 through which a coolant flows is formed in a space formed below the focus ring 170 and inside the outer covering 180 to cool the focus ring 170 and the outer covering 180. Therefore, the edge of the substrate W can be cooled.

Therefore, in the present invention, the substrate W is cooled through the coolant flow path 165 formed in the lower electrode 160, and at the same time, the substrate W is cooled through the cooling unit 190 formed under the focus ring 170. Since the seat can also be cooled, the entire area of the substrate W can be cooled uniformly.

Those skilled in the art will appreciate that the present invention can be embodied in other specific forms without changing the technical spirit or essential features of the present invention. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is indicated by the scope of the claims, which will be described later rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and the equivalent concept are included in the scope of the present invention. Should be interpreted.

1 is a cross-sectional view of a dry visual device.

2 is a cross-sectional view of a substrate fixing apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

120: electrostatic chuck

160: lower electrode

165: refrigerant path

170: focus ring

180: outer covering

190: cooling unit

Claims (2)

In a substrate fixing apparatus for fixing a substrate in a semiconductor manufacturing apparatus, An electrostatic chuck that adsorbs the substrate with an electrostatic force generated by applying a high voltage; A focus ring surrounding an edge of the substrate; And And a cooling unit formed under the focus ring and flowing with the refrigerant. The method of claim 1, And said semiconductor seedling device is a dry growing device using plasma.
KR1020090064572A 2009-07-15 2009-07-15 Apparatus for fixing substrate KR20110006932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090064572A KR20110006932A (en) 2009-07-15 2009-07-15 Apparatus for fixing substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090064572A KR20110006932A (en) 2009-07-15 2009-07-15 Apparatus for fixing substrate

Publications (1)

Publication Number Publication Date
KR20110006932A true KR20110006932A (en) 2011-01-21

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KR1020090064572A KR20110006932A (en) 2009-07-15 2009-07-15 Apparatus for fixing substrate

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130025144A (en) * 2011-09-01 2013-03-11 세메스 주식회사 Electrostatic chuck and substrate treating apparatus including the chuck
KR20180074013A (en) * 2016-12-23 2018-07-03 삼성전자주식회사 Plasma processing device
CN108630514A (en) * 2017-03-22 2018-10-09 东京毅力科创株式会社 Substrate board treatment
WO2019101600A1 (en) 2017-11-22 2019-05-31 Unilever Plc Apparatus for preparing a beverage
KR102299194B1 (en) * 2020-04-24 2021-09-07 (주)아이씨디 Hybrid Plasma Processing Device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130025144A (en) * 2011-09-01 2013-03-11 세메스 주식회사 Electrostatic chuck and substrate treating apparatus including the chuck
KR20180074013A (en) * 2016-12-23 2018-07-03 삼성전자주식회사 Plasma processing device
CN108630514A (en) * 2017-03-22 2018-10-09 东京毅力科创株式会社 Substrate board treatment
CN108630514B (en) * 2017-03-22 2020-06-26 东京毅力科创株式会社 Substrate processing apparatus
WO2019101600A1 (en) 2017-11-22 2019-05-31 Unilever Plc Apparatus for preparing a beverage
KR102299194B1 (en) * 2020-04-24 2021-09-07 (주)아이씨디 Hybrid Plasma Processing Device

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