KR20090101117A - 하전 입자 빔 묘화 장치의 교정용 기판 및 묘화 방법 - Google Patents
하전 입자 빔 묘화 장치의 교정용 기판 및 묘화 방법 Download PDFInfo
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- KR20090101117A KR20090101117A KR1020090023723A KR20090023723A KR20090101117A KR 20090101117 A KR20090101117 A KR 20090101117A KR 1020090023723 A KR1020090023723 A KR 1020090023723A KR 20090023723 A KR20090023723 A KR 20090023723A KR 20090101117 A KR20090101117 A KR 20090101117A
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- charged particle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
- H01J2237/30444—Calibration grids
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (5)
- 산화 실리콘(SiO2)재보다도 저열팽창재를 사용한 기판 본체와,상기 기판 위에 배치된 제1 도전막과,상기 제1 도전막 위에 선택적으로 배치되고, 상기 제1 도전막보다도 반사율이 큰 제2 도전막을 구비한 하전 입자 빔 묘화 장치의 교정용 기판이며,상기 교정용 기판의 이면은, 상기 저열팽창재가 노출되어 있는 것을 특징으로 하는, 하전 입자 빔 묘화 장치의 교정용 기판.
- 제1항에 있어서, 상기 제1 도전막은, 크롬(Cr)과 티탄(Ti)과 바나듐(V) 중 1개를 함유하는 것을 특징으로 하는, 하전 입자 빔 묘화 장치의 교정용 기판.
- 제1항에 있어서, 상기 제2 도전막은 탄탈(Ta)과 텅스텐(W)과 플라티나(Pt) 중 1개를 함유하는 것을 특징으로 하는, 하전 입자 빔 묘화 장치의 교정용 기판.
- 제1항에 있어서, 상기 제2 도전막에는 규칙적으로 배치된, 상기 제1 도전막까지 관통하는 복수의 개구부가 형성되는 것을 특징으로 하는, 하전 입자 빔 묘화 장치의 교정용 기판.
- 하전 입자 빔을 사용하여, 반사율이 서로 다른 2층의 막이 형성된 교정용 기판 위를 주사하여 상기 교정용 기판으로부터 반사된 반사 전자를 검출하고,검출된 결과를 사용하여 상기 하전 입자 빔의 조사 위치의 오차를 교정하고,조사 위치가 교정된 상기 하전 입자 빔을 사용하여 시료에 패턴을 묘화하는 것을 특징으로 하는, 묘화 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2008-073538 | 2008-03-21 | ||
JP2008073538 | 2008-03-21 |
Publications (2)
Publication Number | Publication Date |
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KR20090101117A true KR20090101117A (ko) | 2009-09-24 |
KR101076527B1 KR101076527B1 (ko) | 2011-10-24 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090023723A KR101076527B1 (ko) | 2008-03-21 | 2009-03-20 | 하전 입자 빔 묘화 장치의 교정용 기판 및 묘화 방법 |
Country Status (4)
Country | Link |
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US (1) | US8183544B2 (ko) |
JP (1) | JP5301312B2 (ko) |
KR (1) | KR101076527B1 (ko) |
TW (1) | TWI386977B (ko) |
Cited By (1)
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NL1037820C2 (en) * | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
JP5496041B2 (ja) | 2010-09-30 | 2014-05-21 | 大日本スクリーン製造株式会社 | 変位算出方法、描画データの補正方法、描画方法および描画装置 |
US20120112091A1 (en) * | 2010-11-04 | 2012-05-10 | National Taiwan University | Method for adjusting status of particle beams for patterning a substrate and system using the same |
JP5882348B2 (ja) | 2010-11-13 | 2016-03-09 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | マルチ小ビーム露光装置における2つの小ビーム間の距離を決定する方法 |
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2009
- 2009-02-18 JP JP2009035289A patent/JP5301312B2/ja active Active
- 2009-03-18 TW TW098108807A patent/TWI386977B/zh active
- 2009-03-20 US US12/408,212 patent/US8183544B2/en active Active
- 2009-03-20 KR KR1020090023723A patent/KR101076527B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011091171A (ja) * | 2009-10-21 | 2011-05-06 | Nuflare Technology Inc | 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置システム |
Also Published As
Publication number | Publication date |
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TWI386977B (zh) | 2013-02-21 |
US20090242807A1 (en) | 2009-10-01 |
JP5301312B2 (ja) | 2013-09-25 |
KR101076527B1 (ko) | 2011-10-24 |
US8183544B2 (en) | 2012-05-22 |
JP2009260273A (ja) | 2009-11-05 |
TW201005798A (en) | 2010-02-01 |
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