KR20090088050A - 연마 방법 - Google Patents
연마 방법 Download PDFInfo
- Publication number
- KR20090088050A KR20090088050A KR1020080013366A KR20080013366A KR20090088050A KR 20090088050 A KR20090088050 A KR 20090088050A KR 1020080013366 A KR1020080013366 A KR 1020080013366A KR 20080013366 A KR20080013366 A KR 20080013366A KR 20090088050 A KR20090088050 A KR 20090088050A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- substrate
- abrasive particles
- slurry
- silicon carbide
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000002245 particle Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000002002 slurry Substances 0.000 claims abstract description 59
- 239000007800 oxidant agent Substances 0.000 claims abstract description 35
- 238000002156 mixing Methods 0.000 claims abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 47
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000008119 colloidal silica Substances 0.000 claims description 27
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 229910019093 NaOCl Inorganic materials 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical group [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- -1 H 2 O 2 Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 18
- 239000013078 crystal Substances 0.000 abstract description 9
- 239000007921 spray Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004630 atomic force microscopy Methods 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 235000014443 Pyrus communis Nutrition 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000349 field-emission scanning electron micrograph Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
실시 예 | 비교 예1 | 비교 예2 | ||
colloidal silica(120㎚) + diamond(25㎚) + NaOCl | colloidal silica(120㎚) | colloidal silica(120㎚) + diamond(25㎚) | ||
기판 | 10×10㎟ 실리콘 카바이드 | |||
연마 패드 | SUBA800 | |||
슬러리 유입량 | 125[㎖/min] | |||
플레이트 회전 속도 | 120[rpm] | |||
압력 | 800[g/㎠] | |||
연마 시간 | 1 | 1 | 1 | |
Ra [Å] | before | 4.738 | 4.879 | 5.818 |
after | 1.087 | 5.977 | 2.190 | |
RMS [Å] | before | 6.183 | 6.363 | 7.519 |
after | 1.403 | 7.911 | 2.809 | |
무게 | before | 99.8 | 95.7 | 97.2 |
after | 99.5 | 95.7 | 97.2 | |
MRR | 0.3 | 0 | 0 |
Claims (14)
- 기판을 마련하는 단계;제 1 연마 입자와 산화제가 포함된 제 1 연마 슬러리를 마련하는 단계;제 2 연마 입자가 포함된 제 2 연마 슬러리를 마련하는 단계;상기 제 1 및 제 2 연마 슬러리를 이용하여 상기 기판을 연마하는 단계를 포함하는 연마 방법.
- 제 1 항에 있어서, 상기 기판은 실리콘 카바이드 기판을 포함하는 연마 방법.
- 제 1 항에 있어서, 상기 제 1 연마 입자는 실리카(SiO2), 알루미나(Al2O3), 세리아(CeO2), 망가니아(MnO2) 또는 지르코니아(ZrO2)중 적어도 어느 하나를 포함하는 연마 방법.
- 제 3 항에 있어서, 상기 제 1 연마 입자는 콜로이달 실리카인 연마 방법.
- 제 4 항에 있어서, 상기 콜로이달 실리카는 입자의 평균 크기가 10 내지 200㎚인 연마 방법.
- 제 1 항에 있어서, 상기 산화제는 NaOCl, H2O2, Fe(NO3)3, H5lO6, KlO3, K3Fe(CN)중 적어도 어느 하나를 이용하는 연마 방법.
- 제 4 항 또는 제 6 항에 있어서, 상기 콜로이달 실리카와 산화제는 7:1 내지 9:1의 비율로 혼합되는 연마 방법.
- 제 7 항에 있어서, 상기 콜로이달 실리카는 70 내지 90Vol%로 혼합되고, 상기 산화제는 10 내지 30Vol%로 혼합되는 연마 방법.
- 제 1 항에 있어서, 상기 제 2 연마 입자는 다이아몬드, 실리콘 카바이드, 보론 카바이드(B4C)중 적어도 하나를 이용하는 연마 방법.
- 제 9 항에 있어서, 상기 제 2 연마 입자는 입자의 평균 크기가 5 내지 100㎚인 연마 방법.
- 제 1 항에 있어서, 상기 제 1 연마 슬러리는 연속 분사하고, 상기 제 2 연마 슬러리는 주기적으로 분사하는 연마 방법.
- 제 1 항에 있어서, 상기 제 2 연마 입자는 상기 제 1 연마 입자보다 강도가 강한 연마 방법.
- 제 1 항에 있어서, 상기 제 2 연마 입자는 상기 제 1 연마 입자 및 상기 산화제의 혼합양에 대해 1% 이하로 혼합되는 연마 방법.
- 기판을 마련하는 단계;서로 다른 강도를 갖는 적어도 2종 이상의 연마 입자와 산화제가 포함된 연마 슬러리를 마련하는 단계; 및상기 연마 슬러리를 이용하여 상기 기판을 연마하는 단계를 포함하는 연마 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080013366A KR100935897B1 (ko) | 2008-02-14 | 2008-02-14 | 연마 방법 |
Applications Claiming Priority (1)
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KR1020080013366A KR100935897B1 (ko) | 2008-02-14 | 2008-02-14 | 연마 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20090088050A true KR20090088050A (ko) | 2009-08-19 |
KR100935897B1 KR100935897B1 (ko) | 2010-01-07 |
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KR1020080013366A KR100935897B1 (ko) | 2008-02-14 | 2008-02-14 | 연마 방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103897607A (zh) * | 2014-03-25 | 2014-07-02 | 山东天岳晶体材料有限公司 | 一种碳化硅用机械抛光液及采用其进行机械抛光的方法 |
KR20200129838A (ko) * | 2019-05-10 | 2020-11-18 | 한국산업기술대학교산학협력단 | 형광체 플레이트 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
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2008
- 2008-02-14 KR KR1020080013366A patent/KR100935897B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103897607A (zh) * | 2014-03-25 | 2014-07-02 | 山东天岳晶体材料有限公司 | 一种碳化硅用机械抛光液及采用其进行机械抛光的方法 |
KR20200129838A (ko) * | 2019-05-10 | 2020-11-18 | 한국산업기술대학교산학협력단 | 형광체 플레이트 제조방법 |
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Publication number | Publication date |
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KR100935897B1 (ko) | 2010-01-07 |
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