KR20090044422A - Method for fabricating photo mask to suppress haze - Google Patents
Method for fabricating photo mask to suppress haze Download PDFInfo
- Publication number
- KR20090044422A KR20090044422A KR1020070110515A KR20070110515A KR20090044422A KR 20090044422 A KR20090044422 A KR 20090044422A KR 1020070110515 A KR1020070110515 A KR 1020070110515A KR 20070110515 A KR20070110515 A KR 20070110515A KR 20090044422 A KR20090044422 A KR 20090044422A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- transmission control
- light transmission
- haze
- control layer
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Forming a light transmission control layer on a transparent substrate, a thermal oxidation process for the light transmission control layer to form a haze suppression layer on the surface of the light transmission control layer, patterning the haze suppression layer and the light transmission control layer A photomask manufacturing method for forming a mask pattern is presented.
Haze, MoSiN, Thermal Oxidation, Silicon Diffusion, Ammonia
Description
BACKGROUND OF THE
A photo mask is used in a lithography exposure process for implementing a circuit pattern of a semiconductor device on a wafer. As the degree of integration of semiconductor devices increases, the line width of the pattern to be transferred onto the wafer becomes smaller. Accordingly, in order to increase the resolution of the pattern, an exposure source of shorter wavelength band is used for the exposure process. As an exposure source of short wavelength band is used, haze may be caused to the photo mask by relatively strong light energy.
Haze may be caused from a phenomenon in which residual ions remaining on the surface of the photo mask from the manufacturing process cause an optical reaction by energy of an exposure source. Such residual ions may be ions such as SO x , NO x , PO x , F, Cl, NH 4 , Ca, Mg, and the like. Substantially, due to the increased exposure energy when using an exposure source in the wavelength range of 248 nm or less, the optical reaction between residual ions remaining on the mask surface causes growth defects such as haze.
In order to suppress the haze, the cleaning process is strengthened during the mask manufacturing process. However, when the molybdenum alloy layer containing molybdenum (Mo) is used during the mask manufacturing process, it is difficult to sufficiently suppress the haze by such cleaning alone. For example, molybdenum silicon nitride (MoSiN) used as a phase inversion layer in a phase inversion mask (PSM) may react with a cleaning solution containing ammonia to produce a compound such as 6 (NH 4 ) 7 MoO 3 . As a result, it is difficult to use a standard cleaning SC-1 cleaning process containing ammonia. In addition, it is difficult to suppress the reaction between the ammonia and the MoSiN layer, which may be present in trace amounts in the atmosphere in the wafer fab. As a result, a cleaning method that does not contain sulfuric acid or ammonia has been sought. However, there is a need for development of a new haze suppression method due to a decrease in defect removal rate during cleaning.
The present invention is to propose a method for manufacturing a photo mask that can prevent the growth defects by inhibiting the production of haze (haze).
One aspect of the invention, forming a light transmission control layer on a transparent substrate; Performing a thermal oxidation process on the light transmission control layer to form a haze suppression layer on the surface of the light transmission control layer; And forming a mask pattern by patterning the haze suppression layer and the light transmission control layer.
The light transmission control layer may include a layer containing silicon (Si). In this case, the thermal oxidation process may be performed by thermal diffusion of the silicon and oxidation of the diffused silicon.
The light transmission control layer containing silicon may be formed including a molybdenum silicon nitride (MoSiN) alloy layer.
The forming of the mask pattern may include forming a light blocking layer on the haze suppression layer; Selectively etching the light blocking layer, the haze suppression layer, and the light transmission control layer sequentially; Selectively removing a portion of the light blocking layer to expose a surface of the haze suppression layer to form the mask pattern including the haze suppression layer and the light transmission control layer; And cleaning the exposed portions of the mask pattern and the transparent substrate.
The cleaning may be performed using a cleaning liquid containing ammonia.
Embodiment of the present invention, by performing a thermal oxidation process on the light transmission control layer to form a haze suppression layer including an oxide layer, it is possible to suppress the generation of haze by the molybdenum alloy material constituting the light transmission control layer. have.
Embodiments of the present invention provide a method of forming a haze suppression layer that blocks and inhibits the generation of haze by a thermal oxidation process on a light transmission control layer such as a molybdenum silicon nitride (MoSiN) layer. The haze suppression layer may include silicon oxide (SiO 2 ) formed by oxidation of silicon (Si) diffused from a lower MoSiN layer. By the thermal oxidation process, the haze suppression layer including silicon oxide may be grown to a thickness of about several tens of microseconds.
1 illustrates a step of forming the light
2 shows a step of forming a
As shown in FIG. 6, the
The
In addition, the silicon oxide may be etched together by an etching gas for dry etching the MoSiN of the light
Referring to FIG. 3, a
Subsequently, an etching process for selectively removing other portions of the inner
In the photomask thus formed, a haze suppression layer containing silicon oxide by thermal oxidation protects the surface of the MoSiN layer. Therefore, it is possible to suppress the phenomenon that haze-induced residual ions such as ammonia and the like are activated by exposure energy and react with MoSiN or Mo. That is, defect generation due to haze generation can be suppressed. In addition, since the MoSiN layer is protected, the surface of the photomask can be cleaned using a cleaning solution containing ammonia or the like after patterning. As a result, the cleaning efficiency with respect to the photomask surface can be increased, and defect generation can be prevented more stably.
1 to 5 are cross-sectional views schematically illustrating a method of manufacturing a photomask according to an embodiment of the present invention.
FIG. 6 is a component graph presented to explain a haze suppression layer according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070110515A KR20090044422A (en) | 2007-10-31 | 2007-10-31 | Method for fabricating photo mask to suppress haze |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070110515A KR20090044422A (en) | 2007-10-31 | 2007-10-31 | Method for fabricating photo mask to suppress haze |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20090044422A true KR20090044422A (en) | 2009-05-07 |
Family
ID=40854984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070110515A KR20090044422A (en) | 2007-10-31 | 2007-10-31 | Method for fabricating photo mask to suppress haze |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20090044422A (en) |
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2007
- 2007-10-31 KR KR1020070110515A patent/KR20090044422A/en not_active Application Discontinuation
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