KR100755065B1 - Method for depressing growable residue - Google Patents

Method for depressing growable residue Download PDF

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KR100755065B1
KR100755065B1 KR1020050128316A KR20050128316A KR100755065B1 KR 100755065 B1 KR100755065 B1 KR 100755065B1 KR 1020050128316 A KR1020050128316 A KR 1020050128316A KR 20050128316 A KR20050128316 A KR 20050128316A KR 100755065 B1 KR100755065 B1 KR 100755065B1
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pattern
film
growth
photomask
transparent substrate
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KR20070066806A (en
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이준식
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명의 포토마스크의 성장성 이물질 억제방법은, 위상반전막패턴을 갖는 투명기판 전면에 스페이서용 물질막을 형성하는 단계와, 위상반전막패턴의 상부 및 투명기판 표면이 노출되도록 스페이서용 물질막에 대한 이방성식각을 수행하여 위상반전막패턴 측면 상에 측벽스페이서막을 형성하는 단계를 포함한다. 이와 같은 본원발명에 따르면, 포토리소그라피 공정을 수행하는 과정에서 성장성 이물질 발생이 억제되어 원하지 않는 패턴전사를 방지할 수 있으며, 이에 따라 소망하는 프로파일의 패턴을 형성하여 공정수율을 증대시킬 수 있다The method for suppressing growth of foreign substances in the photomask of the present invention includes forming a spacer material film on the entire surface of the transparent substrate having the phase shift film pattern, and exposing the upper surface of the phase shift film pattern and the transparent substrate surface to expose the surface of the transparent substrate. Performing anisotropic etching to form a sidewall spacer film on the side surface of the phase shift pattern. According to the present invention, the growth of foreign matter is suppressed in the process of performing the photolithography process to prevent unwanted pattern transfer, thereby forming a pattern of the desired profile to increase the process yield.

포토마스크, 세정공정, 성장성 이물질, 황산이온, 측벽스페이서막 Photomask, cleaning process, growth debris, sulfate ion, sidewall spacer film

Description

포토마스크의 성장성 이물질 억제방법{Method for depressing growable residue}Method for depressing growable residue of photomask

도 1 내지 도 3은 본 발명에 따른 포토마스크의 성장성 이물질 억제방법을 설명하기 위하여 나타내 보인 단면도들이다.1 to 3 are cross-sectional views shown to explain the growth debris suppression method of the photomask according to the present invention.

본 발명은 포토리소그리피공정에서 이용되는 포토마스크에 관한 것으로서, 특히 포토마스크의 성장성 이물질 억제방법에 관한 것이다.The present invention relates to a photomask used in the photolithography process, and more particularly, to a method for suppressing growth foreign matter of a photomask.

최근 반도체소자가 고집적화되면서 웨이퍼 상에 형성되는 패턴의 크기가 미세해지고, 이러한 미세한 패턴을 형성하기 위하여 포토 마스크를 사용하는 포토리소그라피(photolithography) 공정이 이용되고 있다. 상기 포토리소그라피 공정에 따르면, 패턴을 형성하고자 하는 물질막 위에 포토레지스트막을 도포하고, 소정의 광차단패턴을 갖는 포토마스크를 이용하여 상기 포토레지스트막의 일부에 광을 주사한다. 그리고 현상액을 이용한 현상으로 포토레지스트막의 일부가 제거된 포토레지스트막패턴을 형성한다. 이후 포토레지스트막패턴을 식각마스크로 한 식각공정으로 물질막의 노출부분을 제거함으로써, 포토마스크의 광차단패턴에 대응되는 물질 막패턴을 형성할 수 있다.Recently, as semiconductor devices are highly integrated, the size of patterns formed on wafers become fine, and photolithography processes using photo masks have been used to form such fine patterns. According to the photolithography process, a photoresist film is coated on a material film on which a pattern is to be formed, and light is injected into a portion of the photoresist film by using a photomask having a predetermined light blocking pattern. Then, a photoresist film pattern in which a part of the photoresist film is removed by development using a developer is formed. Thereafter, the exposed portion of the material film is removed by an etching process using the photoresist film pattern as an etching mask, thereby forming a material film pattern corresponding to the light blocking pattern of the photomask.

그런데 이와 같은 포토리소그라피 공정을 수행하는데 있어서, 포토마스크에 이물질이 있는 경우 이 이물질이 포토레지스트막에 전사되어 원하는 프로파일의 포토레지스트막패턴을 형성할 수 없으며, 이에 따라 물질막에도 원하지 않는 패턴이 형성될 수 있다. 따라서 포토마스크의 이물질을 제거하기 위하여 포토마스크에 대해 세정공정을 수행하여야 한다. 통상적으로 포토마스크에 대한 세정공정은 H2SO4, H2O2 및 H2O의 혼합액인 과산화황산혼합물(Sulfuric acid Peroxide Mixture; 이하 SPM)을 세정액으로 한 세정과, NH4OH, H2O2 및 H2O의 혼합액인 과산화암모늄혼합물(Ammonium Peroxide Mixture; APM, 이하 SC(Standard Clean)-1)을 세정액으로 한 세정을 포함한다.However, in performing the photolithography process, when there is foreign matter in the photomask, the foreign matter is transferred to the photoresist film to form a photoresist film pattern having a desired profile, thereby forming an unwanted pattern in the material film. Can be. Therefore, the cleaning process must be performed on the photomask in order to remove foreign substances from the photomask. Typically, the cleaning process for the photomask includes washing with Sulfuric Acid Peroxide Mixture (SPM), which is a mixture of H 2 SO 4 , H 2 O 2, and H 2 O, and NH 4 OH, H 2. And washing with Ammonium Peroxide Mixture (APM, SC (Standard Clean) -1), which is a mixture of O 2 and H 2 O, as a washing liquid.

그런데, 상기 SPM 및 SC-1 세정에 의해 포토마스크상의 이물질이나 원하지 않는 잔류물(residue)은 제거할 수 있지만, 상기 세정과정에서 성장성 이물질의 원인이 발생된다는 문제가 있다. 구체적으로 SPM 세정액으로부터의 황산이온(SO4 -) 및 SC-1 세정액으로부터의 암모니아(NH3)가 포토마스크상에 잔류하고, 특히 이 잔류하는 황산이온(SO4 -)과 암모니아(NH3)가 서로 반응하여 (NH4)2SO4란 염을 생성한다. 이와 같이 생성된 (NH4)2SO4란 염은 후속의 노광시 빛의 촉매에 의한 에너지가 첨가되어 노광을 하면 할수록 점점 커지는 성장성 이물질로 작용한다. 이와 같은 성장성 이물질은, 앞서 설명한 바와 같이, 원하지 않는 패턴전사를 야기한다.By the way, the SPM and SC-1 cleaning can remove foreign matters or unwanted residues on the photomask, but there is a problem that a cause of growth foreign matters is generated during the cleaning process. Specifically, sulfate ions (SO 4 − ) from the SPM washing liquid and ammonia (NH 3 ) from the SC-1 washing liquid remain on the photomask, and in particular, the remaining sulfate ions (SO 4 − ) and ammonia (NH 3 ) React with each other to form the (NH 4 ) 2 SO 4 salt. The (NH 4 ) 2 SO 4 silane salt generated as described above acts as a growth foreign material that increases as the exposure is performed by the addition of energy of the light catalyst during the subsequent exposure. Such growth foreign matter causes unwanted pattern transfer, as described above.

본 발명이 이루고자 하는 기술적 과제는, 세정공정에 의해 형성되는 성장성 이물질을 효과적으로 제거할 수 있는 포토마스크의 성장성 이물질 억제방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method for suppressing growth foreign matters in a photomask that can effectively remove growth foreign matters formed by a cleaning process.

상기 기술적 과제를 달성하기 위하여, 본 발명에 따른 포토마스크의 성장성 이물질 억제방법은, 위상반전막패턴을 갖는 투명기판 전면에 스페이서용 물질막을 형성하는 단계; 및 상기 위상반전막패턴의 상부 및 투명기판 표면이 노출되도록 상기 스페이서용 물질막에 대한 이방성식각을 수행하여 상기 위상반전막패턴 측면 상에 측벽스페이서막을 형성하는 단계를 포함하는 것을 특징으로 한다.In order to achieve the above technical problem, the growth of the foreign matter suppression method of the photomask according to the present invention, forming a spacer material film on the entire surface of the transparent substrate having a phase inversion film pattern; And performing anisotropic etching on the material layer for spacers to expose the upper surface of the phase shift pattern and the surface of the transparent substrate to form a sidewall spacer layer on the side surface of the phase shift pattern.

상기 스페이서용 물질막은 상기 위상반전막패턴과 동일한 물질막으로 형성하는 것이 바람직하다.The spacer material film may be formed of the same material film as the phase inversion film pattern.

상기 스페이서용 물질막은, 상기 위상반전막패턴의 임계치수 보정에 필요한 두께로 형성하는 것이 바람직하다.The spacer material film is preferably formed to a thickness necessary for correcting the critical dimension of the phase inversion film pattern.

이하 첨부 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 그러나, 본 발명의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술하는 실시예들로 인해 한정되어지는 것으로 해석되어져서는 안된다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below.

도 1 내지 도 3은 본 발명에 따른 포토마스크의 성장성 이물질 억제방법을 설명하기 위하여 나타내 보인 단면도들이다.1 to 3 are cross-sectional views shown to explain a growth debris suppression method of the photomask according to the present invention.

도 1을 참조하면, 먼저 통상의 방법을 사용하여 포토마스크를 제조한다. 잘 알려져 있는 바와 같이, 포토마스크에는 여러 종류가 있으나 본 실시예에서는 몰리브데늄실리콘옥사이드나이트라이드(MoSiON)막으로 형성된 위상반전막을 갖는 위상반전마스크(PSM; Phase Shift Mask)를 예를 들기로 한다. 위상반전마스크의 경우, 쿼츠와 같은 투명기판(100) 상에 MoSiON막으로 형성된 위상반전막패턴(110)이 배치된다. 이와 같은 위상반전마스크를 형성한 뒤에는 위상반전막패턴(110)을 형성하는 과정에서 생기는 레지스트 잔류물들이 발생된다.Referring to FIG. 1, first, a photomask is manufactured using a conventional method. As is well known, there are many types of photomasks, but in this embodiment, a phase shift mask (PSM) having a phase shift film formed of a molybdenum silicon oxide nitride (MoSiON) film will be exemplified. . In the case of a phase inversion mask, a phase inversion film pattern 110 formed of a MoSiON film is disposed on a transparent substrate 100 such as quartz. After the phase inversion mask is formed, resist residues generated in the process of forming the phase inversion layer pattern 110 are generated.

다음에 잔류물을 제거하기 위하여, SPM 세정 및 SC-1 세정을 수행하며, 경우에 따라서는 핫(hot) 탈이온수(deionzed water)를 이용한 세정도 추가로 수행할 수 있다. 그러나 앞서 언급한 바와 같이, 세정공정을 통해서 잔류물들은 제거될 수 있지만 성장성 이물질 원인(121, 122)이 발생한다. 성장성 이물질 원인(121, 122)은 투명기판(100) 표면 위에 배치되는 성장성 이물질 원인(121)과 위상반전막패턴(110) 측면에 배치되는 성장성 이물질 원인(122)을 포함한다. 이와 같은 성장성 이물질 원인(121, 122)을 제거하기 위하여 플라즈마 처리를 수행할 수 있다. 그러나 이와 같은 플라즈마 처리에 의해서 투명기판(100) 표면 위의 성장성 이물질 원인(121)을 제거할 수 있지만, 위상반전막패턴(110) 측면의 성장성 이물질 원인(122)은 쉽게 제거되지 않으며, 따라서 위상반전막패턴(100) 측면의 SO4 잔류물 및 NH4 잔류물과 같은 성장성 이물질 원인(122)은 여전히 남을 수 있다.Next, in order to remove the residue, SPM washing and SC-1 washing are performed, and in some cases, washing with hot deionized water may be further performed. However, as mentioned above, the residues can be removed through the cleaning process, but the cause of growth foreign matters 121 and 122 occurs. The growth foreign matter causes 121 and 122 include the growth foreign matter cause 121 disposed on the surface of the transparent substrate 100 and the growth foreign matter cause 122 disposed on the side surface of the phase inversion film pattern 110. Plasma treatment may be performed to remove such sources of growth foreign matter 121 and 122. However, although the cause of growth foreign matter 121 on the surface of the transparent substrate 100 can be removed by the plasma treatment, the cause of growth foreign matter 122 on the side of the phase inversion film pattern 110 is not easily removed, and thus the phase Growth foreign material sources 122 such as SO 4 residue and NH 4 residue on the side of the inversion film pattern 100 may still remain.

도 2를 참조하면, 투명기판(100) 및 위상반전막패턴(110)을 덮도록 스페이서용 물질막(130)을 형성한다. 스페이서용 물질막(130)은 위상반전막패턴(110)과 동일한 물질, 즉 몰리브데늄실리콘옥사이드나이트라이드(MoSiON)막으로 형성한다. 스페이서용 물질막(130)의 두께는 위상반전막패턴(110)의 임계치수(CD)를 고려하여 결정한다.Referring to FIG. 2, a spacer material film 130 is formed to cover the transparent substrate 100 and the phase inversion film pattern 110. The spacer material layer 130 is formed of the same material as the phase inversion film pattern 110, that is, a molybdenum silicon oxide nitride (MoSiON) film. The thickness of the spacer material layer 130 is determined in consideration of the critical dimension CD of the phase shift pattern 110.

도 3을 참조하면, 스페이서용 물질막(도 2의 130)에 대하여 플라즈마를 이용한 이방성식각, 예컨대 에치백(etchback)을 수행하여 위상반전막패턴(110)의 측면 상에 측벽스페이서막(132)을 형성한다. 앞서 언급한 바와 같이, 측벽스페이서막(132)과 위상반전막패턴(110)은 동일 물질로 이루어져 있으므로 광투과율의 변화는 발생하지 않으며, 더욱이 측벽스페이서막(132)에 의해 위상반전막패턴(110)의 임계치수(CD)도 보정할 수 있다.Referring to FIG. 3, the sidewall spacer layer 132 is formed on the side surface of the phase inversion layer pattern 110 by performing anisotropic etching, for example, etchback, using plasma on the material layer 130 (FIG. 2). To form. As mentioned above, since the sidewall spacer layer 132 and the phase inversion layer pattern 110 are made of the same material, the light transmittance does not change, and the phase inversion layer pattern 110 is further caused by the sidewall spacer layer 132. Can also be corrected.

이와 같이 측벽스페이서막(132)을 형성하기 위한 식각에 의해, 투명기판(100) 위의 성장성 이물질 원인(도 2의 121)은 모두 제거된다. 그리고 위상반전막패턴(110) 측면상의 성장성 이물질 원인(122)은 측벽스페이서막(132)에 의해 외부와 완전히 차단되며, 따라서 이를 이용하여 노광을 수행하더라도 성장성 이물질 원인(122)이 차단되므로, 성장성 이물질 발생 자체가 억제되며, 결과적으로 패턴전사불량이 억제된다.By etching to form the sidewall spacer layer 132 as described above, the cause of growth foreign matter (121 in FIG. 2) on the transparent substrate 100 is removed. In addition, the growth foreign matter cause 122 on the side surface of the phase inversion film pattern 110 is completely blocked from the outside by the sidewall spacer layer 132. Therefore, the growth potential foreign matter cause 122 is blocked even when exposure is performed using the growth potential. Foreign matter generation itself is suppressed, resulting in poor pattern transfer.

지금까지 설명한 바와 같이, 본 발명에 따른 포토마스크의 성장성 이물질 억제방법에 의하면, 포토마스크에 대한 세정공정을 수행한 후에, 산소 플라즈마 처리 를 수행하여 포토마스크상의 성장성 이물질 원인을 제거함으로써, 포토리소그라피 공정을 수행하는 과정에서 성장성 이물질이 발생하는 것을 억제하여 원하지 않는 패턴전사를 방지할 수 있으며, 이에 따라 소망하는 프로파일의 패턴을 형성하여 공정수율을 증대시킬 수 있다는 이점이 제공된다.As described so far, according to the method for suppressing growth of foreign matters in the photomask according to the present invention, after performing the cleaning process for the photomask, oxygen plasma treatment is performed to remove the cause of the growth of foreign matters on the photomask, thereby performing a photolithography process. In the process of performing the growth of foreign matters can be suppressed to prevent unwanted pattern transfer, thereby providing an advantage of forming a pattern of the desired profile to increase the process yield.

이상 본 발명을 바람직한 실시예를 들어 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 여러 가지 변형이 가능함은 당연하다.Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical spirit of the present invention. Do.

Claims (3)

위상반전막패턴을 갖는 투명기판 전면에 스페이서용 물질막을 형성하는 단계; 및Forming a material film for a spacer on the entire surface of the transparent substrate having a phase inversion film pattern; And 상기 위상반전막패턴의 상부 및 투명기판 표면이 노출되도록 상기 스페이서용 물질막에 대한 이방성식각을 수행하여 상기 위상반전막패턴 측면 상에 측벽스페이서막을 형성하는 단계를 포함하는 것을 특징으로 하는 포토마스크의 성장성 이물질 억제방법.Performing anisotropic etching on the material layer for spacers to expose the upper surface of the phase shift pattern and the surface of the transparent substrate to form a sidewall spacer layer on the side of the phase shift pattern. Method of suppressing growth foreign matter. 제1항에 있어서,The method of claim 1, 상기 스페이서용 물질막은 상기 위상반전막패턴과 동일한 물질막으로 형성하는 것을 특징으로 하는 포토마스크의 성장성 이물질 억제방법.The material layer for spacers may be formed of the same material layer as the phase inversion layer pattern. 제1항에 있어서,The method of claim 1, 상기 스페이서용 물질막은, 상기 위상반전막패턴의 임계치수 보정에 필요한 두께로 형성하는 것을 특징으로 하는 포토마스크의 성장성 이물질 억제방법.The material film for spacers may be formed to have a thickness necessary for correcting a critical dimension of the phase shift film pattern.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591549A (en) * 1994-09-16 1997-01-07 United Microelectronics Corporation Self aligning fabrication method for sub-resolution phase shift mask
KR20000065390A (en) * 1999-04-02 2000-11-15 김영환 Method for removing residue according for manufacturing process of semiconductor device
KR20050064010A (en) * 2003-12-23 2005-06-29 동부아남반도체 주식회사 Method for fabricating semiconductor device
KR20050102465A (en) * 2004-04-22 2005-10-26 삼성전자주식회사 Semiconductor device having fin field effect transistor and method of fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591549A (en) * 1994-09-16 1997-01-07 United Microelectronics Corporation Self aligning fabrication method for sub-resolution phase shift mask
KR20000065390A (en) * 1999-04-02 2000-11-15 김영환 Method for removing residue according for manufacturing process of semiconductor device
KR20050064010A (en) * 2003-12-23 2005-06-29 동부아남반도체 주식회사 Method for fabricating semiconductor device
KR20050102465A (en) * 2004-04-22 2005-10-26 삼성전자주식회사 Semiconductor device having fin field effect transistor and method of fabricating the same

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