KR20090027532A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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KR20090027532A
KR20090027532A KR1020070092817A KR20070092817A KR20090027532A KR 20090027532 A KR20090027532 A KR 20090027532A KR 1020070092817 A KR1020070092817 A KR 1020070092817A KR 20070092817 A KR20070092817 A KR 20070092817A KR 20090027532 A KR20090027532 A KR 20090027532A
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South Korea
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coating layer
metal coating
bonding wire
led chip
copper
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KR1020070092817A
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Korean (ko)
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KR101380387B1 (en
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오광용
류승렬
김대원
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서울반도체 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

An LED package comprises the bonding wire with the copper core part and the metal coating layer to improve the electric conduction and heat conduction of the bonding wire. The LED package(10) comprises the LED chip(16), and the package body(13) and the bonding wire(17). Current is applied to the LED chip through the leads of the package body. The bonding wire connects to the lead and the LED chip. The bonding wire comprises the core unit(17a) and metal coating layer(17b). The core unit of the bonding wire is formed with copper. The metal coating layer is formed in the surface of the core unit and supplements the optical property of the core unit.

Description

ＬＥＤ 패키지{LIGHT EMITTING DIODE PACKAGE}LED package {LIGHT EMITTING DIODE PACKAGE}

본 발명은 LED 패키지에 관한 것으로, 더욱 상세하게는 구리로 이루어진 코어부와 그 코어부에 형성된 금속 코팅층으로 구성된 본딩와이어를 사용함으로써 가격이 싸고 열전도도, 전기전도도가 우수하며 구리의 산화 및 광 흡수를 개선한 LED 패키지에 관한 것이다.The present invention relates to an LED package, and more particularly, by using a bonding wire composed of a core part made of copper and a metal coating layer formed on the core part, the cost is low, thermal conductivity, electrical conductivity is excellent, copper oxidation and light absorption. The improved LED package.

일반적으로, LED 패키지는 패키지 본체, 상기 패키지 본체에 실장된 LED칩, 그 LED칩에 전류를 인가하기 위한 리드들을 포함한다. 상기 LED칩은 하나의 리드상에 부착되며, 본딩와이어를 통해 다른 리드에 접속된다.In general, an LED package includes a package body, an LED chip mounted on the package body, and leads for applying current to the LED chip. The LED chip is attached on one lead and connected to the other lead through a bonding wire.

이러한 본딩와이어는 현재 Si가 함유된 알루미늄(Al)와이어와 금(Au)와이어를 주로 사용하고 있다.Such bonding wires currently use aluminum (Al) and gold (Au) wires containing Si.

상기 알루미늄와이어는 볼 형성이 어려워 방향성을 가지고 본딩함으로써 다양한 패키지의 적용이 어렵고 양산성이 떨어진다. 또한, 전기 전도도나 열전도등이 금(Au)이나 구리(Cu)에 비해 떨어진다. 이로 인해 많은 전류 구동시 문제가 발생한다. 또한, 알루미늄 와이어는 두께를 가늘게 하는데 한계가 있어, LED 패키지의 본딩와이어로 사용하는데 제한이 있다.Since the aluminum wire is difficult to form a ball, it is difficult to apply a variety of packages by bonding with a directional orientation and poor mass productivity. In addition, electrical conductivity and thermal conductivity are inferior to gold (Au) and copper (Cu). This causes a problem when driving a large current. In addition, aluminum wire has a limitation in thinning thickness, and thus is limited in use as a bonding wire of an LED package.

그리고, 상기 금(Au)와이어는 부식 특성이나 전기 전도도나 열전도 등이 우수하나 가격이 비싸고, 현재 LED에 적용시 빛, 특히 청색 파장의 빛을 흡수함으로써 광효율을 감소시키는 문제점을 가지고 있다.In addition, the gold (Au) wire is excellent in corrosion characteristics, electrical conductivity, thermal conductivity, etc., but the price is high, and has a problem of reducing the light efficiency by absorbing light, especially blue wavelength light when applied to the current LED.

본 발명이 이루고자 하는 기술적 과제는, 가격이 싸고 열전도, 전기 전도도가 우수하며 광학특성이 좋은 본딩와이어를 갖는 LED 패키지를 제공하는데 있다.An object of the present invention is to provide an LED package having a bonding wire which is inexpensive, has excellent thermal conductivity, electrical conductivity and good optical properties.

상기 기술적 과제들을 이루기 위하여, 본 발명의 실시예에 따른 LED 패키지는 LED칩; 상기 LED칩에 전류를 인가하기 위한 리드들을 갖는 패키지 본체; 및 상기 리드와 상기 LED칩을 연결하기 위한 본딩와이어를 포함하되, 상기 본딩와이어는 구리로 이루어진 코어부와, 그 코어부의 표면에 형성되어 상기 코어부의 광학특성을 보완하는 금속 코팅층을 포함한다.In order to achieve the above technical problem, the LED package according to an embodiment of the present invention is an LED chip; A package body having leads for applying current to the LED chip; And a bonding wire for connecting the lead and the LED chip, wherein the bonding wire includes a core part made of copper and a metal coating layer formed on a surface of the core part to compensate for optical characteristics of the core part.

본 실시예에 따라, 상기 금속 코팅층은 상기 구리보다 융점이 높은 금속으로 이루어진다. 바람직하게 상기 금속 코팅층은 파라듐(Pd), 니켈(Ni), 크롬(Cr), 백금(Pt) 및 그것들의 합금 중 어느 하나로 이루어진다. 더 나아가 상기 코어부 대 상기 금속 코팅층의 두께 비가 150~400 대 1로 정해질 수 있다.According to this embodiment, the metal coating layer is made of a metal having a higher melting point than the copper. Preferably, the metal coating layer is made of one of palladium (Pd), nickel (Ni), chromium (Cr), platinum (Pt), and alloys thereof. Furthermore, the thickness ratio of the core portion to the metal coating layer may be set to 150 to 400 to 1.

본 발명의 실시예에 따르면 구리로 이루어진 코어부와 그 코어부에 형성된 금속 코팅층으로 구성된 본딩와이어를 사용함으로써, 가격이 싸고 열전도도, 전기전도도 특성을 향상시켜 광효율을 향상시킬 수 있는 효과가 있다.According to an embodiment of the present invention, by using a bonding wire composed of a core part made of copper and a metal coating layer formed on the core part, it is inexpensive and has an effect of improving light efficiency by improving thermal conductivity and electrical conductivity characteristics.

또한, 본 발명의 실시예에 따르면, 코어부의 외면에 금속 코팅층을 형성함으로써, 구리의 산화 및 광 흡수를 방지할 수 있는 효과도 있다. 이에 따라, 금와이 어의 문제점인 청색 파장에 대한 흡수를 방지하여 광효율을 더욱 향상시킬 수 있다.In addition, according to an embodiment of the present invention, by forming a metal coating layer on the outer surface of the core portion, there is an effect that can prevent the oxidation and light absorption of copper. Accordingly, it is possible to further improve the light efficiency by preventing the absorption of the blue wavelength which is a problem of the gold wire.

이하, 첨부한 도면들을 참조하여 본 발명의 실시예들을 상세히 설명하기로 한다. 다음에 소개되는 실시예들은 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 예로서 제공되는 것이다. 따라서, 본 발명은 이하 설명되는 실시예들에 한정되지 않고 다른 형태로 구체화될 수도 있다. 그리고, 도면들에 있어서, 구성요소의 폭, 길이, 두께 등은 편의를 위하여 과장되어 표현될 수 있다. 명세서 전체에 걸쳐서 동일한 참조번호들은 동일한 구성요소들을 나타낸다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

도 1 은 본 발명의 일 실시예에 따른 LED 패키지를 설명하기 위한 단면도이고, 도 2 는 도 1에 도시된 'A'의 확대도이다.1 is a cross-sectional view illustrating an LED package according to an embodiment of the present invention, and FIG. 2 is an enlarged view of 'A' shown in FIG. 1.

도 1 은 본 발명의 일 실시예에 따른 LED 패키지(10)는 리드프레임으로 형성되어 외부 전극들에 연결되는 제 1 및 제 2 리드(11, 12) 및 이것과 일체로 성형된 패키지 본체(13)를 구비한다. 패키지 본체(13)는 전형적으로 열가소성 수지를 삽입 몰딩하여 형성할 수 있다. 또한, 패키지 본체(13)의 재질은 세라믹 재질, 플라스틱 재질을 포함하며, LED 패키지 내부 구조를 다양하게 설계할 수 있다.FIG. 1 shows an LED package 10 according to an embodiment of the present invention. The package body 13 integrally formed with the first and second leads 11 and 12, which are formed as a lead frame and connected to external electrodes. ). The package body 13 may typically be formed by insert molding a thermoplastic resin. In addition, the material of the package body 13 may include a ceramic material and a plastic material, and the LED package internal structure may be variously designed.

상기 제 1 및 제 2 리드(11, 12)는 각각의 일단이 근접하여 대향하도록 배치되며, 타단은 서로 반대방향으로 연장하여 패키지 본체(13)의 외부로 돌출된다. 도면상에 상기 제 1 및 제 2 리드(11, 12)의 타단이 패키지 본체(13)의 외부로 돌출되는 것으로 설명하고 있으나, 본 발명이 이에 한정되는 것은 아닌바, 상기 제 1 및 제 2 리드(11, 12)는 패키지 본체(13)를 상하로 관통하는 비아(via, 미도시)를 통해 외부 전극에 각각 전기적으로 연결될 수도 있다.The first and second leads 11 and 12 are disposed to face each other in close proximity, and the other ends thereof extend in opposite directions to protrude to the outside of the package body 13. Although the other ends of the first and second leads 11 and 12 protrude to the outside of the package body 13 in the drawings, the present invention is not limited thereto, and the first and second leads are not limited thereto. 11 and 12 may be electrically connected to external electrodes through vias (not shown) that penetrate the package body 13 up and down, respectively.

상기 패키지 본체(13)는 상기 제 1 및 제 2 리드(11, 12)의 적어도 일부를 둘러싸서 상기 제 1 및 제 2 리드(11, 12)를 고정시킨다. 또한, 상기 패키지 본체(13)는 상기 제 1 및 제 2 리드(11, 12)를 노출시키는 캐비티(19)를 갖는다. 상기 캐비티(19)의 내벽(14)은 LED칩(16)에서 방출된 빛을 외부로 반사하도록 일정한 경사면을 갖는다.The package body 13 surrounds at least a portion of the first and second leads 11 and 12 to fix the first and second leads 11 and 12. The package body 13 also has a cavity 19 exposing the first and second leads 11, 12. The inner wall 14 of the cavity 19 has a constant inclined surface to reflect the light emitted from the LED chip 16 to the outside.

상기 LED칩(16)이 상기 캐비티(19)의 바닥면에 실장된다. 이때, 도시한 바와 같이, 상기 LED칩(16)은 상기 제 1 리드(11) 상에 도전성 접착제에 의해 부착될 수 있다. 상기 도전성 접착제는 은 에폭시(Ag epoxy)일 수 있다. 이에 더하여, 상기 LED칩(16)은 본딩와이어(17)를 통해 제 2 리드(12)에 접속될 수 있다. 이에 따라, 상기 LED칩(16)은 상기 제 1 및 제 2 리드(11, 12)에 전기적으로 연결된다.The LED chip 16 is mounted on the bottom surface of the cavity 19. In this case, as shown, the LED chip 16 may be attached to the first lead 11 by a conductive adhesive. The conductive adhesive may be silver epoxy. In addition, the LED chip 16 may be connected to the second lead 12 through the bonding wire 17. Accordingly, the LED chip 16 is electrically connected to the first and second leads 11 and 12.

상기 본딩와이어(17)는 구리로 이루어진 코어부(17a)와, 그 코어부(17a)의 외면에 형성된 금속 코팅층(17b)으로 구성된다. 상기 금속 코팅층(17b)은 구리보다 융점이 높은 금속으로 이루어진다(표 1 참조). 이에 따라, 구리와 금속 코팅층(17b)의 융점 차이에 의해 내부의 구리가 먼저 용융되고 이후에 금속 코팅층(17b)이 용융되어 도 2에 잘 도시된 바와 같은 형태의 볼을 형성할 수 있다. 상기 금속 코팅층(17b)은 상기 코어부(17a)를 이루는 구리의 산화 및 광 흡수를 방지할 수 있다.The bonding wire 17 is composed of a core portion 17a made of copper and a metal coating layer 17b formed on an outer surface of the core portion 17a. The metal coating layer 17b is made of a metal having a higher melting point than copper (see Table 1). Accordingly, due to the melting point difference between the copper and the metal coating layer 17b, the inner copper may be first melted, and then the metal coating layer 17b may be melted to form a ball having a shape as shown in FIG. The metal coating layer 17b may prevent oxidation and light absorption of copper constituting the core portion 17a.

다음의 표 1은 금속 특성을 나타낸 표이다.Table 1 below is a table showing the metal properties.

Figure 112007066258615-PAT00001
Figure 112007066258615-PAT00001

상기와 같은 표 1에서 보듯이 열전도, 전기 전도도가 우수한 구리로 이루어진 코어부(17a)와 금속 코팅층(17b)으로 구성된 본딩와이어(17)로 사용함으로써 광효율을 향상시킬 수 있다. 이에 더하여, 은백색의 금속 코팅층(17b)을 상기 코어부(17a)의 외면에 형성함으로써, 구리의 산화 및 광 흡수 특성을 개선할 수 있다.As shown in Table 1, the light efficiency can be improved by using the bonding wire 17 composed of the core part 17a made of copper and the metal coating layer 17b having excellent thermal and electrical conductivity. In addition, by forming the silver-white metal coating layer 17b on the outer surface of the core portion 17a, the oxidation and light absorption characteristics of copper can be improved.

이러한 금속 코팅층(17b)은 광 반사특성이 우수한 금속으로 이루어질 수 있으며, 그 재료로 파라듐(Pd), 니켈(Ni), 크롬(Cr), 백금(Pt), 은(Ag) 및 그것들의 합금 중 어느 하나가 채택될 수 있다.The metal coating layer 17b may be made of a metal having excellent light reflecting properties, and may be made of palladium (Pd), nickel (Ni), chromium (Cr), platinum (Pt), silver (Ag), and alloys thereof. Any one may be adopted.

이와 같은 재료로 이루어진 금속 코팅층(17b)은 볼의 형성 상태와 전기 전도도 특성, 산화 방지 능력을 고려하여 상기 코어부(17a)의 두께 보다 작은 두께로 형성된다. 상기 코어부(17a) 대 상기 금속 코팅층(17b)의 두께 비가 150~400 대 1로 정해짐이 바람직하다.The metal coating layer 17b made of such a material is formed to have a thickness smaller than the thickness of the core portion 17a in consideration of the formation state of the balls, the electrical conductivity characteristics, and the anti-oxidation ability. Preferably, the thickness ratio of the core portion 17a to the metal coating layer 17b is set to 150 to 400 to 1.

이때, 상기 코어부(17a)의 두께가 150 미만인 경우 금속 코팅층(17b)이 두껍게 형성되어 구리로 이루어진 코어부(17a)로 인해 발생되는 열전도도, 전기 전도도 등의 특성이 떨어지고, 상기 금속 코팅층(17b)에 사용되는 금속량이 많아져 비용 부담이 발생할 수 있다. 상기 코어부(17a)의 두께가 400을 초과하는 경우, 금속 코팅층(17b)이 얇게 형성되어 상기 코어부(17a)로부터 금속 코팅층(17b)이 벗겨질 수 있다. 이에 따라, 구리의 산화 및 광을 흡수하여 광효율을 감소시킬 수 있다.At this time, when the thickness of the core portion 17a is less than 150, the metal coating layer 17b is formed to be thick, so that characteristics such as thermal conductivity and electrical conductivity generated by the core portion 17a made of copper are inferior, and the metal coating layer ( The amount of metal used in 17b) may increase, resulting in a cost burden. When the thickness of the core portion 17a exceeds 400, the metal coating layer 17b may be formed thin so that the metal coating layer 17b may be peeled off from the core portion 17a. Accordingly, it is possible to reduce the light efficiency by absorbing the oxidation and light of copper.

본 실시예에 따라, 직경이 대략 25마이크로인 구리 재질의 코어부(17a)와 대략 0.1마이크로인 파라듐 재질의 금속 코팅층(17b)일 때 가장 좋은 특성을 나타낸다. 이와 같은 두께를 갖는 코어부(17a)와 금속 코팅층(17b)을 사용함에 따라 열전도도, 전기 전도도의 특성이 우수하여 광효율을 향상시킬 수 있을 뿐만 아니라, 구리의 산화 및 광 흡수를 방지할 수 있다.According to the present embodiment, the best characteristics are achieved when the core portion 17a of copper material having a diameter of about 25 micrometers and the metal coating layer 17b of palladium material having about 0.1 micrometers are used. By using the core portion 17a and the metal coating layer 17b having such a thickness, the thermal conductivity and the electrical conductivity are excellent, thereby improving the light efficiency and preventing the oxidation and light absorption of copper. .

한편, 상기 캐비티(19)에는 봉지부재(15)가 채워진다. 상기 봉지부재(15)는 캐비티(19)의 바닥면에 실장된 상기 LED칩(16) 상부를 덮는다. 또한, 상기 봉지부재(15)는 본딩와이어(17)를 덮을 수 있다. 이때, 상기 봉지부재(15)는 실리콘 수지일 수 있으나, 본 발명이 이에 한정되는 것은 아니다.Meanwhile, the sealing member 15 is filled in the cavity 19. The encapsulation member 15 covers an upper portion of the LED chip 16 mounted on the bottom surface of the cavity 19. In addition, the encapsulation member 15 may cover the bonding wire 17. At this time, the encapsulation member 15 may be a silicone resin, but the present invention is not limited thereto.

이에 더하여, 상기 봉지부재(15)의 상부면은 도 1에 도시된 바와 같이 평평한 면일 수도 있으며, 일정한 곡률을 가질 수도 있다. 또한, 상기 봉지부재(15)는 적어도 하나의 형광체(18)를 함유할 수 있다. 이러한 형광체는 LED칩(16)에서 방출된 빛의 파장을 변환시키기 위해 채택된다.In addition, the upper surface of the encapsulation member 15 may be a flat surface as shown in FIG. 1, or may have a constant curvature. In addition, the encapsulation member 15 may contain at least one phosphor 18. This phosphor is employed to convert the wavelength of light emitted from the LED chip 16.

도 3 는 본 발명의 다른 실시예에 따른 LED 패키지를 설명하기 위한 단면도이다.3 is a cross-sectional view illustrating an LED package according to another embodiment of the present invention.

도 3에 도시된 바와 같이 본 발명의 다른 실시예에 따른 LED 패키지(10)는 패키지 본체(13), LED칩(16), 본딩와이어(17) 및 봉지부재(15)를 포함한다. 여기에서, 상기 패키지 본체(13)는 상기 LED칩(16)과 전기적으로 연결되는 제 1 및 제 2 리드(11, 12)를 갖는 패키지 본체(13)이다. 이러한 패키지 본체(13)는 본 실시예에서 인쇄회로기판(이하, ‘PCB'라 한다)이다. 상기 제 1 및 제 2 리드(11, 12)는 서로 이격되게 배치된다. 상기 제 1 및 제 2 리드(11, 12)는 예를 들면, 구리 박막과 같은 전도성 박막 금속을 도금, 프린팅, 또는 기타 다른 방식을 통해 형성하여 이루어지는 것이다.As shown in FIG. 3, the LED package 10 according to another embodiment of the present invention includes a package body 13, an LED chip 16, a bonding wire 17, and an encapsulation member 15. Here, the package body 13 is a package body 13 having first and second leads 11 and 12 electrically connected to the LED chip 16. The package body 13 is a printed circuit board (hereinafter referred to as "PCB") in this embodiment. The first and second leads 11 and 12 are spaced apart from each other. The first and second leads 11 and 12 may be formed by, for example, forming a conductive thin film metal such as a copper thin film through plating, printing, or other methods.

상기 LED칩(16)은 상기 패키지 본체(13)의 제 1 리드(11)상에 부착되고, 상기 LED칩(16)은 상기 제 2 리드(12)와 본딩와이어(17)에 의해 연결된다. 상기 본딩와이어(17)는 구리(Cu)로 이루어진 코어부(17a)와, 상기 코어부(17a)에 형성된 금속 코팅층(17b)으로 구성된다. 이러한 코어부(17a)와 금속 코팅층(17b)은 앞선 실시예에서 설명하였으므로, 그 상세한 설명을 생략한다.The LED chip 16 is attached on the first lead 11 of the package body 13, and the LED chip 16 is connected to the second lead 12 by a bonding wire 17. The bonding wire 17 is composed of a core portion 17a made of copper (Cu) and a metal coating layer 17b formed on the core portion 17a. Since the core portion 17a and the metal coating layer 17b have been described in the foregoing embodiments, detailed description thereof will be omitted.

상기 봉지부재(15)는 렌즈형상으로 형성되기 때문에 광효율이 높아진다. 이러한 봉지부재(15)의 형성을 위한 몰딩 공정은 이미 알려진 기술이고 본 발명과 직접적인 관련성이 적으므로 그 구체적인 설명을 생략한다.Since the encapsulation member 15 is formed in a lens shape, the light efficiency is increased. Molding process for the formation of the sealing member 15 is a known technique and has a direct relationship with the present invention, so a detailed description thereof will be omitted.

상기 봉지부재(15)내에는 바람직하게 적어도 하나 이상의 형광체(18)를 함유하여, 상기 LED칩(16)으로부터 나온 광과 형광체(18)에 의하여 여기된 광이 혼합되어 다양한 색을 만들 수 있다.The encapsulation member 15 preferably contains at least one phosphor 18 so that light emitted from the LED chip 16 and light excited by the phosphor 18 may be mixed to produce various colors.

도 4 는 본 발명의 또 다른 실시예에 따른 LED 패키지를 설명하기 위한 단면도이다.4 is a cross-sectional view illustrating an LED package according to another embodiment of the present invention.

도 4에 도시된 바와 같이 본 발명의 또 다른 실시예에 따른 LED 패키지(10)는 앞선 실시예와 달리 히트싱크(14)를 갖으며, LED칩(16)은 상기 히트싱크(14)에 접착제(161)에 의해 부착된다. 상기 히트싱크(14)에 부착된 LED칩(16)은 2개의 본딩와이어(17)에 의해 제 1 및 제 2 리드(11, 12)에 전기적으로 연결된다.As shown in FIG. 4, the LED package 10 according to another embodiment of the present invention has a heat sink 14 unlike the previous embodiment, and the LED chip 16 is adhesively bonded to the heat sink 14. 161 is attached. The LED chip 16 attached to the heat sink 14 is electrically connected to the first and second leads 11 and 12 by two bonding wires 17.

여기에서, 리드들(11, 12)과 LED칩(16)을 연결하기 위한 본딩와이어(17)는 투 본딩방식으로, 상술한 바와 같이 구리로 이루어진 코어부(17a)와 그 코어부(17a)의 외면에 형성되는 광 반사특성이 우수한 금속 코팅층(17b)으로 구성된다. 이와 같은 코어부(17a)와 금속 코팅층(17b)으로 이루어진 본딩와이어(17)를 사용함에 따라 열전도도, 전기 전도도의 특성이 우수하여 광효율을 향상시킬 수 있을 뿐만 아니라, 구리의 산화 및 광 흡수를 방지할 수 있다.Here, the bonding wire 17 for connecting the leads 11, 12 and the LED chip 16 is a two-bond method, as described above, the core portion 17a made of copper and the core portion 17a. It is composed of a metal coating layer (17b) excellent in light reflection characteristics formed on the outer surface of the. By using such a bonding wire 17 composed of the core portion 17a and the metal coating layer 17b, the thermal efficiency and the electrical conductivity are excellent, thereby improving the light efficiency and improving the oxidation and light absorption of copper. You can prevent it.

도 1 은 본 발명의 일 실시예에 따른 LED 패키지를 설명하기 위한 단면도.1 is a cross-sectional view for explaining an LED package according to an embodiment of the present invention.

도 2 는 도 1에 도시된 'A'의 확대도.FIG. 2 is an enlarged view of 'A' shown in FIG. 1. FIG.

도 3 은 본 발명의 다른 실시예에 따른 LED 패키지를 설명하기 위한 단면도.3 is a cross-sectional view for explaining an LED package according to another embodiment of the present invention.

도 4 는 본 발명의 또 다른 실시예에 따른 LED 패키지를 설명하기 위한 단면도.Figure 4 is a cross-sectional view for explaining an LED package according to another embodiment of the present invention.

<도면 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

10 : LED 패키지 11 : 제 1 리드10: LED Package 11: First Lead

12 : 제 2 리드 13 : 패키지 본체12: second lead 13: package body

14 : 내벽 15 : 봉지부재14 inner wall 15 sealing member

16 : LED칩 17 : 본딩와이어16: LED chip 17: bonding wire

17a : 코어부 17b : 금속 코팅층17a: core portion 17b: metal coating layer

18 : 형광체 19 : 캐비티18: phosphor 19: cavity

Claims (4)

LED칩;LED chip; 상기 LED칩에 전류를 인가하기 위한 리드들을 갖는 패키지 본체; 및A package body having leads for applying current to the LED chip; And 상기 리드와 상기 LED칩을 연결하기 위한 본딩와이어를 포함하되,Bonding wire for connecting the lead and the LED chip, 상기 본딩와이어는 구리로 이루어진 코어부와, 그 코어부의 표면에 형성되어 상기 코어부의 광학특성을 보완하는 금속 코팅층을 포함하는 것을 특징으로 하는 LED 패키지.The bonding wire includes a core part made of copper and a metal coating layer formed on a surface of the core part to complement an optical characteristic of the core part. 청구항 1에 있어서,The method according to claim 1, 상기 금속 코팅층은 상기 구리보다 융점이 높은 금속으로 이루어진 것을 특징으로 하는 LED 패키지.The metal coating layer is a LED package, characterized in that made of a metal having a higher melting point than the copper. 청구항 1 또는 청구항 2에 있어서,The method according to claim 1 or 2, 상기 금속 코팅층은 파라듐(Pd), 니켈(Ni), 크롬(Cr), 백금(Pt) 및 그것들의 합금 중 어느 하나로 이루어진 것을 특징으로 하는 LED 패키지.The metal coating layer is an LED package, characterized in that made of any one of palladium (Pd), nickel (Ni), chromium (Cr), platinum (Pt) and their alloys. 청구항 1에 있어서,The method according to claim 1, 상기 코어부 대 상기 금속 코팅층의 두께 비가 150~400 대 1로 정해지는 것을 특징으로 하는 LED 패키지.An LED package, characterized in that the thickness ratio of the core portion to the metal coating layer is set to 150 ~ 400 to 1.
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