JP2007173875A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2007173875A
JP2007173875A JP2007083928A JP2007083928A JP2007173875A JP 2007173875 A JP2007173875 A JP 2007173875A JP 2007083928 A JP2007083928 A JP 2007083928A JP 2007083928 A JP2007083928 A JP 2007083928A JP 2007173875 A JP2007173875 A JP 2007173875A
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light emitting
emitting element
light
phosphor
base
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Hiroki Mori
裕樹 森
Nobuyuki Takehashi
信之 竹橋
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Abstract

<P>PROBLEM TO BE SOLVED: To improve the efficiency of wavelength conversion of light generated by a light emitting element. <P>SOLUTION: A device includes: a light emitting element 5; mounting part 1a made of a metal material, of the light emitting element 5; a light reflecting surface 2b made of a metal material and surrounding the light emitting element 5; and a phosphor layer 3a surrounding the upper surface and the side surface of the light emitting element 5 and partly provided to the surrounding of the light emitting element 5 in a space surrounded by the light reflecting surface 2b and the mounting part 1a. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光素子によって発生された光を蛍光体で波長変換し外部に放射する発光装置に関するものである。   The present invention relates to a light emitting device for converting the wavelength of light generated by a light emitting element with a phosphor and radiating the light to the outside.

従来の発光ダイオード（ＬＥＤ）等の発光素子15から発光される近紫外線光や青色光等の光を赤色，緑色，青色，黄色等の複数の蛍光体で長波長変換して白色発光する発光装置を図３に示す。図３において、発光装置は、上側主面の中央部に発光素子15を載置するための載置部11ａを有し、載置部11ａやその周辺から発光装置の内外を電気的に導通接続するリード端子やメタライズ配線等からなる配線導体（図示せず）が形成された絶縁体からなる基体11と、基体11上面に接着固定され、上側開口が下側開口より大きい貫通孔12ａが形成されているとともに、内周面が発光素子15が発光する光を反射する反射面12ｂとされている枠状の反射部材12と、反射部材12の内側に充填され発光素子15が発光する光を励起し長波長変換する蛍光体を含有した透明樹脂13と、載置部11ａに載置固定された発光素子15とから主に構成されている。   A light emitting device that emits white light by converting long wavelengths of light such as near ultraviolet light and blue light emitted from a light emitting element 15 such as a conventional light emitting diode (LED) into a long wavelength with a plurality of phosphors such as red, green, blue, and yellow Is shown in FIG. In FIG. 3, the light-emitting device has a mounting portion 11a for mounting the light-emitting element 15 at the center of the upper main surface, and electrically connects the inside and outside of the light-emitting device from the mounting portion 11a and its periphery. A base 11 made of an insulator on which wiring conductors (not shown) made of lead terminals, metallized wiring, etc. are formed, and a through hole 12a that is bonded and fixed to the upper surface of the base 11 and whose upper opening is larger than the lower opening. In addition, a frame-like reflecting member 12 whose inner peripheral surface is a reflecting surface 12b that reflects light emitted from the light emitting element 15, and excitation of light emitted from the light emitting element 15 filled inside the reflecting member 12 It is mainly composed of a transparent resin 13 containing a phosphor for long wavelength conversion and a light emitting element 15 mounted and fixed on the mounting portion 11a.

基体11は、酸化アルミニウム質焼結体（アルミナセラミックス）や窒化アルミニウム質焼結体，ムライト質焼結体，ガラスセラミックス等のセラミックス、またはエポキシ樹脂等の樹脂から成る。基体11がセラミックスから成る場合、その上面に配線導体がタングステン（Ｗ），モリブデン（Ｍｏ）−マンガン（Ｍｎ）等から成る金属ペーストを高温で焼成して形成される。また、基体11が樹脂から成る場合、銅（Ｃｕ）や鉄（Ｆｅ）−ニッケル（Ｎｉ）合金等から成るリード端子がモールド成型されて基体11の内部に設置固定される。   The substrate 11 is made of an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, ceramics such as glass ceramics, or a resin such as epoxy resin. When the substrate 11 is made of ceramic, the wiring conductor is formed on its upper surface by firing a metal paste made of tungsten (W), molybdenum (Mo) -manganese (Mn), etc. at a high temperature. When the base 11 is made of a resin, lead terminals made of copper (Cu), iron (Fe) -nickel (Ni) alloy, etc. are molded and fixed inside the base 11.

また、反射部材12は、上側開口が下側開口より大きい貫通孔12ａが形成されるとともに内周面に光を反射する反射面12ｂが設けられた枠状となっている。具体的には、アルミニウム（Ａｌ）やＦｅ−Ｎｉ−コバルト（Ｃｏ）合金等の金属、アルミナセラミックス等のセラミックスまたはエポキシ樹脂等の樹脂から成り、切削加工や金型成型または押し出し成型等の成形技術により形成される。   The reflecting member 12 has a frame shape in which a through hole 12a having an upper opening larger than the lower opening is formed and a reflecting surface 12b for reflecting light is provided on the inner peripheral surface. Specifically, it consists of metals such as aluminum (Al) and Fe-Ni-cobalt (Co) alloys, ceramics such as alumina ceramics or resins such as epoxy resins, and molding technologies such as cutting, die molding or extrusion molding. It is formed by.

さらに、反射部材12の反射面12ｂは、貫通孔12ａの内周面を研磨して平坦化することにより、あるいは、貫通孔12ａの内周面にＡｌ等の金属を蒸着法やメッキ法により被着することにより形成される。そして、反射部材12は、半田，銀（Ａｇ）ロウ等のロウ材または樹脂接着材等の接合材により、載置部11ａを反射部材12の内周面で取り囲むように基体11の上面に接合される。   Further, the reflecting surface 12b of the reflecting member 12 is coated by polishing or flattening the inner peripheral surface of the through hole 12a or by depositing a metal such as Al on the inner peripheral surface of the through hole 12a by vapor deposition or plating. It is formed by wearing. The reflecting member 12 is bonded to the upper surface of the base 11 by a soldering material such as solder, silver (Ag) solder, or a bonding material such as a resin adhesive so as to surround the mounting portion 11a with the inner peripheral surface of the reflecting member 12. Is done.

そして、載置部11ａの周辺に配置した配線導体と発光素子15とをボンディングワイヤや金属ボール等の電気接続手段16を介して電気的に接続し、しかる後、蛍光体を含有するエポキシ樹脂やシリコーン樹脂等の透明樹脂13をディスペンサー等の注入機で発光素子15を覆うように反射部材12の内部に充填しオーブンで熱硬化させることで、発光素子15からの光を蛍光体により長波長変換し所望の波長スペクトルを有する光を取り出せる発光装置となし得る。
特開２００３−３７２９８号公報 Then, the wiring conductor arranged in the periphery of the mounting portion 11a and the light emitting element 15 are electrically connected through the electrical connection means 16 such as a bonding wire or a metal ball, and then an epoxy resin containing a phosphor or Transparent light 13 such as silicone resin is filled in the reflective member 12 so as to cover the light emitting element 15 with an injection machine such as a dispenser, and is thermally cured in an oven, so that the light from the light emitting element 15 is converted into a long wavelength by a phosphor. Thus, a light emitting device capable of extracting light having a desired wavelength spectrum can be obtained.
JP 2003-37298 A

近年、発光装置の放射強度をさらに高めることが望まれている。しかしながら、上記従来の発光装置においては、放射強度を高めるために発光素子15に入力する電流値をより大きくすると、発光素子15の発光強度が限界に近づいてばらつき易くなり、安定した放射強度が得られないという問題点を有していた。   In recent years, it has been desired to further increase the radiation intensity of the light emitting device. However, in the above conventional light emitting device, if the current value input to the light emitting element 15 is increased to increase the radiation intensity, the light emission intensity of the light emitting element 15 tends to vary near the limit, and a stable radiation intensity can be obtained. It had the problem that it was not possible.

また、発光素子15から下方に発光される光は反射部材12に良好に照射されず、光反射率の比較的低い基体11の上面や基体11と反射部材12との接合部に照射されるため、これらの部位で光が吸収されて発光素子15から発光される光の全てを高い反射率で反射させることができず、発光装置からの放射強度や軸上光度、輝度、演色性が低下しやすいという問題点を有していた。   In addition, light emitted downward from the light emitting element 15 is not satisfactorily applied to the reflecting member 12, and is applied to the upper surface of the base 11 having a relatively low light reflectivity and the joint between the base 11 and the reflecting member 12. The light absorbed by these parts and not all of the light emitted from the light emitting element 15 can be reflected with high reflectivity, and the radiation intensity, axial luminous intensity, luminance, and color rendering from the light emitting device are reduced. It had the problem of being easy.

また、発光素子15を被覆するとともに発光素子15からの光を波長変換するための蛍光体14を含有した透明樹脂13において、蛍光体14の含有率を上げて波長変換の効率を向上させようとすると、光が蛍光体14によって妨害され易くなるため、放射強度を向上できないという問題点を有していた。   Further, in the transparent resin 13 that covers the light emitting element 15 and contains the phosphor 14 for wavelength conversion of light from the light emitting element 15, the content of the phosphor 14 is increased to improve the efficiency of wavelength conversion. Then, since the light is easily disturbed by the phosphor 14, the radiation intensity cannot be improved.

また逆に、蛍光体14の含有率を下げると、蛍光体で変換されずに透過する光が多くなって所望の波長の光が得られず、その結果、放射強度の向上ができないという問題点を有していた。   Conversely, if the content of the phosphor 14 is lowered, the amount of light that is transmitted without being converted by the phosphor increases and light having a desired wavelength cannot be obtained, and as a result, the radiation intensity cannot be improved. Had.

さらに、発光素子15から発生した熱が基体11を伝達して反射部材12に伝わり易く、反射部材12と基体11との熱膨張差によって反射部材12が熱膨張して変形し、放射角度がばらついたり放射強度が低下するという問題点も有していた。   Furthermore, heat generated from the light emitting element 15 is easily transmitted to the reflecting member 12 through the base 11, and the reflecting member 12 is thermally expanded and deformed due to a difference in thermal expansion between the reflecting member 12 and the base 11, and the radiation angle varies. There is also a problem that the radiation intensity decreases.

したがって、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、発光素子の発光する光を蛍光体により効率よく波長変換するとともに放射強度を高くすることにより、軸上光度や輝度，演色性等の光特性に優れた発光装置を提供することである。   Therefore, the present invention has been completed in view of the above-mentioned conventional problems, and the purpose thereof is to convert the light emitted from the light-emitting element into a wavelength efficiently by using a phosphor and to increase the radiation intensity. The object is to provide a light emitting device having excellent light characteristics such as luminous intensity, luminance and color rendering.

本発明は、発光素子と、金属材料からなる前記発光素子の載置部と、金属材料からなり、前記発光素子を囲んでいる光反射面と、前記発光素子の上面および側面を取り囲んでおり、前記光反射面および前記載置部に囲まれた空間において発光素子の周囲に部分的に設けられた蛍光体層とを備えている。   The present invention includes a light emitting element, a mounting portion of the light emitting element made of a metal material, a light reflecting surface that is made of a metal material and surrounds the light emitting element, and surrounds an upper surface and a side surface of the light emitting element, And a phosphor layer partially provided around the light emitting element in a space surrounded by the light reflecting surface and the mounting portion.

本発明は、発光素子の上面および側面を取り囲んでおり、光反射面および載置部に囲まれた空間において発光素子の周囲に部分的に設けられた蛍光体層を備えていることにより、発光素子によって発生された光の波長の変換効率を向上させることができる。   The present invention surrounds the upper surface and the side surface of the light emitting element, and includes a phosphor layer partially provided around the light emitting element in a space surrounded by the light reflecting surface and the mounting portion, thereby emitting light. The conversion efficiency of the wavelength of light generated by the element can be improved.

本発明の発光装置について以下に詳細に説明する。図１は本発明の発光装置の実施の形態の一例を示す断面図である。この図において、１は基体、２は反射部材、３は透光性部材、４は蛍光体であり、主としてこれらで発光素子５の発光を方向性をもって外部に発光させ得る発光装置が構成される。   The light emitting device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a light emitting device of the present invention. In this figure, 1 is a base, 2 is a reflecting member, 3 is a translucent member, and 4 is a phosphor, and these constitute a light emitting device that can emit light emitted from the light emitting element 5 to the outside with directionality. .

本発明の発光装置は、上側主面から突出した発光素子５の載置部１ａを有する基体１と、基体１の上側主面に載置部１ａを囲繞するように接合された、内周面が発光素子５が発光する光を反射する反射面とされている枠状の反射部材２と、反射部材２の内側に発光素子５を覆うように設けられる透光性部材３とを具備しており、発光素子５は、その発光部が反射面の下端よりも上側に位置しており、透光性部材３は、発光部よりも上側に位置する上層部３ａと発光部よりも下側に位置する下層部３ｂとの二層から成り、上層部３ａに発光素子５が発光する光を波長変換する蛍光体４を含有している。   The light emitting device of the present invention includes a base 1 having a mounting portion 1a for the light emitting element 5 protruding from the upper main surface, and an inner peripheral surface joined to the upper main surface of the base 1 so as to surround the mounting portion 1a. Includes a frame-shaped reflecting member 2 that is a reflecting surface that reflects light emitted from the light emitting element 5, and a translucent member 3 that is provided inside the reflecting member 2 so as to cover the light emitting element 5. The light emitting element 5 has a light emitting portion located above the lower end of the reflecting surface, and the translucent member 3 is located above the light emitting portion and the upper layer portion 3a located above the light emitting portion. It consists of two layers with the lower layer part 3b located, and contains the fluorescent substance 4 which wavelength-converts the light which the light emitting element 5 light-emits in the upper layer part 3a.

本発明における基体１は、アルミナセラミックスや窒化アルミニウム質焼結体，ムライト質焼結体，ガラスセラミックス等のセラミックス、または、エポキシ樹脂等の樹脂から成る。また、基体１は、上側主面に、発光素子５を載置する、上側主面から突出した載置部１ａを有している。   The substrate 1 in the present invention is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, or resin such as epoxy resin. Moreover, the base body 1 has a mounting portion 1a that protrudes from the upper main surface, on which the light emitting element 5 is mounted, on the upper main surface.

このような載置部１ａは、基体１の上側主面に、アルミナセラミックスや窒化アルミニウム質焼結体，ムライト質焼結体，ガラスセラミックス等のセラミックス、Ｆｅ−Ｎｉ−Ｃｏ合金やＣｕ−Ｗ等の金属、または、エポキシ樹脂等の樹脂から成る凸部１ｂを基体１の上面にロウ材や接着剤等の接合材により取着することによって、または、基体１の上面に凸部１ｂを基体１と一体として形成しておいてもよい。さらには基体１の中央部に設けた貫通孔に、上記のセラミックス，金属または樹脂から成る凸部１ｂをその上側が基体１の上面から突出するように嵌着して取着することによって設けてもよい。   Such a mounting portion 1a is formed on the upper main surface of the substrate 1 with ceramics such as alumina ceramics, aluminum nitride sintered body, mullite sintered body, glass ceramics, Fe-Ni-Co alloy, Cu-W, or the like. The protrusion 1b made of a metal or epoxy resin is attached to the upper surface of the substrate 1 with a bonding material such as a brazing material or an adhesive, or the protrusion 1b is mounted on the upper surface of the substrate 1. And may be formed as one piece. Further, the protrusion 1b made of the above-mentioned ceramic, metal or resin is provided in the through hole provided in the central portion of the base 1 by fitting it so that the upper side protrudes from the upper surface of the base 1 and attaching it. Also good.

このように基体１に凸部１ｂを設けることによって、発光素子５から下方に発光される光を反射部材２の反射面に良好に照射させることができ、この反射面できわめて良好に外部に反射させることができる。また、発光素子５から発生した熱が基体１に伝わっても、載置部１ａが突出しているため、載置部１ａと反射部材２との間の距離が大きくなるとともに突出した基体１と透光性部材３との接触面積が大きくなって放熱性が向上し、反射部材２に熱が伝達されるのを有効に抑制することができる。その結果、反射部材２と基体１との熱膨張差によって反射部材２が変形するのを有効に抑制することができる。   Thus, by providing the convex part 1b in the base | substrate 1, the light emitted downward from the light emitting element 5 can be favorably irradiated to the reflecting surface of the reflecting member 2, and the reflecting surface reflects the outside very well. Can be made. Further, even if the heat generated from the light emitting element 5 is transmitted to the base body 1, the mounting portion 1 a protrudes. Therefore, the distance between the mounting portion 1 a and the reflecting member 2 is increased and the protruding base body 1 and the transparent body 1 are transparent. The contact area with the optical member 3 is increased, heat dissipation is improved, and heat can be effectively suppressed from being transmitted to the reflecting member 2. As a result, it is possible to effectively suppress deformation of the reflecting member 2 due to a difference in thermal expansion between the reflecting member 2 and the base 1.

好ましくは、凸部１ｂと基体１とを同じ材質にするのがよい。これにより、載置部1ａと基体1との熱膨張差を小さくすることができ、載置部１ａに歪みが生じて発光素子５の位置がずれ、発光効率が低下するのを有効に抑制できる。   Preferably, the protrusion 1b and the base 1 are made of the same material. Thereby, the difference in thermal expansion between the mounting portion 1a and the base 1 can be reduced, and it is possible to effectively suppress the occurrence of distortion in the mounting portion 1a, the displacement of the light emitting element 5 and the reduction in light emission efficiency. .

また、凸部１ｂが基体１と一体となっている場合、例えば、凸部１ｂや基体１と成るセラミックグリーンシートを積層して同時焼成することによって、切削加工等の金属加工方法によって、または、射出成型等で樹脂をモールド成型することによって作製することができる。   Further, when the convex portion 1b is integrated with the base body 1, for example, by laminating ceramic green sheets to be the convex portion 1b and the base body 1 and firing them simultaneously, by a metal processing method such as cutting, or It can be produced by molding a resin by injection molding or the like.

載置部１ａには、発光素子５が電気的に接続されるための電気接続用パターン（図示せず）が形成されている。この電気接続用パターンが基体１内部に形成された配線層（図示せず）を介して発光装置の外表面に導出されて外部電気回路基板に接続されることにより、発光素子５と外部電気回路とが電気的に接続されることとなる。   On the mounting portion 1a, an electrical connection pattern (not shown) for electrically connecting the light emitting element 5 is formed. The electrical connection pattern is led out to the outer surface of the light emitting device through a wiring layer (not shown) formed inside the base 1 and connected to the external electrical circuit board, whereby the light emitting element 5 and the external electrical circuit are connected. Are electrically connected to each other.

発光素子５を電気接続用パターンに接続する方法としては、ワイヤボンディングを介して接続する方法、または、発光素子５の下面で半田バンプ等の電気接続手段６により接続するフリップチップボンディング方式を用いた方法等が用いられる。好ましくは、フリップチップボンディング方式により接続するのがよい。これにより、電気接続用パターンを発光素子５の直下に設けることができるため、発光素子５の周辺の基体１の上面に電気接続用パターンを設けるためのスペースを設ける必要がなくなる。よって、発光素子５から発光された光がこの基体１の電気接続用パターン用のスペースで吸収されて軸上光度が低下するのを有効に抑制することができる。   As a method of connecting the light emitting element 5 to the electrical connection pattern, a method of connecting through wire bonding or a flip chip bonding method in which the lower surface of the light emitting element 5 is connected by electrical connection means 6 such as a solder bump is used. A method or the like is used. Preferably, the connection is made by a flip chip bonding method. Thereby, since the electrical connection pattern can be provided immediately below the light emitting element 5, it is not necessary to provide a space for providing the electrical connection pattern on the upper surface of the base 1 around the light emitting element 5. Therefore, it is possible to effectively suppress the light emitted from the light emitting element 5 from being absorbed in the space for the electrical connection pattern of the substrate 1 and the on-axis luminous intensity being lowered.

この電気接続用パターンは、例えば、Ｗ，Ｍｏ，Ｃｕ，Ａｇ等の金属粉末のメタライズ層を基体１の表面や内部に形成することによって、Ｆｅ−Ｎｉ−Ｃｏ合金等のリード端子を基体１に埋設することによって、または、配線導体が形成された絶縁体から成る入出力端子を基体１に設けた貫通孔に嵌着接合させることによって設けられる。   The electrical connection pattern is formed, for example, by forming a metallized layer of a metal powder such as W, Mo, Cu, or Ag on the surface or inside of the base 1 so that lead terminals such as Fe-Ni-Co alloy are formed on the base 1. It is provided by embedding or by fitting and joining an input / output terminal made of an insulator on which a wiring conductor is formed in a through hole provided in the base 1.

なお、電気接続用パターンの露出する表面には、Ｎｉや金（Ａｕ）等の耐食性に優れる金属を１〜20μｍ程度の厚さで被着させておくのが良く、電気接続用パターンの酸化腐食を有効に防止し得るともに、発光素子５と電気接続用パターンとの接続を強固にし得る。したがって、電気接続用パターンの露出表面には、例えば、厚さ１〜10μｍ程度のＮｉメッキ層と厚さ0.1〜３μｍ程度のＡｕメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのがより好ましい。   The exposed surface of the electrical connection pattern should be coated with a metal having excellent corrosion resistance, such as Ni or gold (Au), with a thickness of about 1 to 20 μm. Can be effectively prevented, and the connection between the light emitting element 5 and the electrical connection pattern can be strengthened. Therefore, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the exposed surface of the electrical connection pattern by an electrolytic plating method or an electroless plating method. More preferably.

また、基体１の上面には、反射部材２が半田，Ａｇロウ等のロウ材やエポキシ樹脂等の接着剤等の接合材により取着される。反射部材２は、中央部に貫通孔２ａが形成されているとともに内周面が発光素子５が発光する光を反射する反射面２ｂとされている。   Further, the reflecting member 2 is attached to the upper surface of the substrate 1 by a bonding material such as solder, a brazing material such as Ag brazing, or an adhesive such as an epoxy resin. The reflection member 2 has a through hole 2a formed at the center and an inner peripheral surface that is a reflection surface 2b that reflects light emitted from the light emitting element 5.

反射部材２は、反射部材２に対して切削加工や金型成形等を行うことにより形成される。あるいは、貫通孔２ａの内周面に、例えば、メッキや蒸着等によりＡｌ，Ａｇ，Ａｕ，白金（Ｐｔ），チタン（Ｔｉ），クロム（Ｃｒ），Ｃｕ等の高反射率の金属薄膜を形成することにより反射面２ｂを形成してもよい。なお、反射面２ｂがＡｇやＣｕ等の酸化により変色し易い金属からなる場合には、その表面に、例えば厚さ１〜10μｍ程度のＮｉメッキ層と厚さ0.1〜３μｍ程度のＡｕメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのが良い。これにより反射面２ｂの耐腐食性が向上する。   The reflecting member 2 is formed by performing cutting or mold forming on the reflecting member 2. Alternatively, a highly reflective metal thin film such as Al, Ag, Au, platinum (Pt), titanium (Ti), chromium (Cr), or Cu is formed on the inner peripheral surface of the through hole 2a by, for example, plating or vapor deposition. By doing so, the reflective surface 2b may be formed. When the reflecting surface 2b is made of a metal that is easily discolored by oxidation such as Ag or Cu, an Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are formed on the surface. Is preferably deposited sequentially by electrolytic plating or electroless plating. Thereby, the corrosion resistance of the reflective surface 2b improves.

また、反射面２ｂ表面の算術平均粗さＲａは、0.004〜４μｍであるのが良く、これにより、反射面２ｂが発光素子５や蛍光体４の光を良好に反射し得る。Ｒａが４μｍを超えると、発光素子５の光を均一に反射させ得ず、発光装置の内部で乱反射する。一方、0.004μｍ未満では、そのような面を安定かつ効率良く形成することが困難となる傾向にある。   Further, the arithmetic average roughness Ra on the surface of the reflecting surface 2b is preferably 0.004 to 4 μm, whereby the reflecting surface 2b can favorably reflect the light of the light emitting element 5 and the phosphor 4. When Ra exceeds 4 μm, the light of the light emitting element 5 cannot be reflected uniformly, and is irregularly reflected inside the light emitting device. On the other hand, if it is less than 0.004 μm, it tends to be difficult to form such a surface stably and efficiently.

反射面２ｂは、例えば、縦断面形状が、上側に向かうにともなって外側に広がった図１，２に示すような直線状の傾斜面、上側に向かうにともなって外側に広がった曲面状の傾斜面、あるいは矩形状の面等の形状が挙げられる。   The reflecting surface 2b has, for example, a linear inclined surface as shown in FIGS. 1 and 2 whose longitudinal cross-sectional shape spreads outward as it goes upward, and a curved slope that spreads outward as it goes upward Examples of the shape include a surface and a rectangular surface.

反射部材２は、基体１の上面の凸部１ｂ以外のいかなる部位に取着されてもよいが、発光素子５の周囲に所望の面精度、例えば、発光装置の縦断面において、発光素子５を間に挟んで発光素子５の両側に設けられた反射面２ｂが対称になっている状態で反射面２ｂが設けられるように取着されるのがよい。これにより、発光素子５からの光を蛍光体４で波長変換して外部へ直接放射させるだけでなく、発光素子５から横方向等に発光された光や蛍光体４から下側に放出された光を反射面２ｂで均一にむらなく反射させることができ、軸上光度および輝度さらには演色性等を効果的に向上させることができる。   The reflecting member 2 may be attached to any part other than the convex portion 1b on the upper surface of the substrate 1, but the light emitting element 5 is disposed around the light emitting element 5 with a desired surface accuracy, for example, in the longitudinal section of the light emitting device. It is preferable that the reflective surface 2b is provided so as to be provided in a state where the reflective surfaces 2b provided on both sides of the light emitting element 5 are symmetrically sandwiched therebetween. As a result, the light from the light emitting element 5 is not only directly converted to the wavelength by the phosphor 4 and directly emitted to the outside, but also the light emitted from the light emitting element 5 in the lateral direction or the like is emitted downward from the phosphor 4. The light can be reflected uniformly and uniformly on the reflecting surface 2b, and the axial luminous intensity, luminance, color rendering properties, and the like can be effectively improved.

特に図２に示すように、反射部材２が凸部１ｂに近接しているほど上記の効果が顕著に現れる。これにより、載置部１ａを有する凸部１ｂの周囲を反射部材２で取り囲むことによって、より多くの光を反射させることができ、より高い軸上光度を得ることが可能となる。   In particular, as shown in FIG. 2, the above-described effect appears more prominently as the reflecting member 2 is closer to the convex portion 1 b. Thereby, by enclosing the circumference | surroundings of the convex part 1b which has the mounting part 1a with the reflection member 2, more light can be reflected and it becomes possible to obtain a higher on-axis luminous intensity.

また、載置部１ａに搭載された発光素子５の発光部は、反射面２ｂの下端２ｃよりも高い位置になるように設けられている。すなわち、発光素子５の発光部の基体１の上側主面からの高さは、貫通孔２ａの下側開口部の周囲の反射部材２の厚さＬよりも大きい。これにより、発光素子５が発光した光が、反射部材２の加工時に反射面２ｂの下端２ｃに発生したバリ等や反射部材２を基体１に接合する際にはみ出したロウ材によって、乱反射したり吸収されたりするのを有効に防止できるとともに、発光素子５が発光する光を透光性部材３の表面近傍の多量の蛍光体４に照射することができ、波長変換効率を非常に良好なものとし得る。   Moreover, the light emission part of the light emitting element 5 mounted on the mounting part 1a is provided so that it may become a position higher than the lower end 2c of the reflective surface 2b. That is, the height of the light emitting portion of the light emitting element 5 from the upper main surface of the base 1 is larger than the thickness L of the reflecting member 2 around the lower opening of the through hole 2a. Thereby, the light emitted from the light emitting element 5 is diffusely reflected by burrs generated at the lower end 2c of the reflecting surface 2b during the processing of the reflecting member 2 or by the brazing material protruding when the reflecting member 2 is joined to the base 1. In addition to being able to effectively prevent absorption, it is possible to irradiate a large amount of phosphor 4 in the vicinity of the surface of the translucent member 3 with light emitted from the light emitting element 5, and to have very good wavelength conversion efficiency. It can be.

本発明の透光性部材３は、エポキシ樹脂やシリコーン樹脂等の透明樹脂から成る。透光性部材３は、ディスペンサー等の注入機で発光素子５を覆うように反射部材２の内部に充填され、オーブン等で熱硬化されることで、発光素子５からの光を蛍光体４により波長変換し所望の波長スペクトルを有する光を取り出すことができる。   The translucent member 3 of the present invention is made of a transparent resin such as an epoxy resin or a silicone resin. The translucent member 3 is filled in the reflection member 2 so as to cover the light emitting element 5 with an injection machine such as a dispenser, and is thermally cured in an oven or the like, so that light from the light emitting element 5 is transmitted by the phosphor 4. Wavelength conversion can be performed to extract light having a desired wavelength spectrum.

ここで、透光性部材３は、発光部よりも上側に位置する上層部３ａと発光部よりも下側に位置する下層部３ｂとの二層から成り、上層部３ａに発光素子５が発光する光を波長変換する蛍光体を含有している。   Here, the translucent member 3 is composed of two layers of an upper layer portion 3a located above the light emitting portion and a lower layer portion 3b located below the light emitting portion, and the light emitting element 5 emits light on the upper layer portion 3a. It contains a phosphor that converts the wavelength of light to be converted.

これにより、発光素子５から上方に発光される光が透過する蛍光体４を含む透光性部材３の上層部３ａにおける行路長と、発光素子５から下方に発光され反射部材２で反射する光が透過する蛍光体４を含む透光性部材３の上層部３ａにおける行路長とを近似させることができ、発光素子５から発光されるすべての光に対する波長変換効率を一定にして色むらや強度むらが生じるのを有効に防止できる。   Thereby, the path length in the upper layer portion 3a of the translucent member 3 including the phosphor 4 through which the light emitted upward from the light emitting element 5 is transmitted, and the light emitted downward from the light emitting element 5 and reflected by the reflecting member 2 The path length in the upper layer portion 3a of the translucent member 3 including the phosphor 4 through which light is transmitted can be approximated, and the wavelength conversion efficiency for all the light emitted from the light emitting element 5 is made constant, and the color unevenness and intensity Unevenness can be effectively prevented.

さらに、発光素子５から下方に発光された光は透光性部材３中を透過する光路長が長くなるものの、透光性部材３の下層部３ｂにおいては蛍光体４を含有しないので、光が蛍光体４によって妨害されるのを防止でき、発光装置からの放射強度が低下するのを防止でき、放射強度をきわめて高くすることができる。   Further, the light emitted downward from the light emitting element 5 has a longer optical path length through the translucent member 3, but the lower layer 3 b of the translucent member 3 does not contain the phosphor 4. Interference with the phosphor 4 can be prevented, radiation intensity from the light emitting device can be prevented from decreasing, and radiation intensity can be made extremely high.

また、発光素子５の発光部と載置部１ａの上面との間の距離が0.1ｍｍ以下である場合、載置部１ａの上面に透光性部材３の上層部３ａと下層部３ｂとの境界が位置していても、発光部と載置部１ａの上面との間に位置する上層部３ａの厚みは非常に薄く、この部分を透過する光が上層部３ａの蛍光体４による波長変換率は非常に小さい。よって、発光部に透光性部材３の上層部３ａと下層部３ｂとの境界が位置している場合と同様の効果を得ることができ、載置部１ａの上面に透光性部材３の上層部３ａと下層部３ｂとの境界が位置していてもよい。この構成により、透光性部材３の注入の作業性を効率の良いものとすることができる。   Moreover, when the distance between the light emission part of the light emitting element 5 and the upper surface of the mounting part 1a is 0.1 mm or less, the upper surface part 3a and the lower layer part 3b of the translucent member 3 are formed on the upper surface of the mounting part 1a. Even if the boundary is located, the thickness of the upper layer portion 3a located between the light emitting portion and the upper surface of the mounting portion 1a is very thin, and the light transmitted through this portion is converted by the phosphor 4 in the upper layer portion 3a. The rate is very small. Therefore, the same effect as the case where the boundary of the upper layer part 3a and the lower layer part 3b of the translucent member 3 is located in the light emission part can be acquired, and the translucent member 3 is provided on the upper surface of the mounting part 1a. The boundary between the upper layer part 3a and the lower layer part 3b may be located. With this configuration, the workability of injection of the translucent member 3 can be made efficient.

また、透光性部材３の上面は図１，２に示すように上に凸の形状になっているのがよい。これにより、発光素子５から斜め上方に放出された光に対しても発光部と透光性部材３の表面との間隔が長くなるのを防止することができ、より放射強度を高めることができる。   The upper surface of the translucent member 3 is preferably convex upward as shown in FIGS. Thereby, it is possible to prevent the interval between the light emitting portion and the surface of the translucent member 3 from increasing even with respect to light emitted obliquely upward from the light emitting element 5 and to further increase the radiation intensity. .

なお、本発明は以上の実施の形態の例に限定されず、本発明の要旨を逸脱しない範囲内であれば種々の変更を行なうことは何等支障ない。   In addition, this invention is not limited to the example of the above embodiment, If it is in the range which does not deviate from the summary of this invention, it will not interfere at all.

例えば、放射強度の向上のために基体１に発光素子５を複数設けてしても良い。また反射面２ｂの角度や、反射面２ｂ上端から透光性部材３の上面までの距離を任意に調整することも可能であり、これにより、補色域を設けることによりさらに良好な演色性を得ることができる。   For example, a plurality of light emitting elements 5 may be provided on the substrate 1 in order to improve the radiation intensity. It is also possible to arbitrarily adjust the angle of the reflecting surface 2b and the distance from the upper end of the reflecting surface 2b to the upper surface of the translucent member 3, thereby obtaining a better color rendering by providing a complementary color gamut. be able to.

本発明の発光装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the light-emitting device of this invention. 本発明の発光装置の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the light-emitting device of this invention. 従来の発光装置を示す断面図である。It is sectional drawing which shows the conventional light-emitting device.

符号の説明Explanation of symbols

１：基体
１ａ：載置部
２：反射部材
２ｂ：反射面
２ｃ：反射面の下端
３：透光性部材
３ａ：上層部
３ｂ：下層部
４：蛍光体
５：発光素子 1: Base 1a: Placement part 2: Reflecting member 2b: Reflecting surface 2c: Lower end of reflecting surface 3: Translucent member 3a: Upper layer part 3b: Lower layer part 4: Phosphor 5: Light emitting element

Claims (1)

発光素子と、
金属材料からなる前記発光素子の載置部と、
金属材料からなり、前記発光素子を囲んでいる光反射面と、
前記発光素子の上面および側面を取り囲んでおり、前記光反射面および前記載置部に囲まれた空間において発光素子の周囲に部分的に設けられた蛍光体層と、
を備えた発光装置。 A light emitting element;
A mounting portion of the light emitting element made of a metal material;
A light reflecting surface made of a metal material and surrounding the light emitting element;
A phosphor layer that surrounds the upper surface and the side surface of the light emitting element, and is provided partially around the light emitting element in a space surrounded by the light reflecting surface and the mounting portion;
A light emitting device comprising:
JP2007083928A 2007-03-28 2007-03-28 Light emitting device Pending JP2007173875A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105343A (en) * 2007-10-25 2009-05-14 Panasonic Electric Works Co Ltd Light emitting device
JP2010537411A (en) * 2007-08-20 2010-12-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic semiconductor module and manufacturing method thereof
JP2011258657A (en) * 2010-06-07 2011-12-22 Toshiba Corp Semiconductor light-emitting device and method for producing the same
US9698312B2 (en) 2013-12-17 2017-07-04 Nichia Corporation Resin package and light emitting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010537411A (en) * 2007-08-20 2010-12-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic semiconductor module and manufacturing method thereof
KR101501795B1 (en) * 2007-08-20 2015-03-11 오스람 옵토 세미컨덕터스 게엠베하 Opto-electronic semiconductor module and method for the production thereof
US9564555B2 (en) 2007-08-20 2017-02-07 Osram Opto Semiconductors Gmbh Opto-electronic semiconductor module and method for the production thereof
JP2009105343A (en) * 2007-10-25 2009-05-14 Panasonic Electric Works Co Ltd Light emitting device
JP2011258657A (en) * 2010-06-07 2011-12-22 Toshiba Corp Semiconductor light-emitting device and method for producing the same
US9698312B2 (en) 2013-12-17 2017-07-04 Nichia Corporation Resin package and light emitting device

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