KR20090004600A - 전자 모듈 및 전자 모듈의 제조 방법 - Google Patents
전자 모듈 및 전자 모듈의 제조 방법 Download PDFInfo
- Publication number
- KR20090004600A KR20090004600A KR1020080061897A KR20080061897A KR20090004600A KR 20090004600 A KR20090004600 A KR 20090004600A KR 1020080061897 A KR1020080061897 A KR 1020080061897A KR 20080061897 A KR20080061897 A KR 20080061897A KR 20090004600 A KR20090004600 A KR 20090004600A
- Authority
- KR
- South Korea
- Prior art keywords
- ground electrode
- insulating layer
- cutting
- electronic module
- electronic
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
- 절연층과,상기 절연층 내에 형성되어 있으며, 상기 절연층의 측면으로부터 일부가 노출된 그라운드 전극과,상기 절연층 상에 실장된 전자 부품과,상기 전자 부품을 밀봉하는 밀봉층과,상기 밀봉층을 피복하고, 상기 그라운드 전극의 노출 부위에서 상기 그라운드 전극과 전기적으로 접속된 도전성 실드를 구비하는, 전자 모듈.
- 제 1 항에 있어서,상기 노출 부위를 갖는 그라운드 전극이, 상기 절연층의 수직 방향에 복수 존재하는, 전자 모듈.
- 제 1 항 또는 제 2 항에 있어서,상기 절연층의 측면에 있어서의 상기 그라운드 전극의 노출 부위가, 상기 절연층의 수선 방향에 대해 기울기를 갖는, 전자 모듈.
- 전자 부품을 구비하는 복수의 전자 모듈을 제조하는 방법으로서,절연층 내에 그라운드 전극을 형성하는 공정과,상기 절연층 상에, 상기 복수의 전자 모듈에 구비되는 복수의 전자 부품을 실장하는 공정과,상기 절연층 및 상기 복수의 전자 부품 상에 그 복수의 전자 부품을 밀봉하는 밀봉층을 형성하는 공정과,상기 절연층의 측면으로부터 상기 그라운드 전극의 일부가 노출되도록, 상기 절연층 및 상기 밀봉층을 절삭하는 공정과,상기 밀봉층을 피복하고, 상기 그라운드 전극의 노출 부위에서 상기 그라운드 전극과 전기적으로 접속하는 도전성 실드를 형성하는 공정과,상기 복수의 전자 모듈을 개편화하는 공정을 갖는, 전자 모듈의 제조 방법.
- 제 4 항에 있어서,상기 절연층 내에 그라운드 전극을 형성하는 공정에서는, 상기 각 전자 모듈이 형성되는 영역 중 적어도 2 개의 영역에 걸쳐 있는 그라운드 전극을 형성하고,상기 절연층 및 상기 밀봉층을 절삭하는 공정에서는, 상기 각 전자 모듈이 형성되는 영역을 획정하도록, 그리고, 상기 절연층의 측면으로부터 상기 그라운드 전극의 일부가 노출되도록, 상기 절연층 및 상기 밀봉층을 절삭하는, 전자 모듈의 제조 방법.
- 제 4 항 또는 제 5 항에 있어서,상기 그라운드 전극을 형성하는 공정에서는, 상기 그라운드 전극을 상기 절 연층의 수직 방향으로 복수 형성하고,상기 절연층 및 상기 밀봉층을 절삭하는 공정에서는, 상기 절연층의 측면으로부터 상기 복수의 그라운드 전극이 노출되도록 절삭하는, 전자 모듈의 제조 방법.
- 제 4 항 또는 제 5 항에 있어서,상기 절연층 및 상기 밀봉층을 절삭하는 공정에서는, 상기 절연층의 측면에 있어서의 상기 그라운드 전극의 노출 부위가 상기 절연층의 수선 방향에 대해 기울기를 갖도록 절삭하는, 전자 모듈의 제조 방법.
- 제 4 항 또는 제 5 항에 있어서,상기 복수의 전자 모듈을 개편화하는 공정은, 상기 절삭한 면과 반대의 면으로부터, 상기 절삭 위치까지 절삭 깊이를 형성하여 절단하는 공정을 포함하고,상기 절삭 깊이를 형성하여 절단하는 공정에서는, 상기 절연층의 바닥 단부가 상기 도전성 실드의 단면보다 내측에 위치하도록 상기 절삭 깊이를 형성하는, 전자 모듈의 제조 방법.
- 제 8 항에 있어서,상기 절삭 깊이를 형성하여 절단하는 공정에서는, 상기 절삭에 사용한 절단날보다 날 두께가 두꺼운 절단날을 사용하여 상기 절삭 깊이를 형성하는, 전자 모 듈의 제조 방법
- 제 1 항 또는 제 2 항에 있어서,상기 절연층의 바닥 단부가 상기 도전성 실드의 단면보다 내측에 위치하는, 전자 모듈.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2007-00172088 | 2007-06-29 | ||
JP2007172088 | 2007-06-29 | ||
JP2008153261A JP2009033114A (ja) | 2007-06-29 | 2008-06-11 | 電子モジュール、及び電子モジュールの製造方法 |
JPJP-P-2008-00153261 | 2008-06-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090004600A true KR20090004600A (ko) | 2009-01-12 |
KR101004275B1 KR101004275B1 (ko) | 2011-01-03 |
Family
ID=40247187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080061897A KR101004275B1 (ko) | 2007-06-29 | 2008-06-27 | 전자 모듈 및 전자 모듈의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2009033114A (ko) |
KR (1) | KR101004275B1 (ko) |
CN (1) | CN101345234B (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010085087A2 (ko) | 2009-01-20 | 2010-07-29 | 주식회사 엘지화학 | 신규한 시클로알켄 유도체 및 이를 이용한 유기전자소자 |
KR101049621B1 (ko) * | 2009-04-22 | 2011-07-14 | 다이요 유덴 가부시키가이샤 | 통신 모듈 |
KR101461156B1 (ko) * | 2012-10-12 | 2014-11-12 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이를 제조하는 방법 |
KR20150061368A (ko) * | 2013-11-27 | 2015-06-04 | 삼성전기주식회사 | 반도체 패키지 및 그의 제조 방법 |
KR20170116959A (ko) * | 2016-04-12 | 2017-10-20 | 티디케이가부시기가이샤 | 전자회로 모듈 및 그 제조방법 |
KR20200036737A (ko) * | 2018-09-28 | 2020-04-07 | 가부시기가이샤 디스코 | 반도체 패키지의 제조 방법 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010192653A (ja) | 2009-02-18 | 2010-09-02 | Panasonic Corp | 半導体装置 |
JP5565548B2 (ja) * | 2009-03-23 | 2014-08-06 | Tdk株式会社 | 樹脂封止型電子部品及びその製造方法 |
JP5416458B2 (ja) * | 2009-04-02 | 2014-02-12 | タツタ電線株式会社 | シールドおよび放熱性を有する高周波モジュールの製造方法 |
JP5463173B2 (ja) | 2010-03-12 | 2014-04-09 | 日立オートモティブシステムズ株式会社 | 角速度検出装置 |
JP2011228322A (ja) * | 2010-04-15 | 2011-11-10 | Alps Electric Co Ltd | 電子回路モジュールの製造方法及び電子回路モジュール |
US9362196B2 (en) * | 2010-07-15 | 2016-06-07 | Kabushiki Kaisha Toshiba | Semiconductor package and mobile device using the same |
CN103053021A (zh) * | 2010-08-18 | 2013-04-17 | 株式会社村田制作所 | 电子元器件及其制造方法 |
JP2012089568A (ja) * | 2010-10-15 | 2012-05-10 | Murata Mfg Co Ltd | 有機多層基板及びその製造方法 |
JP5500095B2 (ja) * | 2011-01-31 | 2014-05-21 | Tdk株式会社 | 電子回路モジュール部品及び電子回路モジュール部品の製造方法 |
CN103025137A (zh) * | 2011-09-26 | 2013-04-03 | 新科实业有限公司 | 电子部件模块及其制造方法 |
JP5517378B1 (ja) * | 2013-08-13 | 2014-06-11 | 太陽誘電株式会社 | 回路モジュール |
JP2015115552A (ja) * | 2013-12-13 | 2015-06-22 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6501461B2 (ja) * | 2014-07-30 | 2019-04-17 | シチズン電子株式会社 | メッキ膜の剥離防止方法、部品集合体および発光装置 |
JP2017017238A (ja) * | 2015-07-03 | 2017-01-19 | 株式会社ジェイデバイス | 半導体装置及びその製造方法 |
JP6757213B2 (ja) * | 2016-09-13 | 2020-09-16 | 太陽誘電株式会社 | 半導体装置の製造方法 |
US10541209B2 (en) * | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof |
WO2019156051A1 (ja) * | 2018-02-08 | 2019-08-15 | 株式会社村田製作所 | 高周波モジュール |
JP7093210B2 (ja) * | 2018-03-28 | 2022-06-29 | 株式会社ディスコ | 板状物の加工方法 |
JP7111514B2 (ja) | 2018-06-08 | 2022-08-02 | 加賀Fei株式会社 | 電子部品モジュール |
CN113543452B (zh) * | 2020-04-13 | 2022-08-16 | 宏启胜精密电子(秦皇岛)有限公司 | 线路板及其制备方法 |
CN219395186U (zh) * | 2020-06-22 | 2023-07-21 | 株式会社村田制作所 | 电子部件 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04162647A (ja) * | 1990-10-25 | 1992-06-08 | Mitsubishi Electric Corp | 半導体装置 |
IL141826A0 (en) * | 1998-09-10 | 2002-03-10 | Viasystems Group Inc | Non-circular micro-via |
JP4662324B2 (ja) * | 2002-11-18 | 2011-03-30 | 太陽誘電株式会社 | 回路モジュール |
JP4020874B2 (ja) * | 2003-03-13 | 2007-12-12 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP4073830B2 (ja) * | 2003-06-20 | 2008-04-09 | 松下電器産業株式会社 | 半導体チップ内蔵モジュールの製造方法 |
JP4614278B2 (ja) * | 2005-05-25 | 2011-01-19 | アルプス電気株式会社 | 電子回路ユニット、及びその製造方法 |
-
2008
- 2008-06-11 JP JP2008153261A patent/JP2009033114A/ja active Pending
- 2008-06-27 KR KR1020080061897A patent/KR101004275B1/ko active IP Right Grant
- 2008-06-27 CN CN2008102147611A patent/CN101345234B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010085087A2 (ko) | 2009-01-20 | 2010-07-29 | 주식회사 엘지화학 | 신규한 시클로알켄 유도체 및 이를 이용한 유기전자소자 |
KR101049621B1 (ko) * | 2009-04-22 | 2011-07-14 | 다이요 유덴 가부시키가이샤 | 통신 모듈 |
KR101461156B1 (ko) * | 2012-10-12 | 2014-11-12 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이를 제조하는 방법 |
KR20150061368A (ko) * | 2013-11-27 | 2015-06-04 | 삼성전기주식회사 | 반도체 패키지 및 그의 제조 방법 |
KR20170116959A (ko) * | 2016-04-12 | 2017-10-20 | 티디케이가부시기가이샤 | 전자회로 모듈 및 그 제조방법 |
KR20200036737A (ko) * | 2018-09-28 | 2020-04-07 | 가부시기가이샤 디스코 | 반도체 패키지의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR101004275B1 (ko) | 2011-01-03 |
JP2009033114A (ja) | 2009-02-12 |
CN101345234A (zh) | 2009-01-14 |
CN101345234B (zh) | 2011-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101004275B1 (ko) | 전자 모듈 및 전자 모듈의 제조 방법 | |
EP2009692A1 (en) | Electronic module and fabrication method thereof | |
US7514772B2 (en) | Method of manufacturing a semiconductor apparatus | |
KR100891269B1 (ko) | 반도체 장치 및 그 제조 방법 | |
US7816783B2 (en) | Resin wiring substrate, and semiconductor device and laminated semiconductor device using the same | |
US7488897B2 (en) | Hybrid multilayer substrate and method for manufacturing the same | |
US7777352B2 (en) | Semiconductor device with semiconductor device components embedded in plastic package compound | |
KR100892935B1 (ko) | 칩 내장 기판 및 칩 내장 기판의 제조방법 | |
US20080296056A1 (en) | Printed circuit board, production method therefor, electronic-component carrier board using printed circuit board, and production method therefor | |
KR101654820B1 (ko) | 감소된 도전체 공간을 가진 마이크로전자 상호접속 소자, 및 그것을 형성하는 방법 | |
JP2009218484A (ja) | 電子モジュール、および電子モジュールの製造方法 | |
CN1949467A (zh) | 无芯基板及其制造方法 | |
CN101166394A (zh) | 安装有电子元件的多层配线基板及其制造方法 | |
KR20050077270A (ko) | 상하도전층의 도통부를 갖는 반도체장치 및 그 제조방법 | |
KR20090021076A (ko) | 배선 기판, 그 제조 방법, 및 배선 기판을 가지는 반도체 장치 | |
CN101409238A (zh) | 无核层封装基板的制作方法 | |
CN103794515A (zh) | 芯片封装基板和结构及其制作方法 | |
KR100611291B1 (ko) | 회로 장치, 회로 모듈 및 회로 장치의 제조 방법 | |
US20040009629A1 (en) | Electrode forming method in circuit device and chip package and multilayer board using the same | |
JP2009027125A (ja) | 配線基板内蔵用部品及びその製造方法、配線基板 | |
US20090236727A1 (en) | Wiring substrate and method of manufacturing the same, and semiconductor device and method of manufacturing the same | |
JP4597561B2 (ja) | 配線基板およびその製造方法 | |
JP2004128230A (ja) | 電子部品実装装置とその製造方法 | |
CN111385971B (zh) | 电路基板及其制造方法 | |
CN114503790A (zh) | 内埋式电路板及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131210 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141205 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151118 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161122 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171120 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181129 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20191202 Year of fee payment: 10 |