KR20080062953A - Method for forming pattern using printing process - Google Patents

Method for forming pattern using printing process Download PDF

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Publication number
KR20080062953A
KR20080062953A KR1020060139152A KR20060139152A KR20080062953A KR 20080062953 A KR20080062953 A KR 20080062953A KR 1020060139152 A KR1020060139152 A KR 1020060139152A KR 20060139152 A KR20060139152 A KR 20060139152A KR 20080062953 A KR20080062953 A KR 20080062953A
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KR
South Korea
Prior art keywords
pattern
organic
patterns
substrate
blanket
Prior art date
Application number
KR1020060139152A
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Korean (ko)
Inventor
권오남
Original Assignee
엘지디스플레이 주식회사
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Priority to KR1020060139152A priority Critical patent/KR20080062953A/en
Publication of KR20080062953A publication Critical patent/KR20080062953A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/0057—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material where an intermediate transfer member receives the ink before transferring it on the printing material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Printing Methods (AREA)

Abstract

A method for forming patterns by using a printing mode is provided to form convex patterns on the surface of a printing roll corresponding to a location where an ink pattern will be formed, thereby simplifying a printing process. A micro pattern forming method using an off set printing mode comprises the following steps. First and second printing rolls each having first and second blankets(143) in the surface are prepared. An organic layer(147) is applied to the surface of the first blanket. A cliche(151) having plural concave patterns(151A) is prepared. The concave patterns are formed in the same form as a pattern which will be formed. An interval between the concave pattern and a neighboring concave pattern is relatively wide. A first organic pattern(147A) is formed in the surface of the first blanket contacted with the concave pattern by rotating the first printing roll in a state when the cliche is contacted with the organic layer. A second organic pattern(147B) is formed on the cliche between the concave patterns. A second organic pattern is transferred onto the surface of the second blanket by rotating the second printing roll in a state when the cliche having the second organic pattern is contacted with the second blanket. A substrate having an etch object layer is provided. The second organic pattern is re-transferred onto the etch object layer by rotating the second printing roll in a state when the substrate is contacted with the transferred second organic pattern. The re-transferred second organic pattern is cured. By etching the etch object layer by using the cured second organic pattern as a mask, an etch object pattern is formed.

Description

Pattern Forming Method by Printing Method {METHOD FOR FORMING PATTERN USING PRINTING PROCESS}

1 is a plan view showing the structure of a general liquid crystal display device.

FIG. 2 is a cross-sectional view illustrating a thin film transistor structure of the liquid crystal display shown in FIG.

3a to 3f are views showing a pattern forming method by the offset printing method according to the prior art.

Figures 4a to 4b is a view for explaining the problem according to the prior art.

5a to 5f are views showing a printing roll manufacturing method according to an embodiment of the present invention.

6a to 6e are views for explaining a pattern forming method by the offset printing method according to another embodiment of the present invention.

The present invention relates to a pattern forming method, and more particularly, to a pattern forming method capable of forming a fine pattern using a printing method.

In display devices, particularly flat panel displays such as liquid crystal display devices, each pixel includes an active device such as a thin film transistor to drive the display device. The driving method is often called an active matrix driving method. In the active matrix method, the active elements are arranged in each pixel arranged in a matrix to drive the pixel.

1 is a view showing an active matrix liquid crystal display device. The liquid crystal display of the structure shown in the figure is a TFT LCD using a thin film transistor as an active element. As shown in the figure, each pixel of the TFT LCD in which N × M pixels are arranged vertically and horizontally has a gate line 4 to which a scan signal is applied from an external driving circuit and a data line 6 to which an image signal is applied. It includes a TFT formed in the intersection area. The TFT includes a gate electrode 3 connected to the gate line 4, a semiconductor layer 8 formed on the gate electrode 3, and activated when a scan signal is applied to the gate electrode 3, and the semiconductor layer. (8) and a source / drain electrode 5 formed thereon. In the display area of the pixel 1, an image signal is applied through the source / drain electrode 5 as the semiconductor layer 8 is connected to the source / drain electrode 5 to activate the liquid crystal (not shown). Is formed on the pixel electrode 10.

2 is a diagram showing the structure of a TFT disposed in each pixel. As shown in the figure, the TFT includes a substrate 20 made of a transparent insulating material such as glass, a gate electrode 3 formed on the substrate 20, and an entire substrate 20 on which the gate electrode 3 is formed. A gate insulating layer 22 stacked over the semiconductor insulating layer 22, a semiconductor layer 6 formed on the gate insulating layer 22 and activated when a signal is applied to the gate electrode 3, and formed on the semiconductor layer 6. A source / drain electrode 5 and a passivation layer 25 formed on the source / drain electrode 5 to protect the device.

The source / drain electrode 5 of the TFT is electrically connected to a pixel electrode formed in the pixel, so that a signal is applied to the pixel electrode through the source / drain electrode 5 to drive the liquid crystal to display an image. do.

In an active matrix display device such as a liquid crystal display device as described above, each pixel has a size of several tens of micrometers, and therefore, an active device such as a TFT disposed in the pixel must be formed with a fine size of several micrometers. Furthermore, as the desire for high-definition display devices such as high-definition television (HDTV) has increased in recent years, more pixels must be disposed on the screen of the same area, and thus, active element patterns (gate line and data line patterns) included in the pixels are included. ) Should also be more finely formed.

On the other hand, in order to fabricate an active device such as a TFT, a pattern, a line, and the like of the active device are formed by a photolithography method using an exposure apparatus. However, the photolithography process is composed of continuous processes such as photo-resist coating, alignment and exposure, development, strips, and the like.

In addition, in order to form a pattern of the liquid crystal display device as described above, a number of photo processes have to be repeated, which leads to a problem that productivity is lowered.

Therefore, in order to solve this problem, a technique of forming a pattern in one process by an offset printing (off-set printing) method has been proposed.

3A to 3C are cross-sectional views illustrating processes for forming a pattern by an offset printing method according to the prior art.

As shown in FIG. 3A, a cylindrical printing roll 41 is provided. The cylindrical printing roll 41 has a blanket 43 is formed on the surface, the organic material feeder 45 is provided at one end. Subsequently, the organic layer 47 is coated on the surface of the blanket 43 through the organic material supplier 45. In this case, the organic material stored in the organic material supplier 45 may use polyimide or benzocyclobutene (BenzoCycloButene).

As shown in FIG. 3B, a cliché 31 having a plurality of convex patterns 31A formed on a surface thereof is prepared. In this case, the convex patterns 31A correspond to fine patterns to be formed on a substrate. Subsequently, as the printing roll 41 is rotated while the printing roll 41 on which the organic film 47 is coated is brought into contact with the surface of the cliché 31, the convex pattern of the cliché 31 is rotated. First organic patterns 47A are formed on a surface of the blanket 43 that is not in contact with the fields 31A, and second organic patterns 47B are formed on the convex patterns 31A. At this time, the convex patterns 31A of the cliché 41 may be formed through a conventional photolithography process. As the printing roll 41 having the organic film 47 coated on the surface of the cliché 31 manufactured as described above proceeds while rotating, the organic film in the area in contact with the convex pattern 31A is convex pattern 31. Left at the top of the. That is, as shown in FIG. 3C, an organic layer remains on the surface of the blanket 47 that is not in contact with the convex pattern 31A, thereby forming the first organic patterns 47A.

As shown in FIG. 3D, a substrate 51 having an etching target layer 53 is provided. Subsequently, as the printing roll 41 is rotated while the printing roll 41 in which the first organic patterns 47A are formed is brought into contact with the surface of the substrate, the first organic patterns of the printing roll 41 are formed. Transferred over the etching target layer. Subsequently, the transferred first organic patterns are cured by irradiating ultraviolet rays or applying heat.

As illustrated in FIG. 3E, the etching target layer is etched using the cured first organic patterns 47A1 as a mask to form etching target patterns 53A.

As shown in FIG. 3F, the cured first organic patterns are removed.

4A to 4B are diagrams for explaining a problem according to the prior art.

As described above, in the related art, when the etching target layer is a passivation layer, the etching target pattern may be a contact hole exposing a drain electrode. In this case, the contact hole should be manufactured in a fine size.

However, as shown in FIG. 4A, the second organic patterns should be formed only on the convex patterns of the printing plate. However, when the convex patterns are very small in size and the spacing of the convex patterns is relatively large, the second organic pattern is formed. They may be formed on the surface of the printing plate between the convex patterns as well as on the convex patterns. As a result, there is a problem that pattern defects are caused.

Therefore, in order to solve the above problems, the present invention is to provide a fine pattern forming method using a printing method that can form a fine pattern.

In order to achieve the above object, the method for forming a micropattern according to the present invention comprises the steps of preparing each of the first and second printing roll having a first, second blanket on the surface; Coating an organic layer on a surface of the first blanket; Preparing a cliché having a plurality of concave patterns formed therein, wherein the concave patterns are formed in the same shape as a pattern to be formed and have a relatively wider distance from neighboring concave patterns; The first organic roll is rotated while the cliché is in contact with the organic layer to form a first organic pattern on a surface of the first blanket that contacts the concave pattern, and at the same time, the top of the clit body between the concave patterns is formed. Forming a second organic pattern on the substrate; Transferring the second organic pattern to the surface of the second blanket by rotating the second printing roll in a state in which the cliché having the second organic pattern is in contact with the second blanket: a substrate having an etch target layer Providing: Re-transferring the second organic pattern on the etching target layer by rotating the second printing roll while the substrate is in contact with the transferred second organic pattern: The second organic layer retransmitted Curing the pattern: and etching the etching target layer using the cured second organic pattern as a mask to form an etching target pattern.

Hereinafter, a pattern forming method according to the present invention will be described in detail with reference to the accompanying drawings.

5A to 5E illustrate a method of forming a fine pattern using a printing method.

As shown in FIG. 5A, a cylindrical first printing roll 141 is provided. The first printing roll 141 has a first blanket 143 is formed on the surface, the first organic feeder 145 is provided at one end. The first organic matter supplier 145 stores a noblock resin. Subsequently, the organic layer 147 is coated on the surface of the first blanket 143 through the first organic feeder 145.

As shown in FIG. 5B, a cliché 151 having concave patterns 151A formed on a surface thereof is prepared. In this case, the concave patterns 151A correspond to the fine patterns to be formed on the substrate through a subsequent printing process. In addition, the concave pattern may be formed with a relatively wide interval from the adjacent concave pattern.

Subsequently, the first print roll 41 is rotated while the first print roll 141 on which the organic layer 147 is coated is brought into contact with the surface of the cliché 151 to thereby rotate the first print roll 41. First organic patterns 147A are formed on a surface of the first blanket 143 that is not in contact with the concave patterns 151A, and a second is formed on the cliché 131 between the concave patterns 151A. Organic patterns 147B are formed. In this case, the concave patterns 151A of the cliché 151 may be formed through a conventional photolithography process. That is, the concave patterns 151A of the cliché 151 are prepared by (1) preparing a transparent glass substrate, (2) depositing a metal film on the entire surface of the substrate, and (3) patterning the metal film to form a concave metal pattern. The substrate may be formed by patterning the substrate using the metal pattern as a mask.

As shown in FIGS. 5C and 5D, a cylindrical second printing roll 161 is provided. At this time, the second printing roll 161 has a second blanket 163 is formed on the surface. Subsequently, the second organic roll 161 is rotated on the surface of the second blanket 163 by rotating the second printing roll 161 in contact with the cliché having the second organic pattern and the second blanket. Warriors

As shown in FIG. 5E, a substrate 171 having an etching target layer 171 is provided. In this case, the substrate 171 may be a thin film transistor array substrate including a gate electrode, a source electrode, and a drain electrode. In addition, the etching target layer 171 may be a protective film.

 Subsequently, the second printing roll is rotated while the second organic pattern transferred to the second blanket is in contact with the substrate to retransmit the second organic patterns 147B on the etching target layer.

As shown in FIG. 5F, the retransmitted second organic patterns are cured. In this case, the step of curing the retransmitted second organic pattern may include applying a thermal thermal or ultraviolet irradiation. Subsequently, the etching target layer is etched using the cured second organic pattern as a mask to form an etching target pattern 173A. In this case, a gap between the etching target patterns 173A may correspond to a contact hole having a fine size exposing the drain electrode.

6A to 6E are diagrams for describing a pattern forming method by an offset printing method according to another exemplary embodiment of the present invention.

As shown in FIG. 6A, a cliché 181 having a plurality of convex patterns 181A is prepared. In this case, the convex patterns 181A are formed to have a relatively large distance from the neighboring convex patterns 181A. Next, an organic film is coated on the cliché 181. In this case, the organic layer may be a noblock resin layer.

Subsequently, the doctor blade 191 is moved in one direction while the doctor blade 191 is in contact with the surface of the cell body to form an organic pattern on the cell body 181 between the convex patterns and at the same time. Remove the organic film remaining on the sieve surface.

As shown in Fig. 6B and Fig. 6C, a printing roll 201 having a blanket 203 on its surface is prepared. Subsequently, the organic pattern 183 is rotated on the printing roll 201 while the blanket 203 is in contact with the organic pattern on the surface of the blanket 203 which contacts the organic patterns 183. Warriors (183A).

As shown in FIG. 6D, a substrate 211 provided with an etching target layer 213 is provided. Subsequently, the printing roll is rotated while the substrate 211 and the transferred first organic patterns are in contact with each other to retransmit the first organic patterns on the etching target layer 213. Then, the first organic patterns are cured. Reference numeral 183A1, which is not described in FIG. 6D, illustrates the cured first organic patterns.

As illustrated in FIG. 6E, the etching target layer is etched using the first organic patterns 183A as a mask to form etching target patterns 213A. In this case, the etching target patterns 213A may be contact holes with a fine interval formed in the passivation layer.

On the other hand, the pattern formation method by the printing method may be used for element formation on a semiconductor wafer as well as an active element or a circuit of a display element such as a liquid crystal display element.

As described above, according to the present invention, by forming the convex pattern on the surface of the printing roll corresponding to the position where the ink pattern is to be formed when forming the display element or the like, the printing equipment can be further simplified. In addition, the present invention by using a printing roll formed with a convex pattern on the convex pattern

The present invention can simplify the printing process by forming the printing ink pattern and transferring it to the etching target layer. By simplifying the ratio and printing process, the production efficiency can be increased.

Claims (13)

Preparing first and second printing rolls each having first and second blankets on a surface thereof; Coating an organic layer on a surface of the first blanket; Preparing a cliché having a plurality of concave patterns formed therein, wherein the concave patterns are formed in the same shape as a pattern to be formed and have a relatively wider distance from neighboring concave patterns; The first organic roll is rotated while the cliché is in contact with the organic layer to form a first organic pattern on a surface of the first blanket that contacts the concave pattern, and at the same time, the top of the clit body between the concave patterns is formed. Forming a second organic pattern on the substrate; Transferring the second organic pattern to the surface of the second blanket by rotating the second printing roll while the cliché having the second organic pattern is in contact with the second blanket; Providing a substrate having an etching target layer: Retransferring the second organic pattern on the etching target layer by rotating the second printing roll while the substrate is in contact with the transferred second organic pattern: Curing the retransmitted second organic pattern: and And etching the etch target layer using the cured second organic pattern as a mask to form an etch target pattern. The method of claim 1, wherein the preparing of the cliché provided with the concave pattern comprises: Preparing a transparent glass substrate; Depositing a metal film on the entire surface of the substrate; Patterning the metal film to form a concave metal pattern; The fine pattern forming method using an offset printing method comprising the step of patterning the substrate using the metal pattern as a mask. The method of forming a fine pattern using an offset printing method according to claim 1, wherein the organic layer is a noblock resin. The method of claim 1, wherein curing the organic pattern comprises: Fine pattern forming method using an offset printing method characterized in that the thermal (heat) is applied to the organic pattern. The method of claim 4, wherein curing the organic pattern comprises: Ultrafine pattern formation method using an offset printing method characterized in that for irradiating the organic pattern with ultraviolet rays. The method of claim 1, wherein the etching target layer is formed of a protective film. Preparing a cliché having a plurality of convex patterns formed thereon, wherein the convex patterns are formed to have a relatively wide distance from neighboring convex patterns; Forming an organic pattern on the cliché between the convex patterns; Preparing a printing roll having a blanket on the surface thereof; Transferring the organic pattern to a blanket surface in contact with the organic pattern by rotating the printing roll while the organic pattern is in contact with the blanket: Providing a substrate having an etching target layer: Retransferring the first organic pattern on the etching target layer by rotating the printing roll while the substrate is in contact with the transferred first organic pattern: Curing the retransmitted first organic pattern: And forming an etching target pattern by patterning the etching target layer by using the cured first organic pattern as a mask. The method of claim 7, wherein preparing the cliché provided with the convex pattern is Preparing a transparent glass substrate; Depositing a metal film on the entire surface of the substrate; Patterning the metal film to form a convex metal pattern; The fine pattern forming method using an offset printing method comprising the step of patterning the substrate using the metal pattern as a mask. The method of forming a fine pattern using an offset printing method according to claim 7, wherein the organic film is a noblock resin film. The method of claim 7, wherein curing the organic pattern, Fine pattern forming method using an offset printing method characterized in that the thermal (heat) is applied to the organic pattern. The method of claim 10, wherein curing the organic pattern comprises: Ultrafine pattern formation method using an offset printing method characterized in that for irradiating the organic pattern with ultraviolet rays. The method of claim 7, wherein the etching target layer is formed of a protective film. The method of claim 7, wherein Forming an organic pattern on the cliché between the convex patterns Filling the organic material in the groove, Applying an organic layer on the cliché; And Moving the doctor blade in one direction while the doctor blade is in contact with the surface of the body and forming an organic pattern on the body between the convex patterns and simultaneously removing the organic film remaining on the surface of the body. Micro pattern formation method comprising.
KR1020060139152A 2006-12-29 2006-12-29 Method for forming pattern using printing process KR20080062953A (en)

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