KR20080047923A - 광 감지 센서 및 그의 제조 방법 - Google Patents
광 감지 센서 및 그의 제조 방법 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 68
- 239000003990 capacitor Substances 0.000 claims abstract description 57
- 239000011229 interlayer Substances 0.000 claims abstract description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 56
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 238000003860 storage Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 139
- 239000010408 film Substances 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
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- 230000003287 optical effect Effects 0.000 abstract description 2
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Abstract
Description
Claims (12)
- 광을 감지할 수 있는 비정질 실리콘 박막 트랜지스터와;상기 비정질 실리콘 박막 트랜지스터에서 발생된 전하를 저장할 수 있는 스토리지 캐패시터와;상기 스토리지 캐패시터에 저장된 전하를 이동시키도록, 스위칭하는 다결정 실리콘 박막 트랜지스터로 구성된 광 감지 센서.
- 제 1 항에 있어서,상기 다결정 실리콘 박막 트랜지스터는,양측에 오믹 컨택용 도핑 영역이 형성되어 있는 다결정 실리콘 섬(Island)과;상기 다결정 실리콘 섬(Island)을 감싸는 상기 제 1 층간 절연막과;상기 다결정 실리콘 섬 상부 방향의 제 1 층간 절연막 상부에 형성된 스위치용 게이트 전극과;상기 스위치용 게이트 전극을 감싸며, 상기 제 1 층간 절연막 상부에 형성된 제 2 층간 절연막으로 구성되며,상기 제 1과 2 층간 절연막이 식각되어, 오믹 컨택용 도핑 영역이 노출되는 한 쌍의 트렌치(Trench)가 형성되어 있고,상기 한 쌍의 트렌치 각각에 채워진 소스 및 드레인 전극이 형성되어 있는 것을 특징으로 하는 광 감지 센서.
- 제 1 항에 있어서,상기 비정질 실리콘 박막 트랜지스터는,센서용 게이트 전극과;상기 센서용 게이트 전극을 감싸는 게이트 절연막과;상기 게이트 절연막 상부에 형성된 비정질 실리콘층과;상기 비정질 실리콘층 양측 상부에 형성되며, 불순물이 도핑되어 있는 한 쌍의 오믹 컨택용 비정질 실리콘층과;하나의 오믹 컨택용 실리콘층에 연결된 소스 전극과;다른 오믹 컨택용 실리콘층에 연결된 드레인 전극으로 구성된 것을 특징으로 하는 광 감지 센서.
- 광투과형 기판 상부에 버퍼층이 형성되어 있고;상기 버퍼층 상부에, 양측에 오믹 컨택용 도핑 영역이 형성되어 있는 다결정 실리콘 섬(Island)이 형성되어 있고;상기 다결정 실리콘 섬을 감싸며, 상기 버퍼층 상부에 제 1 층간 절연막이 형성되어 있고;상기 다결정 실리콘 섬 상부 방향의 제 1 층간 절연막 상부에 스위치용 게이트 전극이 형성되어 있고;상기 스위치용 게이트 전극을 감싸며, 상기 제 1 층간 절연막 상부에 제 2 층간 절연막이 형성되어 있고;상기 제 1과 2 층간 절연막이 식각되어, 오믹 컨택용 도핑 영역이 노출되는 한 쌍의 트렌치(Trench)가 형성되어 있고;상기 한 쌍의 트렌치 각각에 채워진 소스 및 드레인 전극이 형성되어 있고;상기 제 2 층간 절연막 상부에 센서용 게이트 전극과 상기 센서용 게이트 전극과 연결되는 제 1 캐패시터 전극이 형성되어 있고;상기 소스 및 드레인 전극, 센서용 게이트 전극과 제 1 캐패시터 전극을 감싸며, 상기 제 2 층간 절연막 상부에 게이트 절연막이 형성되어 있고;상기 게이트 절연막에 상기 드레인 전극을 노출시키는 트렌치가 형성되어 있고;상기 트렌치에 노출된 드레인 전극과 연결되는 제 2 캐패시터 전극이 게이트 절연막 상부에 형성되어 있고;상기 제 2 캐패시터 전극을 감싸며, 상기 게이트 절연막 상부에 비정질 실리 콘층이 형성되어 있고;상기 비정질 실리콘층 양측 상부에 불순물이 도핑된 한 쌍의 오믹 컨택용 비정질 실리콘층이 형성되어 있고;상기 제 2 캐패시터 전극과 하나의 오믹 컨택용 실리콘층에 연결된 소스 전극 및 다른 오믹 컨택용 실리콘층에 연결된 드레인 전극이 형성되어 있는 광 감지 센서.
- 제 4 항에 있어서,상기 제 1 캐패시터 전극은,ITO(Indium-tin oxide), IZO(Indium-zinc oxide), SnO(Tin oxide)와 금속 박막 중 어느 하나인 것을 특징으로 하는 광 감지 센서.
- 제 4 항에 있어서,상기 다결정 실리콘 섬(Island)의 두께는 30 ~ 300㎚인 것을 특징으로 하는 광 감지 센서.
- 제 4 항에 있어서,상기 비정질 실리콘층과 오믹 컨택용 실리콘층으로 이루어진 섬의 두께는 100 ~ 700㎚인 것을 특징으로 하는 광 감지 센서.
- 광투과형 기판 상부에 버퍼층을 형성하고, 상기 버퍼층 상부에 비정질 실리콘 섬(Island)을 형성하고, 상기 비정질 실리콘 섬을 다결정 실리콘 섬으로 변화시키는 단계와;상기 다결정 실리콘 섬을 감싸며, 상기 버퍼층 상부에 제 1 층간 절연막을 형성하고, 상기 다결정 실리콘 섬 상부 방향의 제 1 층간 절연막 상부에 스위치용 게이트 전극을 형성하는 단계와;불순물을 도핑하여, 상기 다결정 실리콘 섬(Island) 양측에 오믹 컨택용 도핑 영역을 형성하는 단계와;상기 스위치용 게이트 전극을 감싸며, 상기 제 1 층간 절연막 상부에 제 2 층간 절연막을 형성하는 단계와;상기 제 1과 2 층간 절연막을 선택적으로 식각하여, 상기 오믹 컨택용 도핑 영역이 노출되는 한 쌍의 트렌치(Trench)를 형성하고, 상기 한 쌍의 트렌치 각각에 채워진 소스 및 드레인 전극과 상기 제 2 층간 절연막 상부에 센서용 게이트 전극을 형성하는 단계와;상기 제 2 층간 절연막 상부에, 상기 센서용 게이트 전극과 연결되는 제 1 캐패시터 전극을 형성하는 단계와;상기 소스 및 드레인 전극, 센서용 게이트 전극과 제 1 캐패시터 전극을 감 싸며, 상기 제 2 층간 절연막 상부에 게이트 절연막을 형성하고, 상기 게이트 절연막을 식각하여 상기 드레인 전극을 노출시키는 트렌치를 형성하는 단계와;상기 트렌치에 노출된 드레인 전극과 연결되는 제 2 캐패시터 전극을 게이트 절연막 상부에 형성하고, 상기 제 2 캐패시터 전극을 감싸며, 상기 게이트 절연막 상부에 비정질 실리콘층과 불순물이 도핑된 오믹 컨택용 비정질 실리콘층을 순차적으로 형성하는 단계와;상기 비정질 실리콘층과 오믹 컨택용 실리콘층을 선택적으로 식각하여 상기 게이트 전극 상부에, 상기 비정질 실리콘층과 오믹 컨택용 실리콘층으로 이루어진 섬을 형성하는 단계와;상기 비정질 실리콘층과 오믹 컨택용 실리콘층으로 이루어진 섬 및 상기 제 2 캐패시터 전극을 감싸며, 상기 게이트 절연막 상부에 금속층을 형성하는 단계와;상기 금속층 및 오믹 컨택용 실리콘층을 선택적으로 식각하여, 상기 제 2 캐패시터 전극과 하나의 오믹 컨택용 실리콘층에 연결된 소스 전극 및 다른 오믹 컨택용 실리콘층에 연결된 드레인 전극을 형성하는 단계를 포함하여 구성된 광 감지 센서의 제조 방법.
- 제 8 항에 있어서,상기 비정질 실리콘 섬을 다결정 실리콘 섬으로 변화시키는 것은,레이저 조사 공정, 금속 유도 결정화 공정과 열처리 공정 중 하나를 이용하 는 것을 특징으로 하는 광 감지 센서.
- 제 8 항에 있어서,상기 다결정 실리콘 섬(Island) 양측에 오믹 컨택용 도핑 영역을 형성하는 단계는,상기 다결정 실리콘 섬(Island) 양측에 불순물을 도핑하고,상기 오믹 컨택용 도핑 영역 및 다결정 실리콘 섬(Island)을 레이저 조사 또는 열처리 방법으로 활성화시키는 단계인 것을 특징으로 하는 광 감지 센서.
- 제 8 항에 있어서,상기 제 1과 2 캐패시터 전극의 두께는 10 ~ 500㎚인 것을 특징으로 하는 광 감지 센서.
- 제 8 항에 있어서,상기 제 1 캐패시터 전극은,ITO(Indium-tin oxide), IZO(Indium-zinc oxide), SnO(Tin oxide)와 금속 박막 중 하나인 것을 특징으로 하는 광 감지 센서.
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US10134800B2 (en) | 2016-11-09 | 2018-11-20 | Lg Display Co., Ltd. | Photo sensor and display device having the same |
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GB2558398B (en) * | 2016-02-05 | 2019-11-27 | Lg Display Co Ltd | Photo sensor and display device having the same |
US10134800B2 (en) | 2016-11-09 | 2018-11-20 | Lg Display Co., Ltd. | Photo sensor and display device having the same |
US10580822B2 (en) | 2016-11-09 | 2020-03-03 | Lg Display Co., Ltd. | Method of making and device having a common electrode for transistor gates and capacitor plates |
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