KR20070013364A - Heater module of chemical vapor deposition apparatus - Google Patents

Heater module of chemical vapor deposition apparatus Download PDF

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KR20070013364A
KR20070013364A KR1020050067587A KR20050067587A KR20070013364A KR 20070013364 A KR20070013364 A KR 20070013364A KR 1020050067587 A KR1020050067587 A KR 1020050067587A KR 20050067587 A KR20050067587 A KR 20050067587A KR 20070013364 A KR20070013364 A KR 20070013364A
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susceptor
heater module
vapor deposition
chemical vapor
heat
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KR1020050067587A
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Korean (ko)
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KR100730379B1 (en
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최종식
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(주)월드이비텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

A heater module of a CVD apparatus is provided to transfer heat to the upper surface of a susceptor rapidly and uniformly by including a heat transfer medium over a heat wire built in the susceptor. A semiconductor wafer(60) is placed on a susceptor(51) having a heat wire so as to be heated. A heat transfer medium(100) is installed over a heat wire(52) built in the susceptor. An adiabatic member is formed on the outer circumference of the susceptor, surrounding the lower part and the lateral surface of the susceptor. A space part of a vacuum state is formed in the adiabatic member, made of one of SUS(steel use stainless), insulator, ceramic or titanium.

Description

화학 기상 증착장치의 히터모듈{Heater module of chemical vapor deposition apparatus} Heater module of chemical vapor deposition apparatus

도 1은 종래의 화학 기상 증착장치를 나타내는 개략도.1 is a schematic view showing a conventional chemical vapor deposition apparatus.

도 2a 및 도 2b는 종래의 화학 기상 증착장치의 히터모듈을 도시한 단면도.Figure 2a and 2b is a cross-sectional view showing a heater module of a conventional chemical vapor deposition apparatus.

도 3은 본 발명의 화학 기상 증착장치 히터모듈의 일실시예를 도시한 단면도.Figure 3 is a cross-sectional view showing an embodiment of the chemical vapor deposition apparatus heater module of the present invention.

도 4는 본 발명의 화학 기상 증착장치 히터모듈의 다른 실시예를 도시한 단면도.Figure 4 is a cross-sectional view showing another embodiment of the chemical vapor deposition apparatus heater module of the present invention.

* 도면의 주요 부분에 대한 부호의 설명*        * Explanation of symbols for the main parts of the drawings *

10: 챔버 20: 진공펌프  10: chamber 20: vacuum pump

30: 개스공급부 40: 배기구  30: gas supply part 40: exhaust port

50: 히터모듈 51: 서셉터  50: heater module 51: susceptor

52: 열선 53: 전원선  52: heating line 53: power line

54: 지지부 60: 웨이퍼  54: support 60: wafer

100: 열전달매체 200: 단열부재  100: heat transfer medium 200: heat insulating member

본 발명은 화학 기상 증착법(Chemical Vapor Deposition)공정에서 CVD 반응 챔버 내부에 필수적으로 구비하여야 하는 히터모듈에 관한 것으로, 좀 더 상세하게는 반도체 웨이퍼가 안착되는 서셉터의 가열시간을 단축 시킴과 동시에 웨이퍼 표면 온도의 균일성을 유지할 수 있도록 하는 화학 기상 증착장치의 히터모듈에 관한 것이다. The present invention relates to a heater module which must be provided essentially inside the CVD reaction chamber in a chemical vapor deposition process, and more particularly, reduces the heating time of the susceptor on which the semiconductor wafer is seated, and at the same time, The present invention relates to a heater module of a chemical vapor deposition apparatus capable of maintaining uniformity of surface temperature.

일반적으로 반도체 집적회로 공정에서 필수적으로 요구되는 박막형성 공정 가운데 화학 기상 증착법(Chemical Vapor Deposition, 이하 CVD)이 있다. 이 증착방법은 한 종류 이상의 화합물 개스를 CVD공정을 위해 마련된 반응 챔버내로 투입하여 고온으로 가열된 반도체 웨이퍼와 기상으로 화학반응을 일으키면서 반도체 웨이퍼상에 박막을 형성시키는 공정이다. In general, a chemical vapor deposition method (CVD) is one of the thin film formation processes required in the semiconductor integrated circuit process. This deposition method is a process in which one or more kinds of compound gases are introduced into a reaction chamber prepared for a CVD process to form a thin film on a semiconductor wafer while causing a chemical reaction in a vapor phase with a semiconductor wafer heated to a high temperature.

이와같은 CVD공정을 하기 위한 통상적인 CVD장치의 개략적인 설명은 반응챔버와, 반응챔버 내를 진공상태로 하기 위해 필요한 진공펌프와, 챔버내로 반응성 개스를 투입하기 위한 개스공급구와, 배기구와, 히터모듈로 구성되어 있다. A general description of a conventional CVD apparatus for such a CVD process includes a reaction chamber, a vacuum pump necessary to vacuum the reaction chamber, a gas supply port for introducing a reactive gas into the chamber, an exhaust port, and a heater. It is composed of modules.

이중 상기 히터모듈은 반도체 웨이퍼가 고온에서 투입된 반응성 개스와 화학반응이 잘 일어나도록 하기 위해 반도체 웨이퍼를 가열하기 위한 것으로, 반도체 웨이퍼가 직접 안착되어 가열되도록 열선을 내장한 서셉터와, 열선에 전력을 공급 하기 위한 전원선 및 전원선을 챔버내로 도입하기 위한 지지부로 구성된다.The heater module is for heating the semiconductor wafer so that the semiconductor wafer is chemically reacted with the reactive gas injected at a high temperature. The heater module includes a susceptor with a heating wire to directly seat and heat the semiconductor wafer. It is composed of a power supply line for supplying and a support for introducing the power supply line into the chamber.

이와 같은 구성에 의해 진공펌프를 사용하여 챔버내를 진공상태로 만들고 히터 모듈을 통해 반도체 웨이퍼를 고온으로 가열한 후 개스공급부를 통해 반응성 개스를 투입시키게 되면 반응성 개스는 챔버 내부가 고진공 상태이므로 쉽고도 빠르게 챔버내로 골고루 비산되고, 비산된 개스는 고온으로 가열된 실리콘 웨이퍼 표면과 화학 반응을 일으켜 웨이퍼 위에 박막이 형성된다.In this configuration, if the chamber is vacuumed using a vacuum pump and the semiconductor wafer is heated to a high temperature through the heater module, and the reactive gas is introduced through the gas supply unit, the reactive gas is easily vacuumed because the chamber is in a high vacuum state. Rapidly and evenly scattered into the chamber, the scattered gas chemically reacts with the silicon wafer surface heated to a high temperature, forming a thin film on the wafer.

이때 웨이퍼상에 증착되는 박막의 증착율은 웨이퍼의 온도에 의해 크게 영향을 받는다. 예를 들어 같은 조건으로 막을 증착하더라도 웨이퍼의 온도가 높은 곳에 증착되는 막의 두께는 온도가 낮은 곳에서 증착되는 막의 두께보다 두껍다. 따라서 웨이퍼가 안착되는 서셉터 상면의 온도 균일도가 CVD 박막의 두께 균일도를 좌우하는 가장 큰 요인이 된다. The deposition rate of the thin film deposited on the wafer is greatly affected by the temperature of the wafer. For example, even if the film is deposited under the same conditions, the thickness of the film deposited at a high temperature of the wafer is thicker than that of the film deposited at a low temperature. Therefore, the temperature uniformity of the upper surface of the susceptor on which the wafer is seated is the biggest factor that determines the thickness uniformity of the CVD thin film.

이와 같은 종래의 히터모듈은 도 2a 및 도 2b에 도시된 바와 같다. Such a conventional heater module is as shown in Figures 2a and 2b.

먼저, 도 2a에 도시한 바에 의하면 서셉터내에 내장한 열선과 서셉터 상면과의 거리 L1이 작으면 서셉터의 상면을 가열하는 시간은 짧아지나 서셉터 상면에 도달하는 열은 t1지점과 t2지점에서 온도차가 발생하여 웨이퍼 표면 온도가 균일하지 못해 박막의 불량이 발생하는 문제점을 가지고 있다.First, as shown in FIG. 2A, when the distance L1 between the heating wires embedded in the susceptor and the upper surface of the susceptor is small, the time for heating the upper surface of the susceptor is shortened, but the heat reaching the upper surface of the susceptor is at points t1 and t2. Due to the temperature difference in the wafer surface temperature is not uniform, there is a problem that the defect of the thin film occurs.

한편, 도 2b에 도시한 바에 의하면 서셉터 상면과 열선과의 간격 L2를 크게하여 열선으로부터 등고선을 이루며 퍼져나간 열이 서셉터의 상면에 이르러 t1지점과 t2지점의 온도차가 거의 발생하지 않는다. 그런데 이와같은 구조에 의하면 서셉터의 상면과 열선과의 간격이 크므로 열이 서셉터 하부에서부터 상면에까지 고 르게 분포되기 까지 가열시간이 많이 소요되며 이로 인한 전력소모가 많아지는 문제점이 있었다.On the other hand, as shown in Fig. 2b, the gap between the susceptor upper surface and the heating wire is increased so that the heat spreading in a contour line from the heating wire reaches the upper surface of the susceptor so that the temperature difference between the t1 and t2 points hardly occurs. However, according to such a structure, since the distance between the upper surface of the susceptor and the heating wire is large, it takes a lot of heating time until the heat is evenly distributed from the lower part of the susceptor to the upper surface.

또한, 종래의 일반적인 히터모듈들은 서셉터를 800-900℃의 고온을 유지함으로 인해 그 측면이나 하부를 통해 방출되는 고열이 외측커버인 챔버에 전달되어 뒤틀림 등의 변형이 이루어지기 쉬운 문제점이 있었다.In addition, the conventional heater module has a problem that the high heat emitted through the side or the lower is transferred to the chamber which is the outer cover to maintain the high temperature of the susceptor 800-900 ℃ easy deformation such as distortion.

따라서, 본 발명은 상기한 문제점을 해결하기 위하여 안출된 것으로, Accordingly, the present invention has been made to solve the above problems,

본 발명의 목적은 서셉터에 내장된 열선의 상측에 열전달매체를 구비하여 열이 서셉터의 상면에 빠르고 균일하게 도달되도록 하여 서셉터를 가열하는 시간을 단축함과 아울러 서셉터의 상면 즉 웨이퍼의 안착면의 온도를 전체적으로 균일하게 유지 시킬 수 있는 화학 기상 증착장치의 히터모듈을 제공하는 데 있다.An object of the present invention is to provide a heat transfer medium on the upper side of the heating wire embedded in the susceptor so that the heat is quickly and uniformly reached on the upper surface of the susceptor, thereby shortening the time for heating the susceptor and the upper surface of the susceptor. It is to provide a heater module of a chemical vapor deposition apparatus capable of maintaining a uniform temperature of the seating surface as a whole.

본 발명의 다른 목적은 서셉터의 하부면 및 측면을 감싸는 진공상태의 단열부재를 구비하여 챔버의 뒤틀림 등의 변형을 방지할 수 있는 화학 기상 증착장치의 히터모듈을 제공하는 데 있다.Another object of the present invention is to provide a heater module of a chemical vapor deposition apparatus having a vacuum insulating member surrounding the lower surface and the side of the susceptor to prevent deformation such as warping of the chamber.

상기 목적을 달성하기 위한 본 발명은 반도체 웨이퍼가 안착되어 가열되도록 열선을 내장한 서셉터(51)에 있어서,In the present invention for achieving the above object in the susceptor 51 incorporating a heating wire so that the semiconductor wafer is seated and heated,

상기 서셉터(51)에 내장된 열선(52)의 상측에 열전달매체(100)를 구비하여서 된 것을 특징으로 한다.The heat transfer medium 100 is provided on the upper side of the heating wire 52 embedded in the susceptor 51.

상기 서셉터(51)의 외주연에는 하부 및 측면을 감싸는 단열부재(200)를 형성하여서 된 것을 특징으로 한다.The outer periphery of the susceptor 51 is characterized in that by forming a heat insulating member 200 surrounding the lower and side.

(실시예)(Example)

이하, 본 발명을 첨부한 실시예 도면을 참조하여 자세히 설명하면 다음과 같다. Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명의 화학 기상 증착장치 히터모듈의 일실시예를 도시한 단면도이고, 도 4는 본 발명의 화학 기상 증착장치 히터모듈의 다른 실시예를 도시한 단면도이다.3 is a cross-sectional view showing an embodiment of the chemical vapor deposition apparatus heater module of the present invention, Figure 4 is a cross-sectional view showing another embodiment of the chemical vapor deposition apparatus heater module of the present invention.

본 발명에 따른 히터모듈이 적용된 화학 기상 증착장치는 반응챔버(10)와, 반응챔버내를 진공상태로 하기 위해 필요한 진공펌프(20)와, 챔버내로 반응성 개스를 투입하기 위한 개스공급구(30)와, 배기구(40)와, 히터모듈(50)로 구성된다.The chemical vapor deposition apparatus to which the heater module according to the present invention is applied includes a reaction chamber 10, a vacuum pump 20 necessary to vacuum the reaction chamber, and a gas supply port 30 for introducing a reactive gas into the chamber. ), An exhaust port 40, and a heater module 50.

여기서 상기 히터모듈(50)은 도 3, 도 4에 도시한 바와 같이 반도체 웨이퍼(60)가 안착되어 가열되도록 열선(52)을 내장하고, 상기 열선(52)의 상측에는 열전달매체(100)를 내장한 서셉터(51)와, 상기 열선(52)에 전력을 공급하기 위한 전원선(53) 및 전원선(53)을 챔버(10)내로 도입하기 위한 지지부(54)와, 상기 지지부(54)에 상부에 결합되어 서셉터(51)의 하부면 및 측면을 감싸는 진공상태의 단열부재(200)로 구성된다.3 and 4, the heater module 50 includes a heating wire 52 so that the semiconductor wafer 60 is seated and heated, and a heat transfer medium 100 is disposed above the heating wire 52. A built-in susceptor 51, a support portion 54 for introducing power lines 53 and power lines 53 for supplying power to the heating wire 52 into the chamber 10, and the support portion 54 It is composed of a heat insulating member 200 in a vacuum state coupled to the upper side to surround the lower surface and the side of the susceptor (51).

상기 열전달매체(100)는 서셉터(51)의 상면과 열선(52)과의 중간부에 구비되 어 열선(52)에서 발산되는 열을 빠르게 흡수하여 서셉터(51)의 상면에 균일한 온도로 도달하도록 한 것으로, 불응축가스가 봉입되는 가변전열히트 파이프, 열전도율이 뛰어난 알루미늄 또는 구리재질 중에 어느 하나로 형성함이 바람직하다.The heat transfer medium 100 is provided in the middle of the upper surface of the susceptor 51 and the heating wire 52 to quickly absorb the heat emitted from the heating wire 52 to uniform temperature on the upper surface of the susceptor 51. It is preferable to form one of a variable heat transfer pipe in which a non-condensable gas is enclosed, and an aluminum or copper material which is excellent in thermal conductivity.

상기 서셉터(51)는 열전달매체(100)가 사이에 개재되도록 상판(51a)과 하판(51b)으로 구분하되, 하판(51b)에는 열선(52)을 내장하고, 열선(52)과 서셉터(51)의 상면과의 중간에 열전달매체(100)가 구비되도록 상/하판을 구분한다.The susceptor 51 is divided into an upper plate 51a and a lower plate 51b such that the heat transfer medium 100 is interposed therebetween, and the lower wire 51b includes a heating wire 52, and the heating wire 52 and the susceptor. The upper and lower plates are divided so that the heat transfer medium 100 is provided in the middle of the upper surface of the 51.

상기 단열부재(200)는 지지부(54)에 결합되도록 중앙을 관통하고 내부에 진공상태의 공간부를 형성하여 서셉터(51)의 하부면과 측면을 감싸도록 단면이 U자형상을 이루도록 형성하며, 이는 서셉터(51)의 고온으로 인해 챔버(10)의 뒤틀림을 방지하기 위한 것으로, SUS플레이트, 인슐레이션, 세라믹, 티타늄 등의 고온의 단열재 재질이면 무방하다.The heat insulating member 200 passes through the center to be coupled to the support portion 54 and forms a space in a vacuum state therein to form a U-shaped cross section so as to surround the lower surface and the side surface of the susceptor 51. This is to prevent warping of the chamber 10 due to the high temperature of the susceptor 51, and may be a high temperature insulating material such as SUS plate, insulation, ceramic, titanium, and the like.

이같은 구성에 의해 박막형성과정을 살펴보면 다음과 같다. Looking at the thin film formation process by such a configuration is as follows.

먼저 진공펌프(20)를 사용하여 챔버(10)내를 진공상태로 만들고 히터모듈(50)의 서셉터(51)내 열선(52)에 전력을 공급하면 상기 열선(52)에서 발산된 열이 열전달매체(100)의 하부를 통해 빠르게 흡수되어 상부에서 고르게 발산하므로 서셉터(51)의 상면 즉 웨이퍼(60)가 안착되는 접촉면에 빠르고 고르게 열이 도달하여 웨이퍼(60) 표면 온도의 균일성을 유지한 채 고온으로 가열되며, 개스공급부(30)를 통해 투입된 반응성 개스는 챔버(10) 내부가 고진공 상태이므로 쉽고도 빠르게 챔버(10)내로 골고루 비산되고, 비산된 개스는 고온으로 가열된 실리콘 웨이퍼(60) 표면과 화학 반응을 일으켜 웨이퍼(60) 위에 박막이 형성된다. First, the chamber 10 is vacuumed using the vacuum pump 20, and power is supplied to the heating wire 52 in the susceptor 51 of the heater module 50. Since it is rapidly absorbed through the lower portion of the heat transfer medium 100 and evenly radiates from the upper portion, heat reaches the upper surface of the susceptor 51, that is, the contact surface on which the wafer 60 is seated, so that the uniformity of the surface temperature of the wafer 60 can be achieved. The heated gas is maintained at a high temperature, and the reactive gas introduced through the gas supply part 30 is easily and quickly scattered into the chamber 10 since the inside of the chamber 10 is in a high vacuum state, and the scattered gas is heated at a high temperature. A chemical reaction is performed with the surface (60) to form a thin film on the wafer (60).

또한, 지지부(54)의 상부에 결합되어 서셉터(51)의 하부면 및 측면을 감싸는 진공상태의 단열부재(200)를 통해 평균 800℃ 이상의 고온을 유지하는 서셉터(51)의 열손실을 줄이며, 서셉터(51)의 고온으로 챔버(10)가 뒤틀림 등의 변형이 이루어지는 것을 방지하는 것이다.In addition, the heat loss of the susceptor 51 coupled to the upper portion of the support 54 to maintain a high temperature of 800 ° C or more on average through the heat insulating member 200 in a vacuum state surrounding the lower surface and the side of the susceptor 51 This reduces the deformation of the chamber 10 due to the high temperature of the susceptor 51.

이상과 같이 본 발명의 실시예에 대해 상세히 설명하였으나, 본 발명의 권리범위는 이에 한정되지 않으며, 본 발명의 실시예와 실질적으로 균등의 범위에 있는 것 까지 본 발명의 권리범위가 미친다.Although the embodiments of the present invention have been described in detail as described above, the scope of the present invention is not limited thereto, and the scope of the present invention extends to the range substantially equivalent to the embodiments of the present invention.

이상에서 설명한 바와같이 본 발명은 서셉터에 내장된 열선의 상측에 열전달매체를 구비하여 열이 서셉터의 상면에 빠르고 균일하게 도달되도록 하므로서 서셉터를 가열하는 시간을 단축함과 아울러 서셉터의 상면 즉 웨이퍼의 안착면의 온도를 전체적으로 균일하게 유지하여 박막의 두께를 일정하게 형성할 수 있도록 하므로 반도체 소자의 생산성 및 수율을 향상시킬 수 있는 효과가 있다.As described above, the present invention includes a heat transfer medium on the upper side of the heating wire embedded in the susceptor so that heat is quickly and uniformly reached on the upper surface of the susceptor, thereby shortening the time for heating the susceptor and the upper surface of the susceptor. That is, since the temperature of the seating surface of the wafer is maintained to be uniform throughout, the thickness of the thin film can be uniformly formed, thereby improving productivity and yield of the semiconductor device.

또한, 서셉터의 하부면 및 측면을 감싸는 진공상태의 단열부재를 구비하여 서셉터의 균일한 온도를 유지함과 아울러 열손실을 줄이며, 챔버의 뒤틀림등의 변형을 방지할 수 있는 효과가 있다.In addition, a vacuum insulating member surrounding the lower surface and the side of the susceptor is provided to maintain a uniform temperature of the susceptor, reduce heat loss, and prevent deformation such as warping of the chamber.

Claims (3)

반도체 웨이퍼가 안착되어 가열되도록 열선을 내장한 서셉터(51)에 있어서,In the susceptor 51 incorporating a heating wire so that the semiconductor wafer is seated and heated, 상기 서셉터(51)에 내장된 열선(52)의 상측에 열전달매체(100)를 구비하여서 된 것을 특징으로 하는 화학 기상 증착장치의 히터모듈.Heater module of the chemical vapor deposition apparatus, characterized in that provided with a heat transfer medium (100) on the upper side of the heating wire (52) embedded in the susceptor (51). 제 1항에 있어서,The method of claim 1, 상기 서셉터(51)의 외주연에는 하부 및 측면을 감싸는 단열부재(200)를 형성하여서 된 것을 특징으로 하는 화학 기상 증착장치의 히터모듈.The outer periphery of the susceptor (51) heater module of the chemical vapor deposition apparatus, characterized in that by forming a heat insulating member 200 surrounding the lower and side. 제 2항에 있어서,      The method of claim 2, 상기 단열부재(200)는 내부에 진공상태의 공간부를 형성한 것으로, 재질이 SUS, 인슐레이션, 세라믹, 티타늄 중 어느 하나인 것을 특징으로 하는 화학 기상 증착장치의 히터모듈.The heat insulating member 200 is formed in the vacuum space therein, the heater module of the chemical vapor deposition apparatus, characterized in that the material is any one of SUS, insulation, ceramic, titanium.
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KR101228056B1 (en) * 2011-01-03 2013-01-30 주식회사 대하이노텍 Ceramic Coated Metal Susceptor and Method for Manufacturing thereof
KR20170052338A (en) * 2015-11-04 2017-05-12 (주)포인트엔지니어링 Susceptor and Vaccum chamber including the same
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