KR20050106405A - 압전 소자 - Google Patents
압전 소자 Download PDFInfo
- Publication number
- KR20050106405A KR20050106405A KR1020057014001A KR20057014001A KR20050106405A KR 20050106405 A KR20050106405 A KR 20050106405A KR 1020057014001 A KR1020057014001 A KR 1020057014001A KR 20057014001 A KR20057014001 A KR 20057014001A KR 20050106405 A KR20050106405 A KR 20050106405A
- Authority
- KR
- South Korea
- Prior art keywords
- piezoelectric
- electrostrictive
- piezoelectric material
- twin
- piezoelectric element
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 360
- 239000013078 crystal Substances 0.000 claims abstract description 56
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 59
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 17
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 44
- 230000000052 comparative effect Effects 0.000 description 30
- 238000005259 measurement Methods 0.000 description 28
- 238000002441 X-ray diffraction Methods 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000013507 mapping Methods 0.000 description 11
- 238000007639 printing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910002367 SrTiO Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 238000007716 flux method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- DUPIXUINLCPYLU-UHFFFAOYSA-N barium lead Chemical compound [Ba].[Pb] DUPIXUINLCPYLU-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229940036348 bismuth carbonate Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/095—Forming inorganic materials by melting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
제1 실시예 | 비교예1 | |
쌍정(쌍정율) | 있음 (1.0) | 없음 |
압전 상수(pC/N) | 2500 | 1800 |
제2 실시예 | 제3 실시예 | 비교예2 | |
쌍정(쌍정율) | 있음 (1.0) | 있음 (0.01) | 없음 |
압전 상수 (pC/N) | 600 | 500 | 300 |
제4 실시예 | 비교예3 | |
쌍정 | 있음 | 없음 |
변위량 (㎛) | 0.45 | 0.25 |
박리 테스트 | 우수함 | 나쁘지도 좋지도 않음 |
제5 실시예 | 비교예4 | |
쌍정 | 있음 | 없음 |
토출량 (pl) | 19 | 15 |
토출 속도 (m/sec) | 15 | 12 |
Claims (16)
- 상부 전극, 압전 재료(piezoelectric material) 및/또는 전왜 재료(electrostrictive material) 및 하부 전극을 포함하는 압전 소자이며,상기 압전 재료 및/또는 전왜 재료는 일반식 ABO3으로 구성된 복합 산화물이고 상기 압전 재료 및/또는 전왜 재료는 쌍정을 갖는 것을 특징으로 하는 압전 소자.
- 제1항에 있어서,상기 쌍정은 {110}으로 표시된 군으로부터 선택된 쌍정면을 갖는 압전 소자.
- 제1항에 있어서,상기 쌍정은 {100}으로 표시된 군으로부터 선택된 쌍정면을 갖는 압전 소자.
- 제2항에 있어서,상기 압전 재료 및/또는 전왜 재료는 정방정 결정(tetragonal crystal)인 압전 소자.
- 제2항에 있어서,상기 압전 재료 및/또는 전왜 재료는 사방정 결정(rhombic crystal)인 압전 소자.
- 제2항에 있어서,상기 압전 재료 및/또는 전왜 재료는 마름모 결정(rhombohedral crystal)인 압전 소자.
- 제1항에 있어서,상기 압전 재료 및/또는 전왜 재료는 0.001 내지 1.0의 쌍정율을 갖는 압전 소자.
- 제1항에 있어서,상기 압전 재료 및/또는 전왜 재료는 배향성(orientation property)을 갖는 압전 소자.
- 제8항에 있어서,상기 압전 재료 및/또는 전왜 재료는 적어도 한 축 방향으로 99% 이상의 배향율을 갖는 압전 소자.
- 제8항에 있어서,상기 압전 재료 및/또는 전왜 재료는 상기 상부 전극과 접촉하는 주요 결정면 {100}을 갖는 압전 소자.
- 제8항에 있어서,상기 압전 재료 및/또는 전왜 재료는 상기 상부 전극과 접촉하는 주요 결정면 {111}을 갖는 압전 소자.
- 제8항에 있어서,상기 압전 재료 및/또는 전왜 재료는 상기 상부 전극과 접촉하는 주요 결정면 {110}을 갖는 압전 소자.
- 제1항에 있어서,상기 하부 전극 및 상기 압전 재료 및/또는 전왜 재료는 상기 기판 상에 직접 형성되는 압전 소자.
- 제13항에 있어서,상기 압전 재료 및/또는 전왜 재료를 구비한 층이 1 내지 10㎛ 두께로 형성되는 압전 소자.
- 제1항에 따른 압전 소자를 이용한 압전 액튜에이터.
- 제1항에 따른 압전 소자를 이용한 잉크젯 기록 헤드.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003024452 | 2003-01-31 | ||
JPJP-P-2003-00024452 | 2003-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050106405A true KR20050106405A (ko) | 2005-11-09 |
KR100672883B1 KR100672883B1 (ko) | 2007-01-24 |
Family
ID=32820765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057014001A KR100672883B1 (ko) | 2003-01-31 | 2004-01-30 | 압전 소자 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7144101B2 (ko) |
EP (1) | EP1588437B1 (ko) |
KR (1) | KR100672883B1 (ko) |
CN (1) | CN100590902C (ko) |
AT (1) | ATE537568T1 (ko) |
WO (1) | WO2004068605A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100830626B1 (ko) * | 2005-03-28 | 2008-05-20 | 세이코 엡슨 가부시키가이샤 | 압전부재, 액츄에이터 장치, 액체분사 헤드 및 액체분사장치 |
KR100901201B1 (ko) * | 2008-02-22 | 2009-06-08 | 서울시립대학교 산학협력단 | 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법 |
KR101113490B1 (ko) * | 2006-07-18 | 2012-03-13 | 캐논 가부시끼가이샤 | 압전체, 압전체 소자, 및 압전체 소자를 이용한 액체 토출 헤드 및 액체 토출 장치 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4717344B2 (ja) | 2003-12-10 | 2011-07-06 | キヤノン株式会社 | 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド |
US7235917B2 (en) * | 2004-08-10 | 2007-06-26 | Canon Kabushiki Kaisha | Piezoelectric member element and liquid discharge head comprising element thereof |
US8082640B2 (en) * | 2004-08-31 | 2011-12-27 | Canon Kabushiki Kaisha | Method for manufacturing a ferroelectric member element structure |
JP2006069152A (ja) * | 2004-09-06 | 2006-03-16 | Canon Inc | インクジェットヘッド及びその製造方法 |
SG124303A1 (en) | 2005-01-18 | 2006-08-30 | Agency Science Tech & Res | Thin films of ferroelectric materials and a methodfor preparing same |
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US8142678B2 (en) * | 2005-08-23 | 2012-03-27 | Canon Kabushiki Kaisha | Perovskite type oxide material, piezoelectric element, liquid discharge head and liquid discharge apparatus using the same, and method of producing perovskite type oxide material |
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Cited By (3)
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KR100830626B1 (ko) * | 2005-03-28 | 2008-05-20 | 세이코 엡슨 가부시키가이샤 | 압전부재, 액츄에이터 장치, 액체분사 헤드 및 액체분사장치 |
KR101113490B1 (ko) * | 2006-07-18 | 2012-03-13 | 캐논 가부시끼가이샤 | 압전체, 압전체 소자, 및 압전체 소자를 이용한 액체 토출 헤드 및 액체 토출 장치 |
KR100901201B1 (ko) * | 2008-02-22 | 2009-06-08 | 서울시립대학교 산학협력단 | 초음파 스피커용 세슘디옥사이드가 첨가된피에스엔-피지티 세라믹스의 제조방법 |
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US7517063B2 (en) | 2009-04-14 |
WO2004068605A1 (en) | 2004-08-12 |
KR100672883B1 (ko) | 2007-01-24 |
US7144101B2 (en) | 2006-12-05 |
EP1588437A1 (en) | 2005-10-26 |
CN1745486A (zh) | 2006-03-08 |
ATE537568T1 (de) | 2011-12-15 |
US20060012648A1 (en) | 2006-01-19 |
US20060256167A1 (en) | 2006-11-16 |
EP1588437A4 (en) | 2010-03-24 |
CN100590902C (zh) | 2010-02-17 |
EP1588437B1 (en) | 2011-12-14 |
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