KR20050039273A - Module integrated solar cell and method for manufacturing the same - Google Patents
Module integrated solar cell and method for manufacturing the same Download PDFInfo
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- KR20050039273A KR20050039273A KR1020030074703A KR20030074703A KR20050039273A KR 20050039273 A KR20050039273 A KR 20050039273A KR 1020030074703 A KR1020030074703 A KR 1020030074703A KR 20030074703 A KR20030074703 A KR 20030074703A KR 20050039273 A KR20050039273 A KR 20050039273A
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- 238000000034 method Methods 0.000 title claims abstract description 21
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
본 발명은 모듈일체형 태양전지 및 그 제조방법에 관한 것으로서, p-형 실리콘기판(120)에 피라미드 표면구조를 형성하는 단계와; p-형 실리콘기판(120)의 전,후면에 산화막을 형성하는 단계와; 후면절연박막층(130)에 베이스전극(170)을 형성하는 단계와; 후면절연박막층(130)에 n++형 에미터층(150)을 형성하는 단계와; 단위 태양전지(100')간에 절연박막(160)을 형성하는 단계와; 베이스전극(170)에 p++형 후면전계층(140)을 형성하는 단계와; 에미터전극(180)과, 출력전극(190a)(190b), 절연박막(160)상에 연결용 전극으로 은을 형성하는 단계와; p-형 실리콘기판(120)의 후면에 밀봉층(200)을 형성하는 단계와; 전기적 특성을 검사하는 단계;를 포함한 방법으로 태양전지(100)를 제조한다.The present invention relates to a module integrated solar cell and a method of manufacturing the same, comprising the steps of: forming a pyramid surface structure on a p-type silicon substrate (120); forming oxide films on the front and rear surfaces of the p-type silicon substrate 120; Forming a base electrode 170 on the back insulation thin film layer 130; Forming an n ++ type emitter layer 150 on the back insulating thin film layer 130; Forming an insulating thin film 160 between unit solar cells 100 '; Forming a p ++ type back field layer 140 on the base electrode 170; Forming silver on the emitter electrode 180, the output electrodes 190a, 190b, and the insulating thin film 160 as a connecting electrode; forming a sealing layer 200 on a rear surface of the p-type silicon substrate 120; The solar cell 100 is manufactured by the method including the step of inspecting the electrical characteristics.
Description
본 발명은 모듈일체형 태양전지 및 그 제조방법에 관한 것으로서, 보다 상세하게는 태양전지의 양극과 음극을 절연막으로 분리하고, 이 절연막 위에 집적화된 연결전극을 형성하여 집적화한 모듈일체형 태양전지 및 그 제조방법에 관한 것이다.The present invention relates to a module integrated solar cell and a method of manufacturing the same, and more particularly, a module integrated solar cell integrated with a cathode and a cathode of a solar cell separated by an insulating film, and formed by forming an integrated connection electrode on the insulating film. It is about a method.
일반적으로, 태양전지를 특정시스템에 적용하기 위해서는 특정부하의 수요전력량을 계산하고, 태양전지와 태양전지 모듈에서 발생하는 전력량을 부하의 필요전력량으로 공급하고, 추가로 여유전력량을 더한 값을 태양전지 모듈의 용량으로 결정한다. 실리콘 태양전지의 경우 태양전지 1개에서 얻을 수 있는 특성은 전압이 0.5V 정도로 고정되고, 전류는 면적의 변화에 따라서 단위 면적당 약 30mA의 정도의 전류를 생산할 수 있다.In general, in order to apply a solar cell to a specific system, the amount of power demanded for a specific load is calculated, the power generated from the solar cell and the solar cell module is supplied as the required power of the load, and the additional power is added to the solar cell. Determined by the capacity of the module. In the case of silicon solar cells, the characteristics obtained in one solar cell are fixed at about 0.5V, and the current can produce about 30mA of current per unit area according to the change of area.
따라서, 모듈의 필요 전압을 높이기 위해서는 직렬로 태양전지를 연결하고, 필요전류 용량에 따라서 태양전지의 면적을 가변시킨다. 이때 기존의 상용 축전지용량 때문에 4개, 8개, 12개, 16개, 24개, 36개, 54개 등으로 직렬 연결하여 태양전지 모듈을 구성한다.Therefore, in order to increase the required voltage of the module, the solar cells are connected in series, and the area of the solar cell is varied according to the required current capacity. At this time, due to the existing commercial battery capacity, 4, 8, 12, 16, 24, 36, 54, etc. are connected in series to form a solar cell module.
첨부도면 도 1은, 태양전지를 연결함에 따른 V-I 특성곡선을 나타낸 도면으로서, 도 1a는 두 개의 태양전지를 직렬연결함에 따른 V-I 특성곡선을 도시한 도면이고, 도 1b는 두 개의 태양전지를 병렬연결함에 따른 V-I 특성곡선을 도시한 도면이다.1 is a diagram showing a VI characteristic curve according to connecting solar cells, FIG. 1A shows a VI characteristic curve according to two solar cells connected in series, and FIG. 1B shows two solar cells in parallel. The VI characteristic curve according to the connection is shown.
도 1a에 도시된 바와 같이, 두 개의 태양전지를 같은 일사조건에서 서로 직렬로 연결했을 경우, 양단전압은 한 개의 전지전압의 두 배가 되고, 전류는 한 개의 전지에서 발생된 전류의 크기와 같게 되어 V = Vc1 + Vc2, I = Ic1 = Ic2 가 된다. 따라서 여러 개의 태양전지가 직렬로 연결된 경우에 태양전지의 출력전류는 한 개의 전지에서 발생된 전류의 크기와 같고, 출력전압은 식(1)와 같이 나타낼 수 있다.As shown in FIG. 1A, when two solar cells are connected in series under the same solar condition, the voltages at both ends thereof are twice the voltage of one cell, and the current is equal to the magnitude of the current generated in one cell. V = Vc 1 + Vc 2 , I = Ic 1 = Ic 2 . Therefore, when several solar cells are connected in series, the output current of the solar cell is equal to the magnitude of the current generated in one cell, and the output voltage can be expressed as Equation (1).
Va = Ns ×Vc (1)Va = Ns × Vc (1)
Va : 태양전지 출력전압Va: Solar cell output voltage
Ns : 직렬 연결된 태양전지의 수Ns: Number of solar cells connected in series
Vc : 태양전지 한 개의 출력전압Vc: output voltage of one solar cell
또한, 도 1b에 도시된 바와 같이, 병렬 연결된 태양전지의 특성은 태양전지가 서로 똑같은 일사조건이나 재질의 특성이 물성적으로나 전기적으로 같은 특성을 갖고 있는 경우에는, V = Vc1 = Vc2, I = Ic1 + Ic2 가 된다. 그러므로 여러개의 태양전지가 병렬로 연결된 경우, 태양전지의 출력전류는 식(2)와 같이 나타낼 수 있다.In addition, as shown in FIG. 1B, the characteristics of solar cells connected in parallel are equal to each other when the solar cells have the same solar conditions or material properties, which are physically and electrically the same. V = Vc 1 = Vc 2 , I = Ic 1 + Ic 2 . Therefore, when several solar cells are connected in parallel, the output current of the solar cell can be expressed as Equation (2).
Ia(V) = Np ×I(V) (2)Ia (V) = Np × I (V) (2)
Ia(V) : 태양전지의 출력전류Ia (V): output current of solar cell
Np : 병렬 연결된 태양전지의 수Np: Number of parallel solar cells
I(V) : 태양전지 한 개의 출력전류I (V): output current of one solar cell
한편, 위와 같은 태양전지 제조와 검사가 끝나면, 첨부도면 도 2a 및 도 2b에 도시된 바와 같은 10와트(Watt) 미만급의 태양전지 모듈을 제조한다.On the other hand, after the solar cell manufacturing and inspection as described above, to produce a solar cell module of less than 10 Watt (Watt) class as shown in the accompanying drawings, Figure 2a and 2b.
먼저, 응용제품의 전력 용량에 따라서 필요한 전류용량에 맞추어 태양전지(10)를 절단하고, 절단한 태양전지(10)를 각각 전기적으로 직렬로 연결하도록 외부배선재료인 연결탭(20)을 달아서 상기 태양전지(10)를 모두 연결하는 회로를 구성한다.First, the solar cell 10 is cut according to the required current capacity according to the power capacity of the application product, and the connection tab 20, which is an external wiring material, is connected to the electrically connected series in order to electrically connect the cut solar cells 10, respectively. A circuit for connecting all of the solar cells 10 is configured.
그리고, 상기 회로가 구성되면, 그 전면에 외부의 빛은 잘 투과하면서도 전기적으로는 절연 특성을 가지는 강화유리(50)로서 회로를 봉인한다. 여기서, 본 실시예에서는 강화유리(50)로 봉인하였지만, 절연막이 코팅된 알루미늄 호일이나 플라스틱으로 봉인하여도 무방하다.Then, when the circuit is configured, the circuit is sealed with tempered glass 50 having externally transmitted light well on its front surface and having an electrically insulating property. Here, in the present embodiment, although sealed with tempered glass 50, the insulating film may be sealed with a coated aluminum foil or plastic.
또한, 상기 강화유리(50)와 회로 사이에는 고분자 화합물인 에폭시 수지에 각종 배합제를 가하여 제조한 투명도가 높은 열경화성 수지(EVA)(30)를 도포하여 태양전지(10)를 밀봉하고, 밀봉된 태양전지(10)는 접착공정이나 모듈화공정에서 발생된 손상여부 등을 검사하는 최종 검사가 끝나면 모든 제조과정이 완료된다.In addition, between the tempered glass 50 and the circuit is coated with a highly transparent thermosetting resin (EVA) 30 produced by adding various compounding agents to the epoxy resin as a polymer compound to seal the solar cell 10, The solar cell 10 is all the manufacturing process is completed after the final inspection to check whether the damage occurred in the bonding process or modularization process.
여기서, 미설명부호 "40"은 모듈뒷판을 도시한 것이다.Here, reference numeral "40" shows the module back plate.
그러나, 이와 같은 종래의 태양전지는, 태양전지 모듈을 제조하기 위해서 태양전지(10) 앞면과 뒷면에 형성된 전극에 별도의 연결탭(20)을 설치하여 서로 연결하는 과정에서 태양전지(10)를 정위치로 정열함에 있어 많은 어려움이 있고, 태양전지(10)와 연결탭(20)간의 접촉 불량이 발생되는 문제점이 있었다.However, such a conventional solar cell, the solar cell 10 in the process of connecting to each other by installing a separate connection tab 20 to the electrodes formed on the front and rear of the solar cell 10 to manufacture a solar cell module. There are many difficulties in aligning in place, and there is a problem in that a poor contact between the solar cell 10 and the connection tab 20 occurs.
그리고, 태양전지 모듈에서 필수적으로 사용되는 밀봉 및 접착을 위한 열경화성 수지(30)는, 태양광에 노출시에 일정기간 즉, 대략 10년 이내에 변색과 성능저하가 야기되고, 그로 인해 결국에는 태양전지 모듈 자체의 성능이 저하되는 문제점이 있었다. In addition, the thermosetting resin 30 for sealing and adhesion, which is essentially used in the solar cell module, causes discoloration and deterioration within a certain period of time, that is, about 10 years when exposed to sunlight, thereby eventually causing a solar cell. There was a problem that the performance of the module itself is reduced.
이에, 본 발명은 전술한 바와 같은 종래기술의 문제점을 해소하기 위해 안출된 것으로, 태양전지의 양극과 음극을 절연막으로 분리하고, 이 절연막 위에 집적화된 연결전극을 형성하여, 태양전지 모듈 제조에 있어 가격상승 요인인 절단과 직렬연결에 소요되던 추가공정 인력, 시간, 모듈제조 소모품 등이 필요없게 되어 제조원가를 절감시킬 수 있는 모듈일체형 태양전지 및 그 제조방법을 제공하는데 그 목적이 있다. Accordingly, the present invention has been made to solve the problems of the prior art as described above, by separating the positive electrode and the negative electrode of the solar cell with an insulating film, forming an integrated connection electrode on the insulating film, in the solar cell module manufacturing The purpose of the present invention is to provide a module-integrated solar cell and a method of manufacturing the same, which can reduce manufacturing costs by eliminating the need for additional process manpower, time, and module manufacturing consumables, which are required for cutting and series connection, which are factors to increase prices.
상술한 목적을 달성하기 위한 본 발명의 모듈일체형 태양전지는, 피라미드 표면구조를 갖는 p-형 실리콘기판과; 상기 p-형 실리콘기판의 전,후면에 각각 산화된 전면반사방지막층 및 후면절연박막층과; 상기 후면절연박막층에 매설되어 형성된 집적화된 베이스전극 및 에미터전극과; 상기 양 전극에 태양전지 에미터와 베이스에 오옴성 접촉을 위해 각각 도핑되어 형성된 고농도 p++형 후면전계층 및 n++형 에미터층과; 하나의 빗살모양으로 공통된 베이스전극과 다른 하나의 빗살모양으로 공통된 에미터전극으로 이루어진 단위 태양전지를 서로 연결할 때 전기적으로 절연시키는 절연박막과; 일측의 베이스전극과 일측의 에미터전극에 각각 연결된 양극출력전극 및 음극출력전극과; 상기 베이스전극과 에미터전극을 외부와 절연시키는 밀봉층;을 포함하여 구성된 것을 특징으로 한다.Module integrated solar cell of the present invention for achieving the above object is a p-type silicon substrate having a pyramid surface structure; A front antireflection film layer and a back insulation thin film layer oxidized on the front and rear surfaces of the p-type silicon substrate, respectively; An integrated base electrode and an emitter electrode embedded in the back insulation thin film layer; A high concentration p ++ type backfield layer and an n ++ type emitter layer formed by doping each electrode for ohmic contact with a solar cell emitter and a base; An insulating thin film which electrically insulates when connecting unit solar cells each having a common base electrode in one comb shape and a emitter electrode in common in a comb shape; An anode output electrode and a cathode output electrode connected to one base electrode and one emitter electrode, respectively; And a sealing layer that insulates the base electrode and the emitter electrode from the outside.
그리고, 상기 베이스전극은, 알루미늄(Al) 금속으로 이루어지고, 상기 절연박막은, 산화티타늄(TiO2) 또는 산화규소(SiO2) 중 어느 하나로 이루어진다.The base electrode is made of aluminum (Al), and the insulating thin film is made of one of titanium oxide (TiO 2 ) or silicon oxide (SiO 2 ).
또한, 상기 에미터전극과, 출력전극, 절연박막에는, 은(Ag)이 스크린 인쇄된다.In addition, silver (Ag) is screen printed on the emitter electrode, the output electrode, and the insulating thin film.
한편, 본 발명의 모듈일체형 태양전지 제조방법은, p-형 실리콘기판을 가열 세척하여 그 표면구조를 피라미드형으로 형성하는 단계와; 상기 p-형 실리콘기판에 고온 열처리하여 전,후면에 각각 산화된 전면반사방지막층과 후면절연박막층을 형성하는 단계와; 상기 후면절연박막층에 베이스전극을 스크린 인쇄하여 건조시키는 단계와; 상기 후면절연박막층에 n++형 에미터층을 스크린 인쇄하여 건조시키는 단계와; 상기 n++형 에미터층에 형성된 하나의 빗살모양으로 공통된 에미터전극과 다른 하나의 빗살모양으로 공통된 베이스전극으로 이루어진 단위 태양전지간의 연결부에 절연박막을 스크린 인쇄하여 건조시키는 단계와; 상기 p-형 실리콘기판을 고온 열처리하여 베이스전극상에 p++형 후면전계층을 형성하는 단계와; 상기 일측의 베이스전극과 에미터전극에 각각 연결되어 모듈출력에 사용되는 출력전극과, 에미터전극, 절연박막상에 연결용 전극으로 은을 스크린 인쇄하여 건조시키고 소성시키는 단계와; 상기 p-형 실리콘기판의 후면에 밀봉을 위한 잉크를 스크린 인쇄하여 건조시키는 단계;를 포함하여 구성된 것을 특징으로 한다.On the other hand, the module integrated solar cell manufacturing method of the present invention comprises the steps of: heating the p-type silicon substrate to form a surface structure of the pyramid; Heat-treating the p-type silicon substrate to form an oxidized front anti-reflective coating layer and a back insulating thin film layer on the front and rear surfaces, respectively; Screen-printing and drying a base electrode on the back insulation thin film layer; Screen-printing and drying an n ++ type emitter layer on the back insulation thin film layer; Screen-printing and drying an insulating thin film at a connection portion between a unit solar cell formed of one comb-shaped common emitter electrode formed on the n ++ type emitter layer and a base electrode common to the other comb-shaped; Thermally treating the p-type silicon substrate to form a p ++ type back field layer on a base electrode; Screen-printing and drying and firing silver with an output electrode used for module output connected to the base electrode and the emitter electrode on one side, and the connecting electrode on the emitter electrode and the insulating thin film; And drying the screen printing ink for sealing on the rear surface of the p-type silicon substrate.
그리고, 상기 p-형 실리콘기판은, 수산화나트륨(NaOH)과 이소-프로필 알코올(IPA : Iso-Propyl Alcohol)과 물(H2O)의 혼합용액속에서 70도로 가열되고 25분간 세척된다.The p-type silicon substrate is heated to 70 degrees in a mixed solution of sodium hydroxide (NaOH), iso-propyl alcohol (IPA: Iso-Propyl Alcohol), and water (H 2 O) and washed for 25 minutes.
이하, 본 발명의 바람직한 실시예를 첨부도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
첨부도면 도 3 내지 도 5는, 본 발명에 따른 태양전지를 도시한 도면이다.3 to 5 show a solar cell according to the present invention.
본 발명의 모듈일체형 태양전지(100)는 도시된 바와 같이, 피라미드 표면구조를 갖는 p-형 실리콘기판(120)의 전,후면에 전면반사방지막층(110)과, 후면절연박막층(130)을 각각 산화시켜 형성하고, 상기 후면절연박막층(130)에 집적화된 베이스전극(170)과 에미터전극(180)을 형성하며, 상기 양 전극(170)(180)에 태양전지 에미터와 베이스에 오옴성 접촉을 위한 고농도 p++형 후면전계층(140)과 n++형 에미터층(150)을 각각 도핑하여 형성하고, 빗살모양으로 하나의 공통된 베이스전극(170)과 하나의 공통된 에미터전극(180)으로 이루어진 단위 태양전지(100')를 서로 연결할 때 전기적으로 절연시키기 위한 절연박막(160)을 형성하며, 일측의 베이스전극(170)과 일측의 에미터전극(180)에 양극출력전극(190a)과 음극출력전극(190b)을 각각 연결하고, 상기 베이스전극(170)과 에미터전극(180)을 외부와 절연시키기 위한 밀봉층(200)을 형성하여 구성된다.As illustrated, the module integrated solar cell 100 includes a front antireflection film layer 110 and a rear insulating thin film layer 130 on the front and rear surfaces of the p-type silicon substrate 120 having a pyramid surface structure. Respectively formed by oxidizing, forming a base electrode 170 and an emitter electrode 180 integrated in the back insulation thin film layer 130, and forming a solar cell emitter and a base on both electrodes 170 and 180. It is formed by doping the high concentration p ++ type backfield layer 140 and the n ++ type emitter layer 150 for the sexual contact, respectively, in the shape of a comb to one common base electrode 170 and one common emitter electrode 180. When the unit solar cell 100 ′ is formed, the insulating thin film 160 is electrically insulated from each other, and the anode output electrode 190a and the base electrode 170 on one side and the emitter electrode 180 on one side are formed. The cathode output electrode 190b is connected to each other, and the base electrode 170 and the emitter are connected. It is configured to form a sealing layer 200 for insulating the electrode 180 and the outside.
그리고, 상기 베이스전극(170)은, 알루미늄(Al) 금속으로 이루어지고, 상기 절연박막(160)은, 산화티타늄(TiO2) 또는 산화규소(SiO2) 중 어느 하나로 이루어진다.The base electrode 170 is made of aluminum (Al), and the insulating thin film 160 is made of either titanium oxide (TiO 2 ) or silicon oxide (SiO 2 ).
또한, 상기 에미터전극(180)과, 출력전극(190a)(190b), 절연박막(160)에는, 은(Ag)이 스크린 인쇄되어 형성된다.In addition, silver (Ag) is screen-printed on the emitter electrode 180, the output electrodes 190a, 190b, and the insulating thin film 160.
한편, 상기 태양전지(100)의 기판재료로 사용한 실리콘기판(120)은 p-형으로, 비저항 0.1 ohm-cm에서 10 ohm-cm까지의 범위 값을 가지고, 그 전면부의 면적의 크기범위는 도 4a에 도시한 바와 같이 4" , 5" , 6" , 8" , 12" 등이 전형적인 크기이다. 도 4b에서는 다결정 실리콘기판(120)의 면적을 도시하였고, 비저항 0.5 ohm-cm에서 3 ohm-cm까지의 범위 값을 가진다.On the other hand, the silicon substrate 120 used as the substrate material of the solar cell 100 is p-type, has a value ranging from 0.1 ohm-cm to 10 ohm-cm of resistivity, and the size range of the area of the front part is shown in FIG. 4 ", 5 ", 6 ", 8 ", 12 ", etc. are typical sizes as shown in 4a. In FIG. 4b, the area of the polycrystalline silicon substrate 120 is shown, and the resistivity is 0.5 ohm-cm and 3 ohm-. It has a range up to cm.
상기와 같이 구성된 본 발명에 따른 모듈일체형 태양전지는 다음과 같은 공정에 의해 제조된다.Module integrated solar cell according to the present invention configured as described above is manufactured by the following process.
첨부도면 도 6은, 본 발명에 따른 태양전지의 제조방법을 도시한 블록도이다.6 is a block diagram illustrating a method of manufacturing a solar cell according to the present invention.
본 발명의 모듈일체형 태양전지(100) 제조는 도시된 바와 같이, p-형 실리콘기판(120)에 피라미드 표면구조를 형성하는 단계와; p-형 실리콘기판(120)의 전,후면에 산화막을 형성하는 단계와; 후면절연박막층(130)에 베이스전극(170)을 형성하는 단계와; 후면절연박막층(130)에 n++형 에미터층(150)을 형성하는 단계와; 단위 태양전지(100')간에 절연박막(160)을 형성하는 단계와; 베이스전극(170)에 p++형 후면전계층(140)을 형성하는 단계와; 에미터전극(180)과, 출력전극(190a)(190b), 절연박막(160)상에 연결용 전극으로 은을 형성하는 단계와; p-형 실리콘기판(120)의 후면에 밀봉층(200)을 형성하는 단계와; 전기적 특성을 검사하는 단계;를 통해 완성된다.Manufacturing of the module-integrated solar cell 100 of the present invention, as shown, forming a pyramid surface structure on the p-type silicon substrate 120; forming oxide films on the front and rear surfaces of the p-type silicon substrate 120; Forming a base electrode 170 on the back insulation thin film layer 130; Forming an n ++ type emitter layer 150 on the back insulating thin film layer 130; Forming an insulating thin film 160 between unit solar cells 100 '; Forming a p ++ type back field layer 140 on the base electrode 170; Forming silver on the emitter electrode 180, the output electrodes 190a, 190b, and the insulating thin film 160 as a connecting electrode; forming a sealing layer 200 on a rear surface of the p-type silicon substrate 120; Checking the electrical characteristics; is completed through.
이를 보다 구체적으로 설명하면, p-형 실리콘기판(120)을 수산화나트륨(NaOH)과 이소-프로필 알코올(IPA : Iso-Propyl Alcohol)과 물(H2O)의 혼합용액속에서 70도로 가열하고 25분간 세척하여 그 표면구조를 피라미드형으로 형성한다.More specifically, the p-type silicon substrate 120 is heated to 70 degrees in a mixed solution of sodium hydroxide (NaOH), iso-propyl alcohol (IPA: Iso-Propyl Alcohol) and water (H 2 O), and Wash for 25 minutes to form a pyramidal surface structure.
이때, 가열온도가 70도를 초과할 경우에는, 스크린 인쇄시에 형성되는 피라미드 구조물의 높이가 높아져 스크린 인쇄기의 스크린 손상이 가속화되고, 화학물의 휘발성이 증가되어 제조비용의 상승을 초래하는 단점이 있고, 70도 미만인 경우에는, 피라미드 구조물이 형성되는 시간이 길어져 생산성이 저하되는 단점이 있다.At this time, when the heating temperature exceeds 70 degrees, there is a disadvantage that the height of the pyramid structure formed during the screen printing is increased to accelerate the screen damage of the screen printing machine, the volatility of the chemical is increased, leading to an increase in the manufacturing cost If less than 70 degrees, there is a disadvantage in that the time for which the pyramid structure is formed is long and productivity is lowered.
또한, 세척시간이 25분를 초과할 경우에는, 피라미드 구조물의 높이가 증가하고, 제조시간이 길어져 생산성이 저하되는 단점이 있고, 25분 미만인 경우에는, 피라미드 구조물의 형성함에 있어 생산성과 빛 포획이 가장 적합한 높이인 3∼4 마이크로미터(Micrometer)를 형성하기가 어렵다.In addition, if the cleaning time exceeds 25 minutes, the height of the pyramid structure increases, the production time is long, there is a disadvantage that the productivity is lowered, if less than 25 minutes, the productivity and light capture in forming the pyramid structure is most It is difficult to form a suitable height of 3 to 4 micrometers.
이후, 상기 p-형 실리콘기판(120)에 850도 이상의 고온 튜브로에서 열처리하여 전,후면에 각각 산화된 전면반사방지막층(110)과 후면절연박막층(130)을 형성한다.Thereafter, the p-type silicon substrate 120 is heat-treated in a high temperature tube furnace of 850 degrees or more to form an oxidized front antireflection film layer 110 and a back insulation thin film layer 130 on the front and rear surfaces, respectively.
그리고, Nd YAG 레이져를 이용하여 후면절연박막층(130)에 전극(170)(180)을 형성하기 위한 홈을 25 마이크로미터(Micrometer)의 깊이와, 100 마이크로미터의 폭으로 형성한다.The Nd YAG laser is used to form grooves for forming the electrodes 170 and 180 in the back insulating thin film layer 130 with a depth of 25 micrometers and a width of 100 micrometers.
상기와 같이 형성된 빗살모양으로 하나의 공통된 홈에 알루미늄 금속을 스크린 인쇄하여 250도의 벨트 퍼니스(Furnace)에서 건조함으로써 베이스전극(170)을 형성하고, 상기 다른 하나의 빗살모양으로 공통된 하나의 홈에 n++형 에미터층(150)을 스크린 인쇄용 페이스트(Paste)를 이용하여 형성하고 250도의 벨트 퍼니스에서 건조시킨다.The base electrode 170 is formed by screen printing aluminum metal in one common groove in the shape of a comb as described above and drying in a belt furnace at 250 degrees, and n ++ in one groove common in the other comb shape. The mold emitter layer 150 is formed using a screen printing paste and dried in a belt furnace at 250 degrees.
그리고, 상기 하나의 공통된 베이스전극(170)과 다른 하나의 공통된 n++형 에미터층(150)위에 형성한 에미터전극(180)으로 이루어진 단위 태양전지(100')가 서로 연결되는 연결부에 산화티타늄(TiO2) 또는 산화규소(SiO2) 중 어느 하나의 페이스트를 이용하여 절연박막(160)을 스크린 인쇄하고, 250도의 벨트 퍼니스에서 건조시킨 후, IR 램프 고온 벨트형 확산로에서 850도의 고온으로 열처리하면, 베이스전극(170)층에서 p++형 후면전계층(140)이 형성되고, n++형 에미터층(150)은 0.7 마이크로미터의 깊이까지 침투하여 확산된다.Titanium oxide (T) is connected to a connection portion between the unit solar cell 100 ′ formed of the emitter electrode 180 formed on the common base electrode 170 and the other common n ++ type emitter layer 150. Screen printing of the insulating thin film 160 using a paste of either TiO 2 ) or silicon oxide (SiO 2 ), drying in a belt furnace at 250 degrees, and heat treatment at a high temperature of 850 degrees in an IR lamp high temperature belt type diffusion furnace. The p ++ type backfield layer 140 is formed on the base electrode 170 layer, and the n ++ type emitter layer 150 penetrates and diffuses to a depth of 0.7 micrometers.
이후, 상기 n++형 에미터층(150)에 연결되는 에미터전극(180)과, 모듈출력에 사용되는 출력전극(190a)(190b)과, 단위 태양전지(100') 사이의 절연박막(160) 위에 연결용 전극으로 은(Ag) 페이스트를 스크린 인쇄하여 250도의 벨트 퍼니스에서 건조하고, 동일 벨트 퍼니스에서 740도로서 소성한다.Subsequently, the insulating thin film 160 between the emitter electrode 180 connected to the n ++ type emitter layer 150, the output electrodes 190a and 190b used for module output, and the unit solar cell 100 ′. The silver (Ag) paste is screen printed with a connecting electrode on the top, dried in a belt furnace at 250 degrees, and fired at 740 degrees in the same belt furnace.
그리고, 마지막으로 태양전지(100)의 베이스전극(170)과 에미터전극(180)의 노출로 인한 누전을 방지함과 아울러 기계적인 파손을 방지하는 후면 밀봉층(200)을 스크린 인쇄 가능한 잉크를 사용하여 40 마이크로미터 이상의 두께로 스크린 인쇄하고, 200도의 벨트 퍼니스에서 건조한다. 최종적으로 모듈의 전기적 특성을 검사하여 모듈일체형 태양전지(100)의 제조를 완성한다.In addition, the ink may be screen-printed on the rear sealing layer 200 which prevents a short circuit due to exposure of the base electrode 170 and the emitter electrode 180 of the solar cell 100 and prevents mechanical damage. Screen print to a thickness of at least 40 micrometers and dry in a belt furnace at 200 degrees. Finally, the electrical characteristics of the module are examined to complete the manufacture of the module integrated solar cell 100.
상기와 같이 제조된 본 발명의 모듈일체형 태양전지(100)는, 태양전지(100) 자체에서 모듈까지 집적화됨으로써 정열과 접촉으로 인해 발생되던 손실을 방지하고, 접촉저항이 기존보다 저하되어 에너지 변환 효율을 높일 수 있다.The module-integrated solar cell 100 of the present invention manufactured as described above is integrated from the solar cell 100 itself to the module to prevent loss caused by alignment and contact, and the contact resistance is lower than the conventional energy conversion efficiency Can increase.
그리고, 종래 태양전지(10) 전면의 밀봉용 열경화성 수지(30)가 제거되어 태양전지(100) 모듈의 수명이 3배 이상 연장된다.In addition, the sealing thermosetting resin 30 on the front surface of the conventional solar cell 10 is removed to extend the life of the solar cell module 100 by three times or more.
한편, 도 5a에는 출력전압 3V급 단결정 실리콘 모듈일체형 태양전지의 전극부위 평면구조를 도시한 것이다. 크게 4개의 단위 태양전지를 직렬로 연결하여 구성한 예이다. 도 5b에는 출력전압 24V급 다결정 실리콘 모듈일체형 태양전지의 전극부위 평면구조를 도시한 것이다. 단위 태양전지를 직렬로 36개 연결하여 구성한 예이다.On the other hand, Figure 5a shows a planar structure of the electrode portion of the output voltage 3V class single crystal silicon module integrated solar cell. This is an example in which four unit solar cells are connected in series. 5B illustrates a planar structure of an electrode portion of an output voltage 24V polycrystalline silicon module integrated solar cell. This is an example where 36 unit solar cells are connected in series.
또한, 하기의 표 1은 상기의 공정을 통해서 완성된 단결정 실리콘 모듈일체형 태양전지의 출력 10와트 미만급의 다양한 종류별 제원 즉, 출력 와트, 웨이퍼 직경, 면적, 단위 태양전지 수, 단위 태양전지 면적, 출력전류를 나타내었다. 표 2는 완성된 다결정 실리콘 모듈일체형 태양전지의 출력 와트, 웨이퍼 직경, 면적, 단위 태양전지 수, 단위 태양전지 면적, 출력전류를 나타내었다.In addition, Table 1 below is a specification of various types of output of less than 10 watts of the single crystal silicon module integrated solar cell completed through the above process, that is, output watts, wafer diameter, area, unit solar cells, unit solar cell area, The output current is shown. Table 2 shows the output watts, wafer diameter, area, number of unit solar cells, unit solar cell area, and output current of the completed polycrystalline silicon module integrated solar cell.
이상에서 살펴 본 바와 같이, 본 발명의 모듈일체형 태양전지 및 그 제조방법에 의하면, 종래의 태양전지 절단, 별도의 연결탭 부착, 모듈회로 구성, 열경화성 수지를 이용한 밀봉 등과 같은 작업이 생략되므로 제조원가가 절감된다.As described above, according to the module-integrated solar cell of the present invention and a method for manufacturing the same, manufacturing costs are omitted since conventional solar cell cutting, attaching a separate connection tab, module circuit configuration, sealing using a thermosetting resin, and the like are omitted. Savings.
그리고, 종래에 태양광의 자외선에 장기간 노출되면, 변색, 갈라짐 등의 노화현상으로 태양전지 모듈의 수명에 한계를 주던 주요원인인 수지계열 접착제(열경화성 수지)가 제거되므로 태양전지의 수명이 3배 이상 연장된다.In addition, the long life of the solar cell is more than three times as the resin-based adhesive (thermosetting resin), which is the main cause of the lifespan of the solar cell module, is limited due to the aging phenomenon such as discoloration and cracking after long-term exposure to ultraviolet rays of sunlight. Is extended.
또한, 본 발명에서는 단위 태양전지간의 연결이 태양전지 자체에서 일어남으로써 자동정열되고, 접촉저항도 저하되어 효율이 향상된다.In addition, in the present invention, the connection between the unit solar cells is automatically aligned by the solar cell itself, and the contact resistance is also lowered to improve the efficiency.
또한, 본 발명에서는 10watt 미만급 모듈에서 성능개선, 가격하락, 제조공정 소요시간 단축, 모듈 수명시간 장시간 신뢰도 등에서 기존의 한계를 극복하여 태양전지 산업에 활성화를 가지고 올 수 있는 이점이 있다.In addition, the present invention has the advantage that can bring the activation to the solar cell industry by overcoming the existing limitations in performance improvement, price reduction, shortening the manufacturing process time, module life time long-term reliability, etc. in less than 10watt module.
한편, 상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술분야의 통상의 지식을 가진 자라면 하기의 청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다. On the other hand, while described above with reference to a preferred embodiment of the present invention, those skilled in the art that various modifications of the present invention without departing from the spirit and scope of the invention described in the claims below It will be appreciated that modifications and variations can be made.
도 1은, 태양전지를 연결함에 따른 V-I 특성곡선을 나타낸 도면으로서, 도 1a는 태양전지를 직렬연결함에 따른 V-I 특성곡선을 도시한 도면이고, 도 1b는 태양전지를 병렬연결함에 따른 V-I 특성곡선을 도시한 도면이다.1 is a view showing a VI characteristic curve according to connecting solar cells, Figure 1a is a view showing the VI characteristic curve by connecting the solar cells in series, Figure 1b is a VI characteristic curve by connecting the solar cells in parallel Figure is a diagram.
도 2는, 종래의 태양전지 모듈을 도시한 도면으로서, 도 2a는 종래의 태양전지 모듈을 도시한 구성도이고, 도 2b는 결합단면도이다.2 is a view showing a conventional solar cell module, Figure 2a is a block diagram showing a conventional solar cell module, Figure 2b is a coupling cross-sectional view.
도 3은, 본 발명에 따른 태양전지를 도시한 구성도이다.3 is a block diagram showing a solar cell according to the present invention.
도 4는, 본 발명에 따른 태양전지에 사용되는 기판을 도시한 도면으로서, 도 4a는 단결정 실리콘 기판의 종류를 도시한 도면이고, 도 4b는, 다결정 실리콘 기판의 종류를 도시한 도면이다.FIG. 4 is a diagram showing a substrate used in the solar cell according to the present invention, FIG. 4A is a diagram showing the type of a single crystal silicon substrate, and FIG. 4B is a diagram showing the type of a polycrystalline silicon substrate.
도 5는, 본 발명에 따른 태양전지의 전극부위를 평면으로 도시한 도면으로서, 도 5a는 출력전압 3V급의 전극구조를 도시한 평면도이고, 도 5b는 출력전압 12V급의 전극구조를 도시한 평면도이다.5 is a plan view showing the electrode portion of the solar cell according to the present invention in a plan view, Figure 5a is a plan view showing an electrode structure of the output voltage 3V class, Figure 5b is a electrode structure of the output voltage 12V class Top view.
도 6은, 본 발명에 따른 태양전지의 제조방법을 도시한 블록도이다.6 is a block diagram showing a method for manufacturing a solar cell according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 태양전지 20 : 연결탭10: solar cell 20: connection tab
30 : 열경화성 수지 40 : 모듈뒷판30: thermosetting resin 40: module back plate
50 : 강화유리50: tempered glass
100 : 태양전지 100' : 단위 태양전지100: solar cell 100 ': unit solar cell
110 : 전면반사방지막층 120 : p-형 실리콘기판110: front antireflection film layer 120: p-type silicon substrate
130 : 후면절연박막층 140 : p++형 후면전계층130: back insulation thin film layer 140: p ++ type back field layer
150 : n++형 에미터층 160 : 절연박막150: n ++ type emitter layer 160: insulating thin film
170 : 베이스전극 180 : 에미터전극170: base electrode 180: emitter electrode
190a,190b : 출력전극 200 : 밀봉층190a, 190b: output electrode 200: sealing layer
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