KR20050039273A - 모듈일체형 태양전지 및 그 제조방법 - Google Patents
모듈일체형 태양전지 및 그 제조방법 Download PDFInfo
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- KR20050039273A KR20050039273A KR1020030074703A KR20030074703A KR20050039273A KR 20050039273 A KR20050039273 A KR 20050039273A KR 1020030074703 A KR1020030074703 A KR 1020030074703A KR 20030074703 A KR20030074703 A KR 20030074703A KR 20050039273 A KR20050039273 A KR 20050039273A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
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- 229960004592 isopropanol Drugs 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
Abstract
Description
모듈출력 와트 | 전지(W) | 웨이퍼직경(inch) | 면적(㎠) | 단위 태양전지 수(개) | 단위 태양전지 면적(㎠) | 출력전류(A) |
1W | 1W | 4 | 70 | 4 | 19 | 0.57 |
1.5W | 1.5W | 5 | 120 | 4 | 30 | 0.9 |
8 | 15 | 0.45 | ||||
2.5W | 2.5W | 6 | 170 | 4 | 42.5 | 1.275 |
8 | 21.25 | 0.6375 | ||||
12 | 14.16 | 0.4248 | ||||
4.5W | 4.5W | 8 | 310 | 4 | 77.5 | 2.325 |
8 | 38.7 | 1.161 | ||||
12 | 25.8 | 0.774 | ||||
16 | 19.4 | 0.582 | ||||
10W | 10W | 12 | 700 | 4 | 175 | 5.25 |
8 | 87.5 | 2.625 | ||||
12 | 58.3 | 1.749 | ||||
16 | 43.7 | 1.311 | ||||
24 | 29.1 | 0.873 | ||||
36 | 19.4 | 0.582 |
모듈출력 와트 | 전지(W) | 웨이퍼직경(㎜*㎜) | 면적(㎠) | 단위 태양전지 수(개) | 단위 태양전지 면적(㎠) | 출력전류(A) |
1.4W | 1.4W | 100*100 | 100 | 4 | 25 | 0.75 |
2.1W | 2.1W | 125*125 | 156 | 4 | 39 | 1.17 |
8 | 19.5 | 0.585 | ||||
3.2W | 3.2W | 150*150 | 225 | 4 | 56.25 | 1.6875 |
8 | 28.125 | 0.84375 | ||||
12 | 18.75 | 0.5625 | ||||
5.6W | 5.6W | 200*200 | 400 | 4 | 100 | 3 |
8 | 50 | 1.5 | ||||
12 | 33.3 | 0.999 | ||||
16 | 25 | 0.75 | ||||
8.75W | 8.75W | 250*250 | 625 | 4 | 156.25 | 4.6875 |
8 | 78.125 | 2.34375 | ||||
12 | 52.08 | 1.5624 | ||||
16 | 39.06 | 1.1718 | ||||
24 | 26.04 | 0.7812 | ||||
36 | 17.36 | 0.5208 |
Claims (9)
- 피라미드 표면구조를 갖는 p-형 실리콘기판(120)과;상기 p-형 실리콘기판(120)의 전,후면에 각각 산화된 전면반사방지막층(110) 및 후면절연박막층(130)과;상기 후면절연박막층(130)에 매설되어 형성된 집적화된 베이스전극(170) 및 에미터전극(180)과;상기 양 전극(170)(180)에 태양전지 에미터와 베이스에 오옴성 접촉을 위해 각각 도핑되어 형성된 고농도 p++형 후면전계층(140) 및 n++형 에미터층(150)과;하나의 빗살모양으로 공통된 베이스전극(170)과 다른 하나의 빗살모양으로 공통된 에미터전극(180)으로 이루어진 단위 태양전지(100')를 서로 연결할 때 전기적으로 절연시키는 절연박막(160)과;일측의 베이스전극(170)과 일측의 에미터전극(180)에 각각 연결된 양극출력전극(190a) 및 음극출력전극(190b)과;상기 베이스전극(170)과 에미터전극(180)을 외부와 절연시키는 밀봉층(200);을 포함하여 구성된 것을 특징으로 하는 모듈일체형 태양전지.
- 제 1 항에 있어서,상기 베이스전극(170)은, 알루미늄(Al) 금속으로 이루어진 것을 특징으로 하는 모듈일체형 태양전지.
- 제 1 항에 있어서,상기 절연박막(160)은, 산화티타늄(TiO2) 또는 산화규소(SiO2) 중 어느 하나로 이루어진 것을 특징으로 하는 모듈일체형 태양전지.
- 제 3 항에 있어서,상기 에미터전극(180)과, 출력전극(190a)(190b), 절연박막(160)에는, 은(Ag)이 스크린 인쇄된 것을 특징으로 하는 모듈일체형 태양전지.
- p-형 실리콘기판(120)을 가열 세척하여 그 표면구조를 피라미드형으로 형성하는 단계와;상기 p-형 실리콘기판(120)에 고온 열처리하여 전,후면에 각각 산화된 전면반사방지막층(110)과 후면절연박막층(130)을 형성하는 단계와;상기 후면절연박막층(130)에 베이스전극(170)을 스크린 인쇄하여 건조시키는 단계와;상기 후면절연박막층(130)에 n++형 에미터층(150)을 스크린 인쇄하여 건조시키는 단계와;상기 n++형 에미터층(150)에 형성된 하나의 빗살모양으로 공통된 에미터전극(180)과 다른 하나의 빗살모양으로 공통된 베이스전극(170)으로 이루어진 단위 태양전지(100')간의 연결부에 절연박막(160)을 스크린 인쇄하여 건조시키는 단계와;상기 p-형 실리콘기판(120)을 고온 열처리하여 베이스전극(170)상에 p++형 후면전계층(140)을 형성하는 단계와;상기 일측의 베이스전극(170)과 에미터전극(180)에 각각 연결되어 모듈출력에 사용되는 출력전극(190a)(190b)과, 에미터전극(180), 절연박막(160)상에 연결용 전극으로 은(Ag)을 스크린 인쇄하여 건조시키고 소성시키는 단계와;상기 p-형 실리콘기판(120)의 후면에 밀봉을 위한 잉크를 스크린 인쇄하여 건조시키는 단계;를 포함하여 구성된 것을 특징으로 하는 모듈일체형 태양전지의 제조방법.
- 제 5 항에 있어서,상기 p-형 실리콘기판(120)은, 수산화나트륨(NaOH)과 이소-프로필 알코올(IPA : Iso-Propyl Alcohol)과 물(H2O)의 혼합용액속에서 가열 및 세척된 것을 특징으로 하는 모듈일체형 태양전지의 제조방법.
- 제 6 항에 있어서,상기 후면절연박막층(130)에 베이스전극(170)과 에미터전극(180)을 형성하기 위한 홈을 25 마이크로미터의 깊이와, 100 마이크로미터의 폭으로 형성한 것을 특징으로 하는 모듈일체형 태양전지의 제조방법.
- 제 5 항에 있어서,상기 베이스전극(170)은, 스크린 인쇄된 알루미늄(Al) 금속으로 이루어지고, 상기 절연박막(160)은, 산화티타늄(TiO2) 또는 산화규소(SiO2) 중 어느 하나로 이루어진 것을 특징으로 하는 모듈일체형 태양전지의 제조방법.
- 제 5 항에 있어서,상기 태양전지(100)의 베이스전극(170)과 에미터전극(180)의 노출로 인한 누전을 방지함과 아울러 기계적인 파손을 방지하는 후면 밀봉층(200)을 스크린 인쇄 가능한 잉크를 사용하여 40 마이크로미터 이상의 두께로 스크린 인쇄하고, 200도의 벨트 퍼니스에서 건조한 것을 특징으로 하는 모듈일체형 태양전지의 제조방법.
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KR101141219B1 (ko) * | 2010-05-11 | 2012-05-04 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US8525018B2 (en) | 2009-09-07 | 2013-09-03 | Lg Electronics Inc. | Solar cell |
KR101482130B1 (ko) * | 2008-11-21 | 2015-01-15 | 엘지전자 주식회사 | 후면전극 태양전지의 제조방법 및 이를 이용한 후면전극 태양전지 |
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US9905599B2 (en) | 2012-03-22 | 2018-02-27 | Sionyx, Llc | Pixel isolation elements, devices and associated methods |
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2003
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