KR20050001937A - 액정표시패널 및 그 제조 방법 - Google Patents
액정표시패널 및 그 제조 방법 Download PDFInfo
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- KR20050001937A KR20050001937A KR1020030042943A KR20030042943A KR20050001937A KR 20050001937 A KR20050001937 A KR 20050001937A KR 1020030042943 A KR1020030042943 A KR 1020030042943A KR 20030042943 A KR20030042943 A KR 20030042943A KR 20050001937 A KR20050001937 A KR 20050001937A
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- amorphous silicon
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- 238000000034 method Methods 0.000 title claims abstract description 102
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 62
- 229920005591 polysilicon Polymers 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 53
- 230000006698 induction Effects 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 12
- 230000003213 activating effect Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 20
- 230000008025 crystallization Effects 0.000 abstract description 19
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 95
- 239000010410 layer Substances 0.000 description 90
- 230000008569 process Effects 0.000 description 84
- 150000002500 ions Chemical class 0.000 description 31
- 239000010409 thin film Substances 0.000 description 27
- 238000000206 photolithography Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 8
- 210000002858 crystal cell Anatomy 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (11)
- 기판 상에 게이트전극을 형성하는 단계와,상기 게이트전극이 형성된 기판 상에 게이트절연막을 형성하는 단계와,상기 게이트절연막 상에 아몰퍼스 실리콘막을 증착하고 상기 아몰퍼스 실리콘막 상에 상기 게이트전극을 이용하여 절연패턴을 형성하는 단계와,상기 아몰퍼스 실리콘막을 유도금속과 상기 절연패턴을 이용하여 폴리실리콘막으로 결정화하고 상기 폴리 실리콘막의 소스영역, 드레인영역 및 채널영역을 형성하는 단계와,상기 소스 및 드레인영역과 각각 접촉되는 소스 및 드레인전극, 상기 소스 및 드레인전극을 따라 그 하부에 위치하는 액티브패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 제 1 항에 있어서,상기 아몰퍼스 실리콘막을 유도금속과 상기 절연패턴을 이용하여 폴리실리콘막으로 결정화하고 상기 폴리 실리콘막의 소스영역, 드레인영역 및 채널영역을 형성하는 단계는상기 절연패턴과 아몰퍼스 실리콘막 상에 상기 유도금속을 형성하는 단계와,상기 유도금속이 형성된 아몰퍼스 실리콘막에 불순물을 주입하는 단계와,상기 불순물이 주입된 아몰퍼스 실리콘막에 전계를 가한 상태에서 상기 아몰퍼스 실리콘막을 열처리하여 결정화된 폴리 실리콘막의 소스영역, 드레인영역 및 채널영역을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 제 1 항에 있어서,상기 아몰퍼스 실리콘막을 유도금속과 상기 절연패턴을 이용하여 폴리실리콘막으로 결정화하고 상기 폴리 실리콘막의 소스영역, 드레인영역 및 채널영역을 형성하는 단계는상기 아몰퍼스 실리콘막 상에 상기 유도금속을 형성하는 단계와,상기 유도금속이 형성된 아몰퍼스 실리콘막에 상기 절연패턴을 마스크로 불순물을 주입하는 단계와,상기 불순물이 주입된 아몰퍼스 실리콘막에 전계를 가한 상태에서 상기 아몰퍼스 실리콘막을 열처리하여 결정화된 폴리 실리콘막의 소스영역, 드레인영역 및 채널영역을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 제 1 항에 있어서,상기 유도금속은 Ni를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 제 2 항 또는 제 3 항에 있어서,상기 불순물이 주입된 아몰퍼스 실리콘막에 전계를 가한 상태에서 상기 아몰퍼스 실리콘막을 열처리하여 결정화된 폴리 실리콘막의 소스영역, 드레인영역 및 채널영역을 형성하는 단계는상기 아몰퍼스 실리콘막에 주입된 상기 불순물을 활성화시키는 단계를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 제 1 항에 있어서,상기 게이트절연막 상에 아몰퍼스 실리콘막을 증착하고 상기 아몰퍼스 실리콘막 상에 상기 게이트전극을 이용하여 절연패턴을 형성하는 단계는상기 아몰퍼스 실리콘막 상에 절연물질 및 포토레지스트를 순차적으로 형성하는 단계와,상기 기판 배면에서 상기 포토레지스트쪽으로 광을 조사하여 포토레지스트를 배면노광하는 단계와,상기 배면노광된 포토레지스트를 현상하여 포토레지스트패턴을 형성하는 단계와,상기 포토레지스트패턴을 마스크로 상기 절연물질을 식각하는 단계를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 제 1 항에 있어서,상기 소스 및 드레인영역과 각각 접촉되는 소스 및 드레인전극, 상기 소스 및 드레인전극을 따라 그 하부에 위치하는 액티브패턴을 형성하는 단계는상기 채널영역, 소스영역 및 드레인영역을 포함하는 폴리실리콘막이 형성된 기판 상에 데이터금속층 및 포토레지스트를 순차적으로 형성하는 단계와,상기 포토레지스트를 부분 노광한 후 현상하여 단차진 포토레지스트패턴을 형성하는 단계와,상기 단차진 포토레지스트패턴을 이용하여 상기 데이터금속층과 상기 폴리실리콘막을 식각하는 단계와,상기 단차진 포토레지스트패턴을 애싱하는 단계와,상기 애싱된 포토레지스트패턴을 이용하여 상기 데이터금속층을 식각함으로써 상기 액티브패턴의 채널영역과 중첩되는 절연패턴을 노출시키는 단계를 포함하는 것을 특징으로 하는 액정표시패널의 제조방법.
- 기판 상에 형성되는 게이트전극과,상기 게이트전극과 절연되게 중첩되는 채널영역, 채널영역을 사이에 두고 양측에 위치하는 소스영역 및 드레인영역을 포함하는 액티브패턴과,상기 액티브패턴 상에 상기 액티브패턴의 채널영역과 중첩되게 형성되는 절연패턴과,상기 액티브패턴의 소스영역과 접촉하는 소스전극과,상기 액티브패턴의 드레인영역과 접촉하는 드레인전극을 구비하는 것을 특징으로 하는 액정표시패널.
- 제 8 항에 있어서,상기 액티브층은 아몰퍼스 실리콘막이 전계를 가한 상태에서 유도금속을 이용하여 결정화된 폴리실리콘인 것을 특징으로 하는 액정표시패널.
- 제 9 항에 있어서,상기 유도금속은 Ni를 포함하는 것을 특징으로 하는 액정표시패널.
- 제 8 항에 있어서,상기 액티브패턴은 상기 소스 및 드레인전극 하부에 그들을 따라 형성되는 것을 특징으로 하는 액정표시패널.
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US10/875,564 US7130002B2 (en) | 2003-06-28 | 2004-06-25 | LCD with metal diffused into the insulating layer over the channel area |
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KR100889626B1 (ko) * | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) * | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
KR100965778B1 (ko) * | 2008-01-16 | 2010-06-24 | 서울대학교산학협력단 | 고효율 다결정 실리콘 태양전지 및 그 제조방법 |
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US20040263707A1 (en) | 2004-12-30 |
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