KR20040099735A - 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자 - Google Patents
비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자 Download PDFInfo
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- KR20040099735A KR20040099735A KR1020030031810A KR20030031810A KR20040099735A KR 20040099735 A KR20040099735 A KR 20040099735A KR 1020030031810 A KR1020030031810 A KR 1020030031810A KR 20030031810 A KR20030031810 A KR 20030031810A KR 20040099735 A KR20040099735 A KR 20040099735A
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- 238000000034 method Methods 0.000 title claims abstract description 156
- 238000002425 crystallisation Methods 0.000 title claims abstract description 79
- 230000008025 crystallization Effects 0.000 title claims abstract description 74
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 239000002210 silicon-based material Substances 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 78
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000206 photolithography Methods 0.000 claims description 19
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims description 14
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000007598 dipping method Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 235000018734 Sambucus australis Nutrition 0.000 claims description 9
- 244000180577 Sambucus australis Species 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 208000032005 Spinocerebellar ataxia with axonal neuropathy type 2 Diseases 0.000 description 1
- 208000033361 autosomal recessive with axonal neuropathy 2 spinocerebellar ataxia Diseases 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
Description
Claims (29)
- 비정질 실리콘 물질과 결정질 실리콘 물질 간에 식각선택비를 가지는 세코 에천트(secco etchant)가 담긴 용기(vessel)를 구비하는 단계와;기판 상에 비정질 실리콘층을 형성하는 단계와;상기 비정질 실리콘층의 모서리부의 일부를 결정화하여 얼라인 키를 형성하는 단계와;상기 얼라인 키를 포함한 기판의 일측부를 용기 내 세코 에천트에 디핑(dipping)하여, 상기 얼라인 키 주변의 비정질 실리콘 물질을 식각처리하는 단계를 포함하는 비정질 실리콘의 결정화 공정용 기판의 얼라인 키 식각 방법.
- 제 1 항에 있어서,상기 얼라인 키는 기판의 네 모서리부에 각각 형성되어 있는 비정질 실리콘의 결정화 공정용 기판의 얼라인 키 식각 방법.
- 제 1 항에 있어서,상기 세코 에천트는 불산(HF) 대 중크롬산칼륨(K2Cr207)이 2 : 1 비율로 혼합된 용액인 비정질 실리콘의 결정화 공정용 기판의 얼라인 키 식각 방법.
- 제 3 항에 있어서,상기 혼합 용액의 농도는 0.15 M(mol/ℓ)인 비정질 실리콘의 결정화 공정용 기판의 얼라인 키 식각 방법.
- 제 1 항에 있어서,상기 식각처리하는 단계 다음에, 상기 기판 표면을 불산(HF)으로 세정하는 단계를 포함하는 비정질 실리콘의 결정화 공정용 기판의 얼라인 키 식각 방법.
- 제 1 항에 있어서,상기 식각처리하는 단계 다음에, 상기 기판 표면을 불산(HF)으로 세정하는 단계를 포함하는 비정질 실리콘의 결정화 공정용 기판의 얼라인 키 식각 방법.
- 얼라인 키 생성용 마스크와, 픽셀 어레이용 마스크를 포함하여 결정화 공정용 마스크를 제작하는 단계와;상기 얼라인 키 생성용 마스크를 이용하여, 비정질 실리콘층이 형성된 기판의 모서리부에 얼라인 키를 형성하는 단계와;상기 얼라인 키를 포함한 기판의 외측부를 식각처리하여, 양각 형태의 얼라인 키를 형성하는 단계와;상기 양각 형태로 기판면과 단차를 가지는 얼라인 키를 기준으로, 상기 픽셀 어레이용 마스크를 얼라인하여 상기 기판의 픽셀 어레이부를 결정화시키는 단계를 포함하는 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 결정화 공정용 마스크를 제작하는 단계에서는, 구동회로부용 마스크의 제작 단계를 추가로 포함하는 비정질 실리콘의 결정화 공정.
- 제 6 항에 있어서,상기 구동회로부용 마스크는, 상기 양각형태의 얼라인 키를 기준으로 얼라인되고, 다수 개의 슬릿이 서로 이격되게 위치하는 패턴 구조로 이루어지는 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 얼라인 키 생성용 마스크는 얼라인 키 패턴을 가지며, 상기 얼라인 키 패턴은 서로 이격되게 배치된 다수 개의 사각 패턴이 전체적으로 "ㄱ"자형을 이루는 패턴 구조를 가지는 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 얼라인 키를 형성하는 단계는, 상기 얼라인 키 패턴과 대응된 기판 영역을 선택적으로 결정화시키는 단계인 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 얼라인 키는 폴리 실리콘 물질로 이루어지는 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 얼라인 키를 양각 형태로 형성하는 단계에서는, 비정질 실리콘 물질과 결정질 실리콘 물질 간에 식각선택비를 가지는 세코 에천트를 이용한디핑(dipping) 공정이 이용되는 비정질 실리콘의 결정화 공정.
- 제 13 항에 있어서,상기 세코 에천트는 불산(HF) 대 중크롬산칼륨(K2Cr207)이 2 : 1 비율로 혼합된 용액인 비정질 실리콘의 결정화 공정.
- 제 14 항에 있어서,상기 혼합용액의 농도는 0.15 M(mol/ℓ)인 비정질 실리콘의 결정화 공정.
- 제 13 항에 있어서,상기 세코 에천트를 이용한 디핑 공정 다음에는, 불산을 이용한 세정 공정이 추가로 포함되는 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 얼라인 키는 기판의 네 모서리부에 각각 형성하는 비정질 실리콘의 결정화 공정.
- 제 7 항에 있어서,상기 픽셀 어레이용 마스크는, 레이저 빔을 차단하는 제 1 영역과, 레이저 빔을 투과시키며, 서로 일정간격 이격되게 다수 개 배치된 제 2 영역으로 이루어지는 비정질 실리콘의 결정화 공정.
- 제 17 항에 있어서,상기 제 2 영역은 다수 개의 슬릿이 일방향으로 서로 이격되게 배치된 패턴 구조를 포함하는 영역인 비정질 실리콘의 결정화 공정.
- 제 18 항에 있어서,상기 제 2 영역은, 제 1, 2 블럭으로 나뉘어, 상기 제 1 블럭의 제 1 슬릿과 제 2 블럭의 제 2 슬릿이 서로 엇갈리게 다수 개 배치된 패턴 구조를 포함하는 영역인 비정질 실리콘의 결정화 공정.
- 제 18 항에 있어서,상기 제 2 영역은, 상기 기판의 스위칭 소자 영역과 대응되게 배치된 영역인 비정질 실리콘의 결정화 공정.
- 제 7 항 또는 제 8 항 중 어느 하나의 항에 있어서,상기 결정화 단계 다음에는, 상기 결정화처리된 실리콘층을 감광성 물질인 PR(photo resist)을 이용하여 노광(exposure), 현상(development), 식각(etching)하는 사진식각(photolithography) 공정을 통해 패터닝하는 공정이 포함되는 비정질 실리콘의 결정화 공정.
- 제 22 항에 있어서,상기 노광 단계에서는, 상기 PR의 일부 영역 만을 선택적으로 노광시키기 위한 마스크가 포함되고, 상기 마스크는 상기 양각 형태의 얼라인 키를 기준으로 얼라인 되는 비정질 실리콘의 결정화 공정.
- 제 22 항에 있어서,상기 패터닝 공정을 통해, 상기 결정화처리된 실리콘층은 반도체층을 이루는비정질 실리콘의 결정화 공정.
- 제 7 항에 따른 비정질 실리콘의 결정화 공정에 의해 형성되며, 활성 영역과, 상기 활성 영역의 양 주변부를 이루는 소스 영역 및 드레인 영역으로 이루어진 반도체층과;상기 반도체층 상부의 활성 영역에 차례대로 형성된 게이트 절연막 및 게이트 전극과;상기 게이트 전극을 덮는 기판 전면에 위치하며, 상기 소스 영역과 드레인 영역을 일부 노출시키는 제 1, 2 콘택홀을 가지는 층간 절연막과;상기 층간 절연막 상부에서, 상기 제 1, 2 콘택홀을 통해 반도체층의 소스 영역 및 드레인 영역과 연결되는 소스 전극 및 드레인 전극을 포함하는 스위칭 소자.
- 제 25 항에 있어서,상기 반도체층과 기판 사이에는, 버퍼층이 추가로 포함되는 스위칭 소자.
- 제 25 항에 있어서,상기 소스 전극 및 드레인 전극을 덮는 영역에는 보호층이 추가로 포함되는 스위칭 소자.
- 제 25 항에 있어서,상기 반도체층의 소스 영역 및 드레인 영역은 n형(negative type) 또는 p형(positive type) 이온으로 도핑(doping)처리된 영역인 스위칭 소자.
- 제 25 항에 있어서,상기 반도체층, 게이트 전극, 소스 전극 및 드레인 전극은 실질적으로 박막트랜지스터(Thin Film Transistor)를 이루는 스위칭 소자.
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KR10-2003-0031810A KR100519948B1 (ko) | 2003-05-20 | 2003-05-20 | 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자 |
GB0525651A GB2421851B (en) | 2003-05-20 | 2004-05-14 | Method of fabricating a display device structure |
GB0525649A GB2421850B (en) | 2003-05-20 | 2004-05-14 | Method of fabricating a switching device |
GB0525655A GB2421634B (en) | 2003-05-20 | 2004-05-14 | Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon |
GB0410865A GB2403065B (en) | 2003-05-20 | 2004-05-14 | Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon |
JP2004148023A JP4336246B2 (ja) | 2003-05-20 | 2004-05-18 | 多結晶シリコンの製造方法 |
US10/848,048 US7180198B2 (en) | 2003-05-20 | 2004-05-19 | Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon |
DE102004024924A DE102004024924B4 (de) | 2003-05-20 | 2004-05-19 | Verfahren zum Herstellen polykristallinen Siliciums, Verfahren zum Herstellen einer Ausrichtungsmarkierung, sowie Verfahren zum Herstellen eines Schaltelements |
DE102004064099.8A DE102004064099B4 (de) | 2003-05-20 | 2004-05-19 | Schaltbauteil und Displaystruktur unter Verwendung polykristallinen Siliciums |
CNB2004100423356A CN1327484C (zh) | 2003-05-20 | 2004-05-20 | 多晶硅的制作方法和使用多晶硅的开关器件 |
US11/353,206 US7326598B2 (en) | 2003-05-20 | 2006-02-14 | Method of fabricating polycrystalline silicon |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100719682B1 (ko) * | 2005-04-06 | 2007-05-17 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR101289066B1 (ko) * | 2006-06-30 | 2013-07-22 | 엘지디스플레이 주식회사 | 결정화방법 및 결정화 마스크 제작방법 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
JP2004265897A (ja) * | 2003-01-20 | 2004-09-24 | Sharp Corp | 結晶化半導体素子およびその製造方法ならびに結晶化装置 |
KR100519948B1 (ko) * | 2003-05-20 | 2005-10-10 | 엘지.필립스 엘시디 주식회사 | 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자 |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
KR100531416B1 (ko) * | 2003-09-17 | 2005-11-29 | 엘지.필립스 엘시디 주식회사 | Sls 장비 및 이를 이용한 실리콘 결정화 방법 |
KR101026935B1 (ko) * | 2003-12-10 | 2011-04-04 | 엘지디스플레이 주식회사 | 디스펜서 정렬장치 및 그 방법 |
US8901268B2 (en) * | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
US20090218577A1 (en) * | 2005-08-16 | 2009-09-03 | Im James S | High throughput crystallization of thin films |
US7232969B1 (en) * | 2006-04-06 | 2007-06-19 | Speed Tech Corp. | Keypad |
KR101255508B1 (ko) * | 2006-06-30 | 2013-04-16 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 및 이의 얼라인 키의 제조 방법 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
EP2387081B1 (en) * | 2010-05-11 | 2015-09-30 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and method for fabricating the same |
KR101698511B1 (ko) * | 2010-07-27 | 2017-01-23 | 삼성디스플레이 주식회사 | 표시 장치 제조 방법 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
CN103904125A (zh) * | 2012-12-26 | 2014-07-02 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管 |
CN103952768A (zh) * | 2014-05-09 | 2014-07-30 | 中国科学院宁波材料技术与工程研究所 | 一种单晶硅倒金字塔阵列结构绒面及其制备方法和应用 |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
KR102636736B1 (ko) * | 2016-09-08 | 2024-02-15 | 삼성디스플레이 주식회사 | 표시 장치 |
JP2019061130A (ja) * | 2017-09-27 | 2019-04-18 | 株式会社ジャパンディスプレイ | 表示装置および表示装置の製造方法 |
JP2021192396A (ja) * | 2018-09-14 | 2021-12-16 | キオクシア株式会社 | 集積回路装置及び集積回路装置の製造方法 |
CN112885924A (zh) * | 2021-02-05 | 2021-06-01 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY109592A (en) * | 1992-11-16 | 1997-03-31 | Tokyo Electron Ltd | Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals. |
TW272319B (ko) * | 1993-12-20 | 1996-03-11 | Sharp Kk | |
TW279275B (ko) * | 1993-12-27 | 1996-06-21 | Sharp Kk | |
JPH07335906A (ja) * | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体装置およびその作製方法 |
CA2256699C (en) | 1996-05-28 | 2003-02-25 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
JP4192423B2 (ja) * | 1997-11-20 | 2008-12-10 | 株式会社ニコン | マーク検出方法、位置検出装置、露光方法及び装置、デバイス製造方法、並びにデバイス |
JP3169068B2 (ja) * | 1997-12-04 | 2001-05-21 | 日本電気株式会社 | 電子線露光方法及び半導体ウエハ |
KR100288772B1 (ko) * | 1998-11-12 | 2001-05-02 | 윤종용 | 액정 표시 장치 및 그 제조 방법 |
JP4232997B2 (ja) * | 1999-03-31 | 2009-03-04 | 本田技研工業株式会社 | 自動二輪車の操舵装置 |
JP2000349290A (ja) * | 1999-06-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2001083521A (ja) * | 1999-09-16 | 2001-03-30 | Toshiba Corp | 液晶表示装置 |
JP2001148480A (ja) * | 1999-11-18 | 2001-05-29 | Nec Corp | 薄膜トランジスタ、薄膜トランジスタの製造装置、および薄膜トランジスタその製造方法 |
EP1122561A1 (en) * | 2000-02-03 | 2001-08-08 | Corning Incorporated | High precision alignment of optical devices over a high thickness transparent layer |
US6368945B1 (en) * | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
US6833883B2 (en) * | 2001-02-13 | 2004-12-21 | Lg. Philips Lcd Co., Ltd. | Array substrate for reflective and transflective liquid crystal display devices and manufacturing method for the same |
KR100808466B1 (ko) * | 2001-07-30 | 2008-03-03 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치용 어레이 기판 및 그의 제조 방법 |
GB2379412A (en) * | 2001-09-10 | 2003-03-12 | Seiko Epson Corp | Deposition of soluble materials |
JP3903761B2 (ja) * | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
JP4030758B2 (ja) * | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6727125B2 (en) * | 2002-04-17 | 2004-04-27 | Sharp Laboratories Of America, Inc. | Multi-pattern shadow mask system and method for laser annealing |
JP2004055771A (ja) * | 2002-07-18 | 2004-02-19 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法及びレーザ照射装置 |
US7433303B2 (en) * | 2002-08-02 | 2008-10-07 | Null Networks Llc | Preemptive network traffic control for regional and wide area networks |
TWI227913B (en) * | 2003-05-02 | 2005-02-11 | Au Optronics Corp | Method of fabricating polysilicon film by excimer laser crystallization process |
KR100519948B1 (ko) * | 2003-05-20 | 2005-10-10 | 엘지.필립스 엘시디 주식회사 | 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100719682B1 (ko) * | 2005-04-06 | 2007-05-17 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR101289066B1 (ko) * | 2006-06-30 | 2013-07-22 | 엘지디스플레이 주식회사 | 결정화방법 및 결정화 마스크 제작방법 |
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US7180198B2 (en) | 2007-02-20 |
GB2421634A (en) | 2006-06-28 |
JP4336246B2 (ja) | 2009-09-30 |
GB2421851A (en) | 2006-07-05 |
US20040235279A1 (en) | 2004-11-25 |
GB2403065A (en) | 2004-12-22 |
GB0525649D0 (en) | 2006-01-25 |
CN1327484C (zh) | 2007-07-18 |
KR100519948B1 (ko) | 2005-10-10 |
GB0525651D0 (en) | 2006-01-25 |
GB2421850A (en) | 2006-07-05 |
GB2421851B (en) | 2006-12-13 |
JP2004349699A (ja) | 2004-12-09 |
US20060125120A1 (en) | 2006-06-15 |
GB2403065B (en) | 2006-07-12 |
GB0525655D0 (en) | 2006-01-25 |
GB2421634B (en) | 2006-12-27 |
DE102004024924B4 (de) | 2007-12-13 |
CN1574225A (zh) | 2005-02-02 |
GB0410865D0 (en) | 2004-06-16 |
US7326598B2 (en) | 2008-02-05 |
GB2421850B (en) | 2006-10-25 |
DE102004024924A1 (de) | 2005-03-03 |
DE102004064099B4 (de) | 2016-01-07 |
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