KR20040081252A - 고 텐팅성 감광성 수지조성물 - Google Patents
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- KR20040081252A KR20040081252A KR1020030015992A KR20030015992A KR20040081252A KR 20040081252 A KR20040081252 A KR 20040081252A KR 1020030015992 A KR1020030015992 A KR 1020030015992A KR 20030015992 A KR20030015992 A KR 20030015992A KR 20040081252 A KR20040081252 A KR 20040081252A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
조 성 | 중량% | 비고 | |
고분자결합제 | YN-7216 | 50 | 50wt%in MEK |
광개시제 | 벤조페논4,4'-(비스디에틸마미노)벤조페논루코 크리스탈 바이올렛톨루엔술폰산1수화물다이아몬드 그린 GH | 2.01.01.00.50.5 | |
광중합성단량체 | 9G(Polyethylene Glycol Dimethacrylate)APG-400(Poly propylene glycol 400 Diacrylate)화학식 1로 표시되는 광중합 모노머(R=H 또는 CH3이고, m은 16~18, n은 6~8, l은 6~8) | 10.010.010.0 | |
플라스티사이져 | 트리페닐포스페이트 (준세이) | 1.0 | |
용매 | 메틸에틸케톤 | 14.0 |
조 성 | 중량% | 비고 | |
고분자결합제 | YN-7216 | 50 | 50wt%in MEK |
광개시제 | 벤조페논4,4'-(비스디에틸마미노)벤조페논루코 크리스탈 바이올렛톨루엔술폰산1수화물다이아몬드 그린 GH | 2.01.01.00.50.5 | |
광중합성단량체 | 9G(Polyethylene Glycol Dimethacrylate)APG-400(Poly propylene glycol 400 Diacrylate)화학식 1로 표시되는 광중합 모노머(R=H 또는 CH3이고, m은 16~18, n은 6~8, l은 6~8) | 7.57.515.0 | |
플라스티사이져 | 트리페닐포스페이트 (준세이) | 1.0 | |
용매 | 메틸에틸케톤 | 14.0 |
조성 | 중량% | 비고 | |
고분자결합제 | YN-7216 | 50 | 50wt%in MEK |
광개시제 | 벤조페논4,4'-(비스디에틸마미노)벤조페논루코 크리스탈 바이올렛톨루엔술폰산1수화물다이아몬드 그린 GH | 2.01.01.00.50.5 | |
광중합성단량체 | 9G(Polyethylene Glycol Dimethacrylate)APG-400(Poly propylene glycol 400 Diacrylate)BPE-1300(2,2-Bis[4-(Methacryloxy Polyethoxy)Phenyl]Propane | 10.010.010.0 | |
플라스티사이져 | 트리페닐포스페이트 (준세이) | 1.0 | |
용매 | 메틸에틸케톤 | 14.0 |
노광량*1 | 실시예 1 | 실시예 2 | 비교예 1 | |
감도*2 | 70 | 8/21 | 8.3/21 | 8/21 |
100 | 9/21 | 9.5/21 | 9/21 | |
150 | 10/21 | 10.7/21 | 10/21 | |
해상도*3(㎛) | 70 | 33 | 31 | 37 |
100 | 37 | 35 | 42 | |
150 | 42 | 39 | 46 | |
세선밀찰력(㎛) | 70 | 39 | 37 | 45 |
100 | 35 | 34 | 41 | |
150 | 31 | 30 | 35 | |
텐팅성강도/신도(kg/mm) | 70 | 0.85/2.75 | 0.91/2.89 | 0.70/2.35 |
100 | 0.96/2.97 | 1.10/3.09 | 0.86/2.70 | |
150 | 1.15/3.12 | 1.25/3.35 | 0.97/3.00 | |
*1artwork 밑에서의 노광량, 즉 드라이 필름 포토레지스트가 받는 노광량(mJ/㎠)*2감도는 Stouffer 21 step tablet으로 측정한 것이다.*3해상도는 회로라인과 회로라인 사이의 공간을 1:1로 하여 측정한 것이다.*4드라이 필름 포토포토레지스트의 라미네이션 조건: HAKUTO MACH 610i; 온도 115℃; 압력 4Kgf/㎠; 스피드 2.5m/min; Preheater 온도 80℃*5드라이 필름 포토포토레지스트의 노광조건: Perkin-ElmerTMOB7120(평행광 노광기)*6드라이 필름 포토포토레지스트의 현상조건: 현상액 Na2CO3농도 0.5중량%; 온도 30℃, 스프레이 압력 1.5Kgf/㎠, 파단점 65% |
Claims (2)
- 알카리 가용성 바인더 폴리머, 광중합성 모노머, 광중합 개시제, 및 첨가제를 포함하는 감광성 수지 조성물에 있어서,상기 광중합성 모노머로서 다음 화학식 1로 표시되는 분자말단이 (메타)아크릴레이트기이며 중간 사슬은 에틸렌옥사이드와 프로필렌옥사이드의 블록공중합체로서 사슬의 반복단위가 25∼35인 화합물을 포함하는 것임을 특징으로 하는 감광성 수지조성물.화학식 1상기 식에서 R은 H 또는 CH3이고,m은 16∼18의 정수,n은 6∼8의 정수,그리고l은 6∼8의 정수이다.
- 제 1 항에 있어서, 상기 화학식 1로 표시되는 분자말단이 (메타)아크릴레이트기이며 중간 사슬은 에틸렌옥사이드와 프로필렌옥사이드의 블록공중합체로서 사슬의 반복단위가 25∼35인 화합물은 전체 수지 조성 중 10∼15중량%로 포함되는 것임을 특징으로 하는 감광성 수지조성물.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100663192B1 (ko) * | 2005-01-27 | 2007-01-03 | 주식회사 코오롱 | 네가티브형 액상 포토레지스트의 조성물 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3281307B2 (ja) | 1997-12-24 | 2002-05-13 | 日立化成工業株式会社 | 感光性樹脂組成物、これを用いた感光性エレメント、感光性樹脂組成物の層の積層方法、感光性樹脂組成物層積層基板及び感光性樹脂組成物の層の硬化方法 |
KR100553245B1 (ko) * | 2001-07-18 | 2006-02-20 | 주식회사 코오롱 | 감광성 수지 조성물 |
KR100502259B1 (ko) * | 2001-07-30 | 2005-07-20 | 주식회사 코오롱 | 자외선 경화성 수지 조성물 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100663192B1 (ko) * | 2005-01-27 | 2007-01-03 | 주식회사 코오롱 | 네가티브형 액상 포토레지스트의 조성물 |
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