KR20040040902A - Method for selectively removing GaN substrate using laser - Google Patents
Method for selectively removing GaN substrate using laser Download PDFInfo
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- KR20040040902A KR20040040902A KR1020020069250A KR20020069250A KR20040040902A KR 20040040902 A KR20040040902 A KR 20040040902A KR 1020020069250 A KR1020020069250 A KR 1020020069250A KR 20020069250 A KR20020069250 A KR 20020069250A KR 20040040902 A KR20040040902 A KR 20040040902A
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- gallium nitride
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- 238000000034 method Methods 0.000 title claims abstract description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 40
- 229910002601 GaN Inorganic materials 0.000 claims description 38
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 1
- 101000661808 Mus musculus Suppressor of tumorigenicity 14 protein homolog Proteins 0.000 description 1
- 102100037942 Suppressor of tumorigenicity 14 protein Human genes 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 gallium nitride (GaN) series compound Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
본 발명은 레이저를 이용한 선택적 질화갈륨층을 제거하는 방법에 관한 것으로, 보다 상세하게는 제거할 영역의 질화갈륨층을 열분해시켜 제거함으로써, 공정을 단순화시키고 후 공정으로 성장되는 질화갈륨층에 오염확률을 줄일 수 있는 레이저를 이용한 선택적 질화갈륨층을 제거하는 방법에 관한 것이다.The present invention relates to a method of removing a selective gallium nitride layer using a laser, and more particularly, by pyrolyzing and removing a gallium nitride layer in a region to be removed, the process is simplified and the probability of contamination on the gallium nitride layer grown in a later process It relates to a method for removing a selective gallium nitride layer using a laser that can reduce the.
일반적으로 Ⅲ-Ⅴ족 질화물계 반도체를 이용한 청·녹색 광 소자 및 전자 소자의 개발 및 응용에 대한 관심이 급격히 고조되고 있다.In general, interest in the development and application of blue and green optical devices and electronic devices using III-V nitride semiconductors has been rapidly increasing.
그러한 이유중의 하나로 고 결함 밀도에도 불구하고, 소자 수명에는 문제가없는 것으로 보고하고 있다.One of the reasons is that despite the high defect density, there is no problem in device life.
일본의 Nichia 케미컬 사는 1만 시간 이상의 장 수명 청색 발광다이오드의 개발 성공과 더불어, 양산체제의 구축으로 전세계의 시장을 독점하려는 징후가 보이고 있으며, 여기에 대응하기 위하여 다양한 시도가 기업과 대학에서 이루어지고 있다.Japan's Nichia Chemical has succeeded in developing over 10,000 hours of long-life blue light-emitting diodes, and it has been showing signs of monopolizing the global market by establishing a mass production system. have.
특히, 질화갈륨(GaN)은 넓고 직접적인 에너지 밴드갭과 원자간의 큰 상호결합력 그리고 높은 열전도성으로 인해 광소자 및 고온, 고전력 소자로서 이상적인 특성을 갖고 있다.In particular, gallium nitride (GaN) has ideal characteristics as an optical device, a high temperature, and a high power device due to its wide and direct energy band gap, large mutual coupling force between atoms, and high thermal conductivity.
따라서, 최근, 고효율의 단파장 광소자 및 전력 전자소자에 대한 수요가 늘어남에 따라, 이러한 용도에 적합한 것으로 알려져 있는 질화갈륨(GaN) 계열의 화합물 반도체에 대한 연구가 많이 진행되고 있다.Therefore, in recent years, as the demand for high efficiency short wavelength optical devices and power electronic devices increases, many studies on gallium nitride (GaN) series compound semiconductors known to be suitable for such applications have been conducted.
이런 질화갈륨 계열의 화합물 반도체를 이용하여 제조되는 소자들은 질화갈륨 계열의 화합물 반도체의 단결정 박막 즉, 에피 박막층으로 구성된다.Devices manufactured using such a gallium nitride-based compound semiconductor are composed of a single crystal thin film, that is, an epi thin film layer of a gallium nitride-based compound semiconductor.
우수한 에피 박막을 얻기 위해서는 결함이 적은 동종의 단결정 물질 기판으로 제조가 되어야 한다.In order to obtain an excellent epitaxial thin film, it must be manufactured with a homogeneous single crystal substrate having few defects.
한편, 질화갈륨을 이용하여 소자를 제조하기 위하여, 질화갈륨을 선택적으로 제거하는 공정이 필요하는 경우도 발생한다.On the other hand, in order to manufacture a device using gallium nitride, there is a case where a process for selectively removing gallium nitride is required.
종래의 기술을 활용하여 질화갈륨을 선택적으로 제거하여 패턴을 형성하기 위해서는, 먼저, 질화갈륨층 상부에 실리콘 산화막을 형성한다.In order to form a pattern by selectively removing gallium nitride using a conventional technique, first, a silicon oxide film is formed on the gallium nitride layer.
그 후, 이 실리콘 산화막을 사진식각공정을 수행하여 패터닝한다.Thereafter, the silicon oxide film is patterned by performing a photolithography process.
그 다음, 패터닝된 실리콘 산화막을 마스크로 하여 질화갈륨층을 제거한다.Then, the gallium nitride layer is removed using the patterned silicon oxide film as a mask.
결국, 실리콘 산화막과 같은 절연막을 이용하여, 포토레지스터와 같은 감광막으로 사진식각공정을 수행하여 실리콘 산화막의 패턴을 형성하는 통상적인 기술에 의존할 수밖에 없다.As a result, using an insulating film such as a silicon oxide film, a photolithography process such as a photoresist is performed to rely on a conventional technique of forming a pattern of a silicon oxide film.
그러나, 상기의 실리콘 산화막은 기판이나 소자를 성장시키는데, 불필요한 요소이며, 결국 제거해야 하는 추가적인 공정이 필요하게 된다.However, the silicon oxide film is an unnecessary element for growing a substrate or an element, and thus requires an additional process to be removed.
또한, 질화갈륨층의 상부에 실리콘 산화막층을 형성하면, 후 공정에서 성장되는 질화갈륨층을 오염시키게 되는 단점이 있다.In addition, if the silicon oxide film layer is formed on the gallium nitride layer, there is a disadvantage that the contamination of the gallium nitride layer grown in a later step.
물론, 다른 방법으로 질화갈륨층을 선택적으로 제거할 수 있으나, 공정이 복잡하다.Of course, the gallium nitride layer may be selectively removed by other methods, but the process is complicated.
이에 본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로, 제거할 영역의 질화갈륨층을 열분해시켜 제거함으로써, 공정을 단순화시키고 후 공정으로 성장되는 질화갈륨층에 오염확률을 줄일 수 있는 레이저를 이용한 선택적 질화갈륨층을 제거하는 방법을 제공하는 데 그 목적이 있다.Accordingly, the present invention has been made to solve the problems described above, by pyrolyzing and removing the gallium nitride layer of the region to be removed, the laser can simplify the process and reduce the probability of contamination on the gallium nitride layer grown in a later process It is an object of the present invention to provide a method for removing a selective gallium nitride layer using a.
상기한 본 발명의 목적을 달성하기 위한 바람직한 양태(樣態)는, 질화갈륨층의 제거할 영역에 레이저를 조사하여 갈륨(Ga)과 질소(N2)로 열분해하는 단계와;A preferred aspect for achieving the above object of the present invention comprises the steps of: thermally decomposing gallium (Ga) and nitrogen (N 2 ) by irradiating a laser to a region to be removed of the gallium nitride layer;
상기 질화갈륨층에 열분해된 갈륨을 제거하는 단계로 이루어진 것을 특징으로 하는 레이저를 이용한 선택적 질화갈륨층을 제거하는 방법이 제공된다.There is provided a method of removing a selective gallium nitride layer using a laser, characterized in that for removing the gallium pyrolyzed to the gallium nitride layer.
도 1a 내지 1c는 본 발명에 따라 레이저를 이용하여 선택적으로 질화갈륨층을 제거하는 공정도이다.1A-1C are process diagrams for selectively removing a gallium nitride layer using a laser in accordance with the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 기판 11 : 질화갈륨층10 substrate 11 gallium nitride layer
11a : 질화갈륨 패턴11a gallium nitride pattern
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
도 1a 내지 1c는 본 발명에 따라 레이저를 이용하여 선택적으로 질화갈륨층을 제거하는 공정도로써, 먼저, 도 1a와 같이 기판(10)의 상부에 질화갈륨층(11)이 성장되어 있으면, 제거할 영역에 레이저를 조사한다.(도 1b)1A to 1C are process diagrams for selectively removing a gallium nitride layer using a laser according to the present invention. First, if the gallium nitride layer 11 is grown on the substrate 10 as shown in FIG. 1A, the gallium nitride layer 11 may be removed. The laser is irradiated to the area (Fig. 1B).
여기서, 레이저(Laser)가 조사된 질화갈륨층(11)의 영역은 갈륨(Ga)과 질소(N2)가 열분해가 되어, 질소(N2)는 기화된다.In the region of the gallium nitride layer 11 irradiated with a laser, gallium (Ga) and nitrogen (N 2 ) are thermally decomposed, and nitrogen (N 2 ) is vaporized.
마지막으로, 상기 질화갈륨층(11)에서 열분해된 갈륨을 제거하기 위하여 HCl을 이용하여 세척작업을 수행하면, 열분해된 갈륨은 제거되고 질화갈륨 패턴(11a)만 남아있게 된다.Finally, when the cleaning operation is performed using HCl to remove the gallium pyrolyzed from the gallium nitride layer 11, the pyrolyzed gallium is removed and only the gallium nitride pattern 11a remains.
따라서, 본 발명은 레이저를 이용하여 질화갈륨층을 열분해시켜, 질소를 기화시키고, 잔존되는 갈륨을 세척하여 제거함으로써, 단순한 공정으로 원하는 질화갈륨 패턴을 형성할 수 있게 된다.Accordingly, the present invention can thermally decompose the gallium nitride layer using a laser, vaporize nitrogen, and wash and remove the remaining gallium, thereby forming a desired gallium nitride pattern in a simple process.
이상에서 상세히 설명한 바와 같이 본 발명은 제거할 영역의 질화갈륨층을 열분해시켜 제거함으로써, 공정을 단순화시키고 후 공정으로 성장되는 질화갈륨층에 오염확률을 줄일 수 있는 효과가 발생한다.As described above in detail, according to the present invention, by removing the gallium nitride layer in the region to be removed by thermal decomposition, the effect of simplifying the process and reducing the probability of contamination on the gallium nitride layer grown in a later process is generated.
본 발명은 구체적인 예에 대해서만 상세히 설명되었지만 본 발명의 기술사상범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to specific examples, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and variations belong to the appended claims.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020020069250A KR20040040902A (en) | 2002-11-08 | 2002-11-08 | Method for selectively removing GaN substrate using laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362083A (en) * | 2014-11-17 | 2015-02-18 | 山东元旭光电有限公司 | Sapphire substrate recycling method for scrapped epitaxial wafer of patterned sapphire substrate |
| KR101984084B1 (en) * | 2018-01-25 | 2019-05-30 | 주식회사 썸백 | Removing Method of GaN Layer From Parts For LED Manufacturing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04303923A (en) * | 1991-03-29 | 1992-10-27 | Nec Corp | Method of forming selectively grown, buried semiconductor |
| JPH06163487A (en) * | 1992-11-20 | 1994-06-10 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Method for forming gan mask for selective growth |
| JPH07142404A (en) * | 1993-11-19 | 1995-06-02 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Method for forming and removing selective growth mask |
| KR20040040901A (en) * | 2002-11-08 | 2004-05-13 | 엘지전자 주식회사 | METHOD FOR MANUFACTURING GaN SUBSTRATE USING THERMALLY DECOMPOSED BUFFER LAYER |
-
2002
- 2002-11-08 KR KR1020020069250A patent/KR20040040902A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04303923A (en) * | 1991-03-29 | 1992-10-27 | Nec Corp | Method of forming selectively grown, buried semiconductor |
| JPH06163487A (en) * | 1992-11-20 | 1994-06-10 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Method for forming gan mask for selective growth |
| JPH07142404A (en) * | 1993-11-19 | 1995-06-02 | Hikari Gijutsu Kenkyu Kaihatsu Kk | Method for forming and removing selective growth mask |
| KR20040040901A (en) * | 2002-11-08 | 2004-05-13 | 엘지전자 주식회사 | METHOD FOR MANUFACTURING GaN SUBSTRATE USING THERMALLY DECOMPOSED BUFFER LAYER |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362083A (en) * | 2014-11-17 | 2015-02-18 | 山东元旭光电有限公司 | Sapphire substrate recycling method for scrapped epitaxial wafer of patterned sapphire substrate |
| KR101984084B1 (en) * | 2018-01-25 | 2019-05-30 | 주식회사 썸백 | Removing Method of GaN Layer From Parts For LED Manufacturing |
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