KR20040040901A - METHOD FOR MANUFACTURING GaN SUBSTRATE USING THERMALLY DECOMPOSED BUFFER LAYER - Google Patents

METHOD FOR MANUFACTURING GaN SUBSTRATE USING THERMALLY DECOMPOSED BUFFER LAYER Download PDF

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KR20040040901A
KR20040040901A KR1020020069249A KR20020069249A KR20040040901A KR 20040040901 A KR20040040901 A KR 20040040901A KR 1020020069249 A KR1020020069249 A KR 1020020069249A KR 20020069249 A KR20020069249 A KR 20020069249A KR 20040040901 A KR20040040901 A KR 20040040901A
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gallium nitride
buffer layer
substrate
layer
grown
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이현재
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엘지전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

PURPOSE: A method for manufacturing a GaN substrate using a thermally decomposed buffer layer is provided to considerably improve the quality of the GaN substrate. CONSTITUTION: The first GaN layer(11) is formed on a substrate(10). The second GaN layer is re-grown on the first GaN layer. Then, a thermal decomposition is carried out on the resultant structure for forming a buffer layer(13a) by separating N2 from Ga. At this time, the nitrogen is vaporized. The third GaN layer(14) is then grown on the nitrogen vaporized buffer layer. Preferably, laser beam is used for carrying out the thermal decomposition on the second GaN layer.

Description

열분해된 버퍼층을 이용한 질화갈륨 기판 제조방법{Method for manufacturing GaN substrate using thermally decomposed buffer layer}Method for manufacturing GaN substrate using thermally decomposed buffer layer

본 발명은 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조방법에 관한 것으로, 보다 상세하게는 질화갈륨층을 열분해시켜 버퍼층을 형성하고, 그 버퍼층 상부에 질화갈륨층을 성장시켜, 버퍼층으로 하여금 전위나 크랙의 전달을 차단함으로써, 고품질의 질화갈륨 기판을 제조할 수 있는 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a gallium nitride substrate using a pyrolyzed buffer layer, and more particularly, a gallium nitride layer is thermally decomposed to form a buffer layer, and a gallium nitride layer is grown on the buffer layer to cause the buffer layer to have a potential or crack. The present invention relates to a method for producing a gallium nitride substrate using a pyrolyzed buffer layer capable of producing a high quality gallium nitride substrate by blocking the transfer of.

일반적으로 Ⅲ-Ⅴ족 질화물계 반도체를 이용한 청·녹색 광 소자 및 전자 소자의 개발 및 응용에 대한 관심이 급격히 고조되고 있다.In general, interest in the development and application of blue and green optical devices and electronic devices using III-V nitride semiconductors has been rapidly increasing.

그러한 이유중의 하나로 고 결함 밀도에도 불구하고, 소자 수명에는 문제가 없는 것으로 보고하고 있다.One of the reasons is that despite the high defect density, there is no problem in device life.

일본의 Nichia 케미컬 사는 1만 시간 이상의 장 수명 청색 발광다이오드의 개발 성공과 더불어, 양산체제의 구축으로 전세계의 시장을 독점하려는 징후가 보이고 있으며, 여기에 대응하기 위하여 다양한 시도가 기업과 대학에서 이루어지고 있다.Japan's Nichia Chemical has succeeded in developing over 10,000 hours of long-life blue light-emitting diodes, and it has been showing signs of monopolizing the global market by establishing a mass production system. have.

한편, 질화갈륨(GaN)은 넓고 직접적인 에너지 밴드갭과 원자간의 큰 상호결합력 그리고 높은 열전도성으로 인해 광소자 및 고온, 고전력 소자로서 이상적인 특성을 갖고 있다.Meanwhile, gallium nitride (GaN) has ideal characteristics as an optical device, a high temperature, and a high power device due to its wide and direct energy band gap, large mutual coupling force between atoms, and high thermal conductivity.

최근, 고효율의 단파장 광소자 및 전력 전자소자에 대한 수요가 늘어남에 따라, 이러한 용도에 적합한 것으로 알려져 있는 질화갈륨(GaN) 계열의 화합물 반도체에 대한 연구가 많이 진행되고 있다.In recent years, as the demand for high efficiency short wavelength optical devices and power electronic devices increases, researches on gallium nitride (GaN) series compound semiconductors known to be suitable for such applications have been conducted.

이런 질화갈륨 계열의 화합물 반도체를 이용하여 제조되는 소자들은 질화갈륨 계열의 화합물 반도체의 단결정 박막 즉, 에피 박막층으로 구성된다.Devices manufactured using such a gallium nitride-based compound semiconductor are composed of a single crystal thin film, that is, an epi thin film layer of a gallium nitride-based compound semiconductor.

우수한 에피 박막을 얻기 위해서는 결함이 적은 동종의 단결정 물질 기판으로 제조가 되어야 한다.In order to obtain an excellent epitaxial thin film, it must be manufactured with a homogeneous single crystal substrate having few defects.

그러나 아직까지 질화갈륨(GaN)의 단결정 성장이 어려워 2인치 이상의 대면적 단결정 기판을 제조하기가 어려운 실정이다.However, gallium nitride (GaN) single crystal growth is still difficult to manufacture a large area single crystal substrate of more than 2 inches.

따라서, 현재까지 질화물 화합물 반도체를 이용한 소자는 대부분 사파이어나 실리콘카바이드(SiC) 등의 이종 기판 위에 성장되고 있다.Therefore, until now, devices using nitride compound semiconductors have been mostly grown on dissimilar substrates such as sapphire and silicon carbide (SiC).

그러나, 이종기판은 질화물 화합물 반도체와의 격자 상수 및 열팽창 계수의 차이가 커서, 이종기판에 성장되는 질화갈륨 에피 박막 내부에 전위(Dislocation), 크랙(Crack) 등의 결함이 상당수 존재하게 된다.However, the dissimilar substrate has a large difference in lattice constant and thermal expansion coefficient with the nitride compound semiconductor, and a large number of defects such as dislocations and cracks exist in the gallium nitride epitaxial film grown on the dissimilar substrate.

이런 결함들을 갖는 기판으로 소자를 제조할 경우, 결함들이 누설전류의 통로가 되거나, 비발광 부위로 작용하여 소자의 성능을 저하시키게 된다.When the device is manufactured from a substrate having such defects, the defects become a passage of leakage current or act as a non-light emitting portion, thereby degrading the performance of the device.

도 1은 종래 기술에 따라 이종 기판의 상부에 성장된 질화갈륨층의 모식 단면도로써, 사파이어나 실리콘카바이드(SiC) 등의 기판(10)의 상부에 질화갈륨층(11)을 성장시키면, 성장되는 질화갈륨과 기판(10)과의 격자 상수와 열팽창 계수의 차이로 인하여 성장된 질화갈륨층(11)에는 전위와 크랙같은 결함(12)이 형성된다.1 is a schematic cross-sectional view of a gallium nitride layer grown on top of a heterogeneous substrate according to the prior art, and is grown by growing a gallium nitride layer 11 on top of a substrate 10 such as sapphire or silicon carbide (SiC). Defects 12 such as dislocations and cracks are formed in the grown gallium nitride layer 11 due to the difference in lattice constant and thermal expansion coefficient between the gallium nitride and the substrate 10.

전술된 문제점을 해결하기 위하여, 최근까지 선택영역 에피성장(Selective Area Epitaxy Growth)법, 즉, 측면 에피텍셜 성장(Lateral Epitaxial Overgrowth)법으로 질화갈륨 기판을 제조하고 있으며, 다른 한편으로는 더욱 특성이 우수한 질화갈륨 기판을 개발하려는 노력이 계속되고 있다.In order to solve the above-mentioned problem, until recently, gallium nitride substrates have been manufactured by the Selective Area Epitaxy Growth method, that is, the Lateral Epitaxial Overgrowth method. Efforts are being made to develop superior gallium nitride substrates.

한편, 현재의 프리 스탠팅(Free-Standing) 질화 갈륨 기판을 형성하는 방법은 이종기판에 질화갈륨 후막을 성장 후, 레이저 리프트 오프(Laser Lift-Off)방법으로 질화갈륨을 이종기판에서 분리한다.Meanwhile, in the current free-standing gallium nitride substrate forming method, a gallium nitride thick film is grown on a dissimilar substrate, and gallium nitride is separated from the dissimilar substrate by a laser lift-off method.

다른 방법으로 기계적으로 연마를 해서 이종기판을 갈아내어 분리하는 방법도 주로 이용되고 있다.Another method is to use a method of mechanically polishing to grind and separate dissimilar substrates.

그러므로, 질화갈륨 성장 시 발생되는 격자 상수 및 열팽창 계수의 차이에 의한 결함은 프리스탠딩을 수행한 후에도 질화갈륨 기판에 그대로 잔존하여, 이를 이용하여 제조된 소자에 악영향을 인가하게 된다.Therefore, defects due to differences in lattice constants and thermal expansion coefficients generated during gallium nitride growth remain on the gallium nitride substrate even after freestanding, thereby adversely affecting devices manufactured using the same.

따라서, 결함밀도가 감소되는 질화갈륨 기판의 제조방법이 요구되는 것이다.Therefore, there is a need for a method of manufacturing a gallium nitride substrate in which defect density is reduced.

이러한 문제점을 해결하기 위한 많은 연구가 진행되고 있다.Many researches have been conducted to solve this problem.

그의 일환으로, 질화갈륨은 기판으로 사용되어지는 사파이어와의 격자 불일치와 열팽창계수의 큰 차이로 인해 발생되는 결함 문제를 보상하기 위해 많은 버퍼(Buffer)들이 연구되어지고 있다.As part of this, many buffers have been studied to compensate for defects caused by lattice mismatch and large difference in coefficient of thermal expansion with sapphire used as a substrate.

많은 버퍼들이 질화 갈륨이 아닌 다른 물질로 만들어지거나 아니면 여러층의 결정특성이 다른 질화 갈륨을 이용하고 있다.Many buffers are made of materials other than gallium nitride, or gallium nitride, which has different crystallographic properties.

이런 방법은 전위나 크랙 등의 결함밀도를 줄일 수 있으나, 가스 플로우(Gas flow)와 온도 등을 정밀하게 조절해 주어야 하며, 제조 공정이 어려운 문제점이 있다.This method can reduce the density of defects such as dislocations or cracks, but it is necessary to precisely control the gas flow and temperature, and the manufacturing process is difficult.

이에 본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로,질화갈륨층을 열분해시켜 버퍼층을 형성하고, 그 버퍼층 상부에 질화갈륨층을 성장시켜, 버퍼층으로 하여금 전위나 크랙의 전달을 차단함으로써, 고품질의 질화갈륨 기판을 제조할 수 있는 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조방법을 제공하는 데 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, by thermally decomposing a gallium nitride layer to form a buffer layer, by growing a gallium nitride layer on top of the buffer layer, by blocking the transfer of potentials or cracks to the buffer layer It is an object of the present invention to provide a method for producing a gallium nitride substrate using a pyrolyzed buffer layer capable of producing a high quality gallium nitride substrate.

상기한 본 발명의 목적을 달성하기 위한 바람직한 양태(樣態)는, 기판의 상부에 제 1 질화갈륨층을 형성하는 단계와;A preferred aspect for achieving the above object of the present invention comprises the steps of forming a first gallium nitride layer on top of the substrate;

상기 제 1 질화갈륨층의 상부에 제 2 질화갈륨층을 재 성장시킨 후에, 열분해시켜 갈륨(Ga)과 질소(N2)를 분리시켜, 질소가 기화된 버퍼층을 형성하는 단계와;Regrowing the second gallium nitride layer on top of the first gallium nitride layer and thermally decomposing gallium (Ga) and nitrogen (N 2 ) to form a nitrogen-vaporized buffer layer;

상기 질소가 기화된 버퍼층의 상부에, 제 3 질화갈륨층을 성장시키는 단계로 이루어진 것을 특징으로 하는 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조방법이 제공된다.A method of manufacturing a gallium nitride substrate using a pyrolyzed buffer layer, comprising growing a third gallium nitride layer on the nitrogen-vaporized buffer layer.

도 1은 종래 기술에 따라 이종 기판의 상부에 성장된 질화갈륨층의 모식 단면도이다.1 is a schematic cross-sectional view of a gallium nitride layer grown on top of a dissimilar substrate according to the prior art.

도 2a 내지 2c는 본 발명에 따른 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조 공정 모식도이다.2A to 2C are schematic diagrams illustrating a manufacturing process of a gallium nitride substrate using a pyrolyzed buffer layer according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 기판 11,12,14 : 질화갈륨층10: substrate 11, 12, 14: gallium nitride layer

12 : 결함 13a : 버퍼층12 defect 13a buffer layer

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

도 2a 내지 2c는 본 발명에 따른 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조 공정 모식도로써, 먼저, 도 2a에서, 기판(10)의 상부에 제 1 질화갈륨층(11)을 형성한다.2A to 2C are schematic diagrams illustrating a manufacturing process of a gallium nitride substrate using a pyrolyzed buffer layer according to the present invention. First, in FIG. 2A, a first gallium nitride layer 11 is formed on the substrate 10.

여기서, 성장된 제 1 질화갈륨층(11)의 표면에는 다수의 전위나 크랙등의 결함(12)이 형성된다.Here, a number of defects 12 such as dislocations or cracks are formed on the surface of the grown first gallium nitride layer 11.

상기 기판(10)이 사파이어 기판이면, 결함(12)의 밀도는 질화갈륨 기판보다는 더 증가한다.If the substrate 10 is a sapphire substrate, the density of the defect 12 increases more than the gallium nitride substrate.

그 후에, 상기 제 1 질화갈륨층(11)의 상부에 제 2 질화갈륨층(13)을 재 성장시킨 후에, 열분해시켜 갈륨(Ga)과 질소(N2)를 분리시켜, 질소가 기화된 버퍼층을형성한다.Thereafter, the second gallium nitride layer 13 is regrown on the first gallium nitride layer 11, and then pyrolyzed to separate gallium (Ga) and nitrogen (N 2 ) to form a nitrogen-vaporized buffer layer. Form.

이 때, 제 2 질화갈륨층(13)을 열분해시키는 것은 레이저를 조사하여 수행한다.At this time, the thermal decomposition of the second gallium nitride layer 13 is performed by irradiating a laser.

마지막으로, 상기 질소가 기화된 버퍼층(13a)의 상부에, 제 3 질화갈륨층(14)을 성장시키면, 버퍼층(13a)이 제 1 질화갈륨층(11)에 존재하는 결함의 진행을 방지함으로 양질의 질화갈륨층이 성장된다.Finally, when the third gallium nitride layer 14 is grown on the nitrogen-vaporized buffer layer 13a, the buffer layer 13a prevents the progress of defects present in the first gallium nitride layer 11. A good quality gallium nitride layer is grown.

여기서, 암모니아(NH3) 분위기에서 제 3 질화갈륨층(14)을 성장시키면, 상기 버퍼층(13a)에 존재하는 갈륨(Ga)은 질화갈륨으로 성장된다.When the third gallium nitride layer 14 is grown in an ammonia (NH 3 ) atmosphere, gallium (Ga) present in the buffer layer 13a is grown into gallium nitride.

결과적으로, 본 발명은 열분해된 버퍼층의 상부에 질화갈륨을 성장시키면, 초기 성장된 질화갈륨층에 잔존하던 전위나 크랙의 전달을 방지함으로써, 버퍼층의 상부에 성장된 질화갈륨층의 결정성을 개선시킬 수 있게 된다.As a result, the present invention improves the crystallinity of the gallium nitride layer grown on top of the buffer layer by growing gallium nitride on top of the pyrolyzed buffer layer, thereby preventing transfer of potentials or cracks remaining in the initially grown gallium nitride layer. You can do it.

이상에서 상세히 설명한 바와 같이 본 발명은 질화갈륨층을 열분해시켜 버퍼층을 형성하고, 그 버퍼층 상부에 질화갈륨층을 성장시켜, 버퍼층으로 하여금 전위나 크랙의 전달을 차단함으로써, 고품질의 질화갈륨 기판을 제조할 수 있는 효과가 발생한다.As described in detail above, the present invention thermally decomposes a gallium nitride layer to form a buffer layer, grows a gallium nitride layer on the buffer layer, and prevents the buffer layer from transferring dislocations or cracks, thereby producing a high quality gallium nitride substrate. The effect is possible.

더불어, 공정이 간단하여 제조경비를 줄일 수 있는 효과도 있다.In addition, the process is simple, there is an effect that can reduce the manufacturing cost.

본 발명은 구체적인 예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며,이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to specific examples, it will be apparent to those skilled in the art that various modifications and variations are possible within the spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (2)

기판의 상부에 제 1 질화갈륨층을 형성하는 단계와;Forming a first gallium nitride layer on the substrate; 상기 제 1 질화갈륨층의 상부에 제 2 질화갈륨층을 재 성장시킨 후에, 열분해시켜 갈륨(Ga)과 질소(N2)를 분리시켜, 질소가 기화된 버퍼층을 형성하는 단계와;Regrowing the second gallium nitride layer on top of the first gallium nitride layer and thermally decomposing gallium (Ga) and nitrogen (N 2 ) to form a nitrogen-vaporized buffer layer; 상기 질소가 기화된 버퍼층의 상부에, 제 3 질화갈륨층을 성장시키는 단계로 구성된 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조 방법.A method of manufacturing a gallium nitride substrate using a pyrolyzed buffer layer consisting of growing a third gallium nitride layer on the nitrogen-vaporized buffer layer. 제 1 항에 있어서,The method of claim 1, 상기 제 2 질화갈륨층을 열분해시키는 것은 레이저를 조사하여 수행하는 것을 특징으로 하는 열분해된 버퍼층을 이용한 질화갈륨 기판의 제조 방법.Pyrolyzing the second gallium nitride layer is performed by irradiating a laser.
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JPH09134878A (en) * 1995-11-10 1997-05-20 Matsushita Electron Corp Manufacture of gallium nitride compound semiconductor
JP2001144325A (en) * 1999-11-12 2001-05-25 Sony Corp Method of manufacturing nitride iii-v compound semiconductor and semiconductor device
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JP2001144325A (en) * 1999-11-12 2001-05-25 Sony Corp Method of manufacturing nitride iii-v compound semiconductor and semiconductor device
JP2002009003A (en) * 2000-06-23 2002-01-11 Ricoh Co Ltd Semiconductor substrate, its manufacturing method, and light emitting device
US6589857B2 (en) * 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040040902A (en) * 2002-11-08 2004-05-13 엘지전자 주식회사 Method for selectively removing GaN substrate using laser

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