KR20030056250A - 액티브 매트릭스형 유기발광다이오드 소자용 박막트랜지스터 - Google Patents
액티브 매트릭스형 유기발광다이오드 소자용 박막트랜지스터 Download PDFInfo
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- KR20030056250A KR20030056250A KR1020010086425A KR20010086425A KR20030056250A KR 20030056250 A KR20030056250 A KR 20030056250A KR 1020010086425 A KR1020010086425 A KR 1020010086425A KR 20010086425 A KR20010086425 A KR 20010086425A KR 20030056250 A KR20030056250 A KR 20030056250A
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- Prior art keywords
- thin film
- film transistor
- light emitting
- organic light
- emitting diode
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 239000011159 matrix material Substances 0.000 title claims abstract description 11
- 229920001621 AMOLED Polymers 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 3
- 241000826860 Trapezium Species 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 239000003990 capacitor Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000872 buffer Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (5)
- 게이트 전극을 이온 스타퍼(ion-stopper)로 이용하는 탑게이트형 폴리실리콘 박막트랜지스터를 포함하는 액티브 매트릭스형 유기전계발광 다이오드 소자(Active Matrix type Organic Light Emitting Diode Device)에 있어서,양측부를 소스 및 드레인 영역으로 가지는 폴리실리콘으로 이루어진 반도체층과;상기 반도체층의 중앙부와 절연된 상태로 교차하며, 사다리꼴 형상을 가지는 게이트 전극과;상기 게이트 전극과 교차되는 반도체층 영역으로 이루어진 채널을 포함하는 액티브 매트릭스형 유기전계발광 다이오드 소자용 박막트랜지스터.
- 게이트 전극을 이온 스타퍼(ion-stopper)로 이용하는 탑게이트형 폴리실리콘 박막트랜지스터를 포함하는 액티브 매트릭스형 유기전계발광 다이오드 소자(Active Matrix type Organic Light Emitting Diode Device)에 있어서,양측부를 소스 및 드레인 영역으로 가지는 폴리실리콘으로 이루어진 반도체층과;상기 반도체층의 중앙부와 절연된 상태로 교차하며, 상기 교차 중앙부가 상부 및 하부보다 오목한 패턴으로 이루어진 게이트 전극과;상기 게이트 전극과 교차되는 반도체층 영역으로 이루어진 채널을 포함하는 액티브 매트릭스형 유기전계발광 다이오드 소자용 박막트랜지스터.
- 제 1 항 또는 제 2 항 중 어느 하나의 항에 있어서,상기 반도체층은 채널 영역을 이루는 폴리실리콘층과, 상기 소스 및 드레인 전극을 이루는 불순물 폴리실리콘층으로 구성되는 액티브 매트릭스형 유기전계발광 다이오드 소자용 박막트랜지스터.
- 제 1 항 또는 제 2 항 중 어느 하나의 항에 있어서,상기 반도체층의 소스 및 드레인 영역과 연결되는 소스 및 드레인 전극을 포함하는 액티브 매트릭스형 유기전계발광 다이오드 소자용 박막트랜지스터.
- 제 1 항 또는 제 2 항 중 어느 한 항에 의해 형성된 박막트랜지스터와, 상기 박막트랜지스터와 연결된 유기전계발광 다이오드를 포함하는 액티브 매트릭스형 유기전계발광 다이오드 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0086425A KR100466963B1 (ko) | 2001-12-27 | 2001-12-27 | 액티브 매트릭스형 유기발광다이오드 소자용 박막트랜지스터 |
Applications Claiming Priority (1)
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KR10-2001-0086425A KR100466963B1 (ko) | 2001-12-27 | 2001-12-27 | 액티브 매트릭스형 유기발광다이오드 소자용 박막트랜지스터 |
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KR20030056250A true KR20030056250A (ko) | 2003-07-04 |
KR100466963B1 KR100466963B1 (ko) | 2005-01-24 |
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KR10-2001-0086425A KR100466963B1 (ko) | 2001-12-27 | 2001-12-27 | 액티브 매트릭스형 유기발광다이오드 소자용 박막트랜지스터 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220019530A (ko) * | 2020-08-10 | 2022-02-17 | 재단법인대구경북과학기술원 | 반도체 트랜지스터 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI472037B (zh) | 2005-01-28 | 2015-02-01 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
KR102617314B1 (ko) | 2016-07-07 | 2023-12-21 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH02109369A (ja) * | 1988-10-18 | 1990-04-23 | Mitsubishi Electric Corp | 半導体装置 |
JPH0488641A (ja) * | 1990-07-31 | 1992-03-23 | Toshiba Corp | 薄膜トランジスタの製造方法 |
JPH06260643A (ja) * | 1993-03-05 | 1994-09-16 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ |
GB9416899D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | Manufacture of electronic devices comprising thin-film circuitry |
JPH10154816A (ja) * | 1996-11-21 | 1998-06-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220019530A (ko) * | 2020-08-10 | 2022-02-17 | 재단법인대구경북과학기술원 | 반도체 트랜지스터 |
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