KR20030029699A - 박막트랜지스터 및 그 제조방법 - Google Patents
박막트랜지스터 및 그 제조방법 Download PDFInfo
- Publication number
- KR20030029699A KR20030029699A KR1020010061801A KR20010061801A KR20030029699A KR 20030029699 A KR20030029699 A KR 20030029699A KR 1020010061801 A KR1020010061801 A KR 1020010061801A KR 20010061801 A KR20010061801 A KR 20010061801A KR 20030029699 A KR20030029699 A KR 20030029699A
- Authority
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- South Korea
- Prior art keywords
- gate electrode
- region
- layer
- source
- thin film
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims abstract description 90
- 239000012535 impurity Substances 0.000 claims abstract description 46
- 239000011229 interlayer Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001994 activation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (6)
- 기판 상부에 활성층을 형성하는 단계와,상기 활성층의 양측에 불순물을 이온주입하여 제1 불순물영역을 형성하는 단계와,상기 활성층 상에 게이트절연막을 형성하는 단계와,상기 게이트절연막 상에 금속층을 증착하는 단계와,상기 금속층 상에 이후에 형성될 게이트전극보다 큰 폭을 갖는 포토레지스트패턴을 형성하는 단계와,상기 포토레지스트패턴으로 상기 금속층을 패터닝하여 게이트전극을 형성하는 단계와,상기 포토레지스트패턴으로 상기 제1 불순물영역 내에 상기 불순물을 더 이온주입하여 제2 불순물영역을 형성하는 단계를 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 불순물은 N형인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 제1 불순물영역은 상기 게이트전극의 외곽으로 신장되어 형성되는 것을특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 제2 불순물영역을 형성한 후상기 게이트절연막 상에 상기 게이트전극을 덮도록 층간절연막을 형성하는 단계와,상기 제1 및 제2 불순물영역과 부분적으로 접촉하는 소스전극 및 드레인전극을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 기판 상부에 폴리실리콘형 반도체층을 구비하는 박막트랜지스터에 있어서,상기 반도체층 상부에 게이트절연막을 사이에 두고 형성되는 게이트전극과,상기 반도체층 내에 게이트전극보다 작은 폭을 갖는 채널의 양측에 상기 게이트전극의 외곽으로 신장된 제1 불순물영역과,상기 반도체층 내에 제1 불순물영역에 인접하는 제2 불순물영역과,상기 게이트전극과 층간절연막을 사이에 두고 상기 제1 및 제2 불순물영역과 부분적으로 접촉하는 소스전극 및 드레인전극을 구비하는 것을 특징으로 하는 박막트랜지스터.
- 제 5 항에 있어서,상기 제1 불순물영역의 이온농도는 상기 제2 불순물영역의 이온농도보다 낮은 것을 특징으로 하는 박막트랜지스터.
Priority Applications (1)
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KR10-2001-0061801A KR100438523B1 (ko) | 2001-10-08 | 2001-10-08 | 박막트랜지스터 및 그 제조방법 |
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KR10-2001-0061801A KR100438523B1 (ko) | 2001-10-08 | 2001-10-08 | 박막트랜지스터 및 그 제조방법 |
Publications (2)
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KR20030029699A true KR20030029699A (ko) | 2003-04-16 |
KR100438523B1 KR100438523B1 (ko) | 2004-07-03 |
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KR10-2001-0061801A KR100438523B1 (ko) | 2001-10-08 | 2001-10-08 | 박막트랜지스터 및 그 제조방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100686337B1 (ko) * | 2003-11-25 | 2007-02-22 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 사용하는 평판표시장치 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102090460B1 (ko) * | 2012-12-31 | 2020-03-18 | 엘지디스플레이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
CN104465702B (zh) * | 2014-11-03 | 2019-12-10 | 深圳市华星光电技术有限公司 | Amoled背板的制作方法 |
Family Cites Families (5)
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JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JPH07122752A (ja) * | 1993-10-25 | 1995-05-12 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JPH09191111A (ja) * | 1995-11-07 | 1997-07-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TW418539B (en) * | 1998-05-29 | 2001-01-11 | Samsung Electronics Co Ltd | A method for forming TFT in liquid crystal display |
GB0008487D0 (en) * | 2000-04-07 | 2000-05-24 | Koninkl Philips Electronics Nv | Electronic device manufacture |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100686337B1 (ko) * | 2003-11-25 | 2007-02-22 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 사용하는 평판표시장치 |
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KR100438523B1 (ko) | 2004-07-03 |
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