KR20020037088A - 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법 - Google Patents
멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법 Download PDFInfo
- Publication number
- KR20020037088A KR20020037088A KR1020000067065A KR20000067065A KR20020037088A KR 20020037088 A KR20020037088 A KR 20020037088A KR 1020000067065 A KR1020000067065 A KR 1020000067065A KR 20000067065 A KR20000067065 A KR 20000067065A KR 20020037088 A KR20020037088 A KR 20020037088A
- Authority
- KR
- South Korea
- Prior art keywords
- microstructure
- alcohol
- pressure
- mems device
- oxide film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000012071 phase Substances 0.000 claims abstract description 17
- 239000012808 vapor phase Substances 0.000 claims abstract description 9
- 238000009835 boiling Methods 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 39
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 35
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 34
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 27
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- -1 LTO Chemical compound 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 2
- 230000005587 bubbling Effects 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 3
- 238000010586 diagram Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 229960004592 isopropanol Drugs 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000009833 condensation Methods 0.000 description 7
- 230000005494 condensation Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002210 supercritical carbon dioxide drying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
- B81C1/00936—Releasing the movable structure without liquid etchant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
- Weting (AREA)
Abstract
Description
Claims (10)
- 무수 불화수소와 버블링한 알코올 증기를 공급하는 단계;상기 무수 불화수소 및 알코올의, 공급장치 및 이동통로를 알코올의 끓는 점 이상으로 유지하는 단계;온도와 압력을 물의 상평형도의 증기상영역이 되도록 조절하여 기상식각 공정을 수행하는 단계; 및미세구조체 막 하부의 희생산화막을 제거하는 단계를 포함하는 멤즈(MEMS; Micro Electro Mechanical System)소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 제 1 항에 있어서,상기 식각 공정 수행시 압력을 25-75torr로 하는 것을 특징으로 하는 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 제 1 항에 있어서,상기 식각 공정 수행시의 온도를 25-80℃로 하는 것을 특징으로 하는 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 제 1 항에 있어서,상기 기상식각 공정을 수행하기에 앞서 상기 산화막의 일부를 습식식각 방법으로 식각하는 단계를 부가적으로 포함하는 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 제 1 항에 있어서,상기 희생산화막이 TEOS, LTO, PSG, BPSG 또는 열산화막(thermal oxide)인 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 제 1 항에 있어서, 상기 알코올로 메탄올, 이소프로필 알코올, 에탄올 중 1 종 이상을 사용하는 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 제 1 항에 있어서, 상기 멤즈소자가 적층이나 단결정 실리콘구조인 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법.
- 멤즈소자의 미세구조체를 위한 희생산화막의 제거 방법에 있어서, 반응실내의 온도 및 압력을 물의 상평형도의 증기상영역이 되도록 조절하여, 무수 불화수소 및 알코올에 의한 기상식각 공정으로 상기 희생산화막을 고착없이 제거하는 것을 특징으로 하는 방법.
- 제 8 항에 있어서,상기 반응실의 압력을 25-75torr로 하는 것을 특징으로 하는 멤즈소자의 미세구조체를 제조하기 위한 희생산화막을 고착없이 제거하는 방법.
- 제 8 항에 있어서,상기 반응실의 온도를 25-80℃로 하는 것을 특징으로 하는 멤즈소자의 미세구조체를 제조하기 위한 희생산화막을 고착없이 제거하는 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0067065A KR100381011B1 (ko) | 2000-11-13 | 2000-11-13 | 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법 |
US09/753,065 US6806205B2 (en) | 2000-11-13 | 2000-12-29 | Stiction-free microstructure releasing method for fabricating MEMS device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0067065A KR100381011B1 (ko) | 2000-11-13 | 2000-11-13 | 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20020037088A true KR20020037088A (ko) | 2002-05-18 |
KR100381011B1 KR100381011B1 (ko) | 2003-04-26 |
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Family Applications (1)
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KR10-2000-0067065A KR100381011B1 (ko) | 2000-11-13 | 2000-11-13 | 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법 |
Country Status (2)
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US (1) | US6806205B2 (ko) |
KR (1) | KR100381011B1 (ko) |
Cited By (2)
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KR20030067847A (ko) * | 2002-02-08 | 2003-08-19 | 조동일 | 갈륨아세나이드 반도체 미세구조물의 제조 방법 |
WO2005124869A1 (en) * | 2004-06-18 | 2005-12-29 | Electronics And Telecommunications Research Institute | Micro-mechanical structure and method for manufacturing the same |
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US7404863B2 (en) * | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
US7416611B2 (en) * | 1997-05-09 | 2008-08-26 | Semitool, Inc. | Process and apparatus for treating a workpiece with gases |
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US7279431B2 (en) * | 2003-06-18 | 2007-10-09 | Semitool, Inc. | Vapor phase etching MEMS devices |
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US5658636A (en) * | 1995-01-27 | 1997-08-19 | Carnegie Mellon University | Method to prevent adhesion of micromechanical structures |
US5954911A (en) * | 1995-10-12 | 1999-09-21 | Semitool, Inc. | Semiconductor processing using vapor mixtures |
US6126847A (en) * | 1997-11-24 | 2000-10-03 | Micron Technology Inc. | High selectivity etching process for oxides |
US6238580B1 (en) * | 1998-02-20 | 2001-05-29 | The Aerospace Corporation | Method of HF vapor release of microstructures |
-
2000
- 2000-11-13 KR KR10-2000-0067065A patent/KR100381011B1/ko active IP Right Grant
- 2000-12-29 US US09/753,065 patent/US6806205B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030067847A (ko) * | 2002-02-08 | 2003-08-19 | 조동일 | 갈륨아세나이드 반도체 미세구조물의 제조 방법 |
WO2005124869A1 (en) * | 2004-06-18 | 2005-12-29 | Electronics And Telecommunications Research Institute | Micro-mechanical structure and method for manufacturing the same |
US7728395B2 (en) | 2004-06-18 | 2010-06-01 | Electronics And Telecommunications Research Institute | Micro-mechanical structure and method for manufacturing the same |
Also Published As
Publication number | Publication date |
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US6806205B2 (en) | 2004-10-19 |
KR100381011B1 (ko) | 2003-04-26 |
US20020058422A1 (en) | 2002-05-16 |
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