KR20010030460A - Resist stripping composition - Google Patents

Resist stripping composition Download PDF

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KR20010030460A
KR20010030460A KR1020000055425A KR20000055425A KR20010030460A KR 20010030460 A KR20010030460 A KR 20010030460A KR 1020000055425 A KR1020000055425 A KR 1020000055425A KR 20000055425 A KR20000055425 A KR 20000055425A KR 20010030460 A KR20010030460 A KR 20010030460A
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ether
glycol
resist
diethylene glycol
water
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KR100859900B1 (en
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이케모토가즈토
아베고지로
아오야마데츠오
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오오히라 아키라
미츠비시 가스 가가쿠 가부시키가이샤
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    • G03F7/42—Stripping or agents therefor
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    • G03F7/422—Stripping or agents therefor using liquids only
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Abstract

PURPOSE: To obtain a resist removing solution composition which can thoroughly remove the residue of a resist at a low temperature in a short time after etching or ashing in a wiring step for a semiconductor device or a liquid crystal panel device and does not corrode a wiring material in rinsing. CONSTITUTION: The resist removing solution composition consists of 0.001-0.5 wt.% fluorine compound, 1-99 wt.% ether solvent and the balance water.

Description

레지스트 박리조성물{RESIST STRIPPING COMPOSITION}Resist Stripping Composition {RESIST STRIPPING COMPOSITION}

본 발명은 반도체 집적회로의 제조에 사용되는 레지스트 박리조성물, 더 구체적으로 에칭 혹은 애쉬처리후 남은 레지스트 잔류물을 제거하기 위한 레지스트 박리조성물에 관계한다.The present invention relates to a resist stripping composition for use in the manufacture of semiconductor integrated circuits, and more particularly to a resist stripping composition for removing resist residues left after etching or ashing.

IC 및 LSI 같은 반도체소자 및 액정패널소자는 일반적으로 포토레지스트 필름을 무기판기판 상에 형성하고; 광 및 후속단계에 노출시켜 포토레지스트 막을 패턴화하고; 패턴화된 포토레지스트 막을 마스크로 이용하여 무기판기판의 마스크되지 않은 부분을 반응성 기체로 무수에칭 처리하고; 포토레지스트 막을 애쉬처리하고; 및 무기판기판로부터 포토레지스트 잔류물(보호증착막)을 제거하는 단계에 의해 제조되었다. 패턴화된 포토레지스트 막을 통한 무기판기판의 무수에칭 처리는 보통 할로겐계 반응기체를 이용하여 실행하기 때문에, 불필요한 레지스트(포토페지스트) 잔류물은 할로겐계 반응기체 및 레지스트 간의 반응에 의해 생성된다. 레지스트 잔류물은 개회로 및 비정상 배선 등의 문제를 일으키는 성향이 있으므로 완벽하게 제거해야한다.Semiconductor devices and liquid crystal panel devices such as ICs and LSIs generally form photoresist films on inorganic substrate substrates; Patterning the photoresist film by exposure to light and subsequent steps; Using the patterned photoresist film as a mask, an unetched portion of the inorganic substrate is subjected to anhydrous etching with a reactive gas; Ashing the photoresist film; And removing the photoresist residue (protective deposition film) from the inorganic substrate. Since the anhydrous etching treatment of the inorganic substrate through the patterned photoresist film is usually performed using a halogen-based reactor, unnecessary resist (photoresist) residues are produced by the reaction between the halogen-based reactor and the resist. Resist residues tend to cause problems such as open circuits and abnormal wiring, so they must be removed completely.

통상, 알칼리성 박리액이 레지스트 잔류물 제거용도로 사용되어왔다. 알칼리성 박리액으로서 알카놀아민 혹은 폴리알킬렌 폴리아민의 산화에틸렌 첨가생성물, 술폰 화합물 및 글리콜 모노알킬 에테르을 함유하는 박리액(일본특개공 62-49355); 주성분인 디메틸술폭시드와 디에틸렌글리콜 모노알킬 에테르 및 질소함유 유기 히드록시 화합물을 함유하는 박리액(일본특개공 64-42653) 등이 있다. 이들 알칼리성 박리액은 그러나, 사용시 흡수된 물의 작용에 의해 첨가생성물로부터 유리된 아민 때문에 알칼리성을 띄거나 혹은 알코올 등의 유기용매 대신 물로 세척한 경우 박리처리후 세척시에 알칼리성을 갖게 되고 따라서 미세한 배선을 형성하기 위해 널리 이용되는 재료인 알루미늄에 심각한 부식작용을 일으키게 된다. 따라서, 공지의 박리액은 최근의 엄격한 치수정밀성 조건을 요하는 마이크로 프로세싱 기술에 사용하기에는 적합치가 않다.Typically, alkaline stripping solutions have been used for removing resist residues. Stripping solution containing ethylene oxide addition product of alkanolamine or polyalkylene polyamine, sulfone compound and glycol monoalkyl ether as alkaline stripping solution (Japanese Patent Laid-Open No. 62-49355); And a stripper (Japanese Patent Publication No. 64-42653) containing dimethyl sulfoxide, diethylene glycol monoalkyl ether, and a nitrogen-containing organic hydroxy compound as main components. These alkaline stripping solutions, however, are alkaline due to the amine liberated from the additive product by the action of water absorbed during use, or alkaline when washed with water instead of organic solvents such as alcohols, thus making fine wiring. It causes severe corrosion on aluminum, a widely used material for forming. Thus, known stripping solutions are not suitable for use in microprocessing techniques that require stringent dimensional precision conditions in recent years.

근래에는, 플루오르 화합물, 아미드, 디메틸술폭시드(DMSO) 용매 등을 함유한 수용액 및 부식억제제가 고박리력 및 간편성 때문에 레지스트 박리액으로 사용한다 (일본특개공 8-202052 및 미국특허 제5,962,385호). 그러나, 이들 플루오르계 레지스트 박리액은 박리처리후 물로 헹구는 과정에서 알루미늄재질의 배선을 부식시킨다. 즉, 상기 박리액은 물에 희석될 경우 배선재료에 대해 고부식성을 갖게된다.Recently, an aqueous solution containing a fluorine compound, an amide, a dimethyl sulfoxide (DMSO) solvent, and the like are used as a resist stripping solution due to its high peeling power and simplicity (Japanese Patent Application Laid-Open No. 8-202052 and US Patent No. 5,962,385). . However, these fluorine-based resist stripping liquids corrode aluminum wiring in the process of rinsing with water after the stripping treatment. That is, the stripping solution has high corrosion resistance to the wiring material when diluted with water.

또한, 플루오르 화합물은 플루오르계 레지스트 박리액을 유기용매로 헹굴 경우 증착된다. 따라서, 플루오르계 레지스트 박리액을 박리처리후 유기용매로 헹구기만 해서는 레지스트 잔류물의 제거가 불충분하다.In addition, the fluorine compound is deposited when the fluorine-based resist stripping solution is rinsed with an organic solvent. Therefore, only rinsing the fluorine-based resist stripping solution with the organic solvent after the stripping treatment is insufficient to remove the resist residue.

도 1은 산소-플라즈마 애쉬처리후 및 박리처리전의 Al-Cu 합금 인쇄기판의 사시방향으로 부분절단한 단면도; 및1 is a cross-sectional view partially cut in the direction of an Al—Cu alloy printed substrate after oxygen-plasma ash treatment and before peeling treatment; And

도 2는 레지스트 박리조성물의 부식성과 물의 희석도 간의 관계를 도시하는 그래프.2 is a graph showing the relationship between the corrosiveness of a resist stripping composition and the degree of dilution of water.

본 발명은 상기와 같은 종래의 문제를 해결하기 위한 것으로서, 한가지 목적은 IC 및 LSI 같은 반도체소자나 액정패널소자를 생산하기 위한 배선공정에서, 세척시 배선재료의 부식을 일으킴 없이, 저온에서 단기간동안 에칭 혹은 애쉬처리후 남은 레지스트 잔류물을 완벽히 제거할 레지스트 박리조성물을 제공하는 것이다. 또다른 본 발명의 목적은 레지스트 박리조성물로 박리처리한 후 반도체소자를 세척액으로 세척처리하는 단계를 포함하는 반도체소자 생산방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the conventional problems as described above, and one object is to produce a semiconductor device such as IC and LSI or a liquid crystal panel device in a wiring process, without causing corrosion of the wiring material during cleaning, for a short period of time at low temperature. It is to provide a resist stripping composition that will completely remove the resist residues left after etching or ashing. Another object of the present invention is to provide a method for producing a semiconductor device comprising the step of performing a stripping treatment with a resist stripping composition, the semiconductor device is washed with a cleaning solution.

상술한 목적 측면에서 광범위한 연구를 거듭한 결과, 본 발명자는 0.001 내지 0.5중량%의 플루오르 화합물 및 50 내지 99중량%, 특히 81 내지 99중량%의 에테르용매로 구성된 수용액이 배선재료의 부식 등을 일으킴 없이 에칭 혹은 애쉬처리후 남은 레지스트 잔류물을 쉽게 제거할 수 있고 또한 상기 수용액으로 처리한 후 세척과정에서 배선 부식작용을 일으키지 않기 때문에 레지스트 박리조성물로 적합하다는 사실을 발견하였다. 본 발명은 이러한 발견에 근거하여 달성된 것이다.As a result of extensive research in view of the above object, the inventors have found that an aqueous solution composed of 0.001 to 0.5% by weight of fluorine compound and 50 to 99% by weight of ether solvent, in particular 81 to 99% by weight, causes corrosion of the wiring material. It has been found that the resist residue remaining after etching or ashing can be easily removed, and it is suitable as a resist stripping composition because it does not cause wiring corrosion during the washing process after the aqueous solution. The present invention has been accomplished based on this finding.

따라서, 본 발명은 0.001 내지 0.5중량%의 플루오르 화합물 및 50 내지 99중량%의 에테르용매와 나머지로서 실질적으로 물을 포함하여 구성된 레지스트 박리조성물을 제공한다.Accordingly, the present invention provides a resist stripping composition comprising 0.001 to 0.5% by weight of a fluorine compound and 50 to 99% by weight of an ether solvent and substantially the remainder as water.

본 발명은 또한 (1) 무기판기판 상에 증착된 박층 전도막 위에 레지스트막을 형성하는 단계, (2) 레지스트막을 패턴화하는 단계, (3) 패턴화된 레지스트막을 마스크로 사용하여 박층 전도막을 에칭처리하는 단계, (4) 에칭처리후 남은 레지스트 잔류물을 상기 잔류물과 상기 레지스트 박리조성물의 접촉에 의해 제거하는 단계 및 (5) 그 결과로 나온 소자를 수용성 유기용매 혹은 수용성 유기용매 및 물의 혼합용매로 세척하는 단계로 구성된 반도체소자 제조방법을 제공한다.The present invention also relates to (1) forming a resist film on the thin conductive film deposited on the inorganic substrate, (2) patterning the resist film, and (3) etching the thin conductive film using the patterned resist film as a mask. Processing, (4) removing the remaining resist residue after the etching process by contacting the residue with the resist stripping composition, and (5) mixing the resulting device with a water-soluble organic solvent or water-soluble organic solvent and water. It provides a method for manufacturing a semiconductor device consisting of washing with a solvent.

본 발명은 또한 (1) 무기판기판 상에 증착된 박층 전도막 위에 레지스트막을 형성하는 단계, (2) 레지스트막을 패턴화하는 단계, (3) 패턴화된 레지스트막을 마스크로 사용하여 박층 전도막을 에칭처리하는 단계, (4) 상기 패턴화된 레지스트막을 애쉬처리하는 단계, (5) 애쉬처리후 남은 레지스트 잔류물을 상기 잔류물과 상기 레지스트 박리조성물의 접촉에 의해 제거하는 단계 및 (6) 그 결과로 나온 소자를 수용성 유기용매 혹은 수용성 유기용매 및 물의 혼합용매로 세척하는 단계로 구성된 반도체소자 제조방법을 제공한다.The present invention also relates to (1) forming a resist film on the thin conductive film deposited on the inorganic substrate, (2) patterning the resist film, and (3) etching the thin conductive film using the patterned resist film as a mask. Processing, (4) ashing the patterned resist film, (5) removing the remaining resist residue after ashing by contacting the residue with the resist stripping composition, and (6) the result. It provides a method for manufacturing a semiconductor device consisting of the step of washing the device with a water-soluble organic solvent or a mixed solvent of water-soluble organic solvent and water.

본 발명에서 사용되는 플루오르 화합물은 히드로플루오르산, 플루오르화 암모늄산, 메틸아민 히드로플로라이드, 에틸아민 히드로플로라이드, 프로필아민 히드로플로라이드, 플루오르화 테트라메틸암모늄, 플루오르화 테트라에틸암모늄, 에탄올아민 히드로플로라이드, 메틸에탄올아민 히드로플로라이드, 디메틸에탄올아민 히드로플로라이드, 히드록실아민 히드로플로라이드, 디메틸히드록실아민 히드로플로라이드, 트리에틸렌디아민 히드로플로라이드 등이다. 이들 플루오르 화합물 중에서, 플루오르화 암모늄 및 플루오르화 테트라에틸암모늄이 바람직하며 특히 플루오르화 암모늄이 더욱 바람직하다. 이들 플루오르 화합물은 단독으로 혹은 2가지 이상을 혼합하여 사용할 수 있다.Fluorine compounds used in the present invention are hydrofluoric acid, ammonium fluoride, methylamine hydrofluoride, ethylamine hydrofluoride, propylamine hydrofluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, ethanolamine hydro Fluoride, methylethanolamine hydrofluoride, dimethylethanolamine hydrofluoride, hydroxylamine hydrofluoride, dimethylhydroxyamine hydrofluoride, triethylenediamine hydrofluoride and the like. Among these fluorine compounds, ammonium fluoride and tetraethylammonium fluoride are preferred, and ammonium fluoride is more preferred. These fluorine compounds can be used individually or in mixture of 2 or more types.

플루오르 화합물은 레지스트 박리조성물 전체중량에 대해 0.001 내지 0.5중량%로 함유된다. 플루오르 화합물의 함량이 0.5중량% 이상인 경우 세척처리시 부식현상이 심해진다. 플루오르 화합물의 함량을 0.5중량% 이내로 조절하면 세척처리시의 부식발생이 현저히 감소하며 특히 물로 희석시 레지스트 박리조성물의 최대 부식수준이 크게 감소한다.The fluorine compound is contained in an amount of 0.001 to 0.5% by weight based on the total weight of the resist stripping composition. If the content of the fluorine compound is 0.5% by weight or more, the corrosion phenomenon is severe during the cleaning process. When the content of the fluorine compound is adjusted to within 0.5% by weight, the occurrence of corrosion during the washing treatment is significantly reduced, and in particular, the maximum corrosion level of the resist stripping composition is greatly reduced when diluted with water.

본 발명에서 이용되는 에테르용매는 적어도 하나의 에테르결합을 가진 화합물이다. 이러한 용매의 예로서, 에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 에틸렌글리콜 모노부틸에테르, 에틸렌글리콜 디메틸에테르, 에틸렌글리콜 디에틸에테르, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노프로필에테르, 디에틸렌글리콜 모노이소프로필에테르, 디에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노이소부틸에테르, 디에틸렌글리콜 모노벤질에테르, 디에틸렌글리콜 디메틸에테르, 디에틸렌글리콜 디에틸에테르, 트리에틸렌글리콜 모노메틸에테르, 트리에틸렌글리콜 디메틸에테르, 폴리에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 메틸에틸에테르, 트리에틸렌글리콜, 에틸렌글리콜 모노메틸에테르 아세테이트, 에틸렌글리콜 모노에틸에테르 아세테이트, 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 디메틸에테르, 프로필렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노프로필에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노프로필에테르, 디프로필렌글리콜 모노이소프로필에테르, 디프로필렌글리콜 모노부틸에테르, 디프로필렌글리콜 디메틸에테르, 디프로필렌글리콜 디프로필에테르, 디프로필렌글리콜 디이소프로필에테르, 트리프로필렌글리콜 및 트리프로필렌글리콜 모노메틸에테르 같은 글리콜에테르와 1-메톡시-2-부탄올, 2-메톡시-1-부탄올, 2-메톡시-2-메틸부탄올, 디옥산, 트리옥산, 1,1-디메톡시에탄, 테트라히드로푸란, 크라운에테르 등을 포함한다. 이들 에테르 용매 중에는 용이한 이용성 및 취급성 때문에 글리콜에테르가 바람직하다. 특히 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 디메틸에테르, 트리에틸렌글리콜 모노메틸에테르 및 디프로필렌글리콜 디메틸에테르 등이 더 바람직하다. 이들 에테르용매는 단독으로 혹은 2가지 이상을 혼합하여 사용할 수 있다.The ether solvent used in the present invention is a compound having at least one ether bond. Examples of such a solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, di Ethylene glycol monopropyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, tri Ethylene glycol monomethyl ether, triethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, diethylene glycol methylethyl ether, triethylene glycol, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol Monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether Glycol ethers such as dipropylene glycol monobutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol dipropyl ether, dipropylene glycol diisopropyl ether, tripropylene glycol and tripropylene glycol monomethyl ether, and 1-methoxy-2- Butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, dioxane, trioxane, 1,1-dimethoxyethane, tetrahydrofuran, crown ether and the like. Among these ether solvents, glycol ethers are preferred because of their ease of use and handling. In particular, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, triethylene glycol monomethyl ether, dipropylene glycol dimethyl ether and the like are more preferable. These ether solvents can be used individually or in mixture of 2 or more types.

에테르용매는 레지스트 박리조성물의 전체중량에 대하여 50 내지 99중량%, 바람직하게는 70 내지 99중량%, 더 바람직하게는 81 내지 99중량%으로 함유된다. 에테르용매의 함량이 50중량% 미만인 경우 세척시 배선재료의 부식이 효과적으로 최소화 되지 못하며 즉, 물로 희석시 레지스트 박리조성물의 최대 부식레벨을 충분히 감소시킬 수 없다.The ether solvent is contained in an amount of 50 to 99% by weight, preferably 70 to 99% by weight, more preferably 81 to 99% by weight based on the total weight of the resist stripping composition. If the content of the ether solvent is less than 50% by weight, the corrosion of the wiring material is not effectively minimized during cleaning, that is, the maximum corrosion level of the resist stripping composition cannot be sufficiently reduced when diluted with water.

본 발명의 레지스트 박리조성물 내의 수분함량은 플루오르 화합물 및 에테르용매의 함량 및 선택적으로 함유한 부식억제제 및 최대 100중량%까지 첨가되는 기타 첨가제의 첨가량에 따라 결정된다.The water content in the resist stripping composition of the present invention is determined depending on the content of the fluorine compound and the ether solvent and optionally the amount of the corrosion inhibitor and the other additives added up to 100% by weight.

본 발명에 따른 레지스트 박리조성물은 과당, 글루코스, 갈락토스 및 소르보스 등의 당류 및 소르비톨, 크실리톨 및 에리트리톨 등의 당알코올; 갈로타닌, 엘라기타닌, 카테킨 및 프로안토시안 등의 폴리페놀류; 및 수산화 테트라메틸암모늄, 탄산 테트라메틸암모늄 및 포름산 테트라메틸암모늄 같은 3차 암모늄 등을 포함하는 부식억제제를 함유할 수도 있다.The resist stripping composition according to the present invention includes sugars such as fructose, glucose, galactose and sorbose and sugar alcohols such as sorbitol, xylitol and erythritol; Polyphenols such as gallotanine, ellagitannin, catechin and proanthocyanin; And corrosion inhibitors including tertiary ammonium such as tetramethylammonium hydroxide, tetramethylammonium carbonate and tetramethylammonium formate.

본 발명에 따른 레지스트 박리조성물은 또한 카테콜, 페놀 및 피로갈롤 등의 방향족 히드록시 화합물; 포름산, 아세트산, 프로피온산, 부티르산, 이소부티르산, 옥살산, 말론산, 숙신산, 글루타르산, 말레인산, 푸마르산, 벤조산, 프탈산, 1.2.3-벤젠트리카르복실산, 글리콜산, 락트산, 말릭산, 시트르산, 아세트산무수물, 프탈산 무수물, 말레인산무수물, 숙신산무수물 및 살리실산 등의 카르복실기 함유 유기화합물; 상기의 카르복실기 함유 유기화합물로부터 유래된 카르복실기 함유 유기화합물의 유기산염 및 에탄올아민, 트리메틸아민, 디에틸아민 및 피리딘 등의 염기성물질; 및 1,2-프로판디아민 테트라메틸렌 포스핀산 및 히드록시에탄 포스핀산 같은 인산염계 킬레이트 화합물, 에틸렌디아민테트라아세트산, 디히드록시에틸글리신 및 니트릴로트라아세트산 등의 카르복실산계 킬레이트 화합물, 비피리딘, 테트라페닐포르피린 및 페난트롤린 같은 아민계 킬레이트 화합물, 및 디메틸글리옥심 및 디페닐글리옥심 등의 옥심계 킬레이트 화합물 등이 포함된다.The resist stripping composition according to the present invention may also include aromatic hydroxy compounds such as catechol, phenol and pyrogallol; Formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, benzoic acid, phthalic acid, 1.2.3-benzenetricarboxylic acid, glycolic acid, lactic acid, malic acid, citric acid, Carboxyl group-containing organic compounds such as acetic anhydride, phthalic anhydride, maleic anhydride, succinic anhydride and salicylic acid; Organic salts of the carboxyl group-containing organic compounds derived from the carboxyl group-containing organic compounds and basic substances such as ethanolamine, trimethylamine, diethylamine and pyridine; And phosphate chelate compounds such as 1,2-propanediamine tetramethylene phosphinic acid and hydroxyethane phosphinic acid, carboxylic acid chelate compounds such as ethylenediaminetetraacetic acid, dihydroxyethylglycine and nitrilotraacetic acid, bipyridine, tetra Amine chelate compounds such as phenylporphyrin and phenanthroline, and oxime chelate compounds such as dimethylglyoxime and diphenylglyoxime.

이들 부식억제제는 통상 레지스트 박리조성물의 전체중량에 대해 약 0.01 내지 30중량%의 양으로 단독 혹은 2가지 이상을 조합하여 사용할 수 있다.These corrosion inhibitors can usually be used alone or in combination of two or more in an amount of about 0.01 to 30% by weight based on the total weight of the resist stripping composition.

또한, 본 발명의 레지스트 박리조성물은 박리조성물 전체 중량의 0.001 내지 5중량%의 양으로 양이온, 음이온 혹은 무이온형 계면활성제를 함유할 수 있다.In addition, the resist stripping composition of the present invention may contain a cationic, anionic or nonionic surfactant in an amount of 0.001 to 5% by weight of the total weight of the stripping composition.

본 발명의 레지스트 박리조성물은 공지의 방법으로 제조할 수 있다. 예를들어, 플루오르 화합물, 에테르용매, 물 및 선택적 성분들을 기계적으로 혼합하여 균일한 액상으로 만든다. 성분 첨가 순서는 중요하지 않으며, 성분들은 연속으로 첨가하거나 혹은 모든 성분들을 동시에 혼합할 수도 있다. 가열처리는 균일한 액체를 수득하기 위해 필요한 경우 부가한다.The resist stripping composition of the present invention can be produced by a known method. For example, fluorine compounds, ether solvents, water and optional components are mechanically mixed into a uniform liquid phase. The order of addition of the ingredients is not critical and the ingredients may be added sequentially or all the ingredients may be mixed simultaneously. Heat treatment is added if necessary to obtain a uniform liquid.

본 발명에 따른 반도체소자를 제조하는 방법은 무기판기판 상에 증착된 박층 전도막에 레지스트막을 형성하는 단계; 레지스트막을 패턴화하는 단계; 패턴화된 레지스트막을 마스크로 사용하여 박층 전도막을 에칭처리하는 단계; 에칭처리후 남은 레지스트 잔류물을 에칭처리된 기판과 상기 레지스트 박리조성물의 접촉에 의해 제거하는 단계 및 상기 처리된 기판을 세척액으로 세척하는 단계 등을 포함한다. 이와 별도로, 패턴화된 레지스트막을 에칭처리후 애쉬처리하고 그후 남아있던 레지스트 잔류물을 레지스트 박리조성물로 제거한다. 실제의 패턴화된 레지스트막 형성, 박리 및 애쉬처리 조건은 공지의 기술과 유사하다. 박리온도, 박리시간, 사용되는 레지스트 박리조성물의 양 등의 박리조건은 제거될 레지스트 잔류물의 성질과 두께, 그 밖의 공지기술에서와 유사한 다른 요인들에 따라 쉽게 결정될 수 있다. 바람직하게, 기판은 정상온도 혹은 필요시 가열하에서, 박리에 유효한 시간 통상 0.2 내지 30분동안 레지스트 박리조성물과 접촉시킨다.A method of manufacturing a semiconductor device according to the present invention includes the steps of forming a resist film on a thin conductive film deposited on an inorganic substrate; Patterning the resist film; Etching the thin conductive film using the patterned resist film as a mask; Removing the remaining resist residue after the etching process by contacting the etched substrate with the resist stripping composition, and washing the treated substrate with a cleaning solution. Separately, the patterned resist film is ashed after etching and the remaining resist residues are then removed with a resist stripping composition. Actual patterned resist film formation, peeling and ashing conditions are similar to known techniques. The stripping conditions such as stripping temperature, stripping time, amount of resist stripping composition used and the like can be easily determined depending on the nature and thickness of the resist residue to be removed and other factors similar to those in the known art. Preferably, the substrate is brought into contact with the resist stripping composition for a time effective for stripping, usually between 0.2 and 30 minutes, at normal temperature or, if necessary, heating.

세척액으로는 메틸알코올, 에틸알코올, 이소프로판올, 디메틸아세타미드, 디메틸술폭시드(DMSO), 글리콜에테르 및 에탄올아민 등의 수용성 유기용매 혹은 상술한 수용성 유기용매와 초순수로 구성된 혼합용매를 사용할 수 있다. 또한 초순수를 단독의 세척액으로 사용하기도 한다. 본 발명의 레지스트 박리조성물을 이용하면 수용성 유기용매 단독으로 세척한 경우라도 플루오르 화합물의 증착현상 없이 충분히 잔류물을 완전제거할 수 있다.As the washing liquid, water-soluble organic solvents such as methyl alcohol, ethyl alcohol, isopropanol, dimethylacetamide, dimethyl sulfoxide (DMSO), glycol ether and ethanolamine, or a mixed solvent composed of the above-mentioned water-soluble organic solvent and ultrapure water can be used. Ultrapure water is also used as a single washing solution. If the resist stripping composition of the present invention is used, the residue can be completely removed even without washing the fluorine compound even when the organic solvent alone is washed.

본 발명의 방법에 있어서, 수용성 유기용매 혹은 이 유기용매 및 물의 혼합용매를 세척액으로 사용하면 물로 희석시 레지스트 박리조성물의 부식성이 크게 감소할 수 있다. 특히, 수용성 유기용매 단독을 세척액으로 사용하면 세척시 더이상의 부식현상이 발생하지 않는다.In the method of the present invention, the use of a water-soluble organic solvent or a mixed solvent of the organic solvent and water as the washing liquid can greatly reduce the corrosiveness of the resist stripping composition upon dilution with water. In particular, when the water-soluble organic solvent alone is used as the washing liquid, no further corrosion occurs during washing.

본 발명의 박리방법에 사용되는 무기판기판의 재료는 실리콘, 비정질 실리콘, 폴리실리콘, 산화실리콘, 질화실리콘, 알루미늄, 알루미늄합금, 티타늄, 티타늄-텅스텐, 질화티타늄, 텅스텐, 탄탈륨, 산화탄탈륨, 탄탈륨합금, 크롬, 산화크롬, 크롬합금 및 ITO (산화인듐주석) 등의 반도체나 배선재료; 갈륨-비소, 갈륨-인 및 인듐-인 등의 합성반도체; 혹은 LCD기판용 유리 등이 있다.The material of the inorganic substrate used in the peeling method of the present invention is silicon, amorphous silicon, polysilicon, silicon oxide, silicon nitride, aluminum, aluminum alloy, titanium, titanium-tungsten, titanium nitride, tungsten, tantalum oxide, tantalum oxide, tantalum Semiconductors and wiring materials such as alloys, chromium, chromium oxide, chromium alloys and ITO (indium tin oxide); Synthetic semiconductors such as gallium-arsenic, gallium-phosphorus and indium-phosphorus; Or glass for LCD substrates.

본 발명은 다음의 실시예에서 더욱 구체화된다. 그러나, 이들 실시예는 본발명의 예시를 위한 것이며 본 발명의 범위를 제한하지 않는다.The invention is further embodied in the following examples. However, these examples are intended to illustrate the invention and do not limit the scope of the invention.

[실시예 1]Example 1

도 1은 무수에칭 및 산소 플라즈마 애쉬처리 후의 Al-합금(Al-0.5%Cu) 회로기판의 부분절단 사시도이다. 산화물막(2)이 실리콘기판(1)에 형성되었다. 산화물막(2)에는 티타늄 경계층(3), 질화티타늄 경계층(4), Al-합금막 및 질화티타늄 경계층(6)을 연속으로 형성하였다. 마스크인 패턴화된 레지스트막을 통해 상기 Al-합금막을 무수에칭 처리하고 계속해서, 패턴화된 레지스트막을 산소 플라즈마 애쉬처리하여 Al-합금 배선(5)을 형성하였다. Al-합금 배선(5)의 측벽에 레지스트 잔류물(7)이 남았다.1 is a partially cutaway perspective view of an Al-alloy (Al-0.5% Cu) circuit board after anhydrous etching and oxygen plasma ash treatment. An oxide film 2 was formed on the silicon substrate 1. In the oxide film 2, a titanium boundary layer 3, a titanium nitride boundary layer 4, an Al-alloy film and a titanium nitride boundary layer 6 were formed successively. The Al-alloy film was subjected to anhydrous etching treatment through a patterned resist film serving as a mask, followed by oxygen plasma ashing of the patterned resist film to form an Al-alloy wiring 5. The resist residue 7 remained on the sidewall of the Al-alloy wiring 5.

Al-합금 회로기판을 70중량%의 디에틸렌글리콜 모노메틸에테르, 0.5중량%의 플루오르화 암모늄 및 나머지인 물로 구성된 용액에 실온에서 10분간 침지한 후 초순수로 세척한 뒤 건조시켰다. 그후, 건조된 기판을 주사전자현미경(SEM)으로 관찰하여 배선 측벽에 남은 레지스트 잔류물의 제거 상태와 Al-합금층의 표면부식 상태를 평가하였다. 그결과, 레지스트 잔류물은 완전히 제거되고 부식현상은 전혀 발견되지 않았음을 확인했다.The Al-alloy circuit board was immersed in a solution composed of 70% by weight of diethylene glycol monomethyl ether, 0.5% by weight of ammonium fluoride and the remaining water at room temperature for 10 minutes, washed with ultrapure water, and dried. Thereafter, the dried substrate was observed with a scanning electron microscope (SEM) to evaluate the removal state of the resist residue remaining on the wiring sidewall and the surface corrosion state of the Al-alloy layer. As a result, it was confirmed that the resist residue was completely removed and no corrosion phenomenon was found.

Al-합금 회로기판을 초순수로 여러 희석도로써 희석된 레지스트 박리조성물과 접촉시켰을 때의 Al-Cu 에칭율을 도 2에 나타내었다. 도 2에서, 가로좌표는 희석도 즉 "1"은 본래의 농도, "2"는 본래의 농도의 1/2 등을 표시하며 세로좌표는 Al-Cu 에칭율을 표시한다. 도 2에서 보는 바와 같이, 물로 희석된 레지스트 박리조성물의 최대 에칭율은 12Å/분 정도로 낮았음을 확인할 수 있었다.The Al-Cu etch rate is shown in FIG. 2 when the Al-alloy circuit board is contacted with the resist stripping composition diluted with different dilution with ultrapure water. In Fig. 2, the abscissa indicates the degree of dilution, that is, "1" indicates the original concentration, "2" indicates one half of the original concentration, and the ordinate indicates the Al-Cu etching rate. As shown in FIG. 2, it was confirmed that the maximum etching rate of the resist stripping composition diluted with water was as low as 12 μs / minute.

[실시예 2-10]Example 2-10

레지스트 박리조성물의 제형을 하기 표1에서 보는 바와 같이 변화시킨 것을 제외하고 실시예1과 동일한 방법에 따랐다. 그 결과는 다양한 희석도에서의 에칭율을 A, B 혹은 C로 표시하고 이때의 A 및 B는 도 2의 선(A) 및 (B)를 의미하고 C는 Al-Cu 에칭 현상을 관측할 수 없는 것을 의미하는 경우에 있어서 표 1과 같다.The same procedure as in Example 1 was followed except that the formulation of the resist stripping composition was changed as shown in Table 1 below. The results show the etch rates at various dilutions as A, B or C, where A and B represent lines A and B of FIG. 2 and C can be used to observe Al-Cu etching. Table 1 shows the case where there is no meaning.

표 1Table 1

실시예번호Example Number 에테르용매Ether solvent 플루오르 화합물Fluorine compounds 첨가제additive 물water 22 MDG 90%MDG 90% NH4F 0.2%NH 4 F 0.2% -- 9.8%9.8% 33 BDG 85%BDG 85% NH4F 0.05%NH 4 F 0.05% -- 14.95%14.95% 44 DMDG 85%DMDG 85% NH4F 0.05%NH 4 F 0.05% -- 14.95%14.95% 55 MTG 85%MTG 85% NH4F 0.2%NH 4 F 0.2% -- 14.8%14.8% 66 MDG 90%MDG 90% NH4F 0.2%NH 4 F 0.2% PDTP 0.01%PDTP 0.01% 9.79%9.79% 77 MDG 85%MDG 85% NH4F 0.2%NH 4 F 0.2% TMAF 0.1%TMAF 0.1% 14.79%14.79% 88 MDG 85%MDG 85% NH4F 0.2%NH 4 F 0.2% -- 14.7995%14.7995% EAHF 0.0005%EAHF 0.0005% 99 MDP 75%MDP 75% NH4F 0.05%NH 4 F 0.05% -- 24.95%24.95% 1010 MDG 85%MDG 85% NH4F 0.2%NH 4 F 0.2% PRA 0.1%PRA 0.1% 14.7%14.7%

MDG: 디에틸렌글리콜 모노메틸에테르MDG: diethylene glycol monomethyl ether

BDG: 디에틸렌글리콜 모노부틸에테르BDG: diethylene glycol monobutyl ether

MTG: 트리에틸렌글리콜 모노메틸에테르MTG: triethylene glycol monomethyl ether

DMDG: 디에틸렌글리콜 디메틸에테르DMDG: diethylene glycol dimethyl ether

MDP: 디프로필렌글리콜 모노메틸에테르MDP: dipropylene glycol monomethyl ether

EAHF: 에탄올아민 히드로플로라이드EAHF: Ethanolamine Hydrofluoride

PDTP: 프로판디아민테트라메틸렌 포스폰산PDTP: propanediaminetetramethylene phosphonic acid

TMAF: 포름산 테트라메틸암모늄TMAF: Tetramethylammonium Formate

PRA: 프로피온산PRA: propionic acid

표 1 (계속)Table 1 (continued)

실시예번호Example Number 제거remove Al 부식Al corrosion 희석시 Al-Cu 에칭율Al-Cu Etch Rate at Dilution 22 완전제거Complete removal 없음none BB 33 완전제거Complete removal 없음none CC 44 완전제거Complete removal 없음none CC 55 완전제거Complete removal 없음none BB 66 완전제거Complete removal 없음none BB 77 완전제거Complete removal 없음none BB 88 완전제거Complete removal 없음none BB 99 완전제거Complete removal 없음none CC 1010 완전제거Complete removal 없음none BB

[실시예 11]Example 11

애쉬처리후의 Al-합금 회로기판을 70중량%의 디에틸렌글리콜 모노메틸에테르, 0.5중량%의 플루오르화 암모늄 및 나머지인 물로 구성된 용액에 실온에서 10분간 침지한 후 이소프로판올 만으로 세척한 뒤 건조시켰다. 그후, 건조된 기판에 대하여 실시예1 에서와 유사한 방식으로 평가하였다. 그결과, 레지스트 잔류물이 완전제거된 것을 확인했다.After the ash treatment, the Al-alloy circuit board was immersed in a solution composed of 70% by weight of diethylene glycol monomethyl ether, 0.5% by weight of ammonium fluoride, and the remaining water at room temperature for 10 minutes, washed with isopropanol, and dried. Thereafter, the dried substrate was evaluated in a similar manner as in Example 1. As a result, it was confirmed that the resist residue was completely removed.

[실시예 12]Example 12

애쉬처리후의 Al-합금 회로기판을 70중량%의 디에틸렌글리콜 모노메틸에테르, 0.5중량%의 플루오르화 암모늄 및 나머지인 물로 구성된 용액에 실온에서 10분간 침지한 후 이소프로판올/물 = 4/1 의 혼합액으로 세척한 뒤 건조시켰다. 그후, 건조된 기판에 대하여 실시예1 에서와 유사한 방식으로 평가하였다. 그결과, 레지스트 잔류물이 완전제거된 것을 확인했다.After the ash treatment, the Al-alloy circuit board was immersed in a solution composed of 70% by weight of diethylene glycol monomethyl ether, 0.5% by weight of ammonium fluoride, and the remaining water at room temperature for 10 minutes, and then a mixture of isopropanol / water = 4/1 Washed with and dried. Thereafter, the dried substrate was evaluated in a similar manner as in Example 1. As a result, it was confirmed that the resist residue was completely removed.

[비교예 1]Comparative Example 1

Al-합금 회로기판을 69중량%의 디메틸포름아미드(DMF), 1중량%의 플루오르화 암모늄 및 나머지인 물로 구성된 용액에 실온에서 10분간 침지한 후 이소프로판올 만으로 세척한 뒤 건조시켰다. 그후, 건조된 기판을 주사전자현미경(SEM)으로 관찰하여 배선 측벽에 남은 레지스트 잔류물의 제거 상태와 Al-합금층의 표면부식 상태를 평가하였다. 그결과, 레지스트 잔류물이 아직 미제거 상태로 남아있고 Al-합금층의 표면이 부식되었음을 확인했다.The Al-alloy circuit board was immersed in a solution consisting of 69% by weight of dimethylformamide (DMF), 1% by weight of ammonium fluoride, and the remaining water for 10 minutes at room temperature, washed with isopropanol only and dried. Thereafter, the dried substrate was observed with a scanning electron microscope (SEM) to evaluate the removal state of the resist residue remaining on the wiring sidewall and the surface corrosion state of the Al-alloy layer. As a result, it was confirmed that the resist residue still remained unremoved and the surface of the Al-alloy layer was corroded.

물에 의해 희석된 레지스트 박리조성물의 다른 희석도에서의 Al-Cu 에칭율을 도 2에 나타내었다.The Al—Cu etch rate at different dilutions of the resist stripping composition diluted with water is shown in FIG. 2.

[비교예 2]Comparative Example 2

물에 의해 희석된 레지스트 박리조성물의 다른 희석도에서의 Al-Cu 에칭율을 도 2에 나타내었다. 본래의 용액제제는 75중량%의 디에틸렌글리콜 모노메틸에테르, 1중량%의 플루오르화 암모늄 및 나머지로서의 물로 구성되었다.The Al—Cu etch rate at different dilutions of the resist stripping composition diluted with water is shown in FIG. 2. The original solution formulation consisted of 75% by weight of diethylene glycol monomethyl ether, 1% by weight of ammonium fluoride and water as the remainder.

[비교예 3]Comparative Example 3

Al-합금 회로기판을 0.5중량%의 플루오르화 암모늄 수용액에 실온에서 10분간 침지한 후 물로 세척한 뒤 건조시켰다. 그후, 건조된 기판을 실시예 1과 동일한 방법으로 평가했다. 그결과, 레지스트 잔류물이 아직 미제거 상태로 남아있고 Al-합금층의 표면이 부식되었음을 확인했다.The Al-alloy circuit board was immersed in 0.5 wt% aqueous ammonium fluoride solution at room temperature for 10 minutes, washed with water, and dried. Thereafter, the dried substrate was evaluated in the same manner as in Example 1. As a result, it was confirmed that the resist residue still remained unremoved and the surface of the Al-alloy layer was corroded.

[실시예 13-22]Example 13-22

Al-Cu 합금 대신 Cu로 제작된 배선을 가진 회로기판을 사용하는 것을 제외하고 실시에1 내지 10에서와 동일한 방법에 따랐다. 물로 희석한 때의 레지스트 박리조성물의 각 최고 Cu 에칭율을 표 2에 나타내었다.The same method as in Examples 1 to 10 was followed except that a circuit board having wiring made of Cu was used instead of the Al-Cu alloy. Table 2 shows the highest Cu etching rates of the resist stripping composition when diluted with water.

표 2TABLE 2

실시예 번호Example number 최고 Cu 에칭율 (Å/분)Cu etching rate (max / min) 1313 〈1<One 1414 〈1<One 1515 〈1<One 1616 〈1<One 1717 〈1<One 1818 〈1<One 1919 〈1<One 2020 〈1<One 2121 〈1<One 2222 〈1<One

상술한 바와 같이, 본 발명에 따른 레지스트 박리조성물을 사용하면 에칭 혹은 애쉬처리후 남은 레지스트 잔류물을 배선재료의 부식 등 없이 쉽게 제거할 수 있으며 또한 물로 세척하는 도중 Al-함유 배선재료의 부식을 효과적으로 감소시킬 수 있다.As described above, by using the resist stripping composition according to the present invention, the resist residues remaining after etching or ashing can be easily removed without corrosion of the wiring material, and the corrosion of the Al-containing wiring material during the washing with water can be effectively prevented. Can be reduced.

Claims (12)

0.001 내지 0.5중량%의 플루오르 화합물, 50 내지 99중량%의 에테르용매 및 나머지로서 실질적으로 물을 포함하여 구성된 것을 특징으로 하는 레지스트 박리조성물.A resist stripping composition comprising 0.001 to 0.5% by weight of a fluorine compound, 50 to 99% by weight of an ether solvent and substantially the remainder of water. 제 1항에 있어서,The method of claim 1, 상기 플루오르 화합물은 히드로플루오르산, 플루오르화 암모늄 및 아민 히드로플로라이드으로 구성된 군에서 선택된 적어도 하나의 화합물인 것을 특징으로 하는 레지스트 박리조성물.The fluorine compound is a resist stripping composition, characterized in that at least one compound selected from the group consisting of hydrofluoric acid, ammonium fluoride and amine hydrofluoride. 제 1항에 있어서,The method of claim 1, 상기 플루오르 화합물은 플루오르화 암모늄인 것을 특징으로 하는 레지스트 박리조성물.Wherein said fluorine compound is ammonium fluoride. 제 1항 내지 3항 중 어느 한 항에 있어서,The method according to any one of claims 1 to 3, 상기 에테르용매는 글리콜에테르, 1-메톡시-2-부탄올, 2-메톡시-1-부탄올, 2-메톡시-2-메틸부탄올, 디옥산, 트리옥산, 1.1-디메톡시에탄, 테트라히드로퓨린 및 크라운 에테르로 구성된 군에서 선택된 적어도 하나의 화합물인 것을 특징으로 하는 레지스트 박리조성물.The ether solvent is glycol ether, 1-methoxy-2-butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, dioxane, trioxane, 1.1-dimethoxyethane, tetrahydropurine And at least one compound selected from the group consisting of crown ethers. 제 1항 내지 3항 중 어느 한 항에 있어서,The method according to any one of claims 1 to 3, 상기 에테르용매는 적어도 하나의 글리콜에테르인 것을 특징으로 하는 레지스트 박리조성물.The ether solvent is a resist stripping composition, characterized in that at least one glycol ether. 제 5항에 있어서,The method of claim 5, 상기 글리콜에테르는 에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 에틸렌글리콜 모노부틸에테르, 에틸렌글리콜 디메틸에테르, 에틸렌글리콜 디에틸에테르, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노프로필에테르, 디에틸렌글리콜 모노이소프로필에테르, 디에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노이소부틸에테르, 디에틸렌글리콜 모노벤질에테르, 디에틸렌글리콜 디메틸에테르, 디에틸렌글리콜 디에틸에테르, 트리에틸렌글리콜 모노메틸에테르, 트리에틸렌글리콜 디메틸에테르, 폴리에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 메틸에틸에테르, 트리에틸렌글리콜, 에틸렌글리콜 모노메틸에테르 아세테이트, 에틸렌글리콜 모노에틸에테르 아세테이트, 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 디메틸에테르, 프로필렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노프로필에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노프로필에테르, 디프로필렌글리콜 모노이소프로필에테르, 디프로필렌글리콜 모노부틸에테르, 디프로필렌글리콜 디메틸에테르, 디프로필렌글리콜 디프로필에테르, 디프로필렌글리콜 디이소프로필에테르, 트리프로필렌글리콜 및 트리프로필렌글리콜 모노메틸에테르로 구성된 군에서 선택되는 것을 특징으로 하는 레지스트 박리조성물.The glycol ether is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol Monopropyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol Monomethyl ether, triethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, diethylene glycol methyl ethyl ether, triethylene glycol, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol Monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether And dipropylene glycol monobutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol dipropyl ether, dipropylene glycol diisopropyl ether, tripropylene glycol and tripropylene glycol monomethyl ether. Peel composition. 제 5항에 있어서,The method of claim 5, 적어도 하나의 글리콜에테르는 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노부틸에테르, 디에틸렌글리콜 디메틸에테르, 트리에틸렌글리콜 모노메틸에테르 및 디프로필렌글리콜 디메틸에테르로 구성된 군에서 선택되는 것을 특징으로 하는 레지스트 박리조성물.At least one glycol ether is a resist stripper characterized in that it is selected from the group consisting of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, triethylene glycol monomethyl ether and dipropylene glycol dimethyl ether Composition. 제 1항 내지 7항 중 어느 한 항에 있어서,The method according to any one of claims 1 to 7, 부식억제제를 더 포함하는 것을 특징으로 하는 레지스트 박리조성물.A resist stripping composition, further comprising a corrosion inhibitor. 제 8항에 있어서,The method of claim 8, 상기 부식억제제는 방향족 히드록시 화합물, 카르복실기 함유 유기화합물, 카르복실기 함유 유기화합물의 유기염 및 킬레이트 화합물로 구성된 군에서 선택된 적어도 하나의 화합물인 것을 특징으로 하는 레지스트 박리조성물.The corrosion inhibitor is at least one compound selected from the group consisting of an aromatic hydroxy compound, a carboxyl group-containing organic compound, an organic salt of the carboxyl group-containing organic compound and a chelate compound. 제 8항에 있어서,The method of claim 8, 상기 부식억제제는 당, 당알코올, 폴리페놀 및 3차 암모늄염으로 구성된 군에서 선택된 적어도 하나의 화합물인 것을 특징으로 하는 레지스트 박리조성물.The corrosion inhibitor is a resist stripping composition, characterized in that at least one compound selected from the group consisting of sugars, sugar alcohols, polyphenols and tertiary ammonium salts. 무기판기판 상에 증착된 박층 전도막 위에 레지스트막을 형성하는 단계; 레지스트막을 패턴화하는 단계; 패턴화된 레지스트막을 마스크로 사용하여 박층 전도막을 에칭처리하는 단계; 에칭처리후 남은 레지스트 잔류물을 상기 잔류물 및 제1항 내지 10항 중 어느 한 항에 따른 레지스트 박리조성물의 접촉에 의해 제거하는 단계; 및 그 결과로 나온 기판을 수용성 유기용매 혹은 수용성 유기용매 및 물의 혼합용매로 세척하는 단계로 구성된 반도체소자 제조방법.Forming a resist film on the thin conductive film deposited on the inorganic substrate; Patterning the resist film; Etching the thin conductive film using the patterned resist film as a mask; Removing the resist residue remaining after the etching treatment by contacting the residue with the resist stripping composition according to any one of claims 1 to 10; And washing the resulting substrate with a water-soluble organic solvent or a mixed solvent of water-soluble organic solvent and water. 무기판기판 상에 증착된 박층 전도막 위에 레지스트막을 형성하는 단계; 레지스트막을 패턴화하는 단계; 패턴화된 레지스트막을 마스크로 사용하여 박층 전도막을 에칭처리하는 단계; 상기 패턴화된 레지스트막을 애쉬처리하는 단계; 애쉬처리후 남은 레지스트 잔류물을 상기 잔류물과 제1항 내지 10항 중 어느 한 항에 따른 레지스트 박리조성물의 접촉에 의해 제거하는 단계; 및 그 결과로 나온 기판을 수용성 유기용매 혹은 수용성 유기용매 및 물의 혼합용매로 세척하는 단계로 구성된 반도체소자 제조방법.Forming a resist film on the thin conductive film deposited on the inorganic substrate; Patterning the resist film; Etching the thin conductive film using the patterned resist film as a mask; Ashing the patterned resist film; Removing the remaining resist residue after ashing by contacting the residue with the resist stripping composition according to any one of claims 1 to 10; And washing the resulting substrate with a water-soluble organic solvent or a mixed solvent of water-soluble organic solvent and water. ..
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