KR20000052580A - 박막형성장치, 및 질화텅스텐 박막 제조방법 - Google Patents
박막형성장치, 및 질화텅스텐 박막 제조방법 Download PDFInfo
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- KR20000052580A KR20000052580A KR1019990062682A KR19990062682A KR20000052580A KR 20000052580 A KR20000052580 A KR 20000052580A KR 1019990062682 A KR1019990062682 A KR 1019990062682A KR 19990062682 A KR19990062682 A KR 19990062682A KR 20000052580 A KR20000052580 A KR 20000052580A
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- Prior art keywords
- gas
- thin film
- film forming
- source gas
- tungsten
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- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 46
- 239000010937 tungsten Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 14
- -1 tungsten nitride Chemical class 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims description 100
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 184
- 239000010408 film Substances 0.000 claims description 50
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 16
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000010410 dusting Methods 0.000 abstract 3
- 230000003449 preventive effect Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 9
- 239000000428 dust Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003852 thin film production method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (16)
- 진공 배기 가능한 반응조와,이 반응조 내에 배치된 방착(防着)용기와,상기 방착용기 내에 성막 대상물을 위치시키는 유지대와,상기 유지대에 대향 배치되고, 상기 방착용기 안으로 가스를 분출할 수 있도록 구성된 제 1 가스도입장치와,상기 제 1 가스도입장치와 상기 유지대의 사이에 가스를 분출할 수 있도록 구성된 제 2 가스도입장치를 갖는 박막형성장치.
- 제 1 항에 있어서, 상기 방착용기의 적어도 상기 성막 대상물 부근의 온도가 150 ℃ 이상 300 ℃ 이하의 온도를 유지할 수 있도록 구성된 박막형성장치.
- 제 1 항에 있어서, 상기 제 1 가스도입장치는 대략 동일 평면에 다수의 분출구가 형성된 샤워 노즐을 갖는 박막형성장치.
- 제 2 항에 있어서, 상기 제 1 가스도입장치는 대략 동일 평면에 다수의 분출구가 형성된 샤워 노즐을 갖는 박막형성장치.
- 제 1 항에 있어서, 상기 제 2 가스도입장치는 중공 파이프가 링 형상으로 성형되고, 이 중공 파이프에 다수의 가스 분출구가 형성된 노즐부를 갖는 박막형성장치.
- 제 2 항에 있어서, 상기 제 2 가스도입장치는 중공 파이프가 링 형상으로 성형되고, 이 중공 파이프에 다수의 가스 분출구가 형성된 노즐부를 갖는 박막형성장치.
- 제 3 항에 있어서, 상기 제 2 가스도입장치는 중공 파이프가 링 형상으로 성형되고, 이 중공 파이프에 다수의 가스 분출구가 형성된 노즐부를 갖는 박막형성장치.
- 제 4 항에 있어서, 상기 제 2 가스도입장치는 중공 파이프가 링 형상으로 성형되고, 이 중공 파이프에 다수의 가스 분출구가 형성된 노즐부를 갖는 박막형성장치.
- 화학구조 중에 질소원자를 갖는 제 1 원료가스와, 화학구조 중에 텅스텐원자를 갖는 제 2 원료가스를 반응조 안으로 분출시키고,상기 제 1 원료가스와 상기 제 2 원료가스를 반응시켜 성막 대상물 표면에 질화 텅스텐 박막을 형성하는 텅스텐 박막형성방법으로서,상기 제 1 원료가스를 분출하는 위치의 상기 성막 대상물 표면으로부터의 높이와 상기 제 2 원료가스를 분출하는 위치의 상기 성막 대상물 표면으로부터의 높이를 다르게 한 텅스텐 박막의 제조방법.
- 제 9 항에 있어서, 상기 반응조 안에 방착용기를 설치하고 상기 성막 대상물을 방착장치 안에 배치하고,상기 방착용기의 적어도 상기 성막 대상물 주위를 150 ℃ 이상 250 ℃ 이하의 온도로 승온시켜,상기 제 1, 제 2 원료가스를 상기 방착용기 안으로 분출시키는 텅스텐 박막의 제조방법.
- 제 9 항에 있어서, 상기 제 1, 제 2 원료가스 중 어느 한 쪽의 원료가스를 상기 성막 대상물 표면의 연직 상방으로부터 상기 성막 대상물 표면을 향해 분출시키는 텅스텐 박막의 제조방법.
- 제 10 항에 있어서, 상기 제 1, 제 2 원료가스 중 어느 한 쪽의 원료가스를 상기 성막 대상물 표면의 연직 상방으로부터 상기 성막 대상물 표면을 향해 분출시키는 텅스텐 박막의 제조방법.
- 제 9 항에 있어서, 상기 제 1 원료가스와 상기 제 2 원료가스 중 낮은 위치에서 분출되는 원료가스를 상기 성막 대상물 측방에서 분출시키는 텅스텐 박막의 제조방법.
- 제 10 항에 있어서, 상기 제 1 원료가스와 상기 제 2 원료가스 중 낮은 위치에서 분출되는 원료가스를 상기 성막 대상물 측방에서 분출시키는 텅스텐 박막의 제조방법.
- 제 11 항에 있어서, 상기 제 1 원료가스와 상기 제 2 원료가스 중 낮은 위치에서 분출되는 원료가스를 상기 성막 대상물 측방에서 분출시키는 텅스텐 박막의 제조방법.
- 제 12 항에 있어서, 상기 제 1 원료가스와 상기 제 2 원료가스 중 낮은 위치에서 분출되는 원료가스를 상기 성막 대상물 측방에서 분출시키는 텅스텐 박막의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11013791A JP2000212749A (ja) | 1999-01-22 | 1999-01-22 | 薄膜形成装置、及び窒化タングステン薄膜製造方法 |
JP99-13791 | 1999-01-22 |
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KR20000052580A true KR20000052580A (ko) | 2000-08-25 |
KR100630647B1 KR100630647B1 (ko) | 2006-10-02 |
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KR1019990062682A KR100630647B1 (ko) | 1999-01-22 | 1999-12-27 | 박막형성장치, 및 질화텅스텐 박막 제조방법 |
Country Status (6)
Country | Link |
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US (2) | US6312761B1 (ko) |
EP (1) | EP1024210B1 (ko) |
JP (1) | JP2000212749A (ko) |
KR (1) | KR100630647B1 (ko) |
DE (1) | DE60027935T2 (ko) |
TW (1) | TW579393B (ko) |
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US6635570B1 (en) * | 1999-09-30 | 2003-10-21 | Carl J. Galewski | PECVD and CVD processes for WNx deposition |
JP2002085950A (ja) * | 2000-09-18 | 2002-03-26 | Horiba Ltd | 流体混合装置 |
JP4429919B2 (ja) | 2002-12-27 | 2010-03-10 | 株式会社アルバック | 窒化タングステン膜の成膜方法 |
WO2005101473A1 (ja) | 2004-04-12 | 2005-10-27 | Ulvac, Inc. | バリア膜の形成方法、及び電極膜の形成方法 |
US7420227B2 (en) * | 2005-06-22 | 2008-09-02 | National Chiao Tung University | Cu-metalized compound semiconductor device |
WO2008028053A2 (en) * | 2006-08-30 | 2008-03-06 | Wayne State University | Compounds for forming metal nitrides |
US7939447B2 (en) | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
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JP4523661B1 (ja) * | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | 原子層堆積装置及び薄膜形成方法 |
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US9499905B2 (en) * | 2011-07-22 | 2016-11-22 | Applied Materials, Inc. | Methods and apparatus for the deposition of materials on a substrate |
CN109072427B (zh) * | 2016-03-25 | 2020-10-13 | 应用材料公司 | 用于高温处理的腔室衬垫 |
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JPS59131511A (ja) * | 1983-01-17 | 1984-07-28 | Zenko Hirose | アモルフアスシリコン膜の成膜方法 |
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JP2803297B2 (ja) * | 1990-03-05 | 1998-09-24 | 日本電気株式会社 | 半導体装置の製造方法 |
KR930001300A (ko) * | 1991-06-10 | 1993-01-16 | 김광호 | 화학 기상 박막 형성 방법 및 그 장치 |
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JP3590416B2 (ja) * | 1993-11-29 | 2004-11-17 | アネルバ株式会社 | 薄膜形成方法および薄膜形成装置 |
JP3360098B2 (ja) * | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
JP3699504B2 (ja) * | 1995-05-30 | 2005-09-28 | アネルバ株式会社 | 真空処理装置 |
-
1999
- 1999-01-22 JP JP11013791A patent/JP2000212749A/ja active Pending
- 1999-12-27 KR KR1019990062682A patent/KR100630647B1/ko active IP Right Grant
- 1999-12-30 TW TW088123340A patent/TW579393B/zh not_active IP Right Cessation
-
2000
- 2000-01-18 DE DE60027935T patent/DE60027935T2/de not_active Expired - Lifetime
- 2000-01-18 EP EP00100937A patent/EP1024210B1/en not_active Expired - Lifetime
- 2000-01-21 US US09/489,338 patent/US6312761B1/en not_active Expired - Lifetime
-
2001
- 2001-07-26 US US09/912,504 patent/US20020000199A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100630647B1 (ko) | 2006-10-02 |
JP2000212749A (ja) | 2000-08-02 |
US20020000199A1 (en) | 2002-01-03 |
DE60027935D1 (de) | 2006-06-22 |
EP1024210B1 (en) | 2006-05-17 |
TW579393B (en) | 2004-03-11 |
US6312761B1 (en) | 2001-11-06 |
DE60027935T2 (de) | 2007-04-26 |
EP1024210A1 (en) | 2000-08-02 |
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