KR19980015421A - Manufacturing method of depressed electrode type solar cell - Google Patents
Manufacturing method of depressed electrode type solar cell Download PDFInfo
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- KR19980015421A KR19980015421A KR1019960034724A KR19960034724A KR19980015421A KR 19980015421 A KR19980015421 A KR 19980015421A KR 1019960034724 A KR1019960034724 A KR 1019960034724A KR 19960034724 A KR19960034724 A KR 19960034724A KR 19980015421 A KR19980015421 A KR 19980015421A
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- 238000004519 manufacturing process Methods 0.000 title description 14
- 230000000994 depressogenic effect Effects 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000011248 coating agent Substances 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims abstract description 6
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 238000004528 spin coating Methods 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- -1 polyhydroxystyrene Polymers 0.000 claims 1
- 239000002345 surface coating layer Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 101100257624 Arabidopsis thaliana SPS4 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
본 발명은 (a) 세정된 반도체 기판의 전면과 후면에 산화막을 형성하는 단계; (b) 반도체 기판 후면에 표면코팅막을 형성하는 단계; (c) 반도체 기판 전면의 산화막만을 선택적으로 제거하는 단계; (d) 반도체 기판 후면의 표면코팅막을 제거하는 단계; (e) 반도체 기판 전면에 n형 불순물을 확산시켜 n+ 반도체층을 형성하는 단계; (f) 반도체 기판 전면에 산화막을 형성하는 단계; (g) 반도체 기판 전면에 홈을 형성한 다음, 이 홈내로 n형 불순물을 깊게 확산시켜 n++ 반도체층을 형성하는 단계; (h) 상기 홈내에 전도성 금속을 도금하여 전면전극을 형성하는 단계; (i) 반도체 기판 전면에 표면코팅막을 형성하는 단계; (j) 반도체 기판 후면의 산화막을 제거하는 단계; (k) 반도체 기판 후면에 보론을 함유하고 있는 실리콘 글래스를 스핀코팅하고, 베이킹한 다음, 어닐링으로 p+ 반도체층을 형성하고, 이 때 형성된 산화막을 제거하는 단계; (l) 스크린 프린팅 방법을 이용하여 반도체 기판 후면에 전도성 금속으로 후면 전극을 형성하는 단계; (m) 반도체 기판 전면의 표면코팅막을 제거하는 단계; (n) 반도체 기판 전면에 반사방지막을 형성하는 단계; (o) 에지를 분리하는 단계를 포함하는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법을 제공한다. 본 발명에 따르면, 저렴한 비용으로 반도체 기판 후면에서의 캐리어들의 재결합을 감소시킴으로써 변환효율이 향상된 태양전지를 얻을 수 있다.(A) forming an oxide film on a front surface and a rear surface of a cleaned semiconductor substrate; (b) forming a surface coating film on the back surface of the semiconductor substrate; (c) selectively removing only the oxide film on the entire surface of the semiconductor substrate; (d) removing the surface coating film on the back surface of the semiconductor substrate; (e) forming an n + semiconductor layer by diffusing n-type impurities on the entire surface of the semiconductor substrate; (f) forming an oxide film on the entire surface of the semiconductor substrate; (g) forming a groove in the entire surface of the semiconductor substrate, and then deeply diffusing the n-type impurity into the groove to form an n ++ semiconductor layer; (h) forming a front electrode by plating a conductive metal in the groove; (i) forming a surface coating film on the entire surface of the semiconductor substrate; (j) removing an oxide film on the back surface of the semiconductor substrate; (k) spin coating a silicon glass containing boron on the back surface of the semiconductor substrate, baking the silicon substrate, forming a p + semiconductor layer by annealing, and removing the oxide film formed at this time; (l) forming a rear electrode with a conductive metal on the rear surface of the semiconductor substrate using a screen printing method; (m) removing a surface coating film on the entire surface of the semiconductor substrate; (n) forming an antireflection film on the entire surface of the semiconductor substrate; and separating the edge of the photovoltaic cell according to the first aspect of the present invention. According to the present invention, it is possible to obtain a solar cell having improved conversion efficiency by reducing recombination of carriers at the back surface of the semiconductor substrate at low cost.
Description
본 발명은 함몰전극형 태양전지의 제조방법에 관한 것으로서, 상세하기로는 반도체 기판 후면에서의 캐리어들의 재결합을 감소시킴으로써 전지의 변환효율을 향상시킨 함몰전극형 태양전지를 저렴한 비용으로 제조하는 방법에 관한 것이다.The present invention relates to a method of manufacturing a depressed electrode type solar cell, and more particularly, to a method of manufacturing a depression type electrode type solar cell in which conversion efficiency of a battery is improved by reducing recombination of carriers on the back surface of a semiconductor substrate will be.
태양전지는 반도체의 광 기전력 효과를 이용한 것으로서, p형 반도체와 n형 반도체를 조합하여 만든다. p형 반도체와 n형 반도체가 접한 부분(pn 접합부)에 빛이 들어오면, 빛 에너지에 의하여 반도체 내부에서 마이너스의 전하(전자)와 플러스의 전하(정공)가 발생한다.Solar cells are based on the photovoltaic effect of semiconductors and are made by combining p-type and n-type semiconductors. When light enters a portion where the p-type semiconductor and the n-type semiconductor are in contact (pn junction), negative charges (electrons) and positive charges (holes) are generated inside the semiconductor due to the light energy.
빛에너지에 의해 발생된 전자와 정공은 내부의 전계에 의하여 각각 n형 반도체측과 p형 반도체측으로 이동하여 양쪽의 전극부에 모아진다. 이러한 두 개의 전극을 도선으로 연결하면 전류가 흐르고 외부에서 전력으로 이용할 수 있게 된다.The electrons and holes generated by the light energy move to the n-type semiconductor side and the p-type semiconductor side by the internal electric field, respectively, and are collected in both electrode portions. When these two electrodes are connected by a lead wire, current flows and can be used as an external power source.
태양전지는 전극의 형태에 따라 스크린 프린팅형 태양전지(Screen Printing Solar Cell: SPSC)와 함몰전극형 태양전지(Buried Contact Solar Cell: BCSC)로 구분할 수 있다.Solar cells can be divided into screen printing solar cells (SPSC) and buried contact solar cells (BCSC) according to the shape of the electrodes.
SPSC는 일반적으로 제조하기가 용이하지만 에너지 변환효율이 낮은 편이다. 이는 금속 전극에서의 반사, 후면 전류 흐름에서 기인된 저항 및 일반적으로 깊게 도핑되어 있는 이미터 영역에서의 캐리어들의 높은 재결합률 때문이다. 또한 상기와 같은 이유로 SPSC에서는 단락회로전류밀도와 블루우 리스폰스(blue response) 특성이 불량하다.SPSCs are generally easier to manufacture but have lower energy conversion efficiency. This is due to the reflection at the metal electrode, the resistance caused by the backside current flow, and the high recombination rate of the carriers in the generally deeply doped emitter region. In addition, short circuit current density and blue response characteristics are poor in the SPSC for the above reasons.
한편, BCSC에서는 금속 전극을 반도체 기판 전면내에 형성시키는데, 이 전지의 에너지 변환효율과 개방회로전압은 SPSC보다 높은 편이다. 이렇게 BCSC가 SPSC보다 에너지 변환효율과 개방회로전압이 높은 것은 반도체 기판 전면내로 깊게 도핑되어 있는 금속 전극이 전지의 활성영역과 떨어져 있어서 개방회로전압 및 전지 변환효율을 감소시키는 원인으로 작용하는 캐리어들의 재결합이 보다 감소되기 때문이다.On the other hand, in the BCSC, the metal electrode is formed in the entire surface of the semiconductor substrate. The energy conversion efficiency and the open circuit voltage of the battery are higher than the SPSC. The BCSC has higher energy conversion efficiency and higher open circuit voltage than the SPSC because the metal electrode, which is deeply doped into the front surface of the semiconductor substrate, is separated from the active region of the battery, .
도 1은 통상적인 BCSC의 단면구조를 나타낸 도면으로서, 이를 제조하는 방법은 다음과 같다.1 shows a cross-sectional structure of a conventional BCSC, and a method of manufacturing the same is as follows.
먼저 p형 반도체 기판 (11)에 텍스처링을 실시하여 기판 전면과 후면에 피라미드 구조를 형성한다. 상기 반도체 기판 전면상에 n+ 반도체층 (12)을 형성한 다음, 산화공정을 실시하여 반도체 기판 (11) 전면에 산화막 (13)을 형성하고 그 기판 후면에도 산화막(미도시)을 형성한다. 상기 반도체 기판 (11) 전면내로 홈을 깊게 스크라이빙한 다음, 이 홈내에 전도성 금속을 도금하여 전면전극 (16)를 형성한다. 이 때 전면전극 (16)이 형성되어 있는 홈의 하부에는 n++ 반도체층 (15)을 형성시킨다.First, the p-type semiconductor substrate 11 is textured to form a pyramid structure on the front and rear surfaces of the substrate. An oxide film 13 is formed on the entire surface of the semiconductor substrate 11 by forming an n + semiconductor layer 12 on the entire surface of the semiconductor substrate and an oxidation process is performed to form an oxide film (not shown) on the rear surface of the semiconductor substrate 11. The grooves are deeply scribed into the entire surface of the semiconductor substrate 11 and then the conductive metal is plated in the grooves to form the front electrodes 16. [ At this time, an n ++ semiconductor layer 15 is formed under the grooves in which the front electrodes 16 are formed.
반도체 기판 (11) 후면에는 알루미늄을 증착, 소결하여 p+ 반도체층 (17)을 형성하고, 그 상부에 전도성 금속을 도금하여 후면전극 (18)을 형성한다.On the back surface of the semiconductor substrate 11, aluminum is deposited and sintered to form a p + semiconductor layer 17, and a conductive metal is plated on the p + semiconductor layer 17 to form a back electrode 18. [
마지막으로, 상기 반도체 기판 전면에 반사방지막 (14)을 형성함으로써 함몰전극형 태양전지가 완성된다.Finally, the antireflection film 14 is formed on the entire surface of the semiconductor substrate to complete the recessed electrode type solar cell.
상기의 제조방법에서 알 수 있는 바와 같이, BCSC에서는 확산 불순물로서 알루미늄을 증착, 소결하여 후면전계를 형성한다. 이렇게 알루미늄을 이용하여 후면전계를 형성하는 경우, 고가의 진공증발기가 반드시 필요하다. 이로 인하여 제조비용이 상승되는 문제점이 있다.As can be seen from the above manufacturing method, in BCSC, aluminum is deposited and sintered as a diffusion impurity to form a back electric field. In the case of forming the back electric field by using aluminum in this way, an expensive vacuum evaporator is necessarily required. This causes a problem that the manufacturing cost is increased.
본 발명이 이루고자 하는 기술적 과제는 상기 문제점을 해결하여 후면전계 형성시 고가의 증착설비를 사용하지 않고서도 반도체 기판 후면에서의 캐리어들의 재결합을 효과적으로 감소시킴으로써 변환효율이 매우 향상된 함몰전극형 태양전지를 제조하는 방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a recessed-electrode type solar cell in which the conversion efficiency is greatly improved by effectively reducing the recombination of carriers on the rear surface of the semiconductor substrate without using a high- To provide a method to do so.
도 1은 통상적인 함몰전극형 태양전지의 단면구조를 개략적으로 나타낸 도면이고,1 is a schematic cross-sectional view of a typical depression electrode type solar cell,
도 2a-e는 본 발명에 따른 함몰전극형 태양전지의 제조방법을 설명하기 위한 도면들이다.FIGS. 2A to 2E are views for explaining a method of manufacturing a depression electrode type solar cell according to the present invention.
도면의 주요 부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
11, 21. p형 반도체 기판11, 21. A p-type semiconductor substrate
12, 22. n+ 반도체층12, 22. n + semiconductor layer
13, 23, 24. 산화막(SiO2)13, 23, 24. The oxide film (SiO2)
14, 30. 반사방지막(TiO2)14, 30. An antireflection film (TiO2)
15, 25. n++ 반도체층15, 25. n ++ semiconductor layer
16, 26. 전면전극16, 26. Front electrode
17, 27. p+ 반도체층17, 27. p + semiconductor layer
18, 28. 후면전극18, 28. Rear electrode
29. 표면코팅막29. Surface coating film
상기 과제를 이루기 위하여 본 발명에서는 (a) 세정된 반도체 기판의 전면과 후면에 산화막을 형성하는 단계; (b) 반도체 기판 후면에 표면코팅막을 형성하는 단계; (c) 반도체 기판 전면의 산화막만을 선택적으로 제거하는 단계; (d) 반도체 기판 후면의 표면코팅막을 제거하는 단계; (e) 반도체 기판 전면에 n형 불순물을 확산시켜 n+ 반도체층을 형성하는 단계; (f) 반도체 기판 전면에 산화막을 형성하는 단계; (g) 반도체 기판 전면에 홈을 형성한 다음, 이 홈내로 n형 불순물을 깊게 확산시켜 n++ 반도체층을 형성하는 단계; (h) 상기 홈내에 전도성 금속을 도금하여 전면전극을 형성하는 단계; (i) 반도체 기판 전면에 표면코팅막을 형성하는 단계; (j) 반도체 기판 후면의 산화막을 제거하는 단계; (k) 반도체 기판 후면에 보론을 함유하고 있는 실리콘 글래스를 스핀코팅하고, 베이킹한 다음, 어닐링으로 p+ 반도체층을 형성하고, 이 때 형성된 산화막을 제거하는 단계; (l) 스크린 프린팅 방법을 이용하여 반도체 기판 후면에 전도성 금속으로 후면 전극을 형성하는 단계;(m) 반도체 기판 전면의 표면코팅막을 제거하는 단계; (n) 반도체 기판 전면에 반사방지막을 형성하는 단계; (o) 에지를 분리하는 단계를 포함하는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법을 제공한다.According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) forming an oxide film on a front surface and a rear surface of a cleaned semiconductor substrate; (b) forming a surface coating film on the back surface of the semiconductor substrate; (c) selectively removing only the oxide film on the entire surface of the semiconductor substrate; (d) removing the surface coating film on the back surface of the semiconductor substrate; (e) forming an n + semiconductor layer by diffusing n-type impurities on the entire surface of the semiconductor substrate; (f) forming an oxide film on the entire surface of the semiconductor substrate; (g) forming a groove in the entire surface of the semiconductor substrate, and then deeply diffusing the n-type impurity into the groove to form an n ++ semiconductor layer; (h) forming a front electrode by plating a conductive metal in the groove; (i) forming a surface coating film on the entire surface of the semiconductor substrate; (j) removing an oxide film on the back surface of the semiconductor substrate; (k) spin coating a silicon glass containing boron on the back surface of the semiconductor substrate, baking the silicon substrate, forming a p + semiconductor layer by annealing, and removing the oxide film formed at this time; (1) forming a rear electrode with a conductive metal on the rear surface of the semiconductor substrate by using a screen printing method; (m) removing a surface coating film on the front surface of the semiconductor substrate; (n) forming an antireflection film on the entire surface of the semiconductor substrate; and separating the edge of the photovoltaic cell according to the first aspect of the present invention.
상기 표면코팅막의 재료로는 통상적인 반도체 소자 제조시 사용되는 표면코팅막 형성용 물질이라면 모두 사용할 수 있다. 그 중에서도 특히 노볼락(novolak) 및 폴리하이드록시스티렌과 같이 물에는 잘 녹지 않으면서 아세톤이나 톨루엔 등의 유기용제에 잘 녹는 물질이나 내에칭성 피막을 형성하는 감광성 수지인 포토레지스트로 형성하는 것이 바람직하다. 따라서, 상기 표면코팅막은 산화막 제거시 통상적으로 사용되는 식각액인 불산에 용해되지 않으므로 이 표면코팅막을 마스크로 사용하여 반도체 기판 후면의 산화막만을 선택적으로 제거할 수 있다.The material for the surface coating film may be any material for forming a surface coating film used in the conventional semiconductor device production. Among them, it is particularly preferable to form a material which does not dissolve in water such as novolak and polyhydroxystyrene but is soluble in an organic solvent such as acetone or toluene or a photoresist which is a photosensitive resin forming an etchable film Do. Therefore, since the surface coating film is not dissolved in hydrofluoric acid, which is a commonly used etchant for removing the oxide film, only the oxide film on the rear surface of the semiconductor substrate can be selectively removed using the surface coating film as a mask.
이하, 도 2a-e를 참조하여 본 발명에 따른 함몰전극형 태양전지의 제조방법을 상세히 설명하기로 한다.Hereinafter, a method of manufacturing a depression electrode type solar cell according to the present invention will be described in detail with reference to FIGS.
반도체 기판 (21)을 세정한 다음, 이 반도체 기판 (21)의 전면과 후면상에 산화막 (23) 및 (24)를 각각 형성한다. 이어서 산화막 (24)가 형성되어 있는 반도체 기판 후면상에 표면코팅막 (29)을 형성한다(도 2a). 이렇게 표면코팅막 (29)을 형성함으로써 반도체 기판 (21) 전면에 형성된 산화막 (23)만을 선택적으로 제거할 수 있다.After the semiconductor substrate 21 is cleaned, oxide films 23 and 24 are formed on the front and rear surfaces of the semiconductor substrate 21, respectively. Next, a surface coating film 29 is formed on the rear surface of the semiconductor substrate where the oxide film 24 is formed (FIG. 2A). By forming the surface coating film 29 in this manner, only the oxide film 23 formed on the entire surface of the semiconductor substrate 21 can be selectively removed.
반도체 기판 (21) 전면에 형성된 산화막 (23)을 제거하고 나서, 반도체 기판 후면의 표면코팅막 (29)을 제거한다. 이 표면코팅막 (29)은 불산과 같은 식각액에 대한 내성이 우수하며 일반적인 유기용매에 잘 용해되므로 제거하기가 매우 용이하다.The oxide film 23 formed on the front surface of the semiconductor substrate 21 is removed and then the surface coating film 29 on the rear surface of the semiconductor substrate is removed. The surface coating film 29 is excellent in resistance to an etchant such as hydrofluoric acid and is easily dissolved in a general organic solvent.
반도체 기판 (21) 전면에 n형 불순물인 인을 확산시켜 n+ 반도체층 (22)을 형성한 다음, 그 상부에 산화막 (23)을 다시 형성한다(도 2b).The n-type impurity phosphorus is diffused over the entire surface of the semiconductor substrate 21 to form the n + semiconductor layer 22, and then the oxide film 23 is formed again on the n + semiconductor layer 22 (FIG.
레이저를 이용하여 반도체 기판 (21) 전면에 홈을 스크라이빙하고 형성된 이 홈내로 n형 불순물을 깊게 확산시켜 n++반도체층 (25)을 형성한다. 이 홈위에 전도성 금속을 도금하여 전면전극 (26)을 형성한다. 여기에서 도금방법으로는 선택적 도금이 가능한 무전해도금방법을 사용하는 것이 바람직하다.The n + type semiconductor layer 25 is formed by deeply diffusing the n-type impurity into the groove formed by scribing the groove on the entire surface of the semiconductor substrate 21 by using a laser. And a front electrode 26 is formed by plating a conductive metal on the groove. As the plating method, it is preferable to use an electroless plating method capable of selective plating.
전면전극 (26)이 형성된 상기 반도체 기판 (21) 전면에 표면코팅막 (29)을 형성한다. 그리고 나서 반도체 기판 후면의 산화막 (24)을 제거한다(도 2c). 그 후, 반도체 기판 (21) 후면에 보론을 함유하고 있는 실리콘 글래스를 스핀코팅하고, 120 내지 170℃에서 15∼20분동안 베이킹한다. 여기에서 보론과 실리콘 글래스의 중량비는 10:90 내지 20 :80이 바람직하며, 15:85가 가장 바람직하다. 이어서 급속 열적 어닐링기(Rapid Thermal Annealer: RTA)를 이용한 어닐링으로 p+ 반도체층 (27)을 형성한다. 그리고 이러한 후면전계 형성시 생성된 산화막(미도시)을 제거해낸다.A surface coating film 29 is formed on the entire surface of the semiconductor substrate 21 on which the front electrode 26 is formed. Then, the oxide film 24 on the back surface of the semiconductor substrate is removed (FIG. 2C). Thereafter, silicon glass containing boron is spin-coated on the back surface of the semiconductor substrate 21 and baked at 120 to 170 DEG C for 15 to 20 minutes. Here, the weight ratio of boron to silicon glass is preferably 10:90 to 20:80, and most preferably 15:85. Then, the p + semiconductor layer 27 is formed by annealing using a Rapid Thermal Annealer (RTA). Then, the oxide film (not shown) generated during the formation of the rear electric field is removed.
산화막이 제거된 반도체 기판 (21) 후면에 스크린 인쇄방법을 사용하여 전극을 인쇄한 다음, 소결하여 후면전극 (28)을 형성한다(도 2d). 이어서 반도체 기판 전면의 표면코팅막 (29)을 제거한 다음, 반도체 기판 (21) 전면에 반사방지물질을 분무하여 반사방지막 (30)을 형성한다(도 2e).An electrode is printed on the rear surface of the semiconductor substrate 21 from which the oxide film has been removed using a screen printing method, and then sintered to form the rear electrode 28 (FIG. Next, the surface coating film 29 on the entire surface of the semiconductor substrate is removed, and an antireflection material is sprayed on the entire surface of the semiconductor substrate 21 to form the antireflection film 30 (FIG. 2E).
마지막으로 전지 제조공정중 외부의 불순물로 인하여 pn접합이 손상되거나 전지가 단락되는 것을 방지하기 위하여 에지(edge)를 분리해냄으로써 도 1에 도시된 바와 같은 본 발명에 따른 함몰전극형 태양전지가 완성된다.Finally, in order to prevent damage to the pn junction due to external impurities in the battery manufacturing process or to prevent short-circuiting of the battery, the edge is separated to obtain a depressed electrode type solar cell according to the present invention as shown in FIG. do.
본 발명에 의하면, 종래의 함몰전극형 태양전지의 제조방법과는 달리 후면전계 형성시 고가의 증착설비를 사용하지 않고 단지 스핀코터와 RTA를 사용한다. 따라서 종래보다 제조비용이 절감된다.According to the present invention, unlike a conventional method of manufacturing a depression electrode type solar cell, a spin coater and RTA are used only in forming a rear electric field without using expensive deposition equipment. Therefore, the manufacturing cost is reduced compared with the prior art.
Claims (6)
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