KR102672961B1 - 다이 본딩 시트, 및 필름형 접착제가 형성된 반도체 칩의 제조 방법 - Google Patents

다이 본딩 시트, 및 필름형 접착제가 형성된 반도체 칩의 제조 방법 Download PDF

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Publication number
KR102672961B1
KR102672961B1 KR1020217028310A KR20217028310A KR102672961B1 KR 102672961 B1 KR102672961 B1 KR 102672961B1 KR 1020217028310 A KR1020217028310 A KR 1020217028310A KR 20217028310 A KR20217028310 A KR 20217028310A KR 102672961 B1 KR102672961 B1 KR 102672961B1
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KR
South Korea
Prior art keywords
adhesive
film
die bonding
layer
bonding sheet
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KR1020217028310A
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English (en)
Korean (ko)
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KR20210137020A (ko
Inventor
와타루 이와야
요스케 사토
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린텍 가부시키가이샤
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Publication of KR20210137020A publication Critical patent/KR20210137020A/ko
Application granted granted Critical
Publication of KR102672961B1 publication Critical patent/KR102672961B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020217028310A 2019-03-07 2020-03-06 다이 본딩 시트, 및 필름형 접착제가 형성된 반도체 칩의 제조 방법 KR102672961B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-041885 2019-03-07
JP2019041885 2019-03-07
PCT/JP2020/009596 WO2020179899A1 (ja) 2019-03-07 2020-03-06 ダイボンディングシート、及びフィルム状接着剤付き半導体チップの製造方法

Publications (2)

Publication Number Publication Date
KR20210137020A KR20210137020A (ko) 2021-11-17
KR102672961B1 true KR102672961B1 (ko) 2024-06-05

Family

ID=72337852

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217028310A KR102672961B1 (ko) 2019-03-07 2020-03-06 다이 본딩 시트, 및 필름형 접착제가 형성된 반도체 칩의 제조 방법

Country Status (5)

Country Link
JP (2) JP7141516B2 (ja)
KR (1) KR102672961B1 (ja)
CN (1) CN113508167B (ja)
TW (1) TWI826660B (ja)
WO (1) WO2020179899A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016089138A (ja) 2014-11-11 2016-05-23 ダイヤプラスフィルム株式会社 半導体製造工程用粘着フィルムに使用する基材フィルム
JP5946650B2 (ja) 2012-02-21 2016-07-06 積水化学工業株式会社 ダイシング−ダイボンディングテープ及び粘接着剤層付き半導体チップの製造方法
WO2018083982A1 (ja) 2016-11-01 2018-05-11 リンテック株式会社 ダイシングダイボンディングシート、及び半導体チップの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946650B2 (ja) * 1976-05-18 1984-11-14 株式会社サンノ− 家畜ふん尿固液分離装置
JPS5946650U (ja) 1982-09-20 1984-03-28 株式会社ダイフク パレツトフイ−ダ−
KR100894207B1 (ko) * 2000-03-31 2009-04-22 히다치 가세고교 가부시끼가이샤 접착제 조성물, 그의 제조 방법, 이것을 사용한 접착 필름,반도체 탑재용 기판 및 반도체 장치
JP2010263041A (ja) * 2009-05-01 2010-11-18 Nitto Denko Corp ダイアタッチフィルム付きダイシングテープおよび半導体装置の製造方法
JP6012602B2 (ja) * 2011-07-25 2016-10-25 リンテック株式会社 半導体加工シート用基材フィルム、半導体加工シート及び半導体装置の製造方法
JP2013197390A (ja) * 2012-03-21 2013-09-30 Lintec Corp ダイシングシートおよび半導体チップの製造方法
JP6077922B2 (ja) * 2012-12-10 2017-02-08 日東電工株式会社 ダイシングテープ一体型接着シート、ダイシングテープ一体型接着シートを用いた半導体装置の製造方法、及び、半導体装置
JP6391329B2 (ja) * 2014-07-03 2018-09-19 リンテック株式会社 保護膜形成用複合シート
CN108701598B (zh) * 2016-02-29 2022-10-28 琳得科株式会社 半导体加工片用基材膜以及半导体加工片
KR102387943B1 (ko) * 2017-05-17 2022-04-18 린텍 가부시키가이샤 반도체 장치 및 이의 제조 방법
JP7041476B2 (ja) * 2017-07-04 2022-03-24 日東電工株式会社 ダイシングテープおよびダイシングダイボンドフィルム
JP2018115331A (ja) * 2018-03-20 2018-07-26 リンテック株式会社 粘着テープおよび半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5946650B2 (ja) 2012-02-21 2016-07-06 積水化学工業株式会社 ダイシング−ダイボンディングテープ及び粘接着剤層付き半導体チップの製造方法
JP2016089138A (ja) 2014-11-11 2016-05-23 ダイヤプラスフィルム株式会社 半導体製造工程用粘着フィルムに使用する基材フィルム
WO2018083982A1 (ja) 2016-11-01 2018-05-11 リンテック株式会社 ダイシングダイボンディングシート、及び半導体チップの製造方法

Also Published As

Publication number Publication date
CN113508167A (zh) 2021-10-15
JPWO2020179899A1 (ja) 2020-09-10
KR20210137020A (ko) 2021-11-17
TWI826660B (zh) 2023-12-21
JP2022125112A (ja) 2022-08-26
JP7141516B2 (ja) 2022-09-22
JP7141567B2 (ja) 2022-09-22
CN113508167B (zh) 2023-08-18
TW202045647A (zh) 2020-12-16
WO2020179899A1 (ja) 2020-09-10

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