KR102638753B1 - 표시 장치 제조용 포토마스크, 및 표시 장치의 제조 방법 - Google Patents

표시 장치 제조용 포토마스크, 및 표시 장치의 제조 방법 Download PDF

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Publication number: KR102638753B1
Authority: KR; South Korea
Prior art keywords: light; phase shift; photomask; exposure; line
Prior art date: 2017-03-24

Application number

KR1020180030899A

Other languages

English (en)

Korean (ko)

Other versions

KR20180108459A (ko

Inventor

노부히사 이마시키

Original Assignee

호야 가부시키가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-24

Filing date

2018-03-16

Publication date

2024-02-21

2018-03-16 Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤

2018-10-04 Publication of KR20180108459A publication Critical patent/KR20180108459A/ko

2024-02-21 Application granted granted Critical

2024-02-21 Publication of KR102638753B1 publication Critical patent/KR102638753B1/ko

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 43
238000000034 method Methods 0.000 title claims description 8
230000010363 phase shift Effects 0.000 claims abstract description 105
239000000758 substrate Substances 0.000 claims abstract description 26
230000003287 optical effect Effects 0.000 claims description 15
238000002834 transmittance Methods 0.000 claims description 11
230000000903 blocking effect Effects 0.000 claims description 3
239000010408 film Substances 0.000 description 46
238000010586 diagram Methods 0.000 description 27
239000000463 material Substances 0.000 description 11
230000000694 effects Effects 0.000 description 10
238000004088 simulation Methods 0.000 description 6
150000001875 compounds Chemical class 0.000 description 5
238000005286 illumination Methods 0.000 description 4
150000002736 metal compounds Chemical class 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
229910021332 silicide Inorganic materials 0.000 description 4
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 3
238000005530 etching Methods 0.000 description 3
239000010410 layer Substances 0.000 description 3
229910052750 molybdenum Inorganic materials 0.000 description 3
150000004767 nitrides Chemical class 0.000 description 3
229910052715 tantalum Inorganic materials 0.000 description 3
239000002253 acid Substances 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
239000004973 liquid crystal related substance Substances 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
238000013041 optical simulation Methods 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
238000001039 wet etching Methods 0.000 description 2
230000007423 decrease Effects 0.000 description 1
238000005401 electroluminescence Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
229910052735 hafnium Inorganic materials 0.000 description 1
230000010354 integration Effects 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
238000001459 lithography Methods 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000002356 single layer Substances 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
229910052726 zirconium Inorganic materials 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

KR1020180030899A 2017-03-24 2018-03-16 표시 장치 제조용 포토마스크, 및 표시 장치의 제조 방법 KR102638753B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017059685		2017-03-24
JPJP-P-2017-059685		2017-03-24

Publications (2)

Publication Number	Publication Date
KR20180108459A KR20180108459A (ko)	2018-10-04
KR102638753B1 true KR102638753B1 (ko)	2024-02-21

Family

ID=63706266

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020180030899A KR102638753B1 (ko)	2017-03-24	2018-03-16	표시 장치 제조용 포토마스크, 및 표시 장치의 제조 방법

Country Status (4)

Country	Link
JP (1)	JP7080070B2 (ja)
KR (1)	KR102638753B1 (ja)
CN (1)	CN108628089B (ja)
TW (2)	TWI758694B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7383490B2 (ja)	2020-01-07	2023-11-20	株式会社エスケーエレクトロニクス	フォトマスク
KR102360105B1 (ko) *	2020-12-29	2022-02-14	주식회사 포커스비전	영상 블러를 이용한 3차원 영상 생성방법

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JP5605917B2 (ja) *	2011-12-27	2014-10-15	Ｈｏｙａ株式会社	フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6139826B2 (ja) *	2012-05-02	2017-05-31	Hoya株式会社	フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6093117B2 (ja) *	2012-06-01	2017-03-08	Hoya株式会社	フォトマスク、フォトマスクの製造方法及びパターンの転写方法
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2018
- 2018-02-19 JP JP2018026667A patent/JP7080070B2/ja active Active
- 2018-02-23 TW TW109108345A patent/TWI758694B/zh active
- 2018-02-23 TW TW107106075A patent/TWI691783B/zh active
- 2018-03-14 CN CN201810208726.2A patent/CN108628089B/zh active Active
- 2018-03-16 KR KR1020180030899A patent/KR102638753B1/ko active IP Right Grant

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JP2001296647A (ja) *	2000-02-10	2001-10-26	Nec Corp	フォトマスクおよびこれを用いた露光方法
JP2017010059A (ja) *	2016-10-05	2017-01-12	Hoya株式会社	フォトマスク、フォトマスクの製造方法及びパターンの転写方法

Also Published As

Publication number	Publication date
TWI691783B (zh)	2020-04-21
CN108628089B (zh)	2023-09-12
JP2018163335A (ja)	2018-10-18
KR20180108459A (ko)	2018-10-04
JP7080070B2 (ja)	2022-06-03
TW201837553A (zh)	2018-10-16
CN108628089A (zh)	2018-10-09
TW202024776A (zh)	2020-07-01
TWI758694B (zh)	2022-03-21

Legal Events

Date	Code	Title
2021-01-26	A201	Request for examination
2021-01-26	AMND	Amendment
2023-03-24	E902	Notification of reason for refusal
2023-06-26	AMND	Amendment
2023-08-03	E601	Decision to refuse application
2023-11-03	AMND	Amendment
2023-11-14	E90F	Notification of reason for final refusal
2024-01-10	AMND	Amendment
2024-01-30	X701	Decision to grant (after re-examination)

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