KR102632427B1 - 발광 디바이스, 통합 발광 디바이스 및 발광 모듈 - Google Patents

발광 디바이스, 통합 발광 디바이스 및 발광 모듈 Download PDF

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Publication number: KR102632427B1
Authority: KR; South Korea
Prior art keywords: light; emitting device; light emitting; encapsulant; wavelength
Prior art date: 2015-10-08

Application number

KR1020160129813A

Other languages

English (en)

Korean (ko)

Other versions

KR20170044032A (ko

Inventor

모토카즈 야마다

유이치 야마다

Original Assignee

니치아 카가쿠 고교 가부시키가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-10-08

Filing date

2016-10-07

Publication date

2024-01-31

2016-10-07 Application filed by 니치아 카가쿠 고교 가부시키가이샤 filed Critical 니치아 카가쿠 고교 가부시키가이샤

2017-04-24 Publication of KR20170044032A publication Critical patent/KR20170044032A/ko

2024-01-31 Application granted granted Critical

2024-01-31 Publication of KR102632427B1 publication Critical patent/KR102632427B1/ko

Links

239000008393 encapsulating agent Substances 0.000 claims abstract description 60
238000002834 transmittance Methods 0.000 claims description 15
238000006243 chemical reaction Methods 0.000 claims description 9
238000000605 extraction Methods 0.000 claims description 9
238000009826 distribution Methods 0.000 description 50
239000000463 material Substances 0.000 description 44
229910045601 alloy Inorganic materials 0.000 description 13
239000000956 alloy Substances 0.000 description 13
238000009792 diffusion process Methods 0.000 description 12
230000003287 optical effect Effects 0.000 description 12
239000004065 semiconductor Substances 0.000 description 11
229910052751 metal Inorganic materials 0.000 description 10
239000002184 metal Substances 0.000 description 10
229920005989 resin Polymers 0.000 description 10
239000011347 resin Substances 0.000 description 10
238000010586 diagram Methods 0.000 description 9
238000000034 method Methods 0.000 description 9
239000000919 ceramic Substances 0.000 description 7
238000005304 joining Methods 0.000 description 5
150000004767 nitrides Chemical class 0.000 description 5
239000000758 substrate Substances 0.000 description 5
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
240000003380 Passiflora rubra Species 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 4
239000003822 epoxy resin Substances 0.000 description 4
239000000945 filler Substances 0.000 description 4
239000010931 gold Substances 0.000 description 4
239000007769 metal material Substances 0.000 description 4
229920000647 polyepoxide Polymers 0.000 description 4
229920002050 silicone resin Polymers 0.000 description 4
229910052709 silver Inorganic materials 0.000 description 4
239000004332 silver Substances 0.000 description 4
239000004593 Epoxy Substances 0.000 description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
229910004298 SiO 2 Inorganic materials 0.000 description 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
239000010949 copper Substances 0.000 description 3
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
229910052737 gold Inorganic materials 0.000 description 3
230000031700 light absorption Effects 0.000 description 3
239000004973 liquid crystal related substance Substances 0.000 description 3
239000000203 mixture Substances 0.000 description 3
239000002245 particle Substances 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910000881 Cu alloy Inorganic materials 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
239000004954 Polyphthalamide Substances 0.000 description 2
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
229910010413 TiO 2 Inorganic materials 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
239000003086 colorant Substances 0.000 description 2
230000000052 comparative effect Effects 0.000 description 2
230000007423 decrease Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
238000001746 injection moulding Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
230000008018 melting Effects 0.000 description 2
238000002844 melting Methods 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
238000007747 plating Methods 0.000 description 2
-1 polyethylene terephthalate Polymers 0.000 description 2
229920000139 polyethylene terephthalate Polymers 0.000 description 2
239000005020 polyethylene terephthalate Substances 0.000 description 2
229920001721 polyimide Polymers 0.000 description 2
239000009719 polyimide resin Substances 0.000 description 2
229920006375 polyphtalamide Polymers 0.000 description 2
229920001296 polysiloxane Polymers 0.000 description 2
229910000679 solder Inorganic materials 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
239000010937 tungsten Substances 0.000 description 2
238000007666 vacuum forming Methods 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
229920000178 Acrylic resin Polymers 0.000 description 1
239000004925 Acrylic resin Substances 0.000 description 1
229910001316 Ag alloy Inorganic materials 0.000 description 1
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
229910017401 Au—Ge Inorganic materials 0.000 description 1
229910015365 Au—Si Inorganic materials 0.000 description 1
229910015363 Au—Sn Inorganic materials 0.000 description 1
229910000906 Bronze Inorganic materials 0.000 description 1
229910017770 Cu—Ag Inorganic materials 0.000 description 1
JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
239000004743 Polypropylene Substances 0.000 description 1
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
238000005452 bending Methods 0.000 description 1
239000010974 bronze Substances 0.000 description 1
229910052576 carbides based ceramic Inorganic materials 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
238000000748 compression moulding Methods 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
239000013078 crystal Substances 0.000 description 1
KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
229910052839 forsterite Inorganic materials 0.000 description 1
239000003365 glass fiber Substances 0.000 description 1
239000002241 glass-ceramic Substances 0.000 description 1
239000011256 inorganic filler Substances 0.000 description 1
229910003475 inorganic filler Inorganic materials 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
238000004020 luminiscence type Methods 0.000 description 1
HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
229910052863 mullite Inorganic materials 0.000 description 1
239000011368 organic material Substances 0.000 description 1
AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
229920001568 phenolic resin Polymers 0.000 description 1
239000005011 phenolic resin Substances 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
229920005668 polycarbonate resin Polymers 0.000 description 1
239000004431 polycarbonate resin Substances 0.000 description 1
229920001155 polypropylene Polymers 0.000 description 1
238000004080 punching Methods 0.000 description 1
239000002096 quantum dot Substances 0.000 description 1
229910052703 rhodium Inorganic materials 0.000 description 1
239000010948 rhodium Substances 0.000 description 1
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
238000005245 sintering Methods 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000011343 solid material Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Device Packages (AREA)
Planar Illumination Modules (AREA)
Led Devices (AREA)

KR1020160129813A 2015-10-08 2016-10-07 발광 디바이스, 통합 발광 디바이스 및 발광 모듈 KR102632427B1 (ko)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JPJP-P-2015-200445		2015-10-08
JP2015200445		2015-10-08
JPJP-P-2016-197968		2016-10-06
JP2016197968A JP6506899B2 (ja)	2015-10-08	2016-10-06	発光装置、集積型発光装置および発光モジュール

Publications (2)

Publication Number	Publication Date
KR20170044032A KR20170044032A (ko)	2017-04-24
KR102632427B1 true KR102632427B1 (ko)	2024-01-31

Family

ID=58538425

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020160129813A KR102632427B1 (ko)	2015-10-08	2016-10-07	발광 디바이스, 통합 발광 디바이스 및 발광 모듈

Country Status (8)

Country	Link
JP (3)	JP6506899B2 (pt)
KR (1)	KR102632427B1 (pt)
CN (2)	CN106571421B (pt)
AU (1)	AU2016238924B2 (pt)
BR (1)	BR112018006931B1 (pt)
CA (1)	CA2999401A1 (pt)
RU (1)	RU2717381C2 (pt)
TW (2)	TWI799754B (pt)

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CN116884966A (zh) *	2017-07-21	2023-10-13	日亚化学工业株式会社	背光装置以及光源
JP7082273B2 (ja) *	2017-07-21	2022-06-08	日亜化学工業株式会社	発光装置、集積型発光装置および発光モジュール
CN109390327B (zh) *	2017-08-02	2020-10-30	吴裕朝	发光装置、应用其的背光模组、光源模组及其制备方法
JP7522529B2 (ja) *	2017-08-31	2024-07-25	日亜化学工業株式会社	発光装置
KR102631105B1 (ko) *	2017-08-31	2024-01-30	니치아 카가쿠 고교 가부시키가이샤	발광 장치
JP7082272B2 (ja) *	2017-09-27	2022-06-08	日亜化学工業株式会社	発光装置
JP7174216B2 (ja) *	2017-10-23	2022-11-17	日亜化学工業株式会社	発光モジュールおよび集積型発光モジュール
US10873014B2 (en) *	2017-10-26	2020-12-22	Epistar Corporation	Light-emitting device
JP6870592B2 (ja)	2017-11-24	2021-05-12	豊田合成株式会社	発光装置
JP7177331B2 (ja)	2018-06-29	2022-11-24	日亜化学工業株式会社	発光装置
JP7180552B2 (ja) *	2019-06-21	2022-11-30	豊田合成株式会社	発光装置の製造管理方法
JP7226131B2 (ja) *	2019-06-25	2023-02-21	豊田合成株式会社	発光装置及びその製造方法
JP2021009806A (ja) *	2019-07-01	2021-01-28	大日本印刷株式会社	バックライトモジュール、および表示装置
CN112485803A (zh) *	2019-08-21	2021-03-12	Oppo广东移动通信有限公司	激光发射装置及制作方法、飞行时间测量装置
JP7508278B2 (ja)	2020-06-04	2024-07-01	キヤノン株式会社	露光装置、露光方法、及び物品の製造方法
US20230378403A1 (en) *	2020-10-20	2023-11-23	Dai Nippon Printing Co., Ltd.	Surface-emitting device, display device, sealing member sheet for surface-emitting device, and method for producing surface-emitting device
CN116779744A (zh) *	2023-06-30	2023-09-19	淮安澳洋顺昌光电技术有限公司	一种芯片级led封装元件

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JP2007173849A (ja) *	2005-12-19	2007-07-05	Philips Lumileds Lightng Co Llc	発光デバイス
JP2008004948A (ja)	2006-06-09	2008-01-10	Philips Lumileds Lightng Co Llc	低プロファイルの側面放射ｌｅｄ
JP2012503782A (ja) *	2008-09-24	2012-02-09	フィリップスルミレッズライティングカンパニーリミテッドライアビリティカンパニー	背面表面へ光学的に結合されるｌｅｄを有する薄型エッジバックライト
JP2013077798A (ja)	2011-09-14	2013-04-25	Toyoda Gosei Co Ltd	ガラス封止ｌｅｄランプ及びその製造方法
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RU2018112372A3 (pt)	2019-12-05
TWI799754B (zh)	2023-04-21
RU2717381C2 (ru)	2020-03-23
CA2999401A1 (en)	2017-04-13
CN113437202A (zh)	2021-09-24
BR112018006931B1 (pt)	2022-11-29
AU2016238924B2 (en)	2021-06-10
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CN106571421B (zh)	2021-07-09
JP2017073549A (ja)	2017-04-13
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KR20170044032A (ko)	2017-04-24
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JP7252483B2 (ja)	2023-04-05
RU2018112372A (ru)	2019-10-07
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